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Semi conductors are of technological importance and attracted many of the re-searchers. ZnO belongs to the family of II-VI semiconductors and has material properties well suitable to UV light emitters, varistors, Schottky diodes, gas sensors, spintronics, ferroelectric devices and thin film transistors. It has been considered as a competitor to GaN, which belongs to the family of III-V semiconductors. This is due to the fact that ZnO of high quality can be deposited at lower growth temperatures than GaN, leading to the possibility of transparent junctions on less expensive substrates such as glass. This will lead to low-cost UV lasers with important applications in high-density data storage systems etc. One of the most popular growth techniques of ZnO is physical sputtering. As compared to sol-gel and chemical-vapor deposition, the magnetron sputtering is a preferred method because of its simplicity and low operating temperatures. Hence, detailed investigations were carried out on undoped and doped ZnO thin films primarily deposited by magnetron sputtering. The obtained results in the present work are presented in the form of a thesis. Chapter 1: A brief discussion on the crystal structure of ZnO material and its possible applications in the different areas such as Schottky diodes, spintronics, ferroelectric devices and thin film transistors are presented. Chapter 2: This chapter deals with various deposition techniques used in the present study. It includes the magnetron sputtering, thermal oxidation, pulsed-laser ablation and sol-gel technique. The experimental set up details and the deposition procedures are described in detail i.e., the deposition principle and the parameters that will affect the film properties. A brief note on the structural characterization equipments namely, X-ray diffraction, scanning electron microscopy, atomic force microscopy, transmission electron microscopy and the optical characterization equipments namely, transmission spectroscopy is presented. The transport properties of the films were studied which include Dielectric studies, impedance studies, device characterization and are discussed. Chapter 3: The optimization of ZnO thin films for Schottky diode formation and The characterization of various Schottky diodes is presented in this chapter. P-type conductivity in ZnO was implemented by the variation of partial pressure of oxygen during the sputtering and are discussed. A method to achieve low series resistance hetero-junction was achieved using thermal oxidation method and the detailed transport properties were studied. The optical investigation carried out on the ZnO thin films under various growth conditions are also presented. Chapter 4: This chapter deals with the processing, structural, electrical, optical and magnetic properties of Mn doped ZnO thin films grown by pulsed laser ablation. Structural investigations have shown that the Mn incorporation increases the c-axis length due to the relatively larger ionic size of the Mn ions. Studies conducted both at low and high concentration region of Zn1¡xMnxO thin films showed that the films are anti-ferromagnetic in nature. The transport measurements revealed that the electrical conductivity is dominated by the presence of shallow traps. Optical investigations suggested the absence of midgap absorption and confirm the uniform distribution of Mn in wurtzite structure. Chapter 5: Carrier induced ferromagnetism in Co doped ZnO thin films were studied and the results are presented in this chapter. High density targets were prepared by solid state reaction process and the thin films were deposited by pulsed laser ablation technique. Two compositions were studied and it was found that with increase in substrate temperature, c-axis length decreases. Optical studies suggested a strong mid gap absorption around 2eV and could be attributed to the d-d transitions of tetrahedral coordinated Co2+. The presence of ferromagnetism in these films makes them potential candidates for spintronics applications. Chapter 6: It has been reported in literature that o®-centered polarization will drive ferroelectric phase transition. Motivated by such results, substitution of Lithium in ZnO was studied in detail. The structural and electrical properties were investigated over a wide range of composition (0-25%). The ferroelectric studies were carried out both in metal-insulator-metal (MIM) and metal-insulator-semiconductor (MIS) configuration and are presented in this chapter. The appearance of Ferro electricity in these films makes them potential candidates for ferroelectric memory devices. Chapter 7: This chapter describes the studies conducted on Mg doped ZnO Thin films grown by multi-magnetron sputtering. The hexagonal phases of the films were evaluated. All the films exhibited c-axis preferred orientation towards (002) orientation. Micro structural evolutions of the films were carried out through scanning electron microscopy and atomic force microscopy. Ferroelectric properties were investigated in both metal-insulator-metal (MIM) and metal-insulator-semiconductor (MIS) configurations. It was observed that the Mg concentration increases the band gap and the details on optical investigations are also presented in this chapter. Chapter 8: ZnO based thin film transistors have been fabricated and characterized using ZnO as active channel layer and Mg doped ZnO as dielectric layer. Excellent leakage properties of the gate dielectric were studied and presented in this chapter. These studies demonstrated that Mg doped ZnO thin films are suitable candidates for gate dielectric applications. Conclusions: This section presents the conclusions derived out of the present work. It also includes a few suggestions on future work on this material.

