This thesis proposes a new variable-order prediction method to predict the Shannon expansion order during the BDD tree generator. Combining this method with the original minimum width method, we can generator a better BDD tree to be used in our pass-transistor logic synthesizer. Also we propose two partitioning methods to reduce the length of the critical paths. The first method can effectively reduce the critical path delay at the cost of much higher area cost. The second method explores the common factors in the Boolean functions to reduce the critical path delay with reasonably increased area cost. Furthermore, we discuss the methods of inserting regenerating inverters/buffers along the path in BDD tree by selecting inverter cells and MUX cells of proper driving strength to optimize the area/cost/power performance. Finally, the automatic layout generation is considered to produce the physical layout more efficiently compared with that using commericial automatic place-and-route tools.

Abstract Advocate ' the knowledge economy ' in era in the whole world now, the enterprises possess knowledge which also calling the value of Intangible Assets, has already surmounted the general tangible assets gradually, and can produce the greatest value for enterprises. In view of the knowledge economy era arrival, how is the enterprise via ' Knowledge Management (KM), make the latent knowledge and technology inside personnel transform outside show knowledge, and it is the key subject that enterprises face to reach the knowledge application and innovation through storing, sharing and spreading. LCD display industry is following semiconductor, Taiwan does one's utmost to promote one of the industries of development. The industry of the display is an industry with keen competition, the life cycle of the products is short, and the technical development of the products is fast. So it need under limited resources, avoid making the repeated mistake and paying, save the time of solving problems in order to be absorbed in the products for reform and innovation. So, this main key of research lies in inspecting how LCD display industry uses the effective knowledge management style to promote one's own competitiveness. The extensive academic theory and knowledge management style of current industry at first of this text carries on the research discussion, the purpose lies in that it influences organizing to promote the information management factor to find out. And the high-order executive and advisor representative to enterprises, carry on depth interview, make deep quality and analyze the data. The result of study finds, the enterprise culture is influenced organization to carry out the important factor of knowledge management. In addition, external knowledge becomes and offers the important source that enterprises maintain the competition advantage.

Transparent thin film transistors fabricated at room temperature by radio frequency magnetron sputtering using indium oxide material system were proposed. The electrodes of the transparent thin film transistors were obtained by depositing indium oxide with 10% tim doping. Resistivity as low as 4¡Ñ10-4£[-cm at room temperature was achieved. The channel layers of the transparent thin film transistors were fabricated using pure indium oxide target in an Argon and oxygen environment. Resistivity larger than 10-5£[-cm was obtained with 60% oxygen partial pressure. Silicon nitride prepared by room temperature radio frequency sputtering were used for the gate dielectric layer with low leakage current. Environmental-safe lift-off processes were used to fabricated the electrodes, the isolation layer, and the channel layer. The transistor characteristics were obtained by standard I-V measurement. The on-off ratio of the 30£gm ¡Ñ 150£gm transparent thin film transistor is 100.

Using GaAs HBT provided by AWSC to construct Gummel Poon static model.then using the GaAs HBT processing of GCS to design MMIC power amplifier for the 1.9~2.0 GHz PCS system. This power amplifier exhibits an output power of 27dBm and a power added efficiency as high as 32% at an operation voltage of 3.4V.

We have grown the high quality AlGaN/GaN heterostructure by plasma-assisted molecular beam epitaxy. We obtained the mobility of two-dimensional electron gas of the AlGaN/GaN is 9300 cm2/Vs and carrier concentration is 7.9¡Ñ1012 cm-2 by conventional van der Pauw Hall measurement at 77K. The samples made of the AlGaN/GaN heterostructure were patterned to Hall bar geometry with a width of 20£gm by conventional photolithography. After the photolithography, the nanowire was fabricated by the process of focus ion beam (FIB), and the widths of nanowire were reduced to 900 nm, 500 nm, 300 nm, 200nm, 100 nm, 80 nm and 50 nm respectively. The SiO2 layer and Al electrode were deposed on the samples to form nanowired MOSFETs. We have studied the leakage current measurement on the AlGaN/GaN nanowired MOSFETs at 300K. On the 100 nm and 200 nm width of nanowires, we did not observe the leakage current for the gate voltage work range from -2.5 to 3.0 V and from -0.5 to 0.5 V respectively.

The thesis is divided into two parts. One is about the preparation of discotic liquid crystals Acid-6. The other is about the growth of Acid-6 thin film by thermal evaporation on silicon oxide surfaces and modified silicon oxide surfaces such as self-assembled monolayer(SAM) in different temperature. The surface morphology and molecular orientation of the thin film were studied by Atomic Force Microscopy(AFM) , X-ray Diffraction (XRD) , and then they were applicated to organic thin film transistor and measured properties by Semiconductor Parameter Analyzer. In the second part of our research, our expectative characteristics was not observed in different temperature and substructure. In the other side, we guessed that because discotic liquid crystals Acid-6 is negative semiconductor materials, so it is susceptible to hydrosphere, thus we can¡¦t observe the electric characteristic of OTFT in the atmosphere. In addition, due to discotic liquid crystals Acid-6 have biggish moleculer weight, thus its viscosity was so big that cause the diameter of Acid-6 crystals to be too small. Therefore, it influenced the carrier mobility. Finally, from the aspect of procedure about fabrication of the devices we can discuss whether this parameter of this device can apply to OTFT.

