Cette thèse porte sur l'élaboration et la caractérisation des grilles métalliques en TiN, aluminium et lanthane pour les technologies CMOS gate-first à base d'oxyde high-k HfSiON. L'effet de l'épaisseur et de la composition des dépôts métalliques a été caractérisé sur les paramètres de la technologie 32/28nm. Ces résultats ont été reliés à une variation de travail de sortie au vide du TiN, à des dipôles induits par l'Al et le La à l'interface HfSiON/SiON et à leur diminution aux petites épaisseurs de SiON (roll-off). Nous avons montré que l'aluminium déposé sous forme métallique dans le TiN cause une diminution de son travail de sortie, opposée au faible dipôle positif induit par l'Al. Nous avons évalué l'influence du roll-off pour ces différents métaux et mis en évidence pour la première fois sa forte dépendance avec l'épaisseur de lanthane déposée. Le développement de procédés de dépôt de TiN, Al, La a permis d'accroître les bénéfices de ces matériaux pour la technologie CMOS 32/28nm. / This thesis is about the manufacturing and the characterization of TiN, aluminum and lanthanum metal gate for high-k based 32/28nm CMOS technologies. The effect of metal gate layer thickness and composition has been characterized on 32/28nm technology parameters. These results have been related to a change in the TiN vacuum work function, to Al- and La- induced dipoles at the HfSiON/SiON interface or their lowering on thin SiON (roll-off). We have shown that metallic aluminum introduced in the TiN metal gate causes a work function lowering, opposed to the weak Al-induced dipole. We have evaluated the roll-off influence for theses different metals. For the first time we report the strong roll-off dependence with the deposited lanthanum thickness. Newly developed TiN, Al, La deposition processes have brought benefits for the CMOS 32/28nm technology

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No. of bitstreams: 1 oliveira_ma_dr_ilha.pdf: 7398841 bytes, checksum: acb7f174226b997e4c4c4192ff05e406 (MD5) Previous issue date: 2017-08-18 / Coordenação de Aperfeiçoamento de Pessoal de Nível Superior (CAPES) / O titanato de bário (BaTiO3, BT) é um material ferroelétrico com diversas aplicações, dentro do mercado de componentes eletrônicos, devido às excelentes propriedades físicas que manifesta, em relação a outros sistemas ferroelétricos, continuando a atrair durante várias décadas o interesse científico e comercial. Dentre o grande número de trabalhos sobre o sistema BT reportados na literatura muitos são associados à vasta gama de aplicações para a indústria eletro-eletrônica, dentre as quais se destacam o uso em dispositivos para capacitores, termistores, entre outros. A dopagem do BaTiO3 com íons doadores implica na mudança de algumas propriedades físicas, que conduzem a comportamentos anómalos em determinados parâmetros físicos, cuja natureza ainda não tem sido muito esclarecida, embora muitos trabalhos tenham se empenhado para tentar justificar tais efeitos. Neste contexto, neste trabalho, as propriedades físicas do sistema BaTiO3 serão investigadas considerando a adição de elementos doadores, nos sítios A e B da estrutura. Em particular, os íons de gadolínio (Gd3+) e nióbio (Nb5+) serão usados como modificadores da estrutura perovskita em substituição dos íons de bário (Ba2+) e titânio (Ti4+) nos sítios A e B, respectivamente, considerando as fórmulas químicas Ba1-xGdxTiO3 e BaTi1-x NbxO3 (sendo x = 0.001, 0.002, 0.003, 0.004 e 0.005). As propriedades estruturais e microestruturais foram investigadas à temperatura ambiente, enquanto as propriedades dielétricas e elétricas foram analisadas em uma ampla faixa de temperatura e frequência. Em particular, os efeitos condutivos proporcionados pela dopagem dos íons doadores em diferentes sítios cristalográficos, cujo estudo ainda não foi reportado na literatura, foram cuidadosamente investigados para melhor compreender os fatores que influenciam e determinam as propriedades semicondutoras de tais materiais, visando aprimorar no entendimento a nível microscópico e macroscópico dos fatores que influenciam e originam os mecanismos condutivos nestes materiais, fatores determinantes para uma posterior aplicação na indústria eletroeletrônica. Os materiais foram obtidos a partir do método de Pechini (ou Método dos Precursores Poliméricos), bem conhecido na literatura por ser um método muito eficiente, quando comparado com métodos convencionais para síntese de materiais policristalinos, pois apresenta inúmeras vantagens, tais como a síntese em baixas temperaturas, baixa contaminação, maior controle