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Ausgehend von einer kritischen Betrachtung der bekannten Meßverfahren zur Untersuchung von Halbleiteroberflächen wurde der Feldeffekt mit Sperrstrommessungen derart gekoppelt, dass gleichzeitig an dem Teil der Probe, der auf der Rückseite von einem in Sperr-Richtung vorgespannten pn-Übergang bedeckt ist, der Oberflächenleitwert und der Sperrstrom des pn-Übergangs gemessen werden. Der Sinn dieser Kopplung ist es, die Termanalyse gegenüber den bekannten Methoden zu verbessern. Die vorgenommene Erweiterung der Feldeffektuntersuchungen auf den stationären Nichtgleichgewichtzustand ermöglicht die direkte Messung der Aufspaltung des Ferminiveaus und damit die Bestimmung der Oberflächenrekombinationsgeschwindigkeit allein durch Oberflächenleitwertmessungen. Auch mit der Erweiterung der Sperrstromuntersuchungen, durch Messung der Sperrstromänderung bei Belichtung, ist es möglich, die Oberflächenrekombinationsgeschwindigkeit zu messen. Mit der entwickelten Apparatur wurde durch gleichzeitige Messung der Sperrstromänderungen und des Oberflächenleitwertes eine Verbreiterung der Sperrstromkurven verbunden mit einer Verschiebung des Sperrstrommaximums gegen das Leitwertminimum an CP-4-geätzten Germanium-Oberflächen beobachtet. Die Deutung dieser Erscheinung ermöglicht eine eindeutige Bestimmung des Energieniveaus des Rekombinationsterms und weist darauf hin, dass die Übergangswahrscheinlichkeiten des Rekombinationsterms keine Daten der Terme allein, sondern Daten der Terme und des Zustands der Oberfläche sind. Für die untersuchten, in CP-4-geätzten Oberflächen wurde die bei den Channeluntersuchungen gemachte Voraussetzung bestätigt, dass für die Terme in der oberen Hälfte der verbotenen Zone Cp/Cn > e2(Et – Ei)/kT gilt. Mit der entwickelten Methode zur Messung des Oberflächenleitwertes mit einem hochfrequenten Wechselstrom werden Verwehungseffekte der Ladungsträger vermieden. Durch die Parallelschaltung des ohmschen und des kapazitiven Leitwertes zwischen Inversionsschicht und Volumen werden weiterhin die Schwierigkeiten der Kontaktierung der Inversionsschicht umgangen. Einen solchen Kontakt herzustellen, ist besonders schwierig bei Halbleitern mit niedriger Intrinsic-Konzentration. Bei Silizium wurde diese Methode mit Erfolg angewendet. / Starting with a critical consideration of the well-established measurement procedures for the investigation of semiconductor surfaces, the field effect and the measurement of the reverse current have were linked in such a manner that the surface conductance and the reverse current could be measured simultaneously at that part of the specimen which was covered on the back side by a biased pn-junction. The use of this link-up is the improvement of the analysis of surface terms in comparison with the known methods. The implemented extension of the field effect measurements to the stationary non-equilibrium state allows the direct measurement of the split up of the Fermi level and in this way the determination of the surface recombination velocity by measurements of the surface conductance solely. Also with an extension of the measurements of the reverse current, by measuring the change in reverse current due to illumination, it is possible to determine the surface recombination velocity. By a simultaneous measurement of the changes in reverse current and the surface conductance with the developed apparatus it could be observed a broadening of the reverse current curve in conjunction with a shift of the reverse current maximum versus the conductance minimum on germanium surfaces etched with CP-4.The interpretation of this effect allows an unique determination of the energy level of the recombination term and points to the fact that the transient probabilities of the recombination term are not data of the term itself but data of the term and the state of the surface. By the investigations of the surfaces etched in CP-4, the requirements have been confirmed which were made in channel investigations that for the terms in the upper half of the forbidden zone it is Cp/Cn >e2(Et – Ei)/kT. With the developed method for the measurement of the surface conductance using a high frequency alternating current sweep out effects of the charge carriers can be avoided. Furthermore, by the shunt circuit of the ohmic and the capacitive conductance between the inversion layer and the bulk the difficulties in contacting the inversion layer will be avoided. The production of such a contact is especially difficult for semiconductors with a low intrinsic concentration. This method has been successfully applied to silicon.

