In 1997 the Federal Communications Commission (FCC) released 300 MHz of spectrum between 5-6 GHz designated the unlicensed national information infrastructure (U-NII) band. The intention of the FCC was to provide an unlicensed band of frequencies that would enable high-speed wireless local area networks (WLANs) and facilitate wireless access to the national information infrastructure with a minimum interference to other devices. Currently, there is a lack of cost-effective technologies for developing U-NII band components. With the commercial market placing emphasis on low cost, low power, and highly integrated implementations of RF circuitry, alternatives to the large and expensive distributed element components historically used at these frequencies are needed. Silicon Germanium (SiGe) BiCMOS technology represents one possible solution to this problem. The SiGe BiCMOS process has the potential for low cost since it leverages mature Si process technologies and can use existing Si fabrication infrastructure. In addition, SiGe BiCMOS processes offer excellent high frequency performance through the use of SiGe heterojunction bipolar transistors (HBTs), while coexisting Si CMOS offers compatibility with digital circuitry for high level 'system-on-a-chip' integration. The work presented in this thesis focuses on the development of a SiGe RFIC front-end for operation in the U-NII bands. Specifically, three variants of a packaged low noise amplifier (LNA) and a packaged active x2 sub-harmonic mixer (SHM) have been designed, simulated and measured. The fabrication of the Rifts was through the IBM SiGe foundry; the packaging was performed by RF Micro devices. The mixer and LNA designs were fabricated on separate die, packaged individually, and on-chip matched to a 50 ohm system so they could be fully characterized. Measurements were facilitated in a coaxial system using standard FR4 printed circuit boards. The LNA designs use a single stage, cascoded topology. The input ports are impedance matched using inductive emitter degeneration through bondwires to ground. One version of the LNA uses an shunt inductor/series capacitor output match while the other two variation use a series inductor output match. Gain, isolation, match, linearity and noise figure (NF) were used to characterize the performance of the LNAs in the 5 - 6 GHz frequency band. The best LNA design has a maximum gain of 9 dB, an input VSWR between 1.6:1 and 2:1, an output match between 1.7:1 and 3.6:1, a NF better than 3.9 dB and an input intercept point (IIP3) greater than 5.4 dBm. The LNA operates from a 3.3 V supply voltage and consumes 4 mA of current. The SHM is an active, double-balance mixer that achieves x2 sub-harmonic mixing through two quadrature (I/Q) driven, stacked Gilbert-cell switching stages. Single-ended-to-differential conversion, buffering and I/Q phase separation of the LO signal are integrated on-chip. Measurements were performed to find the optimal operating range for the mixer, and the mixer was characterized under these sets of conditions. It was found that the optimal performance of the mixer occurs at an IF of 250-450 MHz and an LO power of -5 dBm. Under these conditions, the mixer has a measured conversion gain of 9.3 dB, a P_1-dB of -15.7 dBm and an 2LO/RF isolation greater than 35 dB at 5.25 GHz. At 5.775 GHz, the conversion gain is 7.7 dB, the P_1-dB is -15.0 dBm, and the isolation is greater than 35 dB. The mixer core consumes 9.5 mA from a 5.0 V supply voltage. This work is sponsored by RF Microdevices (RFMD)through the CWT affiliate program.The author was supported under a Bradley Foundation fellowship. / Master of Science

In-phase and quadrature (I/Q) signal generation is often required in modern transceiver architectures, such as direct conversion or low-IF, either for vector modulation and demodulation, negative frequency recovery in direct conversion receivers, or image rejection. If imbalance between the I and Q channels exists, the bit-error-rate (BER) of the transceiver and/or the image rejection ratio (IRR) will quickly deteriorate. Methods for correcting I/Q imbalance are desirable and necessary to improve the performance of quadrature transceiver architectures and modulation schemes. This thesis presents the design and characterization of a monolithic 5-6 GHz Silicon Germanium (SiGe) inductor-capacitor (LC) tank voltage controlled oscillator (VCO) with tunable polyphase outputs. Circuits were designed and fabricated using the Motorola 0.4 ìm CDR1 SiGe BiCMOS process, which has four interconnect metal layers and a thick copper uppermost bump layer for high-quality radio frequency (RF) passives. The VCO design includes full-wave electromagnetic characterization of an electrically symmetric differential inductor and a traditional dual inductor. Differential effective inductance and Q factor are extracted and compared for simulated and measured inductors. At 5.25 GHz, the measured Q factors of the electrically symmetric and dual inductors are 15.4 and 10.4, respectively. The electrically symmetric inductor provides a measured 48% percent improvement in Q factor over the traditional dual inductor. Two VCOs were designed and fabricated; one uses the electrically symmetric inductor in the LC tank circuit while the other uses the dual inductor. Both VCOs are based on an identical cross-coupled, differential pair negative transconductance -GM oscillator topology. Analysis and design considerations of this topology are presented with a particular emphasis on designing for low phase noise and low-power consumption. The fabricated VCO with an electrically symmetric inductor in the tank circuit tunes from 4.19 to 5.45 GHz (26% tuning range) for control voltages from 1.7 to 4.0 V. This