Grain boundary processes play a major role in controlling different rate processes in yttria stabilized tetragonal zirconia. The present study concentrated on rate processes in tetragonal zirconia, which were significantly influenced by the grain boundary processes. In this present study, nanocrystalline zirconia with grain size as low as 66 nm and density as high as 98.5% was processed using a two steps sintering-sinterforging process in the temperature range of 1473K to 1373K. Significant suppression of grain growth was noted in the second step of the two step process. It was observed that two step sintering-sinterforging process can reduce the processing time by an order of magnitude compared to the two step sintering process. A high grain size dependency of 3.3 indicated grain boundary controlled process dominating this technique. The dense nanocrystalline zirconia was used for microstructural and deformation characterization. An influence of electric field on grain growth behaviour was studied by annealing the specimens at 1573K for 10 hours under an applied field of 4 V/cm to 80 V/cm. It was noticed that grain growth was significantly retarded under a very weak field and the magnitude of retardation dependent on the applied voltage, an extensive grain growth was observed on the other occasion when the applied voltage crossed the threshold value of 3.5V. It was proposed that electrical boundary resistance provides minima in the grain boundary energy during annealing and that retards the grain growth. This technique presented a huge potential application in ceramic processing involving rate process. Again the grain boundary process was reported to control this phenomenon. Low temperature creep properties of nanocrystalline zirconia were investigated in great detail in the present study. Grain boundary sliding was noted as the mode of deformation at 1423 K. Study on the specimens with wide range of grain sizes (65 nm to ~0.4 µm) suggested that the deformation mechanism of the nanograin is similar to that of the submicron grain zirconia. A study on the segregation of yttrium ions to the grain boundaries showed that the segregation behaviour of nanograin and submicron grain 3YTZ was similar, which again indicated towards the possibility of nanocrystalline tetragonal zirconia to be superplastic as the scaling law was applicable from submicron to nanocrystalline 3YTZ. Grain boundary sliding is the mode of deformation of 3YTZ at high temperatures. This study aimed at understanding the influence of grain boundary sliding on rate processes at the boundary namely grain boundary diffusion. Grain boundary diffusivity of the deformed specimens was measured using secondary ion mass spectroscopy. The study revealed that the sliding process is much slower compared to the atomic jumps causing grain boundary diffusion, hence no significant influence of the grain boundary sliding on grain boundary diffusion was observed. This present study demonstrated new techniques which have a huge potential application in processing ceramics at low temperatures. This study also developed an understanding of the grain boundary processes which involved in low temperature rate processes of nanocrystalline zirconia.

La structure bronze quadratique de tungstène, grâce à sa flexibilité cristallochimique, est une candidate légitime pour le développement de matériaux fonctionnels. L’étude des propriétés diélectriques, pyroélectriques, et ferroélectriques de céramiques de formulation Ba2NdFeNb4-xTaxO15 montre un crossover relaxeur-ferroélectrique-paraélectrique, avec une hystérèse thermique de la transition ferroélectrique. L’étude structurale des monocristaux relaxeurs Ba2LnFeNb4O15 (Ln=La, Pr, Nd, Sm, Eu), obtenus par la méthode du flux, a mis en évidence une structure modulée. L’affinement de la structure de base prouve l’existence de moments dipolaires dans le plan ab (dus à une distorsion des octaèdres [NbO6]). Afin d’établir un lien entre la structure cristalline et les propriétés d’un composé dérivé du multiferroïque MnWO4, la croissance en four à image de Mn0,85Mg0,15WO4 a été entreprise avec succès. / Tetragonal Tungsten Bronze structure, thanks to its compositional flexibility, is a legitimate candidate for the development of functional materials. Study of dielectric, pyroelectric, and ferroelectric properties of Ba2NdFeNb4-xTaxO15 ceramics reveals a relaxor-ferroelectric-paraelectric crossover, with thermal hysteresis of the ferroelectric transition. Structural analysis of Ba2LnFeNb4O15 (Ln=La Pr, Nd, Sm, Eu), relaxor single crystals obtained by flux method, highlighted a modulated structure. Refinement of the basic structure proves the existence of a dipolar moment in the ab plane (induced by a distortion of [NbO6] octahedra). In order to establish a correlation between the crystal structure and the properties of a compound derived from multiferroic MnWO4, the crystal growth in image furnace of Mn0,85Mg0,15WO4 was successfully undertaken.

