Dans le cadre du développement de technologies innovantes dans le domaine des accumulateurs Li-ion à charge rapide, typiquement inférieure à 5 minutes, des séparateurs commerciaux ont été caractérisés par différentes méthodes physico-chimiques et électrochimiques afin de corréler leurs structures poreuses aux performances en charge rapide enregistrées. L'architecture d'électrode choisie utilise l'oxyde de titane Li4Ti5O12 à l'électrode négative et le spinelle LiMn2O4 à la positive.<br />Afin d'augmenter les capacités chargées par rapport aux séparateurs commerciaux, des membranes à squelette poly(fluorure de vinylidène) et poly(fluorure de vinylidène) co poly(hexafluoropropylène) ont été élaborées par inversion de phase en utilisant la méthodologie des plans d'expériences. Les processus de formation ont été explicités à partir de la thermodynamique des systèmes ternaires polymère/solvant/non-solvant. Les membranes obtenues ont permis de gagner 20% de capacité chargée en 3 minutes par rapport aux séparateurs commerciaux.<br />Enfin, les limitations en charge rapide dues aux séparateurs ont été étudiées et identifiées à l'aide d'un code de modélisation d'accumulateurs Li-ion.

Microwave materials have been widely used in a variety of applications ranging from communication devices to military satellite services, and the study of materials properties at microwave frequencies and the development of functional microwave materials have always been among the most active areas in solid-state physics, materials science, electrical and electronic engineering. In recent years, the increasing requirements for the development of high speed, high frequency circuits and systems require complete understanding of the properties of materials function at microwave frequencies. Ferroelectric materials usually have high dielectric constant, and their dielectric properties are temperature and electric field dependent. The change in permittivity as a function of electric field is the key to a wide range of applications. Ferroelectric materials can be used to fabricate capacitors for electronic industry because of their high dielectric constant, and this is important in the trend toward miniaturization and high functionality of electronic products. The simple tunable passive component based on ferroelectric films is a varactor which can be made as a planar structure and used for electrically tunable microwave integrated circuits. It is an important task to sinter highly tunable and low loss ferroelectrics, fabricate and test the properties of microwave ferroelectric components. This thesis shows experimental results on growth, crystalline and microwave properties of Na0.5K0.5NbO3 (NKN), AgTa0.5Nb0.5O3 (ATN), Ba0.5Sr0.5TiO3 (BST) as well as AgTaO3 (ATO), and AgNbO3 (ANO) thin films. The films were grown by Pulsed Laser Deposition (PLD) and rf-magnetron sputtering techniques from stoichiometric high density ceramic NKN, ATN, ATO, ANO and BST targets onto LaAlO3 (LAO), Al2O3 (r-cut sapphire), Nd:YAlO3 single crystals and amorphous glass substrates. Advanced X-ray diffraction examinations showed NKN, ATN, BST films on LAO substrates grow epitaxially, whereas films on r-cut sapphire were found to be preferentially (00l) oriented. Coplanar waveguide 2 µm finger gap interdigital capacitor (CPWIDC) structures were fabricated by photolithography process and metal lift-off technique. On-wafer tests up to 40 GHz were performed to characterize microwave properties of the ferromagnetic film CPWIDC devices. The measurement setup is composed of network analyzer, probe station, and microwave G-S-G probes. External electric field was applied to planar capacitors to measure tunability. Original de-embedding technique has been developed to calculate capacitance, loss tan δ, and tunability of varactors from the measured S-parameters. NKN film interdigital capacitors on Nd:YAlO3 showed superior performance compared to ATN in the microwave range from 1 to 40 GHz. Within this range, the voltage tunability (40V, 200 kV/cm) was about 29%, loss tangent ~ 0.13, K-factor = tunability/tan δ from 152% @ 10GHz to 46% @ 40GHz. The ATN/sapphire CPWIDCs showed the lowest dispersion ~ 4.3% in whole frequency range from 1 to 40 GHz, voltage tunability 4.7% @ 20GHz and 200 kV/cm, lowest loss tangent ~ 0.068 @ 20GHz, K-factor = tunability/tan δ ranged from 124% @ 10GHz to 35% @ 40GHz. BST film CPWIDCs on sapphire showed frequency about 17%, the highest voltage tunability ~ 22.2%, loss tangent ~ 0.137 @ 20GHz, and K-factor = 281% @ 10GHz to 95% @ 40GHz. / QC 20100906

