This thesis focuses on the logical design of binary adders. It covers topics extending from cardinal numbers to carry skip optimization. The conventional adder designs are described in detail, including: carry completion, ripple carry, carry select, carry skip, conditional sum, and carry lookahead. We show that the method of parallel prefix analysis can be used to unify the conventional adder designs under one parameterized model. The parallel prefix model also produces other useful configurations, and can be used with carry operator variations that are associative. Parallel prefix adder parameters include group sizes, tree shape, and device sizes. We also introduce a general algorithm for group size optimization. Code for this algorithm is available on the World Wide Web. Finally, the thesis shows the derivation for some carry operator variations including those originally given by Majerski and Ling. / text

Ultra-low-power circuits are becoming more desirable due to growing portable device markets and they are also becoming more interesting and applicable today in biomedical, pharmacy and sensor networking applications because of the nano-metric scaling and CMOS reliability improvements. In this thesis, three main achievements are presented in ultra-low-power adders. First, a new majority function algorithm for carry and the sum generation is presented. Then with this algorithm and implied new architecture, we achieved a circuit with 75mV supply voltage operation. Last but not least, a 64 bit current-mode majority-function adder based on the new architecture and algorithm is successfully tested at 75mV supply voltage. The circuit consumed 4.5nW or 3.8pJ in one of the worst conditions.

Nos últimos anos, os sistemas integrados em silício (SOCs - Systems-on-Chip) têm se tornado menos imunes a ruído, em decorrência dos ajustes necessários na tecnologia CMOS (Complementary Metal-Oxide-Silicon) para garantir o funcionamento dos transistores com dimensões nanométricas. Dentre tais ajustes, a redução da tensão de alimentação e da tensão de limiar (threshold) tornam os SOCs mais suscetíveis a falhas transientes, principalmente aquelas provocadas pela colisão de partículas energéticas que provêm do espaço e encontram-se presentes na atmosfera terrestre. Quando uma partícula energética de alta energia colide com o dreno de um transistor que está desligado, ela perde energia e produz pares elétron-lacuna livres, resultando em uma trilha de ionização. A ionização pode gerar um pulso transiente de tensão que pode ser interpretado como uma mudança no sinal lógico. Em um circuito combinacional, o pulso pode propagar-se até ser armazenado em um elemento de memória. Tal fenômeno é denominado Single-Event Transient (SET). Como a tendência é que as dimensões dos dispositivos fabricados com tecnologia CMOS continuem reduzindo por mais alguns anos, a ocorrência de SETs em SOCs operando na superfície terrestre tende a aumentar, exigindo a adoção de técnicas de tolerância a falhas no projeto de SOCs. O presente trabalho tem por objetivo avaliar circuitos somadores tolerantes a falhas transientes encontrados na literatura. Duas arquiteturas de somadores foram escolhidas: Ripple Carry Adder (RCA) e Binary Signed Digit Adder (BSDA). O RCA foi escolhido por ser o tipo de somador de menor custo e por isso, amplamente utilizado em SOCs. Já o BSDA foi escolhido porque utiliza o sistema numérico de dígito binário com sinal (Binary Signed Digit – BSD). Por ser um sistema de representação redundante, o uso de BSD facilita a aplicação de técnicas de tolerância a falhas baseadas em