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Systematic measurements of the magnetic moment in dependence on temperature and magnetic field of hexagonal 6H-BaTiO3 + 0.04 BaO + x/2 Fe 2 O 3 (0.005 x 0.05) ceramics were performed to study the influence of Fe ions on the magnetic properties. While the samples show Curie–Weiss paramagnetism for Fe concentrations 1.0 mol%, antiferromagnetic interactions become manifest for 2.0 and 5.0 mol% iron. With increasing Fe content the antiferromagnetic interaction, which is assumed to be caused by a superexchange mechanism Fe 3+ Ti(1) − O 2− O(2) − Fe3+ Ti(2) , becomes stronger. At external magnetic fields smaller than 1 T a further, ferromagnetic interaction between Fe 3+ ions is detected below 200 K. The interactions between Fe 3+ ions in the samples with 2.0 and 5.0 mol% iron are also manifest in the EPR spectra by numerous lines with low intensity. Q-band EPR investigations of 5.0 mol% Fe doped single crystals confirm the existence of only one type of Fe 3+ –V O associates in the samples.

Microwave materials have been widely used in a variety of applications ranging from communication devices to military satellite services, and the study of materials properties at microwave frequencies and the development of functional microwave materials have always been among the most active areas in solid-state physics, materials science, and electrical and electronic engineering. In recent years, the increasing requirements for the development of high speed, high frequency circuits and systems require complete understanding of the properties of materials function at microwave frequencies. Ferroelectric materials usually have high dielectric constants, and their dielectric properties are temperature and electric field dependent. The change in permittivity as a function of electric field is the key to a wide range of applications. Ferroelectric materials can be used in fabrication capacitors for electronic industry because of their high dielectric constants, and this is important in the trend toward miniaturization and high functionality of electronic products. The simple tunable passive component based on ferroelectric films is a varactor which can be made as a planar structure, and electrically tunable microwave integrated circuits using ferroelectric thin films can be developed. Therefore, it is very important to characterize the dielectric constant and tunability of ferroelectric thin films. This thesis shows experimental results for growth, crystalline properties and microwave characterization of Na0.5K0.5NbO3 (NKN), AgTa0.5Nb0.5O3 (ATN), Ba0.5Sr0.5TiO3 (BST) as well as AgTaO3 (ATO), AgNbO3 (ANO) thin films. The films were grown by Pulsed Laser Deposition (PLD) and rf-magnetron sputtering of a stoichiometric, high density, ceramic NKN, ATN, BST target onto single crystal LaAlO3(LAO), Al2O3 (sapphire), and Nd:YAlO3, and amorphous glass substrates. By x-ray diffractometry, NKN, ATN, BST films on LAO substrates were found to grow epitaxially, whereas films on r-cut sapphire substrates were found to be preferentially (00l) oriented. Coplanar waveguide interdigital capacitor (CPWIDC) structures were fabricated by standard photolithography processing and metal lift-off technique. Microwave properties of the NKN/Sapphire and ATN/Sapphire with CPW structures were characterized using on-wafer microwave measurement technique. Measurement setup is composed of network analyzer, probe station, and microwave G-S-G probes. External electric field through the connection between network analyzer and power supply was applied to measure voltage tunability. Measured S-parameter were used for the calculation of capacitance, loss tanδ, tunability and K-factor. The NKN films interdigital capacitors with 2 μm finger gap on Nd:YAlO3 showed superior performance compared to ATN in the microwave range from 1 to 40 GHz. Within this range, the voltage tunability (40V, 200 kV/cm) was about 29%, loss tangent ∼ 0.13, K-factor = tunability/tanδ from 152% @ 10GHz to 46% @ 40GHz. The microwave performance of ATN film CPWIDC with 2 μm finger gap on sapphire substrate in the microwave range from 1 to 40 GHz showed that frequency dispersion is about 4.3%, voltage tunability was 4.7% @ 20GHz and 200 kV/cm, loss tangent ∼ 0.068 @ 20GHz, K-factor = tunability/tanδ is ranged from 124% @ 10GHz to 35% @ 40GHz. The BST films CPWIDC with 2μmfinger gap on Al2O3 substrate showed frequency dispersion of capacitance in the microwave range from 1 to 40 GHz about 17%, voltage tunability = 1 - C(40V)/C(0) ∼ 22.2%, loss tangent ∼ 0.137 @ 20GHz, and K-factor = tunability/tanδ from 281% @ 10GHz to 95% @ 40GHz. / QC 20101207

Barium Titanate (BaTiO3 or BTO) has attracted an ever increasing research interest because of its wide range of potential applications. Nano-sized or nanostructured BTO has found applications in new, useful smart devices, such as sensors and piezoelectric devices. Not only limited to one material, multi-layers or multi-phases can lead to multifunctional applications; for example, nanocomposites can be fabricated with ferrite or metal phase with BTO. In this study, I synthesized various BTO-ferrites, ranging from nanoparticles, nanowires to thin films. BTO-ferrite coaxial nanotubes, BTO-ferrite self-assemble thin films, and BTO single phase films were prepared by pulsed laser deposition (PLD) and sol-gel process. BTO-ferrite nanocomposites were grown by solid state reaction. Furthermore, BTO-metal nanostructures were also synthesized by solid state reaction under hydrogen gas which gave us a great inspiration to fabricate metal-ceramic composites. To understand the relationship between metal and BTO ceramic phase, I also deposited BTO film on Au buffered substrates. A metal layer can affect the grain size and orientation in BTO film which can further help us to control the distribution of dielectric properties of BTO films. After obtaining different nanomaterials, I am interested in the applications of these materials. Recently, many interesting electric devices are developed based on nanotechnology, e.g.: memristor. Memristor is a resistor with memory, which is very important in the computer memory. I believe these newly-synthesized BTO based nanostructures are useful for development of memristor, sensors and other devices to fit increasing needs. / Ph. D.

