Diamond-liked carbon (DLC) film is an important material and has many application in industry. Recently doping impurity into the DLC to change the properties of DLC thin film is a research topic attracted scientists. In this thesis, DLC films were deposited by plasma-enhanced chemical vapor deposition (PECVD) on the Si wafer and glass. Acetylene was used as the source of carbon, and nitrogen was doped in DLC need too dopants of grow N2 and NH3. The growth mechanism and differences of the nitrogen doped DLC films were studied by methods of NK measurement, SEM and nano indentation. The analysis of nano indentation showed that the hardness and Young¡¦s Module decreased with increasing N2 flow rate. However, for increased NH3 a flow rate, the hardness and Young¡¦s Module of DLC were increased. The characteristic peaks of nitrogen doped DLC in the FTIR transmittance spectra were studied, sp2 C=H bond(2945 cm-1), sp3 C-H bond(2910 cm-1), and also the C¡ÝN (2200cm-1)and C=N bond(1625cm-1) are observed in DLC. The results of FTIR shows nitrogen was doped into DLC successfully. The DLC thin films thickness was determined by the NK analysis, and it is found the deposition rate of DLC was increased with the increasing flow rate of N2. However, for increased NH3 flow rate, the DLC deposition rate was decreased. From SEM, micrographs the NH3 doped DLC yielded rough morphology. The surface of N2 doped DLC thin film, revealed smoother. A growth mechanism of diamond with different dopant was proposed and explained the properties of DLC thin film with different deposition condition.When N2 was used as dopant source, the N2+ ions were induced by plasma and attracted upward due to the RF self-bias voltage. Therefore ,the surface of thin film was not bombarded due to N2+ ions. On contrast, when the NH3 was used as dopant source, the NH2- ions were produced and distracted downward by the RF self-bias voltage. And then the surface of the thin film was etched by the NH2- ions. Form the XPS analysis, the composition of sp3 C-C(285.4 eV) and sp3 C-N (287.7 eV)were decreased with increased N2 flow rate.However, the composition of sp3 C-C and SP3 C-N were increased with decreasing the NH3 flow rate. The composition of nitrogen in the DLC film increased with higher N2 flow rate. The number of sp2 bond was increased and the hardness was decreased with higher amount of nitrogen in the DLC film. This result is consistent with the nano indentation,FTIR analysis and explained by the ionic transportation growth mechanism model.

In this study, the characteristics of Nickel-doped LPD-TiO2 films on silicon substrate were investigated. In our experiment, we do some measurement about physical, chemical and electrical properties for undoped and Nickel-doped LPD-TiO2 films and discussed with them. The TiO2 film thickness was characterized by field emission scanning electron microscopy ( FE-SEM ), structure was characterized by X-ray diffraction (XRD), chemical properties was characterized by X-ray photoelectron spectroscopy (XPS), Fourier transform infrared spectroscopy (FT-IR) and electrical properties was characterized by leakage current: current-voltage (B1500A) and dielectric constant: capacitance-voltage (4980A). For the electrical property improvements, we investigated the Ni-doped LPD-TiO2 films by the post-anneal treatments in nitrogen, oxygen and nitrous oxide ambient. For nickel doping, the nickel chloride was used as the doping solution and the electrical characteristics were improved. After thermal annealing in nitrous oxide at 700 oC, the dielectric constant of polycrystalline titanium oxide film is 29 and can be improved to 94 with nickel doping.

Ultrafast time-resolved pump-probe (TRPP) apparatus has been applied to study the carrier dynamics of Si-doped InN thin films grown buffer by molecular beam expitaxy with and without a low-temperature growth GaN buffer layer. The peak of the PL has been found to increase from 0.7 to 0.8 eV with the back ground density. The total decay rates as a function of the delay time were obtained by the density-dependent TRPP peak intensity and the time-resolved TRPP signals. The total decay rates were interpreted as the sum of radiative and nonradiative recombination. The Shockley-Read-Hall decay rate derived from the TRPP signal at low photoexccitation density was found to increase with the doping density. At low concentration, the Auger recombination is not effective. The dominant recombination mechanism at room temperature is the Shockely-Read-Hall recombination.

