It has been known that a significant part of the thermal budget of an electronic package is occupied by the thermal interface material which is used to join different materials. Research in reducing this resistance through the use of vertically aligned multiwall carbon nanotube based thermal interface materials is presented. Transferred arrays anchored to substrates using thermal conductive adhesive and solder was analyzed through a steady-state infrared measurement technique. The thermal performance of the arrays as characterized through the measurement system is shown to be comparable and better than currently available interface material alternatives. Furthermore, a developed parametric model of the thermal conductive adhesive anchoring scheme demonstrates even greater potential for improved thermal resistances. Additionally, a developed transient infrared measurement system based on single point high speed temperature measurements and full temperature mappings is shown to give increased information into the thermophysical properties of a multilayer sample than other steady-state techniques.

The electrodynamic interaction of Ganymede’s mini-magnetosphere with Jupiter’s corotating magnetospheric plasma has been shown to give rise to strong current systems closing through the moon and its ionosphere as well as through its magnetopause and magnetotail current sheet. This interaction is strongly evidenced by the presence of aurorae at Ganymede and of a bright Ganymede footprint on Jupiter’s ionosphere. This footprint is located equatorward of the main auroral emissions, at the magnetic longitude of the field line threading Ganymede. The brightness of Ganymede’s auroral footprint at Jupiter along with its latitudinal position have been shown to depend on the position of Ganymede relative to the center of the Jovian plasma sheet. Additionally, observations using the Hubble Space Telescope showed that Ganymede’s auroral footprint brightness is characterized by variations of three different timescales: 5 hours, 10-40 minutes, and ~100 seconds. The goal of the present study is to examine the relationship between the longest and the shortest timescale periodicities of Ganymede’s auroral footprint brightness and the local processes occurring at Ganymede. This is done by coupling a specifically developed brightness model to a three-dimensional multifluid model which tracks the energies and fluxes of the various sources of charged particles that precipitate into Ganymede’s ionosphere to generate the aurora. It is shown that the predicted auroral brightnesses and morphologies agree well with observations of Ganymede’s aurora from the Hubble Space Telescope. Our results also suggest the presence of short- and long-period variabilities in the auroral emissions at Ganymede due to magnetic reconnections on the magnetopause and in the magnetotail, and support the hypothesis of a correlation between the variability of Ganymede’s auroral footprint on Jupiter’s ionosphere and the variability in the brightness and morphology of the aurora at Ganymede. Finally, the modeled aurora at Ganymede reveals that the periodicities in the morphology and brightness of the auroral emissions are produced by two different dynamic reconnection mechanisms. The Jovian flow facing side aurora is generated by electrons sourced in the Jovian plasma and penetrating into Ganymede’s ionosphere through the cusps above the separatrix region. In this case, the reconnection processes responsible for the auroral emissions occur on Ganymede’s magnetopause between the Jovian magnetic field lines and the open magnetic field lines threading Ganymede’s Polar Regions. As for the magnetotail side aurora, it is generated by electrons originating from Ganymede’s magnetospheric flow. These electrons are accelerated along closed magnetic field lines created by magnetic reconnection in Ganymede’s magnetotail, and precipitate into Ganymede’s ionosphere at much lower latitudes, below the separatrix region.

Thesis (M.B.A.)--North-West University, Potchefstroom Campus, 2009.

Thesis (M.B.A.)--North-West University, Potchefstroom Campus, 2009.

