Perovskite based artificial superlattices has recently been extensively investigated due to the immense promise in various device applications. The major applications include non-volatile random access memories, microwave devices, phase shifters voltage tunable capacitor applications etc. In this thesis we have taken up the investigation of two different types of symmetric superlattices, viz. BaZrO3/BaTiO3 and SrTiO3/BaZrO3, with possible applicability to voltage tunable devices. Chapter 1 deals with the introduction to the perovskite based functional oxides. Their various applications and the specific requirements for voltage tunable device applications has also been discussed in detail. The basic properties of BaTiO3 and SrTiO3, which are well documented in the literature, have been reviewed. The fundamental physics of interfacial interactions that influence the properties of superlattices is also discussed using existing models. The reason behind the choice of constructing artificial superlattices of BaZrO3/BaTiO3 and SrTiO3/BaZrO3 and the motivation behind this thesis is outlined. Chapter 2 gives a brief description of the basic characterization techniques that has been employed for studying the thin films. These include pulsed laser deposition of oxide thin films, structural characterization using X-Ray Diffraction and Atomic Force Microscope and electrical characterization of thin film metal-insulator-metal structures. The basic principle behind the techniques has also been included in various sections of this chapter. Chapter 3 introduces the reader to basic properties of the less studied perovskite material BaZrO3, one of the parent components of Ba(Zr,Ti)O3 based ceramics for high frequency applications. BaZrO3 is the common material in both the types of superlattices studied in this thesis. Initially the growth of polycrystalline BaZrO3 on (111)Pt/TiO2/SiO2/Si has been elaborated in this chapter. After characterizing the crystalline quality of the films and optimizing the growth conditions, epitaxial BaZrO3 films has been grown on (001) SrTiO3 substates. Dielectric properties of epitaxial BaZrO3 film have been measured as a function of temperature and frequencies. The electric field tunability of BaZrO3 films has been calculated from capacitance-voltage data for comparison with superlattice structures. Chapter 4 deals with the basic considerations involving growth of artificial superlattices and multilayers using pulsed laser ablation technique. The fundamental differences between formation of multilayers and superlattices have also been discussed, and the basic considerations for optimizing growth parameters are analyzed in this chapter. X-ray θ-2θ and φ-scans have been performed to investigate crystal quality of superlattices. The growth rates calculated from the satellite reflections in X-ray θ-2θ scans indicate fair degree of control over the growth and φ-scans confirms epitaxial cube-on cube growth of both types of superlattices. Atomic Force microscopy has been used to hcaracterize the film quality and surface morphology of superlattice structures and it has been found that the films have a very smooth surface with rms roughness of the order of few nanometres. Chapter5 deals with the detailed electrical characterization of both types of superlattices structures. Dielectric response showed nearly temperature invariance for both types of superlattices. Polarization measurements show that the heterostructures are in paraelectric state. Even for paraelectric/ferroelectric BaZrO3/BaTiO3 superlattices, stress induced stabilization of the paraelectric state is exhibited in low period superlattices. Paraelectric/paraelectric-SrTiO3/BaZrO3 superlattices exhibited a tunability of ~20% at intermediate modulation periods and an extremely stable dissipation factor with respect to temperature which is very attractive for device application point of view. A maximum tunability of ~40% has been observed for lowest period BaZrO3/BaTiO3 superlattice. Relatively high Quality Factors has been observed for both type of superlattices and their dependence on the modulation periods has been analyzed. Dielectric relaxation data showed that Maxwell-Wanger type of behaviour is exhibited but the presence of a conductance component G had to be realized in the equivalent circuit representation, which originates from the observation of a square law dependence of the alternating current on the frequency. Finally DC electrical characteristics were investigated as a function of temperature to determine the type of conduction mechanism that is involoved. The data has been analyzed using existing theories of high field conduction in thin dielectric films and it has been found that at different temperature ranges, the conduction mechanism varied from bulk limited Poole-Frenkel to Space Charge limited conduction. The activation energy calculation indicate that the physical processes responsible for dielectric relaxation and dc conduction are identical.

