Thesis (Ph. D.)--Lehigh University, 1998. / Includes vita. Includes bibliographical references.

This thesis present photoluminescence spectroscopy and X-ray diffraction analyses of four different cadmium zinc telluride samples with different quality and features and similar zinc molar concentration of 10%. Photoluminescence spectroscopy of the samples let us obtain several physical parameters of the samples which are indicators of quality, composition, structure, and impurity levels of the samples. The band gap energy of the samples obtained from the photoluminescence spectra at low temperatures helped us to estimate zinc molar concentration of the samples. Temperature dependence of band gap energy in these samples has been analyzed and exciton-LO phonon interactions in the samples has been analyzed. From temperature dependence of full width at half maximum of the photoluminescence peak several parameters including concentration of impurity centers and inhomogeneity of the samples are determined and compared in order to check the quality of the samples. Thermal quenching of the photoluminescence peak has been analyzed and the processes which are associated with each parameter are determined and discussed. X-ray diffraction analyses of the sample for the location and width of the peaks have been analyzed and several characteristics of the samples including quality, lattice constant and zinc molar concentration of the samples are determined and compared. The parameters that are obtained from these analyses are compared with the ones from the photoluminescence spectra and showed a good agreement between the results of these two non-destructive characterization techniques. / Graduate / 0605 / 0544 / 0794

This thesis present photoluminescence spectroscopy and X-ray diffraction analyses of four different cadmium zinc telluride samples with different quality and features and similar zinc molar concentration of 10%. Photoluminescence spectroscopy of the samples let us obtain several physical parameters of the samples which are indicators of quality, composition, structure, and impurity levels of the samples. The band gap energy of the samples obtained from the photoluminescence spectra at low temperatures helped us to estimate zinc molar concentration of the samples. Temperature dependence of band gap energy in these samples has been analyzed and exciton-LO phonon interactions in the samples has been analyzed. From temperature dependence of full width at half maximum of the photoluminescence peak several parameters including concentration of impurity centers and inhomogeneity of the samples are determined and compared in order to check the quality of the samples. Thermal quenching of the photoluminescence peak has been analyzed and the processes which are associated with each parameter are determined and discussed. X-ray diffraction analyses of the sample for the location and width of the peaks have been analyzed and several characteristics of the samples including quality, lattice constant and zinc molar concentration of the samples are determined and compared. The parameters that are obtained from these analyses are compared with the ones from the photoluminescence spectra and showed a good agreement between the results of these two non-destructive characterization techniques. / Graduate / 0605 / 0544 / 0794

Thesis (M.S.)--University of Texas at El Paso, 2008. / Title from title screen. Vita. CD-ROM. Includes bibliographical references. Also available online.

Thesis (M.S.)--University of Texas at El Paso, 2008. / Title from title screen. Vita. CD-ROM. Includes bibliographical references. Also available online.

No description available.

