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No. of bitstreams: 1 silva_rr_dr_araiq_par.pdf: 1063262 bytes, checksum: cc72dc79773da734cac767490756f56e (MD5) Previous issue date: 2016-05-23 / Coordenação de Aperfeiçoamento de Pessoal de Nível Superior (CAPES) / Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP) / Nanoestruturas unidimensionais de telúrio (Te1D) na forma de whiskers, fios e hélices foram preparados com facilidade por uma síntese em etapa única na presença de solução aquosa de Pluronic® F68 à baixas temperaturas (< 100 °C) e pressão ambiente. A forma das nanoestruturas puderam ser controladas de acordo com a cinética da reação. Estruturas empacotadas de nanowhiskers e nanofios de Te foram obtidas via auto-organização em interface líquido-líquido e pela técnica de drop-cast em substrato de Si/SiO2. Estruturas híbridas 1D foram obtidas utilizando nanoestruturas Te1D como molde de sacrifício para anexar nanopartículas metálicas ou mesmo produzir nanoestruturas 1D metálicas. Por exemplo, nanoestruturas híbridas 1D foram preparadas decorando nanofios de Te com nanopartículas de Ag em solução aquosa de poli(vinilpirrolidona). Nanoestruturas 1D de Au com forma de nódulos foram preparados por deslocamento galvânico de íons Au3+ em uma mistura de nanohélices de Te, ácido ascórbico e solução aquosa de poli(vinilpirrolidona). Além disso, nanohélices de Te foram funcionalizadas com uma camada resina resorcinol-formaldeído em condições brandas de síntese. A resina de resorcinol-formaldeído é uma via intermédia para explorar a deposição de compostos opticamente ativos tais como nanopartículas de hidroxicarbonato de Tb3+ ou nanopartículas de Au. Para aplicações práticas é essencial que estas nanoestruturas possam ser suportadas em filmes rígidos ou flexíveis de alta qualidade óptica. Filmes de polímeros naturais puros e filmes híbridos de sol-gel epóxi foram avaliados como potenciais matrizes hospedeiras para luminóforos. A fabricação de híbridos é baseada na incorporação de 3-glicidoxipropiltrimetoxissilano na solução homogênea de polímero natural com posterior secagem sobre uma superfície plana. Particularmente, filmes flexíveis de fibroína da seda e acetato de celulose e os seus híbridos derivados exibiram excelentes propriedades ópticas para hospedar compostos opticamente ativos. Por exemplo, compostos de Eu3+ emissores na região do vermelho e corantes fluorescentes foram incorporados em matriz pura de polímero e híbridos epóxi e suas propriedades ópticas foram investigadas. Laser de corantes por feedback distribuído (DFB) foram fabricados dopando grades de difração de fibroína de seda com Rodamina 6G. Devido a sua capacidade de replicar superfícies padronizadas com resolução nanométrica, grades de fibroina da seda dopadas com corante foram depositadas contra a grade de difração de uma mídia de disco compacto comercial. Lasers modificados de DFB baseados em filmes de fibroina contendo nanopartículas espalhadoras de luz de SiO2 e Ag aleatoriamente distribuídas na grade de fibroina demonstraram aumento da intensidade do laser, além de estreitamento da largura do pico de emissão. Filmes híbridos flexíveis e transparentes (> 85%) de fibroina da seda e acetato de celulose modificados com função epóxi e contendo compostos fluorescentes na região do vermelho como complexos β-dicetonato de Eu3+ e nanopartículas de YVO4:Eu3+ em baixa proporção relativa mássica (<5%) foram preparados. De maneira geral, o resultado são filmes homogêneos com funções epoxi e/ou alcoxissilano não hidrolisados disponíveis para outras modificações químicas. Devido a matéria-prima limitada de polímeros naturais para uma alta demanda de fabricação de dispositivos ópticos, é igualmente importante desenvolver materiais com base na reutilização de polímeros sintéticos. Filmes finos de poliestireno foram concebidos por dissolução de poliestireno expandido (EPS) recuperado de resíduos em D-limoneno, um solvente verde proveniente de óleos cítricos. Filmes transparentes dopados com complexos β-dicetonato de Eu3+ demonstraram excelente transparência e aptos para uso em guias de luz. Estes resultados são motivadores para a) a engenharia de nanoestruturas 1D com propriedades ópticas sintonizáveis bem como, b) desenvolvimento de híbridos flexíveis e transparentes baseados em híbridos de polímeros naturais com alta funcionalidade química ou polímeros sintéticos reciclados como potenciais matrizes hospedeiras ópticas almejadas em aplicações fotônicas. / One-dimensional Te nanostructures (Te1D) in the shape of whiskers, wires and helices were prepared by a facile one-pot synthesis in the presence of aqueous Pluronic® F68 solution at low temperatures (< 100 ºC) and ambient pressure. The shape of Te1D nanostructures could be manuvered according with the reaction kinectics. We evaluate some techniques to assemble Te1D nanostructures on the pursuit for complex nanoarchitectures. Bundles of Te nanowhiskers and nanowires were achieved by self-assembly in liquid-liquid interface or by drop-cast technique in Si/SiO2 substrates. 1D hybrid structures have been conceived by using Te1D nanostructures as sacrificial template to attach metallic nanoparticles or even produce metallic 1D nanostructures. For example, 1D hybrid nanostructures were easily prepared by decorating Te nanowires with Ag nanoparticles in aqueous solution of poly(vinylpyrrolidone). Au 1D nanostructures with nodular-like shape were prepared by galvanic displacement of Au3+ ions in a mixture of Te nanohelices, ascorbic acid and an aqueous solution of poly(vinylpyrrolidone). Furthermore, Te1D nanohelices were functionalized with a layer of resorcinol-formaldehyde resin at mild synthesis conditions. The RF resin allowed us to fashion an intermediate pathway to explore the deposition of optically active compounds like Tb3+ hydroxylcarbonate or Au nanoparticles. Seeking practical applications, these nanostructures should be hosted over rigid or flexible films possessing excellent optical properties. Pure natural polymers and epoxy sol-gel hybrids films were evaluated as potential host for luminophors. The fabrication of epoxy hybrids is based on the incorporation