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One-dimensional and hierarchical nanostructures have acquired tremendous attention in the past decades due to their possible application. In spite of the rapid emergence of new morphologies, the underlying growth mechanism is still not well understood. The lack of effective p-type or n-type doping is another obstacle for many semiconducting nanomaterials. A deeper investigation into these structures and new methods to fabricate devices are of significant impact for nanoscience and nanotechnology. Motivated by a desire to understand the growth mechanism of nanostructures and investigate novel device fabrication method, the research described in this thesis carried out on the synthesis, characterization, and device fabrication of semiconducting nanostructures. The main focus of the research was on ZnO, SnO2, and Zn3P2 for their great capability for fundamental phenomena studying, promising applications in sensors and optoelectronics, and the potential generalization of results to other materials. Within this study the following goals have been achieved: 1) Improved understanding of polar-surface-induced growth mechanism in wurtzite-structured ZnO and generalization of this growth mechanism with the discovery and analysis of rutile ¨Cstructured SnO2, 2) observation of the significance of the transversal growth, which is usually ignored, in interpenetrative ZnO nanowires, 3) rational design and growth control over versatile nanostructures of ZnO and Zn3P2, and 4) conjunction of p-type Zn3P2 and n-type ZnO semiconducting nanostructures for device fabrications. The framework for the research is reviewed first in chapter 1. Chapter 2 gives the detailed experimental setup, synthesis procedure, and common growth mechanism for nanostructure growth. A detailed discussion on the growth of ZnO nanostructures in chapter 3 provides more insight into the polar-surface-induced growth, transversal growth, vapor-solid growth, and vapor-liquid-solid growth during the formation of nanostructures. Polar-surface-induced growth is also confirmed in the growth of SnO2 nanostructures, which is also included in chapter 2. Chapter 3 presents Zn3P2 nanostructures from the newly designed experiment setup and the device fabrication from ZnO and Zn3P2 crossed nanowires.

In past years, legislative pressures (particularly in Japan and Europe) had forced the electronics industry to eliminate Pb from their end products and manufacturing processes. With respect to factors such as ease of converting existing tin-lead plating systems, ease of manufacture and compatibility with existing assembly methods, pure tin plating is seen by many in the industry as a potentially simple and cost effective alternative to SnPb-based systems. The problem of spontaneous tin whisker formation, a characteristic of pure tin, still needs to be addressed, as it can lead to device failure by shorting two terminals on electronic devices. This possibility gives rise to major reliability concerns. The study relates to an electronic component with pure tin deposit layer on the part for electric connection, wherein pure tin deposit layer is a fine grained tin deposit layer composed of grains with smaller size in the direction perpendicular to the deposit surface than in the direction parallel to the deposit surface. It is called irregular tin grain structure. It applies a process for plating an electronic component, so as to form a pure tin deposit layer on the part for electric connection, comprising the steps of: adjusting the composition of tin plating solution in which starter additive and brighter additive are included; moving the electronic component through the tin plating solution, so as to form a fine grained tin deposit layer on the part for electric connection. We performed a DoE by depositing different tin grain structures with variant thickness. After whisker test in high temperature/high humidity and room condition, we confirmed corrosion mechanism, intermetallic morphology, and different behaviour of tin atoms. To summarize the studies, as compared with the prior arts, irregular grain structure can validly inhibit the whisker growth.

The purpose of the thesis is to investigate the improvement of single-crystal Si solar cell efficiency using porous Indium tin oxide (ITO)/ITO double layer antireflection(AR) coating. The resistivity, transmittance and refraction index of the porous ITO films prepared by supercritical CO2 treatment were investigated. At a 2000 psi pressure and 60¡CC, the resistivity of porous ITO films is 15 £[-cm, the average transmittance is better than 95 %, and the refraction index is 1.54. In addition, the resistivity of ITO thin films fabricated by reactive ratio-frequency magnetron sputtering is 7¡Ñ10-4 £[-cm, the average transmittance are 85 %, and the refraction index is 2.0. For the single crystal-Si solar cell with porous ITO/ITO double layer AR coating, the open circuit voltage, short circuit current, fill factor and efficiency are measured.

