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  • About
  • The Global ETD Search service is a free service for researchers to find electronic theses and dissertations. This service is provided by the Networked Digital Library of Theses and Dissertations.
    Our metadata is collected from universities around the world. If you manage a university/consortium/country archive and want to be added, details can be found on the NDLTD website.
211

Ultra-Thin Ag Films on the Sn/Si(111)-√3×√3 Surface Studied by STM / Ultratunna Ag-filmer på Sn/Si(111)-√3×√3 ytan studerat med STM

Lavén, Rasmus January 2018 (has links)
The growth of atomically flat silver films on Si(111) usually requires a two-step growth, including deposition at low temperature (≈100 K) followed by slowly annealing to room temperature. In addition, flat silver films are usually only obtained on Si(111) for film thicknesses larger than the critical thickness of 6 monolayer. In this work, Ag thin film formation at ambient temperature on Sn/Si(111)-√3×√3 has been investigated experimentally using a combination of scanning tunneling microscopy, scanning tunneling spectroscopy and low-energy electron diffraction. The first buffer layer, probably consisting of both Ag and Sn, formed a partially ordered structure consisting of atomic rows which mainly followed the high-symmetry directions of the underlying Si(111) lattice. From 3 ML coverage, an atomically flat Ag film was formed. Low-energy electron diffraction confirmed that the films grew in the [111]-direction. This shows that atomically flat Ag films as thin as 3 ML can be grown on Sn/Si(111)-√3×√3 by conventional deposition at room temperature. The electronic structures of the films were studied for a range of different coverages by scanning tunneling spectroscopy. The normalized tunneling conductance showed quantum well states in the occupied electronic states, which moved towards the Fermi energy with increasing film thicknesses.
212

Moléculas orgânicas sobre superfícies metálicas : uma investigação teórica / Organic molecules on metalic surfaces : a thoretical investigation

Brunetto, Gustavo, 1983- 07 August 2009 (has links)
Orientador: Douglas Soares Galvão / Dissertação (mestrado) - Universidade Estadual de Campinas, Instituto de Fisica "Gleb Wataghin" / Made available in DSpace on 2018-08-14T05:39:30Z (GMT). No. of bitstreams: 1 Brunetto_Gustavo_M.pdf: 28278571 bytes, checksum: 7cba216c6b133f4a224e2155791937f4 (MD5) Previous issue date: 2009 / Resumo: Recentemente, a primeira nanoroda molecular foi caracterizada a partir de experimentos com o microscópio de tunelamento eletrônico (STM). Foi demonstrado que a molécula de hidrocarboneto (C44H24) especificamente desenhada poderia rolar sobre a superfície de cobre ao longo da direção [110] da superfície. A molécula consiste em duas rodas baseadas no grupo triptycene as quais são conectadas por um eixo. Nós reportamos um estudo teórico da simulação desse processo. Usamos métodos ab initio (DMol 3) e de dinâmica molecular clássica (UFF). Consideramos diferentes orientações cristalográficas ([111], [110], e [100]) para a superfície de cobre, a fim de determinar como estas diferentes orientações afetam o processo de rolamento molecular. Nossos resultados estão em boa acordância com os dados experimentais disponíveis. As simulações mostraram que o mecanismo de rolamento só é possível para a direção [110]. Para as outras direções ([111] e [100]) a superfície é muito suave e não pode prover o torque necessário para o processo de rolamento. Para estes casos a molécula somente desliza (movimento de translação), sem rolar quando interage com a ponta do microscópio. Para a direção [110] a separação espacial entre as colunas de cobre é suficiente para travar a molécula e criar um torque. Além da superfície correta, a posição relativa da molécula sobre a superfície é muito importante. A molécula deve estar com seu eixo principal paralelo à direção [110]. Este efeito de comensurabilidade, entre a molécula e a superfície, é similar a difusão seletiva na superfície recentemente observada para outras classes de moléculas orgânicas. Os perfis experimentais observados para o empuramento, puxamento e rolamento também podem ser explicados em termos destas características geométricas entre a molécula e as diferentes direções cristalográficas do cobre / Abstract: Recently, the first molecular nanowheel was characterized with scanning tunneling micro-scope experiments. It was demonstrated that a specifically designed hydrocarbon molecule (C44H24) could roll over a copper substrate along the [110] direction of a surface. The molecule consists in two wheels based on two triptycene groups which are connected by an axle. We report a theoretical study of the simulations of this process. We used ab initio (DMol 3) and classical molecular dynamics methods (UFF). We have considered different crystallographic orientations ([111], [110], and [100]) for the copper surface, in order to determine how these different orientations affect the molecular rolling processes. Our results are in good agreement with the available experimentally data. The simulations showed that the rolling mechanism is only possible for the [110] direction. For the others directions ([111] and [100]) the surfaces are too smooth and cannot provide the necessary torque to the rolling process. For these cases the molecule just slides (translational movement), without rolling when interact with the STM tip. For the [110] direction the spatial separation among rows of copper atoms is enough to trap the molecule and to create a torque. Besides the correct surface the relative position of the molecule on the surface is very important. The molecule should be with its main axis in the parallel direction to [110]. This commensurability effect, between the molecule and the surface, is similar to the surface selective diffusion recently observed for other classes of organic molecules. The experimental observed pushing, pulling, and rolling profiles can also be explained in terms of these geometrical features between the molecule and the different Cu crystallographic directions / Mestrado / Mestre em Física
213