of 3-glycidoxypropyltrimethoxysiloxane on the homogenous solution of natural polymer with subsequent casting over flat surface. Particularly, flexible silk fibroin and cellulose acetate films and their derivative hybrids displayed excellent optical properties to host optically active compounds. For instance, red emitting Eu3+ compounds and fluorescent dyes were hosted on pure natural polymer and hybrid films and the optical features of the luminescent films were investigated thoroughly. Distributed feedback dye-lasers were fabricated by doping silk fibroin diffraction gratings with Rhodamine 6G. Owing its ability to mimic patterned surfaces at nanoscale resolution, dye-doped SF gratings were fabricated using replica-casting patterning against a commercial blank digital versatile disc as template. A modified DFB Laser based on SF films with Ag or SiO2 light scattering particles randomly distributed on the grating unveiled an enhancement of laser intensity withal narrowing of emission peak linewidth. Flexible and highly transparent SF- and CA-epoxy hybrids (> 85%) containing red fluorescent Eu3+ b-diketonate complex and YVO4:Eu3+ nanoparticles at low relative content (< 5 wt%) were tailored. In general, the outcome is homogeneous films with epoxy and/or unhydrolized alkoxysilane functions available for further chemical modification. Owing the limited feedstock of natural polymers for high demanding production of optical devices, it is equally important develop materials based on the reuse of synthetic polymers. Thin films of polystyrene were conceived by dissolving waste-recovered expanded-polystyrene (EPS) in D-limonene, a green solvent from citrus oil. Transparent EPS films doped with Eu3+ b-diketonate complex displayed excellent transparency and light waveguiding, These assertions provide a framework that motivates the research on a) engineering of 1D hybrids nanostructures with tunable optical properties and b) flexible natural polymer/epoxy hybrid with enhanced functionality or plastic recycled as potential optical hosts sought in photonic applications. / FAPESP: 2013/12367-6

Chalcogenide glass based Phase Change Memories (PCMs) are being considered recently as promising alternatives to conventional non-volatile Random Access Memories (NVRAMs). PCMs offer high performance & low power consumption, in addition to other advantages, such as high scalability, high endurance and compatibility with complementary metal oxide semiconductors (CMOS) technologies. Basically PCM is a resistance variable non-volatile memory in which the memory bit state is defined by the resistance of the material. In this case, the initial ‘OFF’ state (logic zero) corresponds to the high resistance amorphous state and the logic 1 or ‘ON’ state corresponds to low resistance crystalline state. The present thesis work deals with electrical, thermal, mechanical and optical characterization of certain tellurium based chalcogenide glasses in bulk and thin film form for phase change memory applications. A comparative study has been done on the electrical switching behavior of Ge-Te-Se & Ge-Te-Si amorphous thin film samples with their bulk counterparts. Further, electrical switching and thermal studies have been undertaken on bulk Ge-Te-Bi and Ge-Te-Sn series of samples. The composition dependence of switching voltages of bulk and thin film samples studied has been explained on the basis of different factors responsible for electrical switching. The thesis contains ten chapters: Chapter 1 deals with a brief introduction on chalcogenides and their applicability in phase change memories. The glass transition phenomenon, synthesis of chalcogenide alloys, different structural models of amorphous semiconductors and electrical switching behavior are also discussed in detail in this chapter. Further, a brief description of optical and mechanical properties along with the principles of few characterization techniques used is discussed. Also, a brief overview on PCM application of chalcogenides is presented. The second chapter provides the details of various experimental techniques used to measure electrical, thermal, optical and mechanical properties of few tellurium based chalcogenide glassy systems. In the third chapter, the electrical switching behavior of amorphous Al23Te77 thin film devices, deposited in co-planar geometry, has been discussed. It is found that these samples exhibit memory type electrical switching. Scanning Electron Microscopic studies show the formation of a crystalline filament in the electrode region which is responsible for switching of the device from high resistance OFF state to low resistance ON state. The switching behavior of thin film Al-Te samples is found to be similar to that of bulk samples, with the threshold fields of bulk samples being higher. This has been understood on the basis of higher thermal conductance in bulk, which reduces the Joule heating and temperature rise in the electrode region. Electrical switching and thermal behavior of bulk; melt quenched Ge18Te82-xBix glasses (1 ≤ x ≤ 4) are presented in chapter 4. Ge-Te-Bi glasses have been found to exhibit memory type electrical switching behavior, which is in agreement with the lower thermal diffusivity values of these samples. A linear variation in switching voltages (also known as threshold voltages) (Vt) has been found with increase in thickness. The switching voltages have been found to decrease with an increase in temperature which is due to the decrease in the activation energy for crystallization at higher temperatures. Further, Vt of Ge18Te82-xBix glasses have been found to decrease with the increase in Bi content, indicating that in the Ge-Te-Bi system, the resistivity of the additive has a stronger role to play in the composition dependence of Vt, in comparison with the network connectivity and rigidity factors. In addition, the composition dependence of crystallization activation energy has been found to show a decrease with an increase in Bi content. X-ray diffraction studies on thermally crystallized samples reveal the presence of hexagonal Te, GeTe and Bi2Te3 phases. The fifth chapter deals with the electrical