<p>Flexible printed circuit boards (flex PCBs) are used in a wide range of electronic devices today due to their light weight, bendability, extensive wiring possibilities, and low-cost manufacturing techniques. The general trend in the flex PCB industry is further miniaturization alongside increasing functionality per device and reduced costs. To meet these demands, a new generation of low cost manufacturing technologies is being developed to enable structures with smaller lateral dimensions and higher packing densities.</p><p>Wet etching is today the most cost-efficient method for producing a large number of through-foil structures in flex PCBs. However, conventional wet etch techniques do not allow for through-foil structures with aspect ratios over 1 – a fact that either necessitates thin and mechanically weak foils or puts severe limitations on the packing density. The fabrication techniques presented in this thesis allow for through-foil structures with higher aspect ratios and packing densities using wet etching. To achieve high aspect ratios with wet etching, the flex PCB foils are pre-treated with irradiation by swift heavy ions. Each ion that passes through the foil leaves a track of damaged material which can be subsequently etched to form highly vertical pores. By using conventional flex PCB process techniques on the porous foils, high aspect ratio metallized through-foil structures are demonstrated.</p><p>The resulting structures consist of multiple sub-micrometer sized wires. These structures are superior to their conventional counterparts when it comes to their higher aspect ratios, higher possible packing densities and low metallic cross-section. Furthermore, metallized through-foil structures with larger areas and more complicated geometries are possible without losing the mechanical stability of the foil. This in turn enables applications that are not possible using conventional techniques and structures. In this thesis, two such applications are demonstrated: flex PCB vertical thermopile sensors and substrate integrated waveguides for use in millimeter wave applications.</p>

Flexible printed circuit boards (flex PCBs) are used in a wide range of electronic devices today due to their light weight, bendability, extensive wiring possibilities, and low-cost manufacturing techniques. The general trend in the flex PCB industry is further miniaturization alongside increasing functionality per device and reduced costs. To meet these demands, a new generation of low cost manufacturing technologies is being developed to enable structures with smaller lateral dimensions and higher packing densities. Wet etching is today the most cost-efficient method for producing a large number of through-foil structures in flex PCBs. However, conventional wet etch techniques do not allow for through-foil structures with aspect ratios over 1 – a fact that either necessitates thin and mechanically weak foils or puts severe limitations on the packing density. The fabrication techniques presented in this thesis allow for through-foil structures with higher aspect ratios and packing densities using wet etching. To achieve high aspect ratios with wet etching, the flex PCB foils are pre-treated with irradiation by swift heavy ions. Each ion that passes through the foil leaves a track of damaged material which can be subsequently etched to form highly vertical pores. By using conventional flex PCB process techniques on the porous foils, high aspect ratio metallized through-foil structures are demonstrated. The resulting structures consist of multiple sub-micrometer sized wires. These structures are superior to their conventional counterparts when it comes to their higher aspect ratios, higher possible packing densities and low metallic cross-section. Furthermore, metallized through-foil structures with larger areas and more complicated geometries are possible without losing the mechanical stability of the foil. This in turn enables applications that are not possible using conventional techniques and structures. In this thesis, two such applications are demonstrated: flex PCB vertical thermopile sensors and substrate integrated waveguides for use in millimeter wave applications. / wisenet

This dissertation presents the design and implementation of circuits and transceivers in CMOS technology to enable many new millimeter-wave applications. A simple approach is presented for accurately modeling the millimeter-wave characteristics of transistors that are not fully captured by contemporary parasitic extraction techniques. Next, the integration of a low-power 60-GHz CMOS on-off keying (OOK) receiver in 90-nm CMOS for use in multi-gigabit per second wireless communications is demonstrated. The use of non-coherent OOK demodulation by a novel demodulator enabled a data throughput of 3.5 Gbps and resulted in the lowest power budget (31pJ/bit) for integrated 60-GHz CMOS OOK receivers at the time of publication. Also presented is the design of a high-power, high-efficiency 45-GHz VCO in 45-nm SOI CMOS. The design is a class-E power amplifier placed in a positive feedback configuration. This circuit achieves the highest reported output power (8.2 dBm) and efficiency (15.64%) to date for monolithic silicon-based millimeter-wave VCOs. Results are provided for the standalone VCO as well as after packaging in a liquid crystal polymer (LCP) substrate. In addition, a high-power high-efficiency (5.2 dBm/6.1%) injection locked oscillator is presented. Finally, the design of a 2-channel 45-GHz vector modulator in 45-nm SOI CMOS for LINC transmitters is presented. A zero-power passive IQ generation network and a low-power Gilbert cell modulator are used to enable continuous 360° vector generation. The IC is packaged with a Wilkinson power combiner on LCP and driven by external DACs to demonstrate the first ever 16-QAM generated by outphasing modulation in CMOS in the Q-band.

