Σε αυτήν την εργασία περιγράφεται αναλυτικά ένα κύκλωμα ανάγνωσης για ηλεκτροχημικό βιοαισθητήρα, καθώς και η κατάλληλη τροποποίησή του ώστε να μπορεί να χρησιμοποιηθεί σε σύστημα χωρητικού βιοαισθητήρα. Βασικός στόχος και στις δύο περιπτώσεις είναι η συμβατότητα των κυκλωμάτων με πλήρως ολοκληρωμένα βιοχημικά μικροσυστήματα, με έμφαση στη μικρή επιφάνεια ολοκλήρωσης και τη χαμηλή κατανάλωση. Κεντρικό στοιχείο των δύο υλοποιήσεων αποτελεί ο χωρητικός ενισχυτής διαντίστασης ο οποίος αναλαμβάνει το ρόλο της μετατροπής της χρήσιμης πληροφορίας, που είναι ένα ρεύμα, σε μία τάση. Αυτή η τάση στη συνέχεια μπορεί να δοθεί για ψηφιακή επεξεργασία, αφού περάσει από έναν ADC . Τα δύο κυκλώματα σχεδιάσθηκαν σε τεχνολογία CMOS της TSMC των 90nm και εμφάνισαν στις εξομοιώσεις ικανοποιητικά χαμηλό θόρυβο. Το κύκλωμα του ηλεκτροχημικού βιοαισθητήρα παρουσίασε καλή γραμμικότητα για ρεύματα από 10nA έως 10uA, ενώ το αντίστοιχο του χωρητικού βιοαισθητήρα είναι δυνατό να μετρήσει χωρητικότητες με μέγιστη απόκλιση 3%. / This paper presents a readout circuit for electrochemical biosensors and the appropriate modification of the circuit to make it compatible with capacitive biosensors. The main goal is to ensure compatibility of the circuits with fully integrated biochemical microsystems and therefore emphasis is placed on achieving small area and low consumption. The fundamental part of the circuits is a Capacitive Transimpedance Amplifier that is responsible for converting the current signal to a voltage. That voltage can then be passed forward to digital processing with the use of an ADC. Both circuits were designed using 90nm TSMC CMOS technology and showed low noise in simulations. The electrochemical biosensor readout circuit achieves good linearity in a range of 10nA to 10uA, while the capacitive biosensor readout circuit is capable of measuring capacitances with a 3% error.

No description available.

Building functional thin-film-transistor (TFT) circuits is crucial for applications such as wearable, implantable and transparent electronics. Therefore, developing a compact model of an emerging semiconductor material for accurate circuit simulation is the most fundamental requirement for circuit design. Further, unique analogue building blocks are needed due to the specific properties and non-idealities of TFTs. This dissertation reviews the major developments in thin-film transistor (TFT) modelling for the computer-aided design (CAD) and simulation of circuits and systems. Following the progress in recent years on oxide TFTs, we have successfully developed a Verilog-AMS model called the CAMCAS model, which supports computer-aided circuit simulation of oxide-TFTs, with the potential to be extended to other types of TFT technology families. For analogue applications, an accurate small signal model for thin film transistors (TFTs) is presented taking into account non-idealities such as contact resistance, parasitic capacitance, and threshold voltage shift to exhibit higher accuracy in comparison with the adapted CMOS model. The model is used to extract the zeros and poles of the frequency response in analogue circuits. In particular, we consider the importance of device-circuit interactions (DCI) when designing thin film transistor circuits and systems and subsequently examine temperature- and process-induced variations and propose a way to evaluate the maximum achievable intrinsic performance of the TFT. This is aimed at determining when DCI becomes crucial for a specific application. Compensation methods are reviewed to show examples of how DCI is considered in the design of AMOLED displays. Based on these design considerations, analogue building blocks including voltage and current references and differential amplifier stages have been designed to expand the analogue library specifically for TFT circuit design. The $V_T$ shift problem has been compensated based on unique circuit structures. For a future generation of application, where ultra low power consumption is a critical requirement, we investigate the TFT’s subthreshold operation through examining several figures of merit including intrinsic gain ($A_i$), transconductance efficiency ($g_m/I_{DS}$) and cut-off frequency ($f_T$). Here, we consider design sensitivity for biasing circuitry and the impact of device variations on low power circuit behaviour.