switching studies and optical band gap measurements on GexSe35-xTe65 (17 ≤ x ≤ 23) amorphous thin film samples. These thin film samples coated with sandwich geometry are found to switch with very low voltages as compared to bulk samples of the same chalcogenide glasses. The switching voltages and optical band gap are found to increase with the addition of Ge at the expense of Se. High structural cross linking with progressive addition of 4-fold coordinated Ge atoms could be the one of the reasons of increasing switching voltage and stronger Ge-Se bond strength could be the reason of increasing band gap for these chalcogenide glasses. In chapter 6, electrical switching studies on amorphous Ge15Te85-xSix (1 ≤ x ≤ 6) thin film samples have been described and the results are compared with their bulk counterparts. Similar trend has been found for both bulk and film samples when the threshold field is varied with composition. Optical band gap has been measured as a function of composition for these films, which also shows a behavior similar to that of switching voltages. The increasing trend in the variation with composition of electrical switching voltages and optical band gap are due to the increase in network connectivity and rigidity as Si atoms are incorporated into the Ge-Te system. Chapter 7 summarizes the electrical switching and glass forming ability of the Ge-Te-Sn glasses of two different composition tie-lines, namely Ge15Te85-xSnx and Ge17Te83-xSnx. Glasses belonging to both the series have been found to exhibit memory type of electrical switching behavior. The thickness dependence of threshold voltages is also found to support the memory switching behavior of the system. Further, ADSC studies are undertaken to explore the thermal behavior of these glasses which indicates that the crystallization tendency increases as Sn concentration is increased in the Ge-Te network. XRD studies done on two samples from both the series, reveal the fact that Sn atoms do not take part actively to enhance the network connectivity and rigidity. The composition dependence of crystallization temperature, metallicity factor and results of XRD studies are put together to explain the variation with composition of threshold voltages for both the series of samples. In chapter 8, investigations on the electrical switching behavior of Ge15Te85-xSnx (1 ≤ x ≤ 5) and Ge17Te83-xSnx (1 ≤ x ≤ 4) amorphous thin films have been discussed. Both the series of samples have been found to exhibit memory type of electrical switching behavior. The composition dependence of threshold voltage shows a decreasing trend, which has been explained on the basis of the Chemically Ordered Network (CON) model, bond strength and the metallicity factor. The optical band gap variation of both the series also exhibits a similar decreasing trend with composition. The observed behavior has been understood on the basis of higher atomic radius of Sn atom than Ge atom, which makes the energy difference between bonding and anti bonding state less at band edge. Chapter 9 deals with the nano-indentation studies on Ge15Te85-xSix (0 ≤ x ≤ 9) bulk glasses. The composition dependence of young’s modulus and hardness is studied systematically in this glassy system. The density of the samples of different compositions has also been measured, which strongly supports the variation of Young’s Modulus and hardness with composition. The composition dependence of mechanical properties of Ge-Te-Si samples has been understood on the basis of the presence of an intermediate phase and a thermally reversing window in this glassy system. A summary of the significant results obtained in the present thesis work is presented in the last chapter along with the scope for future work.

Climate change is a subject of deep distress in today’s world. Over dependence on hydrocarbon has resulted in serious environmental problems. Rising sea level, global warming and ozone layer depletion are the mainstream of any discuss world over. The collective goal of cutting carbon emission by the year 2020has prompted the search for clean, alternative energy sources. This effort are already yielding good reward as other forms of energy such as solar, wind, nuclear and hydro have received huge investment and renew interest over the past decade. Thermoelectric materials over the past decades have been tipped to replace conventional means of power generations as these materials have the ability to convert heat to electrical energy and vice versa. They are simple, have no moving parts and use no greenhouse gases. But the major drawback of these materials is their low conversion efficiency. Hence there is a need to enhance the efficiency of thermoelectric material to fulfill their undeniable potentials. A parameter called the thermoelectric figure of merit, ZT defines the efficiency of a thermoelectric material. ZT relates three non-mutually exclusive transport properties namely Seebeck coefficient, electrical conductivity and thermal conductivity. Efficient thermoelectric material should possess high Seebeck coefficient, high electrical conductivity and low thermal conductivity. Hence, one of the interesting ideas in the area of thermoelectric research is the concept of designing a bulk material with high density of phonon scattering centers so has to reduce the lattice contribution to thermal conductivity but at the same time have minimum impact oncharge carriers. This is usually achieved by utilizing interphase and grain boundaries which are localized defects to scatter phonons. The volume fraction of the grain/interphase boundaries can be control through phase modification and microstructure design. This thesis is centered on Bi-Sb-Te systems which are the present room temperature state of the earth thermoelectric material. The investigation revolves around developing a new kind of microstructure in the well-studied Bi-Sb-Te system that shows tremendous potential as a means to reduce lattice contribution to thermal conductivity. The idea of having both p and n-type thermoelectric material preferably from the same material was also a motivation in our investigation. The thesis