Increased interest in the field of sensor technology stems from the availability of an inexpensive and robust sensor to detect and quantify the presence of a specific gas. Bulk p-CuO/n-ZnO heterocontact based gas sensors have been shown to exhibit the necessary sensitivity and selectivity characteristics, however, low interfacial CuO/ZnO contact area and poor CuO/ZnO connectivity limits their effective use as gas sensors. The phase equilibria between CuO and ZnO exhibits limited solubility. By exploiting this concept, a CuO/ZnO mixed solution is formed by combining CuO and ZnO precursors using wet chemical (sol-gel) techniques. Thin films fabricated using this mixed solution exhibit a unique CuO/ZnO microstructure such that ZnO grains are surrounded by a network of CuO grains. This is highly beneficial in gas sensing applications since the CuO/ZnO heterostructure interfacial area is considerably increased and is expected to enhance sensing characteristics. This work builds on previous research by Dandeneau et al. (Thin film chemical sensors based on p-CuO/n-ZnO heterocontacts, Thin Solid Films, 2008). CuO/ZnO mixed solution thin films are fabricated using the sol-gel technique and subsequently characterized. X-ray diffraction (XRD) data confirms the phase separation between ZnO and CuO grains. Scanning electron microscopy (SEM) as well as energy dispersive spectroscopy (EDS) reveal a network of ZnO grains amidst a matrix of CuO grains. Optical and electrical characterization provide material parameters used to construct an energy band diagram for the CuO/ZnO heterostructure. Aluminum interdigitated electrodes (IDEs) are patterned on the thin film and gas sensing characteristics in the presence of oxygen and hydrogen are investigated. Optimization of the electrode geometry is explored with the aim of increasing the sensitivity of the sensor in the presence of hydrogen gas. / Graduation date: 2010

The primary objective of this thesis is to develop a process for fabricating integrated circuits based on thin-film transistors (TFTs) using zinc tin oxide (ZTO) as the channel layer. ZTO, in contrast to indium- or gallium-based amorphous oxide semiconductors (AOS), is perceived to be a more commercially viable AOS choice due to its low cost and ability to be deposited via DC reactive sputtering. In the absence of an acceptable ZTO wet etch process, a plasma-etching process using Ar/CH₄ is developed for both 1:1 and 2:1 ZTO compositions. An Ar/CH₄ plasma etch process is also designed for indium gallium oxide (IGO), indium gallium zinc oxide (IGZO), and indium tin oxide (ITO). Ar/CH₄ dry etches have excellent selectivity with respect to SiO₂, providing a route for obtaining patterned ZTO channels. A critical asset of ZTO process integration involves removing polymer deposits after ZTO etching without active layer damage. A ZTO process is developed for the fabrication of integrated circuits which use ZTO channel enhancement-mode TFTs. Such ZTO TFTs exhibit incremental and average mobilities of 23 and 18 cm²V⁻¹s⁻¹, respectively, turn-on voltages approximately 0 to 1.5 V and subthreshold swings below 0.5 V/dec when annealed in air at 400 °C for 1 hour. Several types of ZTO TFT circuits are realized for the first time. Despite large parasitic capacitances due to large gate-source and gate-drain overlaps, AC/DC rectifiers are fabricated and found to operate in the MHz range. Thus, they are usable for RFID and other equivalent-speed applications. Finally, a ZTO process for simultaneously fabricating both enhancement-mode and depletion-mode TFTs on a single substrate using a single target and anneal step is developed. This dual-channel process is used to build a high-gain two-transistor enhancement/depletion inverter. At a rail voltage of 10 V, this inverter has a gain of 10.6 V/V, the highest yet reported for an AOS-based inverter. This E/D inverter is an important new functional block which will enable the realization of more complex digital logic circuits. / Graduation date: 2009

