The microstructure and residual stress of Ni thin film coating on Si influence the properties significantly, which play an important role in advanced applications of the electric and magnetic properties. The properties of Ni thin film deposited on Si at various temperatures and for different thickness have been studied in this work. Samples were characterized by nanoindentation, Fourier transform infrared spectroscopy (FTIR), scanning electron microscope (SEM), electrical measurement, grazing angle X-ray diffraction (XRD) and photo reflection spectroscopy of white light. The nanoindentation measurements reveal similar loading curves and young¡¦s modulus for Ni thin films on Si at different deposition temperatures. However, the higher the deposition temperature, the lower is the hardness of the Ni thin film on Si. A maximum stress occurs at deposition temperature of 88-122 ¢XC. From FTIR spectra an unusual IR oscillating absorption of the Ni/Si film was observed from the samples which was deposited at 230 ¢XC for 15 min (23 nm) and for 30 min (52 nm) compared to other deposition duration and deposition temperatures at room temperature, 88 ¢XC, and 122 ¢XC. Furthermore, annealing experiments of the samples were performed after deposited at room temperature, and then annealed at respective temperatures of 88, 122, 230 ¢XC for the durations of 15 min and 30 min for comparison. However, the unmoral IR oscillation doesn¡¦t occur else where. The phase change of Ni/Si was analyzed by grazing angle XRD. A single phase of NiSi (103) structure was observed only in the samples deposited at 230 ¢XC. Further study of the oscillation in the FTIR spectra shows its origin should be related to surface plasmon resonance (SPR) mode. The SPR absorption peaks at 471 nm and 616 nm are analyzed by a photo reflection experiment. The SPR absorption is due to the nano structure of nickel silicide on Ni/Si surface formed during deposition at 230 ¢XC.

Techn. Universiẗat, Diss., 2000--Dresden.

Techn. Universiẗat, Diss., 2003--Chemnitz.

Zugl.: Dresden, Techn. Univ., Diss., 2009

Dans le but d’intégrer des technologies CMOS avec des cellules mémoires, une seule étape de siliciuration de tous les contacts permettrait de diminuer les couts et de faciliter l’intégration. La formation de siliciure simultanément au niveau des sources, drains et grilles avec du NiPt(10 at.%) est nécessaire pour la technologie FD-SOI parce que cette dernière induit des spécifications exigeantes en ce qui concerne la siliciuration. En effet, le siliciure formé avec le procédé Salicide se doit d’être très fin et stable pour contenir le phénomène de diffusion anormale du Ni qui pourrait être à l’origine de fuites de la jonction. De plus, la réduction des dimensions des cellules mémoires nécessite l’incorporation de dopants d’une manière alternative à l’implantation ionique. L’introduction de dopage au phosphore de manière in-situ pendant le dépôt de silicium nécessite la compréhension de l’interaction du siliciure et des dopants. Dans cette étude, différents types de dopage sont étudiés dans des substrats mono et poly-cristallins afin de correspondre aux multiples types de silicium qui sont présents dans les technologies et qui nécessitent une siliciuration. La redistribution du phosphore entraînée par la formation du siliciure est étudiée et discutée à l’aide de caractérisations par sonde atomique tomographique et spectrométrie de masse à ionisation secondaire à temps de vol. De plus, la réaction à l’état solide est étudiée à l’aide de diffraction par rayons-X afin de comprendre l’impact des dopants sur la séquence de phases. Finalement, la redistribution des dopants observée expérimentalement est étayée par des simulations basées sur un modèle par éléments finis / For the purpose of co-integrating the CMOS technology with memory cells, a unique step of silicidation of all the contacts would decrease costs and ease the integration. The simultaneous silicide formation on the source, drain and gate contacts with NiPt(10 at.%) is required for the FD-SOI technology because the latter induces challenging specifications for the silicidation. As a matter of fact, the silicide formed with the Salicide process must be very thin and stable to contain the NiSi piping phenomenon that could lead to junction leakage. Meanwhile, new integration roads and the reduction of the dimensions of the memory cells arise the need of other ways of dopant incorporation as a substitute to ionic implantation. The introduction of phosphorus by in-situ doping during the deposition of silicon requires the understanding of the interaction of silicide and dopants with this configuration. In this study the metallization of phosphorus doped Si is presented. Different doping types are investigated with mono and poly-crystalline substrates in order to match the various silicon layers needing a silicidation and present in the technologies. The phosphorus redistribution occurring during silicide formation is studied and discussed thanks to Atom Probe Tomography and Time-of-Flight Secondary Ion Mass Spectrometry analyses. Moreover, the solid-state reaction is studied thanks to X-Ray diffraction to understand the dopants’ impact on the phase sequence. Finally, the dopant redistribution is analyzed thanks to modeling

No description available.

