The equiatomic FeRh alloy undergoes a first-order phase transition from an antiferromagnetic (AFM) to a ferromagnetic (FM) state at about 370 K with a small thermal hysteresis of about 10 K around the phase transition. The transition is accompanied by a unit cell volume expansion about 1% in the c lattice parameter. During the transition the new phase nucleates in the matrix of the original phase by reaching the critical temperature followed by a growth in size upon increasing temperature further. Therefore, to understand the transition process with more details, it is desirable to investigate the nucleation and growth of both phases within the first order phase transition. In the present thesis the main focus is on the growth of FeRh thin films by means of Molecular Beam Epitaxy (MBE) technique and characterization of the magnetic and structural properties. To develop an understanding of the phase transformation in FeRh thin films the ways in which one can tune it were investigated. The following aspects concerning the FeRh system have been examined here: 1) influence of annealing temperature on the magnetic and structural response, 2) effect of film thickness on the first-order phase transition temperature as well as the saturation magnetization, 3) influence of chemical composition on the magnetic properties and 4) magnetic field-induced phase transition. To get insight to details of the transition process the magnetization dynamic has been addressed by performing Ferromagnetic resonance (FMR) experiment across the phase transition. FMR measurements determined the existence of two areas with different magnetic properties inside the film. A huge temperature difference for the beginning of the phase transition in comparison with the static magnetization measurement was observed for the equiatomic FeRh thin film prepared by MBE. Tuning of the AFM to FM phase transition in the FeRh thin film by means of low-energy/low fluence Ne+ ion irradiation was studied. Ion irradiation technique offers a quantitative control of the degree of chemical disorder by adjusting the ion fluence applied, while the penetration depth of the disordered phase can be adjusted by the ion-energy. The main results of ion irradiation are the shifting of the phase transition temperature to lower temperature and irradiation with 3×1014 ion/cm2 leads to the disappearance the AFM phase completely.

The goal of this work was to evaluate the electrochemical properties of TiZrNbTa thin films deposited by magnetron sputtering using an industrial physical vapor deposition system. Samples were deposited on both Si(001) and 316L stainless steel. The samples deposited on Si(001) were either crystalline (bcc reflections) or amorphous, depending on the sputtering parameters. The crystalline films were composed of thin films with two different layers. The upper layer was nanocolumnar composed of elongated nanocolumns, while the lower was dense. The amorphous films had only one nanocolumnar layer and higher porosity. Polarization curves revealed that all samples had low corrosion current densities, in the order of 10-8 A/cm2. The samples showed an extended passive region up to 3.0 V vs Ag/AgCl due to the growth of a passivating oxide. The surface of the samples consisted of Nb2O5, ZrO2, TiO2 and Ta2O5. The chronoamperometry tests showed current oscillations, related to a break-down and reformation of the passive film. Electrochemical impedance spectroscopy revealed that all samples behaved similarly in all three electrolytes, and the simulated electrical circuits were indicating no corrosion reactions. A decrease in capacitance values after polarization was observed and was related to the formed surface oxide. Samples deposited on 316L stainless steel showed a passive regime for a shorter potential window, probably related to surface defects of the films. Heat treatments at 400 and 800 Celsius for 20 hours could not trigger the phase transformation from single bcc to hcp or dual bcc, as predicted by the Thermo-Calc software.

Transparent oxide electronics have emerged as promising materials to shape the future of electronics. While several n-type oxides have been already studied and demonstrated feasibility to be used as active materials in thin film transistors, high performance p-type oxides have remained elusive. This dissertation is devoted to the study of transparent p-type oxide semiconductor tin monoxide and its use in the fabrication of field effect devices. A complete study on the deposition of tin monoxide thin films by direct current reactive magnetron sputtering is performed. Carrier density, carrier mobility and conductivity are studied over a set of deposition conditions where p-type conduction is observed. Density functional theory simulations are performed in order to elucidate the effect of native defects on carrier mobility. The findings on the electrical properties of SnO thin films are then translated to the fabrication of thin films transistors. The low processing temperature of tin monoxide thin films below 200 oC is shown advantageous for the fabrication of fully transparent and flexible thin film transistors. After careful device engineering, including post deposition annealing temperature, gate dielectric material, semiconductor thickness and source and drain electrodes material, thin film transistors with record device performance are demonstrated, achieving a field effect mobility >6.7 cm2V-1s-1. Device performance is further improved to reach a field effect mobility of 10.8 cm2V-1s-1 in SnO nanowire field effect transistors fabricated from the sputtered SnO thin films and patterned by electron beam lithography. Downscaling device dimension to nano scale is shown beneficial for SnO field effect devices not only by achieving a higher hole mobility but enhancing the overall device performance including better threshold voltage, subthreshold swing and lower number of interfacial defects. Use of p-type semiconductors in nonvolatile memory applications is then demonstrated by the fabrication of hybrid ferroelectric field effect transistors composed of organic ferroelectric layer polyvinylidene fluoride trifluoroethylene and inorganic p-type semiconductor tin monoxide. Both rigid and flexible devices are demonstrated, showing the advantages of low temperature oxides over polymer semiconductors by achieving much better performance, such as order of magnitude higher hole mobility.