The roles of hydrogen induced defects in pure ZnO has been studied extensively. However, in a transition metal, such as Co, doped ZnO thin films the effect of hydrogen in electric conduction and magnetic coupling is still unclear and needs further study. Recently model predicts that hydrogen can be a shallow donor as well as an agent to induce ferromagnetism coupling between two adjacent Co ions which substitute the Zn sites at room temperature in a ZnO sample with a high Co doping ratio. However, the experimental supports is rare. In this study, Co-doped(5%) ZnO films are grown by a RF-magnetron sputtering system on glass substrate at room temperature. The growth condition is fixed for RF power in 200W, working press of 70 mtorr and various mixing ratio of H2/Ar+H2 gas. The crystal structure, electric and optical properties and the influence of vacuum annealing on the samples are studied. In this research, we found that the doping of hydrogen in Co-doped ZnO thin films truly increases the electric conductivity which is proportional to the H2/(Ar+H2) ratio. When the ratio of hydrogen is low, the (002) peak taken by a Glazing Angle X-ray Diffractometer dominates, while increasing hydrogen ratio other diffraction peaks appear, indicating an enhancement of crystal structure in all directions, and grain sizes and unit cell volume decrease. From the optical transmittance measurement, it is found that the color of films turned into metallic like and the optical band gap increases linearly with H2 ratio which can be attributed to the Burstein-Moss effect that corresponds to the increasing of carriers in the conduction band by doping of H2. The transmittance data provides the information of the ratio of crystalline and amorphous, which can also be correlated to the AFM results. When the H2 ratio is higher than 30%, more crystals and larger sizes of grains were formed in the films, such that carriers did not need to pass grain boundaries so frequently and experienced less scattering that was actually improve the electric conductivity. The electric conductivity can be even improved by post annealing in H2 environment. Moreover, the Magnetic circular dichroism (MCD) measurement shows that the Co2+ ions does truly substitute on Zn sited in Td symmetry during thin film deposition. The resistance measurement as a function of temperature found the hydrogenated Co-doped thin films are semiconductor conductive. More works are needed to determine the magnetization, identify second phases and Vo by SQUID and X-ray photoelectron spectroscopy.

An uniform titanium oxide film was grown on indium tin oxide/glass substrate with the aqueous solutions of ammonium hexafluoro-titanate and boric acid. The as-deposition titanium oxide film shows good electrochromic property because of fluorine passivation on defects and dangling bonds. The transmittance of as-grown titanium oxide on indium tin oxide/glass with a thickness of 270 nm is about 85% at the wavelength of 550 nm. By 50 times electrochromic cycling test, the transparency ratio of TiO2 film is kept at 45% between fully colored state and fully bleached state at the wavelength of 550 nm. Under ultraviolet illumination, the growth of titanium oxide film grown is enhanced. The root mean squared value of surface roughness is improved from 3.723 to 0.523 nm. Higher fluorine concentration from (NH4)2TiF6 passivate defects and dangling bonds of titanium oxide during the growth. After 50 times electrochromic cycling test, the transparency ratio UV-TiO2 is improved from 37.5% to 42.4% at the wavelength of 550 nm. The electrical characteristics of nickel-doped titanium oxide films on p-type (100) silicon substrate by liquid phase deposition were investigated. For nickel doping, the nickel chloride was used as the doping solution and the electrical characteristics were improved. After thermal annealing in nitrous oxide at 700 oC, the dielectric constant of polycrystalline titanium oxide film is 29 and can be improved to 94 with nickel doping. Uniform nickel oxide film was grown on a conducting glass substrate with the aqueous solution of saturated NiF2¡E4H2O solution and H3BO3. The quality of NiO is improved after thermal annealing at 300 oC in air from the decrease of oxygen vacancy and better F ion passivation on defects and dangling bonds. The transmittance of as-deposited NiO/ITO/glass with a thickness of 100 nm is about 78% and improved to 88% after annealing at the wavelength of 550 nm. By the electrochromic cycling test 50 times on annealed NiO film, the transparency ratio is kept at 48% between fully colored state and fully bleached state at the wavelength of 550 nm. By the memory time test, the annealed LPD-NiO film has shorter memory time. The growth of nickel oxide film grown on indium-tin oxide/glass substrate by liquid phase deposition is enhanced under ultraviolet photo-irradiation was studied. a-Ni(OH)2 dominates the composition of as-grown NiO film. After thermal treatment at 300 oC,a-Ni(OH)2 is transformed into NiO. For thermally treated NiO under ultraviolet photo-irradiation, the recrystallization and the colored and bleached transmittance after 50 times electrochromic test were improved. Both improvements come from fluorine passivation. Transparent and conductive thin films consisting of p-type nickel oxide (NiO) semiconductors were prepared by liquid phase deposition. A resistivity of 8 x 10-1 -cm was obtained for NiO films prepared at liquid phase deposition. The transmittance of NiO is almost 70 % in the 550 nm wavelength was obtained for a 384.3 nm thick NiO film.