The generation of nanostructured assemblies with complex (three-dimensional, 3D) self-assembled morphologies and with complex (multicomponent) tailorable inorganic compositions is of considerable technological and scientific interest. This research demonstrates self-assembled 3D organic templates of biogenic origin can be converted into replicas comprised of numerous other functional nanocrystalline inorganic materials. Nature provides a spectacular variety of biologically-assembled 3D organic structures with intricate, hierarchical (macro-to-micro-to-nanoscale) morphologies. Morphology-preserving chemical conversion of such readily available, structurally complex templates will provide a framework for chemical conversion of synthetic organic templates and, potentially, production of organic/inorganic composites. Four research thrusts are detailed in this dissertation. First, chemical conversion of a nanostructured bioorganic template into a multicomponent oxide compound (tetragonal BaTiO₃ via layer-by-layer surface sol-gel coating and subsequent morphology-preserving microwave hydrothermal processing was demonstrated. Second, photoluminescence was imparted to bioorganic template structures through morphology-preserving chemical conversion to exhibit both the dramatic change in properties such processing can provide, and the potential utility of chemically transformed templates in anti-counterfeiting / authentication applications. Third, the reaction mechanism(s) for morphology-preserving microwave hydrothermal conversion of TiO₂ to BaTiO₃, were studied with the aid of Au inert markers on single crystal rutile TiO₂. Finally, constructive coating techniques (SSG) and moderate temperature (< 500C) heat treatments were utilized to modify and replicate structural color and were coupled with deconstructive focused ion beam microsurgery to prepare samples for microscale structure/property interrogation. Specifically, the effects of coating thickness and coating composition on reflection spectra of structurally colored templates were examined. Also, the effects of the replacement of natural material with higher index of refraction inorganic materials on optical properties were studied. The three processing research thrusts constituting chapters 1, 2 and 4 take advantage of moderate temperature processing to ensure nanocrystalline materials, either for shape preservation or to prevent scattering in optical applications. The research thrust presented in chapter 3 examines hydrothermal conversion of TiO₂ to BaTiO₃, not only to identify the reaction mechanism(s) involved in hydrothermal conversion under morphology-preserving conditions, but also to introduce inert marker experiments to the field of microwave hydrothermal processing.

Ce travail a été consacré à l'étude de deux transformations: d'une part l'évolution texturale d'une poudre de titanate de baryum, d'autre part une voie de synthèse de cet oxyde à partir de nitrate de baryum et de dioxyde de titane à l'état solide. Nous avons montré que la vitesse absolue de chacune de ces transformations peut être reliée à la vitesse spécifique du phénomène, calculée à l'aide d'une modélisation physico-chimique et qui s'exprime en fonction des contraintes expérimentales (pressions partielles de gaz, rapport Ba/Ti, ... ). Une étude cinétique de l'influence de ces contraintes a donc été réalisée pour chaque transformation. Dans le cas du grossissement de grains, cette étude a révélé un effet accélérateur de la vapeur d'eau et du rapport Balfi sur la chute de surface spécifique du titanate de baryum. En ce qui concerne la réaction de synthèse, l'étude expérimentale (par thermogravimétrie) a mis en évidence un effet très fortement ralentisseur du monoxyde d'azote et un effet ralentisseur moindre de l'oxygène. Des modèles physico-chimiques ont été proposés, qui ont conduit à l'expression des vitesses théoriques pour chaque transformation, et ont permis de rendre compte des résultats expérimentaux, qualitativement dans le cas de la synthèse, et de manière quantitative pour le grossissement de grains. Deux voies parallèles de transport de matière ont d'ailleurs été mises en évidence dans ce dernier cas, l'une faisant intervenir un effet catalytique de la vapeur d'eau, l'autre se déroulant par l'intermédiaire des défauts intrinsèques seulement (les lacunes d'oxygène).