Perovskite oxides have provided a wide variety of exotic functionalities based on their unique physical and chemical properties. By combining different perovskite oxides, interesting physical phenomena have been observed at the interfaces of perovskite heterostructures. The most interesting among these phenomena is the formation of two dimensional electron gas at the interface of two perovskite materials SrTiO3 and LaAlO3 which led to a number of fascinating physical properties such as metal-insulator transition, super-conductivity, large negative magnetoresistance and so on. This has raised the interest in exploiting the interface of various hybrids structures built on the perovskite oxide backbone. On the other hand, the two dimensional (2D) van der Waals materials such as graphene, MoS2, boron nitride etc. represent a new paradigm in the 2D electron-ics. The functionalities of these individual materials have been combined to obtain new enriched functionalities by stacking different materials together forming van der Waals heterostructures. In this work, we present a detailed study of the interface in hybrid structures made of vander Waals materials (graphene and MoS2) and their hybrids with a perovskite material namely, SrTiO3 which is known as the building block of complex oxide heterostructures. In graphene-MoS2 vertical heterostructure, we have carried out a detailed set of investigations on the modulation of the Schottky barrier at the graphene-MoS2 interface with varying external electric field. By using different stacking sequences and device structures, we obtained high mobility at large current on-off ratio at room temperature along with a tunable Schottky barrier which can be varied as high as ∼ 0.4 eV by applying electric field. We also explored the interface of graphene and SrTiO3 as well as MoS2 and SrTiO3 by electrical transport and low frequency 1/f noise measurements. We observed a hysteretic feature in the transfer characteristics of dual gated graphene and MoS2 field effect transistors on SrTiO3. The dual gated geometry enabled us to measure the effective capacitance of SrTiO3 interface which showed an enhancement indicating the possible existence of negative capacitance developed by the surface dipoles at the interface of SrTiO3 and the graphene or MoS2 channel. Our 1/f noise study and the analysis of higher order statistics of noise also support the possibility of electric field-driven reorient able surface dipoles at the interface.

The dissertation thesis deals with investigation of electrode materials for Lithium-ion batteries. The main aim of investigation was focused to materials for negative electrode of Litihum-ion batteries. These negative electrode materials operate on intercalation principle. Object of interest are carbonaceous materials, especially their graphite forms. Graphite plays host role in lithium ion – graphite interactions that provides LiC6 compound. As a result of that investigation can be considered improving of graphite materials from stability, irreversible capacity and other parameters points of view. This kind of investigation takes an important part in field of elementary investigation work engaged to the next generation of Lithium-ion batteries. The work also describes the fire safety issue of Lithium-ion batteries along with compatibility of negative electrode materials and aprotic electrolytes.

Hlavním cílem této práce je charakterizace vzorků titanátů, jako materiálů pro sodíko-iontové (Na-ion) akumulátory. Syntéza některých vzorků je součástí této práce. Charakterizace je zaměřena na elektrochemické vlastnosti, složení a morfologii použitých materiálů. První část se zabývá lithium-iontovými (Li-ion) akumulátory. Byly vybrány, protože jsou ve vědeckých článcích dobře popsány a základní funkční princip je aplikovatelný také na Na-ion akumulátory. Materiály používáné pro katody, anody a elektrolyty následují po krátké části shrnující parametry a konstrukci Li-ion akumulátorů. Následující kapitola je zaměřena na sodíko-iontové akumulátory. Srovnání sodíku a lithia je následováno materiály používanými pro elektrody a elektrolyty (s důrazem na anodové materiály). Třetí část popisuje analytické metody použité pro charakterizaci elektrod a materiálů. Jedná se o elektrochemickou charakterizaci (cyklická voltametrie a galvanostatické cyklování s potenciálovým omezením), morfologii (rastrovací elektronová mikroskopie) a složení (X-ray difrakční spektroskopie). Poslední dvě kapitoly obsahují syntézu a charakterizaci sodného titanátu a charakterizaci dvou vzorků TiO2. Výsledky této práce jsou shrnuty v závěru.

