The bacterial RNA binding protein Hfq is a key component for bacterial sRNA mediated riboregulation of mRNA expression. A kinetic and thermodynamic analysis of Hfq binding to its sRNA targets DsrA, RprA, and OxyS, and to its mRNA target rpoS was carried out. The ability of Hfq to significantly enhance the stability of the DsrA-rpoS and RprA-rpoS complex was demonstrated, and the entire untranslated leader region of rpoS was shown to be important for Hfq binding and in Hfq facilitated sRNA-mRNA duplex formation. Hfq was not shown to enhance OxyS binding to rpoS. DsrA and OxyS were shown to bind mostly to the proximal surface region of Hfq, while RprA bound to both proximal and distal surface regions. The rpoS leader region was shown to possess at least two distinct Hfq binding sites, with one site binding the proximal region and the other to the distal region of Hfq. These sites were shown to be important for Hfq to stimulate DsrA-rpoS binding. The outer-circumference region and the C-terminal tail of Hfq does not play a major role in binding DsrA, RprA, OxyS and rpoS, and in stimulating DsrA-rpoS binding. Evidence was obtained implicating Hfq to bind DsrA, RprA, OxyS, and oligo rA18 in a 1:1 protein to RNA stoichiometry. Binding properties of Hfq to E. coli genomic DNA were examined. Double stranded DNA was shown to bind mostly on the distal surface region and the C-terminal tail of Hfq with an affinity 10 fold less than Hfq targeted RNA. Single stranded DNA binds Hfq more tightly than double stranded DNA and binding seems to be sequence specific. Evidence indicates Hfq binds certain sequences of the E. coli genome.

Electromagnetic radiation in the frequency range between about 100 GHz and 5 THz can be used for spectroscopy and microscopy, but it is also promising for security screening and even wireless communication. In the present thesis a planar photoconducting large-area THz radiation source is presented. The device exhibits outstanding properties, in particular high THz field strength and generation efficiency and large spectral bandwidth with short THz pulse length. The THz emission is based on acceleration and deceleration of photoexcited carriers in semiconductor substrates. A metallic interdigitated structure at the surface of semi-insulating GaAs provides the electrodes of an Auston switch. In a biased structure photoexcited charge carriers are accelerated. Hence electromagnetic waves are emitted. An appropriately structured second metallization, electrically isolated from the electrodes, prevents destructive interference of the emitted waves. The structure investigated here combines several advantages of different conventional photoconducting THz sources. First, it provides high electric acceleration fields at moderate voltages owing to the small electrode separation. Second, the large active area in the mm2 range allows excitation by large optical powers of some mW. Optical excitation with near-infrared femtosecond lasers is possible with repetition rates in the GHz range. The presented results point out the excellent characteristics regarding the emitted THz field strength, average power, spectral properties, and easy handling of the interdigitated structure in comparison to various conventional emitter structures. Various modifications of the semiconductor substrate and the optimum excitation conditions were investigated. In the second part of this thesis the dynamic conductivity of GaAs/AlxGa1-xAs superlattices in an applied static electric field was investigated with time-resolved THz spectroscopy. The original goal was to explore whether the predicted effect of gain of electromagnetic radiation at THz frequencies is present in such structures. Superlattice samples were grown according to the experimental requirements, which include high specific resistance and sufficient THz transparency. The characterization of the superlattices by Fourier transform infrared spectroscopy and photoluminescence spectroscopy confirms the pronounced miniband properties of the bandstructure. Furthermore indications of Bloch oscillations were found by transport measurements. However, we could not measure a change of the dynamic conductivity when the electric field was toggled. Specific reasons for this and related experiments of other groups are discussed. / Elektromagnetische Strahlung im Frequenzbereich zwischen etwa 100 GHz und 5 THz wird für verschiedene Anwendungen wie Spektroskopie und Mikroskopie genutzt, kann aber auch für Sicherheitstechnik oder sogar Datenübertragung interessant sein. In der hier vorgestellten Forschungsarbeit wird eine großflächige fotoleitende THz-Strahlungsquelle beschrieben, die sich durch eine große THz-Feldstärke und große spektrale Bandbreite auszeichnet. Die THz-Emission basiert auf der Beschleunigung und Verzögerung fotogenerierter Ladungen in Halbleitersubstraten. Eine metallische Interdigitalstruktur auf der Oberfläche von semi-isolierendem GaAs bildet die Elektroden eines Fotoschalters. Ist an diese Struktur eine Spannung angeschlossen, werden optisch generierte Ladungsträger beschleunigt und strahlen elektromagnetische Wellen ab. Eine geeignet strukturierte und isolierte zweite Metallisierung verhindert destruktive Interferenzen der abgestrahlten Wellen. Die vorgeschlagene Struktur vereinigt dabei die Vorteile verschiedener herkömmlicher fotoleitender THz-Quellen. Einerseits ermöglicht der kleine Elektrodenabstand große elektrische Felder zur Beschleunigung fotogenerierter Ladungen schon bei moderaten Spannungen. Andererseits kann die große aktive Fläche von einigen mm2 mit großen optischen Leistungen im Bereich einiger mW angeregt werden. Die optische Anregung mit Nahinfrarot-Femtosekunden- Lasern kann mit Wiederholraten bis in den GHz-Bereich geschehen. Bedingt durch die Eigenschaften der Anregungspulse entstehen kurze spektral breite THz-Pulse. Die vorliegenden Ergebnisse verdeutlichen die hervorragenden Eigenschaften der Interdigitalstruktur im Vergleich zu verschiedenen herkömmlichen Geometrien bezüglich der Feldstärke der abgestrahlten Wellen, der mittleren Leistung und der spektralen Eigenschaften. Dabei ist die Struktur sehr einfach zu handhaben. Es wurden verschiedene Modifikationen des Substrates und die optimalen Bedingungen der optischen Anregung untersucht. Der zweite Teil dieser Arbeit behandelt die Erforschung der dynamische Leitfähigkeit von GaAs/AlxGa1-xAs-Übergittern in Abhängigkeit von einem elektrischen Feld mit Hilfe der zeitaufgelösten THz-Spektroskopie. Es sollte geklärt werden, ob der vorhergesagte Effekt der Verstärkung elektro-magnetischer Strahlung in solchen Strukturen möglich ist. Dazu wurden Übergitterproben gemäß den experimentellen Anforderungen hergestellt. Zu den Vorgaben gehört ein hoher spezifischer Widerstand und ausreichende Transparenz im THz-Bereich. Die Charakterisierung der Übergitter mit Fotolumineszenz- und Fourier-Transformations-IR-Spektroskopie bestätigte die ausgeprägten Minibandeigenschaften der Bandstruktur. Hinweise auf Bloch-Oszillationen wurden durch Ladungstransportmessungen gefunden. Dennoch war eine Änderung der dynamischen Leitfähigkeit beim Schalten des elektrischen Feldes nicht messbar. Gründe dafür und ähnliche Experimente anderer Gruppen werden diskutiert.

