In this study , we investigate the relationship between growth condition and thin film quality of cadmium sulfide (CdS) thin films grown by chemical bath deposition (CBD) method. Thin film structures are analyzed by X-ray diffraction , morphology and grain size are obtained by scanning electronic microscopy , and film thickness measured by reflectance spectroscopy . In medium pH value ( pH=10.5) , 20 min deposition can achieve 450 nm film thickness . At lower pH (pH=8.5), low hydrolysis rate of thiourea limits the concentration of sulfur anion , film thickness is only 49 nm after one hour deposition at 70 ¢J , and the obtained thin film can not fully cover the substrate to have a pin-hole free film . At higher pH (pH=11), 40 min only deposites 100 nm film thickness. Strong binding between the cadmium ion and the complexing agent causes low free cadmium cation concentration in the solution, which limits the growing rate. By varying the growth pH condition, the difference in thickness is more than one order of magnitude. In contrast to the film thickness relationship, grain size distribution suffers less influence from the pH consition. Our results indicate no explicitly relation between the grain size and solution pH condition. 20 minutes depositions result cadmium sulfide grain sizes to be 70¡Ó10nm , and 40 minutes result grain size to be 75¡Ó15nm . The results indicate that film thickness increases mainly due to the increasing of grain number, rather than the increasing of grain size . By summarized the results, we propose that the deposition of cadmium sulfide film is initially formed homogeneous nucleation in the solution. The nuclea diffuse and adhere to the substrate. Intristic electric dipole momentum of the cadmium sulfide nano-particle provides an attractive force for the adhesion, and results preferred orientation. Meanwhile, the grain keeps growing up until the size saturated .

The buffer layer is a crucial component in thin film solar cells. Defects at the interface between absorber and buffer layer lead to high recombination rate and the band structure at the interface highly affects the performance of the solar cell. In this thesis a method to synthesize thin films containing cadmium, zinc and sulfur, CdZnS, by chemical bath deposition has been developed and evaluated. A higher current from the device is expected when replacing the common buffer layer cadmium sulfide, CdS, with the more transparent CdZnS. It is also possible that the alternative buffer provides a more favorable energy band alignment at the interface with the absorber Copper-Zinc-Tin-Sulfide (CZTS). The deposition process was developed by studying depositions on glass. Increasing [Zn2+]/[Cd2+] initially led to films with higher band gap (Eg). By varying deposition time the time before colloidal growth became dominant was observed. Addition of triethanolamine showed that triethanolamine binds stronger to zinc ions than to cadmium ions. Two recipes that led to Eg=2.63 eV were evaluated as buffer layer in Copper-Indium-Gallium-Selenide (CIGSe) and CZTS solar cells. The short circuit current of the devices increased in general with the CdZnS buffers compared to CdS. The best CZTS cell with a CdZnS buffer layer had 7.7 % efficiency compared to the 7.5 % reference. For future research it is recommended that the effect of thickness variation and deposition temperature is evaluated and that additional material characterization is performed in order to further understand and develop the deposition method.

Le sulfure de zinc est l'un des premiers semiconducteurs découverts. Il a un grand potentiel d’applications grâces à ses propriétés physicochimiques. Il est intensément utilisé dans des applications optoélectroniques, photocatalytiques et pour la détection de gaz. En particulier, il est utilisé pour des applications photovoltaïques. Dans ce contexte, nous avons commencé par l’étude de l’effet du dopage par des métaux de transition (manganèse, cobalt et cuivre) sur les propriétés structurales, microstructurales, morphologiques, optiques, électriques et magnétiques des couches minces de sulfure de zinc préparées par la technique de dépôt chimique en solution (chemical bath deposition (CBD)) par diffraction aux rayons X, spectroscopie photoélectronique X, spectroscopie Raman, spectroscopie infrarouge, microscopie électronique à balayage, spectrophotométrie UV-Vis-NIR, effet Hall et SQUID. En second lieu nous avons étudié l’effet de la variation de l’épaisseur des couches formant la cellule photovoltaïque à base de Cu(In,Ga)Se2 par la simulation numérique à deux dimensions sous éclairement AM1.5 de puissance 100 mW/cm2 effectué sous Silvaco ATLAS / Zinc sulfide is one of the first semiconductors discovered. It has great potential application thanks to its physicochemical properties. It is used extensively in optoelectronic, photocatalytic and gas detection applications. In particular, it is used for photovoltaic applications. In this work, the effect of doping by transition metals (manganese, cobalt and copper) on the structural, microstructural, morphological, optical, electrical and magnetic properties of zinc sulfide thin films prepared by chemical bath deposition (CBD) technique are studied by X-ray diffraction, X-ray photoelectron spectroscopy, Raman spectroscopy, infrared spectroscopy, scanning electron microscopy, UV-VIS-NIR spectrophotometry, Hall effect and SQUID. The modeling and optimization of higher efficiency Cu(In,Ga)Se2 solar cells are also investigated in this thesis for various layers thickness by using Silvaco ATLAS