In this work, in-depth structural and electrical characterisation is used to study a family of “empty” tetragonal tungsten bronzes (TTBs), A2₄A1₂B1₂B2₈O₃₀. An initial investigation into the effect of the A1-cation size on the properties of empty Ba₄R₀.₆₇◻₁.₃₃Nb₁₀O₃₀ TTBs (where R is the A1-cation and R = La, Nd, Sm, Gd, Dy and Y; ◻ = vacancy) was performed. These were determined to be metrically tetragonal by powder x-ray diffraction, with decreasing R cation size inducing increased crystal anisotropy. This tetragonal structural distortion, driven by contraction in the ab-plane, is shown to stabilise c-axis ferroelectricity; a direct correlation between tetragonality and the ferroelectric Curie temperature, T[sub]C, is demonstrated. Further examination of the relaxor ferroelectric (RFE) to ferroelectric (FE) crossover in Ba₄(La₁₋ₓNdₓ)₀.₆₇◻₁.₃₃Nb₁₀O₃₀ TTBs using detailed structural studies employing variable temperature, high resolution neutron, synchrotron X-ray and electron diffraction revealed a common superstructure with 2√2 × √2 × 2 cell with respect to the basic tetragonal aristotype cell. However, they display different degrees of order/disorder which can disrupt polar order (ferroelectricity). La-rich analogues exhibit a disordered regime between the low and high temperature ferroelectric and non-polar phases. Although polar, this disordered regime is non-ferroelectric, however, large polarisation may be established with an applied electric field, but relaxes back to the disordered phase upon removal of the field. Substitution of Nd for La at the A1-site leads to destabilisation of the disordered phase and reintroduces “normal” ferroelectric behaviour. Finally, isovalent substitution of Sr²⁺∙ for Ba²⁺ is shown to lead to the development of relaxor behaviour at higher dopant concentrations in Ba₄₋ₓSrₓDy₀.₆₇◻₁.₃₃Nb₁₀O₃₀, (x = 0, 0.25, 0.5, 1, 2, 3; ◻ = vacancy). With increasing x the unit cell contracts in both the ab- plane and c-axis coinciding with a decrease in T[sub]C and development of relaxor behaviour for x ≥ 2. This observation is rationalised by differing cation occupancies: for x ≤ 1, Sr²⁺ principally occupies the A2-site while for x ≥ 2 significant Sr²⁺ occupation of the A1-site leads to the observed RFE characteristics. The FE to RFE crossover is discussed in the context of a previously proposed TTB crystal chemical framework with the A1-site tolerance factor identified as the dominant influence on relaxor behaviour.

