Topological phases of matter represent a new phase which cannot be understood in terms of Landau’s theory of symmetry breaking and are characterized by non-local topological properties emerging from purely local (microscopic) degrees of freedom. It is the non-trivial topology of the bulk band structure that gives rise to topological phases in condensed matter systems. Quantum Hall systems are prominent examples of such topological phases. Different quantum Hall states cannot be distinguished by a local order parameter. Instead, non-local measurements are required, such as the Hall conductance, to differentiate between various quantum Hall states. A signature of a topological phase is the existence of robust properties that do not depend on microscopic details and are insensitive to local perturbations which respect appropriate symmetries. Examples of such properties are the presence of protected gapless edge states at the boundary of the system for topological insulators and the remarkably precise quantization of the Hall conductance for quantum Hall states. The robustness of these properties can be under-stood through the existence of a topological invariant, such as the Chern number for quantum Hall states which is quantized to integer values and can only be changed by closing the bulk gap. Two other examples of topological phases of matter are topological superconductors and Weyl semimetals. The study of transport in various kinds of junctions of these topological materials is highly interesting for their applications in modern electronics and quantum computing. Another intriguing area to study is how to generate new kind of gapless edge modes in topological systems. In this thesis I have studied various aspects of topological phases of matter, such as electronic transport in junctions of topological insulators and topological superconductors, the generation of new kinds of boundary modes in the presence of granularity, and the effects of periodic driving in topological systems. We have studied the following topics. 1. transport across a line junction of two three-dimensional topological insulators, 2. transport across a junction of topological insulators and a superconductor, 3. surface and edge states of a topological insulator starting from a lattice model, 4. effects of granularity in topological insulators, 5. Majorana modes and conductance in systems with junctions of topological superconducting wires and normal metals, and 6. generation of new surface states in a Weyl semimetal in the presence of periodic driving by the application of electromagnetic radiation. A detailed description of each chapter is given below. • In the first chapter we introduce a number of concepts which are used in the rest of the thesis. We will discuss the ideas of topological phases of matter (for example, topological insulators, topological superconductors and Majorana modes, and Weyl semimetals), the renormalization group theory for weak interactions, and Floquet theory for periodically driven systems. • In the second chapter we study transport across a line junction which separates the surfaces of two three-dimensional topological insulators. The velocities of the Dirac electrons on the two surfaces may be unequal and may even have opposite signs. For a time-reversal invariant system, we show that the line junction is characterized by an arbitrary real parameter α; this determines the scattering amplitudes (reflection and transmission) from the junction. The physical origin of α is a potential barrier that may be present at the junction. If the surface velocities have the same sign, edge states exist that propagate along the line junction with a velocity and orientation of the spin which depend on α and the ratio of the velocities. Next, we study what happens if the two surfaces are at an angle φ with respect to each other. We study the scattering and differential conductance across the line junction as functions of φ and α. We also show that there are edge states which propagate along the line junction with a velocity and spin orientation which depend on φ. Finally, if the surface velocities have opposite signs, we find that the electrons must necessarily transmit into the two-dimensional interface separating the two topological insulators. • In the third chapter we discuss transport across a line junction lying between two orthogonal topological insulator surfaces and a superconductor which can have either s-wave (spin-singlet) or p-wave (spin-triplet) pairing symmetry. This junction is more complicated than the line junction discussed in the previous chapter because of the presence of the superconductor. In a topological insulator spin-up and spin-down electrons get coupled while in a superconductor electrons and holes get coupled. Hence we have to use a four-component spinor formalism to describe both spin and particle-hole degrees of freedom. The junction can have three time-reversal invariant barriers on the three sides. We compute the subgap charge conductance across such a junction and study their behaviors as a function of the bias voltage applied across the junction and the three parameters which characterize the barriers. We find that the presence of topological insulators and a superconductor leads to both Dirac and Schrodinger-like features in the charge conductances. We discuss the effects of bound states on the superconducting side on the conductance; in particular, we show that for triplet p-wave superconductors such a junction may be used to determine the spin state of its Cooper pairs. • In the fourth chapter we derive the surface Hamiltonians of a three-dimensional topological insulator starting from a microscopic model. (This description was not discussed in the previous chapters where we directly started from the surface Hamiltonians without deriving them form a bulk Hamiltonian). Here we begin from the bulk Hamiltonian of a three-dimensional topological insulator Bi2Se3. Using this we derive the surface Hamiltonians on various surfaces of the topological insulator, and we find the states which appear on the different surfaces and along the edge between pairs of surfaces. The surface Hamiltonians depend on the orientation of the surfaces and are therefore quite different from the previous chapters. We use both analytical methods based on the surface Hamiltonians (which are derived from the bulk Hamiltonian) and numerical methods based directly on a lattice discretization of the bulk Hamiltonian in order to find surface and edge states. We find that the application of a potential barrier along an edge can give rise to states localized at that edge. These states have an unusual energy-momentum dispersion which can be controlled by applying a potential along the edge; in particular, the velocity of these states can be tuned to zero. The scattering and conductance across the edge are