Diese Arbeit beschreibt die optische Charakterisierung mittels Photolumineszenzspektroskopie (PL) von Halbleiter-Nanodrähten (ND) im allgemeinen und einzelnen GaN-ND und GaN-ND-Ensembles im speziellen. ND werden oftmals als vielversprechende Bausteine zukünftiger, kleinster Bauele- mente bezeichnet. Diese Vision beruht insbesondere auf einigen attraktiven Eigenheiten, die ND im allgemeinen zugeschrieben werden. Im ersten Teil dieser Arbeit werden exemplarisch einige dieser Eigenschaften näher untersucht. So wird anhand von temperaturabhängigen PL-Messungen an Au- und selbstinduzierten GaAs/(Al,Ga)As-ND der Einfluss des Keimmaterials auf die PL der ND untersucht. Weiterhin werden die optischen Eigenschaften von ZnO-ND untersucht, die auf Si-, Saphir- und ZnO-Substraten gewachsen wurden. Die optische Charakterisierung von GaN-ND nimmt den Hauptteil dieser Arbeit ein. Die detaillierte Untersuchung einzelner GaN-ND und von GaN-ND-Ensembles zeigt die Relevanz des großen Oberflächen-zu-Volumen-Verhältnisses und dass jeder ND ganz eigene optische Eigenschaften aufweist. Die unerwartet starke Verbreiterung des strahlenden Übergangs donatorgebundener Exzitonen wird durch das vermehrte Auftreten von Oberflächendonatoren erklärt, deren statistische Relevanz durch PL-Messungen an einzelnen ausgestreuten und freistehenden GaN-ND nachgewiesen werden kann. Weiterhin wird der Einfluss elektrischer Felder auf die optischen Eigenschaften von GaN-ND ermittelt. Die Ein- und Auskopplung von Licht mit GaN ND wird mithilfe von Reflektanz- und Ramanmessungen bestimmt. Die zentralen Ergebnisse dieser Arbeit motivieren die Einführung eines Modells, dass die typischerweise nichtexponentielle Rekombinationsdynamik in ND-Ensemblen erklärt. Es basiert auf einer Verteilung der Rekombinationsraten. Vorläufige Ergebnisse dieses Modells beschreiben das nichtexponentielle Rekombinationdynamik in GaN ND-Ensemblen zufriedenstellend und erlauben eine Abschätzung ihrer internen Quanteneffizienz. / This thesis presents a detailed investigation of the optical properties of semiconductor nanowires (NWs) in general and single GaN NWs and GaN NW ensembles in particular by photoluminescence (PL) spectroscopy. NWs are often considered as potential building blocks for future nanometer-scaled devices. This vision is based on several attractive features that are generally ascribed to NWs. In the first part of the thesis, some of these features are examined using semiconductor NWs of different materials. On the basis of the temperature-dependent PL of Au- and self-assisted GaAs/(Al,Ga)As core-shell NWs, the influence of foreign catalyst particles on the optical properties of NWs is investigated. The effect of the substrate choice is studied by comparing the PL of ZnO NWs grown on Si, Sapphire, and ZnO substrates. The major part of this thesis discusses the optical properties of GaN NWs. The investigation of the PL of single GaN NWs and GaN NW ensembles reveals the significance of their large surface-to-volume ratio and that each NW exhibits its own individual recombination behavior. An unexpected broadening of the donor-bound exciton transition is explained by the abundant presence of surface donors in NWs. The existence and statistical relevance of these surface donors is confirmed by PL experiments of single GaN NWs which are either dispersed or free-standing. Furthermore, the influence of electric fields on the optical properties of GaN NWs is investigated and the coupling of light with GaN NWs is studied by reflectance and Raman measurements. The central results of this thesis motivate the introduction of a model that explains the typically observed nonexponential recombination dynamics in NW ensembles. It is based on a distribution of recombination rates. Preliminary simulations using this model describe the nonexponential decay of GaN NW ensembles satisfactorily and allow for an estimation of their internal quantum efficiency.

