This thesis is a first attempt to make an extended study of the life and work of a single Thai novelist. Chapter I supplies the need for a statement about the contemporary setting in which the author worked and about the development of the novel. Although Dokmaisot is an outstanding figure in modern Thai literature, she remains somewhat apart from her contemporaries and material on which contrasts can be based is required. The starting point is taken as 1900. This is convenient because at this time literary magazines printing original work heralding the emergence of the novel were beginning to appear. An account of Dokmaisot's life is then given. She was the first Thai female professional novelist and it is important to relate her personal life and that of her family to the development of her work. Chapters III to VIII contain a treatment, descriptive and critical, of thirteen novels. In general a progression through time is followed but this has been departed from in some instances in the interests of showing the novelist's development more clearly. Dokmaisot's last and unfinished novel is given separate treatment in Chapter IX. It represents a departure in motive, attitude, and tone from her previous writing even though some characters, appearing in an earlier work, are used again. A political motive and criticism directed against the Thai Government, especially in its social policies, appear overtly for the first time. Chapter X takes the world of Dokmaisot which has emerged through fourteen novels involving at least two hundred characters and summarizes its attitudes in sections which deal with religious, social, and external influences such as that of the West. The thesis concludes with an appendix in which the twenty-two other works of Dokmaisot, including four poems and a play, are briefly considered. A second appendix is a list of life ceremonies referred to in the novels. Appendix three contains comment on Thai terms for "novel".

For many decades, the revolution in semiconductor industry has continuously been powered by the successful down scaling of complementary metal-oxide semiconductor (CMOS) technology to produce integrated circuits with improved performance at lower cost. However, current charge-based CMOS technology is already approaching physical limits and, thus, encounters a number of technological challenges. Spintronics is an emerging and rapidly evolving research field that has a great potential to overcome these challenges confronting CMOS by introducing the electron spin, in addition to electron charge, as an extra degree of freedom. Traditional spintronic devices are based on the alignment of spins in magnetic layers, manipulated by spin-polarized currents. Thus, employing the non-volatile nature of layer magnetization and its direction to represent the bit state, spintronics provides power-efficient devices that are attractive for memory and logic applications. Magnetoresistive random access memory (MRAM) is one of the most essential applications of spin based electronics, which has already been recognized as the leading candidate for future universal memory. MRAM cells use spin-based magnetic tunnel junctions (MTJs) as the fundamental storage blocks. These conventional MTJs employ the use of magnetic elements with a single axis of magnetization, which provide two resistance states, capable of storing one bit of information. Enhancing the memory density is one of the major challenges encountered by MRAM industry, as the straightforward approach of reducing the magnetic bit size is unfeasible with magnetic devices due to intrinsic superparamagnetism effects. In this thesis, we propose increasing the bit density in MRAM by implementing shape anisotropy induced multistate MTJs. By patterning the free ferromagnetic layer of MTJs in the shape of four intersecting ellipses we achieve four in-plane stable axes of magnetization, capable of providing eight resistance states in total, the switching between which is performed by spin-orbit torques (SOT) in spin Hall metals (SHM). We initially verify the proposed concept with micromagnetic simulations followed by fabrication and, consequent, room temperature characterization of the first experimental prototypes.

