The doctoral theses deal with electrochemical deposition of lead, tin, silicon and germanium from aprotic electrolytes in anhydrous inert atmosphere. Deposited layers are studied from the perspective of their surface and of electrochemical characteristics.

The doctoral theses deal with electrochemical deposition of lead, tin, silicon and germanium from aprotic electrolytes in anhydrous inert atmosphere. Deposited layers are studied from the perspective of their surface and of electrochemical characteristics.

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Die Entwicklung der Mikroelektronik wird durch eine fortschreitende Miniaturisierung der Bauelemente geprägt. Infolge einer Reduzierung der Querschnittflächen von Leitbahnstrukturen erhöht sich die elektrische Leistungsdichte und das Metallisierungssystem bestimmt zunehmend die Übertragungsgeschwindigkeiten. Kupfer repräsentiert hierbei das verbreitetste Leitbahnmaterial und wird vorwiegend mittels elektrochemischer Abscheidung in vergrabene Damaszen-Strukturen eingebracht. Die vorliegende Dissertation beschreibt Möglichkeiten für eine Optimierung von Kupferleitbahnen für höchstintegrierte Schaltkreise. Von besonderem Interesse sind hierbei die Gefügequalität und der Reinheitsgrad. Es erfolgen umfangreiche werkstoffanalytische und elektrochemische Untersuchungen zur Charakterisierung von Depositionsmechanismen, des Einbaus von Fremdstoffen, des Mikrogefüges nach der Abscheidung und der Mikrogefügeumwandlung. In einem abschließenden Forschungsschwerpunkt werden Kupfer-Damaszen-Teststrukturen mit unterschiedlichen Gehalten nichtmetallischer Verunreinigungen hergestellt und entsprechenden Lebensdauerexperimenten unterzogen. Hierdurch gelingt eine Evaluierung des Einflusses jener Verunreinigungen auf die Elektromigrationsbeständigkeit von Kupferleitbahnen. Die Arbeit umfasst daher das gesamte Spektrum von der Grundlagenforschung bis zur Applikation von elektrochemisch abgeschiedenen Kupferdünnschichtmetallisierungen.

This work focuses on the solar cell based on the heterostructure formed between Copper Phthalocyanine (CuPc) and Cadmium Sulfide (CdS). Two different fabrication techniques were used for depositing the organic and inorganic layers of CuPc and CdS layers respectively. CuPc was deposited by electrodeposition while CdS was deposited by chemical bath deposition. Hybrid CdS/CuPc thin films were obtained from CdS films grown on Glass/ITO by chemical bath deposition followed by electrodeposition of CuPc onto these films and annealing at 250˚C after the deposition of each layer. The maximum open circuit voltage (Voc) and the short circuit current density (Jsc) obtained for this heterojunction solar cell are 0.59v and 0.7mA/cm2 respectively and these are the highest values achieved in literature till date. The materials characteristics and electrical performances of the device were analyzed. The effect of increasing the thickness of CuPc and CdS on the short circuit current density and open circuit voltage were also investigated.

Un dispositif expérimental de dépôt électrochimique en couches atomiques (EC-ALE) a été conçu et réalisé dans cette thèse. Sa mise en oeuvre a permis de valider cet équipement. Grâce à la flexibilité de cet équipement, un nouveau point de vue du dépôt en sous potentiel (UPD) du cobalt sur un substrat d'or a été proposé. Les résultats montrent aussi que le dépôt alternatif de monocouches de Co et de Sb est possible. Pour la première fois, l'électrodéposition de films minces Sb2Se3 par la méthode EC-ALE sur des électrodes poly-cristallines d'or a été obtenue et étudiée. Les paramètres de dépôt ont été déterminés et le film mince déposé a été caractérisé par analyses MEB et RAMAN. L'adsorption irréversible et le phénomène UPD réversible de Sb sur une électrode de Pt a aussi été étudié. Les résultats montrent qu'après la réduction en Sb des espèces adsorbées SbO+, des atomes de Sb peuvent être déposés sur cette électrode de Pt modifiée au Sb en utilisant le dépôt en sous potentiel pour augmenter le recouvrement du substrat du Pt par le Sb. / An electrochemical atomic layer epitaxy (EC-ALE) experiment platform was designed and constructed in this thesis, and this platform was proved to be qualified for EC-ALE experiments.Benefiting from the flexibility of the EC-ALE equipment, a new viewpoint about the UPD behavior of cobalt on the gold substrate has been put forward in this work. The results also show that the subsequent alternate deposition of Co and Sb monolayers is feasible.For the first time the electrodeposition of Sb2Se3 thin films by EC-ALE method on polycrystalline Au electrodes has been obtained and investigated. The deposition parameters were determined and the deposit was characterized by SEM and Raman analysis.The irreversible adsorption and reversible UPD behaviour of Sb on Pt electrode have also been studied. The results show that after the irreversibly adsorbed SbO+ species are reduced to metallic Sb, Sb atoms can be further deposited onto this Sb-modified Pt electrode in the way of UPD to increase the coverage of Sb on the Pt substrate.

