Graphene is a two-dimensional carbon based material with unique properties, such as electrical and thermal conductivity. When a textile is coated with graphene, it becomes conductive, while remaining low weight, soft, breathable, flexible, and stretchable. The purpose of this thesis is to investigate what products are suitable to be made with graphene textiles, by using the method Material Driven Design (MDD). Reflections are also made to determine how this method is affected by being applied to a two-dimensional material. To help with this, three kinds of graphene textiles from the company Grafren AB are investigated; conductive textiles, heatable textiles, and textile sensors. The product goal is to develop a portfolio containing 5-8 conceptual products based on these graphene textiles. The process includes conducting an investigation of the technical properties of the material, a user study, and a benchmarking study. This is done to understand the limitations and opportunities of the material, how it is perceived, and what similar materials there are on the market. After that, the material's characteristics are reflected upon to establish a vision for how it should be used in future applications. Then, to follow that vision, a user study is conducted to investigate how people perceive different materials and products, in order to create design guidelines to ensure that the material and product are perceived as intended. Next, concepts are developed according to the previously determined guidelines. To achieve this, idea generating workshops are conducted, where 14 concepts are selected for further development. The portfolio is then created, meant to inspire further usage of the material. It contains the following seven concepts. A heatable textile meant for cooking on camping trips. A fabric containing sensors that can notify when it is damaged. A keyboard made of fabric, for an easy and comfortable use and transportation. A stroller with sensors and heaters, for a more comfortable and safe user experience. A conductive jacket that can electrocute mosquitoes that come in contact with it. Pressure sensors in a carpet that can keep track of the people inside and provide assistance in emergencies. Gloves with sensors in them that can translate sign language live to text or speech. Since MDD heavily focuses on the sensorial qualities and physical characteristics of the material, the method needs to be adapted to become useful when working with such a versatile two-dimensional material. Fortunately, most adaptations can be made fairly easily. The timing of each step should also be considered, to ensure that the vision and guidelines can be made specific enough to be useful.

This doctoral thesis is focused on the preparation of graphene layers by Chemical Vapor Deposition (CVD) and their utilization for fabrication and characterization of field effect transistors. The theoretical part of the thesis deals with different methods of graphene production and measurement of its transport properties. In the first part of the experimental section the growth of polycrystalline graphene and individual graphene crystals with sizes up to 300 m is investigated. Further, graphene layer was also grown on an atomically flat copper foils, which were fabricated in order to achieve the growth of graphene of higher quality. Subsequently, the transport properties of field effect transistors produced from the grown layers were measured. The last two chapters deal with a doping of graphene layer by gallium atoms and X-ray radiation. Whereas the deposition of gallium atoms on the graphene surface causes chemical doping of graphene layer by charge transfer, X-ray irradiation of graphene field effect transistors induces the ionization of positively charged defects in dielectrics, which electrostatically dope a graphene layer.

A fully oxidized state of graphene behaves as a pure insulating while a pristine graphene behaves as a pure conducting. The in-between oxide state in graphene which is the controlled state of oxide behaves as a semiconducting. This is the key condition for tuning optical band gap for the better light emitting property. The controlling method of oxide in graphene structure is known as reduction which is the mixed state of sp2 and sp3 hybrid state in graphene structure. sp2 hybridized domains correspond to pure carbon-carbon bond i.e. pristine graphene while sp3 hybridized domains correspond to the oxide bond with carbon i.e. defect in graphene structure. This is the uniqueness of the graphene-base material. Graphene is a gapless material i.e. having no bandgap energy and this property prevents it from switching device applications and also from the optoelectronic devices applications. The main challenge for this material is to tune as a semiconducting which can open the optical characteristics and emit light of desired color. There may be several possibilities for the modification of graphene-base material that can tune a band gap. One way is to find semiconducting property by doping the defects into pristine graphene structure. Other way is oxides functional groups in graphene structure behaves as defects. The physical properties of graphene depend on the amount of oxides present in graphene structure. So if there are more oxides in graphene structure then this material behaves as a insulating. By any means if it can be reduced then oxides amount to achieve specific proportion of sp2 and sp3 that can emit light of desired color. Further, after achieving light emission from graphene base material, there is more possibility for the study of non-linear optical property. In this work, plasmonic effect in graphene oxide has been focused. Mainly there are two kinds of plasmon effects have been studied, one is long range (surface) and short range (localized) plasmon. For long range plasmon gold thin film was deposited on partially reduced graphene oxide and for short range plasmon silver nanoparticles have used. Results show that there are 10-fold enhancement in light emission from partial graphene oxide coated with gold thin film while 4-fold enhancement from reduced graphene oxide solution with silver nanoparticles. Chemical method and photocatalytic method have been employed for the reduction of graphene oxide for the study of surface plasmon and localized plasmon. For the characterization UV-Vis spectrometer for absorption, spectrofluorophotometer for fluorescent emission, Raman spectrometer for material characterization, photoluminescence and time resolved photoluminescence have been utilized. Silver and gold nanoparticles are spherical of average size of 80 nm and 40 nm have been used as plasmons.

