Orientador: Fernando Aparecido Sigoli / Dissertação (mestrado) - Universidade Estadual de Campinas, Instituto de Química / Made available in DSpace on 2018-08-22T05:08:39Z (GMT). No. of bitstreams: 1 Bosshard_GabrielaZanotto_M.pdf: 4132378 bytes, checksum: abfa0f7115fb10b1aa31e7b1e9367ef8 (MD5) Previous issue date: 2012 / Resumo: O objetivo deste projeto foi investigar a síntese de óxido de zinco contendo enxofre obtido a partir de sulfeto de zinco nas fases wurtzita (hexagonal) e blenda de zinco (cúbica), assim como fazer a caracterização e estudar as alterações estruturais e ópticas dos materiais sintetizados e compará-las às propriedades do óxido de zinco sintetizado a partir de hidroxicarbonato de zinco. O método de síntese utilizado permite a obtenção de sulfeto de zinco hexagonal ou cúbico a baixa temperatura, permitindo um estudo comparativo da influência da estrutura cristalina do sulfeto de zinco na formação do óxido de zinco. Os estudos por difração de raios X mostram que há leve variação nos parâmetros de rede do material obtido, principalmente quando a síntese parte da fase hexagonal do ZnS. Somado a isso, a análise da luminescência dos materiais obtidos mostra emissão em torno de 520 nm, que pode ser atribuída a transição eletrônica entre defeitos de Frenkel (Zni e VZn") que foram formados a temperaturas inferiores à requerida para a formação deste tipo de defeito, indicando, portanto alterações na rede do óxido de zinco contendo enxofre. / Abstract: This project aimed to investigate the synthesis of sulfur-containing zinc oxide obtained from zinc sulfide in the wurtzite (hexagonal) or zinc blende (cubic) phases, in order to study possible changes in the structural and optical properties of the obtained, material which were compared to the properties of zinc oxide synthesized from zinc hydroxicarbonate. The used method of synthesis allowed obtaining zinc sulfide hexagonal or cubic at low temperature and therefore comparative studies of the influence of crystalline structure of zinc sulfide in the formation of zinc oxide was possible. X-ray diffraction data show that there is a slight variation in the lattice parameters of the obtained material, especially in the material synthesized from hexagonal ZnS. In addition to that, luminescence emission around 520 nm, assigned to the electronic transition among Frenkel defects (Zni and VZn"), indicate changes in the network of the sulfur-containing zinc oxide, since this type of defect is expected to be formed at temperatures above the ones used in the present work. / Mestrado / Quimica Inorganica / Mestra em Química

White light emitting diodes (LED) have drawn increasing attention due to their low energy consumption, high efficiency and potential to become primary lighting source by replacing conventional light sources. White light emission is usually generated either by coating yellow phosphor on a blue-LED or blending red, green and blue phosphor in an appropriate ratio. Maintaining appropriate proportions of individual components in the blend is difficult and the major demerit of such system is the overall self-absorption, which changes the solution concentration. This results in uncontrolled changes in the whiteness of the emitted light. Zinc Oxide (ZnO), a wide bandgap semiconductor with a large exciton binding energy at room temperature has been recognized as a promising material for ultraviolet LEDs and laser diodes. Tuning of structural, optical and electrical properties of ZnO thin films by different dopants (Lithium, Indium and Gallium) is dealt in this thesis. The achievement of white light emission from a semiconducting material without using phosphors offers an inexpensive fabrication technology, good luminescence, low turn-on voltage and high efficiency. The present work is organized chapter wise, which has 8 chapters including the summary and future work. Chapter 1: Gives a brief discussion on the overview of ZnO as an optoelectronic material, crystal structure of semiconductor ZnO, the effect of doping, optical properties and its possible applications in optoelectronic devices. Chapter 2: Deals with various deposition techniques used in the present study, includes pulsed laser deposition and thermal evaporation. The experimental set up details and the deposition procedures are described in detail. A brief note on the structural characterization equipments, namely X-ray diffraction (XRD), scanning electron microscopy (SEM), atomic force microscopy (AFM), X-ray photoelectron spectroscopy (XPS) and the optical characterization techniques namely Raman spectroscopy, transmission spectroscopy and photoluminescence (PL) spectroscopy is presented. The electrical properties of the films were studied by current- voltage, capacitance - voltage and Hall Effect measurements and the experimental details are discussed. Chapter 3: High quality ZnO/Si heterojunctions fabricated by growing ZnO thin films on p-type Si (100) substrate by pulsed laser deposition without using buffer layers are discussed in this chapter. The crystallinity of the heterojunction was analyzed by high resolution X-ray