Die Realstruktur des perowskitischen Modellsystems SrTiO3, welches in der Raumgruppe Pm-3m kristallisiert, wird durch die Sauerstoffvakanz als wichtigstem Defekt dominiert. Durch Temperaturbehandlung unter reduzierenden Bedingungen können Sauerstoffvakanzen in die Kristallstruktur eingebracht werden. Aufgrund ihrer positiven Ladung relativ zum Kristallgitter bewegen sie sich im elektrischen Feld entlang des TiO6-Oktaedernetzwerkes. Die Elektroformierung folgt dabei einem Arrheniuszusammenhang, wobei sowohl die Aktivierungsenergie als auch die Mobilität eine deutliche Abhängigkeit von der Kristallorientierung zeigen. Die Umverteilung der Sauerstoffvakanzen führt zu lokalen reversiblen Strukturänderungen, welche die Ausbildung einer neuen migrationsinduzierten feldstabilisierten polaren (MFP) Phase verursachen. In Abhängigkeit von der elektrischen Feldstärke zeichnet sie sich strukturell durch eine tetragonale Verzerrung der ursprünglich kubischen Elementarzelle aus und geht mit dem Verlust der Inversionssymmetrie einher. Die Polarisation in der Struktur wird durch die erwiesene Pyroelektrizität bestätigt und gilt als Grundlage, um anhand eines kristallographischen Symmetrieabstieges die Herleitung der Raumgruppe P4mm zu ermöglichen. Der durch die Migration hervorgerufene intrinsische Defektkonzentrationsgradient ruft eine elektromotorische Kraft hervor, deren Verwendung in einem elektrochemischen Energiespeicher experimentell nachgewiesen wurde. Diese neuen Funktionalitäten sind durch die Anwendung defektchemischer und kristallphysikalischer Konzepte infolge gezielter Materialmodifizierung unter Einfluss von Temperatur und elektrischem Feld zu verstehen. / The real structure of the perovskite-type model system SrTiO3, crystallizing in space group Pm-3m, is dominated by oxygen vacancies as most important defects. They are introduced in the crystal structure through heat-treatment under reducing conditions. Because of their positive charge relative to the crystal lattice, oxygen vacancies move in an electric field along the TiO6 octahedron network. This electroformation process follows an Arrhenius behavior. Both the activation energy and the mobility show an obvious dependence on the crystal orientation. Redistribution of oxygen defects causes local reversible structural changes, which involve the formation of a migration-induced field-stabilized polar (MFP) phase. In dependence on the electric field strength, this is structurally marked by a tetragonal distortion of the original cubic unit cell and accompanied by a loss of inversion symmetry. The polarisation in the crystal structure is confirmed by the proven pyroelectricity and serves for the argumentation to derive the space group P4mm by means of a crystallographic symmetry descent. The migration-induced intrinsic concentration gradient of oxygen vacancies leads to an electromotive force, whose application as electrochemical energy storage was proven experimentally. These new functionalities are explainable using defect chemistry and crystal physics in consequence of specific material modifications under the influence of temperature and external electric fields.