redundância de informação. Os somadores protegidos avaliados foram projetados com as seguintes técnicas: Redundância Modular Tripla (Triple Modular Redundancy - TMR) e Recomputação com Entradas e Saídas Invertidas (RESI), no caso do RCA, e codificação 1 de 3 e verificação de paridade, no caso do BSDA. As 9 arquiteturas de somadores foram simuladas no nível elétrico usando o Modelo Tecnológico Preditivo (Predictive Technology Model - PTM) de 45nm e considerando quatro comprimentos de operandos: 4, 8, 16 e 32 bits. Os resultados obtidos permitiram quantificar o número de transistores, o atraso crítico e a potência média consumida por cada arquitetura protegida. Também foram realizadas campanhas de injeção de falhas, por meio de simulações no nível elétrico, para estimar o grau de proteção de cada arquitetura. Os resultados obtidos servem para guiar os projetistas de SOCs na escolha da arquitetura de somador tolerante a falhas mais adequada aos requisitos de cada projeto. / In the past recent years, integrated systems on a chip (Systems-on-chip - SOCs) became less immune to noise due to the adjusts in CMOS technology needed to assure the operation of nanometric transistors. Among such adjusts, the reductions in supply voltage and threshold voltage make SOSs more susceptible to transient faults, mainly those provoked by the collision of charged particles coming from the outer space that are present in the atmosphere. When a heavily energy charged particle hits the drain region of a transistor that is at the off state it produces free electron-hole pairs, resulting in an ionizing track. The ionization may generate a transient voltage pulse that can be interpreted as a change in the logic signal. In a combinational circuit, the pulse may propagate up to the primary outputs and may be captured by the output storage element. Such phenomenon is referred to as Single-Event Transient (SET). Since it is expected that transistor dimensions will continue to reduce in the next technological nodes, the occurrence of SETs at Earth surface will increase and therefore, fault tolerance techniques will become a must in the design of SOSs. The present work targets the evaluation of transient fault-tolerant adders found in the literature. Two adder architectures were chosen: the Ripple-Carry Adder (RCA) and the Binary Signed Digit Adder (BSDA). The RCA was chosen because it is the least expensive and therefore, the most used architecture for SOS design. The BSDA, in turn, was chosen because it uses the Binary Signed Digit (BSD) system. As a redundant number system, the BSD paves the way to the implementation of fault-tolerant adders using information redundancy. The evaluated fault-tolerant adders were implemented by using the following techniques: Triple Module Redundancy (TMR) and Recomputing with Inverted Inputs and Outputs (RESI), in the case of the RCA, and 1 out of 3 coding and parity verification, in the case of the BSDA. A total of 9 adder architectures were simulated at the electric-level using the Predictive Technology Model (PTM) for 45nm in four different bitwidths: 4, 8, 16 and 32. The obtained results allowed for quantifying the number of transistors, critical delay and average power consumption for each fault-tolerant architecture. Fault injection campaigns were also accomplished by means of electric-level simulations to estimate the degree of protection of each architecture. The results obtained in the present work may be used to guide SOS designers in the choice of the fault-tolerant adder architecture that is most likely to satisfy the design requirements.