Using low-temperature (650¢J) Ce3+:YAG doped glass (LTCeYDG) phosphor layer instead of conventional Ce:YAG doped silicone phosphor layer applied to high-power phosphor-converted white-light-emitting diodes (PC-WLEDs) is demonstrated.The glass transition temperature (Tg) of silicone is 150¢J but glass is 750¢J,it shows the glass were employed in high power LED than silicon. The uniformity of phosphor powder doped glass is an important item to discriminates between good and bad. Quantize the uniformity of glass phosphor by image processing software and Distribution Uniformity (Du). Calculate the uniformity of phosphor powder mix with glass powder which has different particle size and measurement optical properties of glass phosphor which has different uniformity. The Du of glass phosphor are 64.46%, 84.65%, 85.24% , 91.85% and the quantum efficiency are 18.49%, 28.31%, 29.73%, 28.56% ,respectively. By using Ceramic tube and low temperature glass powder sintering glass phosphor is a new fabrication. Compare with last fabrication, new fabrication reduce 100¢Jfabrication temperature from 750¢J to 650¢J, 70% material savings and high luminous efficiency. The quantum efficiency and lumen per watt were improved about 7 percentage point from 22.3% to 29.1% and 4.2 lm/W from 36.4 lm/W to 40.68 lm/W. We used the XRD to analyze the glass phosphor of last fabrication and new fabrication and the results show that the higher thermal stress destroys the structure of YAG, lower fabrication temperature used to get higher luminous efficiency.

The resistance random access memory (RRAM) is one of the most popular of the next generation memories with the high operating speed, reliability and the smallest miniature size. RRAM has metal-insulator-metal structure that can greatly reduce the difficulty of entry, but the biggest problem is how to choose the insulator. We selected silicon-based materials to match the intergrated circuits manufacturing process. In this work, sputtering titanium doping in the silicon oxide thin film has a stable characteristic of resistance switching. By material analyzing, we found that supercritical carbon dioxide fluid (SCCO2) treatment can passivate the silicon oxide defect and the self-reduction of titanium oxide, but it also brought OH group into our thin film. So we observed the interface type characteristic of resistance switching. Using constant voltage sampling experiment extract the reaction rate constant (k) and the active energy, prove that the reaction is caused by OH injection. Double-layer structure with titanium-doped and carbon-doped silicon oxide RRAM promote lower operating current by hopping conduction, which is caused by graphite oxide doping. The Space-Charge Limited Current mechanism for high limited current is proven by COMSOL electric field simulation.

In this study,The bottom electrode(TiN),middle insulator(Hf:SiOx),and top electrode(Pt) were deposited respectively by sputtering technique for fabricating the RRAM with MIM structure.The mole fraction of hafnium were about 5%.Instead of non-doped SiO2 base device has no switching characteristic,the Hf-doped SiO2 RRAM could be operator over 100 times and resistive state was kept stable over 104 second. In this researches,the double layer structure(Pt/Hf:SiO2/Hf:SiO2(doped N2 and NH3)).The Resistance switching characteristics of double layer structure device has particular I-V characteristics due to the doping of N.The doping of NH3 cause hydrogen plasma treatment on double layer device also bring about particular I-V characteristics. The physical mechanism we had proposed were proof by the Current-Voltage fitting and the material analysis.By control stop-voltage,the double layer structure device can operation by multi-bit. The detail physical mechanism is studied by the stable RRAM device(Ti/HfO2/TiN).In this study,the model of reset process we had proposed were proof by the special measurement methods(Constant-voltage sampling) and the principle of chemical reaction mechanism.