The advances in modern communication systems have brought about devices with more functionality, better performance, smaller size, lighter weight and lower cost. Meanwhile, the requirement for newer devices has become more demanding than ever. Tunability and flexibility are both long-desired features. Tunable devices are ‘smart’ in the sense that they can adapt to the dynamic environment or varying user demand as well as correct the minor deviations due to manufacturing fluctuations, therefore making it possible to reduce system complexity and overall cost. It is also desired that electronics be flexible to provide conformability and portability. Previously, tunable devices on flexible substrates have been realized mainly by dicing and assembling. This approach is straightforward and easy to carry out. However, it will become a “mission impossible” when it comes to assembling a large amount of rigid devices on a flexible substrate. Moreover, the operating frequency is often limited by the parasitic effect of the interconnection between the diced device and the rest of the circuit on the flexible substrate. A recent effort utilized a strain-sharing Si/SiGe/Si nanomembrane to transfer a device onto a flexible substrate. This approach works very well for silicon based devices with small dimensions, such as transistors and varactor diodes. Large-scale fabrication capability is still under investigation. A new transfer technique is proposed and studied in this research. Tunable BST (Barium Strontium Titanate) IDCs (inter-digital capacitors) are first fabricated on a silicon substrate. The devices are then transferred onto a flexible LCP (liquid crystalline polymer) substrate using iv wafer bonding of the silicon substrate to the LCP substrate, followed by silicon etching. This approach allows for monolithic fabrication so that the transferred devices can operate in millimeter wave frequency. The tunability, capacitance, Q factor and equivalent circuit are studied. The simulated and measured performances are compared. BST capacitors on LCP substrates are also compared with those on sapphire substrates to prove that this transfer process does not impair the performance. A primary study of a reflectarray antenna unit cell is also conducted for loss and phase swing performance. The BST thin film layout and bias line positions are studied in order to reduce the total loss. Transferring a full-size BST-based reflectarray antenna onto an LCP substrate is the ultimate goal, and this work is ongoing at the University of Central Florida (UCF). HFSS is used to simulate the devices and to prove the concept. All of the devices are fabricated in the clean room at UCF. Probe station measurements and waveguide measurements are performed on the capacitors and reflectarray antenna unit cells respectively. This work is the first comprehensive demonstration of this novel transfer technique.

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<p dir="ltr">Piezoelectric polymers and ceramics have applications throughout many fields, including their use as pressure sensors and transducers. Of the polymers, poly(vinylidene fluoride – trifluoroethylene) (P(VDF-TrFE)), has been the go-to for its high piezoelectric performance. With the addition of aluminum nanopowders (nAl), P(VDF-TrFE) acts as a binder and oxidizer, creating an energetic composite, a so-called piezoenergetic. However, this typically results in lower d₃₃ coefficients and can have lower reactivity since ideal mixtures may short when poled. Here, we develop and demonstrate single-layer and multilayer polymer composite films with high piezoelectric and energetic content. We prepared single-layer thin film piezoelectric energetic composites of nAl and P(VDF-TrFE) and a combination of thermal annealing and poling at elevated temperatures enabled full poling of 9 wt.% nAl/P(VDF-TrFE) films with d₃₃ of 22.7 pC/N that is comparable to P(VDF-TrFE) films. We also investigated the addition of barium titanate (BaTiO₃) particles as a piezoelectric ceramic to enhance the d₃₃ coefficient. In the neat polymer, BaTiO₃ had differing effects depending on the particle size, with 200 nm particles improving the d₃₃ coefficient more than the 1 μm particles. However, neither size of BaTiO₃ particle had a substantial effect on the piezoelectricity in the 9 wt.% nAl/P(VDF-TrFE) films. We also prepared hot-pressed, three-layer “sandwich” P(VDF-TrFE) – 30 wt.% nAl/P(VDF-TrFE) – P(VDF-TrFE) composites, which had marginally lower d₃₃ coefficients than the single-layer 9 wt.% nAl/P(VDF-TrFE) films. However, the 30 wt.% nAl/P(VDF-TrFE) sandwich films were far more energetic than the 9 wt.% nAl/P(VDF-TrFE) films, as confirmed by simultaneous differential scanning calorimetry and thermogravimetric analysis (DSC/TGA) and deflagration studies. The single films will often fail to fully sustain a deflagration, while the sandwich films burn completely. In addition, we can ignite the sandwich samples with an electrical discharge making these films also useful in ignition applications. To demonstrate the use of piezoenergetic films, 9 wt.% nAl/P(VDF-TrFE) single layer and 30 wt.% nAl/P(VDF-TrFE) sandwich films were calibrated as pressure gauges using a mini drop weight setup, and then demonstrated as a pressure gage. The improvements in the piezoelectric coefficient of the 9 wt.% nAl/P(VDF-TrFE) single layer films, as well as the energetic performance in the form of the 30 wt.% nAl/P(VDF-TrFE) sandwich films strongly amplify the existing potential of these multifunctional composites in energetic and pressure sensing applications.</p>