Thesis (Ph. D.)--University of Missouri--Columbia, 2001. / "August 2001." Typescript. Vita. Includes bibliographical references (leaves 135-149). Also available on the Internet.

Ph.D.

Zugl.: Bielefeld, Univ., Diss., 2008

While a number of PEGylated proteins have been studied for injectable applications and reviewers have used this data to speculate possible oral delivery improvements, a detailed investigation of PEGylated insulin for oral delivery and the development of an optimized pH-sensitive carrier for PEGylated insulin conjugates had yet to be accomplished. In order to proceed with oral delivery study, improvements in yield, with respect to previous PEGylation methods were necessary to enable the completion of high throughput drug delivery studies. Subsequently, a reaction scheme for the covalent attachment of PEG to insulin using nitrophenyl carbonate-PEG was developed. It was demonstrated that this reaction occurred at a 1:1 ratio and was site specific at the B29Lys position. A P(MAA-g-EG) hydrogel carrier was developed to optimize loading and release behavior for PEGylated insulin. It was demonstrated that the density and length of polymer grafts affected both loading and release behavior of PEGylated insulin. The best performing grafted polymers had a 3:1 methacrylic acid: ethylene glycol (MAA:EG) ratio and achieved loading efficiencies from 96% to nearly 100%. With respect to release, polymer particles containing fewer, but longer grafts shown to release faster than polymers with shorter grafts with the same MAA:EG ratio. Finally, the effects of PEGylation on intestinal absorption was investigated using an intestinal epithelial model as well as a rat model. It was demonstrated that PEGylated insulin in the presence of P(MAA-g-EG) microparticles did not significantly alter the tight junctions over unmodified insulin. However, the conjugate permeabilities across the membrane were reduced. The pharmacological availability (PA) was then verified by injecting the insulin conjugates subcutaneously in fasted Sprague-Dawley rats. It was determined that PEG 1000 insulin (1KPI) had a PA roughly equivalent to insulin, while it was reduced by 59% for 2KPI and by 81% for 5KPI. The effectiveness of utilizing PEGylated insulin as an oral drug delivery candidate was evaluated with a closed loop intestinal study, in which PEGylated insulin or insulin in solution was delivered directly to the jejunum. It was shown that 1KPI and insulin performed identically; with a pharmacological availability of 0.56%. 2KPI, however improved the pharmacological availability of insulin by 2.8 times. These results demonstrate that PEGylation holds promise for improving the oral delivery of proteins. / text