circuit consumes 3.81 mA from a 3.3 V supply for the VCO core and 14.1 mA from a 2.5 V supply for the output buffer. The measured phase noise is -115.5 dBc/Hz at a 1 MHz offset and a tank varactor control voltage of 1.0 V. The VCO figure-of-merit (FOM) for the symmetric inductor VCO is -179.2 dBc/Hz, which is within 4 dBc/Hz of the best reported VCO in the 5 GHz frequency regime. The die area including pads for the symmetric inductor VCO is 1 mm x 0.76 mm. In comparison, the dual inductor VCO tunes from 3.50 to 4.58 GHz (27% tuning range) for control voltages from 1.7 to 4.0 V. DC power consumption of this circuit consists of 3.75 mA from a 3.3 V supply for the VCO and 13.3 mA from a 2.5 V supply for the buffer. At 1 MHz from the carrier and a control voltage of 0 V, the dual inductor VCO has a phase noise of -104 dBc/Hz. The advantage of the higher Q symmetric inductor is apparent by comparing the FOM of the two VCO designs at the same varactor control voltage of 0 V. At this tuning voltage, the dual inductor VCO FOM is -166.3 dBc/Hz compared to -175.7 dBc/Hz for the symmetric inductor VCO -- an improvement of about 10 dBc/Hz. The die area including pads for the dual inductor VCO is 1.2 mm x 0.76 mm. In addition to these VCOs, a tunable polyphase filter with integrated input and output buffers was designed and fabricated for a bandwidth of 5.15 to 5.825 GHz. Series tunable capacitors (varactors) provide phase tunability for the quadrature outputs of the polyphase filter. The die area of the tunable polyphase with pads is 920 ìm x 755 ìm. The stand-alone polyphase filter consumes 13.74 mA in the input buffer and 6.29 mA in the two output buffers from a 2.5 V supply. Based on measurements, approximately 15° of I/Q phase imbalance can be tuned out using the fabricated polyphase filter, proving the concept of tunable phase. The output varactor control voltages can be used to achieve a potential ±5° phase flatness bandwidth of 700 MHz. To the author's knowledge, this is the first reported I/Q balance tunable polyphase network. The tunable polyphase filter can be integrated with the VCO designs described above to yield a quadrature VCO with phase tunable outputs. Based on the above designs I/Q tunability can be added to VCO at the expense of about 6 mA. Future work includes testing of a fabricated version of this combined polyphase VCO circuit. / Master of Science

The advent of high-fT silicon CMOS/BiCMOS technologies has led to a dramatic upsurge in the research and development of radio and microwave frequency integrated circuits (ICs) in silicon. The integration of silicon-germanium heterojunction bipolar transistors (SiGe HBTs) into established "digital" CMOS processes has provided analog performance in silicon that is not only competitive with III-V compound-semiconductor technologies, but is also potentially lower in cost. Combined with improvements in silicon on-chip passives, such as high-Q metal-insulator-metal (MIM) capacitors and monolithic spiral inductors, these advanced RF CMOS and SiGe BiCMOS technologies have enabled complete silicon-based RF integrated circuit (RFIC) solutions for emerging wireless communication standards; indeed, both the analog and digital functionalities of an entire wireless system can now be combined in a single IC, also known as a wireless "system-on-a-chip" (SoC). This approach offers a number of potential benefits over multi-chip solutions, such as reductions of parasitics, size, power consumption, and bill-of-materials; however, a number of critical challenges must be considered in the integration of such SoC solutions. The focus of this research is the application of SiGe BiCMOS technology to on-going challenges in the development of receiver components for high speed wireless data networks. The research seeks to drive SoC integration by investigating circuit topologies that eliminate the need for off-chip components and are amenable to complete on-chip integration. The first part of this dissertation presents the design, fabrication, and measurement of a 5--6GHz sub-harmonic direct-conversion-receiver (DCR) front-end, implemented in the IBM 0.5um 5HP SiGe BiCMOS process. The design consists of a fully-differential low-noise amplifier (LNA), a set of quadrature (I and Q)x~2 sub-harmonic mixers, and an LO conditioning chain. The front-end design provides a means to address performance limitations of the DCR architecture (such as DC-offsets, second-order distortion, and quadrature phase and amplitude imbalances) while enabling the investigation of high-frequency IC design complications, such as package parasitics and limited on-chip isolation. The receiver front-end has a measured conversion gain of ~18dB, an input second-order intercept point of +17.5dBm, and a noise figure of 7.2dB. The quadrature phase balance at the sub-harmonic mixer IF outputs was measured in the presence of digital switching noise; 90<degree> balance was achieved, over a specific range of LO power levels, with a square wave noise signal injected onto the mixer DC supply rails. The susceptibility of receiver I/Q balance to mixed-signal effects in a SoC environment motivates the second part of this dissertation --- the design of a phase and amplitude tunable, quadrature voltage-controlled oscillator (QVCO) for the on-chip synthesis of quadrature signals. The QVCO design, implemented in the Freescale (formerly Motorola) 0.18um SiGe:C RFBiCMOS process, uses two identical, differential LC-tank VCOs connected such that the two oscillator outputs lock in quadrature to the same frequency. The QVCO designs proposed in this work provide the additional feature of phase-tunability, i.e. the relative phase balance between the quadrature outputs can be adjusted dynamically, offering