This paper reports a reciprocal Mach-Zehnder interferometer in a dual Sagnac ring configuration, and one of two arms in Mach-Zehnder interferometer is used for underwater optic fiber hydrophone. Two Mach-Zehnder interferometers operated in opposite sense are simultaneously induced from the underwater acoustic wave and the PZT phase modulation. Thus, at the output, four interferometric beams occur such that the intensity of interferometric beams will enhance. In general, one stage of a double Mach-Zehnder interferometer is just used as a sensor, another one for compensation. Specially, this paper presents two stages of a double Mach-Zehnder interferometer sense the measurand at the same time due to the topology structure of Sagnac ring pairs. In the other words, the characteristic is to win the affection of two beauties at the same time. Two rings in the same direction make a Mach-Zehnder interferometer. Besides, the inner ring in the clockwise direction and the outer one in the counterclockwise direction also make a Mach-Zehnder interferometer. So as to the unbalanced arms of the Mach-Zehnder interferometer, the underwater acoustic wave induces the light beam phase difference in optic fiber hydrophone interrogator to demodulate the acoustic wave signal by PGC circuit.

The present study describes the growth and characterization of pulsed laser ablated Bao.sSro.sTiOs (BST) thin films. Emphasis has been laid on the study of a plausible correlation between structure and property in order to optimize the processing parameters suitably for required application. An attempt has been made to understand the basic properties such as, origin of dielectric response, charge transfer under low and high-applied electric fields across the BST capacitor and finally the dielectric breakdown process. Chapter 1 gives a brief introduction on the application of ferroelectric thin films in microelectronic industry and its growth techniques. It also addresses the present issues involved in the introduction of BST as a capacitor material for high-density dynamic random access memories. Chapter 2 outlines the motivation for the present study and briefly outlines the research work involved. Chapter 3 describes the experimental procedure involved in the growth and characterization of BST thin films using pulsed laser ablation technique. Details include the setup design for PLD growth, material synthesis for the ceramic targets, deposition conditions used for thin film growth and basic characterizations methods used for study of the grown films. Chapter 4 describes the effect of systematic variation of deposition parameters on the physical and electrical properties of the grown BST films. The variation in processing conditions has been found to directly affect the film crystallinity, structure and morphology. The change observed in these physical properties may also be correlated to the observed electrical properties. This chapter summarizes the optimal deposition conditions required for growing BST thin films using a pulsed laser ablation technique. Microstructure of BST films has been categorized into two types: (a) Type I structure, with multi-grains through the film thickness, for amorphous as-grown films after high temperature annealing (exsitu crystallized), and (b) columnar structure (Type II) films, which were as-grown well-crystallized films, deposited at high temperatures. The ac electrical properties have been reviewed in detail in Chapter 5. Type I films showed a relatively lower value of dielectric constant (e ~ 426) than Type II films with dielectric constant around 567. The dissipation factors were around 0.02 and 0.01 for Type I and Type II films respectively. The dispersion in the frequency domain characteristics has been quantitatively explained using Jonscher's theory. Complex impedance spectroscopy employed showed significant grain boundary response in the case of multi-grained Type I films while negligible contribution from grain boundaries has been obtained in the case of columnar grained Type II BST films. The average relaxation time r obtained from the complex impedance plane plots show almost three orders higher values for Type I films. The obtained results suggest that in multi-grained samples, grain boundary play a major role in electrical properties. This has been explained in accordance to a model proposed on the basis of depleted grains in the case of Type I films where the grain sizes are smaller than the grain boundary depletion width. Chapter 6 describes