Thermal control in spacecraft will be increasingly important as the spacecraft grows smaller and more compact. Such spacecraft with low thermal mass will have to be designed to retain or reject heat more efficiently. The passive smart radiation device (SRD) is a new type of thermal control material for spacecraft. Current space thermal control systems require heaters with an additional power penalty to maintain spacecraft temperatures during cold swings. Because its emissivity can be changed without electrical instruments or mechanical part, the use of SRD decreases the request of spacecraft power budget. The (SRD) based on VO2 films is one of the most important structures of the functional thermal control surface, being lighter, more advanced and without a moving devices. A large portion of the heat exchange between an object in space and the environment is performed throughout radiation, which is in turn determined by the object surface properties. The modulation device is coated on the spacecraft surface and thus provides a thermal window that can adapt to the changing conditions in orbit. VO2 is well known to have a temperature driven metal to insulator transition ≈ 68ᴼC accompanying a transformation of crystallographic structure, from monoclinic (M-phase, semiconductor) at temperature below 68ᴼC to tetragonal (R-phase, metal) at temperature above 68ᴼC. This transition temperature is accompanied by an increase of infrared reflectivity and a decrease of infrared emissivity with increasing temperature. This flexibility makes VO2 potentially interesting for optical, electrical, and electro-optical switches devices, and as window for energy efficiency buildings applications. This study reports on effect of thickness on VO2 as well as the effect of proton irradiation on VO2 for active smart radiation device (SRD) application. VO2 was deposited on mica by Pulsed laser deposition techniques. The thickness of the film was varied by varying the deposition time. To characterize VO2 the following techniques were performed: XRD, AFM, SEM, TEM, XPS, RBS, RAMAN and transport measurements for optical properties. The effect of proton irradiation was observed using the SEM, where the change in structure, from crystal grains to rods, was observed. / Physics / M.Sc. (Physics)

Thermal control in spacecraft will be increasingly important as the spacecraft grows smaller and more compact. Such spacecraft with low thermal mass will have to be designed to retain or reject heat more efficiently. The passive smart radiation device (SRD) is a new type of thermal control material for spacecraft. Current space thermal control systems require heaters with an additional power penalty to maintain spacecraft temperatures during cold swings. Because its emissivity can be changed without electrical instruments or mechanical part, the use of SRD decreases the request of spacecraft power budget. The (SRD) based on VO2 films is one of the most important structures of the functional thermal control surface, being lighter, more advanced and without a moving devices. A large portion of the heat exchange between an object in space and the environment is performed throughout radiation, which is in turn determined by the object surface properties. The modulation device is coated on the spacecraft surface and thus provides a thermal window that can adapt to the changing conditions in orbit. VO2 is well known to have a temperature driven metal to insulator transition ≈ 68ᴼC accompanying a transformation of crystallographic structure, from monoclinic (M-phase, semiconductor) at temperature below 68ᴼC to tetragonal (R-phase, metal) at temperature above 68ᴼC. This transition temperature is accompanied by an increase of infrared reflectivity and a decrease of infrared emissivity with increasing temperature. This flexibility makes VO2 potentially interesting for optical, electrical, and electro-optical switches devices, and as window for energy efficiency buildings applications. This study reports on effect of thickness on VO2 as well as the effect of proton irradiation on VO2 for active smart radiation device (SRD) application. VO2 was deposited on mica by Pulsed laser deposition techniques. The thickness of the film was varied by varying the deposition time. To characterize VO2 the following techniques were performed: XRD, AFM, SEM, TEM, XPS, RBS, RAMAN and transport measurements for optical properties. The effect of proton irradiation was observed using the SEM, where the change in structure, from crystal grains to rods, was observed. / Physics / M.Sc. (Physics)

Les travaux présentés dans ce manuscrit portent sur la conception, simulation et réalisation des nouvelles structures des commutateurs hyperfréquences basées sur l’intégration des couches minces des matériaux innovants fonctionnels tels que les matériaux à changement de phase (PCM) et les matériaux à transition de phase (PTM). Le principe de fonctionnement de ces composants repose sur le changement de résistivité présenter par ces matériaux. Nous avons exploité le changement de résistivité réversible du GeTe de la famille des matériaux à changement de phase (PCM) entre les deux états : amorphe à forte résistivité et cristallin à faible résistivité, pour réaliser une nouvelle structure d’un simple commutateur SPST. Ensuite, nous avons intégré ce commutateur dans une nouvelle structure de la matrice de commutation DPDT (Double Port Double Throw) à base de PCM pour l’application dans la charge utile du satellite. Nous avons utilisé la transition isolant-métal présenté par le dioxyde de vanadium (VO2) de la famille des matériaux à transition de phase, pour réaliser une nouvelle structure de commutateur simple à deux terminaux sur une très large bande de fréquence (100 MHz–220 GHz). / The work presented in this manuscript focuses on the design, simulation and realization of new microwave switches structures based on the integration of thin layers of innovative functional materials such as phase change materials (PCM) and phase transition materials. (PTM). The operating principle of these components is based on the change of resistivity present by these materials. We exploited the reversible resistivity change of GeTe of phase change materials family between the two states: amorphous with high resistivity and crystalline with low resistivity to realize a new structure of SPST switch. Then, we have integrated this switch structure on a new structure of DPDT (Double Port Double Throw) switch matrix based on phase change materials for application in satellite payload. We have used the insulatingmetal transition presented by the vanadium dioxide (VO2) of phase transition materials family to realize a new two terminals simple switch structure on a very wide frequency band (100 MHz–220 GHz).