Metal oxide nanocrystals have attracted significant interests due to their unique chemical, physical, and electrical properties which depend on their size and structure. In this study, a continuous flow microreactor system was employed to synthesize metal oxide nanocrystals in aqueous solution. Assembly of nanocrystals is considered one of the most promising approaches to design nano-, microstructures, and complex mesoscopic architectures. A variety of strategies to induce nanocrystal assembly have been reported, including directed assembly methods that apply external forces to fabricate assembled structures. In this study ZnO nanocrystals were synthesized in an aqueous solution using a continuous flow microreactor. The growth mechanism and stability of ZnO nanocrystals were studied by varying the pH and flow conditions of the aqueous solution. It was found that convective fluid flow from Dean vortices in a winding microcapillary tube could be used for the assembly of ZnO nanocrystals. The ZnO nanocrystal assemblies formed three-dimensional mesoporous structures of different shapes including a tactoid, a retangle and a sphere. The assembly results from a competing interaction between electrostatic forces caused by surface charge of nanocrystals and collision of nanocrystals associated with Dean vortices. The as synthesized colloidal ZnO nanocrystals or assembly were directly deposited onto a substrate to fabricate ZnO nanostructured surfaces. The rectangular assembly led to flower-like ZnO nanostructured films, while the spherical assembly resulted in amorphous ZnO thin film and vertical ZnO nanowire (NW) arrays. In contrast to the formation of flower structure or amorphous thin film, only colloidal ZnO nanocrystals were used as the building blocks for forming vertical ZnO NW arrays. This study demonstrates the versatility of the microreactor-assisted nanomaterial synthesis and deposition process for the production of nanostrucuturesres with various morphologies by tuning the physical parameters while using the same chemical precursors for the synthesis. ZnO flower structure was coated on a microwick structure to improve the capillary flow. The coated microwick structure showed an enhanced capillary rise, which was attributed to the hydrophilic property and geometrical modification of ZnO nanostructure. Two-phase boiling heat transfer was performed using ZnO nanostructured surfaces. ZnO nanocoating altered the important characteristics including surface roughness and wettability. Hydrophilic nature of the ZnO nanocoating generally enhanced the boiling heat transfer performance, resulting in higher heat transfer coefficient (HTC), higher critical heat flux (CHF), and lower surface superheat comparing to the bare surface. Octahedral SnO and porous NiO films, fabricated by a continuous flow microreactor system, were suggested as potential boiling surfaces for the high porosity and irregularity of their structures. / Graduation date: 2013

Sensors is one of the major areas of current research. Thin film micro/nano sensors are gaining attention worldwide, as there is necessity of miniaturization. There are varieties of sensors available by utilizing different materials in bulk and thin film form for measuring parameters like temperature, pressure, flow, humidity etc. Apart from these, there are various sensors available to measure impact force. Impact sensor offers potential application possibilities in robotics, aerospace, structural & mechanical engineering and related areas. Many physical principles have been explored for the realization of impact sensor. The present thesis reports the efforts made in developing impact sensor using piezoelectric thin film. The necessary brief background information on impact sensors is presented in Chapter 1. This includes the description of available literature on impact sensors and their probable applications. In Chapter 2, a review of the various techniques such as thin film deposition techniques, film thickness measurement techniques, thin film characterization techniques, used in our work are explained in detail. Chapter 3 explains the direct and indirect methods of characterization used for confirming the piezoelectric property of zinc oxide thin films. The detailed experimental work carried out in realizing the impact sensor using piezoelectric thin films is presented in chapter 4. This includes design of the sensor, calibration setup used & the procedure followed and results obtained. Finally, we present the summary of the work carried out in the thesis, conclusions arrived at and the scope for carrying out further work in the direction of making the sensor more efficient.