Construção de um sistema de epitaxia por feixe molecular / Building of a molecular beam epitaxy system

Fiorentini, Giovanni Alessandro 29 May 2007 (has links)
Orientadores: Marco Antonio Robert Alves, Gilberto Medeiros Ribeiro / Dissertação (mestrado) - Universidade Estadual de Campinas, Faculdade de Engenharia Eletrica e de Computação / Made available in DSpace on 2018-08-11T09:04:08Z (GMT). No. of bitstreams: 1 Fiorentini_GiovanniAlessandro_M.pdf: 8940577 bytes, checksum: aa3711a9b5e0821a30c942ef0760c8f7 (MD5) Previous issue date: 2008 / Resumo: O crescimento epitaxial de nanoestruturas semicondutoras e metálicas é algo de grande interesse atualmente em ciência e tecnologia devido às propriedades singulares apresentadas pela matéria na escala nanométrica. Esta dissertação teve como objetivo principal a construção de um sistema de crescimento epitaxial baseado na técnica de epitaxia por feixe molecular (MBE, do inglês Molecular Beam Epitaxy). Inicialmente, aspectos básicos sobre a física e a tecnologia envolvidas em um sistema de MBE foram analisados. O que é MBE e quais são os princípios que governam seu funcionamento são perguntas intrigantes a um aluno do curso de engenharia elétrica. No decorrer do trabalho, todo o complexo sistema vácuo (bombeamento e monitoramento) teve de ser cuidadosamente montado e ajustado até que se obtivesse as condições ótimas de trabalho dados os componentes disponíveis bem como suas características e limitações. Conceitos teóricos e práticos foram aplicados de forma a tornar o sistema o mais simples, eficiente e amigável possível. As evaporadoras por feixe de elétrons foram montadas, testadas e ajustadas até que se pudesse alcançar os parâmetros de funcionamento desejados para estes dispositivos tão importantes dentro de um sistema de MBE. Toda a instrumentação envolvida no acionamento e no monitoramento destas fontes foi desenvolvido com base em conceitos simples de eletrônica analógica e, em alguns momentos, digital, além de soluções de software, sempre usando LabView. Os resultados do trabalho de construção do sistema puderam ser caracterizados posteriormente de maneira a aferir a confiabilidade dos parâmetros utilizados e das amostras crescidas. Estes resultados foram baseados em técnicas de microscopia de varredura por pontas (SPM, do inglês Scanning Probe Microscopy), as quais forneceram informações detalhadas sobre as nanoestruturas formadas e as superfícies dos substratos, dados estes muito importantes e que podem ser utilizados como indicadores das codições de funcionamento do sistema de crescimento / Abstract: The epitaxial growth of semiconductor and metallic nanostructures is a target of great interest nowadays in science and technology due to the unique properties presented by the matter at the nanometer scale. This dissertation had as the main goal the construction of a system for epitaxial growth based on the Molecular Beam Epitaxy (MBE) technique. First of all, basic aspects about the physics and the technology involved in a MBE system were analyzed. What is MBE and what are the principles that govern its operation are intriguing questions for an electrical engineering student. During this work, the entire complex vacuum system (pumping and monitoring) had to be carefully mounted and adjusted until the optimum conditions were obtained for the available components as well as their characteristics and limitations. Theoretical and practical concepts were applied so that the system become as simple, efficient and friendly as possible. The electron beam evaporation sources were mounted, tested and adjusted until the desired working parameters for these important devices were achieved. The whole instrumentation involved in the driving and in the monitoring of these sources was developed based on simple concepts of analog and, in some cases, digital electronics, besides software solutions, always using LabView. The performance of the system was evaluated by structural characterization using scanning probe microscopy techniques (SPM), which gave detailed information about the formed nanostructures and the substrates surfaces. These data can be used as indicators of the growth system operation conditions / Mestrado / Eletrônica, Microeletrônica e Optoeletrônica / Mestre em Engenharia Elétrica
214

