Polarization behaviours of copper diffused p-type GaAs was studied in 1. 0M NaCl and 1. 0M NaNO₃ by means of pitting scan and linear sweep potentiodynamic polarization techniques. The thermodynamic potential-pH diagram of the GaAs-H₂O system was constructed. The observed electrode behaviours of GaAs were compared and correlated to the potential-pH diagram. Freely corroding potential, passivation behaviour and pitting potential were examined as a function of a number of factors. These included the effects of different annealing and polishing pretreatments, the bulk solution pH and polarization methods. The corrosion potential (Ecorr) , pitting potential (Epit) and passivation behaviour were affected by the different pretreatments which changed the surface condition of GaAs. For mechanically polished samples, pitting corrosion was found in pH 7.0 solution only. The Ecorr and Eplt were independent of NO₃⁻ and Cl⁻ at pH 7.0. Initial polarization behaviour of p-GaAs at pH 2.0 and 12.0 followed the Tafel Law for semiconductors quite well. There was a reasonable correlation between the experimental observations and the potential-pH diagram of GaAs-H₂O system. SEM images of polarized samples showed that pits formed in NaCl and NaNO₃ had a different shape, being more elongated in NaCl. However, the walls of all pits appeared to be composed of {111} planes. In general, the pit distribution appeared to be similar to the dislocation distribution. A model of pitting corrosion of GaAs was proposed based on strain induced breakdown of the oxide film, localized changes in solution chemistry and the structure of the compound semiconductor. / Applied Science, Faculty of / Materials Engineering, Department of / Graduate

El texto completo de este trabajo no está disponible en el Repositorio Académico UPC por restricciones de la casa editorial donde ha sido publicado. / The electronic structure, band structure and optical properties of compounds GaAs(1−x)Mx (M = Fe,Cu), for x=0.25, 0.75, and 1 are discussed via Full-potential linearized augmented plane wave calculations. An increase in absorption in the visible spectrum is observed for all compounds, which, however, is associated with an increasingly metallic character as the metal concentration increases, to the point that compound GaFe is an indirect degenerate semiconductor. The addition of Fe and Cu to the compound decreases its stability, as demonstrated by the formation enthalpies, which become progressively more positive as the content in As is decreased. The calculations were performed using both the PBE and PBEsol exchange correlation potentials and the TB-mBJ method was used to verify the band structure obtained. / Consejo Nacional de Ciencia, Tecnología e Innovación Tecnológica / Revisón por pares

III-V semiconductor nanowires (NWs) are often referred to as one-dimensional (1-D) materials because of their high aspect ratios and excellent quantum confinement properties. Spacing between NWs in a NW array is on the order of ~102 nm, which is close to the wavelength of visible light. These properties make NWs have excellent light trapping effects and suitability for optoelectronic applications, such as solar cells and photodetectors. Gallium arsenide (GaAs) has high electron mobility and a band gap of 1.424 eV, which makes it an ideal material for solar cells. Since GaAs NWs can be grown on either GaAs substrates or foreign substrates such as silicon (Si) substrates without lattice mismatch issues, they are being widely studied for photovoltaic applications. GaAs NWs could be achieved by the vapor-liquid-solid (VLS) method in molecular beam epitaxy (MBE), or etching a GaAs substrate by inductively coupled plasma reactive ion etching (ICP-RIE). Cyclotene was used as the filling material in gaps between NWs to support a low sheet resistance front contact and prevent shunts. An In/ITO contact was developed to achieve a lower contact resistance to n-GaAs NWs than an ITO contact, while it had a similar transmittance as ITO. A crack test also showed that insertion of a thin indium layer between ITO and GaAs NWs solved the ITO crack issue during heating that resulted from a large difference in coefficients of thermal expansion (CTE) between ITO and cyclotene. Energy dispersive x-ray spectrometry (EDS) was used to determine indium diffusion into NWs, and it showed that indium diffusion was not so significant to damage the features in NWs. A novel method to achieve substrate-free NW arrays by combining ICP-RIE and selective chemical etching together was also introduced. This method made it possible to measure the transmittance of NW arrays and contact layers for the first time. Absorption of GaAs NW arrays with various NW diameters and periods were also determined experimentally. / Thesis / Master of Applied Science (MASc)