En cas d’accident grave sur un Réacteur à Eau Pressurisée, l’évaluation de la quantité d’iode susceptible d’être rejetée dans l’environnement revêt une grande importance du fait de la radiotoxicité et de la volatilité de cet élément. Ainsi, une connaissance de tous les phénomènes physico-chimiques se produisant est nécessaire. Ce travail s’est focalisé sur la re-vaporisation, jusqu’à 750°C, de dépôts des PFs contenant de l’iode, particulièrement le CsI et l’AgI, depuis la surface du circuit primaire composée d’acier 304L, 316L et Inconel 600 partiellement oxydés. Les résultats ont montré une influence significative de la composition de l’atmosphère sur les quantités et les formes chimiques de césium et d’iode re-vaporisés. Ainsi, sous vapeur d’eau l’iode et le césium se re-vaporisent intégralement depuis la surface métallique, sous forme de CsI. En présence d’air, l’iode est relâché intégralement, sous forme d’I2(g) majoritairement, tandis que le césium est partiellement retenu à la surface sous forme de chromate de césium, résultant de l’interaction entre le césium et l’oxyde de chrome (III) de la couche d’oxyde. L’utilisation de la technique de spectroscopie optique en ligne IBB-CEAS a permis d’établir la cinétique de relâchement d’I2(g), celle-ci présentant deux pics de relâchement, indiquant l’existence de plusieurs mécanismes conduisant à la formation de cette espèce. Un résultat similaire a été observé pour la re-vaporisation d’AgI en présence d’air. Finalement, des calculs à l’équilibre thermodynamique ont été entrepris afin d’identifier les voies réactionnelles principales pouvant conduire à la formation d’I2(g) lors de la re-vaporisation de CsI en présence d’air. / In case of a severe nuclear accident on a Pressurized Water Reactor, radioactive fission products can be released in the environment and represent a hazard for the human. In order to better predict the progress of the accident and the release of fission products with the use of dedicated simulation tools, the knowledge of all physicochemical phenomena is necessary. This research is focused on the re-vaporisation, up to 750°C, of iodine-containing fission products’ deposits, particularly CsI and AgI, from the surface of the primary circuit, composed of partially oxidized 304L, 316L steels and Inconel 600 alloy. The results have revealed a strong influence of the re-vaporisation atmosphere composition on the quantities and the chemical species nature of re-vaporized caesium and iodine. In steam atmosphere, iodine and caesium are released integrally from the surface, mainly as CsI. In presence of air, iodine is released integrally, mainly as I2(g), whereas caesium is partially retained on the surface of the steel as caesium chromate, resulting from the interaction between caesium and chromium (III) oxide present in the oxide layer. The use of an online optical spectroscopic technique such as IBB-CEAS allowed to follow the I2(g) re-vaporisation kinetics. The latter exhibits two release peaks, suggesting several mechanisms leading to I2(g) formation. A similar result has been observed during the re-vaporisation of AgI in presence of air. Finally, thermodynamic equilibrium computations have been performed in order to identify the main reaction pathways leading to the formation of gaseous molecular iodine in presence of air.

No description available.

The aim of the research presented in this thesis is to develop photonic integrated circuit (PIC) for Radio-over-Fiber (RoF) application. As such, at the beginning of the thesis, a dual-function photonic integrated circuit for microwave photonic applications is proposed. The photonic circuit is arranged to have two separate output ports, and depending upon the RF input signal strength, it provides either tunable millimeter wave carriers by frequency octo-tupling of the RF signal or frequency up-conversion of a microwave signal from the electrical to the optical domain. The circuit exploits the intrinsic relative phases between the ports of multi-mode interference couplers (MMI) to provide all the static optical phases needed, hence drift free. In the middle of thesis, a generalized architecture having N parallel phase modulators driven electrically with a progressive 2π⁄N phase shift is analyzed. The proposed design is justified by computer simulation for N=8 architecture with properly determined optical phase shifts to generate frequency multiplication of an electrical signal. The front- and back-end of the circuit comprises 4×4 MMI couplers enclosing an array of four pairs of phase modulators and 2×2 MMI couplers. The proposed design for frequency multiplication requires no optical or electrical filters; the operation is not limited to carefully adjusted modulation indexes. Later on, a generalized approach for achieving frequency multiplication using two cascades MZM is presented. The proposed design consists of a Mach-Zehnder interferometer with each arm containing a pair of Mach-Zehnder modulators (MZM) in series as a means of optoelectronic frequency multiplication (octo-tupling and quattourviginti-tupling). The circuit requires no electrical or optical filters. There is no requirement to carefully adjust the modulation index to achieve correct operation of the octo-tupler. A comparison is made with an alternative functionally equivalent single-stage parallel MZM circuit discussed herein the thesis. Finally, the thesis describes the generation of the same magnitude but opposite sign high order single optical side band from its output ports by using a RF source. A single stage parallel Mach-Zehnder Modulator (MZM) and a two-stage series parallel MZM architecture is described and their relative merits and demerits discussed. As an illustration of a prospective application it is shown how the circuit may be used to transport radio signals over fibre for wireless access; generating remotely a mm-wave carrier modulated by digital IQ data. A detail calculation of symbol error rate is presented to characterise the system performance. A mathematical analysis is provided to describe the principle of operation for all the proposed design and validated by commercially available industrial standard simulation tool.