Significant characteristic of any VLSI design circuit is its power, reliability, operating frequency and implementation cost. Dynamic CMOS designs provide high operating speeds compared to static CMOS designs combined with low silicon area requirement. This thesis describes the design and the optimization of high performance carry select adder. Previous researchers believed that existing CSA designs has reached theoretical speed bound. But, only a considerable portion of hardware resources of traditional adders are used in worst case scenario. Based on this observation our proposed design will improve on theoretical limit. The major scope of this proposed design is to increase the speed of carry generation between intermediate blocks of Carry select Adder (CSA) by introducing fast multiple clock Domino Manchester carry chain (MCC) that generates carry outputs. This design technique will have some advantages compared to pre-existing implementations in operating speed and power delay product. Simulation has been done using GPDK (Generic Process Design Kits) technology using cadence virtuoso. Thus the proposed technique provides advantages over pre-existing techniques in terms of operating speed.

Nos últimos anos, os sistemas integrados em silício (SOCs - Systems-on-Chip) têm se tornado menos imunes a ruído, em decorrência dos ajustes necessários na tecnologia CMOS (Complementary Metal-Oxide-Silicon) para garantir o funcionamento dos transistores com dimensões nanométricas. Dentre tais ajustes, a redução da tensão de alimentação e da tensão de limiar (threshold) tornam os SOCs mais suscetíveis a falhas transientes, principalmente aquelas provocadas pela colisão de partículas energéticas que provêm do espaço e encontram-se presentes na atmosfera terrestre. Quando uma partícula energética de alta energia colide com o dreno de um transistor que está desligado, ela perde energia e produz pares elétron-lacuna livres, resultando em uma trilha de ionização. A ionização pode gerar um pulso transiente de tensão que pode ser interpretado como uma mudança no sinal lógico. Em um circuito combinacional, o pulso pode propagar-se até ser armazenado em um elemento de memória. Tal fenômeno é denominado Single-Event Transient (SET). Como a tendência é que as dimensões dos dispositivos fabricados com tecnologia CMOS continuem reduzindo por mais alguns anos, a ocorrência de SETs em SOCs operando na superfície terrestre tende a aumentar, exigindo a adoção de técnicas de tolerância a falhas no projeto de SOCs. O presente trabalho tem por objetivo avaliar circuitos somadores tolerantes a falhas transientes encontrados na literatura. Duas arquiteturas de somadores foram escolhidas: Ripple Carry Adder (RCA) e Binary Signed Digit Adder (BSDA). O RCA foi escolhido por ser o tipo de somador de menor custo e por isso, amplamente utilizado em SOCs. Já o BSDA foi escolhido porque utiliza o sistema numérico de dígito binário com sinal (Binary Signed Digit – BSD). Por ser um sistema de representação redundante, o uso de BSD facilita a aplicação de técnicas de tolerância a falhas baseadas em redundância de informação. Os somadores protegidos avaliados foram projetados com as seguintes técnicas: Redundância Modular Tripla (Triple Modular Redundancy - TMR) e Recomputação com Entradas e Saídas Invertidas (RESI), no caso do RCA, e codificação 1 de 3 e verificação de paridade, no caso do BSDA. As 9 arquiteturas de somadores foram simuladas no nível elétrico usando o Modelo Tecnológico Preditivo (Predictive Technology Model - PTM) de 45nm e considerando quatro comprimentos de operandos: 4, 8, 16 e 32 bits. Os resultados obtidos permitiram quantificar o número de transistores, o atraso crítico e a potência média consumida por cada arquitetura protegida. Também foram realizadas campanhas de injeção de falhas, por meio de simulações no nível elétrico, para estimar o grau de proteção de cada arquitetura. Os resultados obtidos servem para guiar os projetistas de SOCs na escolha da arquitetura de somador tolerante a falhas mais adequada aos requisitos de cada projeto. / In the past recent years, integrated systems on a chip (Systems-on-chip - SOCs) became less immune to noise due to the adjusts in CMOS technology needed to assure the operation of nanometric transistors. Among such adjusts, the reductions in supply voltage and threshold voltage make SOSs more susceptible to transient faults, mainly those provoked by the collision of charged particles coming from the outer space that are present in the atmosphere. When a heavily energy charged particle hits the drain region of a transistor that is at the off state it produces free electron-hole pairs, resulting in an ionizing track. The ionization may generate a transient voltage pulse that can be interpreted as a change in the logic signal. In a combinational circuit, the pulse may propagate up to the primary outputs and may be captured by the output storage element. Such phenomenon is referred to as Single-Event Transient (SET). Since it is expected that transistor dimensions will continue to reduce in the next technological nodes, the occurrence of SETs at Earth surface will increase and therefore, fault tolerance techniques will become a must in the design of SOSs. The present work targets the evaluation of transient fault-tolerant adders found in the literature. Two adder architectures were chosen: the Ripple-Carry Adder (RCA) and the Binary Signed Digit Adder (BSDA). The RCA was chosen because it is the least expensive and therefore, the most used architecture for SOS design. The BSDA, in turn, was chosen because it uses the Binary Signed Digit (BSD) system. As a redundant number system, the BSD paves the way to the implementation of fault-tolerant adders using information redundancy. The evaluated fault-tolerant adders were implemented by using the following techniques: Triple Module Redundancy (TMR) and Recomputing with Inverted Inputs and Outputs (RESI), in the case of the RCA, and 1 out of 3 coding and parity verification, in the case of the BSDA. A total of 9 adder architectures were simulated at the electric-level using the Predictive Technology Model (PTM) for 45nm in four different bitwidths: 4, 8, 16 and 32. The obtained results allowed for quantifying the number of transistors, critical delay and average power consumption for each fault-tolerant architecture. Fault injection campaigns were also accomplished by means of electric-level simulations to estimate the degree of protection of each architecture. The results obtained in the present work may be used to guide SOS designers in the choice of the fault-tolerant adder architecture that is most likely to satisfy the design requirements.