studied as a function of the edge potential. We show that a magnetic field applied in a particular direction can also give rise to zero energy states on certain edges. We point out possible experimental ways of looking for the various edge states. • In the fifth chapter we study a system made of topological insulator (TI) nanocrystals which are coupled to each other. Our theoretical studies are motivated by the following experimental observations. Electrical transport measurements were carried out on thin films of nanocrystals of Bi2Se3 which is a TI. The measurements reveal that the entire system behaves like a single TI with two topological surface states at the two ends of the system. The two surface states are found to be coupled if the film thickness is small and decoupled above a certain film thickness. The surface state penetration depth is found to be unusually large and it decreases with increasing temperature. To explain all these experimental results we propose a theoretical model for this granular system. This consists of multiple grains of Bi2Se3 stacked next to each other in a regular array along the z-direction (the c-axis of Bi2Se3 nanocrystals). We assume translational invariance along the x and y directions. Each grain has top and bottom surfaces on which the electrons are described by Hamiltonians of the Dirac form which can be derived from the bulk Hamiltonian known for this material. We introduce intra-grain tunneling couplings t1 between the opposite surfaces of a single grain and inter-grain couplings t2 between nearby surfaces of two neighboring grains. We show that when t1 < t2 the entire system behaves like a single topological insulator whose outermost surfaces have gapless spectra described by Dirac Hamiltonians. We find a relation between t1, t2 and the surface state penetration depth λ which explains the properties of λ that are seen experimentally. We also present an expression for the surface state Berry phase as a function of the hybridization between the surface states and a Zeeman magnetic field that may be present in the system. At the end we theoretically studied the surface states on one of the side surfaces of the granular system and showed that many pairs of surface states can exist on the side surfaces depending on the length of the unit cell of the granular system. • In the sixth chapter we present our work on junctions of p-wave superconductors (SC) and normal metals (NM) in one dimension. We first study transport in a system where a SC wire is sandwiched between two NM wires. For such a system it is known that there is a Majorana mode at the junction between the SC and each NM lead. If the p-wave pairing changes sign at some point inside the SC, two additional Majorana modes appear near that point. We study the effect of all these modes on the subgap conductance between the leads and the SC. We derive an analytical expression as a function of and the length L of the SC for the energy shifts of the Majorana modes at the junctions due to hybridization between them; the energies oscillate and decay exponentially as L is increased. The energies exactly match the locations of the peaks in the conductance. We find that the subgap conductances do not change noticeably with the sign of . So there is no effect of the extra Majorana modes which appear inside the SC (due to changes in the signs of Δ) on the subgap conductance. Next we study junctions of three p-wave SC wires which are connected to the NM leads. Such a junction is of interest as it is the simplest system where braiding of Majorana modes is possible. Another motivation for studying this system is to see if the subgap transport is affected by changes in the signs of . For sufficiently long SCs, there are zero energy Majorana modes at the junctions between the SCs and the leads. In addition, depending on the signs of the Δ’s in the three SCs, there can also be one or three Majorana modes at the junction of the three SCs. We show that the various subgap conductances have peaks occurring at the energies of all these modes; we therefore get a rich pattern of conductance peaks. Next we study the effects of interactions between electrons (in the NM leads) on the transport. We use a renormalization group approach to study the effect of interactions on the conductance at energies far from the SC gap. Hence the earlier part of this chapter where we studied the transport at an energy E inside the SC gap (so that − < E < Δ) differs from this part where we discuss conductance at an energy E where |E| ≫ . For the latter part we assume the region of three SC wires to be a single region whose only role is to give rise to a scattering matrix for the NM wires; this scattering matrix has both normal and Andreev elements (namely, an electron can be reflected or transmitted as either an electron or a hole). We derive a renormalization group equation for the elements of the scattering matrix by assuming the interaction to be sufficiently weak. The fixed points of the renormalization group flow and their stabilities are studied; we find that the scattering matrix at the stable fixed point is highly symmetric even when the microscopic scattering matrix and the interaction strengths are not symmetric. Using the stability analysis we discuss the dependence of the conductances on the various length scales of the problem. Finally we propose an experimental realization of this system which can produce different signs of the p-wave pairings in the different SCs. • In the seventh chapter we show that the application of circularly polarized electro-magnetic radiation on the surface of a Weyl semimetal can generate states at that surface. The surface states can be characterized by their momenta due to translation invariance. The Floquet eigenvalues of these states come in complex conjugate pairs rather than being equal to ±1. If the amplitude of the radiation is small, we find some unusual bulk-boundary relations: the Floquet eigenvalues of the surface states lie at the extrema of the Floquet eigenvalues of the bulk system when the latter are plotted as a function of the momentum perpendicular to the surface, and the peaks of the Fourier transforms of the surface state wave functions lie at the momenta where the bulk Floquet eigenvalues have extrema. For the case of zero surface momentum, we can analytically derive interesting scaling relations between the decay lengths of the surface states and the amplitude and penetration depth of the radiation. For topological insulators, we again find that circularly polarized radiation can generate states on the surfaces; these states have much larger decay lengths (which can be tuned by the radiation amplitude) than the topological surface states which are present even in the absence of radiation. Finally, we show that radiation can generate surface states even for trivial insulators.