NEVES, Wellington de Queiroz. Caracterização ótica e estrutural de filmes de CdS depositados por banho químico. 2013. 79 f. Dissertação (Mestrado em Física) - Programa de Pós-Graduação em Física, Departamento de Física, Centro de Ciências, Universidade Federal do Ceará, Fortaleza, 2013. / Submitted by Edvander Pires (edvanderpires@gmail.com) on 2015-10-23T18:58:00Z No. of bitstreams: 1 2013_dis_wqneves.pdf: 2637234 bytes, checksum: abe116493230fe2c301fd4d61f25b006 (MD5) / Approved for entry into archive by Edvander Pires(edvanderpires@gmail.com) on 2015-10-23T19:37:34Z (GMT) No. of bitstreams: 1 2013_dis_wqneves.pdf: 2637234 bytes, checksum: abe116493230fe2c301fd4d61f25b006 (MD5) / Made available in DSpace on 2015-10-23T19:37:34Z (GMT). No. of bitstreams: 1 2013_dis_wqneves.pdf: 2637234 bytes, checksum: abe116493230fe2c301fd4d61f25b006 (MD5) Previous issue date: 2013 / Neste trabalho estudamos as propriedades óticas de filmes de sulfeto de cádmio (CdS) crescidos sobre um substrato de vidro. Os filmes foram obtidos por meio da técnica de deposição por banho químico (Chemical Bath Deposition, CBD). Os filmes de CdS são preparados numa solução aquosa, sob agitação, a uma temperatura de 80 oC durante 60 minutos sobre substrato de vidro. Alguns dos filmes foram obtidos com duplo depósito em dois banhos sucessivos iguais. Como fonte de íons de cádmio é usado sulfato de cádmio (CdSO4,) como fonte de íons de enxofre é usado a tioureia, como tampão é usado cloreto de amônia, e como agente complexante o Ethylenediamine tetra acetic acid (Edta) em várias concentrações. Após o crescimento, os filmes foram submetidos a um tratamento térmico no ar nas temperaturas de 300 ou 400 oC por uma hora. Foram realizadas medidas experimentais usando a técnicas de difração de raios-X, fototransmissão ótica UV-VIS e espectroscopia Raman. Os filmes de CdS obtidos possuem estrutura cúbica e são de coloração amarelada, homogêneos e muito aderentes ao substrato de vidro. São analisados os efeitos da concentração de Edta, tratamento térmico no ar, tempo de deposição e temperatura de crescimento dos filmes de CdS. Nossos resultados mostram que, sob as condições estudadas, os filmes de CdS não possuem fase hexagonal em sua estrutura. O gap dos filmes de CdS está em torno de 2,45 eV, com pequenas variações (2,40 – 2,51 eV) devido às condições experimentais de crescimento ou tratamento térmico após o crescimento. Observamos o modo LO, de simetria A1, em torno de 300 cm-1 e até três sobremodos desse fônon. Em alguns casos, os espectros Raman aparecem sobre uma larga fotoemissão, dependendo das condições experimentais.

