Les Diodes Electroluminescentes (DEL) à base de composés III-nitrures sont très efficaces pour les longueurs d’ondes correspondant à la couleur bleue. Ces DELs bleues sont très utilisées sur le marché car leur combinaison avec des phosphores produit une lumière blanche. Néanmoins, cette approche a plusieurs inconvénients tels que l’instabilité de la température de couleur ou les pertes liées à la conversion. Dans ce contexte la DEL blanche monolithique dont la lumière blanche est obtenue directement dans la zone active grâce à l’émission des puits quantiques à différentes longueurs d’ondes est envisagée.Pourtant, lorsque la longueur d’onde d’émission augmente, le rendement d’émission des puits quantiques InGaN/GaN diminue. Ceci est problématique pour l’application de la DEL blanche monolithique mais également pour l’application micro-display qui nécessite idéalement des DELs monochromatiques bleues, vertes et rouges fabriquées à partir de la même famille de matériaux. Ce problème est principalement du à la différence importante de paramètre de maille entre les puits quantiques InGaN et la couche GaN sur saphir utilisée comme substrat qui provoque une forte contrainte compressive. Cette contrainte est à l’origine d’un champ électrique interne dans les puits quantiques, préjudiciable au rendement d’émission, et d’un taux d’incorporation d’indium faible bien qu’originellement thermodynamiquement difficile.Cette thèse de doctorat propose de résoudre ce problème en réalisant la croissance de la DEL sur un pseudo-substrat InGaN appelé InGaNOS fabriqué par Soitec.Après avoir identifié les limitations des structures InGaN/GaN sur substrat GaN sur sapphire classique pour l’émission efficace à grande longueur d’onde, des structures « tout-InGaN » ont été crues par EPVOM sur substrats InGaNOS. Il a été démontré que la contrainte était partiellement relaxée et que l’incorporation d’indium était plus facile. Grâce à des caractérisations optiques et structurelles fines, les différentes étapes depuis la reprise de croissance InGaN jusqu’à la DEL complète ont été étudiées. En photoluminescence (PL), la longueur d’onde de 617 nm a été atteinte à température ambiante. Les performances optiques de ces structures de puits quantiques dans les régions spectrales correspondant au vert, jaune et ambre ont été mesurées et sont comparables aux meilleures valeurs de la littérature. Enfin, la croissance de la première DEL « tout InGaN » sur substrat InGaN a révélé les challenges restants qui nécessiteront des développements complémentaires. / Light emitting diodes (LEDs) based on nitride materials are very efficient in the blue range. These blue LEDs combined with phosphors are used to manufacture white LEDs widely used in the lighting market. Nonetheless, this converted approach presents some disadvantages , like an instability of the color temperature or conversion losses. In this context, the white monolithic LED which produces the white color thanks to different emission wavelengths produced from quantum wells (QWs) placed in the active region is one of the considered solution.However, as emission wavelength increases the quantum efficiency of the InGaN based QWs decreases. This is problematic for the white monolithic application but also for micro-display application which both ideally requires red, green and blue monochromatic LEDs grown in the same material system. This issue is mainly due to the great lattice mismatch between the InGaN QW and the GaN layer on sapphire substrate which induces an important compressive strain. This strain is responsible for a strong internal electric field in the QWs, which is detrimental for the quantum efficiency, and for low indium incorporation rate in GaN, originally thermodynamically difficult.This PhD thesis proposes to tackle this issue by growing the LED on an InGaN pseudo-substrate called InGaNOS manufactured by Soitec.After identifying the limitations of InGaN based structures grown on regular GaN on sapphire substrate for efficient long wavelength emission, full InGaN structures were grown by MOCVD on InGaNOS substrates. It was shown that the strain was partially released and the indium incorporation was made easier. Through fine structural, optical and electrical characterizations, the different steps leading from the InGaN buffer regrowth stage to the complete processed LED were studied. PL emission wavelengths up to 617 nm were reached at room temperature. The optical performances of these MQW structures in the green, yellow and amber range were measured to be comparable to the best ones achieved in the literature. Finally, the growth of the first full InGaN LED structure on InGaN substrate revealed the remaining challenges that will require some additional developments.