the dc leakage properties of the grown BST thin films and the influence of microstructure on the leakage properties. It was evident from the analysis of the graph of leakage current against measurement temperature, that, the observed leakage behavior in BST films, can not be attributed to a single charge transport mechanism. For Type I films, the Arrhenius plot of the leakage current density with 1000/T exhibits different regions with activation energy values in the range of 0.5 and 2.73 for low fields (2.5kV/cm). The activation energy changes over to 1.28 eV at high fields (170 kV/cm). The obtained values agree well with that obtained from the ac measurements, thus implying a similarity in the origin of the transport process. The activation energy value in the range of 0.5 eV is attributed to the electrode/film Schottky barrier, while the value in the range of 2.73 eV is due to deep trap levels originating from Ti+3 centers. The value in the range of 1.28 eV has been attributed to oxygen vacancy motion. Similar results have been obtained from the Arrhenius plot of the leakage current for Type II films. In this case, only two different activation energy values can be identified in the measured temperature and applied electric field range. At low fields the activation energy value was around 0.38 eV while at high fields the value was around 1.06 eV. These values have been identified to be originating from the electrode/film Schottky barrier and oxygen vacancy motion respectively. Thus a complete picture of the charge transport process in the case of BST thin film may be summarized as comprising of both electronic motion as well as contribution from oxygen vacancy motion. The effect of electrical stress on the capacitance-voltage (C-V) and the leakage current has been analyzed in Chapter 7. From the change in the zero bias capacitance after repeated electron injection through the films the values of the electronic capture cross-section and the total trap density for Type I and II films have been estimated. The results showed higher values for Type I film in comparison to Type II films. The difference has been attributed to the presence of grain boundaries and a different interface in the case of Type I films when compared to Type II films where the absence of grain boundaries is reflected in the columnar microstructure. A study of the time-dependent-dielectric-breakdown (TDDB) characteristics under high fields for Type I and Type II films showed higher endurance for Type I film. On the other hand space-charge-transient characteristics have been observed in the case of Type II films at elevated temperature of measurement. Mobility and activation energy values extracted from the transient characteristics are found to be in the range of 1 x 10~12 cm2 /V-sec and 0.73 eV respectively, suggesting a very slow charge transport process, which has been attributed to the motion of oxygen vacancies. An overall effect of electrical stress suggested that oxygen vacancy motion can be related to the observed resistance degradation and TDDB, which has been further enhanced by the combination of high temperature and high electric fields. Chapter 8 deals with the effect of intentional doping in the BST films. The doping includes Al at the Ti-site, Nb in the Ti-site and La at the Ba/Sr-site. The effect of doping was observed both on the structure and electrical properties of the BST films. Acceptor doping of 0.1 atomic 7c Al was found to decrease the dielectric constant as well as the leakage current. For higher concentration of acceptor-dopant, the leakage current was found to increase while showing space-charge-transient in the TDDB characteristics, again suggesting the effect of increased concentration of oxygen vacancies. Donor doping using 2 atomic % La and Xb significantly improved the leakage as well as the TDDB characteristics by reducing the concentration of oxygen vacancies. A further procedure using graded donor doping in the BST films exhibits even better leakage and TDDB properties. An unconventional, graded doping of donor cations has been carried out to observe the impact on leakage behavior, in particular. The leakage current measured for a graded La-doped BST film show almost six orders of lower leakage current in comparison to undoped BST films, while endurance towards breakdown has been observed to increase many-fold. Chapter 9 highlights the main findings of the work reported in this thesis and lists suggestions for future work, to explore new vistas ahead.