One third of world’s total energy is used in production of electricity and one fifth of the total electricity produced in the world is used in lighting. Hence, the materials that have high potential in the field of photovoltaic’s and photoluminescence have recently drawn special attention to meet the ever increasing energy demands. In this thesis, we have studied a few materials that hold tremendous promises in fabricating photovoltaics and photoluminescent devices. Any ferroelectric material is an efficient solar energy converter as it contains an the intrinsic dipolar field which can effectively separate the photo excited electron and hole. We have developed a few materials which possess inherent polarization efficiently absorb over a wide portion of the solar spectrum and hence can find application in the field of photovoltaics. Secondly, we also dealt with semiconductor nonmaterial’s which are technologically very important owing to their improved photoluminescence properties. We tried to improve their light emitting efficiency by engineering crystal structure in nanometer length scales. The thesis deals with such advanced energy materials and is divided in seven chapters. Chapter 1 provides a brief introduction to the fundamental concepts that are relevant in the subsequent chapters. The chapter is started with a brief scenario of current status of energy production and its usage. Next, we have discussed the prospects of ferroelectric materials in photovoltaic devices. This is followed by a brief background on ferroelectricity and related properties which we have studied subsequently. At the end of this chapter a brief overview of photoluminescence properties in semiconductor nonmaterial’s is presented. In this section we have addressed the particular issues that need to be taken care of in order to improve their light emission properties. Chapter 2 describes different experimental and theoretical methods that have been employed to carry out different studies presented in the thesis. Chapter 3 addresses the possibility of employing BaTiO3 (BTO) based composite perovskite oxides as a potent photovoltaic material. It is known that BTO can produce photocurrent upon excitation with suitable light source. However, inability of BTO to absorb sufficient sunlight owing to its near UV band gap prevents to make use of this material in photovoltaic devices. In order to reduce the band gap we have tried to tune the electronic structure at the band edge by doping non-d0 transition metal ions at Ti site. As it is known in the literature an isovalent substitution of Ti4+ stabilizes non-polar phase of BTO we employed a co-doping strategy to substitute tetravalent Ti with equal percentage of a trivalent and a pentavalent metal ion. Keeping in mind off-centering of Ti4+ is primary reason behind the large ferroelectric polarization of BTO, a judicious choice of co-dopant was necessary to minimize reduction of polarization due to replacement of Ti. We have found at least two pairs of co-dopants, namely Mn3+-Nb5+ and Fe3+-Nb5+ which at low doping concentration ( < 10%) effectively reduces the band gap of BTO without affecting its polarization to a large extent. We systematically increase the doping concentration of both the pair of dopants and found Mn3+-Nb5+ pair is more efficient over Fe3+-Nb5+ both in terms of reducing band gap and retaining the polarization of BTO. We have characterized the ferroelectric nature of all the doped compositions with the help of dielectric, polarization and pyroelectric measurements. We have also performed first principle density functional theory (DFT) calculations for an equivalent doped composition and addressed the nature of modulations of electronic structure at the band edges which is responsible for such large reduction of band gap. Chapter 4 deals with composite perovskite materials which posses large tetragonal distortions with reduced optical band gaps. Here we have exploited Cu-Nb and Cu-Ta pair which upon complete substitution of Ti of BTO leads to composite perovskites with enhanced tetragonal distortion of the perovskite lattice. For two resultant compositions, namely BaCu1/3Nb2/3O3 and BaCu 1/3Ta2/3O3 we have characterized the optical and ferroelectric properties. We found though these material possess small band gap (∼ 2 eV), these are not ferroelectric in nature. Results of second harmonic generation measurements and refinement of powder X-ray diffraction both establish Centro symmetric nature of these materials. We infer from these results that presence of large tetragonal distortion is a result of symmetric Jahn-Teller type distortion of Cu2+ and not due to off-centering of any of the metal ions in their MO6 octahedral geometries. In Chapter 5, we have considered the material SrTiO3 (STO) which is stable in cubic paraelectric phase at room temperature. But at the same time this material is considered as an incipient ferroelectric due to presence of an active polar vibrational mode which does not become completely soft even at temperature close to 0 K. While this polar vibrational mode can easily be frozen by making substitution at Sr site, a similar attempt by making substitution at Ti site failed earlier. Keeping in mind Ti is easier to substitute than Sr we employed same co-doping strategy that we have considered in Chapter 3. We found Mn- Nb and Mn-Ta co-dopants at low doping concentration are extremely useful in transforming incipient ferroelectric STO into a dipolar glass. We have characterized the glassy dipolar property of doped STO with the help of tem-perature dependent dielectric response of these material. At the same time we found these co-doped STO possess enhanced static dielectric constant at room temperature with favourable dielectric loss values in comparison to pure STO. We have also ad-dressed the origin of a glassy dipolar state with the help of DFT calculation performed on equivalent doped composition that we have considered for our experiments. In Chapter 6, we have considered another incipient ferroelectric material TiO2 in rutile phase which also possess polar vibrational mode at temperature close to 0 K. A lattice strain along the polar vibrational mode make symmetric non-polar structure unstable with respect to the distorted polar structure. In this context, we found two particular compositions FeTiTaO6 and CrTiTaO6 that are also stable in rutile phases at room temperature but possess similar strain due to presence of larger Fe or Cr and Ta in rutile lattice. Considering the fact these two composite rutile oxides are relaxer ferroelectric in nature, we critically evaluated the effect of the particular kind of strain that these materials introduce in rutile lattice. We also characterized relaxor ferroelectric property and optical band gap of these materials and commented on the potential of these materials in exploiting them in photovoltaic devices. Chapter 7 presents a unique strategy of making use of crystal defects in improving photoluminescent properties of semiconductor nanocrystals. We have shown defects when introduced in nanocrystals in a controlled protected manner efficiently overcome the problem of self absorption which is known to reduce quantum efficiency of emit-ted light. Controlling synthesis conditions we separately prepared CdS nanocrystals with and without intergrowth defects. We characterized the presence of the intergrowth defect with the help of high resolution transmission electron microscope (HRTEM) image. We have also characterized Stokes’ shifted PL emission and ultrafast charge carrier dynamics of these NCs with intergrowth defects. To support these experimental findings we have computed the electronic structures of model nanoclusters possessing similar intergrowth defects that has been observed in HRTEM images. We find that the presence of defects in a nanocluster particularly affect the position of the band edge. However our joint density of state calculation shows that contribution of these defect states to an absorption spectra is negligible. Thus presence of defect states at band edge ensures a Stokes’ shifted emission without affecting the position of absorption. In a separate section of this chapter we have shown apart from intergrowth defects presence of twin boundary also provide similar mid-gap states that can alter its’ optical proper-ties to large extent. In summary, we have studied a few bulk and nano-materials which can show improved photovoltaic and photoluminescence property. We investigated effect of external dopant ions on a classical ferroelectric material BaTiO3 and two incipient ferroelectric materials SrTiO3 and rutile TiO2. We have also shown that efficient defect engineering could be extremely useful in improving photoluminescent property of CdS nanocrystals which is a prototype of II-VI semiconductor nanomaterials. In a separate Appendix Chapter, we have shown an easy and efficient way to suppress coffee ring effect which takes place universally when a drop of colloidal suspension is dried on a solid substrate. We have shown temporary modification of hydropho-bicity of a glass substrate not only can suppress the coffee ring effect but also leaves the particle in a highly ordered self-assembled phase after completion of drying process