Amorphous oxide semiconductors (AOSs) are of great current interest for thin-film transistor (TFT) channel layer applications. In particular, indium gallium zinc oxide (IGZO) is under intense development for commercial applications because of its demonstrated high performance at low processing temperatures. The objective of the research presented in this thesis is to provide detailed assessments of device stability, temperature dependence, and related phenomena for IGZO-based TFTs processed at temperatures between 200 °C and 300 °C. TFTs tested exhibit an almost rigid shift in log₁₀(I[subscript D]) – V[subscript GS] transfer curves in which the turn-on voltage, V[subscript ON], moves to a more positive gate voltage with increasing stress time during constant-voltage bias-stress testing of IGZO TFTs. TFT stability is improved as the post-deposition annealing temperature increases over the temperature range of 200 – 300 ºC. The turn-on voltage shift induced by constant-voltage bias-stressing is at least partially reversible; V[subscript ON] tends to recover towards its initial value of V[subscript ON] if the TFT is left unbiased in the dark for a prolonged period of time and better recovery is observed for a longer recovery period. V[subscript ON] for a TFT can be set equal to zero after bias-stress testing if the TFT electrodes are grounded and the TFT is maintained in the dark for a prolonged period of time. Attempts to accelerate the recovery process by application of a negative gate bias at elevated temperature (i.e., 100 ºC) were unsuccessful, resulting in severely degraded subthreshold swing. An almost rigid log₁₀(I[subscript D]) – V[subscript GS] transfer curve shift to a lower (more negative) V[subscript ON] with increasing temperature is observed in the range of –50 °C to +50 °C, except for a TFT with an initial V[subscript ON] equal to zero, in which case the log₁₀(ID) – V[subscript GS] transfer curve is temperature-independent. A more detailed temperature-dependence assessment, however, indicates that the log₁₀(I[subscript D]) – V[subscript GS] transfer curve shift is not exactly rigid since the mobility is found to increase slightly with increasing temperature. A noticeable anomaly is observed in certain log₁₀(I[subscript D]) – VGS transfer curves, especially when obtained at elevated temperature (e.g., 30 and 50 ºC), in which I[subscript D] decreases precipitously near zero volts in the positive gate voltage sweep. This anomaly is attributed to a gate-voltage-step-involved detrapping and subsequent retrapping of electrons in the accumulation channel and/or channel/gate insulator interface. In fact, all IGZO TFT stability and temperature-dependence trends are attributed to channel interface and/or channel bulk trapping/detrapping. / Graduation date: 2009

Cette thèse s’inscrit dans le cadre d’une cotutelle internationale entre l’Université de Bourgogne Franche-Comté en France et l’Université de Sherbrooke au Canada. Elle porte sur le développement d'un biocapteur miniature pour la détection et la quantification de bactéries dans des milieux liquides complexes. La bactérie visée est l’Escherichia coli (E. coli), régulièrement mise en cause dans des épidémies d'infections alimentaires, et parfois meurtrière.La géométrie du biocapteur consiste en une membrane en arséniure de gallium (GaAs) sur laquelle est déposé un film mince piézoélectrique d’oxyde de zinc (ZnO). L'apport du ZnO structuré en couche mince constitue un réel atout pour atteindre de meilleures performances du transducteur piézoélectrique et consécutivement une meilleure sensibilité de détection. Une paire d'électrodes déposée sur le film de ZnO permet de générer sous une tension sinusoïdale une onde acoustique se propageant dans le GaAs, à une fréquence donnée. La face arrière de la membrane, quant à elle, est fonctionnalisée avec une monocouche auto-assemblée (SAM) d'alkanethiols et des anticorps anti-E. coli, conférant la spécificité de la détection. Ainsi, le biocapteur bénéficie à la fois des technologies de microfabrication et de bio-fonctionnalisation du GaAs, déjà validées au sein de l’équipe de recherche, et des propriétés piézoélectriques prometteuses du ZnO, afin d’atteindre potentiellement une détection hautement sensible et spécifique de la bactérie d’intérêt. Le défi consiste à pouvoir détecter et quantifier cette bactérie à de très faibles concentrations dans un échantillon liquide et/ou biologique complexe.Les travaux de recherche ont en partie porté sur les dépôts et caractérisations de couches minces piézoélectriques de ZnO sur des substrats de GaAs. L’effet de l’orientation cristalline du GaAs ainsi que l’utilisation d’une couche intermédiaire de Platine entre le ZnO et le GaAs ont été étudiés par différentes techniques de caractérisation structurale (diffraction des rayons X, spectroscopie