The impetus of unsustainable consumption coupled with major environmental concerns has renewed our society's investment in new energy production methods. Solar energy is the poster child of clean, renewable energy. Its favorable environmental attributes have greatly enhanced demand resulting in a spur of development and innovation. Photovoltaics, which convert light directly into usable electrical energy, have the potential to transform future energy production. The benefit of direct conversion is nearly maintenance free operation enabling deployment directly within urban centers. The greatest challenge for photovoltaics is competing economically with current energy production methods. Lowering the cost of photovoltaics, specifically through increasing the conversion efficiency of the active absorbing layer, may enable the invisible hand to bypass bureaucracy. To accomplish the ultimate goal of increased efficiency and lowered cost, it is essential to develop new material systems that provide enhanced output or lowered cost with respect to current technologies. However, new materials require new understanding of the physical principles governing device operation. It is my hope that elucidating the dynamics and charge transfer mechanisms in novel photovoltaic material systems will lead to enhanced design principles and improved material selection. Presented is the investigation of electron dynamics in two materials systems that show great promise as active absorbers for photovoltaic applications: inorganic semiconductor quantum dots and organic semiconductors. Common to both materials is the strong Coulomb interaction due to quantum confinement in the former and the low dielectric constant in the latter. The perceived enhancement in Coulomb interaction in quantum dots is believed to result in efficient multiexciton generation (MEG), while discretization of electronic states is proposed to slow hot carrier cooling. Time-resolved two-photon photoemission (TR2PPE) is utilized to directly map out the hot electron cooling and multiplication dynamics in PbSe quantum dots. Hot electron cooling is found to proceed on ultrafast time scales (< 2ps) and carrier multiplication proceeds through an inefficient bulk-like interband scattering. In organic semiconductors, the strong Coulomb interaction leads to bound electron-hole pairs called excitons. TR2PPE is used to monitor the separation of excitons at the model CuPc/C₆₀ interface. Exciton dissociation is determined to proceed through "hot" charge transfer states that set a fundamental time limit on charge separation. TR2PPE is used to investigate charge and energy transfer from organic semiconductors undergoing singlet fission, an analog of multiple exciton generation. The dynamic competition between one and two-electron transfer is determined for the tetracene/C₆₀ and tetracene/CuPc interfaces. These findings allow for the formulation of design principles for the successful harvesting of hot or multiple carriers for solar energy conversion. / text

In this dissertation novel work is presented showing the performance and device physics of Organic Field Effect Transistors (OFETs) and bulk heterojunction Organic Photovoltaic (OPV) devices fabricated using novel acceptor small molecules. Pentacene and N,N’-bis(n-octyl)-dicyanoperylene-3,4:9,10-bis(dicarboximide) (PDI-8CN₂) were used as the active layer in p-channel and n-channel Organic Field Effect Transistors (OFETs), respectively, and novel pulsed voltage transient measurements were developed in order to extract transient mobilities and carrier velocities from the transistor response of the device, which were well correlated with the corresponding DC OFET characteristics. A distributed RC network was used to model the OFET’s channel and the transient and DC characteristics of the devices were successfully reproduced. Temperature dependent studies of the DC field effect mobilities and transient mobilities of these two materials were carried out and the results used to extract information on charge carrier transport in the materials at varying time scales. Open-circuit voltages of the OPV devices are correlated with the Highest Occupied Molecular Orbital (HOMO) and Lowest Unoccupied Molecular Orbital (LUMO) levels various acceptor small molecules and donor polymers comprising the active layers of the devices. / text

