One of the most remarkable achievements of modern condensed matter physics is the discovery of topological phases of matter. Materials in a non-trivial topological phase or the topological insulators can be distinguished by their unique electronic and transport properties which are indifferent to different types of perturbations and thus open new routes towards the dissipationless transport. Explaining their properties requires proper involvement of relativistic approach as well as topological analysis. Among different classes of topological insulators, the Z2 topological insulators have drawn special attention due to their strong spin-orbit coupling which makes them a promising candidate for spintronics application, especially for magnetic memory devices. Due to their inherent strong spin-orbit coupling, they provide an efficient way to manipulate electronic spin with an applied electric field via spin orbit torque. The topological insulators have been found to be far more superior in manipulating the magnetic order parameter of a ferromagnet compared to the conventional heavy metals like platinum or tantalum. Another milestone in magnetic memory devices is marked by the introduction of antiferromagnetic memory devices which has not drawn any attention for long time as they cannot be controlled by an applied magnetic field. Recently it has been found that in case of a non-centrosymmetric antiferromagnet, the magnetic order parameter can be manipulated by with spin-orbit torque which also have been verified experimentally. The advantages of antiferromagnetic devices over ferromagnetic devices are that they allow faster switching speed and they are immune to an external magneticfield which are two highly solicited properties for next generation spintronic devices. This thesis is focused on understanding the transport properties in topologically nontrivial materials and their interface with different magnetic material. We use simplified continuum model as well as tight binding models to capture the salient features of these systems. Using non-equilibrium Green's function we explore their transport properties as well as spin-charge conversion mechanism. Our finding would provide a better understanding of these new class of materials and thus would be instrumental to discover new mechanisms to manipulate their properties.

Systems with strong spin-orbit coupling are of particular interest in solid state physics as an avenue for observing and manipulating spin physics using standard electrical techniques. This dissertation focuses on the characteristics of elemental bismuth (Bi), which exhibits some of the strongest intrinsic spin-orbit coupling of all elements, and InSb, which exhibits some of the strongest intrinsic spin-orbit coupling of all compound semiconductors. The experiments performed study the quantum transport signatures of nano- and micron-scale lithographically defined devices as well as spin-orbit coupled material/ferromagnet interfaces. All Bi structures are fabricated from Bi thin "films, and hence a detailed analysis of<br />the characteristics of Bi "film growth by thermal evaporation is provided. Morphologically and electrically high quality "films are grown using a two stage deposition procedure. The phase and spin coherence of Bi geometries constrained in one, two, and three dimensions are systematically studied by analysis of the weak antilocalization transport signature, a quantum interference phenomenon sensitive to spin-orbit coupling. The "findings indicate that the phase coherence scales proportionally to the limiting dimension of the structure for sizes less than 500 nm. Specifically, in Bi wires, the phase coherence length is approximately as long as the wire width. Dephasing due to quantum confinement e"ffects limit the phase coherence in small Bi structures, impairing the observation of controlled interference phenomena in nano-scale Bi rings. The spin coherence length is independent of dimensional constraint by the film thickness, but increases significantly as the lateral dimensions, such as wire width, are constrained. This is a consequence of the quantum transport contribution from the strongly spin-orbit coupled Bi(001) surface state. To probe the Bi surface state further, Bi/CoFe junctions are fabricated. The anisotropic magnetoresistance of the CoFe is modifi"ed when carriers tunnel into the CoFe from Bi, possibly due to a spin dependent tunneling process or an interaction between the spin polarized density of states in CoFe and the anisotropic spin-orbit coupled density of states in Bi. InSb/CoFe junctions are studied as InSb "films are a simpler spin-orbit coupled system compared to Bi "films. For temperatures below 3.5 K, a large, symmetric, and abrupt negative magnetoresistance is observed. The low-"field high resistance state has similar temperature and magnetic "field dependences as the superconducting phase, but a superconducting component in the device measurements seems absent. A differential conductance measurement of the InSb/CoFe interface during spin injection indicates a quasiparticle gap present at the Fermi energy, coinciding with the large magnetoresistance. / Ph. D.