Raman, spectrométrie de masse à ionisation secondaire), topographique (microscopie à force atomique), optique (ellipsométrie) et électrique. Après la réalisation des contacts électriques, la membrane en GaAs a été usinée par gravure humide. Une fois fabriqué, le transducteur a été testé en air et en milieu liquide par des mesures électriques, afin de déterminer les fréquences de résonance pour les modes de cisaillement d’épaisseur. Un protocole de bio-fonctionnalisation de surface, validé au sein du laboratoire, a été appliqué à la face arrière du biocapteur pour l’ancrage des SAMs et des anticorps, tout en protégeant la face avant. De plus, les conditions de greffage d’anticorps en termes de concentration utilisée, pH et durée d’incubation, ont été étudiées, afin d’optimiser la capture de bactérie. Par ailleurs, l’impact du pH et de la conductivité de l’échantillon à tester sur la réponse du biocapteur a été déterminé. Les performances du biocapteur ont été évaluées par des tests de détection de la bactérie cible, E. coli, tout en corrélant les mesures électriques avec celles de fluorescence. Des tests de détection ont été réalisés en variant la concentration d’E. coli dans des milieux de complexité croissante. Différents types de contrôles ont été réalisés pour valider les critères de spécificité. En raison de sa petite taille, de son faible coût de fabrication et de sa réponse rapide, le biocapteur proposé pourrait être potentiellement utilisé dans les laboratoires de diagnostic clinique pour la détection d’E. coli. / This thesis was conducted in the frame of an international collaboration between Université de Bourgogne Franche-Comté in France and Université de Sherbrooke in Canada. It addresses the development of a miniaturized biosensor for the detection and quantification of bacteria in complex liquid media. The targeted bacteria is Escherichia coli (E. coli), regularly implicated in outbreaks of foodborne infections, and sometimes fatal.The adopted geometry of the biosensor consists of a gallium arsenide (GaAs) membrane with a thin layer of piezoelectric zinc oxide (ZnO) on its front side. The contribution of ZnO structured in a thin film is a real asset to achieve better performances of the piezoelectric transducer and consecutively a better sensitivity of detection. A pair of electrodes deposited on the ZnO film allows the generation of an acoustic wave propagating in GaAs under a sinusoidal voltage, at a given frequency. The backside of the membrane is functionalized with a self-assembled monolayer (SAM) of alkanethiols and antibodies anti-E. coli, providing the specificity of detection. Thus, the biosensor benefits from the microfabrication and bio-functionalization technologies of GaAs, validated within the research team, and the promising piezoelectric properties of ZnO, to potentially achieve a highly sensitive and specific detection of the bacteria of interest. The challenge is to be able to detect and quantify these bacteria at very low concentrations in a complex liquid and/or biological sample.The research work partly focused on the deposition and characterization of piezoelectric ZnO thin films on GaAs substrates. The effect of the crystalline orientation of GaAs and the use of a titanium / platinum buffer layer between ZnO and GaAs were studied using different structural (X-ray diffraction, Raman spectroscopy, secondary ionization mass spectrometry), topographic (atomic force microscopy), optical (ellipsometry) and electrical characterizations. After the realization of the electrical contacts on top of the ZnO film, the GaAs membrane was micromachined using chemical wet etching. Once fabricated, the transducer was tested in air and liquid medium by electrical measurements, in order to determine the resonance frequencies for thickness shear mode. A protocol for surface bio-functionalization, validated in the laboratory, was applied to the back of the biosensor for anchoring SAMs and antibodies, while protecting the top side. Furthermore, different conditions of antibody grafting such as the concentration, pH and incubation time, were tested to optimize the immunocapture of bacteria. In addition, the impact of the pH and the conductivity of the solution to be tested on the response of the biosensor has been determined. The performances of the biosensor were evaluated by detection tests of the targeted bacteria, E. coli, while correlating electrical measurements with fluorescence microscopy. Detection tests were completed by varying the concentration of E. coli in environments of increasing complexity. Various types of controls were performed to validate the specificity criteria. Thanks to its small size, low cost of fabrication and rapid response, the proposed biosensor has the potential of being applied in clinical diagnostic laboratories for the detection of E. coli.

