Orientador: Jacobus W. Swart / Dissertação (mestrado) - Universidade Estadual de Campinas, Faculdade de Engenharia Eletrica e de Computação / Made available in DSpace on 2018-08-04T18:27:49Z (GMT). No. of bitstreams: 1 Alcantara_GlaucioPedrode_M.pdf: 1079087 bytes, checksum: afc69d32771f7a3060b934cb3fcabca4 (MD5) Previous issue date: 2005 / Resumo: Este trabalho de dissertação apresenta o estudo e projeto dos elementos que compõem um sensor de gases baseado na tecnologia de Onda Acústica de Superfície (SAW), tais como, o oscilador colpitts SAW e um ressonador SAW de uma porta, os quais estão na malha de realimentação de um amplificador. Foi realizado também a deposição de diferentes espessuras de filme fino de TiO2 sobre o sensor, a fim de se estudar o efeito da atenuação da SAW na fronteira entre o cristal e o filme. É mostrado que atenuação da SAW acontece no filme na fina camada de aproximadamente 500 angstroms de espessura. A dependência de espessura com a mudança de freqüência e com fator Q do oscilador SAW e ressonador são apresentados, bem como a ssensitividade de massa do ressonador SAW para o filme de TiO2. Um modelo de oscilador SAW usando 2 caminhos acústicos, de melhor sensitividade que aquele de modo simples, foi estudado e proposto / Abstract: This thesis presents the study and design of the elements which compose a gas sensor based on Surface Acoustic Wave technology, such as, SAW Colpitts oscillator and the SAW one-port resonator that are presents in the feedback loop of an amplifier. It was done deposition of TiO2 thin film different thickness on the sensor, in order to study the effect of SAW attenuation on the border between the crystal and the film. It is shown that SAW attenuation takes place in the film in thin layer of about 500 angstroms thickness. Thickness dependence of frequency shift and Q-factor of SAW oscillator and resonator, as well as, the mass sensitivity of SAW resonator to TiO2 film are presented. The model of SAW oscillator which uses two acoustic paths, has been studied and proposed. / Mestrado / Mestre em Engenharia Elétrica

This thesis discusses optoelectronic devices at mm-wave frequencies, focusing on optoelectronic beamforming and non-mechanical beam steering based on an optically excited Fresnel zone plate plasma. The optically controlled zone plate, termed the photo-injected Fresnel zone plate antenna (piFZPA) within this work, is introduced and a comprehensive theoretical framework developed. The design and optimisation of Fresnel zone plates are detailed, which determine the inherent performance of the piFZPA. A range of zone plates were designed, fabricated, and characterised at 94 GHz with up to 46 dBi gain, -26 dB sidelobe levels, and 67% aperture efficiency being measured for a quarter-wave design. The control of (sub) mm-wave beams by optical modulation of the complex permittivity of a semiconductor substrate is discussed. The significance of the free-carrier plasma dynamics, the effective lifetime, surface recombination, and the limits of the substrate which are imposed by the spatial resolution of the free-carrier plasma are highlighted, with the optimisation of these parameters discussed. The passivation quality of high-resistivity silicon wafers were characterised using a mm-wave photoconductance decay method, which yielded lifetime improvements from τ[subscript(eff)] = 60 us up to τ[subscript(eff)] ≈ 4,000 us, resulting in lowered recombination velocities (S = 15 cm/s). W-band characterisations of the passivated wafers illustrate the significance of surface recombination, with measured attenuations of up to 24 dB. Novel theoretical models are developed throughout this thesis, which yield insight into the requirements of optoelectronic devices, and are shown to agree well with measured data. The theoretical framework developed details the requirements, limitations, suitability, and design of piFZPAs at any frequency. A range of transmission-type piFZPAs are demonstrated and characterised at 94 GHz, both on-axis and off-axis, based on a novel architecture, with up to 8% aperture efficiency. Finally, the hybridisation of the piFZPA technique and well established visible display technologies, which has been developed throughout this thesis, enable low-cost, simple, and highly flexible optoelectronic devices, highlighting this method as an attractive solution to adaptive beamforming and non-mechanical steering at mm-wave and submm-wave frequencies.