Le système des nano-colonnes auto-assemblées de GeMn, riches en Mn et entourées d'une matrice de germanium quasi pure, est un matériau prometteur pour la spintronique. Selon les paramètres de croissance, les échantillons contiennent des nano-colonnes de type cohérents sur la matrice de Ge, de type amorphe, ou/et des nano-inclusions de Ge3Mn5. Ce manuscrit présente notre étude des propriétés électroniques, magnétiques et structurales des nano-colonnes de GeMn à l'aide du rayonnement synchrotron. Les mesures de la diffusion et diffraction des rayons X en incidence rasante dans des échantillons contenant des nano-colonnes cohérentes et sans précipités de Ge3Mn5 montrent un certain désordre dans les nano-colonnes. Les cartographies de l'espace réciproque ont pu être quantitativement expliquées en considérant la déformation de la matrice de germanium due à l'inclusion des nano-colonnes dans celle-ci, ainsi que par leurs corrélations de position, sans avoir recours à d'autres phases cristallines. La spectroscopie d'absorption et le dichroïsme circulaire magnétique de rayons X ont permis de sonder spécifiquement les propriétés magnétiques des atomes de Mn dans des échantillons sans précipités de Ge3Mn5. On observe une allure des spectres XAS-XMCD des nano-colonnes très similaire à celle observée dans le cas de Ge3Mn5. Le moment magnétique local sur le manganèse possède une composante orbitale faible mais non-nulle et une amplitude totale (0.8 +/- 0.1 µB) plus faible que celle attendue pour Ge3Mn5 (~2.6 µB) ou pour des atomes de Mn substitutionnels (~3 µB). Ceci indique une origine différente de la phase des nano-colonnes. Les spectres XAS-XMCD ont été calculés pour différentes structures modèles, incluant des défauts simples ainsi de nouvelles phases cristallines, les paramètres critiques des calculs ayant été identifiés. Le meilleur accord est observé pour une nouvelle phase de type Ge2Mn. / The system of self-assembled Mn-rich GeMn nanocolumns embedded in a Mn-poor germanium matrix is a promising material for spintronics applications. Depending on the growth parameters, coherent GeMn nanocolumns, amorphous GeMn nanocolumns and/or Ge3Mn5 nanoclusters can be observed. In this manuscript, we report on the investigation on the electronic, magnetic and structural properties of the GeMn nanocolumns using synchrotron techniques. Measurements using grazing incidence x-ray scattering techniques in samples containing coherent nanocolumns, free from Ge3Mn5 precipitates, show some disorder in the nanocolumns. Reciprocal space maps are quantitatively explained by considering the scattering of the Ge matrix strained by the inclusion of the nanocolumns in the matrix and their correlations in position, without requiring the consideration of different additional phases. X-ray absorption spectroscopy and x-ray magnetic circular dichroism allow for the specific probing of the Mn magnetic properties in samples free of Ge3Mn5 clusters. The lineshapes of the XAS-XMCD spectra in the nanocolumns are found to be very similar to those in Ge3Mn5. The local magnetic moment on the Mn atom possess a small but non-zero orbital component and its total magnitude is much smaller (0.8 +/- 0.1 µB) than that in Ge3Mn5 (~2.6 µB) or than that expected for fully substitutional Mn atoms (~3 µB). This points to a different nature of the nanocolumns. The XAS-XMCD spectra have been calculated for several structural models, including simple defects and new crystalline phases, and critical parameters for the calculations have been identified. The best agreement is found for a new Ge2Mn crystalline phase.