Ce travail s'inscrit dans le cadre de la recherche d'une amélioration des conditions de réalisation des dispositifs photovoltaïques à base du matériau semiconducteur ternaire CuInS2, qui doit constituer la couche absorbante dans la cellule solaire. Différentes techniques économiquement rentables ont été retenues pour l'élaboration de ce matériau : nous avons sélectionné le dépôt chimique en solution (CBD), la pulvérisation chimique réactive avec air (spray) et la pulvérisation chimique réactive sans air (PSA). Les matériaux élaborés ont été inclus dans des dispositifs photovoltaïques, pour lesquels le CuInS2 est réalisé soit avec la méthode PSA (CuInS2/ZnO/SnO2/verre ou CuInS2/In2S3/ZnO/SnO2/verre), soit avec la méthode de spray (CuInS2/In2S3:Al/SnO2/pyrex ou CuInS2/ZnS:In/SnO2/pyrex).Globalement, les propriétés structurales, morphologiques et optiques sont satisfaisantes. Pour les cellules incluant le CuInS2 déposé par spray, le photo-courant existe et atteint jusqu'à 200 µA dans le cas de la cellule CuInS2/ZnS:In/SnO2/pyrex, ou environ 4 A/cm2. / Photovoltaic solar cells based on I–III–VI2 ternary chalcopyrite absorber layers, have been the focus of intense investigation for over two decades. The use of chalcopyrite absorbers are highly appealing since their bandgaps correlate well to the maximum photon power density in the solar spectrum. Cu-chalcopyrite semiconductors have been studied extensively in recent years due to their applications as absorbers for large-area low-cost photovoltaic devices. CuInS2 as a chalcopyrite-semiconductor material has a direct band gap of 1.5 eV, a high absorption coefficient and nontoxic constituents and is, therefore, a promising candidate for photovoltaic applications. Different methods have been used to prepare CuInS2 films. Among these methods, spray pyrolysis, used in the present study, is an attractive one because large-area films with good uniformity may be prepared at low cost.

No description available.

Carbon nanotubes have been of great interest given their unique electronic and mechanical properties. Scholars have focused on the addition of carbon nanotubes to various matrices in order to develop novel materials. These new hybrid materials would combine the properties of both the nanotubes and the matrix of choice, which can both enhance the mechanical and electronic properties of the matrix material, and allow for the matrix to be used for other applications. In order to take advantage of the properties of the nanotubes, it is vital for them to be well dispersed in a solution or matrix as individual tubes, rather than as bundles. Additionally, it is cost effective to have individually dispersed tubes in a matrix. In order to individually disperse the tubes in the matrix, they can be pre-treated or functionalized via both covalent and non covalent processes. Subsequent to functionalization, the nanotubes can be coated with the matrix material or other metal compounds. This can help with the dispersion and interface interaction with the matrix material, or create materials with novel properties. This thesis focuses on conditions of growing various metal compounds or metal oxides on nanotubes using chemical bath deposition (CBD) and liquid phase deposition (LPD) methods. CBD and LPD use aqueous mediums for growth and deposition of compounds, which makes it both environmentally friendly and cost effective. Different pre-treatments are first employed on the nanotubes in order for them to be both well dispersed in solution and provide nucleation sites for the deposition and growth of various metal and metal oxides on the surface of the nanotubes. Once an ideal deposition is achieved, applications of the coated tubes are studied, tested and discussed.

Thin film solar cells of Copper Indium Telluride and Cadmium Sulfide junctions were fabricated on plain ITO glass slides and also on those coated with intrinsic Tin Oxide. CdS was deposited through chemical bath deposition and CIT by electrodeposition. Both compounds were subjected to annealing at temperatures between 350°C and 500°C which produced more uniform film thicknesses and larger grain sizes. The CIT/ CdS junction was characterized after performing XRD and spectral absorption of individual compounds. Studies were also made on CdS / CdTe solar cells with respect to effect of annealing temperatures on open circuit voltages. NP acid etch, the most important process to make the surface of CdTe tellurium rich, was also studied in terms of open circuit voltages. Thermally evaporated CdS of four different thicknesses was deposited on Tin Oxide coated ITO and inferences were drawn as to what thickness of CdS yields better results.

This work focuses on the solar cell based on the heterostructure formed between Copper Phthalocyanine (CuPc) and Cadmium Sulfide (CdS). Two different fabrication techniques were used for depositing the organic and inorganic layers of CuPc and CdS layers respectively. CuPc was deposited by electrodeposition while CdS was deposited by chemical bath deposition. Hybrid CdS/CuPc thin films were obtained from CdS films grown on Glass/ITO by chemical bath deposition followed by electrodeposition of CuPc onto these films and annealing at 250˚C after the deposition of each layer. The maximum open circuit voltage (Voc) and the short circuit current density (Jsc) obtained for this heterojunction solar cell are 0.59v and 0.7mA/cm2 respectively and these are the highest values achieved in literature till date. The materials characteristics and electrical performances of the device were analyzed. The effect of increasing the thickness of CuPc and CdS on the short circuit current density and open circuit voltage were also investigated.