estequiométrico, alta homogeneização e possibilidade de obtenção de pós em escala nanométrica. / Barium titanate (BaTiO3, BT) is a ferroelectric material with several applications for the electronic components market, due to its excellent physical properties when compared to other ferroelectric systems. So that, BT continues up today attracting the scientific and commercial interest for several decades. Among the large number of papers on the BT system reported in the literature, many are associated with the wide range of applications in the electric and electronic industry, where the use in capacitors, thermistors and other devices stands out. By doping BaTiO3 with donor ions implies in the change of some physical properties leading to abnormal behaviors in certain physical parameters. The nature of these changes is not yet very clear, although many papers have been reported trying to justify such effects. In this context, this work aims the investigation of the physical properties of the BaTiO3 system, considering the addition of donor elements in the A- and B-sites of the structure. In particular, the gadolinium (Gd3+) and niobium (Nb5+) ions will be used as modifiers on the perovskite structure by substitution of barium (Ba+2) and titanium (Ti+4) ions in the A- and B-site, respectively, considering the Ba1-xGdxTiO3 and BaTi1-x NbxO3 ( where x = 0.001, 0.002, 0.003, 0.004 and 0.005). The structural and microstructural properties were investigated at room temperature, while the electrical and dielectric properties were analyzed in a wide range of temperature and frequency. Particularly, the conductive effects provided by the doping with donor ions in different crystallographic sites, whose study has not yet been reported in the literature, were carefully investigated to better understand the factors that influence and determine the semiconductor properties of such materials. The objective is to enhance the understanding of the factors that influence and originate the conductive mechanisms in these materials at the microscopic and macroscopic level, therefore determining factors for a subsequent application in the electronics industry. The materials were obtained from the Pechini method (known as the Polymeric Precursors Method). This method is well known in the literature because it is a very efficient method, when compared with conventional methods for synthesis of polycrystalline materials, because of the numerous advantages it presents, such as the synthesis at low temperatures, low contamination, greater stoichiometric control, high homogenization and possibility of obtaining nanoscale powders.

Orientador: Aldo Eloizo Job / Banca: Marcos Augusto de Lima Nobre / Banca: Marcelo Ornaghi Orlandi / O Programa de Pós-Graduação em Ciência e Tecnologia de Materiais, PosMat, tem caráter institucional e integra as atividades de pesquisa em materiais de diversos campi da Unesp / Resumo: O objetivo deste trabalho foi estudar "efeitos de escala e tamanho" através de medidas de permissividade dielétrica de partículas nanométricas e/ou nanoestruturadas do óxido policátion niobato de potássio dopado com estrôncio (K'Sr IND. 2' N'b IND. 5' 'O IND. 15'), um óxido ferroelétrico da família tetragonal tungstênio bronze (TTB). A determinação da constante dielétrica de nanopartículas foi realizada através da técnica de mistura. Nesta técnica, nanopartículas de permissividade dielétrica desconhecidas são dispersas em um meio de permissividade dielétrica conhecida. A partir da resposta dielétrica da mistura a permissividade dielétrica das nanopartículas foram calculadas utilizando modelagem numérica via circuitos elétricos equivalentes. A fase K'Sr IND. 2' N'b IND. 5' 'O IND. 15, foi preparada por rota química (método poliol modificado), a temperatura de calcinação necessária à obtenção de nanopartículas foi otimizada e partículas nanoestruturadas de K'Sr IND. 2' N'b IND. 5' 'O IND. 15' monofásico foram avaliadas. A caracterização estrutural foi realizada utilizando as técnicas de difratometrica de raiox x (DRX), espectroscopia vibracional de absorção na região do infravermelho (FTIR) e ultravioleta visível (UV/vis) a partir das quais se avaliaram os parâmetros de rede, cristalinidade relativa, tamanho médio de cristalito, volume da cela unitária e energia de gap. Utilizando a técnica de espectroscopia de impedância entre 5 Hz e 3 MHz foram estudadas as propriedades dielétricas das amostras através de medidas de permissividade confirmando a existência de ferroeletricidade nas amostras e foi identificado o efeito de tamanho nas propriedades