Ces travaux de recherche portent sur la conception et la réalisation de commutateurs RF basées sur l’intégration de matériaux innovants fonctionnels tels que le dioxyde de vanadium (VO2) et les alliages de chalcogénures de types Ge2Sb2Te5 (GST) et GeTe. Le principe de fonctionnement de ces composants repose sur le changement de résistivité que présentent ces matériaux. Le VO2 possède une transition Isolant-Métal (MIT) autour de 68°C à travers laquelle le matériau passe d’un état isolant (forte résistivité) à un état métallique (faible résistivité). La transition MIT présente l’intérêt de pouvoir être initiée sous l’effet de plusieurs types de stimuli externes (thermique, électrique et optique) avec de faibles temps de commutation. Les alliages de types GST et GeTe ont la particularité de commuter réversiblement entre un état amorphe à forte résistivité à un état cristallin à faible résistivité suite à un traitement thermique spécifique. Les commutateurs à base de GST ou de GeTe présentent l'avantage de pouvoir opérer en mode bistable car le changement de résistivité présenté par ces matériaux est de type non volatile. Les composants réalisés ont de bonnes performances électriques (isolation et pertes d’insertion) sur une large bande. Nos travaux de recherche visent à proposer une solution alternative aux solutions classiques (semi-conducteurs et MEMS-RF) pour réaliser des commutateurs RF qui peuvent être par la suite utilisés dans la conception des dispositifs reconfigurables (filtres, Antennes). / This research work focuses on the design and realization of RF switches based on the integration of new materials such as vanadium dioxide (VO2), Ge2Sb2Te5 (GST) and GeTe chalcogenides alloys. The operating principle of these devices is based on the resistivity change presented by these materials. VO2 exhibits a Metal-Insulator transition (MIT) around 68°C for which the material changes from an insulating state (high resistivity) to a metallic one (low resistivity). The MIT transition can be triggered in different ways (thermally, electrically and optically) with low switching time. GST and GeTe alloys have the particularity to be reversibly switched between a high resistive-amorphous state to low resistive-crystalline state, under a specific heat treatment. Thanks to the non-volatile resistivity change presented by these materials, GST/GeTe-based switches are able to operate in bistable mode. The fabricated devices exhibit good electrical performances (insertion loss and isolation) over a broadband. The aim of our work is to propose an alternative solution to conventional technologies (semiconductors and RF-MEMS), to design RF switches that can be used afterward in the design of reconfigurable devices (filters, antennas).