isdivided into six chapters. The first chapter introduces the concept of thermoelectricity i.e. the direct conversion of thermal energy into electricity. The physics involved and contribution of individual to the science of thermoelectricity were enumerated. Efficiency, optimization and material selection for better thermoelectric performance were briefly enumerated. Prospective materials that are currently been investigated for better thermoelectric properties were also mentioned. The structure of the Bi-Sb-Te system which is the focus of this thesis is present in this chapter including doping effect on the thermoelectric performance of the system as well as the various methods present been employed to improve the thermoelectric properties of the system. Finally the chapter enumerates the scope and object of the present thesis. The different experimental procedures adopted in the present thesis arediscussed in chapter 2. The details of different processing routes followed to synthesize flame-melted ingots, flame-melted + low temperature milled (cryo milling) + spark plasma sintering (SPS) alloy and flame-melted + melt spinning + spark plasma sintering (SPS) alloy, are discussed followed by the various structural and functional characterization techniques. The unique advantage of the spark plasma sintering techniques over the conventional sintering method was talked out in detail. The structural characterizations performed on the synthesized alloys include XRD, SEM and whilethe functional characterizations comprised of Hall measurement, Seebeck coefficient, electrical resistivity and thermal conductivity measurements. Thermoelectric properties of selected composition of Bi-Sb-Te synthesized via flame-melting are presented in chapter 3.Detail study of four analyzed compositions namelyBi24Sb20Te56, Bi20Sb12Te69, Bi16Sb5Te79 and Bi29Sb11Te60resulted in four unique microstructure and different volume fraction of primary and secondary phases. The resultant morphologies of the microstructure were observed to have influence the thermoelectric behavior corresponding to each composition. The sole influence of anti-structural defects on the conductivity type and the role of microstructure morphologies and length scale were understood in this chapter. Samples with segregated Te and a solid solution BiSbTe3(eutectic morphology) form an n-type thermoelectric material while samples with only solid solution BiSbTe3 forms a p-type thermoelectric material. Pair of n-type and p-type material was obtained without the introduction of external dopant.The pair shows good compatibility factorsuitable for thermoelectric device. In chapter 4, the thermoelectric properties of four selected composition of Bi-Sb-Te synthesized via low temperature milling plus spark plasma sintering is addressed. The analyzed compositions are as follows Bi24Sb20Te56, Bi18Sb11Te71, Bi17Sb6Te77, and Bi28Sb15Te57 respectively. The effect of low temperature milling combine with the prospect of minimum grain growth of spark plasma sintering on the thermoelectric properties of the selected compositions were determined. Samples with eutectic morphology which would otherwise scatter charge carriers were observed to have the highest carrier mobility as a result of high volume fraction of Te phase which serves as a donor injecting excess electrons into the system. The impact of small grain size was observed on the transport properties of the sample Bi28Sb15Te57 with the highest electrical resistivity, the best Seebeck coefficient and the lowest thermal conductivity. Pair of n-type and p-type material was obtained without the introduction of external doping elements. The pairshows good compatibility factor suitable for segmented thermoelectric device. Chapter 5 narrates the thermoelectric properties of four compositions namely Bi30Sb13Te58, Bi23Sb13Te65, Bi18Sb5Te77 and Bi23Sb20Te58subjected to melt spinning plus spark plasma sintering.High cooling rate obtained during melt spinning process was observed in this chapter to cause a shift of composition which resulted in a microstructure morphology with eutectic colonies that is predominantly Te rich. These Te rich colonies in the sample Bi30Sb13Te58 was observed to change the conductivity type of the sample from an otherwise p-type to n-type while also aiding bipolar conduction which was detrimental to the overall thermoelectric performance of the alloy. Segregated Te in the form of eutectic morphology helps to inject excess electron into the bulk of the sample Bi23Sb13Te65 and Bi18Sb5Te77hereby increases the observed electrical conductivity which by virtue of the microstructure morphology is expected to be low. As a result of the processing routes, all four compositions in this chapter shown-type conductivity. Chapter 6 presents the summary of the important conclusions drawn from this work.

The presented thesis deals with UV-photochemical generation of volatile compounds of Se and Te from various species. The aim of the project was to expand the current state of knowledge by the application of photocatalytic reduction of higher oxidation states of Se and Te for the speciation analysis based on UV-photochemical generation of volatile compounds. The first step of the study was the assembly of the apparatus for the photocatalysed UV-photochemical generation of volatile compounds. The material of reactor and the whole experimental set-up were based on literature survey and previous research done in our research group. Experiments were directed towards finding the optimum conditions for generation of volatile compounds of selected model elements Se and Te. Se was studied as the element most commonly determined by the UV-photochemical generation of volatile compounds. Conversely, Te was selected as a model analyte representing elements forming less stable volatile compounds. The second part was the application of the optimised method of photocatalysed UV- photochemical generation of volatile Se compound to the determination of Se in water matrices, liquid certified reference materials and also samples of dietary supplements. TiO2/UV-photochemical generation was also successfully modified to...