<p> Using gold as seed particles, the vapour-liquid-solid (VLS) growth of GaAs nanowires by molecular beam epitaxy on GaAs (100) substrates was investigated with a view to understanding and controlling the growth directions of nanowires. The crystallographic orientation as well as surface density of nanowires was found to be significantly affected by surface topography resulting from surface preparation prior to nanowire growth. Elongated pits of varying dimensions and orientation were formed on GaAs (100) substrates depending on the interaction of GaAs with gold or surface oxide. An in-depth analysis was carried out regarding the formation of pits as well as chemical composition of the oxide layer during the seed particle formation process. </p> <p> By analyzing the orientation-dependent structural properties of nanowires at different stages of growth, the origin of multi-directionality of nanowires on GaAs (100) substrates has been explored, and it has been shown that the growth directionality of nanowires can be significantly triggered to either the <011> or <111> direction by optimizing the growth rate as well as size of seed particles. Crystallographic properties of nanowires have also been discussed with reference to their growth directions.</p> / Thesis / Doctor of Philosophy (PhD)

This thesis describes the design, fabrication and characterisation of an infrared optical waveguide phase modulator. The modulator was fabricated in GaAs utilizing a carrier-concentration-reduction rib waveguide structure with a Schottky diode contact to allow the application of an electric field across the waveguide region. Measurements of the phase modulation are presented with results agreeing with the theoretical predictions of an electrooptic coefficient of 1.2 x 10-12 m/V at 1.15 //m. Fabrication techniques and problems are thoroughly discussed. The second part of this thesis consists of measurements of the quantum confined stark shift in an AlGaAs-GaAs multiple quantum well p-i-n diode structure. The results show useful changes in absorption with applied electric field. Transmission measurements as a function of applied field are presented for TE polarized light in a waveguiding geometry as well as photocurrent measurements in the same geometry and with light incident perpendicular to the MQW layers. Reasonable agreements for the relative field induced shifts of the excitonic feature are found but the absolute position of the feature is blue shifted by 7 meV with respect to the theoretically predicted position. / Thesis / Master of Engineering (ME)

No description available.

The groundwork has been completed for a large new research initiative involving the development of diode lasers for moderate power ultrashort pulse generation. This thesis reports on the status of three core areas of this initiative: InGaAsP/GaAs diode laser design and characterization, split contact device testing, and thin film interference filter deposition and characterization. Two new short wavelength diode laser designs have been realized and tested. A 980 nm laser was designed, using an InGaAsP barrier/waveguide region. This showed improved far field performance and better contact isolation as compared to an existing 980 nm laser using GaAs barriers. A laser emitting at 850 nm was also designed using GaAs quantum wells surrounded by a new quaternary waveguide region. A test arrangement was developed to facilitate the measurement of IV and LI curves for split contact lasers. Numerous lasers were tested, indicating that short absorber sections and narrow gap widths are preferable for use as saturable absorbing regions in a passively mode locked diode laser. Finally, thin film silicon oxynitride interference filters have been designed, deposited, and characterized for several antireflecting and high reflectance coatings on semiconductor laser facets. A comparison ofsingle layer AR coatings accounting for the modal reflectivity was performed. A four layer high reflectance coating with a peak broadband reflectance of over 90% was deposited on a laser facet. / Thesis / Master of Engineering (ME)

