Thesis (M.S.)--Rochester Institute of Technology, 1994. / Typescript. Includes bibliographical references (leaves 62-65).

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Dans les technologies CMOS sur substrat FDSOI, la consommation de silicium dans les zones sources/drains des transistors par les étapes successives de gravure est un paramètre critique. La gravure plasma des espaceurs de Si3N4, qui a lieu après la gravure de la grille, doit permettre la fabrication d'espaceurs au profil droit déterminant la longueur effective du canal sous la grille tout en minimisant la consommation de la couche mince de silicium sous-jacente. De plus, l'état de surface du silicium généré par la gravure des espaceurs ne doit pas entraver la croissance de silicium par épitaxie nécessaire à la fabrication des zones sources/drains surélevées.L'étude des procédés actuels de gravure des espaceurs basés sur des chimies CHxFy/O2 nous apprend que le silicium est consommé par oxydation lors de l'atterrissage du plasma sur le silicium. De plus, l'analyse XPS montre que du carbone est implanté par les ions du plasma dans le substrat de silicium, et celui-ci empêche la recroissance de silicium par épitaxie. Nous sommes en mesure de réduire cette concentration de carbone sans pour autant augmenter la consommation de silicium par l'utilisation de post-traitements plasmas non-oxydants à base d'hydrogène.Fort de cette analyse mettant en avant les limitations des procédés actuels, nous avons développé et caractérisé des procédés de gravure des espaceurs de Si3N4 utilisant des plasmas CH3F/O2/He pulsés synchronisés. La modulation en impulsions courtes avec de faibles rapports cycliques diminue la dose d'ions énergétique reçue par le substrat, ce qui permet de réduire l'épaisseur de silicium oxydé ainsi que la concentration de carbone implanté. L'ajout dans le plasma d'un gaz contenant du silicium, le SiCl4 ou le SiF4, entraine également une réduction de la consommation de silicium grâce au dépôt d'une couche SiOxFy par les radicaux de la phase gazeuse. Le meilleur résultat est obtenu avec un plasma CH3F/O2/He pulsé à 1kHz et 10% de rapport cyclique auquel sont ajoutés 5 ou 10 sccm de SiF4 : la consommation de silicium est alors quasi nulle.Une méthode de gravure alternative basée sur l'implantation d'ions He+ et H+ suivie d'une gravure humide dans une solution HF a également été développée et évaluée pour la gravure des espaceurs de Si3N4. Ce procédé de gravure novateur ne génère aucune consommation de silicium et présente des résultats très prometteurs. / In CMOS technologies on FDSOI substrate, the silicon recess in transistor's source/drain regions caused by multiple etch steps is a critical parameter. The plasma etching of Si3N4 spacers, which occurs after the gate etch step, must allow the fabrication of straight spacer profiles which will define the effective channel length under the gate, while minimizing the consumption of the underlying silicon thin film. Moreover, the silicon surface state generated by the spacers etching must not prevent the epitaxial silicon growth used for the realization of raised source/drain regions.The study of current spacers etch processes based on CHxFy/O2 chemistries shows that silicon is consummated by oxidation when the plasma lands on the silicon surface. Furthermore, the XPS analysis shows that carbon is implanted in the silicon substrate by plasma ions, and that it inhibits the silicon epitaxial regrowth. We are able to reduce the implanted carbon concentration without any additional silicon recess by using non-oxidizing plasma post-treatments based on hydrogen.After identifying the limitations of current etch processes, we developed and characterized Si3N4 spacers etch processes using synchronously pulsed CH3F/O2/He plasmas. The modulation in short pulses with low duty cycles decreases the dose of high energy ions bombarding the substrate, which allows to reduce the oxidized silicon thickness as well as the concentration of implanted carbon. The addition in the plasma of a Si-containing gas, SiCl4 or SiF4, also leads to a reduction of the silicon consumption thanks to the deposition of a SiOxFy layer by radicals from the gas phase. The best result is obtained with a CH3F/O2/He plasmas pulsed at 1 kHz and 10% duty cycle with the addition of 5 or 10 sccm of SiF4 : the silicon recess is then almost zero.We also developed and evaluated an alternative etching technique, based on the implantation of He+ and H+ ions followed by a HF wet etch, for the etching of Si3N4 spacers. This innovative etch process does not generate any silicon recess and shows some promising results.