Tato diplomová práce je zaměřená na výrobu Au-PANI-Au nanodrátů. Prezentovaná výroba nanodrátů je založená na elektrochemické depozici různých kovů a polymerizaci polyanilínu do porézních šablon z porézní anodické aluminy připravených anodizací hliníku. Teoretická část pojednává o základech elektrochémie a porézní anodické aluminy.

<p>Self-oscillating behaviour in alkaline Cu(II)-lactate and -tartrate systems has been investigated by in-situ pH and confocal Raman spectroscopy measurements. Formation of Cu(II)-lactate and -tartrate complexes is a key factor underlying the self-oscillations. Dynamic processes in the diffusion layer have been probed to give a better understanding of the self-oscillating process.</p><p>The self-oscillating behaviour is found to be an effect of pH variations in the diffusion layer. Mainly copper is deposited at lower pH values and potentials; at the same time, the pH increases. This is an effect of the dissociation of the Cu(II)-complex during electrochemical reduction. The absence of a buffer within a given pH region is crucial to the fast and sudden pH increase and thereby to the positive potential shift, where cuprous oxide is deposited. A precipitation reaction probably decreases the pH again, leading to a negative potential shift, and copper again begins to deposit. The concentration and strength of the buffer in the electrolyte affect the appearance of the oscillation pattern. The pH and temperature of the bulk electrolyte also influence the self-oscillations. The deposit consists of copper and cuprous oxide, where the composition of the phases deposited is a function of the working-electrode potential. Cuprous oxide is deposited at the higher potentials and mainly copper at the lower potentials.</p><p>Finally, two-dimensional arrays of Cu/Cu₂O microcylinders have been deposited using the Cu(II)-lactate system through the application of a template method.</p>

Self-oscillating behaviour in alkaline Cu(II)-lactate and -tartrate systems has been investigated by in-situ pH and confocal Raman spectroscopy measurements. Formation of Cu(II)-lactate and -tartrate complexes is a key factor underlying the self-oscillations. Dynamic processes in the diffusion layer have been probed to give a better understanding of the self-oscillating process. The self-oscillating behaviour is found to be an effect of pH variations in the diffusion layer. Mainly copper is deposited at lower pH values and potentials; at the same time, the pH increases. This is an effect of the dissociation of the Cu(II)-complex during electrochemical reduction. The absence of a buffer within a given pH region is crucial to the fast and sudden pH increase and thereby to the positive potential shift, where cuprous oxide is deposited. A precipitation reaction probably decreases the pH again, leading to a negative potential shift, and copper again begins to deposit. The concentration and strength of the buffer in the electrolyte affect the appearance of the oscillation pattern. The pH and temperature of the bulk electrolyte also influence the self-oscillations. The deposit consists of copper and cuprous oxide, where the composition of the phases deposited is a function of the working-electrode potential. Cuprous oxide is deposited at the higher potentials and mainly copper at the lower potentials. Finally, two-dimensional arrays of Cu/Cu2O microcylinders have been deposited using the Cu(II)-lactate system through the application of a template method.

L’intégration monolithique de filtres et de diodes contre les décharges électrostatiques sur silicium est une solution à bas cout et fiable pour protéger les interfaces de transfert de données des appareils nomades. La formation de caissons isolants de silicium poreux sous les filtres permet d’améliorer en partie leur performance. Cette thèse avait pour but de poursuivre l’intégration de démonstrateurs RF sur silicium poreux et de proposer des voies de fonctionnalisation du matériau en vue d’optimiser les caractéristiques des filtres. Tout d’abord, les configurations bénéfiques d’intégration de caissons poreux à un filtre de mode commun (ECMF) ont été étudiées. Ensuite, une optimisation de l’étape d’oxydation post-anodisation a été réalisée afin d’améliorer la qualité et la stabilité de l’isolation électrique. Pour cela, les mécanismes d’oxydation, les propriétés chimiques et les propriétés électriques du silicium mésoporeux oxydé ont été mises en perspective avec la nature du traitement appliqué. Enfin, l’insertion dans les pores de nanoparticules ferromagnétiques de forte perméabilité a été menée dans le but d’augmenter la densité d’inductance par unité de surface. / Monolithic integration of interference filters and protection diodes on silicon is a viable and mature technology used to protect high-speed serial interfaces of nomadic devices. To enhance the filters performance, porous silicon can be formed by anodization specifically underneath the filter area. This thesis aimed to pursue the integration of RF prototypes on porous silicon and also to suggest strategies of material functionalization in order to optimize the filter characteristics. First, various configurations of common-mode filters were integrated on porous silicon and their performances were compared. Then, the post-anodization oxidation step has been optimized in order to provide the most efficient and stable electrical isolation. The oxidation mechanisms were discussed. The surface chemistry of porous silicon and its electrical behavior have been put in perspective with the oxidation treatments. Finally, this work suggested experimental methods to synthesize and characterize a ferromagnetic porous silicon-based nanocomposite for the improvement of the inductance density per unit area.