Thesis (M.S.)--Joint Program in Oceanographic Engineering (Massachusetts Institute of Technology, Dept. of Ocean Engineering; and the Woods Hole Oceanographic Institution), 1997. / Includes bibliographical references (p. 65-66). / The Surface Suspended Acoustic Receiver (SSAR) is a free-drifting platform intended for use as a receiver in large scale acoustic tomography experiments. Early prototypes of the SSAR exhibited very poor signal-to-noise ratios in the frequency band of the hydrophones. This thesis details efforts to reduce the hydrophone noise level by combining the analysis of experimental data with the results from numerical models. Experiments were conducted to quantify both the frequency content and magnitude of noise generated on the SSAR. Through a program of sea trials and pond testing, two noise sources were identified. The dominant source of noise in the SSAR is velocity dependent flow noise that results from turbulent pressure fluctuations on the hydrophones. A second noise source results from the acceleration sensitivity of the hydrophones in conjunction with high frequency accelerations present in the hydrophone array cable. These high frequency accelerations also show a velocity dependence. The presence of the acceleration-induced noise leads to correlations between the signals from adjacent hydrophones, thus distorting the typical picture that flow noise should be uncorrelated along an array. The primary methods of eliminating the noise are encapsulating the hydrophone in a flow shield, eliminating the array cable, and slowing the system down by replacing the wave following surface buoy with a spar buoy. Using the experimental results, empirical relationships between hydrophone velocity and expected noise level are formed for both shielded and unshielded hydrophones. The numerical models developed as a part of this effort are then used to predict the velocities for a wide range of possible SSAR configurations. The models can also provide information, such as system tensions, that is useful in evaluating the longevity and survivability of SSARs. Modeled design fixes include subsurface component changes as well as comparing a wave following surface buoy to a spar buoy. / by Jason I. Gobat. / M.S.

<p>The ferrimagnetic electrical insulator yttrium iron garnet (YIG) has been proved a promising magnonic platform that allows for a variety of application within microwave fre- quency range. This dissertation focuses on the development of novel spin wave resonators and filters for next-generation radio frequency technology.</p> <p>Chapter 1 begins with an introduction to modern radio frequency communication tech- nology and motivation of our research on novel radio frequency devices.</p> <p>Chapter 2 discusses about the properties of yttrium iron garnet (YIG) thin film platform and theory of magnetostatic waves (MSW) within the magnetic thin film system. Three different types of magnetostatic wave modes, known as magnetostatic forward volume wave (MSFVW), magnetostatic backward volume waves (MSBVW) and magnetostatic surface wave (MSSW), are illustrated in this section. They have very distinct dispersion relations and require different transduction technology, which leads to disparate designs for devices utilizing different modes. The damping mechanism and linewidth of the magnetostatic modes will also be discussed in this chapter.</p> <p>Chapter 3 will showcase a new YIG-on-Si platform created using novel YIG bonding technology and the first ever on-chip MSFVW hairpin resonator on the YIG-on-Si platform. In the first part, we would like to show finite element analysis of YIG-on-Si MSFVW hairpin resonator and prove the capability of the hairpin transducer incorporated with YIG thin film to yield lower self-inductance and stronger excitation field. These unique properties are beneficial for generating high coupling between magnon and microwave domains. In the following sections, the bonding technology essential for creation of YIG-on-Si platform and key fabrication technology of hairpin devices are explained in detailed. With well defined fabrication process established, we will demonstrate that the hairpin magnetostatic wave resonator obtained through the process is magnetically tunable with a high coupling efficiency over 50%. An out-of-plane Z-directional tunable magnetic field results in forward volume spin-wave resonance with frequency in the 5G band. This technology enables us to build on-chip devices of desirable high coupling and magnetic tuning on the new YIG-on-Insulator platform and provides possibility of magnetic tuning and band-pass filter at radio-frequency range.</p> <p>Chapter 4 demonstrates a planar monolithic yttrium iron garnet (YIG) Chebyshev bandstop filter on traditional gadolinium gallium garnet (GGG) substrate with tunable frequency, low insertion loss and high rejection. This filter is created in YIG micro-machining technol- ogy that allows direct placement of metal transducers on YIG for strong spin-wave coupling. With an out-of-plane 3900 Oe bias field, the bandstop filter exhibits 55 dB maximum stop- band rejection at a center frequency of 6 GHz, with 2 dB passband insertion loss and 37.8 dBm passband <strong>IIP3</strong>. By applying different bias fields, the stopband center frequency is tuned from 4 GHz to 8 GHz while maintaining more than 30 dB rejection. Incorporated with proper design of tunable compact electromagnet, this new filter design can provide attenuation of spurs appearing across the 5G and X-band spectrum.</p> <p>In chapter 5, we will explore the properties of YIG thin-film materials in depth. Both YIG-on-Si and YIG-on-GGG platform under different conditions will be examined. Results of X-ray diffraction (XRD), ferromagnetic resonance (FMR), scanning tunneling microscope (STM) on the YIG thin films will be presented. Those results will cast light onto the study of limiting factors of our YIG-on-Si and YIG-on-GGG devices.</p>