Submitted by Charles Jourdan Alberti (charles.alberti@gmail.com) on 2018-08-23T18:57:45Z No. of bitstreams: 1 dissertacao-charles-corrigida.pdf: 2978175 bytes, checksum: bee02fe73d0c98fc3a8035c5f68d9e02 (MD5) / Approved for entry into archive by Silvana Alvarez null (silvana@ict.unesp.br) on 2018-09-03T14:51:27Z (GMT) No. of bitstreams: 1 alberti_cj_me_sjc.pdf: 2978175 bytes, checksum: bee02fe73d0c98fc3a8035c5f68d9e02 (MD5) / Made available in DSpace on 2018-09-03T14:51:27Z (GMT). No. of bitstreams: 1 alberti_cj_me_sjc.pdf: 2978175 bytes, checksum: bee02fe73d0c98fc3a8035c5f68d9e02 (MD5) Previous issue date: 2018-07-03 / A modificação da superfície dos implantes é alvo de inúmeros estudos com o intuito de desenvolver alterações microestruturais no titânio e suas ligas que possam acelerar o processo de osseointegração. O futuro da implantodontia está atualmente vinculado a estas futuras descobertas. O titânio e suas ligas são amplamente utilizadas em aplicações biomédicas devido às suas propriedades de biocompatibilidade e mecânicas. Assim, o objetivo deste trabalho é avaliar o efeito nas propriedades físico-químicas de superfície da liga de Ti6Al4V após o ataque com solução piranha nas temperaturas de 25 °C, 40 °C e 60 °C num tempo constante de 30 min. Para caracterização da superfície foram utilizadas as técnicas de microscopia eletrônica de varredura com espectroscopia de energia dispersiva de raios X, perfilometria óptica, difração de raios X e molhabilidade. Além disso foram realizados ensaios de corrosão por polarização potenciodinâmica e espectroscopia de impedância eletroquímica. Os resultados demonstraram que é possível alterar a textura, a rugosidade da superfície e a resistência à corrosão da liga com a variação da temperatura de ataque químico. O tratamento de superfície proposto não alterou a molhabilidade, que se manteve hidrofílica, nem a química da superfície, que se manteve formada principalmente por TiO2 amorfo. A rugosidade e a área da superfície aumentaram exponencialmente com o aumento da temperatura, que pode estar relacionado com o aumento da cinética de reação. Pôde-se obter uma textura tridimensional do tipo esponja com formação de nano e micropits, de acordo com a temperatura de tratamento. Houve um aumento da resistência à corrosão com o aumento da temperatura de tratamento, que pode estar associado com o aumento da espessura do óxido formado. Considerando que tais propriedades são resultados indiretos de potencial sucesso na osseointegração de um implante dentário, o tratamento de superfície da liga de Ti6Al4V com o uso de solução piranha com o controle da temperatura de ataque é um método atrativo e com grande potencial para ser comercialmente aplicado pela indústria de produção de implantes dentários. / The surface’s modification of the implants is the subject of numerous studies with the intention of developing microstructural changes in titanium and its alloys that can accelerate the osseointegration process. The future of implantology is currently linked to these future discoveries. Titanium and its alloys are widely used in biomedical applications because of their biocompatibility and mechanical properties. Thus, the objective of this work is to evaluate the effect on the surface physicochemical properties of the Ti6Al4V alloy after the piranha solution attack at temperatures of 25 °C, 40 °C and 60 °C at a constant time of 30 min. To characterize the surface were used the techniques of scanning electron microscopy with dispersive energy X-ray spectroscopy, optical profilometry, X-ray diffraction and wettability. In addition, corrosion tests were carried out by potentiodynamic polarization and electrochemical impedance spectroscopy. The results showed that it is possible to change the texture, surface roughness and corrosion resistance of the alloy with the variation of the etching temperature. The proposed surface treatment did not alter the wettability, which remained hydrophilic, nor the surface chemistry, which remained mainly amorphous TiO2. Roughness and surface area increased exponentially with increasing temperature, which may be related to the increase in reaction kinetics. It was possible to obtain a sponge-like threedimensional texture with formation of nano and micropits, according to the treatment temperature. There was an increase in corrosion resistance with increasing treatment temperature, which may be associated with the increased thickness of the oxide formed. Considering that such properties are indirect results of potential success in the osseointegration of a dental implant, the surface treatment of the Ti6Al4V alloy with the use of piranha solution with the control of the attack temperature is an attractive method and with great potential to be commercially applied by the dental implant production industry.

