The demand for wide bandgap semiconductors for radiation detector applications has significantly increased in recent years due to an ever-growing need for safeguard measures and medical imaging systems amongst other applications. The need for these devices to be portable and efficient, and to operate at room temperature is important for practical applications. For radiation detectors, the semiconductor materials are mainly required to have an optimal energy gap, high average atomic number, good electrical resistivity and charge transport properties as well as purity and homogeneity. Cadmium zinc telluride (CZT) distinctly stands out among the other choices of semiconductor materials for radiation detector applications, due to its attractive material properties and the room temperature operation possibility. A tremendous amount of research is being conducted to improve CZT technology and its implementation into more commercial systems. Applications of CZT detector technology in national security, high energy physics, nuclear spectroscopy, and medical imaging systems are of special interests. However, CZT devices still face challenges that need to be understood and overcome in order to have more efficient radiation detector systems. One such challenge lies in the understanding of the surfaces of CZT detectors and surface recombination effects on charge transport, charge collection efficiency, and detector performance. Another common issue is the degradation of CZT detectors due to the presence of defects which can act as traps for the charge carriers and cause incomplete charge collection from the detectors. Thus, a major challenge is that, the commercial CZT crystals have large concentrations of defects and impurities that need to be characterized, and their effects on the detector performance should be studied. Photoluminescence (PL) spectroscopy is a sensitive, non-contact and non-destructive method, suitable to characterize lower concentrations of point defects, such as substitutional impurities (donors, acceptors) and native defects in CZT crystals. A PL spectrum provides information regarding the defect nature of the crystal by determining the presence and the type of vacancies, interstitials, and impurities in the lattice. The main objective of this thesis is to address the presence of the defects in CZT crystals, identify their types, and study their roles in the performance of x-ray radiation detectors using PL spectroscopy. Additionally, using PL method and different excitation sources including UV excitation, this thesis studies the surface of CZT samples and investigates the PL signature of the surface oxide of the samples, in an effort to optimize the surface processing and thereby improve CZT detector performance. / Graduate

Ce manuscrit porte sur la conception d’un transistor à effet de champ destiné à l’observation de la photoluminescence de l’exciton et des complexes excitoniques chargés du ZnO sous l’influence d’un champ électrique. Pour cela, des simulations ont permis de définir un cahier des charges de la structure du transistor afin de bloquer la conductivité dans le canal de ZnO et d’appliquer un champ électrique intense. La seconde partie concerne le choix du matériau de grille et de l’électrode transparente de surface pour l’observation de la photoluminescence dans le canal. L’oxyde de gallium (-Ga2O3) a été choisi car il présente un grand gap, des propriétés d’isolant et de semi-conducteur avec dopage. Cependant les films de Ga2O3 dopés avec Ti, Sn, Zn et Mg élaborés par MOCVD n’ont pas révélé de conductivité. Les films d’alliages (Ga,Sn)2O3 n’ont pas non plus montré de conductivité et leur structure est étudiée intensivement. Des traitements plasma radiofréquence sous flux d’argon, d’oxygène ou d’hydrogène ont permis de montrer que l’implantation de l’hydrogène donne lieu à un niveau donneur avec une énergie d’activation de 7 meV. La conductivité est toutefois modulée par le dopage en Sn et les traitements s’accompagnent d’un changement de la sous-stœchiométrie en oxygène qui diminue la transparence à cause de la formation de niveau profond de lacune d’oxygène. La structure finale de la grille transparente dans l’ultraviolet pour l’observation de la photoluminescence du ZnO peut donc être élaborée par une grille diélectrique de -Ga2O3 puis une électrode conductrice transparente de (Ga,Sn)2O3 traitée superficiellement par un plasma d’hydrogène. / This manuscript covers the design of a field transistor for the observation of photoluminescence of the exciton and the charged excitonic complex of ZnO under the influence of an electric field. For this, simulations have helped to define the specifications of the transistor structure to block the conductivity in the ZnO channel and applying a strong electric field. The second part concerns the choice of gate material and the surface transparent electrode for the observation of photoluminescence in the channel. The gallium oxide (-Ga2O3) was chosen because it has a large gap, insulating properties and semiconductor properties with doping. However, Ga2O3 films doped with Ti, Sn, Zn and Mg MOCVD did not show conductivity. Films of alloys (Ga,Sn)2O3 have not shown either conductivity and their structure is studied intensively. Radio frequency plasma treatment under a flux of argon, oxygen or hydrogen have shown that implantation of hydrogen gives rise to a donor level with 7 meV activation energy. However, the conductivity is modulated by doping Sn and treatments are accompanied by a change of sub-stoichiometry in oxygen, which reduces the transparency due to the formation of deep level of oxygen vacancy. The final structure of the transparent gate in the ultraviolet for the observation of photoluminescence of ZnO can be prepared by a dielectric gate -Ga2O3 and a transparent conductive electrode of (Ga,Sn)2O3 surface treated by a plasma of hydrogen.