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Dans cette thèse, nous explorons des matériaux basés sur le bismuth qui peuvent présenter des propriétés topologiques. Bi est un composant d’Isolants Topologiques identifiés qui consistent en un volume isolant tout en présentant aussi des états électroniques conducteurs en surface topologiquement protégés. En particulier, ces états de surface sont polarisés en spin et sont protégés par la symétrie du renversement du temps. L’attrait des Isolants Topologiques découle non seulement de leur intérêt évident du point de vue de la physique fondamentale, mais aussi du fait qu’ils puissent trouver une application en spintronics et dans les ordinateurs quantiques.Dans ces systèmes, le couplage spin-orbit joue un rôle central. Le couplage spin-orbit peut aussi mener à la levée de dégénérescences de Rashba ou de Dresselhaus, phénomènes découlant de la brisure en symétrie respectivement engendrée par la surface/interface d’un système ou de l’inhérente structure cristalline atomique.L’interprétation de mesures de structures de bandes dépendantes du spin, comme observées par spectroscopie par photoemission résolue en angle (et en spin), est appuyée et complémentée par des calculs ab-initio Korringa-Kohn-Rostoker de la structure électronique qui incluent tous les aspects des systèmes examinés : en particulier le couplage spin-orbit, fondamentalement compris grâce à une approche entièrement relativiste.Nous avons d’abord déposé des couches minces de Bi sur un substrat d’InAs(111). Un cristal de Bi de très bonne qualité est obtenu, confirmé par la reproduction par étude théorique des bandes électroniques mesurées. En parallèle de la croissance de la couche de Bi, nous observons que l’In et le Bi forment des cristaux d’InBi, exposant des états de surface topologiques. Nos analyses théoriques confirment que ces états de surface sont polarisés en spin.Dans la seconde partie de la thèse, Bi est utilisé comme un dopant dans InAs, donnant un alliage d’InAsBi. L’intense couplage spin-orbit apporté par le Bi génère simultanément des effets Rashba et Dresselhaus mesurables, levant par conséquence la dégénérescence des états de surface de manière complètement atypique, donnant des états non-hélicoïdaux polarisés en spin. / In this thesis, we explore bismuth based materials that may exhibit topological properties. Bi is a parent compound of known Topological Insulators which consist of an insulating bulk while also presenting topologically protected conducting electronic surface states. In particular, these surface states are spin polarised and are protected by time-reversal symmetry. The dual appeal of topological insulators stems not only from their obvious interest from a fundamental physics point of view, but also from the fact that they may find use in spintronics and quantum computing.In those systems the spin-orbit coupling plays a central role. Spin-orbit coupling can also lead to the Rashba or Dresselhaus splitting, phenomena arising from the symmetry breaking respectively engendered by the surface/interface of a system or from the inherent atomic crystal structure.The interpretation of measured spin dependent band structure, as observed in (Spin-) and Angle-Resolved Photoemission Spectroscopy, was supported and completed by ab-initio Korringa-Kohn-Rostoker electronic structure calculations which account for all aspects of the investigated systems: in particular spin-orbit coupling, fundamentally included thanks to a fully relativistic approach.We first deposited Bi thin films onto a InAs(111) substrate. A crystal of Bi of very high quality was grown, confirmed by reproduction of the measured electronic bands by theoretical investigation. In parallel to Bi film growth, we observed that In and Bi form InBi crystals, exhibiting topological surface states. Our theoretical analyses confirm that these surface states are spin polarised.In the second part of the thesis, Bi was used as a dopant within InAs, forming an InAsBi alloy system. The strong spin-orbit coupling brought on by Bi generated simultaneously measurable Rashba and Dresselhaus effects, consequently splitting surface states in a completely atypical manner, giving non-helical spin polarised states.