published_or_final_version / Medicine / Doctoral / Doctor of Philosophy

Silicon carbide (SiC) is currently under development for high power bipolar devices such as insulated gate bipolar transistors (IGBTs). A major issue for these devices is the charge carrier lifetime, which, in the absence of structural defects such as dislocations, is influenced by point defects and their associated deep levels. These defects provide energy levels within the bandgap and may act as either recombination or trapping centers, depending on whether they interact with both conduction and valence band or only one of the two bands. Of all deep levels know in 4H-SiC, the intrinsic carbon vacancy related Z1/2 is the most problematic since it is a very effective recombination center which is unavoidably formed during growth. Its concentration in the epilayer can be decreased for the production of high voltage devices by injecting interstitial carbon, for example by oxidation, which, however, results in the formation of other new deep levels. Apart from intrinsic crystal flaws, extrinsic defects such as transition metals may also produce deep levels within the bandgap, which in literature have so far only been shown to produce trapping effects. The focus of the thesis is the transient electrical and optical characterization of deep levels in SiC and their influence on the carrier lifetime. For this purpose, deep level transient spectroscopy (DLTS) and minority carrier transient spectroscopy (MCTS) variations were used in combination with time-resolved photoluminescence (TRPL). Paper 1 deals with a lifetime limiting deep level related to Fe-incorporation in n-type 4H-SiC during growth and papers 2 and 3 focus on identifying the main intrinsic recombination center in p-type 4H-SiC. In paper 4, the details of the charge carrier capture behavior of the deeper donor levels of the carbon vacancy, EH6/7, are investigated. Paper 5 deals with trapping effects created by unwanted incorporation of high amounts of boron during growth of n-type 4H-SiC which hinders the measurement of the carrier lifetime by room temperature TRPL. Finally, paper 6 is concerned with the characterization of oxidation-induced deep levels created in n- and p-type 4H- and 6H-SiC as a side-product of lifetime improvement by oxidation. In paper 1, the appearance of a new recombination center in n-type 4H-SiC, the RB1 level is discussed and the material is analyzed using room temperature TRPL, DLTS and pnjunction DLTS. The level appears to originate from a reactor contamination with Fe, a transition metal that generally leads to the formation of several trapping centers in the bandgap. Here it is found that under specific circumstances beneficial to the growth of high-quality material with a low Z1/2 concentration, the Fe incorporation also creates an additional recombination center capable of limiting the carrier lifetime. In paper 2, all deep levels found in p-type 4H-SiC grown at Linköping University which are accessible by DLTS and MCTS are investigated with regard to their efficiency as recombination centers. We find that none of the detectable levels is able to reduce carrier lifetime in p-type significantly, which points to the lifetime killer being located in the top half of the bandgap and having a large hole to electron capture cross section ratio (such as Z1/2, which is found in n-type material), making it undetectable by DLTS and MCTS. Paper 3 compares carrier lifetimes measured by temperature-dependent TRPL measurements in n- and p-type 4H-SiC and it is shown that the lifetime development over a large temperature range (77 - 1000 K) is similar in both types. This is interpreted as a further indication that the carbon vacancy related Z1/2 level is the main lifetime killer in p-type. In paper 4, the hole and electron capture cross sections of the near midgap deep levels EH6/7 are characterized. Both levels are capable of rapid electron capture but have only small hole capture rates, making them insignificant as recombination centers, despite their advantageous position near midgap. Minority carrier trapping by boron, which is both a p-type dopant and an unavoidable contaminant in 4H-SiC grown by CVD, is investigated in paper 5. Since even the shallow boron acceptor levels are relatively deep in the bandgap, minority trap and-release effects are detectable in room-temperature TRPL measurements. In case a high density of boron exists in n-type 4H-SiC, for example leached out from damaged graphite reactor parts during growth, we demonstrate that these trapping effects may be misinterpreted in room temperature TRPL measurements as a long free carrier lifetime. Paper 6 uses MCTS, DLTS, and room temperature TRPL to characterize the oxidation induced deep levels ON1 and ON2 in n- and p-type 4H- and their counterparts OS1-OS3 in 6H-SiC. The levels are found to all be positive-U, coupled two-levels defects which trap electrons efficiently but exhibit very inefficient hole capture once the defect is fully occupied by electrons. It is shown that these levels are incapable of significantly influencing carrier lifetime in epilayers which underwent high temperature lifetime enhancement oxidations. Due to their high density after oxidation and their high thermal stability they may, however, act to compensate n-type doping in low-doped material.