Le travail de thèse présenté dans ce manuscrit traite du développement de dispositifs à base de dioxyde de vanadium VO₂ et de méta-surfaces dans le moyen infrarouge pour des applications passives et une intégration sur des lasers à cascade quantique (QCL). Ce travail a permis l'élaboration de nouvelles conditions de dépôt du matériau à changement de phase VO₂ par ablation laser pulsé à des températures compatibles avec les hétérostructures de III-V utilisées en optoélectronique. Les caractérisations des couches minces déposées montrent un changement de la réflectivité et de la conductivité électrique entre l'état isolant à basse température et l'état métallique à haute température autour de 68°C (341 K). Des développements ont ensuite été menés sur l'emploi d'un réseau de méta-surfaces permettant d'obtenir une couche homogène d'indice de réfraction effectif résonnant. Ces méta-surfaces sont constituées de résonateurs à anneau fendu dont la fréquence de résonance peut être ajustée par le choix de leurs paramètres géométriques et des matériaux les constituant. Une modulation optique de plus de 100cm-1 du pic de la résonance a été obtenue lors de la transition de phase avec des méta-surfaces déposées sur un film de VO₂. Ce résultat est très prometteur pour la conception de dispositifs monolithiques, robustes, compacts, accordables en fréquence et dont les propriétés optiques ne dépendent que de la température de la couche de VO₂.Enfin, ce travail étudie la fonctionnalisation des QCL dans le moyen infrarouge (7-8 µm) par des couches de VO₂ et de méta-surfaces. Il vise à comprendre l’influence des couches intégrées sur les propriétés d’émission. Afin de garantir une bonne interaction entre ces couches et le mode guidé du laser tout en ayant des pertes optiques faibles, des nouveaux guides d'onde ont été modélisés, puis les premiers QCL à base de VO₂ ont été démontrés et une température maximale de fonctionnement de 334 K a été mesurée. / The thesis work presented in this manuscript deals with the development of vanadium dioxide VO₂ and meta-surfaces based devices in the mid-infrared for passive applications and an integration on quantum cascade lasers (QCL).This work enabled the elaboration of new deposition conditions for the VO₂ phase change material by pulsed laser ablation at temperatures compatible with III-V heterostructures used in optoelectronics. The characterizations of the VO₂ coated thin films show a change in reflectivity and in electric conductivity between the insulating state at low temperature and the metallic state at high temperature around 68°C (341 K).Developments were then carried out on the use of a meta-surfaces array in order to obtain an homogeneous layer of resonant effective refractive index. These meta-surfaces are constituted by split-ring resonators, whose resonance frequency can be adjusted by choosing their geometric parameters and the materials they are made of. An optical modulation of more than 100cm-1 of the resonance peak has been obtained during the phase transition with meta-surfaces deposited on a VO₂ layer. This result is very promising for the conception of monolithic, robust, compact, frequency tunable devices and whose optical properties only depend on the VO₂ layer temperature.Finally, this work studies the functionalization of mid-infrared QCL (7-8 µm) with VO₂ and meta-surfaces layers. It aims at understanding the influence of the integrated layers on the emission properties. In order to ensure a good interaction between these layers and the laser guided mode while having low optical losses, new waveguides were modeled, then the first VO₂ based QCL have been demonstrated and a maximum operating temperature of 334 K has been measured.

Transition metal oxides and chalcogenides are an ideal platform for demonstrating and investigating many interesting electronic phases of matter. These phases emerge as a result of collective many body interactions among the electrons. The omnipresent electron, depending on its interaction with other electrons and with the underlying lattice, can generate diverse phases of matter with exotic physical properties. The ultimate objective of Materials Science is to provide a complete microscopic understanding of these myriad electronic phases of matter. A proper understanding of the collective quant-tum behaviour of electrons in different system can also help in designing and tuning new electronic phases of matter that may have strong impact in the field of microelectronics, well beyond that predicted by Moore s law. Strong electron correlation effects produce a wide spectrum of ground state prop-retires like superconductivity, Metal Insulator Transition (MIT), charge-orbital ordering and many more. Similarly, different spin interactions among electrons, essentially due to various kinds of exchange coupling, give rise to varying magnetic ground state prop-retires like ferromagnetism, anti-ferromagnetism, spin glass, among others. The main objective of this thesis is to understand and rationalize diverse electronic and magnetic phases of matter in some selected strongly correlated systems. In chapter 1 we have provided an overview of various electronic and magnetic phases of matter which are relevant and necessary for understanding the chapters that follow. The first part of this chapter describes the fundamental concepts of the so called Metal Insulator Transition (MIT). A small section is dedicated to the subtle interactions among electrons and