[pt] O acesso sem fio de banda larga está se tornando uma realidade, não apenas para uso corporativo e doméstico, mas para usuários com mobilidade. Dos estimados 1.8 bilhão de pessoas que já utilizam banda larga desde 2012, cerca de dois terços serão consumidores de banda larga móvel e a maioria será servida por redes HSPA (High Speed Packet Access) e LTE-A (Long Term Evolution-Advanced), uma evolução para as redes 4G,capaz de oferecer velocidades acima de 500 Mbps. O planejamento celular tem como objetivo estabelecer a rede de rádio adequada e eficiente em termos de cobertura, capacidade, qualidade de serviço (QoS), custo, utilização de frequências, a implantação de equipamentos e desempenho. O objetivo deste trabalho é estudar dos métodos de planejamento de cobertura e capacidade de sistemas celulares LTE-Advanced e propor uma metodologia passo-a-passo para o planejamento inicial e dimensionamento do número de estações rádio base necessárias para atender uma determinada área de serviço com a capacidade requerida. Um estudo de caso é apresentado, ilustrando a aplicação da metodologia proposta. É apresentada também uma análise comparativa dos recursos requeridos para atender às especificações do projeto quando são utilizadas as bandas de frequência de 2.6 GHz, atualmente autorizada no Brasil, e a banda de 700 MHz, que está em consideração para uso futuro. Os resultados quantificam claramente as vantagens do uso da banda de 700 MHz em relação à banda de 2.6 GHz. / [en] The wireless broadband is becoming a reality, not only for corporate and domestic use, but for mobile users. Of the estimated 1.8 billion people already using broadband since 2012, about two thirds will be mobile broadband consumers and the majority will be served by HSPA (High Speed Packet Access) and LTE-A (Long Term Evolution-Advanced), an evolution to 4G networks, able to offer speeds up to 500 Mbps. The cell planning establishes a radio network properly and efficiently in terms of coverage, capacity, quality of service (QoS), cost, frequency usage, deployment of equipment and performance. The objective of this work is to study the methods of planning coverage and capacity of LTE-A cellular systems and propose a methodology step-by-step for the initial planning and dimensioning of the number of base stations required to meet a given service area with the required capacity. A study case is presented, illustrating the application of the proposed methodology. It also presented a comparative analysis of the required resources to meet the project specifications when used frequency bands of 2.6 GHz, nowadays licensed in Brazil, and the 700 MHz band, which is under consideration for future use. The results clearly quantify the advantages of the use of the 700 MHz band relative to the 2.6 GHz band.

Ce manuscrit présente la conception d'un sondeur de canal de propagation en intérieur de bâtiment en contexte Ultra Large Bande ULB. Le sondeur est basé sur une architecture parallèle en réception composée de circuits cinq ports et d'un réseau d'antennes imprimées LTSA (Linear Tapered Slot Antenna). Le sondeur a été réalisé et testé dans la bande de fréquence ULB (6 to 8.5 GHz) alloué par l'ETSI . Les mesures réalisées ont permis d'étudier les directions d'arrivée (DOA) ainsi que le temps d'arrivée des ondes correspondantes aux multi trajets à l'intérieur d'un bâtiment. L'association de la technique cinq-port et de la méthode d'estimation MUSIC (Multiple Signal Classification) permet d'avoir un sondeur à faible coût de réalisation et à haute précision d'estimation. Plusieurs scénarios de propagation sont traités dans le manuscrit que se soit en condition de visibilité (LOS) ou de non visibilité (NLOS)

Issues of major relevance to the n-type conductivity of Al0.77Ga0.23N associated with Si and O incorporation, their shallow donor or deep donor level behavior, and carrier compensation are elucidated by allying (i) study of Si and O incorporation kinetics at high process temperature and low growth rate, and (ii) electron paramagnetic resonance measurements. The Al0.77Ga0.23N composition correlates to that Al content for which a drastic reduction of the conductivity of AlxGa1−xN is commonly reported. We note the incorporation of carbon, the role of which for the transport properties of AlxGa1−xN has not been widely discussed.