The CdTe family members (in particular CdZnTe) remain the substrate of choice for epitaxial growth of HgCdTe for use in high performance infrared (IR) detectors and focal plane arrays. This is the case despite advances in the use of alternate substrate technologies such as buffered GaAs and GaAs on Si; these technologies, to date, have not reproducibly demonstrated device performance comparable to the arrays made in HgCdTe grown on CdZnTe and CdTe. The quality of CdTe family materials has improved significantly over the past several years and so the quality and reproducibility of IR detectors has improved along with them. It is clear, however, that CdTe family substrates still have a significant impact on the performance of HgCdTe devices and that further research is required to reduce the effects of substrate on these devices. Unlike silicon or gallium arsenide, it is very difficult to grow the large area single crystals of CdZnTe due to thermodynamic limitations. It has the lowest thermal conductivity among all semiconductors that makes it difficult to obtain planar solid-liquid interface, which is desirable for the growth of large area single crystals of CdZnTe. Due to its high ionicity and weak bonding, defects are easily incorporated during the growth. Also, it is well established that both the structural defects and impurity content of Hg1-xCdxTe epitaxial layers are strongly influenced by the quality of the substrates used in the epitaxial growth process. A substrate of poor structural quality will result in a poor substrate/layer interface from which defects will propagate into the epilayer. It is known that our focal plane arrays (FPAs) are backside illuminated, with the device connected to underlying silicon multiplexer, using a matrix of indium bumps. Thus the substrate should have high IR transmission to pass the radiation on to the detector for collection. High IR transmission requires chemically and electrically homogeneous crystals free from extraneous second phase particles. This objective is one of the most difficult thermodynamic and technological problems in the growth of CdTe and related alloys. The bulk CdZnTe crystals grown from melt suffer from the inherent disadvantage of accommodating tellurium precipitates because of high growth temperature and phase diagram limitations. These tellurium (Te) precipitates condense as cadmium vacancies and Te interstitials during the cooling process, which contribute to intrinsic point defects. Although extensive efforts have been made in the area of purification of the CdZnTe crystals by using 6N pure starting materials, still the high temperature melt growth leads to impurity pickup during the crystal growth process. This deviation in the stoichiometry, especially due to free carriers, impurities and second phase tellurium precipitates, play the major role in reducing the infrared transmission through the CdZnTe substrate material. Also they affect the device performance when used for detector applications. In this context a thorough investigation of the non-stoichiometry of the CdZnTe material is mandatory to improve the material quality. It is my endeavor in this respect to present in this thesis “optical and structural investigations of defects in CdZnTe (Zn~4%) crystals”. The present thesis has been organized into six chapters. Chapter 1: It presents an up to date comprehensive review of the defects in CdTe binary and CdZnTe ternary compound semiconductors. It includes an introduction to the ternary II-VI cadmium zinc telluride with potential device applications. Issues related to CdTe based substrates for infrared (IR) applications have been discussed. Growth as well as several material aspects like crystal structure, band structure, mechanical, thermal, optical and dielectric properties have been discussed in details. The chapter ends with the motivation and scope for the present thesis. Chapter 2 : Te precipitates were identified and characterized in CdZnTe (Zn ~ 4%) crystals using various physical characterization techniques and the results are presented in Chapter 2. X-ray diffraction rocking curve measurements were carried out on a series of samples to assess the overall crystalline quality of the as grown CdZnTe crystals, in conjunction with Fourier transform infrared (FTIR) absorption spectroscopy measurements to identify the presence of Te precipitates. Further, the CdZnTe samples having Te precipitates were systematically characterized using micro-Raman imaging technique. CdZnTe wafers grown in three and six zone furnaces using quartz and/or pyrolytic boron nitride (PBN) crucibles have been subjected to micro-Raman imaging to quantify and understand the nature of Te precipitates. It is well known that for the normal phase of Te precipitates, the Raman modes appear centered around 121 (A1), 141(E) /TO (CdTe) cm -1and a weak mode around 92 (E) cm -1 in CdZnTe indicating the presence of trigonal lattice of Te. Using the micro-Raman maps and taking the spatial distribution of the area ratio of 121 to 141 cm-1 Raman modes, the size and distribution of Te precipitates were estimated. A substantial reduction in Te precipitate size and an improvement in the IR transmission in the 2.2 – 5 µm IR window was observed in the CdZnTe crystals subjected to post growth annealing under Cd+Zn vapors at 650 oC for 6 hrs. Also it is shown that the samples grown in pyrolytic boron nitride (PBN) crucibles have shown an overall improvement in the crystalline quality and reduction in the Te precipitate size as compared to the samples grown in quartz crucibles. The possible reasons for these observations have been discussed in chapter 2. The presence of Te precipitates under high pressure phase was detected by the blueshift of the Raman bands that appear at 121 (A1) cm-1for a normal Te phase, indicating that these micro-Raman maps are basically the distribution of Te precipitates in different phases. NIR microscopy imaging has been carried out to further substantiate the presence of Te precipitates under high pressure phase and that of larger Te precipitates. The significance of micro-Raman imaging lies in quantifying and demonstrating the high pressure phase of Te precipitates in CdZnTe crystals in a non-destructive way. Also it is shown that the presence of Te precipitates lead to loss of useful signal in the 2.2 – 6 µm wavelength regions and hence are “deleterious” for substrate applications of CdZnTe crystals required for the growth and fabrication of HgCdTe detectors. Chapter 3: The effects of annealing and hydrogenation on the low temperature photoluminescence (PL) spectra of CdZnTe (Zn ~ 4%) crystals are reported in this chapter. It is shown that annealing at 600 oC for 12 hrs under Cd vapors has resulted in the disappearance of both C-A and DAP recombination features (attributed to singly ionized cadmium vacancy acceptors) observed in the 1.5 – 1.6 eV band edge region in the low temperature PL spectra of CdZnTe, confirming the origination of these bands from Cd vacancy defects. The presence of copper impurity has been identified by the appearance of the 1.616 (AoX) eV energy peak attributed to exciton bound to the neutral copper acceptor and the 1.469 eV band attributed to copper acceptor in the donor acceptor pair (DAP) recombinations. It is shown that, only annealing under Cd+Zn vapors at 650 oC for 6 hrs has resulted in the passivation of the 1.469 eV band and the mechanism has been explained invoking the Hume-Rothery rule. Passivation of the 1.469 eV band is significant, since CdZnTe substrate copper contamination was found to degrade HgCdTe epitaxial layer and hence the performance of HgCdTe infrared (IR) detectors. Also it shown that vacuum annealing has resulted in the introduction of a new defect band around 0.85 eV in the low temperature PL spectra of CdZnTe possibly due to the loss of Cd and/or Zn. Further, the effects of hydrogenation in passivating the defect bands observed in the low temperature PL spectra of the control CdZnTe crystals are discussed. Using micro-Raman imaging technique, it is shown that hydrogenation has resulted in the reduction in size and restoration of normal phase for Te precipitates, which otherwise were present under high pressure phase in CdZnTe crystals. It is shown that the net effect of hydrogenation is to improve the quality of CdZnTe crystals at low temperature (50 oC) as compared to the high Cd+Zn annealing temperature (650 oC) whose effect is only to reduce the size of Te precipitates. To further substantiate this an analysis of the temperature dependent resonance micro-Raman spectra recorded with 633 and 488 nm lasers has been made and it is shown that appearance of the multiple orders (up to 4 orders) of the CdTe like LO phonon modes and emergence of the ZnTe like LO phonon mode are clear indications of the improved quality of the hydrogenated CdZnTe crystals. Chapter 4: Manifestation of Fe2+and Fe3+charge states of Fe in undoped CdZnTe (Zn ~ 4 %) crystals grown in quartz crucibles by asymmetrical Bridgemann method and their respective optical and magnetic behaviors have been discussed in this chapter. Fe2+being optically active shows absorption around 2295 cm-1in the low temperature (T = 3 K) FTIR spectra, while Fe3+being magnetically active exhibits coexistence of para and ferromagnetic phases, as identified by low temperature electron spin resonance and supported independently by low temperature SQUID and AC susceptibility measurements. In the paramagnetic phase (TC ~ 4.8 K) the inverse of ac susceptibility follows the Curie-Weiss law. In the ferromagnetic phase (TC ~ 4.8 K) the thermal evolution of magnetization follows the well known Bloch’s T3/2 law. This is further supported by the appearance of hysteresis in the SQUID measurements at 2K below TC. Small coercive field of 10 Oe as estimated in the hysteresis suggests that the magnetic anisotropy is very small in these systems. Chapter 5: In this chapter, details of the indigenously developed laser beam induced current (LBIC) instrumentation have been presented. These include instrumental arrangement of the micro-mechanical system for raster scanning of defects in semicoductors and fabrication details of continuous flow liquid helium cryostat for low temperature LBIC measurements. Preliminary LBIC data recorded using this system have been shown to demonstrate the operability of the system. Chapter 6: This chapter includes a brief write-up summarizing the results and draws the attention for the possible future work. Appendix A: Here C++ programs for LBIC measurements are presented. Appendix B: Here the CAD diagrams for the full cross sectional view of the liquid helium cryostat consisting of “assembly liquid helium cryostat” and “part liquid helium cryostat” are attached.