abstract: This thesis presents research on innovative AC transmission design concepts and focused mathematics for electric power transmission design. The focus relates to compact designs, high temperature low sag conductors, and high phase order design. The motivation of the research is to increase transmission capacity with limited right of way. Regarding compact phase spacing, insight into the possibility of increasing the security rating of transmission lines is the primary focus through increased mutual coupling and decreased positive sequence reactance. Compact design can reduce the required corridor width to as little as 31% of traditional designs, especially with the use of inter-phase spacers. Typically transmission lines are built with conservative clearances, with difficulty obtaining right of way, more compact phase spacing may be needed. With design consideration significant compaction can produce an increase by 5-25% in the transmission line security (steady state stability) rating. In addition, other advantages and disadvantages of compact phase design are analyzed. Also, the next two topics: high temperature low sag conductors and high phase order designs include the use of compact designs. High temperature low sag (HTLS) conductors are used to increase the thermal capacity of a transmission line up to two times the capacity compared to traditional conductors. HTLS conductors can operate continuously at 150-210oC and in emergency at 180-250oC (depending on the HTLS conductor). ACSR conductors operate continuously at 50-110oC and in emergency conditions at 110-150oC depending on the utility, line, and location. HTLS conductors have decreased sag characteristics of up to 33% compared to traditional ACSR conductors at 100oC and up to 22% at 180oC. In addition to what HTLS has to offer in terms of the thermal rating improvement, the possibility of using HTLS conductors to indirectly reduce tower height and compact the phases to increase the security limit is investigated. In addition, utilizing HTLS conductors to increase span length and decrease the number of transmission towers is investigated. The phase compaction or increased span length is accomplished by utilization of the improved physical sag characteristics of HTLS conductors. High phase order (HPO) focuses on the ability to increase the power capacity for a given right of way. For example, a six phase line would have a thermal rating of approximately 173%, a security rating of approximately 289%, and the SIL would be approximately 300% of a double circuit three phase line with equal right of way and equal voltage line to line. In addition, this research focuses on algorithm and model development of HPO systems. A study of the impedance of HPO lines is presented. The line impedance matrices for some high phase order configurations are circulant Toeplitz matrices. Properties of circulant matrices are developed for the generalized sequence impedances of HPO lines. A method to calculate the sequence impedances utilizing unique distance parameter algorithms is presented. A novel method to design the sequence impedances to specifications is presented. Utilizing impedance matrices in circulant form, a generalized form of the sequence components transformation matrix is presented. A generalized voltage unbalance factor in discussed for HPO transmission lines. Algorithms to calculate the number of fault types and number of significant fault types for an n-phase system are presented. A discussion is presented on transposition of HPO transmission lines and a generalized fault analysis of a high phase order circuit is presented along with an HPO analysis program. The work presented has the objective of increasing the use of rights of way for bulk power transmission through the use of innovative transmission technologies. The purpose of this dissertation is to lay down some of the building blocks and to help make the three technologies discussed practical applications in the future. / Dissertation/Thesis / Doctoral Dissertation Electrical Engineering 2015

abstract: Flexibility, reconfigurability and wearability technologies for antenna designs are presented, investigated and merged in this work. Prior to the design of these radiating elements, a study is conducted on several flexible substrates and how to fabricate flexible devices. Furthermore, the integration of active devices into the flexible substrates is also investigated. A new approach of designing inkjet-printed flexible reconfigurable antennas, based on the concept of printed slot elements, is proposed. An alternate technique to reconfigure the folded slot antenna is also reported. The proposed radiator works for both Wireless Local Area Network (WLAN) and Worldwide Interoperability for Microwave Access (WiMAX) applications. The flexible reconfigurable antenna is also redesigned to resonate at both (2.4/5.2 GHz) for WLAN devices and its Multiple-Input Multiple-Output (MIMO) configuration is reported. Two orthogonal elements are used to form the MIMO antenna system for better isolation. The wearability of the proposed flexible reconfigurable radiator is also discussed. Since wearable antennas operate close to the human body, which is considered as a lossy tissue, an isolation between the radiating elements and human body is required to improve the radiation characteristics and to reduce the Specific Absorption Rate (SAR). The proposed antenna is redesigned on an Artificial Magnetic Conductor (AMC) surface that also functions as a ground plane to isolate the radiator from the human body. To examine its performance as a body-worn device, it is measured at different positions on the human body. Furthermore, simulations show that the SAR level is reduced when using the AMC surface. The proposed wearable antenna works for both Wireless Body Area Network (WBAN) and WiMAX body-worn wireless devices. Electromagnetic bandgap (EBG) structures are used to suppress surface wave propagation in printed antennas. However, due to the presence of vias, not all of them can be utilized in flexible radiators. Thus, a Perforated High Impedance Surface (PHIS) is proposed which suppresses the surface waves without the need of vias, and it also serves as a ground plane for flexible antennas. The surface wave suppression and the antenna applications of the proposed PHIS surface are discussed. / Dissertation/Thesis / Doctoral Dissertation Electrical Engineering 2017

L'utilisation de matériaux conducteurs transparents (TCM) a rapidement augmenté au cours des deux dernières décennies en raison de la demande croissante liée à l'usage d'appareils électroniques personnels ainsi qu'au développement de cellules solaires à base de couches minces. Jusqu'à présent, le TCM le plus couramment utilisé a été l'oxyde d'indium et d'étain (ITO), mais l'indium est une terre rare dont l'environnement géopolitique lié à son approvisionnement et à sa production est complexe. En outre, la famille des oxydes transparents conducteurs possèdent de médiocres propriétés mécaniques (associée à une fragilité mécanique) et exige souvent pour leur dépôt soit une synthèse à haute température (> 400 ° C) soit des procédés sous vide. Pour ces raisons, la recherche au cours des dernières années a mis l'accent sur la recherche de TCM alternatifs afin de remplacer l'ITO. Cette thèse s'ancre sur une double approche combinant simulations numériques et des expériences pour explorer le dépôt et l'optimisation des réseaux de nanofils d'argent pour une utilisation comme électrode transparente d'une part et d'améliorer la compréhension de leurs propriétés physiques d'autre part. L'approche par simulation concerne la modélisation de la percolation de réseaux de nanofils 2D tandis que la composante expérimentale explore les propriétés électriques et optiques des réseaux de nanofils d'argent et notamment le comportement de la résistance électrique lors de recuits thermiques. Nous présentons dans ce travail la modélisation 2D de la percolation de systèmes initialement composés de bâtonnets parfaits au sein d'un réseau idéal, puis l'étude de l'influence de paramètres tels que: la distribution des longueurs de bâtonnets, des distributions angulaires ou de la courbure de ces bâtonnets. Nous nous sommes aussi intéressés à la divergence de la densité critique nécessaire pour observer la percolation au sein de systèmes de petite taille (vis-à-vis de la longueur des bâtonnets). Par ailleurs un travail préliminaire sur la simulation de l'efficacité de collecte (ou d'injection) de charges par un réseau de nanofils est présenté. Le volet expérimental fournit une analyse de l'influence de la longueur des fils, de leur diamètre, de la densité du réseau et enfin de la méthode de dépôt sur les propriétés optiques et électriques des réseaux de nanofils d'argent. Une étude approfondie de l'effet de recuit thermique sur les propriétés des réseaux a été réalisée qui a révélé plusieurs mécanismes qui sont à l'origine de la diminution initiale de la résistance électrique à relativement basse température puis la divergence de la résistance électrique observée à haute température. Une observation originale a permis de révéler un phénomène de percolation géométrique quantifiée pour les réseaux peu denses qui a été associé à la présence de chemins efficaces de percolation indépendants. Ce travail permet de conclure que les réseaux de nanofils d'argent constituent une solution intéressante pour une utilisation comme électrode transparente en remplacement de l'ITO ; notamment car ils ont des propriétés mécaniques supérieures et peuvent atteindre des propriétés électro-optiques comparables voire même supérieures. / The use of transparent conductive materials (TCMs) has rapidly increased in the last two decades as a result of increasing demand for personal electronic devices and the development of thin film based solar cells. To date the most