GeTe and Ge2Sb2Te5 alloys are potential candidates for non-volatile phase change random access memories (PCRAM). For electrical data storage applications the materials should have stable amorphous and crystalline phases, fast crystallization time, low power to switch, and high crystallization activation energy (to be stable at normal operating temperatures). Phase change memories can be tuned through compositional variations to achieve sufficient phase change contrast and thermal stability for data retention. Selenium is one of the attractive choices to use as an additive material owing to its flexible amorphous structure and a variety of possible applications in optoelectronics and solar cells. GeSb2Te3Se alloy, in which 25 at.% of Se substituted for Te, show a higher room temperature resistance with respect to parent GeSb2Te4 alloy, but the transition temperature is lowered which will affect the thermal stability. The RESET current observed for Sb65Se35 alloys were reduced and the crystallization speed increased 25 % faster with respect to Ge2Sb2Te5. Alloys of Ga-Sb-Se possess advantages such as higher crystallization temperatures, better data retention, higher switching speed, lower thermal conductivity and lower melting point than the GST, but the resistance ratio is limited to about two orders of magnitude. This affects the resistance contrast and data readability. It is with this background a study has been carried out in GeTe and GeSbTe system with Se doping. Studies on structural, thermal and optical properties of these materials all through the phase transition temperatures would be helpful to explore the feasibility of phase change memory uses. Thin films along with their bulk counterparts such as (GeTe)1-x Sex ( 0 < x ≤ 0.50) and (GST)1-xSex (0 < x ≤ 0.50), including GeTe and GST alloys, have been prepared. The results are presented in four chapters apart from the Introduction and Experimental techniques chapters. The final chapter summarizes the results. Chapter 1 provides an introduction to chalcogenide glasses, phase change memory materials and their applications. The fundamental properties of amorphous solids, basic phase change properties of Ge2Sb2Te5 and GeTe alloys and their applications are presented in detail. Various doping studies on GeTe and Ge2Sb2Te5 reported in literatures are reviewed. The limitations, challenges, future and scope of the present work are presented. In chapter 2, the experimental techniques used for thin film preparation, electrical characterizations, optical characterization and surface characterizations etc. are explained. Chapter 3 deals entirely on Ge2Sb2Te5 films studied throughout the phase transition, by annealing at different temperatures. Changes in sheet resistance, optical transmission, morphology and surface bonding characteristics are analyzed. The crystallization leads to an increase of roughness and the resistance changes to three orders of magnitude at 125 oC. Optical studies show distinct changes in transmittance during phase transitions and the optical parameters are calculated. Band gap contrast and disorder variation with annealing temperatures are explained. The surface bonding characteristics studied by XPS show Ge-Te, Sb-Te bonds are present in both amorphous and crystalline phases. The temperature dependent modifications of the band structure of amorphous GST films at low temperatures have been little explored. The band gap increment of around 0.2 eV is observed at low temperature (4.2 K) compared to room temperature 300 K. Other optical parameters like Urbach energy and B1/2 are studied at different temperatures and are evaluated. The observed changes in optical band gap (Eopt) are fitted to Fan’s one phonon approximation, from which a phonon energy (ћω) corresponding to a frequency of 3.59 THz resulted. The frequency of 3.66 THz optical phonons has already been reported by coherent phonon spectroscopy experiment in amorphous GST. This opens up an indirect method of calculating the phonon frequency of the amorphous phase change materials. Chapter 4 constitutes comparison of optical, electrical and structural investigation of GST and (GST)1-xSex films. It is well known that GST alloys have vacancy in their structure, which leads to the possibility of switching between the amorphous and crystalline states with minimum damage. Added Se may occupy the vacancy or change the bonding characteristics which intern may manifest in the possibility of change in optical and electrical parameters. The structural studies show a direct amorphous to hexagonal transition in (GST)1-xSex, where x ≥ 0.10 at.%. Raman spectra of the as deposited and annealed (GST)1-xSex films show structural modifications. The infrared transmission spectra indicate a shift in absorption edges from low to high photon energy when Se concentration increases in GST. Band gap values calculated from Tauc plot show the band gap increment with Se doping. It is noted that a small amount of Se doping increases the resistance of the amorphous and crystalline phases and maintains the same orders of resistance contrast. This will be beneficial as it improves the thermal stability and reduces the write current in a device. Switching studies show an increasing threshold voltage as the Se doping concentration increases. Chapter 5 comprises compositional dependent investigations of the bulk GeTe chalcogenides alloys added with different selenium concentrations. The XRD investigations on bulk (GeTe)1-xSex (x = 0.0, 0.02, 0.10, 0.20 and 0.50 at.%) alloys show that the crystalline structure of GeTe alloys does not affect ≤ 0.20 at.% of Se concentration. With increasing amount of Se concentration the alloys gets modified in to a homogeneous amorphous structure. This result has been verified from the XRD, Raman, XPS, SEM and DSC measurements. The possibility that Se occupying the Ge vacancy sites in GeTe structure is explained. Since Se is an easy glass former, the amorphousness increases in the alloys due to new amorphous phases formed by the Se with other elements. It is shown from Raman and XPS analysis that the Ge-Te bonds exists up to Se 0.20 at.% alloys. Ge-Se and GeTe2 bonds are increasing with increasing Se at.%. Melting temperature has found decreases and the reduction in melting point may reduces the RESET current. Further studies on switching behavior may bring out its usefulness. Chapter 6 deals with studies on (GeTe)1-xSex films for phase change memory applications based on the insight received from their bulk study. Even at low at.% addition of Se makes the as prepared (GeTe)1-xSex film amorphous. At 200 oC, GeTe crystalline structure is evolved and the intensity of the peaks reduces in the alloys with increase of Se content. At 300 oC, more evolved GeTe crystalline structure is seen compared to 200 oC annealed films whereas 0.20 at.% Se alloy remain amorphous. Resistance and thermal studies shows increase in crystallization temperature. It is expected that Se sits in the vacancies of the GeTe crystalline structural formation. This may also account for the increased threshold voltages with increasing Se doping. The band gap increase with increase of Se at.% signifying the possibility of band gap tuning in the material. Possible explanation for the increased order in GeTe due to Se doping is presented. The modifications in the alloy with Se addition can be explained with the help of chemical bond energy approach. Those bonds having higher energy leads to increased average bond energy of the system and hence the band gap. The XPS core level spectra and Raman spectra investigation clearly shows the GeTe bonds are replaced by Ge-Se bonds and GeTe2 bonds. The 0.10 at.% Se alloy is found to have a higher thermal stability in the amorphous state and maintains a gigantic resistance contrast compared to other Se concentration alloys. This alloy can be considered as an ideal candidate for multilevel PCM applications. Chapter 7 summarizes the major findings from this work and the scope for future work.