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[ES] Para abordar los desafíos ambientales, la química y los procesos químicos deben ser más sostenibles. Para ello, el desarrollo de nuevos catalizadores especialmente activos es de suma importancia. En catálisis heterogénea, el grafeno ha surgido recientemente como un excelente candidato desde que fue posible aislarlo a partir del grafito. Sus propiedades únicas han despertado un gran interés para aplicarlo en varios campos, desde el refuerzo de matrices poliméricas hasta el desarrollo de materiales para catálisis. En catálisis, su uso como soporte catalítico o como carbocatalizador es todavía objeto de varios estudios. Con el objetivo de preparar catalizadores extremadamente activos en varias reacciones de química fina o de producción de hidrógeno, nuestro trabajo de investigación se ha centrado en el uso de materiales a base de grafeno como soportes catalíticos. Se consideraron diferentes aspectos: La funcionalización del grafeno; al ser un material de baja dimensionalidad, las propiedades del grafeno están estrechamente relacionadas con la química de su superficie. Mediante la fosforilación del óxido de grafeno, hemos demostrado que la estabilidad térmica y la estabilización de las nanopartículas metálicas mejoran significativamente. La combinación de grafeno con otros materiales; Pequeñas nanopartículas de paladio estabilizadas sobre materiales porosos a base de óxido de grafeno y quitosano han demostrado una excelente actividad para la deshidrogenación del formiato de amonio. La estrategia de síntesis adoptada para preparar el grafeno; La pirólisis de películas de alginato de amonio y un precursor de rutenio (Ru) en diferentes atmósferas permitió la preparación de nanopartículas de Ru soportadas en grafeno cuya orientación depende de la atmósfera de pirólisis. Por lo tanto, fue posible una comparación de la actividad catalítica de diferentes facetas cristalográficas. Dopaje de grafeno; la presencia de diferentes heteroátomos en su estructura ha permitido una mejor estabilización de nanopartículas y clusters metálicos. Los materiales basados en nanopartículas de óxido de cobre y grafenos dopados han demostrado poseer una excelente actividad catalítica en la síntesis de nuevas moléculas de interés farmacéutico. / [CA] Per a abordar els desafiaments ambientals, la química i els processos químics han de ser més sostenibles. Per a això, el desenvolupament de nous catalitzadors especialment actius és de summa importància. En catàlisi heterogènia, el grafé ha sorgit recentment com un excel·lent candidat des que va ser possible aïllar-lo a partir del grafit. Les seues propietats úniques han despertat un gran interés per a aplicar-lo en diversos camps,des del reforç de matrius polimèriques fins al desenvolupament de materials per a catàlisis. En catàlisi, el seu ús com a suport catalític o com carbocatalitzador és encara objecte de diversos estudis. Amb l'objectiu de preparar catalitzadors extremadament actius en diverses reaccions de química fina o de producció d'hidrogen, el nostre treball de recerca s'ha centrat en l'ús de materials a base de grafé com a suports catalítics. Es van considerar diferents aspectes: La funcionalització del grafé; a l'ésser un material de baixa dimensionalitat, les propietats del grafé estan estretament relacionades amb la química de la seua superfície. Mitjançant la fosforilació de l'òxid de grafé, hem demostrat que l'estabilitat tèrmica i l'estabilització de les nanopartícules metàl·liques milloren significativament. La combinació de grafé amb altres materials; Xicotetes nanopartícules de pal·ladi estabilitzades sobre materials porosos a base d'òxid de grafé i quitosà han demostrat una excel·lent activitat per a la deshidrogenació del formiat d'amoni. L'estratègia de síntesi adoptada per a preparar el grafé; La piròlisi de pel·lícules de alginat d'amoni i un precursor de ruteni (Ru) en diferents atmosferes va permetre la preparació de nanopartícules de Ru suportades en grafé, l'orientació del qual depén de l'atmosfera de piròlisi. Per tant, va ser possible una comparació de l'activitat catalítica de diferents facetes cristal¿logràfiques. Dopatge de grafé; la presència de diferents heteroàtoms en la seua estructura ha permés una millor estabilització de nanopartícules i clústers metàl·lics. Els materials basats en nanopartícules d'òxid de coure i grafens dopats han demostrat posseir una excel·lent activitat catalítica en la síntesi de noves molècules d'interés farmacèutic. / [EN] To address environmental challenges, chemistry and chemical processes need to be more sustainable. For this, developing new particularly active catalysts is of paramount importance. In heterogeneous catalysis, graphene has emerged as an excellent candidate since it was possible to isolate it from graphite. Its properties have aroused substantial interest, earning it applications in various fields spanning from the reinforcement of polymer matrices to the development of materials for catalysis. In catalysis, its use both as a catalytic support or as a carbocatalyst is still the subject of several studies. Aiming to prepare extremely active catalysts in various fine chemical reactions or hydrogen production, our research work has focused on the use of graphene-based materials as catalytic supports. Different aspects were considered: The functionalization of graphene; being a material of low dimensionality, the properties of graphene are intimately related to the chemistry of its surface. Through phosphorylation of graphene oxide, we have shown that the thermal stability and stabilization of metal nanoparticles are significantly improved. Combination of graphene with other materials; small palladium nanoparticles stabilized on porous materials based on graphene oxide and chitosan have demonstrated excellent activity for the dehydrogenation of ammonium formate. The synthetic strategy adopted to prepare graphene; pyrolysis of films of ammonium alginate and ruthenium precursor (Ru) in different atmospheres enabled the preparation of Ru nanoparticles supported on graphene whose orientation depends on the atmosphere of pyrolysis. Thus, a comparison of the catalytic activity of different crystallographic facets was possible. Doping of graphene; the presence of different heteroatoms in its structure has allowed a better stabilization of metal nanoparticles and clusters. Materials based on copper oxide nanoparticles and tridoped graphene have demonstrated an excellent catalytic activity in the synthesis of new molecules of pharmaceutical interest. / Anouar, A. (2021). Préparation de matériaux à base de graphène et leur application en catalyse [Tesis doctoral]. Universitat Politècnica de València. https://doi.org/10.4995/Thesis/10251/164030