3D VLSI with a CoolCube TM process allows vertically stacking several layers of devices with a unique connecting via density above a million/mm2. The thermal budget allowed to process the top transistor is currently limited by NiPt silicide stability of the bottom transistor. To extend the upper transistors thermal process window, Pre-Amorphization Implant (PAI) and Si-Capping were used to improve the stability of NiPt 15% on SiC:P and SiGe 30% :B accesses. While PAI enhances the silicide stability on SiC:P substrate from 600°C 2h to 700°C 2h, neither PAI nor Si-Capping improve silicide stability on SiGe 30% :B. To provide a solution for P accesses stability, NiCo 10% silicidation has been developed. Combined with PAI and Si-Capping, the germano-silicide offers a higher stability (up to 600°C 2h) than its NiPtSi 15% counterpart.

Among the well-known methods to form or modify the composition and physical properties of thin films, ion implantation has shown to be a very powerful technique. In particular, ion beam syntheses of binary iron silicide have been studied by several groups. Further, the interests in transition metal silicide systems are triggered by their potential use in advanced silicon based opto-electronic devices. In addition, ternary silicides have been by far less studied than their binary counterparts despite the fact that they have interesting magnetic and electronic properties. In this study, we investigate ion beam synthesis of Fe-Si binary structures and Fe-Co-Si ternary structures. This work involves fundamental investigation into development of a scalable synthesis process involving binary and ternary transitional metal silicide thin films and Nano-structures using low energy ion beams. Binary structures were synthesized by implanting Fe- at 50 keV energy. Since ion implantation is a dynamic process, Dynamic simulation techniques were used in these studies to determine saturation fluences for ion implantation. Also, static and dynamic simulation results were compared with experimental results. The outcome of simulations and experimental results indicate, dynamic simulation codes are more suitable than static version of the TRIM to simulate high fluence, low energy and, heavy ion implantation processes. Furthermore, binary Fe-Si phase distribution was determined at different implantation fluences and annealing temperatures. A higher fluence implantation at 2.16×1017 atoms/cm2 and annealing at 500 oC showed three different Fe-Si phase formations (β-FeSi2, FeSi and Fe3Si) in substrate. Further, annealing the samples at 800 oC for 60 minutes converted the Fe3Si phase into FeSi2 and FeSi phases. As an extension, a second set of Fe- ion implantations was carried with the same parameters while the substrate was placed under an external magnetic field. External magnetic fields stimulate the formation of magnetic phase centers in the substrate. X-ray diffraction (XRD) results shows formation of ferromagnetic Fe3Si phase in the Si matrix after annealing at 500 oC for 60 minutes. In addition, X-ray photoelectron spectra (XPS) provide further evidence for ferromagnetic metallic behavior of Fe3Si in the substrate. Ternary Fe-Co-Si structures were synthesized by implanting Fe- & Co- into a Si (100) substrate at an energy of 50 keV at saturation fluences. Both Fe- & Co- co-implantation were performed under external magnetic fields to enhance magnetic phase formation. Fe(1-x)CoxSi B20-type cubic structure can be synthesized on Si(100) substrate with 0.4≤x≤0.55 concentration range using ion implantation under external magnetic field. Moreover, magnetic measurement indicates a possible magnetic phase transformation at ~50 K. Further, XPS results also provide evidence for metallic & ferromagnetic properties in the thin film structure