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O uso de implantes osseointegrados vem crescendo nas últimas décadas e, juntamente com eles, suas complicações. A periimplantite se apresenta como uma infecção bacteriana que afeta os tecidos moles e duros ao redor do implante, promovendo perda da osseointegração. Assim, o objetivo primário deste estudo foi analisar a efetividade da remoção de bactérias, através do software ImageJ, aderidas às superfícies de titânio por diferentes agentes químicos condicionantes, por meio de análise em microscopia eletrônica de varredura (MEV). Juntamente foi analisado a alteração da rugosidade de superfície após a utilização dos agentes. Foi realizado estudo in vitro, no qual 70 covers (protótipos de implantes) passaram por preparo das superfícies para adequação do meio à cultura bacteriana, fixação das bactérias; e em seguida, foram divididos em 7 grupos (n=10), de acordo com o tratamento: AF180 aplicação de ácido fosfórico (AF) por 180 segundos; AF90- AF por 90 segundos; EDTA180 EDTA por 180 segundos; EDTA90 EDTA por 90 segundos; AC180 ácido cítrico por 180 segundos; AC90 AC por 90 segundos; Controle RAR. A análise comparativa do grau de contaminação bacteriana observado antes e depois do tratamento entre os diferentes grupos foi realizada por meio do teste não paramétrico de Kruskal-Wallis; e as alterações da rugosidade superficial foram analisadas por meio do teste ANOVA a dois critérios, pós-teste de Dunnett. Através desta metodologia, este trabalho sugere que o tratamento de superfícies de titânio contaminadas por meio do emprego de solução em gel de EDTA a 24% por 90 e 180 segundos e ácido cítrico a 50% por 180 segundos é efetiva para remoção de A. atinomycetencomitans. Além disso, o tratamento por meio de EDTA por 90 e 180 segundos promove alteração significativa dos parâmetros de rugosidade superficial, especialmente quando comparado aos grupos controle e AF180, indicando que este tratamento pode resultar em subtração ácida adicional. / The use of dental implants has grown in recent decades and, with them, their complications. The periimplantitis is presented as a bacterial infection that affects the soft and hard tissue around the implant, promoting loss of osseointegration. Thus, the primary objective of this study was to analyze the effectiveness of removal of bacteria tby means of the ImageJ software, adhered to the titanium surfaces by different chemical conditions, through analysis in scanning electron microscopy (SEM). The change of surface roughness was also analyzed after using the chemical agents. An in vitro study in which 70 covers (implant prototypes) was prepared for the bacteria culture, fixation of the bacterias; and then they were divided into 7 groups (n = 10), according to the surface treatment: AF180- application of phosphoric acid (FA) for 180 seconds; AF90- AF for 90 seconds; EDTA180 - EDTA for 180 seconds; EDTA90 - EDTA for 90 seconds; AC180 - citric acid for 180 seconds; AC90 -AC for 90 seconds; Control - RAR. The comparative analysis of the degree of bacterial contamination was performed using Kruskal-Wallis non parametric test; and changes of surface roughness were analyzed by ANOVA two criteria, post-test Dunnett. Through this method, this work suggests that treatment of titanium contaminated surfaces by means of EDTA gel solution employing 24% for 90 and 180 seconds and citric acid 50% for 180 seconds is effective for removing A. atinomycetencomitans. Moreover, treatment using EDTA for 90 to 180 seconds promotes significant change of surface roughness parameters, especially when compared to control groups and AF180, indicating that this treatment can result in additional acidic subtraction.

Kyoto University (京都大学) / 0048 / 新制・課程博士 / 博士(工学) / 甲第17064号 / 工博第3613号 / 新制||工||1548(附属図書館) / 29784 / 京都大学大学院工学研究科航空宇宙工学専攻 / (主査)教授 斧 髙一, 教授 稲室 隆二, 教授 青木 一生 / 学位規則第4条第1項該当

Les plasmas radio-fréquences à couplage inductif en gaz halogénés simples (cl2/hbr/o2) sont fortement utilisés dans l'industrie des semi-conducteurs. Cependant, notre connaissance des processus réactionnels de ces plasmas est encore très partielle. De nombreux travaux de simulations (fluides, particulaires...), visant à améliorer celle-ci, ont été produits ces dernières décennies. Toutefois, trop peu de résultats expérimentaux sont disponibles dans la littérature afin de valider ou améliorer ces simulations. L'objectif de cette thèse est alors de produire un ensemble complet de résultats experimentaux. Nous nous focalisons essentiellement sur le cas des plasmas de cl2 et de o2 purs. Dans cette thèse, nous étendons les résultats expérimentaux déjà présents dans la littérature : densités de charges et de neutres, températures translationnelles. En particulier, les tendances en fonction de la pression, essentielles pour la simulation, sont soigneusement étudiées. Les vibrations moléculaires sont également étudiées à l'aide d'un montage innovant de spectroscopie d'absorption. Nous montrons que les simulations sont encore loin de représenter fidèlement les processus réactionnels des plasmas étudiés. Nous tentons de fournir à cet effet quelques pistes d'améliorations. Ce travail est la base nécessaire à l'amélioration continue des plasmas industriels utilisés pour la gravure de semi-conducteurs. / Radio-frequency inductively-coupled plasmas in simple halogen gases (cl2/hbr/o2) are widely used in the semi-conductor industry. However, our knowledge of these plasmas is still incomplete. To improve it, numerous simulation studies have been performed in the last decades. Unfortunately, experimental results to compare these studies are still scarce. The objectives of this thesis is to provide a comprehensive set of experimental results. We focused on the plasmas of pure o2 and cl2. In this thesis, we extend the already available experimental results : neutral nd charges densities, translational temperatures. In particular, the tendancies of these parameters as a function of the pressure are carefully studied. Molecular vibrations are studied as well using a new kind of absorption spectroscopy setup. We show that the recent simulations are still far from representing the reactional processes in the studied plasmas. We then try to provide some ideas of improvement. This work is the needed start to improve etching plasma industrial processes.