Le système antireflet (SAR) est d‟une grande importance pour les cellules photovoltaïques (PV), surtout pour celles de deuxième génération à base de couches minces. Au cours de ce travail de thèse, nous avons cherché à réaliser un SAR à la fois efficace et répondant aux critères de l‟industrie PV en termes de coût de production et de facilité de mise en oeuvre. Pour cela, nous avons particulièrement étudié le dépôt d‟oxynitrures de silicium (SiOxNy), comme élément de base de ces dispositifs. Les films sont élaborés par pulvérisation cathodique réactive radiofréquence à effet magnétron. Notre volonté a été d‟étudier à la fois le procédé de dépôt, les matériaux obtenus ainsi que la formation de dispositifs fonctionnels. Nous avons tout d‟abord présenté les deux voies d‟élaboration des couches minces de SiOxNy: par procédé conventionnel (PC) où les gaz réactifs ne sont pas pulsés, puis par le procédé de gaz réactif pulsé (PGRP). Nous avons aussi croisé une étude expérimentale par Spectroscopie d‟Emission Optique (SEO) et une modélisation du procédé afin de mieux appréhender les interactions des gaz réactifs avec la cible et leur effet sur le procédé. En parallèle, des dépôts ont été réalisés afin de vérifier la capacité de chacune des deux techniques à déposer des SiOxNy avec une gamme variable de compositions. Nous avons ensuite étudié l‟effet des paramètres de pulse de la méthode PGRP à la fois sur la structure, mais aussi sur les propriétés optiques et électriques des couches minces de SiOxNy. Nous avons cherché ici à valider le lien entre structure et indices de réfraction pour ces films. Enfin, pour réaliser un dispositif AR fonctionnel, des systèmes AR ont été tout d‟abord simulés avec un programme de calcul électromagnétique et optimisés grâce à un algorithme génétique. Les systèmes optimisés ont été ensuite déposés et caractérisés. Une réflectivité moyenne (entre 400 et 900 nm) inférieure à 5 % a ainsi été obtenue. / Antireflective systems (ARS) are of great importance for photovoltaic (PV) cells, especially those of second generation based on thin layers. In this work, we have been looking for achieving an ARS not only efficient but also meeting the criteria of the PV industry in terms of production cost and ease of implementation. For this, we particularly studied the deposition of silicon oxynitrides (SiOxNy), as the base materials of these devices. Films were deposited by cathodic reactive radiofrequency sputtering with a magnetron effect. We desired to study not only the deposition process, the obtained materials but also the realization of functional devices. We firstly presented two routes of SiOxNy thin films deposition: by the Conventional Process (CP) where the reactive gases are not pulsed, and by the Reactive Gas Pulsing Process (RGPP). We also combined an experimental study by Optical Emission Spectroscopy (SEO) and process modeling to better understand the reactive gases interactions with the target and their effect on the process. Simultaneously, films depositions were realized to check the potential of each technique to obtain a wide range of silicon oxinitrides composition.Then, we studied the effect of pulse parameters with the RGPP on the structure and also on the optical and electrical properties of SiOxNy thin films. We aimed here to confirm the link between structure and refractive indices for these films. Finally, to achieve a functional AR device, AR systems were firstly simulated with an electromagnetic calculation program and optimized using a genetic algorithm. The optimized systems were then deposited and characterized. An average reflectivity (between 400 and 900 nm) less than 5% was thus reached.

Presented master's thesis is focused on studying electroinsulating epoxy resin-based sealings. It describes the chemical composition, production, properties and measuring methods of basic electric quantities of these materials. The aim of the thesis is to compare several sets of samples of composite epoxy resins with different kinds of micro-ground siliceous sand as a filling. The temperature and frequency dependence of relative permittivity, dissipation factor and inner resistivity are measured for given samples.