The semiconducting compounds CdTe and CdZnTe have important applications in high-energy radiation detectors and as substrates for infrared devices. The materials offer large band gaps, high resistivity, and excellent charge transport properties; however all of these properties rely on very precise control of the material composition. Growing bulk crystals by the travelling heater method (THM) offers excellent compositional control and fewer defects compared to gradient freezing, but it is also much slower and more expensive. A particular challenge is the current need to grow new crystals onto existing seeds of similar size and quality. Simulations and experiments are used in this work to investigate the feasibility of growing these materials by THM without the use of large seed crystals. A new fixed-grid, multiphase finite element model was developed based on the level set method and used to calculate the mass transport regime and interface shapes inside the growth ampoule. The diffusivity of CdTe in liquid tellurium was measured through dissolution experiments, which also served to validate the model. Simulations of tapered THM growth find conditions similar to untapered growth with interface shapes that are sensitive to strong thermosolutal convection. Favourable growth conditions are achievable only if convection can be controlled. In preliminary experiments, tapered GaSb crystals were successfully grown by THM and large CdTe grains were produced by gradient freezing. Beginning with this seed material, 25 mm diameter CdTe and CdZnTe crystals were grown on 10 mm diameter seeds, and 65 mm diameter CdTe on 25 mm seeds. Unseeded THM growth was also investigated, as well as ampoule rotation and a range of thermal conditions and ampoule surface coatings. Outward growth beyond one or two centimeters was achieved only at small diameters and included secondary grains and twin defects; however, limited outward growth of larger seeds and agreement between experimental and numerical results suggest that tapered growth may be achievable in the future. This would require active temperature control at the base of the crystal and reduction of convection through thermal design or by rotation of the ampoule or applied magnetic fields. / Graduate / 0346 / 0794 / 0548 / jordan.roszmann@gmail.com

Ferroelectric materials are very promising for a variety of applications such as high-permittivity capacitors, ferroelectric memories, pyroelctric sensors, piezoelectric and electrostrictive transducers and electro-optic devices, etc. In the area of ferroelectric ceramics, lead-based compounds, which include lead zirconatetitanate (PZT) solid solutions, occupy an important place because of their superior physical properties. However, due to the toxicity of lead, there is an increasing concern over recycling and disposing of the devices made out of these compounds, which has compelled the researchers around the globe to search for lead-free compounds with promising piezo and ferroelectric properties. Ferroelectric materials that belong to Aurivillius family of oxides have become increasingly important from the perspective of industrial applications because of their high Curie-temperatures, high resistivity, superior polarization fatigue resistanceand stable piezoelectric properties at high temperatures. These bismuth layer-structured ferroelectrics (BLSF) comprise an intergrowth of [Bi2O2]2+ layers and [An+1Bn O3n+1]2- pseudo-perovskite units, where ‘n’ represents the number of perovskite-like layers stacked along the c-axis. ‘A’ stands for a mono-, di- or trivalent ions or a combination of them, ‘B’ represents a small ion with high valencysuch as Ti4+, Nb5+, Ta5+or a combination of them.Ferroelectricity in the orthorhombic phase of these compounds was generally attributed to the cationic displacement along the polar a-axis and the tilting of octahedra around the a- and c-axes. Sr2Bi4Ti5O18(SBT) is ann = 5 member of the Aurivillius family and possess promising ferroelectric and piezoelectric properties that could be exploited for a wide range of applications, including ferroelectric random access memories (FeRAM), piezoelectric actuators, transducers and transformers. Reports in the literaturereveal that the ferroelectricand piezoelectric properties of these oxides can be tuned depending on synthesis routes vis-a-vis micro-structural aspects (texture, grain size) and site specific dopant substitutions.In the present study, textured SBT ceramics were fabricated using pre-reacted precursors and their anisotropic dielectric, piezoelectric and ferroelectric properties were demonstrated. Grain size tunability with regard to their physical properties was accomplished in the ceramics, fabricated using fine powders obtained from citrate assisted sol-gel synthesis. The grain size dependent second harmonic generation activity of SBT ceramics was investigated. Enhancement in the piezoelectric and ferroelectric properties of SBT ceramics was achieved by substituting A site ions (Sr2+) with a combination of Na+ and Bi3+. From the perspective of non-linear optical device applications, physical properties associated with the SBT crystallized in a transparent lithium borate glass matrix were studied. The results obtained in the present investigations are organized as follows, Chapter 1 gives a brief exposure to the field of ferroelectrics. The emphasis has been on the ferroelectric oxides belonging to the Aurivillius family. Structural aspects and the underlying phenomena associated with ferroelectricity in these compounds are discussed. A brief introduction to the glasses, thermodynamic aspects of glass formation and fabrication of glass- ceramics are included. Basic principles involved in the non-linear optical activities are highlighted. Chapter 2 describes the various experimental techniques that were employed to synthesize and characterize the materials under investigation. The experimental details pertaining to the measurement of various physical properties are included. Chapter 3 deals with the fabrication of Sr2Bi4Ti5O18 ceramics using the pre-reacted Bi4Ti3O12 and SrTiO3 powders viasolid-state reaction