diffraction and atomic force microscopy. The optical quality of the film was analyzed by room temperature (RT) photoluminescence measurements. The high intense band to band emission confirmed the high quality of the ZnO thin films on Si. The electrical properties of the junction were studied by temperature dependent resistivity, current- voltage measurements and RT capacitance-voltage (C-V) analysis. ZnO thin film showed the lowest resistivity of 6.4x10-3 Ω.cm, mobility of 7 cm2/V.sec and charge carrier concentration of 1.58x1019cm-3 at RT. The charge carrier concentration and the barrier height (BH) were calculated to be 9.7x1019cm-3 and 0.6 eV respectively from the C-V plot. The BH and ideality factor, calculated by using the thermionic emission (TE) model were found to be highly temperature dependent. We observed a much lower value in Richardson constant, 5.19x10-7 A/cm2K2 than the theoretical value (32 A/cm2K2) for ZnO. This analysis revealed the existence of a Gaussian distribution (GD) with a standard deviation of σ2=0.035 V. By implementing GD to the TE, the values of BH and Richardson constant were obtained as 1.3 eV and 39.97 A/cm2K2 respectively from the modified Richardson plot. The obtained Richardson constant value is close to the theoretical value for n-ZnO. These high quality heterojunctions can be used for solar cell applications. Chapter 4: This chapter describes the structural and optical properties of Li doped ZnO thin films and the properties of ZnO/Li doped ZnO multilayered thin film structures. Thin films of ZnO, Li doped ZnO (ZLO) and multilayer of ZnO and ZLO (ZnO/ZLO) were grown on silicon and Corning glass substrates by pulsed laser deposition technique. Single phase formation and the crystalline qualities of the films were analyzed by X-ray diffraction and Li composition in the film was investigated to be 15 Wt % by X-ray photoelectron spectroscopy. Raman spectrum reveals the hexagonal wurtzite structure of ZnO, ZLO and ZnO/ZLO multilayer, confirms the single phase formation. Films grown on Corning glass show more than 80 % transmittance in the visible region and the optical band gaps were calculated to be 3.245, 3.26 and 3.22 eV for ZnO, ZLO and ZnO/ZLO respectively. An efficient blue emission was observed in all films that were grown on silicon (100) substrate by photoluminescence (PL). PL measurements at different temperatures reveal that the PL emission intensity of ZnO/ZLO multilayer was weakly dependent on temperature as compared to the single layers of ZnO and ZLO and the wavelength of emission was independent of temperature. Our results indicate that ZnO/ZLO multilayer can be used for the fabrication of blue light emitting diodes. Chapter 5: This chapter is divided in to two parts. The fabrication and characterization of In doped ZnO thin films grown on Corning glass substrate is discussed in the first section. Zinc Oxide (ZnO) and indium doped ZnO (IZO) thin films with different indium compositions were grown by pulsed laser deposition technique. The effect of indium concentration on the structural, morphological, optical and electrical properties of the film was studied. The films were oriented along the c-direction with wurtzite structure and are highly transparent with an average transmittance of more than 80 % in the visible wavelength region. The energy band gap was found to be decreasing with increasing indium concentration. High transparency makes the films useful as optical windows while the high band gap values support the idea that the film could be a good candidate for optoelectronic devices. The value of resistivity observed to be decreasing initially with doping concentration and subsequently increasing. The XPS and Raman spectrum confirm the presence of indium in indium doped ZnO thin films. The photoluminescence spectrum showed a tunable red light emission with different In concentrations. Undoped and In doped ZnO (IZO) thin films were grown on Pt coated silicon substrates (Pt/Si) to fabricate Pt/ZnO:Inx Schottky contacts (SC) is discussed in the second section. The SCs were investigated by conventional two probe current-voltage (I-V) measurement and by the I-V spectroscopy of conductive atomic force microscopy (C-AFM). X-ray diffraction technique was used to examine the thin film quality. Changes in various parameters like Schottky barrier height (SBH) and ideality factor (IF) as a function of temperature were presented. The estimated BH was found to be increasing and the IF was found to be decreasing with increase in temperature. The variation of SBH and IF with temperature has been explained by considering the lateral inhomogeneities in nanometer scale lengths at metal–semiconductor (MS) interface. The inhomogeneities of SBH in nanometer scale length were confirmed by C-AFM. The SBH and IF estimated from I-V spectroscopy of C-AFM showed large deviation from the conventional two probe I-V measurements. IZO thin films showed a decrease in SBH, lower turn on voltage and an enhancement in forward current with increase in In concentration. Chapter 6: In this chapter the properties of Ga doped ZnO thin