In this studing, application of the digital image correlation method (DIC) for determining the coefficient of thermal expansion (CTE) of Indium Tin Oxide/Polyethylene Terephthalate(ITO/PET) thin film/flexible substrate was proposed and the effects of thinkness variations of ITO and PET, respectively, on the CTE of the specimens was disscussed. The observation range of experimental temperature was chosen from room temperature to the glass transfer temperature of PET, 70¢J. A novel DIC experimental process for reducing the errors caused from the variations of the refractive index of the surrounding heated air was proposed. As a result, the experimental error of CTE measurement was reduced form 10~17% to less than 5%. The experimental results showed that the CTE of ITO/PET specimen is anisotropic. Futhermore, the CTE of an ITO/PET specimen will be increased by decreasing the thinkness of PET flexible substrate, and increased by increasing the thinkness of ITO film - which means decreasing the surface resistance of ITO film.

In the study, conductive distributed Bragg reflectors (DBRs) fabricated at room temperature based on porous indium tin oxide (ITO) on dense ITO bilayers were proposed for resonant cavity organic light emitting diodes (RCOLEDs). In the fabrication of the ITO DBRs, the low refractive index porous ITO films were obtained by applying supercritical CO2 treatment at different temperature and pressures on the spin-coated sol-gel ITO films. On the other hand, the high refractive index ITO films were grown at room temperature by long-throw reactive ratio-frequency magnetron sputtering. The refractive index of the porous ITO film and ITO films were 1.54 and 2.0, respectively. For the DBR with 4 pairs ITO bilayers, the optical reflectance of more than 70 % was achieved. The stop band and the average resistivity is 140 nm and 2.2¡Ñ10-3 £[-cm, respectively. Finally, electrical and optical characteristics of the RCOLEDs fabricated on the ITO DBR were investigated and compared with those of the conventional OLEDs. The maximum luminous efficiency of 3.79 cd/A was obtained at 347 mA/cm2 for the RCOLED. This luminous efficiency was 26 % higher than that of the conventional OLED.

The mechanical properties of biomedical materials were determined and discussed in this study. The extension and tensile tests for aorta and coronary artery were carried out using tensile testing machine. Based on incompressibility of biological soft tissue, the stress-stretch curves of arteries were obtained. This study proposed a nonlinear Ogden material model for the numerical simulation of coronary artery extension during stent implantation. The corresponding Ogden model parameters were derived by the obtained stress-stretch curves from tensile tests. For validation, the proposed nonlinear Ogden material model for coronary artery was applied to a Palmaz type stent implantation process. The simulated stent deformation was found to be reasonable. It had a good correlation with the measured results. The microindentation experiments were used to measure the mechanical properties of enamel and dentine of human teeth in this study. To reveal the relation between the experimental parameters and measured mechanical properties, Young¡¦s moduli were investigated by varying experimental parameters. The parameter of maximum indentation load significantly influences measured values. Young¡¦s modulus varies very slightly when 10 to 100 mN of maximum indentation load applied. Young¡¦s modulus is not sensitive to the parameters of portion of unloading data and teeth age. The combination of finite element analysis and curve-fitting method is proposed to determine the mechanical properties of thin film deposited on substrate. The mechanical properties of thin film, i.e. Young¡¦s modulus, yield strength and strain-hardening exponent, were extracted by applying an iterative curve-fitting scheme to the experimental and simulated force-indentation depth curves during the microindentation loading and unloading processes. The variation of mechanical properties of TiN thin films with thicknesses ranging from 0.2 to 1.4 £gm was extracted. The results presented the film thickness effect makes the Young¡¦s modulus of TiN thin films reduces with reducing film thickness, particularly at thicknesses less than 0.8 £gm. Therefore, it can be inferred that a film thickness of 0.8 £gm possibly represents the upper bound when employing macroscopic mechanics with bulk material properties.