route. These in stoichiometric ratio were uniaxially pressed and sintered at 1130oC for 3 h resulting in textured Sr2Bi4Ti5O18 ceramics. The obtained dense ceramics exhibited crystallographic anisotropy with prominent c-axis oriented grains (Lotgering factor of 0.62) parallel to the uniaxially pressed direction. The resultant anisotropy in the ceramics was attributed to the reactive template-like behavior of Bi4Ti3O12 that was used as a precursor to fabricate Sr2Bi4Ti5O18 ceramics. Dielectric, ferro and piezoelectric properties measured on the ceramics in the direction perpendicular to the uniaxially pressed axis were found to be superior to that measured in the parallel direction. Chapter 4 reports the details pertaining to the synthesis of strontium bismuth titanate (Sr2Bi4Ti5O18) powders comprising crystallites of average sizes in the range of 94–1400 nm via citrate-assisted sol-gel route. X-ray powder diffraction, Transmission Electron Microscopy (TEM) and Raman spectroscopy were employed for the structural studies. A crystallite size-dependent variation in the lattice parameters and the shift in the Raman vibration modes were observed. Second harmonic signal (532 nm) intensity of the Sr2Bi4Ti5O18 powders increased with the increase in the average crystallite size and the maximum intensity obtained in the reflection mode was 1.4 times as high as that of the powdered KH2PO4. Piezo force microscopic analyses carried out on an isolated crystallite of size 74 nm, established its single domain nature with the coercive field as high as 347 kV/cm. There was a systematic increase in the d33 value with an increase in the size of the crystallite and a high piezoelectric coefficient of ~27 pm/V was obtained from an isolated crystallite of size 480 nm. Chapter 5 illustrates the details concerning the fabrication of Sr2Bi4Ti5O18(SBT) ceramics with different grain sizes (93 nm–1.42 μm) using nano-crystalline powders synthesized via citrate assisted sol-gel method. The grain growth in these powder compacts was found to be controlled via the grain boundary curvature mechanism, associated with anactivation energy of 181.9 kJ/mol. Interestingly with a decrease in grain size there was an increase in the structural distortion which resulted in a shift of Curie-temperature (phase transition) towards higher temperatures than that of conventional bulk ceramics. Extended Landau phenomenological theory for the ferroelectric particles was invoked to explain experimentally observed size dependent phase transition temperature and the critical size for SBT is predicted to be 11.3 nm. Grain size dependent dielectric, ferroelectric and piezoelectric properties of the SBT ceramics were studied and the samples comprising average grain size of 645 nm exhibited superior physical properties that include remnant polarization (2Pr) = 16.4 μC cm-2, coercive field (Ec) = 38 kV cm-1, piezoelectric coefficient (d33) = 22 pC N-1 and planar electromechanical coupling coefficient (kp) = 14.8 %. In Chapter 6, the studies pertaining to the fabrication of Sr(2-x)(Na0.5Bi0.5)xBi4Ti5O18 (SNBT) ceramics for various x values (0, 0.1, 0.25, 0.3, 0.4 and 0.5), using fine powders synthesized via sol-gel route are dealt with. X-ray powder diffraction, transmission electron microscopy and Raman spectroscopic studies were carried out to confirm composition dependent structural changes taking place in the SNBT ceramics. Scanning electron microscopic studies carried out on ceramics revealed that dopants played an important role in inhibiting the grain growth. Dielectric constants of the ceramics were found to decrease with an increase in ‘x’. The increase in Curie temperature with increase in ‘x’ is attributed to the decrease in the tolerance factor. Particularly,x = 0.3 composition of the SNBT ceramics exhibited better piezo and ferroelectric properties with a higher Curie-temperature (569 K). The piezoelectric coefficient (d33) and the planar electromechanical coupling coefficient (kp) of SNBT(x = 0.3) were enhanced by 25% and 42% respectively as compared to that of the undoped ceramics. Chapter 7 deals with the glasses in the system (100 –x) {Li2O + 2B2O3} ─x {2SrO + 2Bi2O3 +5TiO2} (where, x = 10, 25 and 35) fabricated via conventional melt-quenching technique. The amorphous and glassy characteristics of the samples were confirmed respectively using X-ray diffraction (XRD) and differential scanning calorimetric (DSC) methods. All the compositions under investigation exhibited two distinct crystallization peaks (exothermic peaks in the DSC traces): the first peak at ~ 545 °C and the second at ~610 °C that were found to be associated with the crystallization of the phases (as confirmed from the XRD studies) Sr2Bi4Ti5O18 (SBT)and Li2B4O7 (LBO) respectively. Non-isothermal crystallization kinetics (using modified Ozawa-type plots) for SBT crystallization in the LBO glass matrix for the compositions x = 10 and 35, indicated three dimensional growth of the crystallites from pre-existing nuclei present in the as-quenched samples and their effective activation energies for crystallization were found to be around 686 ± 85 kJ/mol and 365 ± 53 kJ/mol, respectively. The optical band gap of the as-quenched glasses for the composition x = 35 was 2.52 eV, is less than that of the composition x = 10 (2.91 eV). The Urbach energies for the as-quenched glasses of compositions x = 10, 25 and 35 were found to be 118 ± 2 meV, 119 ± 2 meV and 192 ± 1 meV respectively.The glasses associated with the composition x = 35, on controlled heat-treatment at 515 °C for various durations (1―20 h), yielded glass-ceramics comprising SBT nano-crystals (18―28 nm) embedded in the LBO glass matrix. Compressive strain in the nano-crystallites of SBT, analyzed using Williamson-Hall method was found to decrease with an increase in the crystallite size. The second harmonic generation signal (532 nm) intensity emanating from glass-nanocrystal composites comprising 22.1 nm SBT crystallites was nearly 0.3 times that of a KDP single crystal. Although each chapter is provided with conclusions and a list of references, thesis ends with a separate summary and conclusions.