a simulated tuning range of ~90<degree>+/-10â ¹degree> in addition, a variable-gain buffer/amplifier circuit that provides amplitude tunability is introduced. One potential application of the QVCO is in a self-correcting RF receiver architecture, which, using the phase and amplitude tunability of the QVCO, could dynamically adjust the IF output quadrature phase and amplitude balance, in near real-time, in the analog-domain. The need for high-quality inductors in both the DCR and QVCO designs motivates the third aspect of this dissertation --- the characterization and modeling of on-chip spiral inductors with patterned ground shields, which are placed between the inductor coil and the underlying substrate in order to improve the inductor quality factor (Q). The shield prevents the coupling of energy away from the inductor spiral to the typically lossy Si substrate, while the patterning disrupts the flow of induced image currents within the shield. The experimental effort includes the fabrication and testing of a range of inductors with different values, and different types of patterned ground shields in different materials. Two-port measurements show a ~50% improvement in peak-Q and a ~20% degradation in self-resonant frequency for inductors with shields. From the measured results, a scalable lumped element model is developed for the rapid simulation of spiral inductors with and without patterned ground shields. The knowledge gained from this work can be combined and applied to a range of future RF/wireless SoC applications. The designs developed in this dissertation can be ported to other technologies (e.g. RF CMOS) and scaled to other frequency ranges (e.g. 24GHz ISM band) to provide solutions for emerging applications that require low-cost, low-power RF/microwave circuit implementations. / Ph. D.

Advances in wireless technology have recently led to the potential for higher data rates and greater functionality. Wireless home and business networks and 3G and 4G cellular phone systems are promising technologies striving for market acceptance, requiring low-cost, low-power, and compact solutions. One approach to meet these demands is system-on-a-chip (SoC) integration, where RF/analog and digital circuitry reside on the same chip, creating a mixed-signal environment. Concurrently, there is tremendous incentive to utilize Si-based technologies to leverage existing fabrication and design infrastructure and the corresponding economies of scale. While the SoC approach is attractive, it presents major challenges for circuit designers, particularly in the design of monolithic voltage controlled oscillators (VCOs). VCOs are important components in the up or downconversion of RF signals in wireless transceivers. VCOs must have very low phase noise and spurious emissions, and be extremely power efficient to meet system requirements. To meet these specifications, VCOs require high-quality factor (Q) tank circuits and reduction of noise from active devices; however, the lack of high-quality monolithic inductors, along with low noise transistors in traditional Si technologies, has been a limiting factor. This thesis presents the design, characterization, and comparison of three monolithic 3-4 GHz VCOs and an integrated 5-6 GHz VCO with tunable polyphase outputs. Each VCO is designed around a differential -G_{M} core with an LC tank circuit. The circuits exploit two Si-based device technologies: Silicon Germanium (SiGe) Heterojunction Bipolar Transistors (HBTs) for a cross-coupled collectors circuit and Graded-Channel MOS (GC-MOS) transistors for a complementary (CMOS) implementation. The circuits were fabricated using the Motorola 0.4 μm CDR1 SiGe BiCMOS process, which consists of four interconnected metal layers and a thick copper (10 μm) metal bump layer for improved inductive components. The VCO implementations are targeted to meet the stringent phase noise specifications for the GSM/EGSM 3G cellular standard. The specifications state that the VCO output cannot exceed -162 dBc/Hz sideband noise at 20 MHz offset from the carrier. Simultaneously, oscillators must be designed to address other system level effects, such as feed-through of the local oscillator (LO). LO feed-through directly results in self-mixing in direct conversion receivers, which gives rise to unwanted corrupting DC offsets. Therefore, a system-level strategy is employed to avoid such issues. For example, multiplying the oscillator frequency by two or four times can help avoid self-mixing during downconversion by moving the LO out of the bandwidth of the RF front-end. Meanwhile, direct conversion or low-IF (intermediate frequency) receiver architectures utilize in-phase and quadrature (I/Q) downconversion signal recovery and image rejection. Any imbalance between the I and Q channels can result in an increase in bit-error-rate (BER) and/or decrease in the image rejection ratio (IRR). To compensate for such an imbalance, an integrated tunable polyphase filter is implemented with a VCO. Control voltages between the differential I and Q channels can be individually controlled to help compensate for I/Q mismatches. This thesis includes an introduction to design flow and layout strategies for oscillator implementations. A detailed comparison of the advantages and disadvantages of the SiGe HBTs and GC-MOS device in 3-4 GHz VCOs is presented. In addition, an overview of full-wave electromagnetic characterization of differential dual inductors is given. The oscillators are characterized for tuning range, output power, and phase noise. Finally, new measurement techniques for the 5-6 GHz VCO with a tunable polyphase filter are explored. A comparison between the time and frequency approaches is also offered. / Master of Science