This diploma thesis deals with the fundamental properties of epoxide mixtures, as determining of these fundamental properties of epoxide mixtures could in the case of favorable results lead to diminishing the amount of defects in epoxide-embedded instrument transformers. As the influence of effects in the manufacturing process of transformers causing poor quality is very extensit, the biggest emphasis is laid capitally on the influence of the epoxide casting mixture composition. The thesis describes the manufacture technology including used methodics and materials. The compositions of epoxide resins and the mechanisms of their curing. Also, the definitions of fundamental properties of dielectric materials and the description of diagnostic methods used to relative permitivity, dissipation factor and inner resistivity are included. suitable casts of acquired samples were set and dried out within the experimental part, followed by measurement of fundamental electrical properties in temperature and frequency relations. Hereafter a comparison of individual samples and the evaluation of their electrical properties will be carried out.

This master’s thesis is an introduction to the measurement of changes in tissue impedance of blood flow by impedance plethysmography. Other chapters deal with the kinds of plethysmographs and their principles. The aim is to draft four-electrode impedance plethysmograph to measure changes in tissue impedance depending on blood flow. First, describe the individual blocks of the medical instrument. The practical part of the master’s thesis involves circuit design four-electrode plethysmograph. Given that a very important role in its function plays a constant current source operating at a frequency of 60kHz, this subset was implemented and verified its correct function. To draw component schemes used program EAGLE version 5.10.0.

There is big interest in cheap, sensitive and selective gas sensors. In this work, substituted soluble phthalocyanines are proposed as a sensing materials for several gases. Optical, electrical and gas sensing properties of several phthalocyanines were studied and the mechanisms of their interaction with several analyte gases are described. It was found, that sulfo-substituted Pcs has good sensitivity to humidity. Sulfonamide-substituted phthalocyanines are promising for nitrogen dioxide and volatile organic compounds detection. tert-Butyl-substituted phthalocyanines are sensitive to NO2 under higher temperature and seems to be used for environmental monitoring. Commercial gas sensors for NO2, ethanol and humidity were successfully created.

The term "topological insulator" (TI) represents a novel class of compounds which are insulating in the bulk, but simultaneously and unavoidably have a metallic surface. The reason for this is the non-trivial band topology, arising from particular band inversions and the spin-orbit interaction, of the bulk. These topologically protected metallic surface states are characterized by massless Dirac dispersion and locked helical spin polarization, leading to forbidden back-scattering with robustness against disorder. Based on the extraordinary features of the topological insulators an abundance of new phenomena and many exciting experiments have been proposed by theoreticians, but still await their experimental verification, not to mention their implementation into applications, e.g. the creation of Majorana fermions, advanced spintronics, or the realization of quantum computers. In this perspective, the 3D TIs Bi2Te3 and Bi2Se3 gained a lot of interest due to their relatively simple electronic band structure, having only a single Dirac cone at the surface. Furthermore, they exhibit an appreciable bulk band gap of up to ~ 0.3 eV, making room temperature applications feasible. Yet, the execution of these proposals remains an enormous experimental challenge. The main obstacle, which thus far hampered the electrical characterization of topological surface states via transport experiments, is the residual extrinsic conductivity arising from the presence of defects and impurities in their bulk, as well as