Black carbon affects the atmosphere, clouds, and the albedo of snow. These effects of black carbon are a fact but exactly what they entail is not well known. The atmosphere, the albedo in ice crystals and snow (due to warming of the snows’ surface), clouds’ life time and cloud cover are all influenced because black carbon absorbs radiation, thus altering the radiative forcing (RF).Many models and measurements have been done to evaluate the effects of black carbon but they show very different results. This literature study examines papers and articles to see what and how much we know about black carbon and its climate effects. I conclude that there have been great differences in results that are evident due to the span that black carbon is thought to change the RF in the atmosphere (results ranging from +0.4 to +1.2 Wm-2), and snow (+0.007 to +0.054 Wm-2), as well as the albedo in snow (results ranging from -0.02 to -0.17, only including the results from studies with BC concentration of 1000 ng/g for increased comparability). I as well as many others suggest that models tend to get very different results because they use different starting conditions and equations and because models handle aerosols and clouds in different ways. This is largely because of a lack of information, especially concerning aerosols and clouds. / Sot påverkar atmosfären, moln och albedot i snö. Dessa effekter av sot är ett faktum, men exakt vad de innebär är inte väl känt. Atmosfären, albedo i iskristaller och snö, uppvärmningen av snö och isytor, molns livstid och molntäckets utbredning påverkas av sot eftersom sot absorberar strålning, vilket förändra strålningsdrivningen och kan förånga moln, och att sot kan vara nuklider som kan skapa moln.Många modeller och mätningar har gjorts för att utvärdera effekterna av sot men de visar mycket olika resultat. Denna litteraturstudie undersöker artiklar för att se vad och hur mycket vi vet om sot och dess klimatpåverkan. Jag drar slutsatsen att det har finns stora skillnader i resultat vilket återspeglas i det stora intervall som sot tros ändra strålningsdrivningen i atmosfären (resultat som sträcker sig från 0,4 till 1,2 Wm-2) och snö (0,007 till 0.054 Wm-2), liksom albedo i snö (resultat som sträcker sig från -0,02 till -0,17 Wm-2). Jag samt mång andra föreslår att modeller tenderar att få väldigt olika resultat eftersom de använder olika startvillkor, ekvationer och eftersom modellerna hanterar aerosoler och moln på olika sätt. Detta är till stor del på grund av bristande information, särskilt när det gäller aerosoler och moln.

Magnetic random­access memory (MRAM) devices have been widely studied since the 1960s. During this time, the size of spintronic devices has continued to decrease. Conse quently, there is now an urgent need for new low­dimensional magnetic materials to mimic the traditional structures of spintronics at the nanoscale. We also require new effective mechanisms to conduct the main functions of memory devices, which are: reading, writ ing, and storing data. To date, most research efforts have focused on MRAM devices based on magnetic tun nel junction (MTJ), such as a conventional field­driven MRAM and spin­transfer torque (STT)­MRAM devices. Consequently, many efforts are currently focusing on new alterna tives using different techniques, such as spin­orbit torque (SOT) and magnetic skyrmions (a skyrmion is the smallest potential disruption to a uniform magnet required to obtain more effective memory devices). The most promising memory devices are SOT­MRAMs and skyrmion­based memories. This study investigates the magnetic properties of 1T­phase vanadium dichalcogenide (VXY) Janus monolayers, where X, Y= S, Se, or Te (i.e., monolayers that exhibit inversion symme try breaking due to the presence of different chalcogen elements). This study is developed along four directions: (I) the nature of the magnetism and the SOT effect of Janus mono layers; (II) the Dzyaloshinskii Moriya interaction (DMI); (III) investigation of stability en hancement by adopting practical procedures for industry; and (IV) study of the effect of a hexagonal boron nitride (h­BN) monolayer as an insulator on the magnetism of the VXY monolayer. This study provides a clear perspective for the next generation of memory de vices, such as SOT­MRAMs based on transition metal dichalcogenide monolayers.