films with different Ga concentrations along with undoped ZnO as a reference is discussed. Undoped and Ga doped ZnO thin films with different Ga concentrations were grown on Corning glass substrates by PLD. The structural, optical and electrical properties of Ga doped ZnO thin films are discussed. The XRD, XPS and Raman spectrum reveal the phase formation and successful doping of Ga on ZnO. All the films show good transmittance in the visible region and the photoluminescence of Ga doped ZnO showed a stable emission in the blue- green region. The resistivity of Ga doped ZnO thin films was found to be first decreasing and then increasing with increase in Ga concentrations. Chapter 7: The effect of co-doping to ZnO on the structural, optical and electrical properties was described in this chapter. Ga and In co-doped ZnO (GIZO) thin films together with ZnO, In doped ZnO (IZO), Ga doped ZnO (GZO), IZO/GZO multilayer for comparison, were grown on Corning glass and boron doped Si substrates by PLD. GIZO showed better structural, optical and electrical properties compared with other thin films. The Photoluminescence spectra of GIZO showed a strong white light emission and the current-voltage characteristics showed relatively lower turn on voltage and larger forward current. The CIE co-ordinates for GIZO were observed to be (0.31, 0.33) with a CCT of 6650 K, indicating a cool white light and established a possibility of white light emitting diodes. Finally the chapter 8 presents the summary derived out of the work and a few suggestions on future work.

Increased interest in the field of sensor technology stems from the availability of an inexpensive and robust sensor to detect and quantify the presence of a specific gas. Bulk p-CuO/n-ZnO heterocontact based gas sensors have been shown to exhibit the necessary sensitivity and selectivity characteristics, however, low interfacial CuO/ZnO contact area and poor CuO/ZnO connectivity limits their effective use as gas sensors. The phase equilibria between CuO and ZnO exhibits limited solubility. By exploiting this concept, a CuO/ZnO mixed solution is formed by combining CuO and ZnO precursors using wet chemical (sol-gel) techniques. Thin films fabricated using this mixed solution exhibit a unique CuO/ZnO microstructure such that ZnO grains are surrounded by a network of CuO grains. This is highly beneficial in gas sensing applications since the CuO/ZnO heterostructure interfacial area is considerably increased and is expected to enhance sensing characteristics. This work builds on previous research by Dandeneau et al. (Thin film chemical sensors based on p-CuO/n-ZnO heterocontacts, Thin Solid Films, 2008). CuO/ZnO mixed solution thin films are fabricated using the sol-gel technique and subsequently characterized. X-ray diffraction (XRD) data confirms the phase separation between ZnO and CuO grains. Scanning electron microscopy (SEM) as well as energy dispersive spectroscopy (EDS) reveal a network of ZnO grains amidst a matrix of CuO grains. Optical and electrical characterization provide material parameters used to construct an energy band diagram for the CuO/ZnO heterostructure. Aluminum interdigitated electrodes (IDEs) are patterned on the thin film and gas sensing characteristics in the presence of oxygen and hydrogen are investigated. Optimization of the electrode geometry is explored with the aim of increasing the sensitivity of the sensor in the presence of hydrogen gas. / Graduation date: 2010

Les nanomatériaux et nanotechnologies sont devenus un élément incontournable dans l'électronique de faible puissance, la production énergétique / gestion et les réseaux sans fil, offrant la possibilité de construire une vision pour les capteurs autonomes. Cette thèse s’intéresse au concept de systèmes basse température utilisant des structures de matériaux hybrides organique/inorganique pour la réalisation de dispositifs électroniques faible coût, dont les transistors à effet de champ (FET) et les nanogénérateurs piézoélectriques (nommés PENGs) et ce, sur divers substrats en particulier plastiques. Pour atteindre ces objectifs, ce travail décrit d'abord la croissance contrôlée de nanostructures monocristallines de ZnO en utilisant des approches vapeur-liquide-solide (VLS) et hydrothermales à haute et basse température respectivement. Pour les dispositifs FET, les nanostructures ZnO obtenues par VLS sont utilisées en raison de leur haute qualité structurale et optique. Les sections suivantes présentent des différentes études menées pour optimiser les prototypes FET, comprenant (i) les contacts métal-semiconducteur, (ii) la qualité de l'interface semi-conducteur/isolant et (iii) l'épaisseur de diélectrique organique. La dernière section examine la possibilité de fabriquer des systèmes hybrides organiques/inorganiques pour PENGs utilisant l'approche hydrothermale. Certaines des questions clés, ce qui limitent les performances PENG sont abordés : (i) l'effet de porteurs libres et (ii) l'encapsulation polymère. Ce travail démontre le fort potentiel des ZnO nanostructures pour l'avenir de l'électronique. / Nanomaterials and