the contamination of the surface due to exposure to air. This thesis is part of the actual effort in improving sample quality to achieve bulk-insulating Bi2Te3 films and study of their electrical properties under controlled conditions. Furthermore, appropriate capping materials preserving the electronic features under ambient atmosphere shall be identified to facilitate more sophisticated ex-situ experiments. Bi2Te3 thin films were fabricated by molecular beam epitaxy (MBE). It could be shown that, by optimizing the growth conditions, it is indeed possible to obtain consistently bulk-insulating and single-domain TI films. Hereby, the key factor is to supply the elements with a Te/Bi ratio of ~8, while achieving a full distillation of the Te, and the usage of substrates with negligible lattice mismatch. The optimal MBE conditions for Bi2Te3 were found in a two-step growth procedure at substrate temperatures of 220°C and 250°C, respectively, and a Bi flux rate of 1 Å/min. Subsequently, the structural characterization by high- and low-energy electron diffraction, photoelectron spectroscopy, and, in particular, the temperature-dependent conductivity measurements were entirely done inside the same ultra-high vacuum (UHV) system, ensuring a reliable record of the intrinsic properties of the topological surface states. Bi2Te3 films with thicknesses ranging from 10 to 50 quintuple layers (QL; 1QL~1 nm) were fabricated to examine, whether the conductivity is solely arising from the surface states. Angle resolved photoemission spectroscopy (ARPES) demonstrates that the chemical potential for all these samples is located well within the bulk band gap, and is only intersected by the topological surface states, displaying the characteristic linear dispersion. A metallic-like temperature dependency of the sheet resistance is observed from the in-situ transport experiments. Upon going from 10 to 50QL the sheet resistance displays a variation by a factor 1.3 at 14K and of 1.5 at room temperature, evidencing that the conductivity is indeed dominated by the surface. Low charge carrier concentrations in the range of 2–4*10^12 cm^−2 with high mobility values up to 4600 cm2/Vs could be achieved. Furthermore, the degradation effect of air exposure on the conductance of the Bi2Te3 films was quantified, emphasizing the necessity to protect the surface from ambient conditions. Since the films behave inert to pure oxygen, water/moisture is the most probable source of degeneration. Moreover, epitaxially grown elemental tellurium was identified as a suitable capping material preserving the properties of the intrinsically insulating Bi2Te3 films and protecting from alterations during air exposure, facilitating well-defined and reliable ex-situ experiments. These findings serve as an ideal platform for further investigations and open the way to prepare devices that can exploit the intrinsic features of the topological surface states.:Abstract Kurzfassung Acronyms List of Symbols Introduction 1 Topological insulators 1.1 Basic theory of topological insulators 1.2 3D topological insulator materials: bismuth chalcogenides 2 Experimental techniques 2.1 General layout of the UHV-system 2.2 Molecular beam epitaxy 2.3 Structural and spectroscopic characterization 2.3.1 RHEED and LEED 2.3.2 Photoelectron spectroscopy 2.3.3 Ex situ x-ray diffraction 2.4 In situ electrical resistance measurements 2.4.1 In situ transport setup 2.4.2 Measurement equipment and operation modes 2.5 Substrates and sample holders 3 MBE growth and structural characterization of Bi2Te3 thin films 3.1 Bi2Te3 growth optimization and in situ structural characterization 3.1.1 1-step growth on Al2O3 (0001) 3.1.2 2-step growth on Al2O3 (0001) 3.1.3 2-step growth on BaF2 (111) 3.2 Ex situ structural characterization 4 In situ spectroscopy and transport properties of Bi2Te3 thin films 4.1 In situ spectroscopy of Bi2Te3 thin films 4.1.1 XPS 4.1.2 ARPES 4.2 Combined ARPES and in situ electrical resistance measurements of bulk-insulating Bi2Te3 thin films 4.2.1 Quality of the in situ electrical sample contacts 4.2.2 Verification of the intrinsic conduction through