Integration of complex optical functionalities with high performance will lead to a huge development in the field of nanophotonics for a broad range of applications. Silicon photonics is currently the leading technology for the implementation of low-cost photonic integrated devices. The great potential of this technology relies on its compatibility with the mature silicon integrated circuits manufacturing based on complementary metal-oxide semiconductor (CMOS) processes widely used in microelectronic industry and the availability of high quality silicon-on-insulator wafers, an ideal platform for creating planar waveguide circuits that offers strong optical confinement due to the high index contrast between silicon (n=3.45) and silicon dioxide (n=1.45). In order to keep improving the performance of photonic devices on silicon, the integration of CMOS compatible materials with unique properties shows up as an excellent opportunity to overcome the current limitations in silicon while offering unprecedented and novel capabilities to the silicon platform. In this way, barium titantate (BaTiO3) stands out as one of the most disruptive candidates. The work developed in this thesis is essentially focused on the design, fabrication and characterization of an electro-optic modulator based on a hybrid BaTiO3 on silicon structure for the implementation of high performance electro-optic functionalities with beyond state-of-the art performance that currently cannot be afforded in silicon photonics technology. / La integración de funcionalidades ópticas con alto rendimiento llevará a un gran desarrollo en el campo de la nanofotónica para un amplio abanico de aplicaciones. Actualmente, la fotónica de silicio es la tecnología líder para la implementación de dispositivos fotónicos integrados a bajo coste. El gran potencial de esta tecnología reside en su compatibilidad con las maduras técnicas de fabricación de circuitos integrados de silicio basadas en los procesos "complementary metal-oxide semiconductor" (CMOS) ampliamente utilizados en la industria microelectrónica y la disponibilidad de disponer de obleas de silicio sobre aislante de alta calidad, una plataforma ideal para crear circuitos de guía de ondas planas que ofrecen un fuerte confinamiento óptico debido al alto contraste índices entre el silicio (n=3,45) y el dióxido de silicio (n=1,45). Para poder mejorar el rendimiento de dispositivos fotónicos en silicio, la integración de materiales con propiedades excepcionales y compatibles con los procesos de fabricación CMOS surge como una excelente oportunidad para superar las actuales limitaciones de la tecnología de silicio al mismo tiempo que ofrece oportunidades novedosas y sin precedentes en la plataforma de silicio. En este sentido, el material titanato de bario (BaTiO3) se postula como uno de los candidatos más prometedores. El trabajo desarrollado en esta tesis está esencialmente enfocado en el diseño, fabricación y caracterización de un modulador electro-óptico basado en una estructura híbrida de BaTiO3 en silicio para la implementación de funcionalidades electro-ópticas de alto rendimiento más allá del estado del arte de las que no se puede disponer actualmente en la tecnología de fotónica de silicio. / La integració de funcionalitats òptiques amb alt rendiment portarà a un gran desenvolupament en el camp de la nanofotònica per a un ampli ventall d'aplicacions. Actualment, la fotònica de silici és la tecnologia capdavantera per a la implementació de dispositius fotònics integrats a baix cost. El gran potencial d'aquesta tecnologia resideix en la seva compatibilitat amb les madures tècniques de fabricació de circuits integrats de silici basades en els processos "complementary metal-oxide semiconductor" (CMOS) amplament utilitzats en la indústria microelectrònica i la disponibilitat de disposar d'hòsties de silici sobre aïllant d'alta qualitat, una plataforma ideal per crear circuits de guia d'ones planes que ofereixen un fort confinament òptic a causa de l'alt contrast d'índexs entre el silici (n=3,45) i el diòxid de silici (n=1,45). Per poder millorar el rendiment de dispositius fotònics en silici, la integració de materials amb propietats excepcionals i compatibles amb els processos de fabricació CMOS sorgeix com una excel·lent oportunitat per superar les actuals limitacions de la tecnologia de silici al mateix temps que ofereix oportunitats noves i sense precedents en la plataforma de silici. En aquest sentit, el material titanat de bari (BaTiO3) es postula com un dels candidats més prometedors. El treball desenvolupat en aquesta tesi està essencialment enfocat en el disseny, fabricació i caracterització d'un modulador electro-òptic basat en una estructura híbrida de BaTiO3 en silici per a la implementació de funcionalitats electro-òptiques d'alt rendiment més enllà de l'estat de l'art de les quals no es pot disposar actualment a la tecnologia de fotònica de silici. / Castera Molada, P. (2017). Development of new photonic devices based on barium titanate in silicon [Tesis doctoral]. Universitat Politècnica de València. https://doi.org/10.4995/Thesis/10251/86197