The extraordinary properties of the single wall carbon nanotubes (SWCNTs) have stimulated an enormous amount of research towards the realization of SWCNT-based products for different applications ranging form nanocomposites to nanoelectronics. Their high charge mobility, exceedingly good current-carrying capacities and ability to be either semiconducting or metallic render them ideal building blocks for nanoelectronics. For nanoelectronic applications, either individual or parallel aligned SWCNTs are advantageous. Moreover, closely packed arrays of parallel SWCNTs are required in order to sustain the relatively large currents found in high frequency devices. Two key areas still require further development before the realization of large-scale nanoelectronics. They are the reproducible control of the nanotubes spatial position/orientation and chiral management. In terms of nanotube orientation, different techniques have been demonstrated for the fabrication of horizontally aligned SWCNTs with either post synthesis routes (e.g. dielectrophoresis and Langmuir-Blodgett approach) or direct growth (e.g. chemical vapor deposition (CVD)). The low temperature of the production process, allowing the formation of aligned nanotubes on pretty much any substrate, is the main advantage of the post synthesis routes, while the poor levels of reproducibility and spatial control, and the limited quality of the aligned tubes due to the inherently required process steps are limitations. The simplicity, up-scalability, along with the reproducible growth of clean high quality SWCNTs with well-controlled spatial, orientation and length, make CVD the most promising for producing dense horizontally well-aligned SWCNTs. These CVD techniques suffer some drawbacks, namely, that because they are synthesized using catalyst particles (metals or non-metals) the catalyst material can contaminate the tubes and affect their intrinsic properties. Thus, the catalyst-free synthesis of aligned SWNT is very desirable. This thesis comprises detailed and systematic experimental investigations in to the fabrication of horizontally aligned SWCNTs using both post growth (Dielectrophoresis) and direct growth (CVD) methods. Both catalyst-assisted and catalyst-free SWCNTs are synthesized by CVD. While metallic nanoparticles nucleate and grow SWCNTs, opened and activated fullerene structures are used for all carbon catalyst-free growth of single wall and double wall carbon nanotubes. The systematic studies allow for a detailed understanding of the growth mechanisms of catalyst and catalyst-free grown SWCNTs to be elucidated. The data significantly advances our understanding of horizontally aligned carbon nanotubes by both post synthesis alignment as well as directly as-synthesized routes. Indeed, the knowledge enables such tubes to be grown in high yield and with a high degree of special control. It is shown, for the first time, how one can grow horizontally aligned carbon nanotubes in crossbar configurations in a single step and with bespoke crossing angles. In addition, the transport properties of the aligned tubes at room temperature are also investigated through the fabrication of devices based on these tubes. / Die außergewöhnlichen Eigenschaften von einwandigen Kohlenstoffnanoröhren (engl. single wall carbon nanotubes, SWCNTs) haben bemerkenswerte Forschungsaktivitäten zur Verwirklichung von auf SWCNTs basierenden Anwendungen für verschiedene Bereiche, die von Nanokompositen bis hin zur Nanoelektronik reichen, stimuliert. Ihre hohe Ladungsträgermobilität und die außerordentlichen hohen Ladungsdichten, die in SWCNTs erreicht werden können sowie ihre Eigenschaft, entweder halbleitend oder metallisch zu sein, machen sie zu idealen Konstituenten von nanoelektronischen Schaltkreisen. Für Anwendungen in der Nanoelektronik sind entweder einzelne oder parallel angeordnete SWCNTs vorteilhaft. Darüber hinaus sind dicht gepackte Anordnungen von SWCNTs erforderlich, um die relativ hohen Ströme in Hochfrequenzbauelementen zu transportieren. Für eine erfolgreiche Realisierung von großskaligen nanoelektronischen Bauteilen, die auf SWCNTs basieren, sind noch zwei enorm wichtige Kernprobleme zu lösen, die weitere Forschungsanstrengungen erfordern: die reproduzierbare und verlässliche Kontrolle der räumlichen Positionierung und Orientierung der Nanoröhren sowie die Kontrolle der Chiralität der einzelnen SWCNTs. Hinsichtlich der Orientierung der Nanoröhren kann die horizontal parallele Ausrichtung von SWCNTs mit verschiedenen Techniken erreicht werden. Diese setzen entweder nach dem eigentlichen Wachstum der Röhren ein (Post-Synthese-Methoden wie z.B. Dielektrophorese oder Langmuir-Blodgett-Techniken) oder erreichen direkt während des Wachstums (z.B. durch Chemical-Vapor-Deposition-Methoden (CVD)) die parallele Anordnung. Durch die niedrigen Prozesstemperaturen, die während des Herstellungsprozesses erforderlich sind, erlauben die nach der eigentlichen Synthese stattfindenden Ausrichtungsmethoden die parallele Anordnung von Nanoröhren auf nahezu jedem Substrat, jedoch stellen die geringe Reproduzierbarkeit dieser Prozesse, die schwierige Kontrollierbarkeit der räumlichen Anordnung und die limitierte Qualität der ausgerichteten Röhren aufgrund der erforderlichen Prozessschritte natürliche Beschränkungen dieser Techniken dar. Die einfache Durchführung und ihre Skalierbarkeit, zusammen mit dem reproduzierbaren Wachstum qualitativ sehr hochwertiger SWCNTs mit hoher Kontrolle von räumlicher Anordnung, Orientierung und Länge machen die CVD-Methode zur erfolgversprechendsten Technik für die Herstellung von dichtgepackten hochparallelen horizontalen Anordnungen von SWCNTs. Diese CVD-Ansätze weisen jedoch auch einige Nachteile auf, die in den bei der Synthese verwendeten Katalysatorpartikeln (metallisch oder nicht-metallisch) begründet liegen, da das Katalysatormaterial die Röhren kontaminieren und dadurch ihre intrinsischen Eigenschaften beeinflussen kann. Daher ist eine katalysatorfreie Synthesemethode für ausgerichtete SWCNTs ein höchst erstrebenswertes Ziel. Die vorliegende Arbeit beschreibt detaillierte und systematische experimentelle Untersuchungen zur Herstellung von horizontalen, parallel ausgerichteten Anordnungen von SWCNTs unter Verwendung von Methoden, die sowohl nach dem eigentlichen Wachstum der Nanoröhren (Dielektrophorese) als auch während des Wachstums ansetzen (CVD). Bei den CVD-Methoden werden sowohl solche, die auf der Verwendung von Katalysatoren basieren, als auch katalysatorfreie Techniken verwendet. Während metallische Nanopartikel den Ausgangspunkt für das Wachstum von SWCNTs darstellen, werden geöffnete und aktivierte Fullerenstrukturen verwendet, um das katalysatorfreie Wachstum von reinen ein- oder mehrwandigen Nanoröhren zu erreichen. Die systematischen Untersuchungen ermöglichen ein tiefgehendes Verständnis der Wachstumsmechanismen von SWCNTs, die unter Verwendung von Katalysatoren oder katalysatorfrei erzeugt synthetisiert wurden. Die erzielten Ergebnisse erhöhen in einem hohen Maß das Verständnis der Herstellung von horizontal parallel angeordneten Nanoröhren, die durch Post-Synthese-Methoden oder direkt während des Wachstumsprozesses ausgerichtet wurden. Die erzielten Einsichten erlauben die Herstellung solcher Strukturen mit hoher Ausbeute und mit einem hohen Maß an räumlicher Kontrolle der Anordnung. Zum ersten Male kann ein Verfahren präsentiert werden, mit dem horizontal parallel angeordnete Nanoröhren in gekreuzten Strukturen mit wohldefinierten Kreuzungswinkeln hergestellt werden können. Zusätzlich werden die Transporteigenschaften von parallel ausgerichteten Nanoröhren bei Raumtemperatur, durch die Herstellung von auf den dargestellten Strukturen basierenden Bauelementen, untersucht.