Man’s desire to replicate/mimic the nature’s creation provided an impetus and inspiration to the rapid advancements and progress made in the sensors and actuators technology. A normal human being has five basic sensory organs, which helps and guides him in performing the routine tasks. This underlines the importance of basic sensory organs in a human life. In a similar fashion, sensors and actuators are of paramount importance for most of the science and engineering applications. The aim of the present thesis work is to explore the application of piezoelectric ZnO thin films deposited on a flexible substrate for the development of sensors and actuators. Detailed study was performed on the suitability of three different flexible substrates namely Phynox, Kapton and Mylar. However, Phynox alloy substrate was found to be a suitable substrate material for the above mentioned applications. Sputtering technique was chosen for the deposition of ZnO thin films on to Phynox substrate. The necessary process parameters were optimized to achieve good quality piezoelectric thin films. In the present work, sensors have been developed by utilizing the direct piezoelectric effect of ZnO thin films deposited on Phynox alloy substrate. These includes a flow sensor for gas flow rate measurement, impact sensor for non-destructive material discrimination study and a Thin Film Sensor Array (TFSA) for monitoring the impact events. On the other hand, using the converse piezoelectric effect of ZnO thin films, actuators have also been developed. These include a thin film micro actuator and a Thin Film Micro Vibrator (TFMV) for vibration testing of micro devices. The thesis is divided into following seven chapters. Chapter 1: This chapter gives a general introduction about sensors and actuators, piezoelectric thin films, flexible substrates, thin film deposition processes and characterization techniques. A brief literature survey of different applications of piezoelectric thin films deposited on various flexible substrates in device development is presented. Chapter 2: A novel flexible metal alloy (Phynox) and its properties along with its applications are discussed in this chapter. ZnO thin films were deposited on Phynox substrate by Rf reactive magnetron sputtering technique. The sputtering process parameters such as: Ar:O2 gas ratio, substrate temperature and RF power were optimized for the deposition of good quality piezoelectric ZnO thin films. The deposited ZnO thin films were characterized using XRD, SEM, AFM and d31 coefficient measurement techniques. Chapter 3: It reports on the comparative study of properties of piezoelectric ZnO thin films deposited on three different types of flexible substrates. The substrate materials employed were a metal alloy (Phynox), polyimide (Kapton), and polyester (Mylar). Piezoelectric ZnO thin films deposited on these flexible substrates were characterized by XRD, SEM, AFM and d31 coefficient measurement techniques. A vibration sensing test was also performed for the confirmation of good piezoelectric property. Compared to the polymer flexible substrates, the metal alloy flexible substrate (Phynox) was found to be more suitable for integrating ZnO thin film for sensing applications. Chapter 4: The development of a novel gas flow sensor for the flow rate measurement in the range of L min-1 is presented in this chapter. The sensing element is a Phynox alloy cantilever integrated with piezoelectric ZnO thin film. A detailed theoretical analysis of the experimental set–up showing the relationship between output voltage generated and force at a particular flow rate has been discussed. The flow sensor is calibrated using an in-house developed testing set-up. Chapter 5: This chapter is divided into two sections. Section 5.1 reports on the development of a novel packaged piezoelectric thin film impact sensor and its application in non-destructive material discrimination studies. Different materials (Iron, Glass, Wood and Plastic) were successfully discriminated by using the developed impact sensor. The output response of impact sensor showed good linearity and repeatability. The impact sensor is sensitive, reliable and cost-effective. Section 5.2 reports on the development of a Thin Film Senor Array (TFSA) for monitoring the location and magnitude of the impact force. The fabricated TFSA consists of evenly distributed ZnO thin film sensor array. Chapter 6: It consists of two sections. Section 6.1 reports on the fabrication of micro actuator using piezoelectric ZnO thin film integrated with flexible Phynox substrate. A suitable concave Perspex mounting was designed for the actuator element. The actuator element was excited at different frequencies for the supply voltages of 2V, 5V and 8V. The developed micro actuator has the potential to be used as a micro pump for pumping nano liters to micro liters of fluids. Section 6.2 reports the design and development of a portable ready to use Thin Film Micro Vibrator (TFMV). The TFMV is capable of providing the vibration amplitude in the range of nanometer to micrometer. A thin silicon diaphragm was used as a test specimen for its vibration testing studies using the developed TFMV. The TFMV is light-weight and have internal battery, hence no external power supply is required for its functioning. Chapter 7: The first section summarizes the salient features of the work presented in this thesis. In the second section the scope for carrying out the further work is given.