Conselho Nacional de Desenvolvimento Científico e Tecnológico / The observation of the quantum spin Hall effect in the HgTe/CdTe heterostructure triggered the study of materials exhibiting a spin polarized electronic current at their surfaces/ interfaces. These states are topologically protected against perturbations preserving time reversal symmetry and presenting a linear dispersion, forming a Dirac cone. However, non-magnetic perturbations (that preserve time reversal symmetry) will certainly affect these surface/interface states. In this work we user the density functional theory to characterize the topologically protected states of the (001) HgTe/CdTe heterostructure. We observed that for a correct description of the HgTe band structure we use a GGA+U method. The topological states showed a Rashba-like in-plane spin texture. We analyzed the effects of external pressures and electric fields in the HgTe/CdTe heterostructures. We show that these perturbations modify the energetics and dispersion of the protected states, although not destroying the topological phase. Also, we study defects like antisite, vacancy and a Fe magnetic impurity at the interface of the (001) HgTe/CdTe heterostructure. We show that the antisite and the vacancy do not affect the spin polarization nor the energy dispersion of the protected states. On the other hand, the magnetic impurity significantly affects the topological states, degrading the spin polarization for the states close to the magnetic impurity and inducing out-of-plane spin components. Further, we study the (001) HgTe surface for different thicknesses of the HgTe sample, and with different terminations (Hg and Te). To the (001) HgTe samples with a thickness of 38 Å , the spin polarized states do not show a linear dispersion, however, when the thickness is increased we observe the formation of spin-polarized surface states with linear dispersion, characterizing the formation of a Dirac cone. Also, we show that biaxial pressures modify the energy dispersion of the spin polarized states. Finally, we study materials that turn topological insulators under external pressures as the anti-perovskite structures Sr3BiN and Ca3BiN, using the self-consistent GW method. We show that these materials present an inversion of the Bi-pz and Bi-s band edge states when subjected to biaxial tensile stress. We conclude that these materials can be characterized Topological Insulators under pressure. / A observação do efeito Spin Hall Quântico na heteroestrutura HgTe/CdTe motivou o estudo de materiais que exibem uma corrente eletrônica spin-polarizada nas suas interfaces/ superfícies. Estes estados são topologicamente protegidos frente a perturbações que preservam a simetria de reversão temporal e apresentam uma dispersão linear formando um Cone de Dirac. Entretanto, perturbações não-magnéticas (que preservam a reversão temporal) irão certamente afetar estes estados de interface/superfície. Neste trabalho, usamos a Teoria do Funcional da Densidade (DFT), para caracterizar os estados topologicamente protegidos da heteroestrutura HgTe/CdTe (001), que é um Isolante Topológico (IT) 2D. Para uma descrição mais correta das posições dos níveis na estrutura de bandas do HgTe, nós usamos o método GGA+U. Na heteroestrutura, a caracterização dos estados topologicamente protegidos mostrou uma textura de spin no plano da interface, do tipo Rashba. Analisamos os efeitos de perturbações externas na heteroestrutura HgTe/CdTe (001), como pressões e campo elétrico. Mostramos que ambas perturbações modificam a energia do ponto de cruzamento e a dispersão dos estados protegidos, mas não destroem a fase topológica. Estudamos também a presença de defeitos na interface HgTe/CdTe (001), como um anti-sítio, uma vacância e uma impureza magnética de Fe. A presença de um anti-sítio e de uma vacância não afetam a polarização de spin dos estados protegidos e nem sua dispersão. Por outro lado, a presença de uma impureza magnética afeta significantemente estes estados, degradando a polarização de spin para os estados próximos a impureza magnética e fazendo que o sistema apresente componentes de spin fora do plano da interface/superfície. Além disso, estudamos a superfície de HgTe com diferentes espessuras (38, 64, e 129 Å ) e terminações (Hg e Te). Para as estruturas com uma espessura de 38 Å , os estados com polarização de spin não apresentam uma dispersão linear, entretanto, quando aumentamos a espessura do material, observamos a formação dos estados de superfície com uma dispersão linear e polarização de spin, caracterizando a formação do cone de Dirac. Mostramos também, que pressões biaxiais modificam a dispersão dos estados com polarização de spin. Realizamos um estudo de materiais que são Isolantes Topológicos quando submetidos a pressões externas. Neste caso estudamos as estruturas antiperovsquitas Sr3BiN e Ca3BiN, usando método GW auto-consistente. Mostramos que esses materiais apresentam uma inversão dos níveis de energia Bi-pz e Bi-s quando sujeitos a pressão externa biaxial distensiva. Concluímos que estes materiais podem ser caracterizados como Isolantes Topológicos sob pressão.