topological surface states of bulk-insulating Bi2Te3 thin films 5 Effect of surface contaminants on the TI properties 5.1 Effect of air exposure on the electrical conductivity of Bi2Te3 surfaces 5.2 Determination of the contaminants causing degradation of the TI properties 5.3 Long-time resistance behavior of a Bi2Te3 film exposed to minimal traces of contaminants 6 Protective capping of bulk-insulating Bi2Te3 thin films 6.1 Capping with BaF2 6.1.1 MBE growth and structure of BaF2 on Bi2Te3 thin films 6.1.2 Electron spectroscopy and electrical transport properties of BaF2 capped Bi2Te3 6.2 Capping with tellurium 6.2.1 MBE growth and structure of Te on Bi2Te3 thin films 6.2.2 Photoelectron spectroscopy and electrical transport properties of Te capped Bi2Te3 6.2.3 De-capping of Te 6.2.4 Efficiency of Te capping against air exposure 7 Conclusion and outlook Bibliography Versicherung Curriculum vitae Veröffentlichungen / Der Begriff "Topologischer Isolator" (TI) beschreibt eine neuartige Klasse von Verbindungen deren Inneres (engl. Bulk) isolierend ist, dieses Innere aber gleichzeitig und zwangsläufig eine metallisch leitende Oberfläche aufweist. Dies ist begründet in der nicht-trivialen Topologie dieser Materialien, welche durch eine spezielle Invertierung einzelner Bänder in der Bandstruktur und der Spin-Bahn-Kopplung im Materialinneren hervorgerufen ist. Diese topologisch geschützten, metallischen Oberflächenzustände sind gekennzeichnet durch eine masselose Dirac Dispersionsrelation und gekoppelte Helizität der Spinpolarisation, welche die Rückstreuung der Ladungsträger verbietet und somit zur Stabilisierung der Zustände gegenüber Störungen beiträgt. Auf Grundlage dieser außergewöhnlichen Merkmale haben Theoretiker eine Fülle neuer Phänomene und spannender Experimente vorhergesagt. Deren experimentelle Überprüfung steht jedoch noch aus, geschweige denn deren Umsetzung in Anwendungen, wie zum Beispiel die Erzeugung von Majorana Teilchen, fortgeschrittene Spintronik, oder die Realisierung von Quantencomputern. Aufgrund ihrer relativ einfachen Bandstruktur, welche nur einen Dirac-Kegel an der Oberfläche aufweist, haben die 3D TI Bi2Te3 und Bi2Se3 in den letzten Jahren großes Interesse erlangt. Weiterhin besitzen diese Materialien eine merkliche Bandlücke von bis zu ~0,3 eV, welche sogar Anwendungen bei Raumtemperatur ermöglichen könnten. Dennoch ist deren experimentelle Umsetzung nachwievor eine enorme Herausforderung. Das Haupthindernis, welches bis jetzt insbesondere die elektrische Charakterisierung the topologischen Oberflächenzustände behindert hat, ist die zusätzliche Leitfähigkeit des Materialinneren, welche durch Kristalldefekte und Beimischungen, sowie die Verunreinigung der Probenoberfläche durch Luftexposition bedingt wird. Die vorliegende Arbeit liefert einen Beitrag zu aktuellen den Anstrengungen in der Verbesserung der Probenqualität der TI um die Leitfähigkeit des Materialinneren zu unterdrücken, sowie die anschließende Untersuchung der elektrischen Eigenschaften unter kontrollierten Bedingungen durchzuführen. Weiterhin sollen geeignete Deckschichten identifiziert werden, welche die besonderen elektronischen Merkmale der TI nicht beeinflussen sowie diese gegen äußere Einflüsse schützen, und somit die Durchführung anspruchsvoller ex situ Experimente ermöglichen können. Die untersuchten Bi2Te3 Schichten wurden mittels Molekularstrahlepitaxie (MBE) hergestellt. Es konnte gezeigt werden, dass es allein durch Optimierung der Wachstumsbedingungen möglich ist Proben herzustellen, die gleichbleibend isolierende Eigenschaften des TI Inneren aufweisen und Eindomänen-Ausrichtung besitzen. Die zentralen Faktoren sind hierbei die Aufrechterhaltung eines Flussratenverhältnisses von Te/Bi ~8 der einzelnen Elemente, sowie die Wahl einer ausreichend hohen Substrattemperatur, um ein vollständiges Abdampfen (Destillation) des überschüssigen Tellur zu erreichen. Weiterhin müssen Substrate mit gut angepassten Gitterparametern verwendet werden, welches bei BaF2 (111) gegeben ist. Optimales MBE Wachstum konnte durch ein Zwei-Stufen Prozess bei Substrattemperaturen von 220°C und 250°C und einer