Unusual electronic properties in LiFeAs probed by low temperature scanning tunneling microscopy and spectroscopy

Nag, Pranab Kumar 11 December 2017 (has links) (PDF)
In this thesis, the electronic properties in superconducting LiFeAs single crystal are investigated using low temperature scanning tunneling microscopy and spectroscopy (STM/S) at various temperatures. For this purpose, the differential conductance (dI/dV) measured by STS which is directly proportional to the local density of states (LDOS) of the sample to the sub-atomic precision, is used together with the topography information. The dI/dV spectra within the ±1 V energy range reveal a characteristic feature at around -350 mV to -400 mV in stoichiometric LiFeAs. This feature seems to be a universal property among all the Fe-based high temperature superconductors, because it is also found in Fe0.965Se1.035 and NaFe0.975Co0.025As single crystals at the energy of -210 mV and -200 mV, respectively. The temperature dependent spectroscopy data averaged over a spatially fixed clean area of 2 nm × 2 nm are successfully executed between 5 K and 20 K. The two distinct superconducting phases with critical temperatures Tc = 16 K and 18 K are observed. In addition, the distance between the dip position outside the superconducting gap and the superconducting coherence peak in the spectra remains temperature independent which confirms that it is not connected to an antiferromagnetic (AFM) spin resonance. The temperature dependent spectra have been measured between 5 K and 61 K within the energy range of ±100 mV as well. The hump structure at 42 mV tends to disappear around 60 K from unknown origin. The temperature dependent quasiparticle interference (QPI) has been studied within the temperature range between 6.7 K and 25 K and analyzed by the Fourier transformation of the measured spectroscopic maps. The dispersion plots in momentum space as a function of temperature show an enhancement of QPI intensity (±5.5 mV) within the superconducting gap at the Fermi level at 6.7 K near q ~ 0. This is interpreted on the basis of Andreev bound state. In both polarities outside of this, a depletion of QPI intensity is noticed between 5.5 mV and around 9 mV. At positive energies, the QPI intensity becomes very rich above 9 mV. The size of the enhanced QPI intensity near the Fermi level, and the edge of the rich QPI intensity beyond 9 mV are found to behave like superconducting order parameter with rising of temperature. Furthermore, an energy mode peaked at around 14 mV appears in the integrated QPI intensity below superconducting Tc (6.7 K). This is consistent with the observed peak at 1st derivative of the dI/dV spectra. In both of these cases, such 14 mV peak is suppressed at normal state (25 K). This mode is therefore directly related to superconductivity in LiFeAs. The off-stoichiometric LiFeAs single crystal with superconducting Tc of 6.5 K has a 10 mV rigid band shift of the Fermi level towards electron doping. The absence of the rich QPI intensity between 9 mV and 17 mV is found compared to the stoichiometric LiFeAs, and hence the 14 mV mode is absent here. This brings us to conclude once more time that such 14 mV energy mode is relevant for superconductivity in LiFeAs.
215

Optical Excitation in Scanning Tunneling Microscopy: From Surface Photovoltages to Charge Dynamics oin the Atomic Scale

Kloth, Philipp 15 December 2016 (has links)
No description available.
216

Metal Oxide Reactions in Complex Environments: High Electric Fields and Pressures above Ultrahigh Vacuum