lattice that actually drive a system from a highly conducting metallic state to a strongly resistive insulating state. The second part of this chapter offers a compilation of different magnetic ground states which are discussed in detail in the last two chapters. In Chapter 2, we have explained various methodologies and experimental tech-antiques that have been used in the work reported in this thesis. In Chapter 3, we have provided a detailed understanding of the MIT in different polymorphic forms of Vanadium dioxide (VO2). Although VO2 exhibits a number of polymorphic forms, only the rutile/monoclinic VO2 phase has been studied extensively compared to other polymorphic forms. This phase shows a well-established MIT across ∼340 K, which has been extensively investigated in order to understand the relative importance of many body electron correlation effects arising primarily from on-site Coulomb interactions within the Vanadium 3d manifold, and single electron effects flounced by the dimerization of Vanadium atoms. Unlike the rutile phase of VO2, little is known about the MIT appearing across 212 K in the metastable B-phase of VO2. This phase shows dimerization of only half of the Vanadium atoms in the insulating state, in contrast to rutile/monoclinic VO2, which show complete dimerization. There is a long standing debate about the origin of the MIT in the rutile/monoclinic phase, that contrasts the role of the many-body Hubbard U term, with single particle effects of the dimerization. In light of this debate, the MIT in the B-phase offers a unique opportunity to understand and address the competition between many body and single particle effects, that has been unresolved over several decades. In this chapter we have investigated different polymorphs of VO2 to understand the underlying electronic structure and the nature of the MIT in these polymorphic forms. The MIT in VO2 B phase is very broad in nature. X-ray photoemission and optical conductivity data indicate that in case of VO2 B phase both correlation effects and dimerization is necessary to drive the MIT. We have also established that the correlation effects are more prominent for VO2 B phase compared to rutile/monoclinic phase. In Chapter 4, we have discussed the electronic structure of LaTiO3 (LTO)-SrTiO3 (STO) system. At the interface between polar LTO and non-polar (STO) oxides, an unique two dimensional electron gas (2DEG) like state appears, that exhibits a phenomenal range of unexpected transport, magnetic, and electronic properties. Thus, this interface stands as a prospective candidate for not only fundamental scientific investigation, but also application in technological and ultimately commercial frontiers. In this chapter, using variable energy Hard X-ray photoemission spectroscopy (HAXPES), we have experimentally investigated the layer resolved evolution of electronic structure across the interface in LTO-STO system. HAXPES results suggest that the interface is more coherent in nature and the coherent to incoherent feature ratio changes significantly as we probe deeper into the layer In chapter 5, we have investigated the electronic structure of the chemically exfoliated trigonal phase of MoS2. This elusive trigonal phase exists only as small patches on chemically exfoliated MoS2, and is believed to control functioning of MoS2 based devices. Its electronic structure is little understood, with total absence of any spec-troscopic data, and contradictory claims from theoretical investigations. We have ad-dressed this issue experimentally by studying the electronic structure of few layered chemically exfoliated MoS2 systems using spatially resolved X-ray photoemission spec-otoscopy and micro Raman spectroscopy in conjunction with electronic structure calculations. We have established that the ground state of this unique trigonal phase is actually a small gap (∼90 meV) semiconductor. This is in contrast with most of the claims in existing literature. In chapter 6, we have re-examined and revaluated the electronic structure of the late 3d transition metal monoxides (NiO, FeO, and CoO) using a combination of HAX-PES and state-of-the-art theoretical calculations. We have observed a strong evolution in the valence band spectra as a function of excitation energy. Theoretical results show that a combined GW+LDA+DMFT scheme is essential for explaining the observed experimental findings. Additionally, variable temperature HAXPES measurement In chapter 8, we have differentiated the surface and the bulk electronic structure in Sr2FeMoO6 and also have provided a new route to increase the Curie temperature of this material. Sr2FeMoO6 is well known for its high Curie temperature (Tc ∼410 K), half-metallic ferromagnetism, and a spectacularly large tunnelling magnetoresistance. The surface electronic structure of Sr2FeMoO6 is believed to be different from the bulk; leading to a Spin-Valve type Magnetoresistance. We have carried out variable energy HAXPES on Sr2FeMoO6 to probe electronic structure as a function of surface depth. Our experimental results indicate that surface is more Mo6+ rich. We have also demonstrated what we believe is the first direct experimental evidence of hard ferro-magnetism in the surface layer using X Ray Magnetic Circular Dichroism (XMCD) with dual detection mode. In the second part of this chapter we have designed a new route to increase the Curie temperature and have been successfully able to achieve a Curie temperature as high as 515 K.