Orientador: Marcelo Batista Hott / Banca: Denis Dalmazi / Banca: Alvaro Soares de Castro / Banca: Fabricio Augusto Barone Rangel / Banca: Humberto Belich Júnior / Resumo: Desde aproximadamente o …nal da década de 1970 efeitos quânticos e topológicos em sistemas da matéria condensada que são mostrados ocorrer a nível teórico em teoria quântica de campos têm atraído a atenção de físicos. Neste contexto, o grafeno representa uma das maiores vertentes de pesquisa dentro dos estudos das ciência dos materiais. O fato das excitações eletrônicas de baixa energia serem descritas por fermions de Dirac, estimulou uma relação frutífera entre a matéria condensada e a física de altas energias, fornecendo cenários propícios para o aparecimento de novos e exóticos fenômenos que são de grande interesse na física da matéria condensada atual. A presente tese aborda particularmente dois tópicos fundamentais da teoria quântica de campos: As Anomalias quânticas e o Fracionamento do número fermiônico. Especí…camente, estamos interessa- dos na realização de ambos fenômenos em redes de grafeno com deformações. No grafeno, um potencial vector de gauge axial surge como produto de deformações locais da rede, na forma de defeitos topológicos ou corrugações suaves. Analisaremos a in‡uência desses campos pseudomagnéticos nos estados eletrônicos para uma partícula, quando interagem com um campo magnético externo, considerando diferentes con…gurações para esses cam- pos. Estudamos o papel que desempenham os estados de modo-zero na indução de um número fermiônico fracionário e sua conexão com a anomalia de paridade / Abstract: Since approximately the late 1970s, topological quantum e¤ects in condensed mat- ter systems that are shown the occur at a theoretical level in quantum …eld theory have attracted the attention of physicists. In this context, the graphene is one of the major lines of research within the studies of materials science. The fact that the electronic exci- tations of low energy are described by Dirac fermions, stimulating a fruitful relationship between condensed matter and high energy physics, providing favorable scenarios for the arising of new and exotic phenomena which are of great interest in the current condensed- matter physics. This thesis addresses particularly two key topics of quantum …eld theory: Quantum anomalies and the fermion number fractionalization. Speci…cally, we are inter- ested in performing both phenomena in deformed graphene lattice. In graphene, an axial vector potential arises as the result of local deformations on the lattice, as topological defects or soft corrugations. We analyze the in‡uence of these pseudo-magnetic …elds on the one-particle states, when interacting with a background magnetic …eld, for di¤erents con…guration for the …elds. We study the role played by zero-mode states in fractional fermion number induced and its connection with the anomaly of parity / Doutor