Surface acoustic wave (SAW) sensors offer a wireless, passive sensor solution for use in numerous environments where wired sensing can be expensive and infeasible. Single carrier frequency SAW sensor embodiments such as delay lines, and resonators have been used in single sensor environments where sensor identification is not a necessity. The orthogonal frequency coded (OFC) SAW sensor tag embodiment developed at UCF uses a spread spectrum approach that allows interrogation in a multi-sensor environment and provides simultaneous sensing and sensor identi- fication. The SAW device is encoded via proper design of multiple Bragg reflectors at differing frequencies. To enable accurate device design, a model to predict reflectivity over a wide range of electrode metallization ratios and metal thicknesses has been developed and implemented in a coupling of modes (COM) model. The high coupling coefficient, reflectivity and temperature coefficient of delay (TCD) of YZ LiNbO3 makes it an ideal substrate material for a temperature sensor, and the reflectivity model has been developed and verified for this substrate. A new concept of pseudo-orthogonal frequency coded (POFC) SAW sensor tags has been investigated, and with proper design, the POFC SAW reduces device insertion loss and fractional bandwidth compared to OFC. OFC and POFC sensor devices have been fabricated at 250 MHz and 915 MHz using fundamental operation, and 500 MHz and 1.6 GHz using second harmonic operation. Measured device results are shown and compared with the COM simulations using the iii enhanced reflectivity model. Additionally, the first OFC devices at 1.05 GHz were fabricated on 128o YX LiNbO3 to explore feasibility of the material for future use in OFC sensor applications. Devices at 915 MHz have been fabricated on YZ LiNbO3 and integrated with an antenna, and have then been used in a transceiver system built by Mnemonics, Inc. to wirelessly sense temperature. The first experimental wireless POFC SAW sensor device results and predictions will be presented.

No description available.