Bi-Verdampfungsrate von 1 Å/min erreicht werden. Die nachfolgende Charakterisierung der strukturellen Eigenschaften, Photoelektronenspektroskopie, sowie temperaturabhängige Leitfähigkeitsmessungen wurden alle in einem zusammenhängenden Ultrahochvakuum-System durchgeführt. Auf diese Weise wird eine zuverlässige Erfassung der intrinsischen Eigenschaften der TI sichergestellt. Zur Überprüfung, ob die Leitfähigkeit der Proben tatsächlich nur durch die Oberflächenzustände hervorgerufen wird, wurden Filme mit Schichtdicken im Bereich von 10 bis 50 Quintupel-Lagen (QL; 1QL~ 1 nm) hergestellt und charakterisiert. Winkelaufgelöste Photoelektronenspektroskopie (ARPES) belegt, dass das chemische Potential (Fermi-Niveau) in allen Proben innerhalb der Bandlücke der Bandstruktur des Materialinneren liegt und nur von den topologisch geschützten Oberflächenzuständen gekreuzt wird, welche die charakteristische lineare Dirac Dispersionsrelation aufweisen. Die temperaturabhängigen Widerstandsmessungen zeigen ein metallisches Verhalten aller Proben. Bei der Variation der Schichtdicke von 10 zu 50QL wird eine Streuung des Flächenwiderstandes vom Faktor 1,3 bei 14K und 1,5 bei Raumtemperatur beobachtet. Dies beweist, dass die gemessene Leitfähigkeit vorrangig durch die topologisch geschützten Oberflächenzustände hervorgerufen wird. Eine geringe Oberflächenladungsträgerkonzentration im Bereich von 2–4*10^12 cm^−2 und hohe Mobilitätswerte von bis zu 4600 cm2/Vs wurden erreicht. Weiterhin wurden die negativen Auswirkungen auf die Eigenschaften der TI durch Luftexposition quantifiziert, welches die Notwendigkeit belegt, die Oberfläche der TI vor Umgebungseinflüssen zu schützen. Die Proben verhalten sich inert gegenüber reinem Sauerstoff, daher ist Wasser aus der Luftfeuchte höchstwahrscheinlich der Hauptgrund für die beobachtbare Verschlechterung. Darüber hinaus konnte epitaktisch gewachsenes Tellur als geeignete Deckschicht ausfindig gemacht werden, welches die Eigenschaften der Bi2Te3 Filme nicht beeinflusst, sowie gegen Veränderungen durch Luftexposition schützt. Die gewonnenen Erkenntnisse stellen eine ideale Grundlage für weiterführende Untersuchungen dar und ebnen den Weg zur Entwicklung von Bauelementen welche die spezifischen Besonderheiten der topologischen Oberflächenzustände.:Abstract Kurzfassung Acronyms List of Symbols Introduction 1 Topological insulators 1.1 Basic theory of topological insulators 1.2 3D topological insulator materials: bismuth chalcogenides 2 Experimental techniques 2.1 General layout of the UHV-system 2.2 Molecular beam epitaxy 2.3 Structural and spectroscopic characterization 2.3.1 RHEED and LEED 2.3.2 Photoelectron spectroscopy 2.3.3 Ex situ x-ray diffraction 2.4 In situ electrical resistance measurements 2.4.1 In situ transport setup 2.4.2 Measurement equipment and operation modes 2.5 Substrates and sample holders 3 MBE growth and structural characterization of Bi2Te3 thin films 3.1 Bi2Te3 growth optimization and in situ structural characterization 3.1.1 1-step growth on Al2O3 (0001) 3.1.2 2-step growth on Al2O3 (0001) 3.1.3 2-step growth on BaF2 (111) 3.2 Ex situ structural characterization 4 In situ spectroscopy and transport properties of Bi2Te3 thin films 4.1 In situ spectroscopy of Bi2Te3 thin films 4.1.1 XPS 4.1.2 ARPES 4.2 Combined ARPES and in situ electrical resistance measurements of bulk-insulating Bi2Te3 thin films 4.2.1 Quality of the in situ electrical sample contacts 4.2.2 Verification of the intrinsic conduction through topological surface states of bulk-insulating Bi2Te3 thin films 5 Effect of surface contaminants on the TI properties 5.1 Effect of air exposure on the electrical conductivity of Bi2Te3 surfaces 5.2 Determination of the contaminants causing degradation of the TI properties 5.3 Long-time resistance behavior of a Bi2Te3 film exposed to minimal traces of contaminants 6 Protective capping of bulk-insulating Bi2Te3 thin films 6.1 Capping with BaF2 6.1.1 MBE growth and structure of BaF2 on Bi2Te3 thin films 6.1.2 Electron spectroscopy and electrical transport properties of BaF2 capped Bi2Te3 6.2 Capping with tellurium 6.2.1 MBE growth and structure of Te on Bi2Te3 thin films 6.2.2 Photoelectron spectroscopy and electrical transport properties of Te capped Bi2Te3 6.2.3 De-capping of Te 6.2.4 Efficiency of Te capping against air exposure 7 Conclusion and outlook Bibliography Versicherung Curriculum vitae Veröffentlichungen