Doctor of Philosophy / Department of Mechanical and Nuclear Engineering / Douglas S. McGregor / Cadmium Zinc Telluride (CdZnTe) has been used for many applications, such as medical imaging and astrophysics, since its first demonstration as a room temperature operating gamma-ray detector in 1992. The wide band gap, high effective Z-number and high resistivity of CdZnTe make it a good candidate for use as a room temperature operated detector with good absorption efficiency, while maintaining a low bulk leakage current at high electric fields. Nevertheless, the low mobility lifetime products mu tau of holes in CdZnTe makes detectors position sensitive, unless advanced detector designs are employed. Among those designs is the Frisch collar technology which turns the detector into a single carrier device by negating the degrading effects of hole trapping and low mobility. The superiority of the Frisch collar technology over other methods include its inexpensive associated electronics and straight forward fabrication process. The main objective of this research study is to develop a large volume gamma-ray detector with an array of individual CdZnTe Frisch collar gamma-ray spectrometers while still using a single readout. Several goals were to be accomplished prior to the main objective. One goal is to develop a reliable low cost method to fabricate bulk CdZnTe crystals into Frisch collar detectors. Another goal was to investigate the limitations of crystal geometry and the crystal electrical properties to obtain the best spectroscopic performance from CdZnTe Frisch collar detectors. Still another goal was to study all other external parameters such as the collar length, anode to cathode ratio, the insulator thickness and applied voltage on performance of CdZnTe Frisch collar detectors. The final goal was to construct the CdZnTe Frisch collar devices into an array and to show its feasibility of being used for large volume detector.