nanotechnology has become a crucial feature in low-power electronics, energy generation/management and wireless networks, providing the opportunity to build a vision for autonomous sensors. The present thesis delivers the concept of low-temperature processable organic / inorganic hybrid systems for the realization of inexpensive electronic devices including field-effect transistors (FETs) and piezoelectric nanogenerators (PENGs) on various substrates including plastics. To achieve these objectives, this work first describes the controlled growth of single-crystalline ZnO nanostructures using high-temperature vapor-liquid-solid (VLS) and low-temperature hydrothermal approaches. For the FET devices, VLS grown ZnO nanostructures are used, owing to their high structural and optical quality. Later sections present different studies conducted to optimize the FET prototypes, includes: (i) metal-semiconductor contacts, (ii) semiconductor/insulator interface quality and (iii) organic dielectric thickness. The last section investigates the possibility to fabricate organic / inorganic hybrid systems for PENGs using hydrothermal approach. Some of the key issues, restricting the PENG performances are addressed: (i) screening effect from free charge carriers and (ii) polymer encapsulation. This work demonstrates the high potential of ZnO nanostructure for the future of electronics.

Nanostructured materials especially, one-dimensional (1D) nanostructures have unique physical, chemical, mechanical properties and are the building blocks for a range of nanoscale devices. The procedure employed for the synthesis of nanostructures involves the use of sophisticated instruments or rigorous chemical reactions. The motivation of our work is to develop a strategy that is simple, cost effective and applicable to a host of oxide materials. Nanostructures of various oxides have been grown from the metal as the source material. 1D ZnO nanostructures have been obtained by simply heating Zn metal in ambient air at temperatures below 600 °C. The nanostructures grow on the surface of the source material and the morphology is controlled by monitoring the curvature of the source material. This technique has an added advantage that neither any catalyst nor any gas flow is required. Tetrapods of ZnO are obtained when Zn is heated above 700 °C in ambient air. It has been shown that the morphology and the aspect ratio (length-to-diameter ratio) of the tetrapods depend on the temperature and the temperature gradient. Photoluminescence studies reveal good optical quality ZnO nanostructures. The technique employed to synthesize 1D ZnO nanostructures has been checked for other oxides. The temperature required for the synthesis of Ga2O3 nanostructures is 1200 °C. Many researchers have shown that Ga2O3 emits in the blue-green region. A red emission is required to get the impression of white light which has been seen for nitrogen doped Ga2O3. As the temperature is very high and Ga is heated in ambient air, unintentional nitrogen doping of 1D Ga2O3 nanostructures is obtained which is the reason for white light emission. The morphology of Ga2O3 nanostructures has been controlled by monitoring the curvature of the starting material as is the case of ZnO. Similar technique has also been employed for the synthesis of CuO nanostructures. The morphology is temperature dependent and 1D CuO nanostructures are obtained when the synthesis temperature is between 400 and 600 C. Possible growth mechanisms have been proposed for all these oxide materials. The entire thesis is based on the results discussed above. It has been organized as follows: Chapter 1 deals with the introduction to nanostructures, importance of 1D nanostructures, the specific applications of different morphologies, materials that are widely explored in the synthesis of nanostructures and different approaches to the synthesis of nanostructures. Growth mechanisms like VLS, VS and SLS are briefly discussed. A brief review on the basic physical properties, applications and different morphologies of ZnO, Ga2O3 and CuO is outlined with emphasis to the various synthesis techniques. Finally the aim and scope of the present work is discussed. Chapter 2 describes the experimental setup used for the synthesis and the basic principles of characterization techniques like x-ray diffraction (XRD), scanning electron microscopy (SEM), high resolution transmission electron microscopy (HRTEM), energy dispersive spectrum (EDS), electron energy loss spectroscopy (EELS), photoluminescence (PL), Raman spectroscopy, x-ray photoelectron spectroscopy (XPS), UV-Visible spectroscopy, Fourier Transform Infrared Spectroscopy (FTIR) and thermogravimetric analysis (TGA). Chapter 3 deals with the synthesis of 1D ZnO nanostructures with different morphologies such as nanoneedles, nanorods, nanobelts from Zn powder/granule. The growth process is found to be different from the conventional VS mechanism. The advantage and the versatility of the method is emphasized. In this method, neither a catalyst nor any gas flow is required for the synthesis of oxide nanostructures. Depending