Undoped body multi gate (MG) Metal Oxide Semiconductor Field Effect Transistors (MOSFET) are appearing as replacements for single gate bulk MOSFET in forthcoming sub-45nm technology nodes. It is therefore extremely necessary to develop compact models for MG transistors in order to use them in nano-scale integrated circuit design and simulation. There is however a sharp distinction between the electrostatics of traditional bulk transistors and undoped body devices. In bulk transistor, where the substrate is sufficiently doped, the inversion charges are located close to the surface and hence the surface potential solely controls the electrostatic integrity of the device. However, in undoped body devices, gate electric field penetrates the body center, and inversion charge exists throughout the body. In contrast to the bulk transistors, depending on device geometry, the potential of the body center of undoped body devices could be higher than the surface in weak inversion regime and the current flows through the center-part of the device instead of surface. Several crucial parameters (e.g. Sub-threshold slope) sometimes become more dependable on the potential of body center rather than the surface. Hence the body-center potential should also be modeled correctly along with the surface-potential for accurate calculation of inversion charge, threshold voltage and other related parameters of undoped body multi-gate transistors. Although several potential models for MG transistors have been proposed to capture the short channel behavior in the subthreshold regime but most of them are based on the crucial approximation of coverting the 2D Poisson’s equation into Laplace equation. This approximation holds good only at surface but breaks down at body center and in the moderate inversion regime. As a result all the previous models fail to capture the potential of body center Correctly and remain valid only in weak-inversion regime. In this work we have developed semiclassical compact models for potential distribution for double gate (DG) and cylindrical Gate-All-Around (GAA) transistors. The models are based on the analytical solution of 2D Poisson’s equation in the channel region and valid for both: a) weak and strong inversion regimes, b) long channel and short channel transistors, and, c) body surface and center. Using the proposed model, for the first time, it is demonstrated that the body potential versus gate voltage characteristics for the devices having equal channel lengths but different body thicknesses pass through a single common point (termed as crossover point). Using the concept of “crossover point” the effect of body thickness on the threshold voltage of undoped body multi-gate transistors is explained. Based on the proposed body potential model, a new compact model for the subthreshold swing is formulated. Some other parameters e.g. inversion charge, threshold voltage roll-off etc are also studied to demonstrate the impact of body center potential on the electrostatics of multi gate transistor. All the models are validated against professional numerical device simulator.

Thesis (M.S.)--Mississippi State University. Department of Electrical and Computer Engineering. / Title from title screen. Includes bibliographical references.

In this dissertation, charge transport through organic field effect transistors is explored. In particular, small molecule-based devices consisting of Pentacene semiconducting thin films are investigated. The relationship between electric field and carrier velocity is explored over a wide range of electric fields. These velocities are then compared to directly measured velocities measured from transient measurements. New device structures are fabricated in order to provide low voltage operation, along with a method to stabilize the output response and reduce bias stress effects. A novel method is proposed to investigate the dynamics of trap response rate in highly localized systems through the characterization of the large signal frequency response of a vii device. This method is then used to gain greater insight into bias stress effects and the ability of a transistor to respond to a rapidly changing input. A greater understanding of the transport of charge through a channel is obtained, leading to a more realistic picture in which a single mobility value is an insufficient description of carrier transport through a material. / text

In this work, the Dyson's equation formalism is outlined and applied toseveral open quantum systems. These systems are composed of a core,quantum-mechanical set of discrete states and several continua, representing macroscopic systems. The macroscopic systems introducedecoherence, as well as allowing the total particlenumber in the system to change.Dyson's equation, an expansion in terms of proper self-energy terms, isderived. The hybridization of two quantum levelsis reproduced in this formalism, and it is shown that decoherence followsnaturally when one of the levels is replaced by a continuum.The work considers three physical systems in detail. The first,quantum dots coupled in series with two leads, is presented in a realistic two-level model. Dyson's equation is used to account for the leads exactly to all ordersin perturbation theory, and the time dynamics of a single electron in the dotsis calculated. It is shown that decoherence from the leads damps the coherentRabi oscillations of the electron. Several regimes of physical interest areconsidered, and it is shown that the difference in couplings of the two leadsplays a central role in the decoherence processes.The second system relates to the decay-out ofsuperdeformed nuclei. In this case, decoherence is provided by coupling to theelectromagnetic field. Two, three, and infinite-level models are consideredwithin the discrete system. It is shown that the two-level model is usuallysufficient to describe decay-out for the classic regions of nuclearsuperdeformation. Furthermore, a statistical model for the normal-deformedstates allows extraction of parameters of interest to nuclear structure fromthe two-level model. An explanation for the universality of decayprofiles is also given in that model.The final system is a proposed small molecular transistor. TheQuantum Interference Effect Transistor is based on a single monocyclic aromatic annulene molecule, with twoleads arranged in the meta configuration. This device is shown to be completely opaque to charge carriers, due to destructive interference. Thiscoherence effect can be tunably broken by introducing new paths with a real orimaginary self-energy, and an excellentmolecular transistor is the result.