We have studied the interplay between the layered crystal structure and the 5f magnetism in uranium-based tetragonal compounds UnTIn3n+2. Sin- gle crystals of U2RhIn8, URhIn5 and UIn3 were prepared by In self-flux method. The novel U2RhIn8 compound adopts the Ho2CoGa8-type struc- ture with lattice parameters a = 4.6056(6) ˚A and c = 11.9911(15) ˚A. The behavior of U2RhIn8 strongly resembles that of related URhIn5 and UIn3 with respect to magnetization, specific heat and electrical resistivity except for magnetocrystalline anisotropy developing on stacking composition in the series UIn3 vs. U2RhIn8 and URhIn5. U2RhIn8 orders antiferromagnetically below TN = 117 K and exhibits slightly enhanced Sommerfeld coefficient γ = 47 mJ·mol−1 ·K−2 . TN increases with increasing c/a ratio in contrast to the behavior of their CenTIn3n+2 counterparts. Magnetic field leaves the value of the Néel temperature of URhIn5 and U2RhIn8 unaffected up to 9 T. On the other hand, TN increases with applied hydrostatic pressure up to 3.2 GPa with the ∂TN/∂p coefficient resembling URhIn5 and UIn3. Ther- mal expansion of U2RhIn8 reveals a hysteretic behavior of the antiferromag- netic transition pointing to its 1st -order character. The magnetic structure of URhIn5 obtained from neutron diffraction propagates with k = (1 /2, 1 /2, 1 /2) and the...

No description available.

