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Integration of complex optical functionalities with high performance will lead to a huge development in the field of nanophotonics for a broad range of applications. Silicon photonics is currently the leading technology for the implementation of low-cost photonic integrated devices. The great potential of this technology relies on its compatibility with the mature silicon integrated circuits manufacturing based on complementary metal-oxide semiconductor (CMOS) processes widely used in microelectronic industry and the availability of high quality silicon-on-insulator wafers, an ideal platform for creating planar waveguide circuits that offers strong optical confinement due to the high index contrast between silicon (n=3.45) and silicon dioxide (n=1.45). In order to keep improving the performance of photonic devices on silicon, the integration of CMOS compatible materials with unique properties shows up as an excellent opportunity to overcome the current limitations in silicon while offering unprecedented and novel capabilities to the silicon platform. In this way, barium titantate (BaTiO3) stands out as one of the most disruptive candidates. The work developed in this thesis is essentially focused on the design, fabrication and characterization of an electro-optic modulator based on a hybrid BaTiO3 on silicon structure for the implementation of high performance electro-optic functionalities with beyond state-of-the art performance that currently cannot be afforded in silicon photonics technology. / La integración de funcionalidades ópticas con alto rendimiento llevará a un gran desarrollo en el campo de la nanofotónica para un amplio abanico de aplicaciones. Actualmente, la fotónica de silicio es la tecnología líder para la implementación de dispositivos fotónicos integrados a bajo coste. El gran potencial de esta tecnología reside en su compatibilidad con las maduras técnicas de fabricación de circuitos integrados de silicio basadas en los procesos "complementary metal-oxide semiconductor" (CMOS) ampliamente utilizados en la industria microelectrónica y la disponibilidad de disponer de obleas de silicio sobre aislante de alta calidad, una plataforma ideal para crear circuitos de guía de ondas planas que ofrecen un fuerte confinamiento óptico debido al alto contraste índices entre el silicio (n=3,45) y el dióxido de silicio (n=1,45). Para poder mejorar el rendimiento de dispositivos fotónicos en silicio, la integración de materiales con propiedades excepcionales y compatibles con los procesos de fabricación CMOS surge como una excelente oportunidad para superar las actuales limitaciones de la tecnología de silicio al mismo tiempo que ofrece oportunidades novedosas y sin precedentes en la plataforma de silicio. En este sentido, el material titanato de bario (BaTiO3) se postula como uno de los candidatos más prometedores. El trabajo desarrollado en esta tesis está esencialmente enfocado en el diseño, fabricación y caracterización de un modulador electro-óptico basado en una estructura híbrida de BaTiO3 en silicio para la implementación de funcionalidades electro-ópticas de alto rendimiento más allá del estado del arte de las que no se puede disponer actualmente en la tecnología de fotónica de silicio. / La integració de funcionalitats òptiques amb alt rendiment portarà a un gran desenvolupament en el camp de la nanofotònica per a un ampli ventall d'aplicacions. Actualment, la fotònica de silici és la tecnologia capdavantera per a la implementació de dispositius fotònics integrats a baix cost. El gran potencial d'aquesta tecnologia resideix en la seva compatibilitat amb les madures tècniques de fabricació de circuits integrats de silici basades en els processos "complementary metal-oxide semiconductor" (CMOS) amplament utilitzats en la indústria microelectrònica i la disponibilitat de disposar d'hòsties de silici sobre aïllant d'alta qualitat, una plataforma ideal per crear circuits de guia d'ones planes que ofereixen un fort confinament òptic a causa de l'alt contrast d'índexs entre el silici (n=3,45) i el diòxid de silici (n=1,45). Per poder millorar el rendiment de dispositius fotònics en silici, la integració de materials amb propietats excepcionals i compatibles amb els processos de fabricació CMOS sorgeix com una excel·lent oportunitat per superar les actuals limitacions de la tecnologia de silici al mateix temps que ofereix oportunitats noves i sense precedents en la plataforma de silici. En aquest sentit, el material titanat de bari (BaTiO3) es postula com un dels candidats més prometedors. El treball desenvolupat en aquesta tesi està essencialment enfocat en el disseny, fabricació i caracterització d'un modulador electro-òptic basat en una estructura híbrida de BaTiO3 en silici per a la implementació de funcionalitats electro-òptiques d'alt rendiment més enllà de l'estat de l'art de les quals no es pot disposar actualment a la tecnologia de fotònica de silici. / Castera Molada, P. (2017). Development of new photonic devices based on barium titanate in silicon [Tesis doctoral no publicada]. Universitat Politècnica de València. https://doi.org/10.4995/Thesis/10251/86197 / TESIS