This thesis discusses the investigation and utilization of a new promising thin-film material, liquid crystal polymer (LCP), for microwave and millimeter-wave (mm-wave [>30 GHz]) components and packages. The contribution of this research is in the determination of LCP's electrical and mechanical properties as they pertain to use in radio frequency (RF) systems up to mm-wave frequencies, and in evaluating LCP as a low-cost substrate and packaging material alternative to the hermetic materials traditionally desired for microwave circuits at frequencies above a few gigahertz (GHz). A study of LCP's mm-wave material properties was performed. Resonant circuit structures were designed to find the dielectric constant and loss tangent from 2-110 GHz under both ambient and elevated temperature conditions. Several unique processes were developed for the realization of novel multilayer LCP-based RF circuits. These processes include thermocompression bonding with tight temperature control (within a few degrees Celsius), precise multilayer alignment and patterning, and LCP laser processing with three different types of lasers. A proof-of-concept design that resulted from this research was a dual-frequency dual-polarization antenna array operating at 14 and 35 GHz. Device characterization such as mechanical flexibility testing of antennas and seal testing of packages were also performed. A low-loss interconnect was developed for laser-machined system-level thin-film LCP packages. These packages were designed for and measured with both RF micro-electromechanical (MEM) switches and monolithic microwave integrated circuits (MMICs). These research findings have shown LCP to be a material with uniquely attractive properties/capabilities for vertically integrated, compact multilayer LCP circuits and modules.

Three 40/60-GHz optical-wireless bidirectional architectures are designed with a centralized light source in the central office based on wavelength reuse. Three super-broadband access networks are proposed and experimentally demonstrated for simultaneously delivering wired and wireless services over an optical fiber and an air link in a single transport platform. The transport feasibility in metro and wide-area access networks with multiple reconfigurable optical add-drop multiplexers (ROADMs) nodes is explored for 40-GHz and 60-GHz optical millimeter-wave signals. Additionally, the optical-wireless systems using the orthogonal frequency division multiplexing (OFDM) modulation format are analytically and experimentally demonstrated to mitigate the chromatic dispersion in optical fiber. This thesis also successfully implements the testbed trial for the delivery of uncompressed 270-Mb/s standard-definition television (SDTV) and 1.485-Gb/s high-definition television (HDTV) video signals over optical fiber and air links. The demonstration represents the first ever reported real applications over hybrid wired and wireless access networks, showing that our developed up-conversion schemes and designed architectures are highly suitable for super-broadband applications in next-generation optical-wireless access networks.