Cette étude est consacrée à la résistance mécanique des interfaces métal/oxyde. La céramique utilisée est un titanate de baryum (BaTiO3) commercial. Les matériaux métalliques sont des pâtes d'argent et de nickel. Les couches métalliques ont été obtenues par sérigraphie. Nous avons préparé des échantillons comprenant des couches d'argent et de nickel frittées à différentes températures, sur des substrats de BaTiO3 de diverses rugosités, avec des géométries adaptées à des essais de gonflement-décollement et d'indentation.<br />La technique de gonflement-décollement permet une mesure quantitative de l'adhérence interfaciale grâce à la détermination de l'énergie de propagation Gci d'une fissure interfaciale. Nous proposons une méthode simple pour prendre en compte la plasticité généralisée de la couche métallique d'argent lors du décollement. L'adhérence Ag/BaTiO3 varie entre 4 J/m² et 7 J/m² selon la température de frittage de l'argent. Pour les couches de nickel frittées pendant 2 h à 1200°C sur du titanate de baryum dense, l'énergie d'adhérence moyenne est de l'ordre de 1 J/m².<br />Trois types d'essais d'indentation ont été appliqués aux mêmes interfaces métal/oxyde. La valeur moyenne de Gci estimée à partir des essais d'indentation normale et interfaciale est de l'ordre de 0,5 J/m². Des essais d'indentation sur section transversale ont également été effectués avec succès et un nouveau modèle est proposé pour l'analyse de leurs résultats. Selon le modèle de dépouillement utilisé, la moyenne des énergies d'adhérence Ag/BaTiO3 s'établit entre 1 et 3 J/m².

Σύνθετα που ενσωματώνουν σιδηροηλεκτρικά και πιεζοηλεκτρικά νανοσωματίδια, ομοιογενώς διεσπαρμένα μέσα σε μήτρα άμορφου πολυμερούς, αντιπροσωπεύουν μια νέα κατηγορία υλικών. Τα νανοδιηλεκτρικά σύνθετα ανήκουν σε ένα νέο τύπο υλικών που παρασκευάζονται για βελτιωμένες επιδόσεις, σαν διηλεκτρικά και ηλεκτρικοί μονωτές. Ορισμένα κεραμικά υλικά μπορούν να επιλεγούν και να αναμιχθούν με πολυμερή για να επιτευχθεί συνέργια μεταξύ της υψηλής διηλεκτρικής αντοχής των πολυμερών και της υψηλή διηλεκτρικής σταθεράς των κεραμικών. Τα εν λόγω συστήματα μπορούν να χρησιμοποιηθούν σε πολλές εφαρμογές, όπως σε ολοκληρωμένους πυκνωτές αποσύζευξης, ακουστικούς αισθητήρες εκπομπής, επιταχυνσιόμετρα γωνιακής επιτάχυνσης και ελεγκτές ρεύματος διαρροής, καθώς και σε στρατιωτικούς εξοπλισμούς και εφαρμογές στις μεταφορές. Έχει διαπιστωθεί πως τα νανοσύνθετα παρουσιάζουν βελτιωμένες ιδιότητες, αλλά όχι πλήρως κατανοητές, συγκριτικά με τα μικροσύνθετα. Επιπλέον, μελέτες δείχνουν ενδιαφέρουσες συμπεριφορές, όταν πρόκειται για πολύ χαμηλές περιεκτικότητες σε νανοσωματίδια. Στην παρούσα μελέτη, νανοσύνθετα εποξειδικής ρητίνης και κεραμικών νανοσωματιδίων BaSrTiO3 (μεικτό οξείδιο τιτανικού στροντίου βαρίου, BST) (<100 nm), παρασκευάστηκαν με διαδικασία ανάμειξης σε ένα ευρύ φάσμα συγκεντρώσεων, με σκοπό να μελετηθεί η επίδραση της πολύ χαμηλής (ή πολύ υψηλής) περιεκτικότητας στα χαρακτηριστικά του συστήματος. Οι διηλεκτρικές ιδιότητες και τα φαινόμενα χαλάρωσης μελετήθηκαν με τη βοήθεια της διηλεκτρικής φασματοσκοπίας (BDS) στο εύρος θερμοκρασιών από 30 oC έως 160 oC και συχνοτήτων 10-1 Hz έως 107 Hz. Ο μορφολογικός χαρακτηρισμός έγινε μέσω της ηλεκτρονικής μικροσκοπίας σάρωσης (SEM) και διαπιστώθηκε πως η νανοδιασπορά των εγκλεισμάτων είναι επιτυχής. Ο δομικός χαρακτηρισμός, των δοκιμίων αλλά και των σωματιδίων BaSrTiO3, έγινε μέσω περίθλασης ακτίνων-Χ (XRD) και διαπιστώθηκε πως τα φάσματα έρχονται σε συμφωνία με τη σχετική βιβλιογραφία. Από την ανάλυση των αποτελεσμάτων της διηλεκτρικής φασματοσκοπίας καταγράφονται τρεις διηλεκτρικές χαλαρώσεις, που αποδίδονται με φθίνουσα σειρά των χρόνων χαλάρωσης, στη διεπιφανειακή πόλωση, την μετάπτωση από την υαλώδη στην ελαστομερική φάση της μήτρας (α-χαλάρωση) και σε επαναδιευθετήσεις πολικών πλευρικών ομάδων της κύριας πολυμερικής αλυσίδας (β-χαλάρωση). Η