The goal of this dissertation work was to develop pulsed terahertz radiation techniques and use them to study different properties of the semiconductor materials and semiconductor devices. Three groups of materials were investigated: GaAsBi, GaAs nanowires, copper-indium chalcogenide. The used techniques are THz-TDS, optical pump – THZ probe, optical pump – optical probe and THz excitation spectral measurements. The main results that were presented in this dissertation are the following: thermal annealing has resulted in the shortening of electron lifetime in GaAsBi to picosecond values, which is important achievement for the application of this material in THz range components. In GaAsBi layers with larger than 10% Bi content absorption bleaching recovering on the picosecond time scale and its saturation can be realized when the wavelengths of the optical signals are as long as 1600 nm. The results of these studies can be applied in the production of SESAM with bismide absorption layer. The samples with GaAs nanowires emit THz radiation several times better than the bulk GaAs substrates due to enhanced light absorption because of localized surface plasmon resonances in GaAs nanowires. THz emission efficiency from thin copper-indium chalcogenide layers strongly depends on their stoichiometry and on the parameters of the top transparent contact layers, thus it can be used for the mapping of built-in electric fields in solar cells made from these layers. / Šio darbo tikslas buvo susipažinti su terahercinių impulsų generavimo ir detektavimo būdais, įsisavinti įvairias terahercinių impulsų panaudojimo metodikas bei pritaikyti jas puslaidininkių medžiagų ir puslaidininkinių prietaisų tyrimui. Buvo tirtos trys medžiagų grupės: GaAsBi, GaAs nanovielutės ir Cu – In chalkogenidai. Tyrimui buvo naudojamos: THz – TDS, optinio žadinimo – THz zondavimo, optinio žadinimo – optinio zondavimo bei THz sužadinimo spektroskopijos metodikos. Pagrindiniai rezultatai aprašyti disertacijoje yra šie: GaAsBi bandinių atkaitinimas stipriai sumažino krūvininkų gyvavimo trukmes, kas yra naudinga THz komponentų gamyboj. Optinio praskaidrėjimo efektas ir pikosekundžių eilės krūvininkų gyvavimo trukmės GaAsBi epitaksiniuose sluoksniuose su 10% ir daugiau Bi atomų stebimas žadinant juos optine spinduliuote, kurios bangos ilgiai siekia iki 1600 nm. Šios GaAsBi bandinių savybės leidžia juos priakyti įsisotinančių sugėriklių veidrodžių gamyboje. Bandiniai su GaAs nanovielutėmis emituoja THz spinduliuotę kelis kartus geriau nei GaAs padėklas, dėl padidėjusios sugerties, kurią skatina paviršinių optinių plazmonų rezonansai GaAs nanovielutėse. THz emisijos efektyvumas iš Cu-In chalkogenidų sluoksnių stipriai priklauso nuo jų stechiometrijos ir viršutinio skaidraus kontakto parametrų, ir gali būti naudojamas saulės elementų, pagamintų šių sluoksnių pagrindu, vidinių elektrinių laukų tyrimui.