upon the Zn powder or Zn granules as the starting material different nanostructures of ZnO have been synthesized. The as-synthesized materials are characterized by XRD, SEM, HRTEM, EDS, TGA and Raman spectroscopy and the results are discussed. Chapter 4 describes the controlled growth of ZnO tetrapods and the influence of temperature and temperature gradient on the growth process. Though there are several methods to synthesize ZnO tetrapods and it has been established that ZnO tetrapods can be synthesized by heating Zn in air, it is advantageous to grow tetrapods of different morphologies with different lengths. The large scale synthesis of ZnO tetrapods by heating Zn in air ambient is discussed in this chapter. The key parameters that control the diameter, length, and morphology of tetrapods are identified. It is shown that the morphology and dimensions of the tetrapods depend not only on the vaporization temperature but also on the temperature gradient of the furnace. The influence of vaporization temperature and growth temperature on the morphology of the tetrapods is discussed elaborately. Chapter 5 explains the one-step synthesis of nitrogen doped Ga2O3 nanostructures of different morphologies and the different growth mechanisms. The experimental method employed for the synthesis of nanostructures is simple and is different from the other reported methods. Neither any catalyst/substrate preparation nor any gas flow is required for the synthesis of Ga2O3 nanostructures. The synthesis involves the heating of molten Ga at high temperatures. Single crystalline monoclinic phase of nitrogen-doped Ga2O3 nanorods, nanobelts and nanoneedles are obtained by this method. The morphology is controlled by monitoring the curvature of the Ga droplet which is achieved by using different substrates. Possible growth processes of different morphology have been proposed. Chapter 6 includes some surprising results on the white light emission of Ga2O3 nanorods. High synthesis temperature generates a high vapor pressure suitable for the growth of Ga2O3 nanorods, creates oxygen vacancy and incorporates nitrogen from the ambient. The oxygen vacancy is responsible for the bluish-green emission, while nitrogen is responsible for the red emission. As a consequence, white light emission is observed from Ga2O3 nanorods when irradiated with UV light. The interesting point is that neither post-treatment of the nanorods nor size control is required for white light emission. Chapter 7 describes the synthesis of CuO nanostructures by heating Cu foil in air ambient. This is an attempt to check whether the synthesis technique employed for ZnO and Ga2O3 is applicable to other oxides. The as-synthesized CuO nanostructures are characterized by XRD, SEM, HRTEM, EDS, TGA, UV-visible, FTIR and the results are discussed. Chapter 8 gives the conclusions and the overall summary of the thesis.

ZnO nanowires and nanorods are a new class of one-dimensional nanomaterials with a wide range of applications in NEMS. The motivation for this work stems from the lack of understanding and characterization of their thermomechanical behaviors essential for their incorporation in nanosystems. The overall goal of this work is to develop a fundamental understanding of the mechanisms controlling the responses of these nanostructures with focus on: (1) development of a molecular dynamics based framework for analyzing thermomechanical behaviors, (2) characterization of the thermal and mechanical behaviors in ZnO nanowires and (3) development of models for pseudoelasticity and thermal conductivity. The thermal response analyses show that the values of thermal conductivity are one order of magnitude lower than that for bulk ZnO due to surface scattering of phonons. A modified equation for phonon radiative transport incorporating the effects of surface scattering is used to model the thermal conductivity as a function of wire size and temperature. Quasistatic tensile loading of wires show that the elastic moduli values are 68.2-27.8% higher than that for bulk ZnO. Previously unknown phase transformations from the initial wurtzite (WZ) structure to graphitic (HX) and body-centered-tetragonal (BCT-4) phases are discovered in nanowires which lead to a more complete understanding of the extent of polymorphism in ZnO and its dependence on load triaxiality. The reversibility of the WZ-to-HX transform gives rise to a novel pseudoelastic behavior with recoverable strains up to 16%. A micromechanical continuum model is developed to capture the major characteristics of the pseudoelastic behavior accounting for size and temperature effects. The effect of the phase transformations on the thermal properties is characterized. Results obtained show that the WZ→HX phase transformation causes a novel transition in thermal response with the conductivity of HX wires being 20.5-28.5% higher than that of the initial WZ-structured wires. The results obtained here can provide guidance and criteria for the design and fabrication of a range of new building blocks for nanometer-scale devices that rely on thermomechanical responses.