[ES] La búsqueda de nuevas soluciones e ideas innovadoras en el campo de la fotónica de silicio mediante la integración de nuevos materiales con prestaciones únicas es un tema de alta actualidad entre la comunidad científica en fotónica y con un impacto potencial muy alto. Dentro de esta temática, esta tesis pretende contribuir hacia una nueva generación de dispositivos fotónicos basados en la integración de óxidos metálicos en tecnología de silicio. Los óxidos metálicos elegidos pertenecen a la familia de óxidos conductores transparentes (TCO), concretamente el óxido de indio y estaño (ITO) y el óxido de cadmio (CdO), y materiales de cambio de fase (PCM) como el dióxido de vanadio (VO2). Dichos materiales se caracterizan especialmente por una variación drástica de sus propiedades optoelectrónicas, tales como la resistividad o el índice de refracción, frente a un estímulo externo ya sea en forma de temperatura, aplicación de un campo eléctrico o excitación óptica. De esta forma, nuestro objetivo es diseñar, fabricar y demostrar experimentalmente nuevas soluciones y dispositivos clave tales como dispositivos no volátiles, desfasadores y dispositivos con no linealidad óptica. Tales dispositivos podrían encontrar potencial utilidad en diversas aplicaciones que comprenden las comunicaciones ópticas, redes neuronales, LiDAR, computación, cuántica, entre otros. Las prestaciones clave en las que se pretende dar un salto disruptivo son el tamaño y capacidad para una alta densidad de integración, el consumo de potencia, y el ancho de banda. / [CA] La recerca de noves solucions i idees innovadores al camp de la fotònica de silici mitjançant la integració de nous materials amb prestacions úniques és un tema d'alta actualitat entre la comunitat científica en fotònica i amb un impacte potencial molt alt. D'aquesta temàtica, aquesta tesi pretén contribuir cap a una nova generació de dispositius fotònics basats en la integració d'òxids metàl·lics en tecnologia de silici. Els òxids metàl·lics elegits pertanyen a la família d'òxids conductors transparents (TCO), concretament l'òxid d'indi i estany (ITO) i l'òxid de cadmi (CdO), i materials de canvi de fase (PCM) com el diòxid de vanadi (VO2). Aquests materials es caracteritzen especialment per una variació dràstica de les propietats optoelectròniques, com ara la resistivitat o l'índex de refracció, davant d'un estímul extern ja siga en forma de temperatura, aplicació d'un camp elèctric o excitació òptica. D'aquesta manera, el nostre objectiu és dissenyar, fabricar i demostrar experimentalment noves solucions i dispositius clau com ara dispositius no volàtils, desfasadors i dispositius amb no-linealitat òptica. Aquests dispositius podrien trobar potencial utilitat en diverses aplicacions que comprenen les comunicacions òptiques, xarxes neuronals, LiDAR, computació, quàntica, entre d'altres. Les prestacions clau en què es pretén fer un salt disruptiu són la grandària i la capacitat per a una alta densitat d'integració, el consum de potència i l'amplada de banda. / [EN] The search for new solutions and innovative ideas in the field of silicon photonics through the integration of new materials featuring unique optoelectronic properties is a hot topic among the photonics scientific community with a very high potential impact. Within this topic, this thesis aims to contribute to a new generation of photonic devices based on the integration of metal oxides in silicon technology. The chosen metal oxides belong to the family of transparent conducting oxides (TCOs), namely indium tin oxide (ITO) and cadmium oxide (CdO), and phase change materials (PCMs) such as vanadium dioxide (VO2). These materials are characterized by a drastic variation of their optoelectronic properties, such as resistivity or refractive index, in response to an external stimulus either in the form of temperature, application of an electric field, or optical excitation. Therefore, our objective is to design, fabricate and experimentally demonstrate new solutions and key devices such as non-volatile devices, phase shifters, and devices with optical nonlinearity. Such devices could find potential utility in several applications, including optical communications, neural networks, LiDAR, computing, and quantum. The key features in which we aim to take a leapfrog are footprint and capacity for high integration density, power consumption, and bandwidth. / This work is supported in part by grants ACIF/2018/172 funded by Generaliltat Valenciana, and FPU17/04224 funded by MCIN/AEI/10.13039/501100011033 and by “ESF Investing in your future”. / Parra Gómez, J. (2022). Toward a new generation of photonic devices based on the integration of metal oxides in silicon technology [Tesis doctoral]. Universitat Politècnica de València. https://doi.org/10.4995/Thesis/10251/190883