Cette thèse présente de nouveaux développements en détection de particules chargées et traitement tout-numérique d'impulsions pour application à l'analyse avec des faisceaux d'ions rapides (IBA). Un ensemble de 16 détecteurs gravés sur une puce de Si est mis en œuvre, ce qui fournit un angle solide de détection environ 100 fois plus grande que celle des détecteurs utilisés auparavant pour l'IBA. Seize chaines d'acquisition sont également mises en œuvre avec une approche 'tout-numérique' pour le traitement des signaux issus des détecteurs. Dans son ensemble, le système ainsi développé a une résolution en énergie équivalent à celle des détecteurs standards. La considérable quantité d'information ainsi générée est traitée de manière cohérente en ajustant des spectres en énergie simulé aux spectres mesurés grâce à un algorithme de recuit simulé, avec le NDF DataFurnace. Les grandes angles solides disponibles sont exploitées pour des études par rétrodiffusion de Rutherford (RBS) et canalisation d'ions de l'isolant topologique Bi2Se3 enrichi en fer en vue d'études de l'effet thermoélectrique, de spintronique ou encore la computation quantique, ainsi que pour des études par RBS et analyse par réactions nucléaires (NRA) de matériaux pour la photovoltaïque organique, basés sur tetraphenyldibenzoperiflanthene (DBP) comme photo-absorbant avec oxydes de métaux de transition pour injection de charge. / This thesis presents new developments in charged particle detection and digital pulse processing for application in analysis with fast ion beams - Ion Beam Analysis (IBA). In particular a charged particle detector array, consisting of 16 independent charged particle detectors on a single silicon chip is implemented giving an overall solid angle of detection around two orders of magnitude greater than the standard charged particle detectors used in IBA. Sixteen parallel data acquisition channels are implemented using a fully digital approach for nuclear pulse processing. The overall system has an energy resolution equivalent to that of standard detectors. The large amount of data generated is handled in a self-consistent way by spectrum fitting with a simulated annealing algorithm via the NDF DataFurnace. The large solid angles thus achieved are exploited in Rutherford Backscattering Spectrometry (RBS) and ion channelling studies of the topological insulator Bi2Se3 enriched in Fe, in view of studies of the thermo-electric effect, spintronics and quantum computing, and in RBS and Nuclear Reaction Analysis (NRA) studies of organic photovoltaic materials based on tetraphenyldibenzoperiflanthene (DBP) as the photo-absorber and transition metal oxide charge injectors.

This thesis was inspired by the discovery of Bi14Rh3I9, the first so-called weak three-dimensional topological insulator (3D-TI) and has been concerned with the topic of TIs in general. Two aspects were tackled to gain a deeper understanding of this new state of matter. On one hand, the expansion of the material’s basis and on the other hand developing a simple model of the structure and analysing it via density-functional theory (DFT) based methods. To discover new materials, a systematic investigation of the metal-rich parts of the bismuth–platinum-metal–iodine phase systems was conducted. It led to six new phases among the bismuth subiodides. Some of which, e.g. Bi14Rh3I9, share a honeycomb network of platinum-metal-centred bismuth-cubes and are the seed of a family of materials with this structural motive. The others show strand-like structures or layered structures with platinum-platinum bonds. The latter were so far unknown amongst bismuth subiodides. The honeycomb network was separately analysed and shown to host the TI properties. Structurally and electronically it can be seen as a “heavy graphene analogue”, which refers to the fact that graphene with hypothetical strong spin-orbit coupling (“heavy graphene”) was the first TI put forward by theoreticians. Apart from DFT-calculations, physical experiments confirmed the TI properties. Angle-resolved photoelectron spectroscopy (ARPES) was used to verify the electronic structure and scanning tunnelling microscopy and spectroscopy (STM and STS) to reveal the protected 1D edge states present at the cleaving surface of this material. As the arrangement of the honeycomb layer varies between the different known and newly discovered materials within this family of structures, this influence was also investigated. All further materials were also characterised by DFT-calculations and physical experiments, e.g. magnetisation and transport measurements. This thesis might give an experimental and theoretical basis for a deeper understanding of the TI state of matter. The 1D edge states on the surface of Bi14Rh3I9 could be a chance to handle spins and therefore propel spintronic research, or they could host Majorana fermions, which could be used as qubits in quantum computing.