Orientadores: Italo Odone Mazali, Talita Mazon / Dissertação (mestrado) - Universidade Estadual de Campinas, Instituto de Química / Made available in DSpace on 2018-08-21T15:25:01Z (GMT). No. of bitstreams: 1 Madalossi_NatiaraVaughn_M.pdf: 3988977 bytes, checksum: 5fd028b4052bd1c0173b1e06a840ab1b (MD5) Previous issue date: 2012 / Resumo: Este trabalho reporta a síntese e caracterização de nanoestruturas de ZnO com morfologia de nanobastões hexagonais, crescidas verticalmente ao substrato de silício. Para o crescimento vertical dos nanobastões foi depositado um filme constituído por grãos de ZnO para atuar como camada de nucleação. Neste trabalho, as sínteses dos nanobastões e das camadas de nucleação foram preparadas por métodos químicos. As camadas de nucleação foram obtidas com a calcinação do filme de precursor polimérico e de 2-etilhexanoato de zinco, os quais foram depositados sobre o substrato de silício com o uso da técnica de spin coating e tratados termicamente em diferentes temperaturas para a formação dos grãos cristalinos de ZnO. Os nanobastões crescidos sobre as camadas de nucleação foram obtidos via síntese hidrotermal e síntese de deposição por banho químico (CBD). As camadas de nucleação e os nanobastões apresentaram estrutura cristalina tipo wurtzita com crescimento preferencial na direção [002] na qual a propriedade piezoelétrica se manifesta. As análises de espectroscopia Raman corroboraram com as análises de difração de raios X, sendo que não houve os deslocamentos das bandas do ZnO, indicando que os nanobastões não estavam no modo de confinamento quântico. Os nanobastões apresentam vários tipos de defeitos cristalinos, provocando a formação de defeitos eletrônicos na região da banda proibida, promovendo uma emissão centrada em 600 nm nas análises de espectroscopia de fotoluminescência. Para o estudo da resposta piezoelétrica dos nanobastões foi utilizado um substrato condutor de silício com um filme de platina para o crescimento dos nanobastões. O dispositivo constituiu-se de um eletrodo, formado pelo substrato condutor com as nanoestruturas e um contraeletrodo, formado pelo substrato condutor. Verificou-se que o dispositivo tem um comportamento de diodo tipo Schottky, sendo que a resposta piezoelétrica frente a uma deformação física foi de até 7 mV, indicando que os nanobastões podem ser utilizados como conversores de energia mecânica em energia elétrica / Abstract: This work reports the synthesis and characterization of nanostructures of ZnO with hexagonal nanorods morphology, growth vertically on silicon substrate. For the vertical growth a film constituted for ZnO grain was deposited over the substrate to act as nucleation layer. In this work, the synthesis of nanorods and nucleation layer was made by chemical methods. The nucleation layers were obtained by calcination of the polymeric precursor and 2-ethylhexanoate, being deposited on the silicon substrate by spin coating technique and annealed at different temperatures to promote the formation of ZnO crystalline grains. The growth of the nanorods on the nucleation layers were obtained by hydrothermal and chemical bath deposition (CBD) synthesis. The nucleation layers and the nanorods have wurtzite structure with preferential growth along the [002] axis, where the piezoelectric properties show up. Raman spectroscopy analyzes corroborate the x-ray diffraction, and there was no ZnO band shift, indicating that the nanorods would not be in quantum confinement. The nanorods showed different types of crystal defects, inducing the formation of electronic defects in the band gap. These defects showed an emission centered at 600 nm in photoluminescence spectroscopy. To study the piezoelectric response of the nanorods, a silicon substrate with a platinum film was used to grow the nanorods. The device consists of electrode formed by the conductive substrate with the nanorods and a contra-electrode, formed by the conductor substrate. It was found that the device is a Schottky type diode and the piezoelectric response was to 7 mV by physical deformation. Therefore, ZnO nanorods can be used as converter mechanical energy into electricity / Mestrado / Quimica Inorganica / Mestra em Química