Dans cette thèse, nous présentons la conception et les performances de capteurs magnétiques basés sur les technologies AMR et GMR en vue d'une utilisation dans la navigation. Afin d'obtenir une sensibilité et une linéarité optimales à champ nul, le design des capteurs utilise des barberpoles et un pont de wheatstone pour l'un et prend avantage des différentes anisotropies et couplages pour l'autre. Les capteurs sont fabriqués par pulvérisations cathodiques et photolithographies et leurs performances en terme de sensibilité, de linéarité et de bruit sont testées et comparées. La conception de gradiomètres nécessaires à la navigation magnéto-inertielle repose sur l'utilisation de magnétorésistances placées aux extrémités du capteur reliées par un pont de WheatStone dont la sortie est proportionnelle au gradient du champ magnétique. Des concentrateurs de Flux destinés à amplifier le champ afin d'améliorer la sensibilité sont conçus et testés sur les capteurs. Un concentrateur de flux destiné à amplifier un champ ayant la forme du gradient est proposé comme amélioration des gradiomètres. Des solutions innovantes pour le swithching d'anisotropie et la compensation d'offset utilisant l'effet Hall de spin et le couplage spin-transfer sont étudiées. Dans cette optique, un dispositif de mesure du couplage spin-transfer appelé spin-torque-bridge est conçu et utilisé pour étudier l'effet Hall de spin et le spin transfer dans différentes multi-couches. / In this work, we present the conception and the performances of AMR and GMR-based sensors for navigation applications In order to obtain the best sensitivity and linearity at zero field, the design include barberpoles and a Wheatstone bridge for the first and takes advantage of the different anisotropies and coupling for the other. The sensor are fabricated by magnetron sputtering and photolithography and their performances in terms of sensitivity, linearity and noise are compared. The concept of gradiometers used for magneto-inertial navigation is based on the utilisation of magnetoresistances placed at each extremity of the sensor connected by a wheatstone bridge whose output is proportional to the gradient of the magnetic field. Flux concentrators designed to amplify the incoming field in order to improve the sensitivity are fabricated and tested on the sensors. A flux concentrator designed to amplify a magnetic gradient is proposed as an improvement of the gradiometers. Innovant solutions for low consumption anisotropy switching and offset compensation are being experimented using spin Hall effect and spin transfer torque with adjacent Pt and AuW layers. In that regard a spin torque measurement device: the spin-torque-bridge, is designed and used to study the spin hall effect and the spin transfer couplings in different multi layers.

京都大学 / 0048 / 新制・課程博士 / 博士(理学) / 甲第21598号 / 理博第4505号 / 新制||理||1647(附属図書館) / 京都大学大学院理学研究科化学専攻 / (主査)教授 小野 輝男, 教授 吉村 一良, 教授 島川 祐一 / 学位規則第4条第1項該当 / Doctor of Science / Kyoto University / DGAM

Nous avons étudié par des méthodes numériques et en théorie k.p avancée les propriétés tunnel d’électrons et de trous dans des systèmes modèles et hétérostructures composés de semi-conducteurs impliquant des interactions spin-orbite de volume. Nous démontrons que le couplage entre les interactions spin-orbite et d’échange à l’interface de jonctions tunnel résulte en un fort contraste de transmission de porteurs selon le signe de la composante de leur vecteur d’onde dans le plan de la jonction. Cet effet conduit à un effet tunnel anormal d’interface que nous appelons « Effet Hall Tunnel Anormal » (ATHE). De façon similaire, des processus tunnel non-conventionnels se manifestant sur des isolants topologiques ont été prédits par d’autres auteurs. Alors que l’ensemble de ces effets Hall anormaux sont liés aux interactions spin-orbite, les effets tunnel anormaux diffèrent des effets Hall tunnel, des effets Hall et des effets Hall de spin par la forte amplitude prédite ainsi que par des phénomènes de chiralité. Ces propriétés possèdent un lien nontrivial avec la symétrie du système. L’ensemble de ces résultats démontre l’existence d’une nouvelle classe d’effets tunnel qui devaient être étudiés expérimentalement dans un futur proche. En ce qui concerne la bande de valence, nous démontrons, en utilisant un Hamiltonien 14x14 prolongeant un modèle 2x2, que le calcul décrivant l’ATHE repose sur un traitement subtil des états dits « spurious » (états non-physiques) et nous donnons quelques éléments d’amélioration et de compréhension. Dans ce mémoire de thèse, nous développons deux méthodes numériques pour résoudre le problème des états spurious en développant en parallèle des méthodes k.p respectivement à 14 bandes et 30 bandes afin de décrire des matériaux semiconducteurs à gap indirect. Les calculs menés dans la bande de valence d’hétérostructures semiconductrice incluant interfaces et barrières tunnel (approches 6x6 et 14x14) sans centre de symétrie d’inversion mettent en évidence des propriétés d’asymétrie équivalente à celles obtenues dans la bande de conduction. De tels effets sont interprétés, dans le cadre de calculs de perturbation en transport basés sur des techniques de fonctions de Green, par des effets chiraux orbitaux lors du branchement tunnel des fonctions évanescentes dans la barrière. / We report on theoretical, analytical and computational investigations and k.p calculations of electron and hole tunneling, in model systems and heterostructures composed of exchange-split III-V semiconductors involving spin-orbit interaction (SOI). We show that the interplay of SOI and exchange interactions at interfaces and tunnel junctions results in a large difference of transmission for carriers, depending on the sign of their incident in-plane wave vector (k//): this leads to interfacial skew-tunneling effects that we refer to as Anomalous Tunnel Hall Effect (ATHE). In a 2x2 exchange-split band model, the transmission asymmetry (A) between incidence angles related to +k// and -k// wave vector components, is shown to be maximal at peculiar points of the Brillouin zone corresponding to a totally quenched transmission (A = 100%). More generally, we demonstrate the universal character of the transmission asymmetry A vs. in-plane wavevector component, for given reduced kinetic energy and exchange parameter, A being universally scaled by a unique function, independent of the spin-orbit strength and of the material parameters. Similarly, striking tunneling phenomena arising in topological insulators have just been predicted. While they all are related to the spin-orbit directional anisotropy, ATHE differs from the tunneling Hall effect, spontaneous anomalous, and spin Hall effects, or spin-galvanic effect, previously reported for electron transport, by its giant forward asymmetry and chiral nature. These features have non-trivial connection with the symmetry properties of the system. All these results show that a new class of tunneling phenomena can now be investigated and experimentally probed.When valence bands are involved, we show (using 14x14 Hamiltonian and within a 2x2 toy model) that ATHE accurate calculations rely on a subtle treatment of the spurious (unphysical) states and we give an insight into the topology of the complex band structure. We introduce two numerical methods to remove spurious states and successfully, include them in 30-band codes able to describe indirect bandgap group-IV semiconductors. Calculations performed in the valence bands of model heterostructures including tunnel barriers, in both 6x6 and 14x14 k.p Hamiltonians without inversion asymmetry, more astonishingly highlight the same trends in the transmission asymmetry which appears to be related to the difference of orbital chirality and to the related branching (overlap) of the corresponding evanescent wave functions responsible for the tunneling current. Besides, we built an analytical model and developed scattering perturbative techniques based on Green’s function method to analytically deal with electrons and holes and to compare these results with numerical calculations. The agreement between the different approaches is very good. In the case of holes, the asymmetry appears to be robust and persists even when a single electrode is magnetic.

Afin de réduire la consommation de puissance des futures générations de systèmesélectroniques, une solution est d’intégrer de la non-volatilité au sein même des cellulesmémoires. Dans cette optique, l’utilisation du retournement de l’aimantation d’un matériauferromagnétique comme support de l’information a été utilisée initialement dans un conceptde mémoire, la MRAM. La dernière évolution de cette technologie, la SOT-RAM, utilise desphénomènes nouveaux appelés SOTs afin de contrôler la direction de l’aimantation. Parrapport aux générations précédentes (STT-MRAM notamment), elle devrait permettred’améliorer la vitesse d’écriture en conservant une endurance adaptée pour des utilisations enmémoires cache où en mémoire centrale. Le terme SOTs est une dénomination généraledésignant l’ensemble des effets, encore mal connus, liés au couplage spin-orbite et permettantle retournement de l’aimantation d’une cellule mémoire.Ce travail de thèse a eu pour objectif d’étudier les SOTs via un système expérimental demesure quasi-statique basé sur les effets Hall extraordinaires et planaires. Sonimplémentation et la méthode d’analyse associée, ainsi que les considérations théoriquesnécessaires à l’interprétation des résultats sont détaillées dans ce manuscrit. Il a été montréque le retournement de l’aimantation dans des systèmes à aimantation perpendiculaire à basede cobalt-platine ne peut être expliqué par les modèles simples considérés jusqu’à présentdans la littérature. En effet, il a été mis en évidence qu’au moins deux effets simultanés doiventêtre