This thesis focuses on the use of surface modifiers to tune the properties of both metals and metal oxides. Particular attention is given to examine the modification of transparent conducting oxides (TCOs) including indium tin oxide and zinc oxide both through the use of phosphonic acids as well as organic and metal-organic dopants. In this thesis a variety of known and new phosphonic acids are synthesized. A subset of these molecules are then used to probe the relationship between the ability of a phosphonic acid to tune the work function of ITO and how that interrelates with the coverage and molecular orientation of the modifier on the surface. Experimental techniques including XPS, UPS, and NEXAFS are coupled with theoretical DFT calculations in order to more closely examine this relationship. Literature surrounding the modification of zinc oxide with phosphonic acids is not as prevalent as that found for the modification of ITO. Thus, effort is placed on attempting to determine optimal modification conditions for phosphonic acids on zinc oxide. As zinc oxide is already a low work function metal oxide, modifiers were synthesized in an attempt to further decrease the work function of this substrate in an effort to minimize the barrier to carrier collection/injection. Etching of the substrate by phosphonic acids is also examined. In a related technique, n- and p-dopants are used to modify the surfaces of ITO, zinc oxide, and gold and it was found that the work function can be drastically altered, to approximately 3.3 – 3.6 eV for all three of the substrates examined. Surface reactions are straightforward to conduct typically taking only 60 s to achieve this change in work function.

Ce travail de thèse a pour sujet l'étude de transistors en couches minces (TFTs) à base d'Indium Gallium Zinc Oxide (IGZO). Nous nous sommes intéressés au procédé de réalisation des TFTs, et à la caractérisation des couches d'IGZO afin d'obtenir les caractéristiques au plus près de l'état de l'art. Nous avons également étudié le processus de passivation, paramètre identifié comme critique pour stabiliser les TFT et atteindre de bonnes performances.Dans un premier temps, nous avons mis au point les conditions du dépôt de la couche active, et de la réalisation des TFTs. Les analyses morphologiques et structurales ont montré l'absence de cristallites de couche, ainsi qu'une surface peu rugueuse. La densité des porteurs de charge de la couche IGZO diminue lorsque le débit d'oxygène, variable durant son dépôt, augmente. La couche active déposée à 200°C et à 4 sccm d'oxygène présente une densité de porteurs de charge de l'ordre de 1E17 cm-3, valeur adaptée au fonctionnement des TFTs.Dans un second temps, nous avons évalué l'influence d'un recuit sur les caractéristiques des TFTs. Nous avons mis en évidence que le recuit sous oxygène conduit à des TFTs opérationnels, tandis que celui sous azote ou en absence de recuit induisent une suppression de l'effet de champ. Nos études ont également montré qu'une température de recuit de 300°C est favorable aux performances des transistors. Les premiers TFTs présentent des mobilités entre 5 et 15 cm2/Vs, des rapports ION/IOFF de l'ordre de 1E7, et des pentes sous le seuil d'environ 0.3 V/décade. Les tensions de seuil (VT), quant à elles, demeurent faibles donc restent à améliorer.Pour finir, nous avons étudié l'impact d'une couche de passivation sur les TFTs, en raison de la dégradation des caractéristiques de ces derniers dans l'atmosphère ambiante. Les couches de SiO2 (déposée par PECVD) et d'Al2O3 (déposée par ALD) ont été étudiées. Nous avons mis en évidence que ces passivations peuvent dégrader les TFTs au lieu de les protéger. VT tend à se décaler dans le sens négatif lorsque l'on augmente l'épaisseur de la couche d'Al2O3 ou le débit de Silane durant le dépôt du SiO2. Une des raisons principales de ce phénomène est la présence de l'hydrogène généré lors de la passivation. Nous avons évalué les solutions pour éviter la dégradation lors du dépôt et assurer une bonne protection du TFT. / This thesis aims to study thin-film transistors (TFTs) based on Indium Gallium Zinc Oxide (IGZO) in the framework of applications in active matrix flat panel LCD and OLED display. The TFT fabrication process and the characterization of IGZO deposited film are two key studies in this thesis in order to obtain TFT electrical characteristics close to the state-of-the-art. We have also studied the passivation which is identified as crucial for stabilizing the TFT and achieving good performance.The deposition of the active layer and the fabrication process of TFT are firstly studied. Smooth surface of deposited films is demonstrated by AFM and the absence of the crystalline peak of the material is shown by X-ray diffraction. The density of charge carriers decreases with the increase of oxygen flow rate. The active layer deposited at 200°C and at 4 sccm of oxygen flow has a carrier density in the order of 1E17 cm-3 which is suitable for TFT operation. This condition is chosen to fabricate IGZO-based TFT in this thesis.In a second step, we have evaluated the influence of annealing condition on TFTs' electrical characteristics. Annealing in oxygen leads to operational TFTs while doing the same under nitrogen or the absence of annealing suppresses field-effect behavior. Our studies have also shown that annealing temperature of 300°C is suitable to obtain good performance of the transistors. From this study, we have obtained TFTs with high mobility (between 5 and 15 cm2/Vs), high ION/IOFF ratios (about 1E7), and reasonable sub threshold slope (about 0.3 V/decade). The threshold voltage (VT) however remains low (between -4 and -2 V) and needs to be improved.Finally, we have investigated the impact of a passivation layer on the performance of IGZO TFTs. SiO2 film (deposited by PECVD) and Al2O3 film (formed by ALD) were studied. We have observed that such passivation can degrade the TFTs rather than protecting them. Concretely, VT shifts in negative direction when increasing the Al2O3 layer thickness or the silane flow during SiO2 deposition. Principal reason for this shift is the presence of hydrogen which is generated during passivation. We have evaluated some solutions to reduce the degradation during deposition and ensure a good protection of the TFTs.