dielétricas das nanopartículas. / Abstract: This work aimed the study of "size effect" through permittivity measurements of nanometric particles and/or nanostructured of niobate oxide K'Sr IND. 2' N'b IND. 5' 'O IND. 15', a ferroelectric oxide belonging to the tetragonal tungsten bronze family (TTB). Determination of nanoparticles dielectric constant was done using the mixture technique. In this technique, nanoparticles of unknown dielectric permittivity are dispersed in a medium of know dielectric permittivity. From the dielectric response of the mixture, the dielectric permittivity of the nanoparticles is calculated using numerical modeling by means of equivalent circuits. The K'Sr IND. 2' N'b IND. 5' 'O IND. 15' phase was prepared using a chemical route (polyol modified method) and the optmization of the temperature calcination was performed aiming to obtain nanoparticles and the resulting nanostructured particles were evaluated. The structural characterization was carried out by X-ray diffraction (XRD), infrared absorption spectroscopy (FTIR) and UV-Vis spectroscopy allowing the evaluation of cell parameters, relative crystallinity and crystallite size, unitary cell volume and gap energy. The impedance spectroscopy technique in the range from 5 Hz to 3 MHz to study dielectric properties of samples was used. The presence of ferroelectric phase in samples was confirmed and the size effect was identified on nanoparticles. / Mestre

Nesta pesquisa é feita uma análise da interação do campo eletromagnético gerado por microcomputadores portáteis com o corpo humano, operando na faixa de radiocomunicações WI-FI, através da avaliação da taxa de absorção especifica (SAR). Os modelos de corpo humano heterogêneos utilizados são de um adulto de 34 anos e duas crianças de 6 e 11 anos os quais foram analisados em varias situações típicas de exposição à presença de um microcomputador portátil. Nas simulações dos cenários para avaliar a dosimetria foi utilizada a versão comercial do programa chamado SEMCAD X que é baseado no Método das Diferenças Finitas no Domínio no Tempo (FDTD). Da análise das simulações do modelo de corpo inteiro, o único resultado que ultrapassou a recomendação do (FCC, 1997) para 1 g de tecido foi na situação em que o microcomputador portátil, com a antena dipolo na parte posterior do teclado, está no colo do modelo de 34 anos. Numa segunda etapa, é feito um estudo teórico experimental da intensidade do campo elétrico gerado por dispositivos geradores de sinais Wi-Fi comerciais. Analisa-se à propagação de ondas eletromagnéticas através de paredes, utilizando uma antena monocone não ressonante e de banda larga, mediante o estudo e análise da sua taxa de onda estacionária. As medidas visam avaliar que projetando uma parede com uma espessura determinada consegue a propagação dos campos eletromagnéticos evitando reflexões e pontos quentes que possam produzir uma taxa de absorção maior no corpo humano presente nestes ambientes, além de caracterizar as propriedades dielétricas destas paredes. / This research analyses the interaction of the electromagnetic field generated by portable computers with the human body, operating in the range of radio Wi-Fi, by evaluating the specific absorption rate (SAR). The heterogeneous human body models used were those of a 34 years old adult and two children aged 6 and 11, were analyzed under various standard conditions of exposure to the presence of a portable microcomputer. The commercial version of SEMCAD X which is based on the Finite Difference Method in the Time Domain (FDTD) method was used in the simulations of the scenarios, to evaluate the dosimetry. The analysis of the simulation of the whole body model, the only result that exceeded the recommendation of the (FCC, 1997) for 1g of tissue was the simulation in which the dipole antenna on the back of the keyboard of the laptop resting on the lap of the 34-year old model. In the second stage, a theoretical experimental study was made of the intensity of the electric field created from Wi-Fi band signals generating devices. Subsequently, an analysis is made of the propagation of the electromagnetic waves through walls, using a non-resonant broadband monocone antenna by analyzing its voltage standing wave ratio (VSWR). The measures aim to assess that designing a wall with a given thickness, propagation of electromagnetic waves can be achieved, thus avoiding reflections and hot spots that can lead to higher SAR in the human body present in these environments, moreover to characterize the dielectric properties of these walls.