Block-structured matrices arise in several contexts in circuit simulation problems. These matrices typically inherit the pattern of sparsity from the circuit connectivity. However, they are also characterized by dense spots or blocks. Direct factorization of those matrices has emerged as an attractive approach if the host memory is sufficiently large to store the block-structured matrix. The approach proposed in this thesis aims to accelerate the direct factorization of general block-structured matrices by leveraging the power of multiple OpenCL accelerators such as Graphical Processing Units (GPUs). The proposed approach utilizes the notion of a Directed Acyclic Graph representing the matrix in order to schedule its factorization on multiple accelerators. This thesis also describes memory management techniques that enable handling large matrices while minimizing the amount of memory transfer over the PCIe bus between the host CPU and the attached devices. The results demonstrate that by using two GPUs the proposed approach can achieve a nearly optimal speedup when compared to a single GPU platform.

This thesis deals with the modelling and circuit simulation problems of nonlinear electronic devices. Emphasis has been aimed at MOSFET devices. A Piecewise Linear (PWL) modelling scheme has been proposed for a general four-terminal nonlinear charge device. The charge functions are all nonlinear and are approximated by PWL functions. If analytical expressions for the nonlinear functions are not available, PWL function approximations can be built from a data table in which discrete data points are recorded. In the time domain, the critical-damping-adjustment (CDA ) scheme is used as the integration rule in the discretization of dynamic charge devices. Piecewise linear modelling combined with the CDA integration scheme gives a fast yet adequately accurate simulation algorithm. The algorithm is based on linear analysis because the entire circuit becomes linear with PWL modelling of nonlinear elements. In order to avoid an iterative solution, PWL region extrapolation is permitted when the circuit solution switches PWL regions. The extrapolation approximation will generate an overshoot error in the solution vector. However, with caution in the selection of the integration step size, the error can be limited to an acceptable range. Two types of MOSFETs have been modelled and simulated with the algorithm introduced in this thesis, and satisfactory results have been obtained as compared to Newton's iteration solutions. / Applied Science, Faculty of / Electrical and Computer Engineering, Department of / Graduate

The onset of a ferroresonance phenomenon in power systems is commonly caused by the reconfiguration of a circuit into the one consisting of capacitances in series and interacting with transformers. The reconfiguration can be due to switching operations of de-energisation or the occurrence of a fault. Sustained ferroresonance without immediate mitigation measures can cause the transformers to stay in a state of saturation leading to excessive flux migrating to transformer tanks via internal accessories. The symptom of such an event can be unwanted humming noises being generated but the real threatening implication is the possible overheating which can result in premature ageing and failures.The main objective of this thesis is to determine the accurate models for transformers, transmission lines, circuit breakers and cables under transient studies, particularly for ferroresonance. The modeling accuracy is validated on a particular 400/275 kV transmission system by comparing the field test recorded voltage and current waveforms with the simulation results obtained using the models. In addition, a second case study involving another 400/275 kV transmission system with two transformers is performed to investigate the likelihood of the occurrence of sustained fundamental frequency ferroresonance mode and a possible quenching mechanism using the 13 kV tertiary connected reactor. A sensitivity study on transmission line lengths was also carriedout to determine the probability function of occurrence of various ferroresonance modes. To reproduce the sustained fundamental and the subharmonic ferroresonance modes, the simulation studies revealed that three main power system components which are involved in ferroresonance, i.e. the circuit breaker, the transmission line and the transformer, can be modeled using time-controlled switch, the PI, Bergeron or Marti line model, and the BCTRAN+ or HYBRID transformer model. Any combination of the above component models can be employed to accurately simulate the ferroresonance system circuit. Simulation studies also revealed that the key circuit parameter to initiate transformer ferroresonance in a transmission system is the circuit-to-circuit capacitance of a double-circuit overhead line. The extensive simulation studies also suggested that the ferroresonance phenomena are far more complex and sensitive to the minor changes of system parameters and circuit breaker operations. Adding with the non-linearity of transformer core characteristics, repeatability is not always guaranteed for simulation and experimental studies. All simulation studies are carried out using an electromagnetic transient program, called ATPDraw.

Linear and nonlinear microwave properties of chemical vapor deposition (CVD)-grown graphene are characterized by incorporating a coplanar waveguide (CPW) transmission-line test structure. The intrinsic linear transport properties (S-parameters) of the graphene sample are measured and extracted via a deembedding procedure and then fitted with an equivalent circuit model up to 10 GHz. A statistical uncertainty analysis based on multiple measurements is implemented to esti- mate the error of the extracted graphene linear parameters as well. Nonlinear properties (second- and third-order harmonics as a function of fundamental input power) of the sample are also measured with a fundamental input signal of 1 GHz. Clear harmonics generated from graphene are observed, while no obvious fundamental power saturation is seen. The measured nonlinearity is applied in a graphene patch antenna case study to understand its influence on potential applications in terms of third-order intermodulation levels.