La thèse concerne les synthèse et caractérisation de composites polymères nanostructurés à base d’esters de cyanates de bisphénol a (DCBA) ou à base d’oligomères cycliques de butylène téréphtalate (CBT) et de nanotubes de carbone multi-parois (MWCNTS). L’effet catalytique des nanotubes de carbone sur la polycyclotrimerisation de DCBA et aussi sur la polymérisation du CBT est observé. L’augmentation de la température de cristallisation a été fixée pour tous les échantillons de nanocomposites à base de polybutylène téréphtalate (cPBT). L’effet de la méthode de mise en forme de cPBT/MWCNTS sur ses propriétés thermiques et électriques a été établi. Il est observé que le traitement thermique additionnel des échantillons (recuit) à des températures inférieures à celle de la fusion du cPBT cause la réagglomération des MWCNTS dans le système. Il est établi que l’ajout de très bas taux de MWCNTS (0.03-0.06 pour cent en masse) dans la matrice de polycyanurate (PCN) augmente les valeurs de résistance à la flexion (64-94 pour cent). De même l’ajout de 0.01 pourcent de MWCNTS en masse dans le CBT augmente considérablement le module d'élasticité des nanocomposites cPBT. Cet effet a été expliqué par la dispersion efficace de cette faible quantité de nanocharges pendant la synthèse in situ de la matrice de cPBT et est confirmée par les clichés en microscopie. Il est déterminé que les propriétés électriques des nanocomposites à base d’esters hétérocycliques et MWCNTS peuvent varier de matériaux isolants aux matériaux conducteurs. Les seuils de percolation des deux systèmes sont très bas (0.22 et 0.38 pourcent pour nanocomposites à base de cPBT et PCN respectivement). La conductivité des composites conducteurs est particulièrement stable sur un large domaine de température ce qui laisse présager des applications intéressantes dans le domaine de la microélectronique et pour des pièces d’avion et de navettes spatiales. / The thesis relates to synthesis and investigation of nanostructured polymer composites based on oligomers of cyanate esters of bisphenol a (DCBA) or cyclic butylene terephthalate (CBT) and multiwalled carbon nanotubes (MWCNTS). Catalytic effect of mwcnts in process of DCBA polycyclotrimerization as well as in cbt polymerization has been observed. Significant increase in crystallization temperature of nanocomposites based on polybutylene terephthalate (cPBT) with adding of MWCNTS is observed. The effect of processing method of cpbt/mwcnts nanocomposites on its electrical properties has been found. It has been established that the additional heating of the samples (annealing) at temperatures above melting of cPBT leads to reagglomeration of MWCNTS in the system. It is established that reagglomeration of MWCNTS results in increase of conductivity values of nanocomposites due to formation of percolation pathways of MWCNTS through polymer matrix. In the case of polycyanurate matrix (PCN), it is found that addition of small mwcnts contents (0.03-0.06 weight percents) provides increasing tensile strength by 62-94 percents. It has been found that addition of even 0.01 weight percents of MWCNTS provides significant increase in storage modulus of cPBT matrix. This is explained by effective dispersing of small amount of the nanofiller during in situ synthesis of pcn or cpbt matrix that is confirmed by microscopy techniques. It has been established that the properties of the nanocomposites based on heterocyclic esters and MWCNTS can be varied from isolator to conductor and has low percolation thresholds (0.22 and 0.38 weight percents for cPBT and PCN nanocomposites respectively). The conductivity of samples is particularly stable on a very large range of temperature from 300 to 10 degrees Kelvin that make these materials perspective for practical applications in microelectronics, as parts of aircraft and space constructions.