Through the history of mankind, novel materials have played a key role in techno- logical progress. As we approach the limits of scaling it becomes difficult to squeeze out any more extensions to Moore’s law by just reducing device feature sizes. It is important to look for an alternate semiconductor to silicon in order to continue making the progress predicted by Moore’s law. Among the various semiconductor options being explored world-wide, the III-nitride semiconductor material system has certain unique characteristics that make it one of the leading contenders. We explore the III-nitride semiconductor material system for the unique advantages that it offers over the other alternatives available to us. This thesis studies the device applications of epitaxial III-nitride films and nanos- tructures grown using plasma assisted molecular beam epitaxy (PAMBE) The material characterisation of the PAMBE grown epitaxial III-nitrides was car- ried out using techniques like high resolution X-ray diffraction (HR-XRD), field emis- sion scanning electron microscopy (FESEM), room temperature photoluminescence (PL) and transmission electron microscopy (TEM). The epitaxial III-nitrides were then further processed to fabricate devices like Schottky diodes, photodetectors and surface acoustic wave (SAW) devices. The electrical charcterisation of the fabricated devices was carried out using techniques like Hall measurement, IV and CV measure- ments on a DC probe station and S-parameter measurements on a vector network analyser connected to an RF probe station. We begin our work on Schottky diodes by explaining the motivation for adding an interfacial layer in a metal-semiconductor Schottky contact and how high-k di- electrics like HfO2 have been relatively unexplored in this application. We report the work carried out on the Pt/n-GaN metal-semiconductor (MS) Schottky and the Pt/HfO2/n-GaN metal-insulator-semiconductor (MIS) Schottky diode. We report an improvement in the diode parameters like barrier height (0.52 eV to 0.63 eV), ideality factor (2.1 to 1.3) and rectification ratio (35.9 to 98.9 @2V bias) after the introduction of 5 nm of HfO2 as the interfacial layer. Temperature dependent I-V measurements were done to gain a further understanding of the interface. We observe that the barrier height and ideality factor exhibit a temperature dependence. This was attributed to inhomogeneities at the interface and by assuming a Gaussian distribution of barrier heights. UV and IR photodetectors using III-nitrides are then studied. Our work on UV photodetectors describes the growth of epitaxial GaN films. Au nanoparticles were fabricated on these films using thermal evaporation and annealing. Al nanostruc- tures were fabricated using nanosphere lithography. Plasmonic enhancement using these metallic nanostructures was explored by fabricating metal-semiconductor-metal (MSM) photodetectors. We observed plasmonic enhancement of photocurrent in both cases. To obtain greater improvement, we etched down on the GaN film using reac tive ion etching (RIE). This resulted in further increase in photocurrent along with a reduction in dark current which was attributed to creation of new trap states. IR photodetectors studied in this thesis are InN quantum dots whose density can be controlled by varying the indium flux during growth. We observe that increase in InN quantum dot density results in increase in photocurrent and decrease in dark current in the fabricated IR photodetectors. We then explore the advantages that InGaN offers as a material that supports surface acoustic waves and fabricate InGaN based surface acoustic wave devices. We describe the growth of epitaxial In0.23 Ga0.77 N films on GaN template using molecular beam epitaxy. Material characterisation was carried out using HR-XRD, FESEM, PL and TEM. The composition was determined from HR-XRD and PL measurements and both results matched each other. This was followed by the fabrication of interdigited electrodes with finger spacing of 10 µm. S-parameter results showed a transmission peak at 104 MHz with an insertion loss of 19 dB. To the best of our knowledge, this is the first demonstration of an InGaN based SAW device. In summary, this thesis demonstrates the practical advantages of epitaxially grown film and nanostructured III-nitride materials such as GaN, InN and InGaN using plasma assisted molecular beam epitaxy for Schottky diodes, UV and IR photodetec- tors and surface acoustic wave devices.

"2009" / Thesis (MSc (Hons))--Macquarie University, Faculty of Science, Dept. of Physics and Engineering, 2010. / Bibliography: p. 163-166. / Introduction -- Design theory and process technology -- 15GHz oscillator implementations -- 24GHz oscillator implementation -- Frequency prescaler implementation -- MMIC fabrication and measurement -- Conclusion. / Advances in Silicon Germanium (SiGe) Bipolar Complementary Metal Oxide Semiconductor (BiCMOS) technology has caused a recent revolution in low-cost Monolithic Microwave Integrated Circuit (MMIC) design. -- This thesis presents the design, fabrication and measurement of four MMICs for frequency synthesis, manufactured in a commercially available IBM 0.18μm SiGe BiCMOS technology with ft = 60GHz. The high speed and low-cost features of SiGe Heterojunction Bipolar Transistors (HBTs) were exploited to successfully develop two single-ended injection-lockable 15GHz Voltage Controlled Oscillators (VCOs) for application in an active Ka-Band antenna beam-forming network, and a 24GHz differential cross-coupled VCO and 1/6 synchronous static frequency prescaler for emerging Ultra Wideband (UWB) automotive Short Range Radar (SRR) applications. -- On-wafer measurement techniques were used to precisely characterise the performance of each circuit and compare against expected simulation results and state-of-the-art performance reported in the literature. -- The original contributions of this thesis include the application of negative resistance theory to single-ended and differential SiGe VCO design at 15-24GHz, consideration of manufacturing process variation on 24GHz VCO and prescaler performance, implementation of a fully static multi-stage synchronous divider topology at 24GHz and the use of differential on-wafer measurement techniques. -- Finally, this thesis has llustrated the excellent practicability of SiGe BiCMOS technology in the engineering of high performance, low-cost MMICs for frequency synthesis in millimeterwave (mm-wave) devices. / Mode of access: World Wide Web. / xxii, 166 p. : ill (some col.)