In this thesis, we investigate the quantum transport properties of disordered three dimensional topological insulator (3DTI) nanostructures of BiSe and BiTe in detail. Despite their intrinsic bulk conductivity, we show the possibility to study the specific transport properties of the topological surface states (TSS), either with or without quantum confinement. Importantly, we demonstrate that unusual transport properties not only come from the Dirac nature of the quasi-particles, but also from their spin texture. Without quantum confinement (wide ribbons), the transport properties of diffusive 2D spin-helical Dirac fermions are investigated. Using high magnetic fields allows us to measure and separate all contributions to charge transport. Band bending is investigated in BiSe nanostructures, revealing an inversion from upward to downward bending when decreasing the bulk doping. This result points out the need to control simultaneously both the bulk and surface residual doping in order to produce bulk-depleted nanostructures and to study TSS only. Moreover, Shubnikov-de-Haas oscillations and transconductance measurements are used to measure the ratio of the transport length to the electronic mean free path ltr/le. This ratio is measured to be close to one for bulk states, whereas it is close to 8 for TSS, which is a hallmark of the anisotropic scattering of spin-helical Dirac fermions. With transverse quantum confinement (narrow wires or ribbons), the ballistic transport of quasi-1D surface modes is evidenced by mesoscopic transport measurements, and specific properties due to their topological nature are revealed at very low temperatures. The metallic surface states are directly evidenced by the measure of periodic Aharonov-Bohm oscillations (ABO) in 3DTI nanowires. Their exponential temperature dependence gives an unusual power-law temperature dependence of the phase coherence length, which is interpreted in terms of quasi-ballistic transport and decoherence in the weak-coupling regime. This remarkable finding is a consequence of the enhanced transport length, which is comparable to the perimeter. Besides, the ballistic transport of quasi-1D surface modes is further evidenced by the observation of non-universal conductance fluctuations in a BiSe nanowire, despite the long-length limit (L > ltr) and a high metallicity (many modes). We show that such an unusual property for a mesoscopic conductor is related to the limited mixing of the transverse modes by disorder, as confirmed by numerical calculations. Importantly, a model based on the modes' transmissions allows us to describe our experimental results, including the full temperature dependence of the ABO amplitude.

<p>The demand for the faster information transport and better computational abilities is ever increasing. In the last few decades, the electronic industry has met this requirement by increasing the number of transistors per square inch. This lead to the scaling of devices to tens of nm. However, the speed of the electronics is limited to few GHz. Using light, the operating speed of photonic devices can be much larger than GHz. But the photonic devices are diffraction limited and hence the size of photonic device is much larger than the electronic components. Plasmonics is an emerging field with light-induced surface excitations, and can manipulate the light at nanoscale. It can bridge the gap between electronics and photonics. </p> <p>With the present scaling of devices to few nm, the scientific community is looking for alternatives for continued progress. This has opened up several promising routes recently, including two-dimensional materials, quantum computing, topological computing, spintronics and valleytronics. The discovery of graphene has led to the immense interest in the field of two-dimensional materials. Two dimensional-materials have extraordinary properties compared to its bulk. This work discusses the applications of plasmonics in this emerging field of two-dimensional materials and for heat assisted magnetic recording.</p> <p>Black phosphorus is an emerging low-direct bandgap two-dimensional semiconductor, with anisotropic optical and electronic properties. It has high mobility and is promising for photo detection at infrared wavelengths due to its low band gap. We demonstrate two different plasmonic designs to enhance the photo responsivity of black phosphours by localized surface plasmons. We use bowtie antenna and bowtie apertures to increase the absorption and polarization selectivity respectively. Plasmonic structures are designed by numerical electromagnetic simulations, and are fabricated to experimentally demonstrate the enhanced photo responsivity of black phosphorus. </p> <p>Next, we look at another emerging two-dimensional material, bismuth telluride selenide (Bi₂Te₂Se). It is a topological insulator with an insulating bulk but conducting electronic surface states. These surface states are Dirac like, similar to graphene and can lead to exotic plasmonic phenomena. We investigated the optical properties of Bi₂Te₂Se and found that the bulk is plasmonic below 650 nm wavelength. We study the distinct surface plasmons arising from the bulk and surface state of the topological insulator, Bi₂Te₂Se. The propagating surface plasmons at a nanoscale slit in Bi₂Te₂Se are imaged using near-field scanning optical microscopy. The surface state plasmons are studied with a below band gap excitation of 10.6 µm wavelength and the surface plasmons of the bulk are studied with a visible wavelength of 633 nm. The surface state plasmon wavelength is 100 times shorter than the incident wavelength in sharp contrast to the plasmon wavelength of the bulk. </p> <p>Next, we look at the application of plasmonics in heat assisted magnetic recording (HAMR). HAMR is one of the next generation data storage technology that can increase the areal density to beyond 1 Tb/in². Near-field transducer (NFT) is a key component of the HAMR system that locally heats the recording medium by concentrating light below the diffraction limit using surface plasmons. In this work, we use density-based topology optimization for inverse design of NFT for a desired temperature profile in the recording medium. We first perform an inverse thermal calculation to obtain the required volumetric heat generation (electric field) for a desired temperature profile. Then an inverse electromagnetic design of NFT is performed for achieving the desired electric field. NFT designs for both generating a small heated spot size and a heated spot with desired aspect ratio in recording medium are demonstrated. The effect of waveguide, write pole and moving recording medium on the heated spot size is also investigated. </p>