abstract: There is a pervasive need in the defense industry for conformal, low-profile, efficient and broadband (HF-UHF) antennas. Broadband capabilities enable shared aperture multi-function radiators, while conformal antenna profiles minimize physical damage in army applications, reduce drag and weight penalties in airborne applications and reduce the visual and RF signatures of the communication node. This dissertation is concerned with a new class of antennas called Magneto-Dielectric wire antennas (MDWA) that provide an ideal solution to this ever-present and growing need. Magneto-dielectric structures (μr>1;εr>1) can partially guide electromagnetic waves and radiate them by leaking off the structure or by scattering from any discontinuities, much like a metal antenna of the same shape. They are attractive alternatives to conventional whip and blade antennas because they can be placed conformal to a metallic ground plane without any performance penalty. A two pronged approach is taken to analyze MDWAs. In the first, antenna circuit models are derived for the prototypical dipole and loop elements that include the effects of realistic dispersive magneto-dielectric materials of construction. A material selection law results, showing that: (a) The maximum attainable efficiency is determined by a single magnetic material parameter that we term the hesitivity: Closely related to Snoek's product, it measures the maximum magnetic conductivity of the material. (b) The maximum bandwidth is obtained by placing the highest amount of μ" loss in the frequency range of operation. As a result, high radiation efficiency antennas can be obtained not only from the conventional low loss (low μ") materials but also with highly lossy materials (tan(δm)>>1). The second approach used to analyze MDWAs is through solving the Green function problem of the infinite magneto-dielectric cylinder fed by a current loop. This solution sheds light on the leaky and guided waves supported by the magneto-dielectric structure and leads to useful design rules connecting the permeability of the material to the cross sectional area of the antenna in relation to the desired frequency of operation. The Green function problem of the permeable prolate spheroidal antenna is also solved as a good approximation to a finite cylinder. / Dissertation/Thesis / Ph.D. Electrical Engineering 2013

abstract: Estimation of complex permittivity of arsenic-doped silicon is the primary topic of discussion in this thesis presentation. The frequency that is of interest is 2.45 GHz, frequency typically used in conventional microwave ovens. The analysis is based on closed-form analytical expressions of cylindrical symmetry. A coaxial/radial line junction with the central conductor sheathed in dielectric material, which is As-doped silicon in this case, are analyzed. Electrical and magnetic field equations governing the wave propagation in this setup are formulated by applying the necessary boundary conditions. Input admittance is computed using the fields in the device and reflection coefficient is calculated at the input. This analytical solution is matched to the reflection coefficient acquired by experiments conducted, using VNA as the input source. The contemplation is backed by simulation using High Frequency Structural Simulator, HFSS. Susceptor-assisted microwave heating has been shown to be a faster and easier method of annealing arsenic-doped silicon samples. In that study, it was noticed that the microwave power absorbed by the sample can directly be linked to the heat power required for the annealing process. It probes the validity of the statement that for arsenic-doped silicon the heating curve depends only on its sheet properties and not on the bulk as such and the results presented here gives more insight to it as to why this assumption is true. The results obtained here can be accepted as accurate since it is known that this material is highly conductive and electromagnetic waves do not penetrate in to the material beyond a certain depth, which is given by the skin depth of the material. Hall measurements and four-point-probe measurements are performed on the material in support of the above contemplation. / Dissertation/Thesis / M.S. Electrical Engineering 2014