L'aéroacoustique est une filière de l'acoustique qui étudie la génération de bruit par un mouvement fluidique turbulent ou par les forces aérodynamiques qui interagissent avec les surfaces. Ce secteur en pleine croissance a attiré des intérêts récents en raison de l'évolution de la transportation aérienne, terrestre et spatiale. Alors que les tests sur un objet réel sont possibles, leur implantation est généralement compliquée et les résultats sont facilement corrompus par le bruit ambiant. Par conséquent, les tests plus strictement contrôlés au laboratoire utilisant les modèles de dimensions réduites sont préférables. Toutefois, lorsque les dimensions sont réduites par un facteur de M, l'amplitude et la bande passante des ondes acoustiques correspondantes se multiplient respectivement par 10logM en décibels et par M. Les microphones avec une bande passante de plusieurs centaines de kHz et une plage dynamique couvrant de 40Pa à 4 kPa sont ainsi nécessaires pour les mesures aéroacoustiques. Les microphones MEMS ont été étudiés depuis plus de vingt ans, et plus récemment, l'industrie des semiconducteurs se concentre de plus en plus sur ce domaine. Par rapport à tous les autres principes de fonctionnement, grâce à la miniaturisation, les microphones de type piézorésistif peuvent atteindre une bande passante plus élevée et ils sont ainsi bien adaptés pour les mesures aéroacoustiques. Dans cette thèse, deux microphones MEMS de type piézorésistif à base de silicium polycristallin (poly-Si) latéralement cristallisé par l'induction métallique (MILC) sont conçus et fabriqués en utilisant respectivement les techniques de microfabrication de surface et de volume. Ces microphones sont calibrés à l'aide d'une source d'onde de choc (N-wave) générée par une étincelle électrique. Pour l'échantillon fabriqué par le micro-usinage de surface, la sensibilité statique mesurée est de 0.4 μV/V/Pa, la sensibilité dynamique est de 0.033 μV/V/Pa et la plage fréquentielle commence à 100 kHz avec une fréquence du premier mode de résonance à 400 kHz. Pour l'échantillon fabriqué par le micro-usinage de volume, la sensibilité statique mesurée est de 0.28 μV/V/Pa, la sensibilité dynamique est de 0.33 μV/V/Pa et la plage fréquentielle commence à 6 kHz avec une fréquence du premier mode de résonance à 715 kHz.

In recent years, many researchers have investigated automated progress tracking for construction projects. These efforts range from 2D photo-feature extraction to 3D laser scanners and radio frequency identification (RFID) tags. A multi-sensor data fusion model that utilizes multiple sources of information would provide a better alternative than a single-source model for tracking project progress. However, many existing fusion models are based on data fusion at the sensor and object levels and are therefore incapable of capturing critical information regarding a number of activities and processes on a construction site, particularly those related to non-structural trades such as welding, inspection, and installation activities. In this research, a workflow based data fusion framework is developed for construction progress, quality and productivity assessment. The developed model is based on tracking construction activities as well as objects, in contrast to the existing sensor-based models that are focussed on tracking objects. Data sources include high frequency automated technologies including 3D imaging and ultra-wide band (UWB) positioning. Foreman reports, schedule information, and other data sources are included as well. Data fusion and management process workflow implementation via a distributed computing network and archiving using a cloud-based architecture are both illustrated. Validation was achieved using a detailed laboratory experimental program as well as an extensive field implementation project. The field implementation was conducted using five months of data acquired on the University of Waterloo Engineering VI construction project, yielding promising results. The data fusion processes of this research provide more accurate and more reliable progress and earned value estimates for construction project activities, while the developed data management processes enable the secure sharing and management of construction research data with the construction industry stakeholders as well as with researchers from other institutions.