Design techniques and procedures to improve performances of radio-frequency and millimeter-wave front-end integrated circuits were developed. Power amplifiers for high data-rate wireless communication applications were designed using CMOS technology employing a novel device resizing and concurrent power-combining technique to implement a multi-mode operation. Comprehensive analysis on the efficiency degradation effect of multi-input-single-output combining transformers with idle input terminals was performed. The proposed discrete resizing and power-combining technique effectively enhanced the efficiency of a linear CMOS power amplifier at back-off power levels. In addition, a novel power-combining transformer that is suitable to generate multi-watt-level output power was proposed and implemented. Employing the proposed power-combining transformer, a high-power linear CMOS power amplifier was designed. Furthermore, receiver building blocks such as a low-noise amplifier, a down-conversion mixer, and a passive balun were implemented using SiGe technology for W-band applications.

This dissertation presents a novel large signal modeling approach which can be used to accurately model CMOS transistors used in millimeter-wave CMOS power amplifiers. The large signal model presented in this work is classified as an empirical compact device model which incorporates temperature-dependency and device periphery scaling. These added features allow for efficient design of multi-stage CMOS power amplifiers by virtue of the process-scalability. Prior to the presentation of the details of the model development, background is given regarding the 90nm CMOS process, device test structures, de-embedding methods and device measurements, all of which are necessary preliminary steps for any device modeling methodology. Following discussion of model development, the design of multi-stage 60GHz Class AB CMOS power amplifiers using the developed model is shown, providing further model validation. The body of research concludes with an investigation into designing a CMOS power amplifier operating at frequencies close to the millimeter-wave range with a potentially higher-efficiency class of power amplifier operation. Specifically, a 24GHz 130nm CMOS Inverse Class F power amplifier is simulated using a modified version of the device model, fabricated and compared with simulations. This further demonstrates the robustness of this device modeling method.

As Si-manufacturing compatible SiGe HBTs are making rapid in-roads into RF through mm-wave circuit applications, with performance levels steadily marching upward, the use of these devices under extreme environment conditions are being studied extensively. In this work, test structures of SiGe HBTs were designed and put into extremely low temperatures, and a new negative differential resistance effect and a novel collector current kink effect are investigated in the cryogenically-operated SiGe HBTs. Theory based on an enhanced positive feedback mechanism associated with heterojunction barrier effect at deep cryogenic temperatures is proposed. The accumulated charge induced by the barrier effect acts at low temperatures to enhance the total collector current, indirectly producing both phenomena. This theory is confirmed using calibrated 2-D DESSIS simulations over temperature. These unique cryogenic effects also have significant impact on the ac performance of SiGe HBTs operating at high-injection. Technology evolution plays an important role in determining the magnitude of the observed phenomena, and the scaling implications are addressed. Circuit implication is discussed.

The object of this research was to investigate dispersion in surface phononic crystals (PnCs) for application to a newly developed passive surface acoustic wave (SAW) ozone sensor. Frequency band gaps and slow sound already have been reported for PnC lattice structures. Such engineered structures are often advertised to reduce loss, increase sensitivity, and reduce device size. However, these advances have not yet been realized in the context of surface acoustic wave sensors. In early work, we computed SAW dispersion in patterned surface structures and we confirmed that our finite element computations of SAW dispersion in thin films and in one dimensional surface PnC structures agree with experimental results obtained by laser probe techniques. We analyzed the computations to guide device design in terms of sensitivity and joint spectral operating point. Next we conducted simulations and experiments to determine sensitivity and limit of detection for more conventional dispersive SAW devices and PnC sensors. Finally, we conducted extensive ozone detection trials on passive reflection mode SAW devices, using distinct components of the time dispersed response to compensate for the effect of temperature. The experimental work revealed that the devices may be used for dosimetry applications over periods of several days.

