We deposited CuInSe2 or CuIn1-xGaxSe2 on the substrate of bi-layer Mo by electrodeposition. Besides, we deposited bi-layer Mo by RF sputtering on soda-lime glass. First, we discussed the characteristic of Mo metal, and how can we have a good adhesion and a low resistivity simultaneously. Then, we deposited CuInSe2 and CuIn1-xGaxSe2 thin film by electrodeposition, and discussed the effect of depositing time, pH value in depositing solution, depositing current and different concentration ions respectively.

Semiconductor nanocrystal-based photovoltaics are an interesting new technology with the potential to achieve high efficiencies at low cost. CuInSe2 nanocrystals have been synthesized in solution using arrested precipitation and dispersed in solvent to form a “solar ink”. The inks have been deposited under ambient conditions to fabricate photovoltaic devices with efficiency up to 3%. Despite the low cost spray coating deposition technique, device efficiencies remain too low for commercialization. Higher efficiencies up to 7% have been achieved using a high temperature selenization process, but this process is too expensive. New nanocrystal film treatment processes are necessary which can improve the device efficiency at low cost. To this end, CuInSe2 nanocrystals were synthesized using a diphenyl phosphine:Se precursor which allows for precise control over the nanocrystal size. The size is controlled by changing the temperature of the reaction. The smallest size nanocrystals demonstrated extremely high device open circuit voltage. Ligand exchange procedures were used to replace the insulating oleylamine capping ligand used during synthesis with more conductive halide ions or inorganic chalcogenidometallate cluster (ChaM) ligands. These ligands led to improved charge transport in the nanocrystal films. A high-intensity pulsed light processing technique known as photonic curing was used which allows for high temperature sintering of nanocrystal films on temperature-sensitive substrates. High energy pulses cause the nanocrystals to sinter into large grains, primarily through melting and resolidification. The choice of metal back contact has a dramatic effect on the final film morphology, with Au and MoSe2 back contacts providing much better adhesion with the CuInSe2 than Mo back contacts. Nanocrystal sintering without melting can be achieved by replacing the oleylamine ligands with ChaM ligands prior to photonic curing. Low energy photonic curing pulses vaporize the oleylamine ligands without inducing sintering or grain growth. This greatly improved nanocrystal coupling and interparticle charge transport. Multiexcitons were successfully extracted from these nanocrystal films and external quantum efficiencies over 100% were observed. Transient absorption spectroscopy was used to study the multiexciton generation process in CuInSe2 nanocrystal films and colloidal suspensions. The multiexciton generation efficiency, threshold, and Auger lifetimes for CuInSe2 compare well with other nanocrystal materials. / text

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A newly designed setup to perform steady-state X-ray excited optical luminescence (XEOL) spectroscopy and simultaneous XEOL and X-ray absorption spectroscopy characterization at beamline P65 of PETRA III is described. The XEOL setup is equipped with a He-flow cryostat and state-ofthe- art optical detection system, which covers a wide wavelength range of 300– 1700 nm with a high spectral resolution of 0.4 nm. To demonstrate the setup functioning, low-temperature XEOL studies on polycrystalline CuInSe2 thin film, single-crystalline GaN thin film and single-crystalline ZnO bulk semiconductor samples are performed.

A newly designed setup to perform steady-state X-ray excited optical luminescence (XEOL) spectroscopy and simultaneous XEOL and X-ray absorption spectroscopy characterization at beamline P65 of PETRA III is described. The XEOL setup is equipped with a He-flow cryostat and state-ofthe- art optical detection system, which covers a wide wavelength range of 300– 1700 nm with a high spectral resolution of 0.4 nm. To demonstrate the setup functioning, low-temperature XEOL studies on polycrystalline CuInSe2 thin film, single-crystalline GaN thin film and single-crystalline ZnO bulk semiconductor samples are performed.

Heterojunctions of CuInSe2 (CIS) nanowires with cadmium sulfide (CdS) were fabricated demonstrating for the first time, vertically aligned nanowires of CIS in the conventional Mo/CIS/CdS stack. These devices were studied for their material and electrical characteristics to provide a better understanding of the transport phenomena governing the operation of heterojunctions involving CIS nanowires. Removal of several key bottlenecks was crucial in achieving this. For example, it was found that to fabricate alumina membranes on molybdenum substrates, a thin interlayer of tungsten had to be inserted. A qualitative model was proposed to explain the difficulty in fabricating anodized aluminum oxide (AAO) membranes directly on Mo. Experimental results were used to corroborate this model. Subsequently, a general procedure to use any material that can be deposited using sputtering or evaporation as a back contact for nanowires grown using AAO templates was developed. Experimental work to demonstrate this by transferring thin AAO templates onto flexible Polyimide (PI) substrates was performed. This pattern transfer approach opens doors for a wide variety of applications on almost any substrate. Any material that can be deposited by physical means can then be used as a back contact. Electron-beam induced deposition using a liquid precursor (LP-EBID) was used to selectively grow preconceived patterns of compound semiconductor (CdS) nanoparticles. Stoichiometric CdS nanoparticle patterns were grown successfully using this method. They were structurally and optically characterized indicating high purity deposits. This approach is promising because it marries the precision of e-beam lithography with the versatility of solution based deposition methods.