Since the discovery of the high temperature superconductor YBa2Cu3O7-δ (YBCO), with transition temperature (Tc = 77 K), above liquid nitrogen point in 1987 many research projects have been dedicated to enhancing the high field performance of this material for practical applications. The 2nd generation YBCO-based coated conductors are believed to be the most promising approach for commercial applications including power transmission, motors, generators, and high field magnets. With the advances of nanotechnologies, different nanoengineering methods have been demonstrated to enhance the performance of YBCO thin films, include doping with 0-dimensional (0-D) self-assembled nanoparticles, 1-dimensional (1-D) nanorods, and 2-dimensional (2-D) nanolayers. Furthermore, dopants with ferromagnetic properties are also reported to provide enhanced pinning effects by Lorentz force, especially under high-applied magnetic fields. The principle of these methods is to generate high-density defects at the heterogeneous interfaces as artificial pinning centers in an effort to improve the flux-pinning properties. The morphology and dimensions of the nanoinclusions play an important role in pining enhancement. Optimized pinning structures are likely to be located at energetically favorable vortex cores, which form a triangular lattice with dimensions close to the YBCO coherence length ξ (ξab ~ 4 nm; ξc ~ 0.5 nm at 77 K.) However, it is challenging to achieve small dimensional nanodopants in the vapor deposited YBCO thin films. The purpose of this research is to utilize nanoengineering methods to produce optimized pinning structure in YBCO thin films. In this thesis, we systematically study the effects of different nanoinclusions on the flux-pinning properties of YBCO thin films. The 0-D ferromagnetic Fe2O3 and CoFe2O4 nanoparticles, 2-D CeO2 multilayers, and tunable vertically aligned nanocomposites (VAN) of (Fe2O3)x:(CeO2)1-x and (CoFe2O4)x:(CeO2)1-x systems are introduced into the YBCO matrix as artificial pinning centers. Results suggest that all nanoinclusions showed significant enhancement in the superconducting properties of YBCO. The ferromagnetic pinning centers dominate at high field and low temperature regimes, however, the defect pinning centers dominate at low field and high temperature regimes. The uniquely arranged VAN structure of alternating magnetic and non-magnetic nanophases, which incorporates both high defect density and tunable distribution of magnetic dopants, is believed to be an ideal solution for flux-pinning enhancement.