La thèse détermine les principaux paramètres de la formation des structures de la phase conductrice de nanocomposites polymères chargés avec des nanotubes de carbone (NTC) ou des nanocharges combinées, pour étudier l'influence de la morphologie de la structure hétérogène du composite et l'interaction des nanocharges sur les propriétés électriques, thermophysiques et mécaniques des composites. Les trois types de systèmes polymères ont été étudiés, à savoir: 1) les systèmes ségrégés avec distribution ordonnée de nanocharges, 2) les mélanges polymère conducteur; 3) les composites avec des charges binaires où les nanotubes de carbone ont été combinés avec des composés organo-argileux modifiés (MOC) dans un cas et des nanoparticules métalliques d’autre part. Les résultats sur les composites polymères ségrégés chargés avec des NTC ont montré que dans de tels systèmes, la charge conductrice crée un réseau continu conducteur au sein de la matrice polymère. Cela conduit à un seuil de percolation ultra faible avec la valeur de φc~0,045vol.%. Il a été démontré que les systèmes conducteurs à base de mélanges de polymères ont un seuil de percolation inférieur en raison d'effet de double percolation. Il a été constaté que l'introduction simultanée de composés MOC et de NTC dans la matrice thermoplastique permet une meilleure répartition des nanotubes de carbone, ce qui empêche leur agrégation. Il en résulte une diminution du seuil de percolation des composites. Il a été démontré que la formation de la phase conductrice est plus efficace avec des charges mixtes CNT/nanométal en comparaison avec les charges individuelles / The thesis research field determines the main parameters, of the conductive phase structure formation in polymer nanocomposites filled with conductive fillers such as carbon nanotubes (CNTs) or combined nanofillers. The influence of the morphology of the heterogeneous structure of the composite and interaction of nanofillers on the electrical, thermophysical and mechanical properties of the composites was studied. The three types of polymer systems filled with carbon nanotubes have been investigated, namely: 1) segregated systems with ordered distribution of the nanofiller; 2) conductive polymer blends; 3) composites with binary fillers in which carbon nanotubes have been combined with organo-modified clay (OMC) in one case and with metal nanoparticles in another case. The investigation of the segregated polymer composites filled with CNTs has shown that the conducting filler creates continuous conductive framework inside the polymer matrix. This provides the presence of ultralow percolation threshold with the value of φc~0.045vol.%. Conductive polymer blends have demonstrated a lower percolation threshold in comparison with individually filled polymers due to a double percolation effect. It has been found that the simultaneous introduction of OMC and CNTs into thermoplastic matrix provides a better distribution of carbon nanotubes, preventing their aggregation and decreasing the percolation threshold. It has been shown that the formation of the conducting phase is more effective in the polymeric matrix with combined nanofillers CNT/nanometal in comparison with individual fillers and the higher conductivity of such conductive system is due to metallic filler content