Optical imaging of soft biological tissue is highly desirable since it is nonionizing and provides sensitive contrast information which enables the detection of physiological functions and abnormalities, including potentially early cancer detection. However, due to the diffusive nature of light in soft biological tissue, it is difficult to achieve simultaneously good spatial resolution and good imaging depth with pure optical imaging modalities. This work focuses on the ultrasound-modulated optical tomography (UOT): a hybrid technique which combines the advantages of ultrasonic resolution and optical contrast. In this technique, focused ultrasound and optical radiation of high temporal coherence are simultaneously applied to soft biological tissue. The intensity of the sideband, or ultrasound ‗tagged‘ photons depends on the optical absorption in the region of interest where the ultrasound is focused. Demodulation of the optical speckle pattern yields the intensity of tagged photons for each location of the ultrasonic focal spot. Thus UOT yields an image with spatial resolution of the focused ultrasound — typically submillimeter — whose contrast is related to local optical absorption and the diffusive properties of light in the organ. Thus it extends all the advantages of optical imaging deep into highly scattering tissue. However lack of efficient tagged light detection techniques has so far prevented ultrasound-modulated optical tomography from achieving maturity. The signal-to-noise ratio (SNR) and imaging speed are two of the most important figures of merit and need further improvement for UOT to become widely applicable. In the first part of this work, nonlinear optics detection methods have been implemented to demodulate the ―tagged‖ photons. The most common of these is photorefractive (PR) two wave mixing (TWM) interferometry, which is a time-domain filtering technique. When used for UOT, it is found that this approach extracts not only optical properties but also mechanical properties for the area of interest. To improve on TWM, PR four wave mixing (FWM) experiments were performed to read out only the modulated light and at the same time strongly suppressing the ‗untagged‘ light. Spectral-hole burning (SHB) in a rare-earth-ion-doped crystal has been developed for UOT more recently. Experiments in Tm3 :Y3Al5O12 (Tm:YAG) show the outstanding features of SHB: large angle acceptance (etendue), light speckle processing in parallel (insensitive to the diffusive light nature) and real-time signal collection (immune to light speckle decorrelation). With the help of advanced laser stabilization techniques, two orders of magnitude improvement of SNR have been achieved in a persistent SHB material (Pr^3 :Y2SiO5) compared to Tm:YAG. Also slow light with PSHB further reduces noise in Pr:YSO UOT that is caused by polarization leakage by performing time-domain filtering.

The laser-induced molecular reorientation effect of guest-host dye-doped liquid crystals in isotropic phase has been studied by measuring the signals of optical Kerr effect using pulsed frequency-doubling Nd:YAG laser as a pumping source. The critical behavior near the isotropic-nematic transition has been observed when the temperature approaches to the phase transition of liquid crystal. The relaxation time constant is about several hundreds of ns as the temperature is far above the clearing point of liquid crystals and that is longer than 1500 ns as the temperature is close to the clearing point of liquid crystals. According to Landau¡¦s second phase transition theory, the interaction between liquid crystal molecules will be increased and the nonlinearity effect of liquid crystal will be enhanced when the temperature is near the clearing point of liquid crystal. The relaxation time constant of molecular reorientation is a function of viscosity and temperature of liquid crystal, the relationship can be fitted as£b0*exp(f/T)*(1/T-T*),where £b0 is the viscosity coefficient and T* is the clearing point of the sample. The optical Kerr signal is found to be proportional to the energy density of pumping source. The optical Kerr signal can be sustained as long as 20£gs when the energy density of pumping source reaches to 1J/cm sq. The enhancement of molecular reorientation effect is also observed by increasing the concentration of dye.