Afin de réduire la consommation de puissance des futures générations de systèmesélectroniques, une solution est d’intégrer de la non-volatilité au sein même des cellulesmémoires. Dans cette optique, l’utilisation du retournement de l’aimantation d’un matériauferromagnétique comme support de l’information a été utilisée initialement dans un conceptde mémoire, la MRAM. La dernière évolution de cette technologie, la SOT-RAM, utilise desphénomènes nouveaux appelés SOTs afin de contrôler la direction de l’aimantation. Parrapport aux générations précédentes (STT-MRAM notamment), elle devrait permettred’améliorer la vitesse d’écriture en conservant une endurance adaptée pour des utilisations enmémoires cache où en mémoire centrale. Le terme SOTs est une dénomination généraledésignant l’ensemble des effets, encore mal connus, liés au couplage spin-orbite et permettantle retournement de l’aimantation d’une cellule mémoire.Ce travail de thèse a eu pour objectif d’étudier les SOTs via un système expérimental demesure quasi-statique basé sur les effets Hall extraordinaires et planaires. Sonimplémentation et la méthode d’analyse associée, ainsi que les considérations théoriquesnécessaires à l’interprétation des résultats sont détaillées dans ce manuscrit. Il a été montréque le retournement de l’aimantation dans des systèmes à aimantation perpendiculaire à basede cobalt-platine ne peut être expliqué par les modèles simples considérés jusqu’à présentdans la littérature. En effet, il a été mis en évidence qu’au moins deux effets simultanés doiventêtre pris en compte pour expliquer les phénomènes observés. Par ailleurs, ceux-ci présententune sensibilité différente à la fois à une altération de la structure cristalline et à une variationde température. / In order to reduce power consumption in next generations’ electronic devices, one potentialsolution is to implement non-volatility in memory cells. In this goal, the magnetizationswitching of a ferromagnetic material has been used in a memory concept: the MRAM. Thelatest development of this technology, called SOT-RAM, is based on new phenomena calledSOTs (Spin-Orbit Torques) in order to control magnetization direction. Contrary to precedentgenerations (STT-MRAM), it should achieve a higher operating speed and an enduranceadapted for cache and main memories applications. SOTs is a generic term referring to all theeffects, linked to the spin-orbit interaction, and that enable magnetization reversal. They areyet not perfectly understood.The main objective of this Ph.D. was then to study these SOTs through a quasi-staticexperimental measurement setup based on anomalous and planar Hall effects. Itsimplementation and the associated analysis method, as well as the required theoreticalconsiderations for data interpretation are detailed in this manuscript. It has been highlightedthat magnetization switching in perpendicularly magnetization cobalt-platinum systemscannot be explained by the simple models considered thus far in the literature. As a matter offact it has been evidenced that at least two effects have to be considered in order to explainobserved phenomena. In addition, they present different susceptibility both to a modificationof the crystal structure and to a temperature change.

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The mixed-signal and analog design on a pre-diffused array is a challenging task, given that the digital array is a linear matrix arrangement of minimum-length transistors. To surmount this drawback a specific discipline for designing analog circuits over such array is required. An important novel technique proposed is the use of TAT (Trapezoidal Associations of Transistors) composite transistors on the semi-custom Sea-Of-Transistors (SOT) array. The analysis and advantages of TAT arrangement are extensively analyzed and demonstrated, with simulation and measurement comparisons to equivalent single transistors. Basic analog cells were also designed as well in full-custom and TAT versions in 1.0mm and 0.5mm digital CMOS technologies. Most of the circuits were prototyped in full-custom and TAT-based on pre-diffused SOT arrays. An innovative demonstration of the TAT technique is shown with the design and implementation of a mixed-signal analog system, i. e., a fully differential 2nd order Sigma-Delta Analog-to-Digital (A/D) modulator, fabricated in both full-custom and SOT array methodologies in 0.5mm CMOS technology from MOSIS foundry. Three test-chips were designed and fabricated in 0.5mm. Two of them are IC chips containing the full-custom and SOT array versions of a 2nd-Order Sigma-Delta A/D modulator. The third IC contains a transistors-structure (TAT and single) and analog cells placed side-by-side, block components (Comparator and Folded-cascode OTA) of the Sigma-Delta modulator.