εξέταση της επίδρασης της περιεκτικότητας σε νανοεγκλέισματα, στη διηλεκτρική απόκριση των σύνθετων αποκαλύπτει μη-αναμενόμενες συμπεριφορές, σε χαμηλές (αλλά και υψηλές) περιεκτικότητες. Πιο συγκεκριμένα στις χαμηλές περιεκτικότητες εμφανίζονται φαινόμενα ακινητοποίησης των μακροαλυσίδων και επακόλουθα των διπόλων, με αποτέλεσμα τη μείωση της διαπερατότητας και την αύξηση της θερμοκρασίας υαλώδους μετάπτωσης του συστήματος. Αντίστοιχα σε υψηλές περιεκτικότητες υπάρχει εκ νέου αύξηση της θερμοκρασίας υαλώδους μετάπτωσης, λόγω περιορισμένης κινητικότητας των διπόλων. Συμπερασματικά, θεωρείται πως υπάρχουν τρεις ‘’ζώνες περιεκτικοτήτων’’ που προσδίδουν διαφορετικά χαρακτηριστικά στη διηλεκτρική συμπεριφορά του συστήματος, μέσω της ρύθμισης των αλληλεπιδράσεων ρητίνης-εγκλεισμάτων. / Ceramic–polymer composites incorporating ferroelectric and piezoelectric crystal nanoparticles, homogeneously dispersed within an amorphous polymer matrix represent a novel class of materials. Nanodielectric composites belong to a new type of engineering materials suitable for improved performance as dielectrics and electrical insulators. Certain ceramic materials can be selected to be blended with polymers providing synergy between the high breakdown strength of polymers and the high permittivity of ceramic materials. These type of material systems can be used in plenty applications such as integrated decoupling capacitors, acoustic emission sensors, angular acceleration accelerometers, smart skins and leakage current controllers, as well as in military equipment and transport applications. It has been found that nanocomposites exhibit enhanced properties, yet not fully understandable, comparably to microcomposites. Furthermore, literature demonstrates some interesting dielectric behaviors when filler’s concentration comes to very low nanoparticle loadings. In the present study, nanocomposites of epoxy resin and ceramic BaSrTiO3 (Barium-Strontium Titanate, BST) nanoparticles (<100 nm), were prepared with a mixing procedure in a wide range of nanofiller concentrations, aiming to investigate the impact of very low (or very high) loadings on the system’s properties. The dielectric properties and the related relaxation phenomena were studied by means of Broadband Dielectric Spectroscopy (BDS) in the temperature range from 30 oC to 160 oC and frequency range from 10-1 Hz to 107 Hz. Scanning electron microscopy (SEM) was employed in order to examine the morphology of the produced specimens. The dispersion of nanoinclusions can be considered as satisfactory. Structural characterization of the systems as well as of the BaSrTiO3 nanopowder was examined via x-ray diffraction (XRD). Obtained results are in accordance with literature. Three dielectric relaxation processes were detected form the analysis of the dielectric spectra. They are attributed, with descending order of relaxation time, to interfacial polarization, glass to rubber transition of the polymer matrix (α-relaxation), and re-arrangement of polar side groups of the main macromolecular chain (β-relaxation). The influence of the nanoparticles content upon the dielectric response of the composites, reveal unexpected behaviours at low and high filler loading. In particular, effects of immobilization/entanglement of macromolecular chains and subsequently of dipoles, resulting to a decrease of the permittivity values and enhancement of the glass to rubber transition temperature of the systems, were ascertained. At the opposite edge, at high filler loading, an increase of glass to rubber transition temperature was also found, due to the limited mobility of the chains and dipoles. Concluding, the existence of three “zones of filler content” is assumed, providing different characteristics in the dielectric response of the systems, because of the tunable polymer-inclusion interactions.