Qin, Feili 08 1900 (has links)
Metal oxide reactions at metal oxide surfaces or at metal-metal oxide interfaces are of exceptional significance in areas such as catalysis, micro- and nanoelectronics, chemical sensors, and catalysis. Such reactions are frequently complicated by the presence of high electric fields and/or H2O-containing environments. The focus of this research was to understand (1) the iron oxide growth mechanism on Fe(111) at 300 K and 500 K together with the effect of high electric fields on these iron oxide films, and (2) the growth of alumina films on two faces of Ni3Al single crystal and the interaction of the resulting films with water vapor under non-UHV conditions. These studies were conducted with AES, LEED, and STM. XPS was also employed in the second study. Oxidation of Fe(111) at 300 K resulted in the formation of Fe2O3 and Fe3O4. The substrate is uniformly covered with an oxide film with relatively small oxide islands, i.e. 5-15 nm in width. At 500 K, Fe3O4 is the predominant oxide phase formed, and the growth of oxide is not uniform, but occurs as large islands (100 - 300 nm in width) interspersed with patches of uncovered substrate. Under the stress of STM induced high electric fields, dielectric breakdown of the iron oxide films formed at 300 K occurs at a critical bias voltage of 3.8 ± 0.5 V at varying field strengths. No reproducible result was obtained from the high field stress studies of the iron oxide formed at 500 K. Ni3Al(110) and Ni3Al(111) were oxidized at 900 K and 300 K, respectively. Annealing at 1100 K was required to order the alumina films in both cases. The results demonstrate that the structure of the 7 Å alumina films on Ni3Al(110) is k-like, which is in good agreement with the DFT calculations. Al2O3/Ni3Al(111) (γ'-phase) and Al2O3/Ni3Al(110) (κ-phase) films undergo drastic reorganization and reconstruction, and the eventual loss of all long-range order upon exposure to H2O pressure > 10-5 Torr. Al2O3/Ni3Al(110) film is significantly more sensitive to H2O vapor than the Al2O3/Ni3Al(111) film, and this may be due to the incommensurate nature of the oxide/Ni3Al(110) interface. STM measurements indicate that this effect is pressure- rather than exposure- dependent, and that the oxide instability is initiated at the oxide surface, rather than at the oxide/metal interface. The effect is not associated with formation of a surface hydroxide, yet is specific to H2O (similar O2 exposures have no effect).
217

Vysoce uspořádané tenké vrstvy oxidu kobaltu pro modelovou katalýzu / Highly ordered cobalt oxide thin films for model catalysis

Ronovský, Michal January 2020 (has links)
Hydrogen processing is becoming increasingly important not only in the production of electricity but also during its accumulation. One of the energy storage options are liquid organic hydrogen carriers (LOHC). The main drawback of LOHC is the need for a large amount of thermal energy to release molecular hydrogen. We can bypass this issue using heterogeneous catalysis by transferring hydrogen from LOHC to acetone and using the produced 2-propanol (IPA) in the fuel cell. This innovative strategy of getting electri- cal energy from LOHC can be potentially energetically neutral. In this work, we studied highly ordered Co3O4(111) model catalysts for IPA oxidation in the as-prepared state and enhanced with platinum (Pt) nanoparticles. Catalysts were prepared by Physical Vapour Deposition (PVD) and further investigated by means of Low Energy Electron Diffrac- tion (LEED), X-ray Photoelectron Spectroscopy (XPS), Scanning Tunneling Microscopy (STM) and Temperature Programmed Desorption (TPD). The nucleation process of Pt on the as-prepared Co3O4(111) surface was studied by depositing low amounts 0.04 and 0.13 monolayer (ML) of Pt, that create clusters as small as 2 or 3 atoms with no need for a special nucleation site. We have identified the formation of Pt-induced defects in the atomically flat cobalt oxide...
218

Vysoce uspořádané tenké vrstvy oxidu kobaltu pro modelovou katalýzu / Highly ordered cobalt oxide thin films for model catalysis

Ronovský, Michal January 2020 (has links)
Hydrogen processing is becoming increasingly important not only in the production of electricity but also during its accumulation. One of the energy storage options are liquid organic hydrogen carriers (LOHC). The main drawback of LOHC is the need for a large amount of thermal energy to release molecular hydrogen. We can bypass this issue using heterogeneous catalysis by transferring hydrogen from LOHC to acetone and using the produced 2-propanol (IPA) in the fuel cell. This innovative strategy of getting electri- cal energy from LOHC can be potentially energetically neutral. In this work, we studied highly ordered Co3O4(111) model catalysts for IPA oxidation in the as-prepared state and enhanced with platinum (Pt) nanoparticles. Catalysts were prepared by Physical Vapour Deposition (PVD) and further investigated by means of Low Energy Electron Diffrac- tion (LEED), X-ray Photoelectron Spectroscopy (XPS), Scanning Tunneling Microscopy (STM) and Temperature Programmed Desorption (TPD). The nucleation process of Pt on the as-prepared Co3O4(111) surface was studied by depositing low amounts 0.04 and 0.13 monolayer (ML) of Pt, that create clusters as small as 2 or 3 atoms with no need for a special nucleation site. We have identified the formation of Pt-induced defects in the atomically flat cobalt oxide...
219