Conductive polymers are also known as "organic metals" due to their semiconducting properties. They are found in a wide range of applications in the field of organic electronics. However, the growing number of experimental works is not widely supported with theoretical calculations. Hence, the field of conductive polymers is experiencing lack of understanding of mechanisms occurring in the polymers. In this PhD thesis, the aim is to increase understanding of conductive polymers by performing theoretical calculations.        The polymers poly(3,4-ethylenedioxythiophene) (PEDOT) together with its selenium (PEDOS) and tellurium (PEDOTe) derivatives, poly(p-phenylene) (PPP) and naphthobischalcogenadiazoles (NXz) were studied. Several computational methods were applied for analysis of mentioned structures, including density functional theory (DFT), tight-binding modelling (TB), and Car-Parrinello molecular dynamics (CPMD) calculations. The combination of CPMD and DFT calculations was applied to investigate the PEDOT, PEDOS and PEDOTe. The polymers were studied using four different functionals in order to investigate the full picture of structural changes, electronic and optical properties. Temperature effects were studied using molecular dynamics simulations. Wide statistics for structural and molecular orbitals analysis were collected.         The TB method was employed for PPP. The formation and motion of the excitations, polarons and bipolarons, along the polymer backbone was investigated in presence of electric and magnetic fields. The influence of non-magnetic and magnetic impurities was determined.        The extended π-conjugated structures of NXz were computed using B3LYP and ωB97XD functionals in combination with the 6-31+G(d) basis set. Here, the structural changes caused by polaron formation were analyzed. The combined analysis of densities of states and absorption spectra was used for understanding of the charge transition. / <p>QC 20170928</p>

<div>Inorganic metal chalcogenide materials are of great importance in the semiconducting field for various electronic applications such as photovoltaics, thermoelectrics, sensors, and many others. Compared to traditional vacuum processing routes, solution processing provides an alternate cost-effective route to synthesize these inorganic materials through its ease of synthesis and device fabrication, higher material utilization, mild processing conditions, and opportunity for roll-to-roll manufacturing. One such versatile solution chemistry involving a mixture of amine and thiol species has evolved in the past few years as a common solvent for various precursor dissolutions including metal salts, metal oxides, elemental metals, and chalcogens.</div><div><br></div><div>The amine-thiol solvent system has been used by various researchers for the fabrication of inorganic materials, but without the complete understanding of the chemistry involved in this system, utilizing its full potential, and overcoming any inherent limitations will be difficult. So, to identify the organometallic complexes and their reaction pathways, the precursor dissolutions in amine-thiol solutions, specifically for elemental metals like Cu, In and chalcogens like Se, Te were studied using X-ray absorption, nuclear magnetic resonance, infrared, and Raman spectroscopy along with electrospray ionization mass spectrometry techniques. These analyses suggested the formation of metal thiolate complexes in the solution with the release of hydrogen gas in the case of metal dissolutions confirming irreversibility of the dissolution. Insights gained for chalcogen dissolutions confirmed the formation of different species like monoatomic or polyatomic clusters when different amine-thiol pair is used for dissolution. Results from these analyses also identified the role of each component in the dissolution which allowed for tuning of the solutions by isolating the complexes to reduce their reactivity and corrosivity for commercial applications.</div><div><br></div><div>After identifying complexes in metal dissolution for Cu and In metals, the decomposition pathway for these complexes was studied using X-ray diffraction and gas chromatography mass spectrometry techniques which confirmed the formation of phase pure metal chalcogenide material with a release of volatile byproducts like hydrogen sulfide and thiirane. This allowed for the fabrication of impurity-free thin-film Cu(In,Ga)S2 material for use in photovoltaic applications. The film fabrication with reduced carbon impurity achieved using this solvent system yielded a preliminary promising efficiency beyond 12% for heavy alkali-free, low bandgap CuInSe2 material. Along with promising devices, by utilizing the understanding of the chalcogen complexation, a new method for CuInSe2 film fabrication was developed with the addition of selenide precursors and elemental selenium which enabled first-ever fabrication of a solution-processed CuInSe2 thin film with thickness above 2 μm and absence of any secondary fine-grain layer.</div><div><br></div><div>Along with thin-film fabrication, a room temperature synthesis route for lead chalcogenide materials (PbS, PbSe, PbTe) with controlled size, shape, crystallinity, and composition of nanoparticle self-assemblies was demonstrated. Micro-assemblies formed via this route, especially the ones with hollow-core morphology were subjected to a solution-based anion and cation exchange to introduced desired foreign elements suitable for improving the thermoelectric properties of the material. Adopting from traditional hot injection and heat up synthesis routes, a versatile synthesis procedure for various binary, ternary, and quaternary metal chalcogenide (sulfide and sulfoselenide) nanoparticles from elemental metals like Cu, Zn, Sn, In, Ga, and Se was developed. This new synthesis avoids the incorporation of impurities like O, Cl, I, Br arising from a traditional metal oxide, halide, acetate, or other similar metal salt precursors giving an opportunity for truly impurity-free colloidal metal chalcogenide nanoparticle synthesis.</div>