commonly used TCM is indium tin oxide (ITO), however indium is a rare earth metal with a complex geopolitical environment surrounding its supply and production. Furthermore the oxide family suffers from poor mechanical properties such as brittleness and generally requires either high temperature synthesis (>400°C) or vacuum processes for their deposition. For these reasons, research in recent years has focused on searching for a TCM to replace ITO. This thesis uses a dual approach combining simulations and experiments to explore the fabrication and optimisation of silver nanowire networks for use as a TCM and to improve the understanding of their physical properties. The simulation component focuses on the application of percolation modelling to 2D nanowire networks while the experimental component explores the electrical and optical properties of silver nanowire networks and their electrical behaviour under thermal annealing. We present in this work the modelling of 2D stick percolation systems initially composed of perfect idealised sticks, and then investigate the influence of parameters such as: length distributions, angular distributions or curved nanowires. We address the divergence of the critical density for the onset of percolation observed for small system sizes and introduce some preliminary work on simulating the collection (or injection) efficiency of charges by a nanowire network. The experimental component provides a discussion of the impact of wire length, wire diameter, network density and fabrication technique on the optical and electrical properties of silver nanowire networks. An in-depth study of the effect of thermal annealing on the networks properties was undertaken which revealed several mechanisms that were responsible for the initial reduction of resistance and final loss of conductivity observed. An original observation enables the revelation of geometrical quantized percolation for rather sparse networks. Finally we conclude that silver nanowire networks are an excellent prospect for a TCM to replace ITO, they have superior mechanical properties and can achieve comparable and even superior electro optical properties.

Made available in DSpace on 2014-06-11T19:22:33Z (GMT). No. of bitstreams: 0 Previous issue date: 2007-11-30Bitstream added on 2014-06-13T20:27:56Z : No. of bitstreams: 1 carvalho_cg_me_ilha.pdf: 1013674 bytes, checksum: 2251b87eda27daaaa94e554489ebe5d0 (MD5) / Coordenação de Aperfeiçoamento de Pessoal de Nível Superior (CAPES) / O objetivo deste trabalho é desenvolver uma metodologia para definir um condutor equivalente para um condutor múltiplo. O método baseia-se no fato de que os parâmetros dos subcondutores estão distribuídos ao longo do comprimento dos mesmos e, deste modo, cada subcondutor deve ser tratado como uma linha de transmissão. Inicialmente são obtidas as relações entre as correntes e tensões nos dois terminais de cada subcondutor. Em seguida, considera-se que a corrente no condutor múltiplo deve ser igual à corrente no condutor equivalente. Uma vez que as tensões e correntes nos terminais do condutor equivalente são conhecidas, é possível obter a impedância longitudinal e a admitância transversal deste condutor. O método desenvolvido foi aplicado em um condutor múltiplo hipotético constituído de dois subcondutores. Os resultados obtidos com este método são comparados com o método clássico de obtenção do condutor equivalente, que se baseia no raio médio geométrico dos subcondutores do condutor múltiplo. Para isto foi mostrado que quando o raio médio geométrico é usado para definir um condutor equivalente de um condutor múltiplo, os parâmetros longitudinais e transversais do condutor equivalente são afetados. / The objective of this work is to improve a methodology to define an equivalent conductor for a bundled conductor. The proposed methodology takes into account that the longitudinal and transversal parameters are distributed along the subconductors. This way, each subconductor of a bundled conductor needs to be considered as being a transmission line. Initially the relationships among currents and voltages at sending and receiving end of each subcondutor are obtained. Then, it is considered that total currents and voltages at sending and receiving end of the bundled conductor is equal to currents and voltages at sending and receiving end of the equivalent conductor. Taking into account that parameters of the equivalent conductor are distributed parameters, it is possible to obtain them from currents and voltages at sending and receiving end. The proposed methodology was applied in a hypothetical bundled conductor constituted by two subconductors. The results were compared with results obtained by using geometric mean radius. It was shown that when geometric mean radius is used to define an equivalent conductor of a bundled conductor, the longitudinal and transversal parameters of the equivalent conductor are severely affected.