京都大学 / 新制・課程博士 / 博士(人間・環境学) / 甲第25364号 / 人博第1106号 / 京都大学大学院人間・環境学研究科相関環境学専攻 / (主査)教授 吉田 寿雄, 教授 田部 勢津久, 教授 中村 敏浩, 教授 田中 庸裕 / 学位規則第4条第1項該当 / Doctor of Human and Environmental Studies / Kyoto University / DFAM

Ferroelectric materials are characterized by a reversible spontaneous polarization in the absence of an electric field. The characteristic polarization response of a ferroelectric material to an applied electric field enables a binary state device in the form of a thin film ferroelectric capacitor that can be used to store digital information. This provides opportunities for the development of high speed, low cost and low power, nonvolatile memory devices. The development of commercial ferroelectric memory devices has however been hampered by (a) several reliability issues including fatigue, leakage current, aging, time dependent dielectric breakdown, retention and imprint and (b) processing problems including the development of a low temperature thin film deposition process and the development of a patterning technology. Lead zirconate titanate (PZT) is now widely considered as the most promising material for ferroelectric memory applications as a result of its excellent ferroelectric properties and wide operating temperature range. However, it is commonly found that metal electroded-PZT capacitors (e.g., Pt/PZT/Pt) show a loss of switchable polarization with cumulative switching cycles. This phenomenon is known as fatigue and is the one of the critical problems affecting the lifetime of ferroelectric memories. This research is primarily focused on the problem of fatigue. On the basis of a quantitative model, various guidelines to minimize the degradation problem have been derived. The model attributes fatigue to domain pinning by space charge that is caused by defect (e.g. oxygen vacancy) entrapment at various interface sites such as electrode-ferroelectric interface, domain boundaries and grain boundaries. Two different approaches to minimize the problem have been outlined : (a) control of the defect density and (b) control of the interface state. The control of interface state was achieved by replacing the metal electrodes with conducting oxide electrodes such as RuO₂. The oxide electrode/PZT capacitors were characterized for their diffusion barrier properties, perovskite phase formation, interface nature and ferroelectric properties. The results indicate that these oxide electroded PZT films are good candidates for nonvolatile memory applications. However, the leakage current levels at the operating voltages are far higher than the metal counterparts. Simultaneous minimization of fatigue and leakage current in PZT films was achieved by using multilayer metal/conducting oxide electrodes (e.g., Pt/RuO₂). The control of defect density was attained by (a) donor doping to compensate for the oxygen vacancies (e.g, Nb doping in PZT) and (b) utilizing ferroelectric materials that have a low intrinsic defect concentration. As a result of the latter approach, novel ferroelectric materials belonging to the layer-structure family of oxides have been identified as excellent candidates for fatigue free nonvolatile memory applications. Laser ablated SrBi₂(Ta_xNb_{1 - x})₂O₉ (0<x<1) films showed very good hysteresis characteristics (remnant polarization value of 11 µC/cm², coercive field of 60 kV/cm), no fatigue was observed up to 10⁹ switching cycles and very low leakage current densities. Furthermore, the formation and properties of these films were characterized. It was found grain size and orientation played a major role in determining the properties of these films. C-axis oriented films were found to exhibit almost no polarization. An additional objective of this research was to identify an etching technology (process integration issue) for patterning of the ferroelectric capacitors. The etching process should provide high etch rates, good etch anisotropy, high etch selectivity and minimal post etch residues. It has been shown that a reactive ion etch process with CCl₂F₂/O₂ as the etch gas mixture can meet these requirements. A detailed process study has been conducted to determine the mechanism of etching. / Ph. D.