Thesis (M.A. in Security Studies (South Asia))--Naval Postgraduate School, March 2008. / Thesis Advisor(s): Knopf, Jeffrey W. ; Lavoy, Peter R. "March 2008." Description based on title screen as viewed on May 16, 2008. Includes bibliographical references (p. 91-103). Also available in print.

We use electric and magnetic field data from MMS spacecraft between 2016 and 2017 tostatistically investigate earthward propagating plasma flow bursts and field-aligned currents(FACs) inside the plasma sheet of the geomagnetic tail. We observe that the occurrence rateof flow burst peaks around the midnight region with decreasing trend towards Earth and theplasma sheet flanks. Further, we distinguish between long and short FACs. Long FACs laston average 6 sec and have a magnitude of 5-20 nA/m 2 . Short FACs last on average 10 timesshorter and have an magnitude of 10-50 nA/m 2 . Both, long and short FACs occur on averageone time per flow burst, on minimum 0 times and on maximum 4 times per flow burst. Intotal, 43 % of the observed FACs are located in a flow burst, 40 % before and 17 % right after aflow burst.

In this thesis work, novel planar nanodiodes (PNDs) using an amorphous indium-gallium-zinc oxide (IGZO) film as the active layer have been electrically characterised for the first time. Simulation techniques and experimental methods, such as e-beam lithography (EBL) and nanoimprint lithography (NIL), have been explored for these devices. In addition, a novel approach was realized that produced self-aligned contacts for the nanostructured devices. A preliminary parameter space for experimentation of the PNDs was ascertained by simulating the devices using a technology computer aided design (TCAD) simulator. In this study Silvaco’s ATLAS default IGZO material system was adopted. These simulations showed device performance to be heavily dependent on the carrier concentration of the film, owing to the high leakage current during the off-state of device operation. Furthermore, device geometry had a significant influence on the device’s electrical response. Channel width, length and trench width were all examined. Experimental characterisation of PNDs were attained by fabricating devices using EBL. These devices are the first to exhbit diode-like DC electrical response from an IGZO-based PND. Full current rectification was obtained with a rectification ratio of 10^4 for devices with a long, narrow channel with a width of 50nm and a length of 4μm. This particular device geometry had a turn-on voltage, Von, of 2.2V and did not breakdown within the −10V bias range tested. An output drive current of 0.1μA at 10V was obtained by the single PND device. It was also demonstrated that by increasing the channel width, Von could be reduced; however, rectification also diminished. It is reasoned that the exposed IGZO surface was subject to contamination from the ambient which changed the device’s electrical response after 17 days. An ultraviolet NIL (UV-NIL) technique was developed to produce the PNDs. This fabrication method offers a suitable route towards high-volume manufacture of these nanodevices, which is critical for them to be incorporated into a low-cost RF energy harvester. A novel NIL process was established in which the contact pads were self-aligned to within ~ 200nm of the channel by patterning both metal and semiconductor layers with a single imprint. DC electrical characterisation of the imprinted PNDs produced high rectifications ratios at a lower Von. The greater number of devices tested allowed a coarse parameter space for channel width and length to determined. PNDs with a channel aspect ratio (length divided by width) of more than 20 exhibited the greatest DC rectification of 10^4. An alumina capping layer was found to eliminate hysteresis in the electrical response; however, the greater permittivity value had no noticeable effect on device performance. Finally, a large-signal RF analysis is carried out on a device which suggest no deterioration in device perfromance up to at least 1GHz.

京都大学 / 0048 / 新制・課程博士 / 博士(理学) / 甲第22875号 / 理博第4641号 / 新制||理||1667(附属図書館) / 京都大学大学院理学研究科地球惑星科学専攻 / (主査)教授 田口 聡, 教授 松岡 彩子, 教授 橋口 浩之 / 学位規則第4条第1項該当 / Doctor of Science / Kyoto University / DGAM