Three-dimensional topological insulators (TIs) are a class of materials for which the bulk is insulating, while the surface is necessarily metallic. A band inversion that occurs in the presence of spin-orbit coupling, and conduction and valence bands with opposite parities are necessary conditions for the existence of this class of materials. The metallicity of the surface states appears as a consequence of the topology of the bulk and these states are characterized by massless Dirac dispersions and helical spin polarization that protect the surface states against backscattering. The robustness of the topological surface states further implies that they are not destroyed by non-magnetic impurities or defects. Since their initial conception, a vast amount of theoretical studies have predicted very interesting features stemming from the topological surface states. An example of that can be found when breaking the time-reversal symmetry by introducing magnetic order in the system, which can lead to exotic phenomena such as the quantum anomalous Hall effect. The properties exhibited by these systems are expected to be of high importance both in fundamental research as well as in technological applications. However, the major difficulty remains the access to purely topological surface states. The remaining bulk conductivity of the TIs such as Bi2Se3, Bi2Te3 or Sb2Te3 still hinders the experimental realization of some of the predicted phenomena. This highlights the need of high-quality bulk-insulating materials with ultra-clean surfaces and interfaces, which can only be achieved with delicate sample preparation and characterization methods. The present work is part of the effort to fabricate high-quality TI films in a controlled manner. This shall then allow more complex investigations, such as interface effects and possibilities to engineer the band structure of the TIs. The former will be explored mainly in the form of heterostructures of Bi2Te3 and magnetic insulating layers, whereas the latter will focus on the fabrication of Sb2Te3/Bi2Te3 heterostructures. Most of the important properties of the samples are measured under ultra-high vacuum conditions, ensuring reliable results. Furthermore, in situ capping with ordered Te also allows for more sophisticated ex situ experiments. In a first step, the optimization of Bi2Te3 thin films grown on Al2O3 (0001) substrates was explored. Spectroscopic and structural characterization measurements showed that it is possible to obtain consistently bulk-insulating TI films with good structural quality, despite the lattice mismatch between Bi2Te3 and Al2O3 (0001). Magnetoconductance measurements showed a prominent weak anti-localization effect, confirming the existence of two-dimensional surface states. In order to explore the consequences of breaking the time-reversal symmetry characteristic of TIs, Bi2Te3 was interfaced with several ferro- or ferrimagnetic insulating (FI) layers in heterostructures. EuO, Fe3O4, Y3Fe5O12 and Tm3Fe5O12 were chosen as possible candidates. Systematic optimization and characterization studies showed that interfaces of Bi2Te3 and EuO, as well as Fe3O4 on top of Bi2Te3, yield poor quality samples with significant chemical reactions between the layers. Nevertheless, high-quality Bi2Te3 could be grown on Fe3O4 (001), Fe3O4 (111), Y3Fe5O12 (111) and Tm3Fe5O12 (111). Clean interfaces and intact top topological surface states were confirmed by photoemission spectroscopy. Moreover, transport signatures of a gap opening in the topological surface states were found, namely a suppression of the weak anti-localization effect and the observation of the anomalous Hall effect. However, x-ray circular magnetic dichroism (XMCD) was not observed for any of the heterostructures. A key conclusion from this study is that the ferromagnetism induced by the magnetic proximity effect is too weak to be detected by XMCD. On hindsight, one can infer that the magnetic proximity effect cannot be strong since the bonding between the TI and the magnetic insulator substrate is of the van der Waals type, and not covalent like in transition metal oxides or metallic heterostructures. It is known that a charge compensation between electron- and hole-doping can be achieved when combining Bi2Te3 and Sb2Te3, which can also tune the position of the Dirac point. With this goal in mind, the fabrication of ternary (Bi(x)Sb(1−x))2Te3 compounds and Sb2Te3/Bi2Te3 heterostructures was explored in the next step. Although pure Sb2Te3 and (Bi(x)Sb(1−x))2Te3 did not yield good quality samples, the fabrication of Sb2Te3/Bi2Te3 heterostructures emerged as a promising alternative route. Photoelectron spectroscopy allowed not only to identify the crucial role of the first few Sb2Te3 top layers, which modulate the topological surface states, but also to characterize the intermixing of the TI layers at the interface. In a final study, Fe(1+y)Te thin films were grown on MgO (001) substrates employing a Te-limited growth method. This allowed to obtain nominally stoichiometric films, as evidenced by reflection high-energy electron diffraction, x-ray absorption spectroscopy, XMCD and x-ray diffraction measurements. This preliminary study opens the way for the investigation of TI/superconductor interfaces and to delve into the topological superconductivity arising from the proximity effect.