O aumento da longevidade da população mundial vem acompanhado do aumento da incidência de doenças crônicas. Várias são as doenças que podem acometer esta população e entre estas, a osteoporose, que compromete a resistência e qualidade do tecido ósseo, predispondo a fraturas. Além disso, a osteoporose pode dificultar a reparação óssea. Uma técnica importante e que tem por objetivo a neoformação óssea é a regeneração óssea guiada (ROG), que utiliza uma membrana que atua como uma barreira mecânica, permitindo a criação de um espaço protegido em torno do defeito ósseo. Embora a membrana de politetrafluoretileno (PTFE) seja uma das mais utilizadas na ROG, novas membranas têm sido desenvolvidas dentre elas a membrana obtida pela associação do polímero de poli(vinilideno-trifluoretileno) e da cerâmica de titanato de bário (P(VDF-TrFE)/BT). Estudos in vitro demonstraram resultados favoráveis à membrana de P(VDF-TrFE)/BT. Desta forma, o objetivo deste estudo foi avaliar in vivo, o efeito da membrana de poli(vinilidenotrifluoretileno)/titanato de bário (P(VDF-TrFE)/BT), e como controle a de PTFE no reparo ósseo em ratas com modelo experimental para a osteoporose. Foram utilizados 30 animais, sendo 5 pertencentes ao grupo controle - Grupo 1 (G1) e 25 que foram ovariectomizados bilateralmente (OVX). Após 150 dias foram confeccionados defeitos ósseos (5 mm) na calvária e os animais OVX foram distribuídos em três grupos com relação à utilização ou não de membranas nos defeitos ósseos: Grupo 2 - nenhum tipo de membrana; Grupo 3 - membrana de PTFE e Grupo 4 - membrana de P(VDF-TrFE)/BT. Após 4 semanas, os animais foram eutanasiados e as calvárias foram coletadas para as análises histológica, histomorfométrica por micro-CT e de expressão gênica por PCR em tempo real. A análise histomorfométrica mostrou que os animais que receberam a membrana de P(VDF-TrFE)/BT apresentaram parâmetros morfométricos semelhantes ou até melhores quando comparados com os animais que receberam a membrana de PTFE. A comparação dos grupos que receberam as membranas mostrou para o grupo P(VDF-TrFE)/BT uma menor expressão para os genes RUNX2, BSP, OPN, OSX e RANKL; uma expressão semelhante para os genes ALP, OC, RANK e CTSK e uma maior expressão dos genes OPG, CALCR e MMP9. Estes resultados evidenciam que a membrana de P(VDF-TrFE)/BT pode ser considerada um biomaterial promissor para a reparação óssea em condições de osteoporose / The worldwide population age is increasing accomplished by chronic disease. The most common disease which involves the population is the osteoporosis. The bone resistance and quality of bone matrix are compromised and the fractures risks are higher. Nonetheless, the osteoporosis can avoid the bone healing. The important technique to achieve the bone neoformation is the Bone Guided Regeneration (BGR), which used a membrane as mechanic barrier to allow the new gap protection around the bone defect. Although the politetrafluoetilene (PTFE) is the most used in BGR, newest membranes have been developed as the polyvinylidene-trifluoroethylene polymer and barium titanate ceramics (P(VDF-TrFE)/BT). In vitro assays showed favorable results to P(VDF-TrFE)/BT membrane. The aim of the study was to evaluate the poly(vinylidene fluoride-trifluoroethylene)/barium titanate (P(VDF-TrFE)/BT) effects, and the PTFE has been used as control on the bone repair in the osteoporosis experimental rats model. It was used 30 animals, 5 on the control group- Group 1 (G1) and 25 were ovariectomized bilaterally (OVX). Bone gaps were done 5mm size on the rats calvaria´s and the (OVX) were housed in three different groups concerned by membranes applied or not at the bone gap. Group 2 no membrane applied; Group 3 PTFE membrane and Group 4 P(VDF-TrFE)/BT membrane. Four weeks later, the animals were euthanized and the calvarias were collected to the histological analysis, histomorphometric assays by micro CT and the gene expression by the real time PCR. The histomorphometric analysis showed that the animals which received P(VDF-TrFE)/BT membrane presented similar morphometric parameters better than PTFE. The P(VDF-TrFE)/BT showed a minor expression to RUNX2, BSP, OPN, OSX e RANKL genes; the similar were to RANK e CTSK and the higher expression were to OPG, CALCR e MMP9. These results evidence that the P(VDF-TrFE)/BT could be used as promising biomaterial to bone healing under osteoporosis