Šio darbo tikslas buvo susipažinti su terahercinių impulsų generavimo ir detektavimo būdais, įsisavinti įvairias terahercinių impulsų panaudojimo metodikas bei pritaikyti jas puslaidininkių medžiagų ir puslaidininkinių prietaisų tyrimui. Buvo tirtos trys medžiagų grupės: GaAsBi, GaAs nanovielutės ir Cu – In chalkogenidai. Tyrimui buvo naudojamos: THz – TDS, optinio žadinimo – THz zondavimo, optinio žadinimo – optinio zondavimo bei THz sužadinimo spektroskopijos metodikos. Pagrindiniai rezultatai aprašyti disertacijoje yra šie: GaAsBi bandinių atkaitinimas stipriai sumažino krūvininkų gyvavimo trukmes, kas yra naudinga THz komponentų gamyboj. Optinio praskaidrėjimo efektas ir pikosekundžių eilės krūvininkų gyvavimo trukmės GaAsBi epitaksiniuose sluoksniuose su 10% ir daugiau Bi atomų stebimas žadinant juos optine spinduliuote, kurios bangos ilgiai siekia iki 1600 nm. Šios GaAsBi bandinių savybės leidžia juos priakyti įsisotinančių sugėriklių veidrodžių gamyboje. Bandiniai su GaAs nanovielutėmis emituoja THz spinduliuotę kelis kartus geriau nei GaAs padėklas, dėl padidėjusios sugerties, kurią skatina paviršinių optinių plazmonų rezonansai GaAs nanovielutėse. THz emisijos efektyvumas iš Cu-In chalkogenidų sluoksnių stipriai priklauso nuo jų stechiometrijos ir viršutinio skaidraus kontakto parametrų, ir gali būti naudojamas saulės elementų, pagamintų šių sluoksnių pagrindu, vidinių elektrinių laukų tyrimui. / The goal of this dissertation work was to develop pulsed terahertz radiation techniques and use them to study different properties of the semiconductor materials and semiconductor devices. Three groups of materials were investigated: GaAsBi, GaAs nanowires, copper-indium chalcogenide. The used techniques are THz-TDS, optical pump – THZ probe, optical pump – optical probe and THz excitation spectral measurements. The main results that were presented in this dissertation are the following: thermal annealing has resulted in the shortening of electron lifetime in GaAsBi to picosecond values, which is important achievement for the application of this material in THz range components. In GaAsBi layers with larger than 10% Bi content absorption bleaching recovering on the picosecond time scale and its saturation can be realized when the wavelengths of the optical signals are as long as 1600 nm. The results of these studies can be applied in the production of SESAM with bismide absorption layer. The samples with GaAs nanowires emit THz radiation several times better than the bulk GaAs substrates due to enhanced light absorption because of localized surface plasmon resonances in GaAs nanowires. THz emission efficiency from thin copper-indium chalcogenide layers strongly depends on their stoichiometry and on the parameters of the top transparent contact layers, thus it can be used for the mapping of built-in electric fields in solar cells made from these layers.

Poços e super-redes delta-doping tipo são sistemas semicondutores de interesse considerável tanto para a pesquisa básica como para aplicações em dispositivos. Neste trabalho desenvolvemos um novo método para o cálculo de potenciais e estruturas de bandas deste tipo de sistemas. O método baseia-se na expansão em ondas planas da equação da massa efetiva multibandas, usa matrizes de energia cinética de qualquer tamanho e leva em conta o potencial de troca e correlação de uma maneira mais rigorosa do que em trabalhos anteriores. São calculados perfis de potencial e estrutura de minibandas e subbandas bem como a posição do nível de Fermi de uma série de poços isolados e super-redes delta-doping tipo p. São estudadas também as diferenças entre super-redes delta-doping tipo p e tipo n. A partir deste método foi desenvolvido ainda um procedimento de cálculo de espectros de fotoluminescência dos poços estudados. Este procedimento baseia-se nas forças de oscilador das transições entre os buracos confinados no interior do poço e os elétrons livres da banda de condução. Ele é utilizado para calcular funções envelope, integrais de superposição e espectros de transições diretas e indiretas. Por fim, comparamos espectros calculados teoricamente com resultados experimentais extraídos da literatura. / p-type ro-doping quantum wells and superlattices are semiconductor systems of considerable interest for basic research and device applications. In this work, a method for calculating potentials and band structures of such systems is developed. The method relies on a plane wave expansion of the multiband effective mass equation, uses kinetic energy matrices of any size, and takes exchange correlation into account in a more rigorous way than this was done before. The method is used to calculate potential profiles, subband and miniband structures as well as Fermi level positions for a series of p-type delta-doping quantum wells and superlattices. The differences between n- and p-type delta-doping structures are studied. In addition to this we developed a procedure within this method to ca1culate photoluminescence (PL) spectra of the wells studied. It depends on the oscillator strength between the holes inside the wells and the free electrons on the conduction band. We use this procedure to calculate envelope functions, overlap integrals and direct and indirect transitions spectra. Finally, we compare our theoretical calculations of PL spectra with experimental results extracted from the literature.