Nos últimos anos, os sistemas integrados em silício (SOCs - Systems-on-Chip) têm se tornado menos imunes a ruído, em decorrência dos ajustes necessários na tecnologia CMOS (Complementary Metal-Oxide-Silicon) para garantir o funcionamento dos transistores com dimensões nanométricas. Dentre tais ajustes, a redução da tensão de alimentação e da tensão de limiar (threshold) tornam os SOCs mais suscetíveis a falhas transientes, principalmente aquelas provocadas pela colisão de partículas energéticas que provêm do espaço e encontram-se presentes na atmosfera terrestre. Quando uma partícula energética de alta energia colide com o dreno de um transistor que está desligado, ela perde energia e produz pares elétron-lacuna livres, resultando em uma trilha de ionização. A ionização pode gerar um pulso transiente de tensão que pode ser interpretado como uma mudança no sinal lógico. Em um circuito combinacional, o pulso pode propagar-se até ser armazenado em um elemento de memória. Tal fenômeno é denominado Single-Event Transient (SET). Como a tendência é que as dimensões dos dispositivos fabricados com tecnologia CMOS continuem reduzindo por mais alguns anos, a ocorrência de SETs em SOCs operando na superfície terrestre tende a aumentar, exigindo a adoção de técnicas de tolerância a falhas no projeto de SOCs. O presente trabalho tem por objetivo avaliar circuitos somadores tolerantes a falhas transientes encontrados na literatura. Duas arquiteturas de somadores foram escolhidas: Ripple Carry Adder (RCA) e Binary Signed Digit Adder (BSDA). O RCA foi escolhido por ser o tipo de somador de menor custo e por isso, amplamente utilizado em SOCs. Já o BSDA foi escolhido porque utiliza o sistema numérico de dígito binário com sinal (Binary Signed Digit – BSD). Por ser um sistema de representação redundante, o uso de BSD facilita a aplicação de técnicas de tolerância a falhas baseadas em redundância de informação. Os somadores protegidos avaliados foram projetados com as seguintes técnicas: Redundância Modular Tripla (Triple Modular Redundancy - TMR) e Recomputação com Entradas e Saídas Invertidas (RESI), no caso do RCA, e codificação 1 de 3 e verificação de paridade, no caso do BSDA. As 9 arquiteturas de somadores foram simuladas no nível elétrico usando o Modelo Tecnológico Preditivo (Predictive Technology Model - PTM) de 45nm e considerando quatro comprimentos de operandos: 4, 8, 16 e 32 bits. Os resultados obtidos permitiram quantificar o número de transistores, o atraso crítico e a potência média consumida por cada arquitetura protegida. Também foram realizadas campanhas de injeção de falhas, por meio de simulações no nível elétrico, para estimar o grau de proteção de cada arquitetura. Os resultados obtidos servem para guiar os projetistas de SOCs na escolha da arquitetura de somador tolerante a falhas mais adequada aos requisitos de cada projeto. / In the past recent years, integrated systems on a chip (Systems-on-chip - SOCs) became less immune to noise due to the adjusts in CMOS technology needed to assure the operation of nanometric transistors. Among such adjusts, the reductions in supply voltage and threshold voltage make SOSs more susceptible to transient faults, mainly those provoked by the collision of charged particles coming from the outer space that are present in the atmosphere. When a heavily energy charged particle hits the drain region of a transistor that is at the off state it produces free electron-hole pairs, resulting in an ionizing track. The ionization may generate a transient voltage pulse that can be interpreted as a change in the logic signal. In a combinational circuit, the pulse may propagate up to the primary outputs and may be captured by the output storage element. Such phenomenon is referred to as Single-Event Transient (SET). Since it is expected that transistor dimensions will continue to reduce in the next technological nodes, the occurrence of SETs at Earth surface will increase and therefore, fault tolerance techniques will become a must in the design of SOSs. The present work targets the evaluation of transient fault-tolerant adders found in the literature. Two adder architectures were chosen: the Ripple-Carry Adder (RCA) and the Binary Signed Digit Adder (BSDA). The RCA was chosen because it is the least expensive and therefore, the most used architecture for SOS design. The BSDA, in turn, was chosen because it uses the Binary Signed Digit (BSD) system. As a redundant number system, the BSD paves the way to the implementation of fault-tolerant adders using information redundancy. The evaluated fault-tolerant adders were implemented by using the following techniques: Triple Module Redundancy (TMR) and Recomputing with Inverted Inputs and Outputs (RESI), in the case of the RCA, and 1 out of 3 coding and parity verification, in the case of the BSDA. A total of 9 adder architectures were simulated at the electric-level using the Predictive Technology Model (PTM) for 45nm in four different bitwidths: 4, 8, 16 and 32. The obtained results allowed for quantifying the number of transistors, critical delay and average power consumption for each fault-tolerant architecture. Fault injection campaigns were also accomplished by means of electric-level simulations to estimate the degree of protection of each architecture. The results obtained in the present work may be used to guide SOS designers in the choice of the fault-tolerant adder architecture that is most likely to satisfy the design requirements.