Made available in DSpace on 2014-06-11T19:22:33Z (GMT). No. of bitstreams: 0 Previous issue date: 2009-07-27Bitstream added on 2014-06-13T18:08:29Z : No. of bitstreams: 1 costa_ecm_me_ilha.pdf: 1777300 bytes, checksum: f5e35375b4a1e9e034ae9b487436cef5 (MD5) / Coordenação de Aperfeiçoamento de Pessoal de Nível Superior (CAPES) / O presente trabalho descreve detalhadamente uma metodologia alternativa para o cálculo dos parâmetros longitudinais e transversais de um condutor múltiplo genérico, com base na configuração de um condutor equivalente. A metodologia proposta considera precisamente o acoplamento mútuo entre os subcondutores que compões o feixe, a natureza distribuída dos parâmetros e a distribuição da corrente, uniforme ou desigual, através dos subcondutores. São calculados e analisados os parâmetros utilizando a metodologia alternativa proposta e o procedimento clássico baseado na obtenção de um condutor equivalente aplicando o conceito do Raio Médio Geométrico (RMG), para diversos condutores múltiplos, sendo eles simétricos ou não simétricos, convencionais ou não-convencionais. Posteriormente, são comparados os resultados obtidos por ambos os métodos e a partir desses é possível comprovar a eficácia da metodologia proposta e eventuais situações em que a metodologia clássica, envolvendo o conceito do RMG, apresenta algumas imprecisões derivadas da distribuição não uniforme da corrente em condutores múltiplos assimétricos ou pouco convencionais / The present work describes an alternative methodology to evaluate the longitudinal and transversal parameters of a generic bundled conductor, based on the configuration of an equivalent conductor. The proposed methodology considers precisely the mutual coupling among subconductors of the bundle, the distributed nature of parameters and the current distribution through subconductors. The parameters are calculated and analyzed using the proposed alternative methodology and the classic procedure, based on equivalent conductor applying the concept of Geometric Mean Radius (GMR), for several bundled conductors, symmetric or nonsymmetric, conventional or non-conventional. Subsequently, the obtained results are compared to both methods and then it is possible to verify the efficacy of the proposed methodology and eventual situations where the classic methodology, based on RMG concept, presents inaccuracies due to the non-uniform distribution of the current in non-symmetric or non-conventional bundled conductors

Preparation and performance of the perovskite-type barium strontium cobalt iron oxide (Ba_0.5 Sr_0.5 Co_0.8 Fe_0.2 O_(3-δ), BSCF) and its doped compositions were studied in this dissertation. Three transition metals (copper, nickel and niobium) were substituted into the parent BSCF at various ratios to create the formula Ba_0.5 Sr_0.5 (Co_0.8 Fe_0.2)_(1-x) M_x O_(3-δ) (0.02≤x≤0.30; M=Cu,Ni or Nb). Two synthetic methods (solid-state reaction and wet chemical co-precipitation) were developed for the preparation of starting powders. In the previous reports [1, 2], BSCF ceramics suffered from insufficient densification and severe cracking; these problems were resolved in this study by optimising the ceramic processing conditions. The phase transition sequences from starting powders to single-phase cubic perovskite were studied by SEM, XRD, TGA, EDS and Raman spectroscopy. The powders prepared by solid-state method were found to require higher calcination temperature to form pure perovskite phase, and an extra intermediate structure (Ba,Sr)Fe_2 O_4 was detected in the reaction sequence. The materials performance was examined from five aspects: thermal stability, chemical stability, oxygen permeability, electronic conductivity and mechanical performance. The secondary phases of thermal/chemical degradation were investigated, and a needle-like intragranular precipitate was originally discovered in this work. It was discovered that the niobium substitution could significantly improve BSCF’s thermal stability and chemical stability. The oxygen permeability and mechanical performance were also improved by niobium when the substitution ratios are small (< 10%). Although the electronic conductivity was lowered by niobium substitution as a trade-off, it does not become a drawback to restrict the materials’ potential applications as mixed ionic-electronic conductors (MIEC).Furthermore, the material system’s “composition - lattice structure - performance” relationships were systematically investigated in this work; the oxygen deficiency value (δ) and the average bond energy (ABE) were found to have strong correlations with the materials performance.