La spintronique classique utilise généralement des matériaux magnétiques pour produire un courant de spin à partir d’un courant de charge. Un autre moyen, plus récemment étudié, consiste à utiliser le couplage spin-orbite (SOC). Il permet de produire un courant de spin pur selon une direction transverse au courant de charge en tenant compte des principes de la mécanique quantique relativiste. Dans les matériaux à fort couplage spin-orbite, les courants de spin ainsi produits sont suffisamment importants pour imaginer les utiliser pour la commutation magnétique dans les dispositifs spintroniques. Le couplage spin-orbite, correspondant à une correction relativiste dans les équations du mouvement de l’électron, particule de spin 1/2, peut être grand dans des matériaux contenant des atomes lourds. Cela signifie qu’une conversion du courant de charge en courant de spin peut être obtenue en utilisant les propriétés de systèmes à fort SOC tel que le platine (Pt), le tungstène (W) ou le tantale (Ta), par exemple. Depuis peu, des systèmes électroniques bidimensionnels (2DEG), obtenus au niveau d’interfaces ou de surfaces particulières, ont démontré des propriétés permettant des effets d’inter-conversion particulièrement efficaces. En particulier des états Rashba ou des systèmes d’isolants topologiques, suscitent actuellement un fort engouement dans la communauté de la spintronique pour cette faculté d’inter-conversion spin-charge.Dans ce cadre particulier, depuis une dizaine d’années, les isolants topologiques ont été étudiés pour leurs propriétés électroniques non conventionnelles qui prennent racine dans la définition théorique de l’effet Hall quantique entier donnée par Thouless, ainsi que dans les travaux de Haldane dans le graphène et de Kane dans des systèmes semi-conducteurs à faible bande interdite pourvus d’un SOC fort. Ces systèmes 2D présentent des propriétés électriques intrigantes : ils sont isolants en volume et conducteurs en surface. Ces états de conductions sont pourvus d’une dispersion linéaire en énergie en fonction du vecteur d’onde k, comme dans le cas du graphène, avec une hélicité en spin déterminée.De nombreuses questions restent néanmoins ouvertes quant à la compréhension des mécanismes à l’origine de ces états de conduction en surface, mais également quant à la manière la plus simple de détecter ces états topologiques. En vue de leur intégration dans des dispositifs spintroniques et de la réalisation d’interface TI/Matériaux ferromagnétiques un certain nombre de questions se posent : comment préserver la nature des états topologiques à l’interface ? Quels matériaux utiliser et quelle est la nature atomique de l’interface (diffusion atomique) ? Quels sont les échanges électroniques à l’interface ? Etc.L’une des applications utilisant les propriétés des isolants topologiques, est d’utiliser les propriétés de conversion du courant de charge en courant de spin (et vice versa) afin de modifier ou commuter l’aimantation d’un élément ou mémoire ferromagnétique déposé directement (ou séparé par une couche tampon) sur le matériau topologique lui-même. Un tel système de bicouches ou multi-couches devrait être capable de s’intégrer dans une mémoire vive magnétique (MRAM) ou d’accroître le potentiel des disques électroniques (SSD) en raison du caractère permanent et non volatile de l’état d’aimantation du matériau. C’est dans ce cadre que s’inscrit cette thèse. / Conventional spintronics generally uses magnetic materials to produce a spin current from a current of charge. Another means, more recently studied, is the use of spin-orbit coupling (SOC). It makes possible to produce a pure current of spin in a direction transverse to the charge current, taking into account the principles of relativistic quantum mechanics. In materials with strong spin-orbit coupling, the spin currents are large enough to imagine using them for magnetic switching in spintronic devices. The spin-orbit coupling, corresponding to a relativistic correction in the equations of motion of the electron, a spin 1/2 particle, can be large in materials containing heavy atoms. This means that a conversion from charge current to spin current can be obtained using the properties of SOC systems such as platinum (Pt), tungsten(W) or tantalum (Ta) for example. Recently 2 dimensionnal electronic gas (2DEG), obtained at particular interfaces or surfaces, have demonstrated properties allowing particularly effective inter-conversion effects. In particular Rashba states or topological insulator systems, are currently arousing a strong interest in the spintronics community for this faculty of spin-charge conversion.In this particular context, over the last ten years or so, topological insulators have been studied for their electronic properties which are rooted in the theoretical definition of the integer quantum Hall effect given by Thouless, as well as in the work of Haldane in graphene and Kane in low bandgap semiconductor systems with a strong SOC. These systems have intriguing electrical properties: they are insulating in volume and conductive on the surfaces. These conductivity states have a linear energy dispersion as a function of the k-wave vector, as in the case of the graphene, with a determined spin helicity.Nevertheless, many questions remain open as the understanding of the mechanisms at the origin of these states of surface conduction, but also as to the simplest way to detect these topological states. In order to integrate in spintronic devices and to realize TI/Ferromagnetic materials interface, a number of questions arise: how to preserve the nature of the topological states at the interface? What materials should be used and what is the atomic nature of the interface (inter-mixing) ? What are the electronic exchanges at the interface? Etc.One of the applications using the properties of topological insulators, is to use the conversion properties of the charge current to spin current in order to modify or switch the magnetization of a ferromagnetic element or memory deposited directly (or separated by a buffer layer) on the topological material itself. Such a two-layer system or multilayer should be capable of integration into a magnetic random access memory (MRAM) or of increasing the potential of disks (SSD) due to the permanent and non-volatile nature of the magnetisation state of the material. This is framework of this thesis.