The experimental work presented in this thesis is based on a wide assortment of very advanced and highly sophisticated photoelectron spectroscopy (PES) techniques. The objective of the present study has been to reveal and understand the electronic structure and electron dynamics in a broad spectrum of materials, ranging from wide band gap oxides, via semiconductors along with metals, and finally high-temperature superconductors. The first part of the thesis concerns laser-based pump-and-probe PES. This unique experimental technique has permitted a study of the excited electronic structure and the electron dynamics of several semiconductor surfaces. An insight into details of the adatom to restatom charge-transfer of the Ge(111)c(2x8) surface is presented, as well as an estimate for the timescale in which the dynamic adatoms of the Ge(111):Sn(sqrt3xsqrt3)R30deg surface operate. Further results comprise a novel unoccupied surface state at the GaSb(001) surface as well as a time-resolved study of the charge accumulation layer at the InAs(111)A/B surfaces. In the second part, high-resolution synchrotron based angle-resolved PES (ARPES) data from the cuprate high-temperature superconductor La(2-x)Sr(x)CuO(4) (LSCO) is presented. This extensive study, reveals detailed information about how the Fermi surface and electronic excitations evolve with doping in the superconducting state. The results comprise support for a connection between high- and low-energy electronic responses, the characteristics of the superconducting gap, and indication of a quantum phase transition between two different superconducting phases. In the third group of experiments we move away from the two-dimensional systems and concentrate on fully three-dimensional compounds. By the use of soft x-ray ARPES it is possible to extract the three-dimensional electronic structure in a straightforward manner with increased k(perpendicular)-resolution. As a result the first high-quality ARPES data from Cu2O is presented, as well as a novel method for extracting the (real space) electron density by ARPES. These experiments clearly display the advantages of using soft x-ray ARPES. If the material and type of experiment is chosen wisely, the benefit of the increased k||-window and the free electron final state, surpass the drawbacks of decreased count-rate and inferior energy resolution. Finally we return to the high-temperature superconductors (NCCO & Nd-LSCO) and make use of the increased bulk-sensitivity. From an evident change in the shape of the Fermi surface when moving from low to high photon energies, the durface to bulk difference in electronic structure is highlighted. / QC 20100810

This thesis presents a new theoretical formalism which incorporates dynamical effects in atomistic electronic structure and related calculations. This research, fundamental by nature, brings about a deeper understanding of the dynamical processes in a range of materials. This establishes technologically important correlation with experimentally measured macroscopic properties and materials characterization. This method—the first of its kind—is a natural and long overdue extension of customary adiabatically separated time-independent electronic structure methods. It accounts explicitly for atomic motion due to thermal and zero-point vibration. The approach developed requires no direct treatment of time dependence in the quantum mechanical calculations, making the method widely applicable utilizing currently available electronic structure and ab-initio molecular dynamics software. The formalism is extensively applied and demonstrated for the linear optical response of bulk gallium arsenide and electronic structure of the C(111) 2 x 1 surface. Both cases are complimented by comparison of key observables to experimental data which may be used to judge the quality of the results. The results are found to be in good agreement with experimental data, with most exceptions being readily explainable and well understood.

The research presented in this thesis concerns experimental studies of thin manganese silicide and germanide layers, grown by solid phase epitaxy on the Si(111)7×7 and the Ge(111)c(2×8) surfaces, respectively. The atomic and electronic structures, as well as growth modes of the epitaxial Mn-Si and Mn-Ge layers, were investigated by low-energy electron diffraction (LEED), angle-resolved photoelectron spectroscopy (ARPES), core-level spectroscopy (CLS), and scanning tunneling microscopy and spectroscopy (STM and STS). The magnetic properties of the Mn-Ge films were investigated by X-ray magnetic circular dichroism (XMCD). The Mn-Si layers, annealed at 400 °C, showed a √3×√3 LEED pattern, consistent with the formation of the stoichiometric monosilicide MnSi. Up to 4 monolayers (ML) of Mn coverage, island formation was observed. For higher Mn coverages, uniform film growth was found. Our results concerning morphology and the atomic and electronic structure of the Mn/Si(111)-√3×√3 surface, are in good agreement with a recent theoretical model for a layered MnSi structure and the √3×√3 surface structure. Similar to the Mn-Si case, the grown Mn-Ge films, annealed at 330 °C and 450 °C, showed a √3×√3 LEED pattern. This indicated the formation of the ordered Mn5Ge3 germanide. A strong tendency to island formation was observed for the Mn5Ge3 films, and a Mn coverage of about 32 ML was needed to obtain a continuous film. Our STM and CLS results are in good agreement with the established model for the bulk Mn5Ge3 germanide, with a surface termination of Mn atoms arranged in a honeycomb pattern. Mn-Ge films grown at a lower annealing temperature, 260 °C, showed a continuous film at lower coverages, with a film structure that is different compared to the structure of the Mn5Ge3 film. XMCD studies showed that the low-temperature films are ferromagnetic for 16 ML Mn coverage and above, with a Curie temperature of ~250 K.

No description available.