No description available.

Orientadores: Rubens Maciel Filho, Fernando Ely / Dissertação (mestrado) - Universidade Estadual de Campinas, Faculdade de Engenharia Química / Made available in DSpace on 2018-08-22T07:45:29Z (GMT). No. of bitstreams: 1 Matsumoto_Agatha_M.pdf: 4679251 bytes, checksum: 08fb9e84038f307956ec356550160f03 (MD5) Previous issue date: 2013 / Resumo: Células fotovoltaicas orgânicas (OPVs) tem sido foco de intensa pesquisa devido ao seu potencial de baixo custo de produção e pela típica característica de serem flexíveis. Apesar de tais vantagens, estes dispositivos ainda têm baixa eficiência quântica (PCE). Este trabalho explora o desenvolvimento de processos de fabricação reprodutíveis e o uso de novos materiais em estruturas de dispositivo fotovoltaico. Inicialmente foi construído dispositivo padrão seguindo a estrutura de ITO/ PEDOT VpAl/ P3HT:PCBM/ Al, que corresponde à estrutura OPV mais estudada, até hoje, e que conduz a altas eficiências de fotoconversão. Foram ajustados todos os parâmetros físico-químicos para se obter as soluções mais estáveis possíveis e camadas funcionais uniformes do dispositivo padrão. Diversas modificações, neste dispositivo padrão, foram introduzidas para incrementar a eficiência quântica originalmente obtida. Primeiramente, foi testada a aplicação de PEDOT condutor e nanoparticulas (NP) de ZnO como camada buffer em substituição ao PEDOT VpAl. Posteriormente, o composto liquido-cristalino TAPCu-52 foi introduzido como material do tipo-P na camada ativa, em substituição ao polímero P3HT. Cristais líquidos também foram estudados como aditivos funcionais na camada ativa para aumentar a mobilidade dos portadores de carga e facilitar a separação do par elétron-buraco fotogerado. Por fim, buscando tornar o dispositivo completamente flexível foi realizada a substituição do eletrodo transparente de ITO por uma camada de PEDOT condutor, obtida pelo método de spray manual e ultrasônico. As caracterizações elétricas e morfológicas das células OPV, mostraram que todas as modificações feitas levaram a resultados positivos em relação ao dispositivo padrão fabricados / Abstract: Organic photovoltaics (OPVs) have been the focus of research due its flexible characteristics and low cost of production. Despite such advantages these devices still have low quantum efficiency (PCE), which is an obstacle for commercialization. This work explores reliable fabrication processes and new materials for OPV structures. For comparison, we fabricated standard devices having the well studied structure ITO/ PEDOT VpAl/ P3HT:PCBM/ Al which can lead to high fotoconversion efficiencies. Physical and chemical parameters were modified to achieve stable solutions and uniform functional layers. Several modifications in this standard device were introduced in order to increase the original PCE obtained. Firstly, conductive PEDOT and ZnO nanoparticles layers were added in replacement of the PEDOT VpAl as buffer. Afterwards, the liquid-crystalline compound TAPCu-52 was studied as p-type material in the active layer to substitute the P3HT polymer. Liquid crystals were also investigated as functional additives to increase the charge carrier mobility and electron-hole separation. Finally, ITO was changed by a conductive PEDOT layer deposited by handheld and ultrasonic spray as transparent anode in order to have a more flexible device. In general, the electrical and morphological characterizations indicated that all studied modifications had positive effect on the PCE of the manufactured OPV devices / Mestrado / Desenvolvimento de Processos Químicos / Mestra em Engenharia Química