Unusual electronic properties in LiFeAs probed by low temperature scanning tunneling microscopy and spectroscopy

Nag, Pranab Kumar 11 October 2017 (has links)
In this thesis, the electronic properties in superconducting LiFeAs single crystal are investigated using low temperature scanning tunneling microscopy and spectroscopy (STM/S) at various temperatures. For this purpose, the differential conductance (dI/dV) measured by STS which is directly proportional to the local density of states (LDOS) of the sample to the sub-atomic precision, is used together with the topography information. The dI/dV spectra within the ±1 V energy range reveal a characteristic feature at around -350 mV to -400 mV in stoichiometric LiFeAs. This feature seems to be a universal property among all the Fe-based high temperature superconductors, because it is also found in Fe0.965Se1.035 and NaFe0.975Co0.025As single crystals at the energy of -210 mV and -200 mV, respectively. The temperature dependent spectroscopy data averaged over a spatially fixed clean area of 2 nm × 2 nm are successfully executed between 5 K and 20 K. The two distinct superconducting phases with critical temperatures Tc = 16 K and 18 K are observed. In addition, the distance between the dip position outside the superconducting gap and the superconducting coherence peak in the spectra remains temperature independent which confirms that it is not connected to an antiferromagnetic (AFM) spin resonance. The temperature dependent spectra have been measured between 5 K and 61 K within the energy range of ±100 mV as well. The hump structure at 42 mV tends to disappear around 60 K from unknown origin. The temperature dependent quasiparticle interference (QPI) has been studied within the temperature range between 6.7 K and 25 K and analyzed by the Fourier transformation of the measured spectroscopic maps. The dispersion plots in momentum space as a function of temperature show an enhancement of QPI intensity (±5.5 mV) within the superconducting gap at the Fermi level at 6.7 K near q ~ 0. This is interpreted on the basis of Andreev bound state. In both polarities outside of this, a depletion of QPI intensity is noticed between 5.5 mV and around 9 mV. At positive energies, the QPI intensity becomes very rich above 9 mV. The size of the enhanced QPI intensity near the Fermi level, and the edge of the rich QPI intensity beyond 9 mV are found to behave like superconducting order parameter with rising of temperature. Furthermore, an energy mode peaked at around 14 mV appears in the integrated QPI intensity below superconducting Tc (6.7 K). This is consistent with the observed peak at 1st derivative of the dI/dV spectra. In both of these cases, such 14 mV peak is suppressed at normal state (25 K). This mode is therefore directly related to superconductivity in LiFeAs. The off-stoichiometric LiFeAs single crystal with superconducting Tc of 6.5 K has a 10 mV rigid band shift of the Fermi level towards electron doping. The absence of the rich QPI intensity between 9 mV and 17 mV is found compared to the stoichiometric LiFeAs, and hence the 14 mV mode is absent here. This brings us to conclude once more time that such 14 mV energy mode is relevant for superconductivity in LiFeAs.
220

Topological defect-induced magnetism in a nanographene

Mishra, Shantanu, Beyer, Doreen, Berger, Reinhard, Liu, Junzhi, Gröning, Oliver, Urgel, José I., Müllen, Klaus, Ruffieux, Pascal, Feng, Xinliang, Fasel, Roman 13 January 2021 (has links)
The on-surface reactions of 10-bromo-10'-(2,6-dimethylphenyl)-9,9'-bianthracene on Au(111) surface have been investigated by a combination of bond-resolved scanning tunneling microscopy, scanning tunneling spectroscopy, and tightbinding and mean-field Hubbard calculations. The reactions afford the synthesis of two open-shell nanographenes (1a and 1b) exhibiting different scenarios of all-carbon magnetism. 1a, an allbenzenoid nanographene with previously unreported triangulenelike termini, contains a high proportion of zigzag edges, which endows it with an exceedingly low frontier gap of 110 meV and edge-localized states. The dominant reaction product (1b) is a non-benzenoid nanographene consisting of a single pentagonal ring in a benzenoid framework. The presence of this nonbenzenoid topological defect, which alters the bond connectivity in the hexagonal lattice, results in a non-Kekulé nanographene with a spin S = ½, which is detected as a Kondo resonance. Our work provides evidence of all-carbon magnetism, and motivates the use of topological defects as structural elements toward engineering agnetism in carbon-based nanomaterials for spintronics.

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