In this thesis, growth of ZrB2 thin films by direct current magnetron sputtering is investigatedusing a high vacuum industrial scale deposition system and an ultra-high vacuum laboratory scalesystem. The films were grown from ZrB2 compound targets at temperatures ranging from ambient (without external heating) to 900 °C and with substrate biases from -20 to -120 V. Short deposition times of typically 100 or 300 s and high growth rates of 80-180 nm/min were emphasized to yield films with thicknesses of 300-400 nm. The films were characterized by thinfilm X-ray diffraction with the techniques θ/2θ and ω scans, pole figure measurements andreciprocal space mapping, scanning and transmission electron microscopy, elastic recoil detection analysis and four point probe measurements. The substrates applied were Si(100), Si(111),4H-SiC(0001) and GaN(0001) epilayers grown on 4H-SiC. The Si(111), 4H-SiC(0001) substrates and GaN(0001) epilayers were chosen given their small lattice mismatches to ZrB2 making them suitable for epitaxial growth.The films deposited in the industrial system were found to be close to stoichiometric with a low degree of contaminants, with O being the most abundant at a level of < 1 at.%. Furthermore, the structure of the films is temperature dependent as films deposited in this system without external heating are fiber textured with a 0001-orientation while the films deposited at 550 °C exhibitrandom orientation. In contrast, epitaxial growth was demonstrated in the laboratory scale system on etched 4H-SiC(0001) and Si(111) deposited at 900 °C following outgassing of the substrates at 300 °C and in-situ heat treatment at the applied growth temperature to remove the native oxides. However, films grown on GaN(0001) were found to be 0001 textured at the applied deposition conditions, which make further studies necessary to enable epitaxial growth on this substrate material. Four point probe measurements on the films deposited in the industrial system show typical resistivity values ranging from ˜95 to 200 μΩcm with a trend to lower values for the films deposited at higher temperatures and at higher substrate bias voltages.

<p>Vertically aligned nanocomposite (VAN) thin films are a promising thin-film platform that allows the combination of a highly desired material with another complementary oxide. Traditionally, VANs have been limited to combining an oxide with another oxide which has shown a wide range of functionality, and, by adjusting the different growth parameters, it has led to the tuning of their physical properties. While VANs have already shown to be an effective platform with immense potential, further enhancement of physical properties can be performed by replacing one of the oxides with a metal forming metal-oxide VANs. </p> <p>In this dissertation, by the inclusion of the 3d transition metals, e.g., Fe and Co, into various oxide matrices, such as La_0.5Sr_0.5FeO₃, BaZrO₃, and BaTiO₃, strong, highly anisotropic, ferromagnetic properties have been achieved. By varying the growth parameters, tunable physical properties, mainly coercivity and anisotropic ratio, have been demonstrated. Furthermore, in the case of Co-BaZrO₃, a multi-layer stack has been successfully grown and demonstrated a tailorable magnetoresistance. Additionally, a novel system by combining Fe pillars into a BaTiO₃ matrix has been demonstrated. This new system allows for the combination of the room temperature Fe ferromagnetic properties with the ferroelectric properties of BaTiO₃, allowing for coupling between the two with coercivity tuning and tailorable ferromagnetic properties. </p> <p>Lastly, it has been shown a possible framework by adding additional metals into the existing metal-oxide VAN platform. By adding the third phase, another metal, it opens up a new avenue to induce additional functionality while creating a method to introduce coupling between the different metals and physical properties. </p> <br>