Solar photovoltaic modules provide clean electricity from sunlight but will not be able to compete on an open market until the cost of the electricity they produce is comparable to that produced by traditional methods. At present, modules based on crystalline silicon wafer solar cells account for nearly 90% of photovoltaic production capacity. However, it is anticipated that the ultimate cost reduction achievable for crystalline silicon solar cell production will be somewhat limited and that thin film solar cells may offer a cheaper alternative in the long term. The highest energy conversion efficiencies reported for thin film solar cells have been for devices based around chalcopyrite Cu(In, Ga)(Se, S)2 photovoltaic absorbers. The most efficient Cu(In, Ga)(Se, S)2 solar cells contain absorber layers deposited by vacuum co-evaporation of the elements. However, the cost of ownership of large area vacuum evaporation technology is high and may be a limiting factor in the cost reductions achievable for Cu(In, Ga)(Se, S)2 based solar cells. Therefore, many alternative deposition methods are under investigation. Despite almost thirty companies being in the process of commercialising these technologies there is no consensus as to which deposition method will lead to the most cost effective product. Non-vacuum deposition techniques involving powders and chemical solutions potentially offer significant reductions in the cost of Cu(In, Ga)(Se, S)2 absorber layer deposition as compared to their vacuum counterparts. A wide range of such approaches has been investigated for thirty years and the gap between the world record Cu(In, Ga)(Se, S)2 solar cell and the best devices containing non-vacuum deposited absorber layers has closed significantly in recent years. Nevertheless, no one technique has demonstrated its superiority and the best results are still achieved with some of the most complex approaches. The work presented here involved the development and investigation of a new process for performing one of the stages of non-vacuum deposition of Cu(In, Ga)(Se, S)2 absorber layers. The new process incorporates copper into an initial Group III-VI precursor layer, e.g. indium gallium selenide, through an ion exchange reaction performed in solution. The ion exchange reaction requires only very simple, low-cost equipment and proceeds at temperatures over 1000°C lower than required for the evaporation of Cu under vacuum. In the new process, indium (gallium) selenide initial precursor layers are immersed in solutions containing Cu ions. During immersion an exchange reaction occurs and Cu ions from the solution exchange places with Group III ions in the layer. This leads to the formation of an intimately bonded, laterally homogeneous copper selenide – indium (gallium) selenide modified precursor layer with the same morphology as the initial precursor. These modified precursor layers were converted to single phase chalcopyrite CuInSe2 and Cu(In, Ga)Se2 by annealing with Se in a tube furnace system. Investigation of the annealing treatment revealed that a series of phase transformations, beginning at low temperature, lead to chalcopyrite formation. Control of the timing of the Se supply was demonstrated to prevent reactions that were deemed detrimental to the morphology of the resulting chalcopyrite layers. When vacuum evaporated indium (gallium) selenide layers were used as initial precursors, solar cells produced from the absorber layers exhibited energy conversion efficiencies of up to 4%. While these results are considered promising, the devices were characterised by very low open circuit voltages and parallel resistances. Rapid thermal processing was applied to the modified precursor layers in an attempt to further improve their conversion into chalcopyrite material. Despite only a small number of solar cells being fabricated using rapid thermal processing, improvements in open circuit voltage of close to 150mV were achieved. However, due to increases in series resistance and reductions in current collection only small increases in solar cell efficiency were recorded. Rapid thermal processing was also used to demonstrate synthesis of single phase CuInS2 from modified precursor layers based on non-vacuum deposited indium sulphide. Non-vacuum deposition methods provide many opportunities for the incorporation of undesirable impurities into the deposited layers. Analysis of the precursor layers developed during this work revealed that alkali atoms from the complexant used in the ion exchange baths are incorporated into the precursor layers alongside the Cu. Alkali atoms exhibit pronounced electronic and structural effects on Cu(In, Ga)Se2 layers and are beneficial in low concentrations. However, excess alkali atoms are detrimental to Cu(In, Ga)Se2 solar cell performance and the problems encountered with cells produced here are consistent with the effects reported in the literature for excess alkali incorporation. It is therefore expected that further improvements in solar cell efficiency might be achieved following reformulation of the ion exchange bath chemistry.

Miniaturisation of electronic and optoelectronic devices have enabled the realization of system-on-a-chip technology in modern image sensors, where the photo sensor arrays and the corresponding signal processing circuitry are monolithically integrated in a single chip. Apart from intrinsic advantages, the drive towards miniaturisation has been further fuelled by the exotic properties exhibited by semiconductor materials at the nano scale. As the dimension of the material is gradually reduced from the bulk, interesting physical and chemical properties begin to emerge owing to the increased confinement of charge carriers in different spatial dimensions. Solution-processed optoelectronics have revolutionised the field of device physics over recent years due to the superior performance, ease of processing, substrate flexibility, cost-effective production of large-area devices and other advantages associated with the technique. In the present work, solution-processed photo detectors have been fabricated on SiO2/Si substrate facilitating the ease of integration with conventional silicon CMOS technology. The present thesis deals with the successful exploitation of most common point defects in semiconductor nanostructures to reduce the overlap of hole wave function with the envelop wave function of the ground state electron to improve photoconduction. As a result of the investigation process, successful strategies have been devised for the improvement of photoconduction by engineering the defect states. In the first study, the intrinsic copper vacancies and the capping agent thiol have been employed to trap photo holes in photo detectors based on copper indium selenide nanoparticles, thereby allowing the photoelectrons to transit the device. In the second study, the optical excitation of charge carriers into the defect-related band originating from oxygen vacancies further raises the photoconductivity of molybdenum trioxide nanobelts based photodetectors. In the third study, the absence of photoconductivity in zinc selenide based quantum dots has been attributed to the radiative recombination of photogenerated carriers at the donor-acceptor states caused by the self-compensation of point defects in the dots. In the final study, the crucial role of the energy depth of trap states in determining the carrier relaxation dynamics (temporal response) of the photodetector based on SnO2 nanowires has been discussed in detail. .