L'aéroacoustique est une filière de l'acoustique qui étudie la génération de bruit par un mouvement fluidique turbulent ou par les forces aérodynamiques qui interagissent avec les surfaces. Ce secteur en pleine croissance a attiré des intérêts récents en raison de l'évolution de la transportation aérienne, terrestre et spatiale. Les microphones avec une bande passante de plusieurs centaines de kHz et une plage dynamique couvrant de 40Pa à 4 kPa sont nécessaires pour les mesures aéroacoustiques. Dans cette thèse, deux microphones MEMS de type piézorésistif à base de silicium polycristallin (poly-Si) latéralement cristallisé par l'induction métallique (MILC) sont conçus et fabriqués en utilisant respectivement les techniques de microfabrication de surface et de volume. Ces microphones sont calibrés à l'aide d'une source d'onde de choc (N-wave) générée par une étincelle électrique. Pour l'échantillon fabriqué par le micro-usinage de surface, la sensibilité statique mesurée est 0.4μV/V/Pa, la sensibilité dynamique est 0.033μV/V/Pa et la plage fréquentielle couvre à partir de 100 kHz avec une fréquence du premier mode de résonance à 400kHz. Pour l'échantillon fabriqué par le micro-usinage de volume, la sensibilité statique mesurée est 0.28μV/V/Pa, la sensibilité dynamique est 0.33μV/V/Pa et la plage fréquentielle couvre à partir de 6 kHz avec une fréquence du premier mode de résonance à 715kHz.

In recent years, many researchers have investigated automated progress tracking for construction projects. These efforts range from 2D photo-feature extraction to 3D laser scanners and radio frequency identification (RFID) tags. A multi-sensor data fusion model that utilizes multiple sources of information would provide a better alternative than a single-source model for tracking project progress. However, many existing fusion models are based on data fusion at the sensor and object levels and are therefore incapable of capturing critical information regarding a number of activities and processes on a construction site, particularly those related to non-structural trades such as welding, inspection, and installation activities. In this research, a workflow based data fusion framework is developed for construction progress, quality and productivity assessment. The developed model is based on tracking construction activities as well as objects, in contrast to the existing sensor-based models that are focussed on tracking objects. Data sources include high frequency automated technologies including 3D imaging and ultra-wide band (UWB) positioning. Foreman reports, schedule information, and other data sources are included as well. Data fusion and management process workflow implementation via a distributed computing network and archiving using a cloud-based architecture are both illustrated. Validation was achieved using a detailed laboratory experimental program as well as an extensive field implementation project. The field implementation was conducted using five months of data acquired on the University of Waterloo Engineering VI construction project, yielding promising results. The data fusion processes of this research provide more accurate and more reliable progress and earned value estimates for construction project activities, while the developed data management processes enable the secure sharing and management of construction research data with the construction industry stakeholders as well as with researchers from other institutions.

Main objective of the present work is to develop wide-band gap InGaN solar cells in the 2.4 - 2.9 eV range that can be an integral component of photovoltaic devices to achieve efficiencies greater than 50%. In the present work, various challenges in the novel III-nitride technology are identified and overcome individually to build basic design blocks, and later, optimized comprehensively to develop high-performance InGaN solar cells. Due to the unavailability of a suitable modeling program for InGaN solar cells, PC1D is modified up to a source-code level to incorporate spontaneous and piezoelectric polarization in order to accurately model III-nitride solar cells. On the technological front, InGaN with indium compositions up to 30% (2.5 eV band gap) are developed for photovoltaic applications by controlling defects and phase separation using metal-organic chemical vapor deposition. InGaN with band gap of 2.5 eV is also successfully doped to achieve acceptor carrier concentration of 1e18 cm-3. A robust fabrication scheme for III-nitride solar cells is established to increase reliability and yield; various schemes including interdigitated grid contact and current spreading contacts are developed to yield low-resistance Ohmic contacts for InGaN solar cells. Preliminary solar cells are developed using a standard design to optimize the InGaN material, where the band gap of InGaN is progressively lowered. Subsequent generations of solar cell designs involve an evolutionary approach to enhance the open-circuit voltage and internal quantum efficiency of the solar cell. The suitability of p-type InGaN with band gaps as low as 2.5 eV is established by incorporating in a solar cell and measuring an open-circuit voltage of 2.1 V. Second generation InGaN solar cell design involving a 2.9 eV InGaN p-n junction sandwiched between p- and n-GaN layers yields internal quantum efficiencies as high as 50%; while sixth generation devices utilizing the novel n-GaN strained window-layer enhance the open circuit voltage of a 2.9 eV InGaN solar cell to 2 V. Finally, key aspects to further InGaN solar cell research, including integration of various designs, are recommended to improve the efficiency of InGaN solar cells. These results establish the potential of III-nitrides in ultra-high efficiency photovoltaics.