The analysis and development of robust sensing platforms based on solidly-mounted ZnO bulk acoustic wave devices was proposed. The exploitation of acoustic energy trapping was investigated and demonstrated as a method to define active sensing areas on a substrate. In addition, a new "hybrid" acoustic mode experiencing acoustic energy trapping was studied theoretically and experimentally. This mode was used as an explanation of historical inconsistencies in observed thickness-shear mode velocities. Initial theoretical and experimental results suggest that this mode is a coupling of thickness-shear and longitudinal particle displacements and, as such, may offer more mechanical and/or structural information about a sample under test. Device development was taken another step further and multi-mode ZnO resonators operating in the thickness-shear, hybrid, and longitudinal modes were introduced. These devices were characterized with respect to sample viscosity and conductivity and preliminary results show that, with further development, the multi-mode resonators provide significantly more information about a sample than their single-mode counterparts. An alternative to resonator-based platforms was also presented in the form of bulk acoustic delay lines. Initial conceptual and simulation results show that these devices provide a different perspective of typical sensing modalities by using properly designed input pulses, device tuning, and examining overall input and output signal spectra.

The enabling technologies and the issues of next-generation millimeter-wave wireless access network and 100G long-haul optical transport network were developed and identified. To develop a simple and cost-effective millimeter-wave optical-wireless system, all-round research on the technical challenges of optical millimeter-wave generation, transmission impairments compensation, and simple base station design were discussed. Several radio-over-fiber systems were designed to simultaneously deliver multi-band wireless services on a single optical infrastructure, enabling converged system control and quality maintenance in central office. For the 100G optical transport network, the issues related to successful implementations of transmitter, fiber link, and receiver of a 112-Gb/s polarization-division multiplexing-quadrature phase shift keying (PDM-QPSK) system were comprehensively explored. The experimental results based on the constructed 112-Gb/s testbed indicated that careful dispersion management can effectively increase nonlinearity tolerance. Furthermore, the special emphasis on the two impairments of the 100G network with reconfigurable optical add-drop multiplexers: passband narrowing and in-band crosstalk, was studied. The results demonstrated that these impairments can be readily predicted with proper experimental and simulation efforts.

Advancing the field of nanotechnology to incorporate the unique properties observed at the nanoscale into functional devices has become a major scientific thrust of the 21st century. New fabrication tools and assembly techniques are required to design and manufacture devices based on one-dimensional nanostructures. Three techniques for manipulating nanomaterials post-synthesis have been developed. Two of them involve direct contact manipulation through the utilization of a physical probe. The third uses optically generated surface acoustic waves to reproducibly control and assemble one-dimensional nanostructures into desired locations. The nature of the third technique is non-contact and limits contamination and defects from being introduced into a device by manipulation. While the effective manipulation of individual nanostructures into device components is important for building functional nanosystems, commercialization is limited by this one-device-at-a-time process. A new approach to nanostructure synthesis was also developed to site-specifically nucleate and grow nanowires between two electrodes. Integrating synthesis directly with prefabricated device architectures leads to the possible mass production of NEMS, MEMS and CMOS systems based upon one-dimensional nanomaterials. The above processes have been pursued to utilize piezoelectric ZnO nanobelts for applications in high frequency electronic filtering as well as biological and chemical sensing. The high quality, single crystal, faceted nature of these materials make them ideal candidates for studying their properties through the designs of a bulk acoustic resonator. The first ever piezoelectric bulk acoustic resonator based on bottom-up synthesized belts will be demonstrated. Initial results are promising and new designs are implemented to scale the device to sub-micron dimensions. Multiple models will be developed to assist with design and testing. Some of models presented will help verify experimental results while others will demonstrate some of the problems plaguing further investigations.