Investigation of nitride fuels and their properties has, for decades, been propelled on the basis of their desirable high metal densities and high thermal conductivities, both of which oer intrinsic advantages to performance, economy, and safety in fast and light water reactor systems. In this time several key obstacles have been identied as impeding the implementation of these fuels for commercial applications; namely chemical interactions with air and steam, the noted diculty in sintering of the material, and the high costs associated with the enrichment of 15N. The combination of these limitations, historically, led to the well founded conclusion that the most appropriate use of nitride fuels was in the fast reactor fuel cycle, where the cost burdens associated with them is substantially less. Indeed, it is within this context that the vast majority of work on nitrides has been and continues to be done. Nevertheless, following the 2011 Fukushima-Daiichi nuclear accident, a concerted governmental-industrial eort was embarked upon to explore the alternatives of so-called \accident tolerant" and \high performance" fuels. These fuels would, at the same time, improve the response of the fuel-clad system to severe accidents and improve the economy of operation for light water reactor systems. Among the various candidates proposed are uranium nitride, uranium silicide, and a third \uranium nitride-silicide" composite featuring a mixture of the former. In this thesis a method has been established for the synthesis, fabrication, and characterization of high purity uranium nitride, and uranium nitride-silicide composites, prepared by the spark plasma sintering (SPS) technique. A specic result has been to isolate the impact of the processing parameters on the microstructure of representative fuel pellets, essentially permitting any conceivable microstructure of interest to be fabricated. This has enabled the development of a highly reproducible technique for the production of pellets with microstructures tailored towards any desired porosity between 88-99.9%TD, any grain size between 6-24 μm, and, in the case of  the uranium nitride-silicide composite, a silicide-coated UN matrix. This has permitted the evaluation of these microstructural characteristics on the performance of these materials, specically with respect to their role as accident tolerant fuels. This has generated results which have tightly coupled nitride performance with pellet microstructure, with important implications for the use of nitrides in water-cooled reactors. / Under artionden har forskning om nitridbranseln och dess egenskaper bedrivits pa grundval av nitridbransletsatravarda egenskaper avseende dess hoga metall tathet och hog varmeledningsformaga. Dessa egenskaper besitter vasentliga fordelar avseende prestanda, ekonomi och sakerhet for metallkylda som lattvatten reaktorer. Genom forskning har aven centrala begr ansningar identierats for implementering av nitridbranslen for kommersiellt bruk. Begransningar avser den kemiska interaktionen med luft och vattenanga, en uppmarksammad svarighet att sintring av materialet samt hoga kostnader forknippade med den nodvandiga anrikningen av 15-N. Kombinationen av dessa begransningar resulterade, tidigare, i en valgrundad slutsats att nitridbranslet mest andamalsenliga anvandningsomrade var i karnbranslecykeln for snabba reaktorer. Detta da kostnaderna forenade med implementeringen av branslet ar avsevart lagre. Inom detta sammanhang har majoriteten av forskning avseende nitrider bedrivits och fortskrider an idag. Dock, efter karnkraftsolyckan i Fukushima-Daiichi 2011, inleddes en samlad industriell och statlig anstrangning for att undersoka alternativ till sa kallade \olyckstoleranta" och \hogpresterande" branslen. Dessa branslen skulle samtidigt forbattra reaktionstiden for bransleinkapsling systemet mot allvarliga olyckor samt forbattra driftsekonomin av lattvattenreaktorer. Foreslagna kandidater ar urannitrid, uransilicid och en tredje \uran nitrid-silicid", komposit bestaende av en blandning av de foregaende. Genom denna avhandling har en metod faststallts for syntes, tillverkning och karaktarisering av uran nitrid av hog renhet samt uran nitrid-silicid kompositer, forberedda med tekniken SPS (Spark Plasma Sintering). Ett specikt resultat har varit att isolera eekten av processparametrar pa mikrostrukturen pa representativa branslekutsar. Detta mojliggor, i princip, framstallningen av alla tankbara mikrostrukturer utav intresse for tillverkning. Vidare har detta mojliggjort utvecklingen av en hogeligen reproducerbar  teknik for framstallningen av branslekutsar med mikrostrukturer skraddarsydda for onskad porositet mellan 88 och 99.9 % TD, och kornstorlek mellan 6 och 24 μm. Dartill har en metod for att belagga en matris av uran nitrid-silicid framarbetats. Detta har mojliggjort utvarderingen av dessa mikrostrukturella parametrars paverkan pa materialens prestanda, sarskilt avseende dess roll som olyckstoleranta branslen. Detta har genererat resultat som ar tatt sammanlankat nitridbranslets prestanda till kutsens mikrostruktur, med viktiga konsekvenser for den potentiella anvandningen av nitrider i lattvatten reaktorer. / <p>QC 20170210</p>

Thesis advisor: Dunwei Wang / When their electrodes are made of nanomaterials or materials with nanoscale features, devices for energy conversion and energy storage often exhibit new and improved properties. One of the main challenges in material science, however, is to synthesize these nanomaterials with designed functionality in a predictable way. This thesis presents our successes in synthesizing TiSi₂ nanostructures with various complexities using a chemical vapor deposition (CVD) method. Attention has been given to understanding the chemistry guiding the growth. The governing factor was found to be the surface energy differences between various crystal planes of orthorhombic TiSi₂ (C54 and C49). This understanding has allowed us to control the growth morphologies and to obtain one-dimensional (1D) nanowires, two-dimensional (2D) nanonets and three-dimensional (3D) complexes with rational designs by tuning the chemical reactions between precursors. Among all these morphologies, the 2D nanonet, which is micrometers wide and long but only approximately 15 nm thick, has attracted great interest because it is connected by simple nanostructures with single-crystalline junctions. It offers better mechanical strength and superior charge transport while preserving unique properties associated with the small-dimension nanostructure, which opens up the opportunity to use it for various energy related applications. In this thesis we focus on its applications in lithium ion batteries. With a unique heteronanostructure consisting of 2D TiSi₂ nanonets and active material coating, we demonstrate the performances of both anode and cathode of lithium ion batteries can be highly improved. For anode, Si nanoparticles are deposited as the coating and at a charge/discharge rate of 8400 mA/g, we measure specific capacities >1000 mAh/g with only an average of 0.1% decay per cycle over 100 cycles. For cathode, V₂O₅ is employed as an example. The TiSi₂/V₂O₅ nanostructures exhibit a specific capacityof 350 mAh/g, a power rate up to 14.5 kW/kg, and 78.7% capacity retention after 9800 cycles. In addition, TiSi₂ nanonet itself is found to be a good anode material due to the special layer-structure of C49 crystals. / Thesis (PhD) — Boston College, 2012. / Submitted to: Boston College. Graduate School of Arts and Sciences. / Discipline: Chemistry.