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Die Transporteigenschaften eines Elektronengases mit reduzierter Dimensionalität werden von den Welleneigenschaften der Elektronen bestimmt. Dies ermöglicht es, verschiedene Quanteneffekte, wie Quanteninterferenz, zu beobachten. Im ersten Teil dieser Arbeit werden geätzte Quantenringe und eindimensionale (1D) Verengungen, basierend auf AlxGa1-xAs/GaAs-Heterostrukturen, hinsichtlich ihrer Transporteigenschaften untersucht. Messungen des thermischen Rauschens im Gleichgewichtszustand zeigen, dass der Erwartungswert mit den Rauschspektren aller 1D Verengungen übereinstimmt, jedoch um bis zu 60 % bei allen Quantenringen überschritten wird. Rauschmessungen im thermischen Nichtgleichgewicht ergeben, dass der Wärmefluss in Quantenringen mithilfe einer globalen Steuerelektrode (Topgate) an- und ausgeschaltet werden kann. Die magnetische Widerstandsänderung der Quantenringe zeigt Oszillationen, die dem Aharonov-Bohm-Effekt zugeordnet werden. Die Beobachtbarkeit dieser Oszillationen hängt stark von dem Abkühlvorgang der Probe ab und die Oszillationen zeigen Hinweise auf ein Schwebungsmuster sowie auf Phasenstarre. Im zweiten Teil der Arbeit werden die Oberflächenzustände von exfolierten Bi2Se3 Mikroflocken untersucht. Für Mikroflocken mit metallischen Temperaturabhängigkeiten des Widerstandes wurde schwache Anti-Lokalisierung beobachtet. Diese Beobachtung deutet darauf hin, dass sich die magnetische Widerstandsänderung weniger ausschließlich aus den 2D Oberflächenkanälen als vielmehr aus einem geschichtetem Transport von 2D Kanälen im Volumenkörper zusammensetzt. Eine Mikroflocke mit halbleitenden Eigenschaften zeigt keine Hinweise auf solch einen geschichteten 2D Transport und es wird angenommen, dass ihre magnetische Widerstandsänderung ausschließlich von den 2D Oberflächenzuständen verursacht wird. / The transport properties of an electron gas with reduced dimensionality are dominated by the electron’s wave nature. This allows to observe various quantum effects, such as quantum interference. In the first part of this thesis etched quantum rings and one-dimensional (1D) constrictions, based on AlxGa1-xAs/GaAs heterostructures, are investigated with respect to their transport properties. Thermal noise measurements in equilibrium show that the expectation value agrees with the noise spectra of all 1D constrictions but is exceeded by up to 60 % for the noise spectra of all quantum rings. Noise measurements in thermal non-equilibrium reveal that the heat flow can be switched on and off for a quantum ring by a global top-gate. The measured magnetoresistance of the quantum rings shows oscillations that are attributed to the Aharonov-Bohm effect. The observability of these oscillations strongly depends on the cooling process of the sample and the oscillations show indications of a beating as well as phase rigidity. In the second part of the thesis the surface states of exfoliated Bi2Se3 microflakes are studied. For microflakes that show a metallic temperature dependence of the resistance weak anti-localization is observed. This observation suggests that the magnetoresistance is a result of layered transport of 2D channels in the bulk rather than just the surface 2D channels. A microflake with semiconducting characteristics does not show indications of such a 2D layered transport and its magnetoresistance is considered to be carried by the 2D surface states only.