Magnetisch-induktive Techniken finden seit langer Zeit viele Anwendungsfelder in der Medizin, Sicherheitstechnik und der Industrie. Obwohl die technischen Grundlagen seit vielen Jahrzehnten bekannt sind, werden auf Basis detaillierter Analysen spezielle Lösungsansätze verfolgt, die neuartiges Anwendungspotential erschließen sollen. Dazu dienen verbesserte Werkzeuge wie Computersimulationen und analytische Berechnungen sowie neu kombinierte Methoden und Aufbauten aus Leistungselektronik und Signaldetektion. Die Vorteile magnetisch-induktiver Techniken sind dabei u.a., dass sie das Prüfobjekt nicht schädigen, berührungslos arbeiten, robust gegenüber Verschmutzungen und einfach im Aufbau sind. Ein Nachteil dieser Technik ist die unzureichende Auflösung von feinen Strukturen. In der aktuellen Forschung und Entwicklung werden unterschiedliche Spulenanordnungen zur Anwendung in industriellen und medizinischen Fragestellungen untersucht und optimiert. Thema dieser Arbeit ist es, durch Verbesserung der Spuleneigenschaften, neue Anwendungsbereiche für die zerstörungsfreie Materialprüfung zu erschließen. Es wird eine Methode vorgestellt, die Eigenschaften magnetisch-induktiver Tastspulen zu verbessern und so den Aufwand bei der Signalverarbeitung zur Rekonstruktion im Rechner zu reduzieren sowie die Auflösung zu erhöhen. Dazu werden zwei Spulenanordnungen, Transmissions - Tastspulen und Gradiometer - Tastspulen, vergleichend gegenübergestellt und ihre technischen Grenzen aufgezeigt. / Magneto-inductive techniques are found in many fields of application areas so in medicine, security technology and industry. Although the technical basis has been known for many decades, special solutions are pursued on the basis of detailed analysis that should open new application potential. These are enhanced tools such as computer simulations, analytical calculations, new combined methods and structures of power electronics and signal detection. The advantages of magneto-inductive techniques are that they do not damage the test object, are contactless, robust against dirt and simple in construction. A disadvantage of this technique is the insufficient resolution of fine structures. In current research and development different coil assemblies are investigated in industrial and medical applications. The aim of this work is to improve the coil properties by changing geometric constructions and current patterns of the coils, in order to allow a sharper localization of objects in space and to tap new application areas for non-destructive testing. A method to improve the properties of magneto-inductive coils and thus to reduce the effort in signal processing and image reconstruction as well as to increase the resolution is presented. Two different coil assemblies, gradiometer – coils and transmission – coils, are compared and their technical limits shown.

Here, silicon oxide was formed in a U-shaped trench of a power metal-oxide semiconductor field-effect transistor device by various processes. One SiO₂ formation process was performed in multiple steps to create a low-defect Si-SiO₂ interface, where first a thin initial oxide was grown by thermal oxidation followed by the deposition of a much thicker oxide layer by chemical vapor deposition (CVD). In a second novel approach, silicon nitride CVD was combined with radical oxidation to form silicon oxide in a stepwise sequence. The resulting stack of silicon oxide films was then annealed at temperatures between 1000 and 1100 °C. All processes were executed in an industrial environment using 200 mm-diameter (100)-oriented silicon wafers. The goal was to optimize the trade-off between wafer uniformity and conformality of the trenches. The thickness of the resulting silicon oxide films was determined by ellipsometry of the wafer surface and by scanning electron microscopy of the trench cross sections. The insulation properties such as gate leakage and electrical breakdown were characterized by current–voltage profiling. The electrical breakdown was found to be highest for films treated with rapid thermal processing. The films fabricated via the introduced sequential process exhibited a breakdown behavior comparable to films deposited by the common low-pressure CVD technique, while the leakage current at electric fields higher than 5 MV/cm was significantly lower.