The notion of mechanical computation has been revived in the past few years, with the advances of nanofabrication techniques. Although electromechanical devices are inherently slow, they offer zero or very low off-state current, which reduces the overall power consumption compared to the fast complementary-metal-oxide-semiconductor (CMOS) counterparts. This energy efficiency feature is the most crucial requirement for most of the stand-alone battery-operated gadgets, biomedical devices, and the internet of things (IoT) applications, which do not require the fast processing speeds offered by the mainstream CMOS technology. In particular, using Micro-Electro-Mechanical (MEM) resonators in mechanical computing has drawn the attention of the research community and the industry in the last decade as this technology offers low power consumption, reduced circuit complexity compared to conventional CMOS designs, run-time re- programmability and high reliability due to the contactless mode of operation compared to other MEM switches such as micro-relays. In this thesis, we introduce digital circuit design techniques tailored for clamped-clamped beam MEM resonators. The main operation mechanism of these circuit blocks is based on fine-tuning of the resonance frequency of the micro-resonator beam, and the logic function performed by the devices is mainly determined by factors such as input/output terminal arrangement, signal type, resonator operation regime (linear/non-linear), and the operation frequency. These proposed circuits include the major building blocks of any microprocessor such as logic gates, a full adder which is a key block in any arithmetic and logic operation units (ALU), and I/O interface units, including digital to analog (DAC) and analog to digital (ADC) data converters. All proposed designs were first simulated using a finite element software and then the results were experimentally verified. Important aspects such as energy per operation, speed, and circuit complexity are evaluated and compared to CMOS counterparts. In all applications, we show that by proper scaling of the resonator’s dimensions, MHz operation speeds and energy consumption in the range of femto-joules per logic operation are attainable. Finally, we discuss some of the challenges in using MEM resonators in digital circuit design at the device level and circuit level and propose solutions to tackle some of them.

The constant endeavor to measure and record neural signals from the human brain and anticipate the results to figure out the mechanism which governs the functionality of our brain and its true behavior is the major driving force behind this thesis. Neural recording integrated circuits (ICs) are often inserted directly into the brain, with a set of probes for sensing these action potentials (and local field potentials), and appropriate circuitry for amplifying the neural signals (Pre-Amp), sampling and converting the analog signals to digital (ADC) and transmitting the resulting digital signal (Transmitter) to a nearby reader instrument (Receiver). Action potentials are comprised of signals typically looking like spikes having a peak voltage of 1-2mV, whereas local field potentials are continuous signals generally having an amplitude of around 100-200μV often with a dc component of several mV. Fourier analysis of action potentials and local field potentials show frequency components in the range of 0.1 Hz up to 10kHz. This thesis proposes a low-power 5-bit algorithmic A/D converter to feed a 5-stage serial shift register for use in sampling and converting a presumed neuron action potential signal at the rate of 20k samples/sec. In addition to that, a low-power preamp with at least 40dB gain and a low-pass type spectrum having a unity-gain frequency of at least 20MHz is used to amplify the input signal. The algorithmic A/D converter includes a sample-and-hold circuit for sampling the analog action potential spike at a rate of 20kHz. The ADC utilizes an X2 gain circuit based on a capacitive redistribution technique. A less complex circuit in terms of dependency on Capacitor sizing and their non-ideal effects is the key factor for selecting this type of ADC which can be used for neural recording applications. All the circuits are designed based on the IBM/Global Foundries 8HP 130nm BiCMOS technology.

No description available.

No description available.