<p>Thin film photovoltaic materials have garnered much interest recently due to their processability in addition to good properties for conversion of solar photons to usable energy. Amine-thiol chemistry has shown the ability to produce solution processed materials such as Cu₂ZnSn(S,Se)₄ (CZTSSe), a thin film absorber composed of earth abundant metals. Using similar solution processing methods as those used to produce CZTS, we wish to synthesize a phase pure solution processed material from molecular precursors of metals and metal chalcogenides into an Ag₂ZnSnSe₄ absorber which lacks the electronic defects that plague CZTSSe. Additionally, we will utilize the reactive dissolution of metal in amine-thiol solution chemistry for a more detailed understanding of how metal-sulfur complexes form and then decompose into films, to gain insight about the conditions that produce stable solutions and high quality films for a better ability to optimize processing conditions. </p><p><br></p><p>We find we are able to individually dissolve zinc metal, tin metal, and silver sulfide precursors to produce solutions of metal thiolate complexes. Based on results from electrospray ionization mass spectrometry (ESI-MS), proton nuclear magnetic resonance (¹H-NMR), and extended X-ray absorption fine structure (EXAFS)/ X-ray absorption near edge spectra (XANES) we propose that these structures contain thiolate molecules coordinated with Ag, Zn, and Sn in the +1, +2, and +2 oxidation states respectively. However, mixing these produces an AZTS solution which is only stable for 3 hours, due to a redox reaction between Ag⁺ and Sn²⁺ which forms Sn⁴⁺ and insoluble Ag metal. To solve this, we synthesize SnS₂ and show this produces a different Sn-thiolate complex with fully oxidized Sn⁴⁺. This is then used to produce the first stable AZTS solution, an essential step to fabricating reproducible films. We use this AZTS solution to fabricate films containing AZTS, and selenize these films in a tube furnace to produce films which contain AZTSe as well as secondary phases. We then use rapid thermal processing furnace to remove some of these secondary phases, and discuss ways to further improve our material quality.<br></p><p></p>

Thin film solar cells, such as Cu(In,Ga)Se2, have a large potential for cost reductions, due to their reduced material consumption. However, the lack in commercial success of thin film solar cells can be explained by lower efficiency compared to wafer-based solar cells. In this work, we have investigated the aluminum oxide as a passivation layer to reduce recombination losses in Cu(In,Ga)Se2 solar cells to increase their efficiency. Aluminum oxides have been deposited using spatial atomic layer deposition. Blistering caused by post-deposition annealing of thick enough alumina layer was suggested to make randomly arranged point contacts to provide an electrical conduction path through the device. Techniques such as current-voltage measurement, photoluminescence and external quantum efficiency were performed to measure the effectiveness of aluminum oxide as a passivation layer. Very high photoluminescence intensity was obtained for alumina layer between Cu(In,Ga)Se2/CdS hetero-junction after a heat treatment, which shows a reduction of defects at the absorber/buffer layers of the device.

We report an influence of disorder on structural and magnetic properties of ZnFe2O4 thin films grown at temperatures ranging from 400°C to 600°C by pulsed laser deposition in O2 atmosphere on SrTiO3 (100) substrates evidenced by properties of electronic transitions observed in the dielectric function. Inversion of the normal spinel structure was found to be one of the main mechanisms responsible for the increase in the magnetic response for the lowest growth temperature. The enhanced feature in the dielectric function located at ~3.5 eV, related to the transition involving tetrahedrally coordinated Fe3+ cations, corresponds to the dominating magnetic coupling between the octahedral and tetrahedral lattice sites, responsible for the overall ferrimagnetic behaviour of the film grown at the lowest temperature.

We present X-ray diffraction and Raman spectroscopy investigations of (InxGa1–x)2O3 thin films and bulk-like ceramics in dependence of their composition. The thin films grown by pulsed laser deposition have a continuous lateral composition spread allowing the determination of phonon mode properties and lattice parameters with high sensitivity to the composition from a single 2-in. wafer. In the regime of low indium concentration, the phonon energies depend linearly on the composition and show a good agreement between both sample types. We determined the slopes of these dependencies for eight different Raman modes. While the lattice parameters of the ceramics follow Vegard’s rule, deviations are observed for the thin films. Further, we found indications of the highpressure phase InGaO3 II in the thin films above a critical indium concentration, its value depending on the type of substrate.

We present X-ray diffraction and Raman spectroscopy investigations of a (100)-oriented (AlxGa1–x)2O3 thin film on MgO (100) and bulk-like ceramics in dependence on their composition. The thin film grown by pulsed laser deposition has a continuous lateral composition spread allowing to determine precisely the dependence of the phonon mode properties and lattice parameters on the chemical composition. For x<0.4, we observe the single-phase b-modification. Its lattice parameters and phonon energies depend linearly on the composition. We determined the slopes of these dependencies for the individual lattice parameters and for nine Raman lines, respectively. While the lattice parameters of the ceramics follow Vegard’s rule, deviations are observed for the thin film. This deviation has only a small effect on the phonon energies, which show a reasonably good agreement between thin film and ceramics.