Indiana University-Purdue University Indianapolis (IUPUI)

Thermal control in spacecraft will be increasingly important as the spacecraft grows smaller and more compact. Such spacecraft with low thermal mass will have to be designed to retain or reject heat more efficiently. The passive smart radiation device (SRD) is a new type of thermal control material for spacecraft. Current space thermal control systems require heaters with an additional power penalty to maintain spacecraft temperatures during cold swings. Because its emissivity can be changed without electrical instruments or mechanical part, the use of SRD decreases the request of spacecraft power budget. The (SRD) based on VO2 films is one of the most important structures of the functional thermal control surface, being lighter, more advanced and without a moving devices. A large portion of the heat exchange between an object in space and the environment is performed throughout radiation, which is in turn determined by the object surface properties. The modulation device is coated on the spacecraft surface and thus provides a thermal window that can adapt to the changing conditions in orbit. VO2 is well known to have a temperature driven metal to insulator transition ≈ 68ᴼC accompanying a transformation of crystallographic structure, from monoclinic (M-phase, semiconductor) at temperature below 68ᴼC to tetragonal (R-phase, metal) at temperature above 68ᴼC. This transition temperature is accompanied by an increase of infrared reflectivity and a decrease of infrared emissivity with increasing temperature. This flexibility makes VO2 potentially interesting for optical, electrical, and electro-optical switches devices, and as window for energy efficiency buildings applications. This study reports on effect of thickness on VO2 as well as the effect of proton irradiation on VO2 for active smart radiation device (SRD) application. VO2 was deposited on mica by Pulsed laser deposition techniques. The thickness of the film was varied by varying the deposition time. To characterize VO2 the following techniques were performed: XRD, AFM, SEM, TEM, XPS, RBS, RAMAN and transport measurements for optical properties. The effect of proton irradiation was observed using the SEM, where the change in structure, from crystal grains to rods, was observed. / Physics / M.Sc. (Physics)

No description available.

There is great interest in the development of new polar dielectric ceramics and multiferroic materials with new and improved properties. A family of tetragonal tungsten bronze (TTB) relaxors of composition Ba₆M³⁺Nb₉O₃₀ (M³⁺ = Ga³⁺, Sc³⁺ and In³⁺, and also their solid solutions) were studied in an attempt to understand their dielectric properties to enable design of novel polar TTB materials. A combination of electrical measurements (dielectric and impedance spectroscopy) and powder diffraction (X-ray and neutron) studies as a function of temperature was employed for characterising the dynamic dipole response in these materials. The effect of B-site doping on fundamental dipolar relaxation parameters were investigated by independently fitting the dielectric permittivity to the Vogel-Fulcher (VF) model, and the dielectric loss to Universal Dielectric Response (UDR) and Arrhenius models. These studies showed an increase in the characteristic dipole freezing temperature (T[subscript(f)]) with increase B-cation radius. Crystallographic data indicated a corresponding maximum in tetragonal strain at T[subscript(f)], consistent with the slowing and eventual freezing of dipoles. In addition, the B1 crystallographic site was shown to be most active in terms of the dipolar response. A more in-depth analysis of the relaxor behaviour of these materials revealed that, with the stepwise increase in the ionic radius of the M³⁺ cation on the B-site within the Sc-In solid solution series, the Vogel-Fulcher curves (lnf vs. T[subscript(m)]) are displaced to higher temperatures, while the degree of relaxor behaviour (frequency dependence) increases. Unfortunately, additional features appear in the dielectric spectroscopy data, dramatically affecting the Vogel-Fulcher fitting parameters. A parametric study of the reproducibility of acquisition and analysis of dielectric data was therefore carried out. The applicability of the Vogel-Fulcher expression to fit dielectric permittivity data was investigated, from the simple unrestricted (“free”) fit to a wider range of imposed values for the VF relaxation parameters that fit with high accuracy the experimental data. The reproducibility of the dielectric data and the relaxation parameters obtained by VF fitting were shown to be highly sensitive to the thermal history of samples and also the conditions during dielectric data acquisition (i.e., heating/cooling rate). In contrast, UDR analysis of the dielectric loss data provided far more reproducible results, and to an extent was able to partially deconvolute the additional relaxation processes present in these materials. The exact nature of these additional relaxations is not yet fully understood. It was concluded application of the Vogel-Fulcher model should be undertaken with great care. The UDR model may represent a feasible alternative to the evaluation of fundamental relaxation parameters, and a step forward towards the understanding of the dielectric processes in tetragonal tungsten bronzes.