Composições cerâmicas de CaxSr1-xTi1-yFeyO3-&delta;, x = 0, 0,5 e 1,0, y = 0 e 0,35, foram preparadas por meio de síntese reativa de CaCO3, SrCO3, TiO2 e Fe2O3 e pela técnica dos precursores poliméricos. Os pós-cerâmicos foram avaliados por meio de análise térmica (termogravimétrica e térmica diferencial), difração de raios X e microscopia eletrônica de varredura. Compactos cerâmicos sinterizados foram analisados por difração de raios X, microscopia eletrônica de varredura, microscopia de varredura por sonda e espectroscopia de impedância. A força eletromotriz gerada entre duas faces paralelas de amostras cilíndricas foi monitorada na faixa de temperatura 600 - 1100 oC para pressão parcial de oxigênio de ~50 ppm, utilizando-se uma bomba eletroquímica de oxigênio com transdutores de zircônia estabilizada com ítria. Foram refinadas, por meio de análise de Rietveld as estruturas cristalinas determinadas na análise por difração de raios X: perovskita cúbica (x = 0) e perovskita ortorrômbica (x 0). A condutividade elétrica foi analisada por medidas de espectroscopia de impedância na faixa de freqüências 5 Hz-13 MHz da temperatura ambiente até ~200 C. A deconvolução dos diagramas de impedância [-Z\"() x Z\'()] na faixa de temperaturas 300 < T(K) < 500 mostra dois semicírculos atribuídos às contribuições intragranular (grãos) e intergranular (contornos de grão) à resistividade elétrica. Os compactos sinterizado utilizando pós preparados pela síntese de estado sólido apresentam valores de resistividade intergranular e intragranular maiores que os compactos preparados com pós obtidos pela síntese química. O sinal elétrico (força eletromotriz) gerado sob exposição a oxigênio mostra que esses compostos podem ser utilizados em dispositivos sensores de oxigênio entre 600 e 1100C. Análises topográficas em microscópio de varredura por sonda em superfícies polidas e atacadas termicamente mostram detalhes morfológicos dos grãos, permitindo concluir que compactos sinterizados preparados com pós obtidos pela rota química são menos porosos que os preparados com pós obtidos pela rota convencional de síntese de estado sólido. Estes resultados estão de acordo com os resultados de medidas de espectroscopia de impedância. / CaxSr1-xTi1-yFeyO3-&delta;, x = 0, 0.5 and 1.0, y = 0 and 0.35, ceramic compounds were synthesized by reactive solid state synthesis of CaCO3, SrCO3, TiO2 and Fe2O3, and by the polymeric precursor technique. The ceramic powders were evaluated by thermogravimetry and differential thermal analysis, X-ray diffraction and scanning electron microscopy. Sintered ceramic pellets were analyzed by X-ray diffraction, scanning electron microscopy, scanning probe microscopy and impedance spectroscopy. The electromotive force resulting from the exposing the pellets to partial pressure de oxygen in the ~50 ppm in the 600-1100 oC range was monitored using an experimental setup consisting of an oxygen electrochemical pump with yttria-stabilized zirconia transducer and sensor. Rietveld analysis of the X-ray data allowed for determining the crystalline structures: cubic perovskite (y = 0) and orthorhombic perovskite (y 0). The electrical conductivity was determined by the two probe impedance spectroscopy measurements in the 5 Hz-13 MHz frequency range from room temperature to approximately 200 C. The deconvolution of the [-Z\"() x Z\'()] impedance diagrams in the 300 < T(K) < 500 range shows two semicircles due to intragranular (bulk) and intergranular (grain boundary) contributions to the electrical resistivity. Sintered pellets using powders prepared by the ceramic route present higher inter- and intragranular resistivity values than pellets prepared with chemically synthesized powders. The emf signal under exposure oxygen shows that these compounds may be used in oxygen sensing devices in the 600 - 1100 C range. Scanning probe microscopy topographic analysis of the polished and thermally etched surfaces of the pellets gave details of grain morphology, showing that pellets prepared with powders synthesized by the chemical route are less porous than the ones obtained by the ceramic route. These results are in agreement with the impedance spectroscopy results.