The basic necessities to sustain life are – air, water and food. Although the harmful effects due to contaminated food or water are dangerous to life, these can be reduced/avoided by controlling the intake. Whereas, in case of air, the same amount of control cannot be exercised as there is very little, one can do in case of inhalation. Maximum damage to life is due to air contamination which can be detected and prevented by using gas sensors. The proper use of these sensors not only save lives, but also minimizes social and financial loss. The objective of this thesis work is to study and explore the use of p-type semiconducting material such as CuO, as a promising gas sensing material for organic compounds (VOCs), compatible with existing silicon fabrication technology. The Thesis consist of 7 chapters: Chapter 1 covers the general introduction about gas sensors, sensor parameters, criteria for the selection of sensing material, suitability of CuO as sensing material and a brief literature survey. The second chapter includes the selection of substrate, cleaning procedures and suitable deposition method. The deposition method used in the present thesis work is DC/RF magnetron sputtering. The reactive magnetron sputtering is employed during the deposition of CuO sensing films. It also includes basic introduction about some of the common material characterization techniques. This is followed by Chapter 3 which includes the optimization of sputtering process parameters such as applied power, working pressure, Ar-O2 ratio and substrate temperature for CuO sensing film and the effect of these on surface morphology. Information on the optimized sputtering parameters for electrode film (silver and gold) deposition has also been included in this chapter. In order to study the sensing behavior of the sensor, suitable testing set-up is necessary. This leads us to Chapter 4 that discusses the development of an in-house built sensor testing setup and its automization using MATLAB. The automated testing set-up facilitates off-time data plotting as well as real-time data plotting during the sensing process. To demonstrate the working of the set-up, some initial results obtained are also included in this chapter. After ascertaining the functioning of the automated gas sensor testing set-up, detailed study on the sensing behavior of nanostructured CuO films was performed. This information along with the necessary details is included in Chapter 5. The sensing response of nanostructured CuO films has been studied for different VOCs such as alcohol, toluene and benzene. The study carried out on the effect of different surface additives like multi-walled carbon nanotubes (MWNTs), gold or platinum on ethanol sensing has also been included in this chapter. During the use of MWNTs as surface additives, different concentrations of MWNTs – 0.01 mg, 0.05 mg and 0.1 mg have been dispersed on the CuO sensing film. The sample with lowest concentration of MWNTs exhibited highest sensitivity and lower response time. It is due to the fact that, higher concentrations of MWNTs do not result into uniform dispersion over the CuO films and cover the sensing film almost completely. Operating temperature is the most important factor affecting the performance of a gas sensor. In order to maintain the operating temperature for the portable sensor, the sensor is usually integrated with a heater. The chapter 6 deals with heater optimization including design, simulation and fabrication. In this chapter, microheater as well as macro-heaters were simulated and fabricated. The fabricated macro-heater is bonded with the sensor by eutectic bonding. One of the bonded samples was studied for its sensing response. The final chapter of the thesis deals with the conclusion of present research work and the possible further work on CuO gas sensor.