The work presented in this thesis focuses on the investigation and improvement of the window stack of layers for thin film CdTe solar cells fabricated in the Center for Renewable Energy Systems Technology (CREST) laboratories. In particular the aim was to change the standard structure including TCO, high resistive transparent (HRT)layer and CdS which is limited by the low transparency of the CdS layer, to a better performing one. The first result chapter of the thesis describes the study of ZnO HRT layers. ZnO thin films were deposited by radio frequency (RF) magnetron sputtering with different structural, optical and electrical properties which were characterized by X-ray diffraction, electron microscopy, spectrophotometry, Hall Effect method and 4-point probe. ZnO films were then incorporated in CdTe solar cells with the structure: FTO/ZnO/CdS/CdTe/Au back contact and the performance of these devices were compared with the film properties to single out trends and identify optimal film characteristics. By varying the deposition pressure of ZnO films, it was possible to increase their transparency and significantly increase their resistivity. While better transparency positively affected the solar cell current density output and efficiency, the resistivity of ZnO films did not show any clear impact on device efficiency. By increasing the deposition temperature the ZnO film grain size was increased. Increased FF was observed in devices incorporating ZnO layers with bigger grains, although this gain was partially counterbalanced by the Voc degradation, leading to a limited efficiency improvement. Finally the addition of oxygen had the main effect of increasing the resistivity of ZnO films, similarly to what happened with the increase of the sputtering pressure. In this case however, an improvement of FF, Jsc and efficiency was observed, especially at an O2/Ar ratio of 1%. By simulating the solar cells behavior with SCAPS-1D, it was found that these performance change can be explained by the variation of interface properties, precisely the amount of interface defects, rather than by bulk properties. The study presented in the second result chapter focuses on magnesium-doped zinc oxide (MZO) and the variation of its energy band structure. MZO was initially used as the HRT layer within a solar cell structure: FTO/MZO/CdS/CdTe/Au back contact. Sputtering MZO films with a target containing MgO 11 weight% and ZnO 89 weight% allowed for and increased band gap from 3.3 eV of intrinsic ZnO to 3.65 eV for MZO deposited at room temperature. Increasing the superstrate deposition temperature allowed for a further band gap increase up to 3.95 eV at 400 °C due mainly to an conduction band minimum upward shift. It was highlighted the importance to create a positive conduction band offset with the MZO layer conduction band slightly above the CdS conduction band, with an optimum found in this case to be 0.3 eV (efficiency 10.6 %). By creating a positive conduction band offset all the performance parameters (Voc, FF, Jsc, efficiency) significantly increased. One of the reasons for this improvement was found to be a diminished interface recombination due to a more ideal MZO/CdS band alignment. In the second part of this investigation the MZO was used as a replacement for the CdS in a simplified structure: FTO/MZO/CdTe/Au back contact. The concepts used to optimise the performance of these devices also involved tuning the conduction band alignment between MZO/CdTe and efficiencies of 12.5 % were achieved with a at conduction band offset. The efficiency increase was achieved mainly thanks to a better transparency of the MZO layer and a higher Jsc output, compared to devices using a CdS buffer layer. The MZO buffers have been tested in combination with different TCOs. Results are presented in the third result chapter and showed that AZO is a good alternative to FTO working effectively in combination with MZO. AZO/MZO efficiency thin film CdTe solar cells (12.6%, compared to 12.5% with FTO). It was found that increasing the IR transparency of the TCOs leads to a potentially higher Jsc. Achieving a better transparency was obtained by using TCOs with high mobility and lower carrier concentration (AZO and ITiO) and also by using a boro-aluminosilicate glass with low iron content. ITiO yielded the best opto-electrical properties among all the TCO materials. Devices incorporating ITiO however, showed lower performance then those using FTO and AZO. ITO/MZO windows also yielded poor performance. In addition, the ITO films deposited had a high carrier concentration leading to a high NIR absorption by plasma resonance and resulted not ideal for application in thin film CdTe PV.