The mixed-signal and analog design on a pre-diffused array is a challenging task, given that the digital array is a linear matrix arrangement of minimum-length transistors. To surmount this drawback a specific discipline for designing analog circuits over such array is required. An important novel technique proposed is the use of TAT (Trapezoidal Associations of Transistors) composite transistors on the semi-custom Sea-Of-Transistors (SOT) array. The analysis and advantages of TAT arrangement are extensively analyzed and demonstrated, with simulation and measurement comparisons to equivalent single transistors. Basic analog cells were also designed as well in full-custom and TAT versions in 1.0mm and 0.5mm digital CMOS technologies. Most of the circuits were prototyped in full-custom and TAT-based on pre-diffused SOT arrays. An innovative demonstration of the TAT technique is shown with the design and implementation of a mixed-signal analog system, i. e., a fully differential 2nd order Sigma-Delta Analog-to-Digital (A/D) modulator, fabricated in both full-custom and SOT array methodologies in 0.5mm CMOS technology from MOSIS foundry. Three test-chips were designed and fabricated in 0.5mm. Two of them are IC chips containing the full-custom and SOT array versions of a 2nd-Order Sigma-Delta A/D modulator. The third IC contains a transistors-structure (TAT and single) and analog cells placed side-by-side, block components (Comparator and Folded-cascode OTA) of the Sigma-Delta modulator.

The mixed-signal and analog design on a pre-diffused array is a challenging task, given that the digital array is a linear matrix arrangement of minimum-length transistors. To surmount this drawback a specific discipline for designing analog circuits over such array is required. An important novel technique proposed is the use of TAT (Trapezoidal Associations of Transistors) composite transistors on the semi-custom Sea-Of-Transistors (SOT) array. The analysis and advantages of TAT arrangement are extensively analyzed and demonstrated, with simulation and measurement comparisons to equivalent single transistors. Basic analog cells were also designed as well in full-custom and TAT versions in 1.0mm and 0.5mm digital CMOS technologies. Most of the circuits were prototyped in full-custom and TAT-based on pre-diffused SOT arrays. An innovative demonstration of the TAT technique is shown with the design and implementation of a mixed-signal analog system, i. e., a fully differential 2nd order Sigma-Delta Analog-to-Digital (A/D) modulator, fabricated in both full-custom and SOT array methodologies in 0.5mm CMOS technology from MOSIS foundry. Three test-chips were designed and fabricated in 0.5mm. Two of them are IC chips containing the full-custom and SOT array versions of a 2nd-Order Sigma-Delta A/D modulator. The third IC contains a transistors-structure (TAT and single) and analog cells placed side-by-side, block components (Comparator and Folded-cascode OTA) of the Sigma-Delta modulator.

The main purpose of this study is to establish a Turkish slips of the tongue (SOT) corpus and make typological comparisons with English, French and German corpora. In the first part of the study, a slips of the tongue corpus has been created. 85 podcast recordings were analyzed and 53 SOT errors were found. SOT errors were extracted from the podcasts and these audio clips were combined with their spectrograms in a flash video. Classification of SOT errors were carried out with respect to linguistic units involved, type of error, and repair behavior. In this study it is hypothesized that Turkish will have more morphological errors due to agglutination, and Turkish will have less phonological errors as vowel harmony will function as an extra control mechanism. Classification of the SOT errors with respect to linguistic units that are involved shows that 54.27% of the errors are phonological, 16.98% of errors are morphological, 13.21% of errors are lexical and 7.55% errors are phrasal. The classification with respect to error type shows that 26.42% of errors are anticipations, 30,19% of errors are perseverations, 18.87% errors are substitutions and 7.56% of errors are blends. There is a difference in the percentages of errors as compared to the other corpora. Turkish has more morphological and phonological errors. Also the data shows that there are more perseverations than anticipations, similar to German. Typological comparisons with other languages suggests that the difference in the ratio might be caused by the SOV sentence structure rather than agglutination. The first hypothesis was therefore confirmed partly. However, the second hypothesis was not supported. Vowel harmony did not function as a control mechanism on the phonological well-formedness of the utterance. Rather, it seems to be located at the level of morpho-phonology in the lexicon proper. Turkish having more phonological errors might also be related with a higher demand on working memory because of the head-final SOV sentence structure. In order to be able to draw more reliable conclusions the size of the Turkish SOT database needs to be increased.