Nesse trabalho foram fabricados filmes finos de TiO2 por RF magnetron sputtering reativo sobre substrato de silício (1 0 0). A pressão parcial do oxigênio na câmara foi variada de 5 a 100% em relação ao argônio. Após a deposição os filmes foram submetidos a tratamento térmico em atmosfera de oxigênio. A estequiometria dos filmes e o perfil de profundidade foram obtidos por RBS. A estrutura cristalina foi obtida por XRD. As propriedades ópticas foram obtidas por interferometria e reflectância e as elétricas por meio das curvas C-V. Os valores de espessura dos filmes sem tratamento térmico aumentaram aproximadamente 41% com o aumento do oxigênio na câmara de deposição. Essa variação está ligada ao aumento da eficiência do sputtering do alvo. Os índices de refração dos filmes sem tratamento térmico se mantiveram dentro de um intervalo de aproximadamente 2,3 a 2,4. A diminuição do band gap com o tratamento térmico é consequência da mudança de fase cristalográfica de anatase para rutila. A estequiometria TiOx dos filmes antes do tratamento térmico apresentaram valores de x entre 2,0 e 2,4. A espessura em TFU dos filmes aumentou com o percentual de oxigênio na câmara. As amostras que receberam tratamento térmico apresentaram difusão de titânio na interface do substrato e incorporação de oxigênio no filme. Os valores da constante dielétrica aumentaram com o percentual de oxigênio na câmara, em contraposição com o efeito do tratamento térmico que diminuiu o valor. Todos os resultados observados são coerentes do ponto de vista da mudança de fase anatase rutila e aumento do percentual de oxigênio na câmara. / In this work thin films of TiO2 were produced by reactive RF magnetron sputtering on silicon substrate (1 0 0). The oxygen partial pressure in the chamber was varied from 5 to 100% in relation to argon. After deposition the films were submitted to thermal treatment under an oxygen atmosphere. The stoichiometry of the films and the depth profile were obtained by RBS. The crystal structure was obtained by XRD. Its optical properties were obtained by interferometry and reflectance and the electrical were obtained by means of the C-V curves. The thickness values of films without heat treatment increased approximately 41% with the increase of oxygen in the deposition chamber. This variation is linked to the increased sputtering efficiency of the target. The refractive indexes of films without heat treatment remained within a range of about 2.3 to 2.4. The decrease of the band gap with the heat treatment is a consequence of the change of crystallographic phase from anatase to rutile. The TiOx stoichiometry of the films before the heat treatment showed values of x between 2.0 and 2.4. The TFU thickness of the films increased with the percentage of oxygen in the chamber. The samples that received heat treatment shows diffusion of titanium at the interface of the substrate and incorporation of oxygen in the film. The values of the dielectric constant increased with the percentage of oxygen in the chamber, as opposed to the effect of the thermal treatment that decreased the value. All the results observed are consistent from the point of view of the anatase - rutile phase transition and the increase in the oxygen percentage in the chamber.

Na condução por saltos dispersiva, os portadores de carga são caracterizados por tempos de residência não exponenciais. Como uma conseqüência, efeitos hereditários aparecem e o problema deve ser conduzido no espaçõ de Laplace. Distribuições dielétricas conhecidas e algumas outras foram usadas como possíveis funções capazes de descrever o meio desordenado. Um estudo cuidadoso de seus espectros de freqüência foi realizado. O método de inversão de Widder truncado foi desenvolvido para possibilitar a volta do espaço de Laplace para o do tempo real. Dois tipos de problemas práticos foram abordados: condução dispersiva na qual o campo elétrico das cargas móveis pode ser desprezado e o caso de carga espacial para o qual essa aproximação não pode ser feita. Duas configurações de interesse foram escolhidas: decaimento do potencial de superfície de amostras carregadas por descarga corona e a subida do potencial no carregamento por corrente constante. / Dispersive conductive process are characterized by non-exponential residence times of the hopping carrier. As a consequence, hereditary effects appear and the problem must be conducted in the Laplace space. A bunch of known dielectric distributions functions and others were used as possible functions describing the disordered medium. A careful study of their frequency spectrum was carried out. The truncate Widder inversion was developed in order to allow returning from the Lapace to the real time space. Two kind of practical problems were studied: dispersive conduction in which the electric field of the mobile charge may be neglected and the space charge ones when that approximation cannot be made. Two configurations of interest were selected: the corona discharge potential decay and the constant current potentinal build-up.