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<p dir="ltr">Accurately locating a radio-frequency (RF) emitter is imperative in the defense sector, and passive direction finding systems are intriguing due to relatively low cost. This approach involves using the time difference between a signal’s impact at equispaced antennas to determine the location of the emitter, a particular challenge for wideband waveforms operating near the noise floor. Microwave photonic systems have been demonstrated for passive direction finding. These techniques possessed drawbacks, such as reliance on the incoming signal’s bandwidth, dependence on laser power, or the inability to recover an angle from wideband pulses. This thesis presents a novel approach to passive direction finding by translating the methods of spectral interferometry from the optical domain to RF. Spectral interferometry involves interfering a time-delayed reference pulse with a “signal” pulse that has passed through an unknown system. By removing the spectral phase of the reference pulse from the resulting interferogram, the spectral phase of the uncharacterized system is recovered. This enables direction-finding for many waveforms, including the wideband low peak power chirps frequently used in radar. Incorporating an analog optical delay line into both a hard-wired RF interferometer and a two-element antenna array demonstrated spectral interferometric processing of chirped signals with up to 1 GHz instantaneous bandwidth. The technique extracted accurate delays and angles to within 2$\degree$ throughout testing. This approach only requires the imposed delay be longer than the autocorrelation of the bandwidth limited pulses. With additional backend processing, this method could simultaneously determine the angle and classify the incoming signal.</p>

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<p>Management of incoming solar radiation and use of the sky as an ultimate heat sink are technological imperatives as climate change shifts our reliance from fossil fuels to sustainable sources.  Selective solar absorbers are a possible route for solar harvesting as they collect the incoming radiation for process heat or space heating.  Here, improvement in the performance of selective solar absorbers via photon recycling is investigated using a stepped index rugate filter.  The final proposed filter when integrated with a high vacuum selective solar absorber could see an improvment in solar-thermal conversion efficiency from 13% to 30.6%. Then, a frequency selective optical filter is fabricated with uses including improvement of radiative coolers.  The measured optical characteristics are compared with simulation data and found to match well.</p> <p><br></p> <p>The shift to sustainable sources of electricity will require an expansion of the electrical grid.  The backbone of the grid for converting high voltage AC to DC, and vice versa, is power electronics.  The current state-of-the-art technology is GaN HEMTs, but GaN MISHEMTs are poised to replace them since MISHEMTs reduce the gate leakage current; a deficiency of the GaN HEMT architecture.  First, time dependent dielectric breakdown in GaN MISHEMTs is investigated using concurrent electrical and thermoreflectance methods.  A susceptibility in the MISHEMT architecture is found and possible solutions are proposed.  Then, liquid cooling of GaN HEMT PAs is explored by demonstrating integration of an X-band front end module, printed circuit board, and fluid manifold.  The integration shows great promise as two-phase cooling performance improved with increasing power dissipated, while single-phase cooling performance degraded.</p>

<p dir="ltr">Two-dimensional (2D) perovskite semiconductors are an emerging family of hybrid materials featuring a built-in quantum well architecture which has gained much interest due to its potential as a promising candidate for next-generation photovoltaic and optoelectronic applications. To successfully integrate 2D perovskites as efficient devices, it is imperative that a thorough understanding of the fundamental properties these materials possess and how their complex heterostructures behave is established. However, to date, the synthetic challenges regarding high-quality crystals of these materials due to the structural complexity and the hybrid nature have impeded further progress in this area. Thus, we demonstrate a general method to construct tunable 2D organic semiconductor-incorporated perovskites (OSiP) by simultaneously manipulating slab thickness of the inorganic layers and conjugation length of the organic substituents. The energy band offsets and exciton dynamics at the organic-inorganic interfaces were elucidated using computational means and ultrafast spectroscopy, while lattice dynamics were quantified via temperature-dependent spectroscopy and X-ray diffraction studies. Results show that longer and more planar π-conjugated organic ligands induce a more rigid inorganic crystal lattice, which leads to suppressed exciton-phonon interactions and superior optoelectronic properties such as efficient lasing.</p><p dir="ltr">Furthermore, understanding ion migration in two-dimensional (2D) perovskite materials is key to enhancing device performance and stability as well. However, prior studies have been primarily limited to heat and light-induced ion migration. To investigate electrically induced ion migration in 2D perovskites, we construct a high-quality single crystal 2D perovskite heterostructure device platform with near defect-free van der Waals contact. While achieving real-time visualization of directional ion migration, we also uncover the unique behavior of halide anions inter-diffusing towards the opposite direction under prolonged bias. Confocal microscopy imaging reveals a halide migration channel that aligns with the crystal and heterojunction edges. After sustained ion migration, stable junction diodes exhibiting up to ~1000-fold forward to reverse current ratio are realized. Unraveling the fundamental properties of 2D OSiPs as well as ion migration in 2D perovskite heterostructures paves the way towards stable and efficient devices.</p>

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