pris en compte pour expliquer les phénomènes observés. Par ailleurs, ceux-ci présententune sensibilité différente à la fois à une altération de la structure cristalline et à une variationde température. / In order to reduce power consumption in next generations’ electronic devices, one potentialsolution is to implement non-volatility in memory cells. In this goal, the magnetizationswitching of a ferromagnetic material has been used in a memory concept: the MRAM. Thelatest development of this technology, called SOT-RAM, is based on new phenomena calledSOTs (Spin-Orbit Torques) in order to control magnetization direction. Contrary to precedentgenerations (STT-MRAM), it should achieve a higher operating speed and an enduranceadapted for cache and main memories applications. SOTs is a generic term referring to all theeffects, linked to the spin-orbit interaction, and that enable magnetization reversal. They areyet not perfectly understood.The main objective of this Ph.D. was then to study these SOTs through a quasi-staticexperimental measurement setup based on anomalous and planar Hall effects. Itsimplementation and the associated analysis method, as well as the required theoreticalconsiderations for data interpretation are detailed in this manuscript. It has been highlightedthat magnetization switching in perpendicularly magnetization cobalt-platinum systemscannot be explained by the simple models considered thus far in the literature. As a matter offact it has been evidenced that at least two effects have to be considered in order to explainobserved phenomena. In addition, they present different susceptibility both to a modificationof the crystal structure and to a temperature change.

Neste trabalho apresentamos a determinação autoconsistente da constante de interação spin-órbita em heteroestruturas com duas sub-bandas. Como recentemente proposto, ao obter o hamiltoneano de um sistema com duas sub-bandas na aproximação de massa efetiva, constata-se a presença de um acoplamento inter-subbanda que não se anula mesmo em heteroestruturas simétricas. Apresentamos aqui as deduções teóricas que levaram à proposição desse novo acoplamento e mostramos o cálculo autoconsistente da intensidade do acoplamento e a comparamos com a intensidade do acoplamento Rashba, já amplamente estudado. Discutimos o método k.p e a Aproximação da Função Envelope e mostramos a obtenção do modelo de Kane 8x8 para semicondutores com estrutura zincblende. Aplicamos o método do \"folding down\'\' ao hamiltoneano de Kane isolando o setor correspondente à banda de condução. Escrevemos dessa forma um hamiltoneano efetivo para a banda de condução no contexto de um poço quântico com uma barreira. Através da projeção desse hamiltoneano nos dois primeiros estados da parte orbital verifica-se o surgimento de um acoplamento inter-subbanda. Finalmente escrevemos o hamiltoneano efetivo 4x4 que descreve as duas primeiras subbandas de um poço quântico e obtivemos seus autoestados e autoenergias. Finalmente fizemos o cálculo autoconsistente das funções de onda e energias de um gás de elétrons em poços quânticos simples e duplos através da aproximação de Hartree e a partir desses resultados determinamos o valor da constante de acoplamento Rashba e da nova constante inter-subbanda. Entre os resultados obtidos destacam-se o controle elétrico da constante de acoplamento inter-subbanda através de um eletrodo externo e um efeito de renormalização da massa efetiva que pode chegar até 5% em algumas estruturas. / In this work we present the self-consistent determination of the spin-orbit coupling constant in heterostructure with two subbands.As recently proposed, the effective hamiltonian for the conduction band in the effective mass approximation contains an inter-subband spin-orbit coupling which is non-zero even for symmetric heterostructures. We present the theoretical derivation which leads to this proposal and show a selfconsistent determination of the coupling constant. We also compare the magnitude of the new coupling constant with the usual Rashba coupling. Starting with a discussion of the k.p method and the Envelope Function Approximation (EFA) we show the derivation of the 8x8 Kane model for semiconductors with zincblende structure. We then apply the \"folding down\'\' method, isolating the conduction band sector of the EFA hamiltonian. By projecting this hamiltonian in the first two states of the orbital part, we find an effective 4x4 hamiltonian that contains an inter-subband spin orbit coupling. The eingenvalues and eigenvectors of this hamiltonian are shown and, specializing the model for single and double quantum wells, we self-consistently determine the inter-subband and Rashba coupling constants in the Hartree approximation. The results indicate the possibility of electrical control of the coupling constant and show an effective mass renormalization effect that can be up to 5% in some cases.