Tandem solar cells fabricated from thin films provide promise of improved efficiency while keeping the processing costs low. CdSe as top cells are investigated in this work. CIGS has been a standardized process with lab efficiencies reaching 18% [53]. This dissertation focuses on the development of conductive window layer for the development of a high performance, high bandgap solar cell. ZnSe, Cu2-xSe, and ZnSexTe1-x are investigated as viable window layers of the top cell. ZnSe in undoped form forms a good junction with CdSe films, but the Voc from these devices could never exceed the 360mV mark, while the current densities approached 17.5mA/cm2 [61].To improve Voc's, the high contact energy at the ZnSe/Cu interface has to be overcome by replacing Cu with a metal having higher work function or doping the window layer to form a tunneling contact with Copper.Deposition of ZnSe from binary sources in presence of nitrogen plasma resulted in films with proper stoichiometry. However, doping could not be accomplished. ZnTe is easily dopable, and was the next alternative. ZnTe doping in presence of Nitrogen plasma resulted in Zn rich films. Hence doping of the ternary compound ZnSexTe1-x was considered. This work focuses on studying the effects of compositional variation on the conductivity of the ZnSexTe1-x films. ZnSexTe1-x films were doped using Nitrogen. Films were deposited by co-evaporation from ZnTe, ZnSe and Se sources. Te/Se ratio was varied by varying the ZnTe thickness and Se Thickness. Films with Zn/Group VI ratio close to 1 were measured for conductivity using IV measurements. Highest conductivity of 2* 10-8 ohm-cm was obtained at ZnSe, ZnTe, and Se thicknesses of 2000Ã?, 1500Ã?, and 500Ã? respectively. The actual carrier concentration could be concealed by the current limiting Cu contacts. All films with Zn/Group VI ratio close to 1 showed slight conductivity in the 10-10 ohm-cm range. Layered ZnSexTe1-x Films doped with Nitrogen had targeted Zn/Group VI ratio of 1, but with a higher Te content. The films were also slightly conductive, in the 10-10 ohm-cm range. The mechanism limiting the doping in all the films seems to be the same.

Thesis (Ph. D.)--West Virginia University, 2006. / Title from document title page. Document formatted into pages; contains xiv, 141 p. : ill. (some col.). Includes abstract. Includes bibliographical references (p. 135-141).