Le titanate de baryum et de strontium (BaSrTiO3) est un matériau diélectrique de synthèse à forte permittivité possédant la propriété d'être accordable lorsqu'il est soumis à un champ électrique. Ceci est lié à sa structure cristalline à maille perovskite. Son intégration dans des dispositifs capacitifs est donc prometteuse pour l'industrie de la microélectronique. Il est déposé en couches minces par pulvérisation cathodique à partir de cibles pressées à froid au sein du laboratoire. L'étude de la croissance du matériau, dopé ou non, et de ses propriétés électriques à 100 khz ont permis d'envisager une montée en fréquence. Les évolutions de la permittivité diélectrique complexe et de l'accordabilité du matériau ont ainsi pu être étudiées sur un dispositif spécifique dans une gamme de fréquences allant de 1 à 60 ghz. L'utilisation d'un logiciel de simulation numérique par éléments finis (ELFI) dans le cadre de l'étude à haute fréquence permet de remonter aux caractéristiques propres du matériau, et ainsi d'interpréter plus finement les résultats issus de l'étude en basse fréquence. L'ensemble des connaissances acquises permet finalement de développer des dispositifs à capacité variable qui sont actuellement en cours d'élaboration au sein du laboratoire.

Cette étude s'attache a l'optimisation de faisceaux par mélange a deux ondes dans des cristaux photorefractifs et a leur emploi dans des dispositifs d'amplification d'images et dans un système de déflexion. Dans un premier temps, nous démontrons que l'application au cristal d'un champ électrique pulse périodique renforce le transfert d'énergie dans le mélange a deux ondes. L'étude analytique du phénomène montre que la technique des champs pulses permet de dépasser la limite d'amplification commune aux autres méthodes d'amplification. Cette technique ne permet pas cependant d'amplifier simultanément toutes les fréquences spatiales d'une image de haute résolution. Pour étudier l'amplification d'images, nous avons employé la technique classique du mélange a deux ondes sous champ alternatif carre. L'examen théorique et expérimental de l'amplification nous permet d'optimiser la forme du champ électrique a appliquer et la nature du dopage du cristal a employer pour obtenir une image amplifiée de haute résolution. Ensuite, nous concevons un système de déflexion de faisceaux s'intégrant dans un dispositif de commutation holographique. Les principaux éléments du système (cristal amplificateur de titanate de baryum et matrice de microlentilles) sont étudiés. On s'intéresse aux aberrations optiques, aux mécanismes physiques responsables du bruit dans le cristal photorefractif et on montre comment réduire ces sources de bruit. Enfin, nous présentons des amplifications d'images dans différents cristaux photorefractifs. Nous comparons les amplifications, les résolutions et les rapports signal a bruit obtenus dans différents échantillons de bi12geo20 et un échantillon de batio3.