Submitted by Thais Silva do Amaral null (thais_rpss@yahoo.com) on 2016-06-03T19:14:32Z No. of bitstreams: 1 Thais Silva do Amaral-Dissertação.pdf: 3804617 bytes, checksum: 8083e47078da73695bac6f8aa62e3778 (MD5) / Approved for entry into archive by Ana Paula Grisoto (grisotoana@reitoria.unesp.br) on 2016-06-08T13:24:26Z (GMT) No. of bitstreams: 1 amaral_ts_me_araiq_par.pdf: 1221750 bytes, checksum: e72ea0e2cee4ebb7654b4a0d18d9289f (MD5) / Made available in DSpace on 2016-06-08T13:24:26Z (GMT). No. of bitstreams: 1 amaral_ts_me_araiq_par.pdf: 1221750 bytes, checksum: e72ea0e2cee4ebb7654b4a0d18d9289f (MD5) Previous issue date: 2015-05-12 / Polímeros derivados do petróleo como polietileno tereftalato (PET) e polietileno naftalato (PEN), são utilizados em larga escala como substratos em diversos dispositivos eletrônicos. A crescente preocupação com o meio ambiente nos leva a buscar alternativas sustentáveis na utilização de materiais para fabricação de novas tecnologias. Neste trabalho, com o intuito de avaliar a viabilidade da substituição destes substratos por polímeros naturais, foi explorada uma biocelulose, a celulose bacteriana (CB), secretada por bactérias Acetobacter xylinum, que é um polímero de obtenção ―verde‖, não gerando resíduos ou altos impactos ambientais para ser produzida, além de possuir características desejáveis para ser utilizado como substrato em novos materiais, como resistência mecânica com módulo de Young de 134 GPa, tamanho nanométrico das fibras e transparência. Membranas funcionais foram obtidas pelo crescimento de nanofios de óxido de zinco na sua superfície. Os nanofios de ZnO foram obtidos com comprimento médio de 1,69 ± 0,08 μm e diâmetro de 37,2 ± 4,2 nm. Os materiais foram avaliados estruturalmente pela Difratometria de Raios-x (DRX) e Microscopia Eletrônica de Transmissão de Alta Resolução (HRTEM), e quimicamente utilizando Espectroscopia de Espalhamento Raman e Espectroscopia Vibracional na Região do Infravermelho (FT-IR). Também foram realizadas de medidas de Impedância Elétrica e Análise termogravimétrica (TG/DTG). Por fim os materiais foram testados em três diferentes aplicações: como membrana para fotodegradação de corantes, sensor piezoelétrico e substrato removível para obtenção de fios de ZnO não suportados que se mostraram aplicações viáveis para o material. / Petroleum-derived polymers such as Polyethylene Terephthalate (PET) and Polyethylene Naphthalate (PEN), are largely used as substrates in various electronic devices. The growing concern with the environment leads us to seek sustainable alternatives in the use of materials for the manufacture of new technologies. In this work, in order to assess the feasibility of replacing these substrates by natural polymers, bacterial cellulose (BC) was explored, secreted by bacteria Acetobacter xylinum is a ―green‖ polymer that don’t generate waste or high environmental impacts to be produced, and has desirable characteristics for use as new substrate materials, such as mechanical strength with Young's modulus of 134 Gpa, nano-sized fibers and transparency. Functional membranes were prepared by growing ZnO nanowires on the BC dried membranes surface. The obtained ZnO nanowires presented an average length of 1.69 ± 0.08 m and diameter of 37.2 ± 4.2 nm. Materials were evaluated structurally by X-ray Diffraction (XRD) and High-resolution Transmission Electron Microscopy (HRTEM), chemically using Raman Scattering spectroscopy and Vibrational Spectroscopy in the Infrared Region (FT-IR). Electrical Impedance measurements and thermal gravimetric analysis (TG / DTG) were performed as well. Finally the materials were tested in three different applications: as a membrane for dyes photodegradation, piezoelectric sensor and removable substrate for obtaining unsupported ZnO nanowires that are viable applications for the material.