This thesis describes studies of graphene, single walled carbon nanotubes (SWNTs) and InSb. Optical and electronic measurements probe the effects of high magnetic fields on these low-dimensional systems. Chapter 1 introduces a theoretical description and background behind the materials and physical phenomena studied in this work. The structure and unique properties of carbon nano-materials are described. The experimental methods used in this thesis are described in Chapter 2. Chapter 3 describes magnetotransport measurements on InSb/AlInSb heterostructures revealing that the large energy gaps, and extremely high mobility, associated with this system leads to exceptionally well defined quantum Hall plateaux for both even (Landau level) and odd (spin-split) filling factors. Even higher cyclotron energy gaps are expected in graphene. Chapter 4 reveals that due to a combination of large cyclotron energy gaps and fast electron-phonon energy loss rates, the quantum Hall effect (QHE) in graphene can be observed to unprecedented current densities (43 A/m) and temperatures (> 45 K). The behaviour of epitaxial graphene grown on silicon carbide in the quantum Hall regime is shown to be characterised by a strongly magnetic field dependent carrier density due to charge transfer from surface donor states in the substrate. Chapter 5 shows that polymer wrapping of SWNTs can achieve high quality purified samples. Individual SWNTs were probed using micro-photoluminescence measurements in magnetic fields up to 30 T. The combination of high magnetic fields and high spectral and spatial resolution allowed a detailed study of exciton fine structure. High intensity laser irradiation is shown to induce bound excitons in pristine tubes. The optical properties of a number of tubes are dominated by defect sites which may be imaged along the tube using the magnetic brightening of dark excitons associated with such defects.

In the present thesis, research work to tackle challenges such as large-scale integration, selectivity and low efficiency around different types of nanocarbon based sensors is performed. The findings of these studies are given in the form of peer-reviewed publications and conclusions with future recommendations proposed as a summary. The work focuses on three key sensors types, gas sensors, biosensors and photodetectors. The first key aspect is dielectrophoretic (DEP) deposition of nitrogen doped single-walled carbon nanotubes (N-SWCNTs) and it is used as a route to large-scale assembly of increased reactivity, and thus selectivity, gas sensors. Furthermore, suspended SWCNTs and few layer graphene (FLG) devices are fabricated through a novel process which results in increased surface area transducers and low resistance SWCNTs based devices. Moreover, biosensors face similar challenges to gas sensors with the addition that their selectivity needs to be engineered through the formation of a biomimetic interface due to the nature of the analytes they are destined to investigate. Non-covalent functionalization of graphene using self-assembled phospholipid membranes delivered in a controlled and precise manner by dip-pen nanolithography (DPN) was demonstrated together with a high-speed fabrication process of bioassays onto patterned CVD graphene using a parallel tips system. Lastly, for the case of photodetectors, a SWCNT – nanoplasmonic system is proposed as a solution to the major issue of low quantum efficiency in low dimensionality materials. First, the performance of various geometries and arrangements of Au nanoparticles is explored by transferring a micromechanically exfoliated graphene flake onto them and studying the Raman enhancement that arises due to uncoupled and coupled near-fields. An increase of graphene Raman signal of 103 was observed for the areas suspended between two closely spaced dimers as a result of strong near field coupling when the polarisation of the incident light is parallel to the nanostructures axis. A large-scale integration of SWCNTs positioned in between the dimers using DEP is performed as a demonstration of the scalability of the system.

We discuss the effect of elastic deformations on the electronic properties of atomically thin materials, with a focus on bilayer graphene and MoS2 membranes. In these materials distortions of the lattice translate into fictitious gauge fields in the electronic Dirac Hamiltonian that are explicitly derived here for arbitrary elastic deformations, including in-plane as well as flexural (out-of-plane) distortions. We consider bilayer graphene, where a constant fictitious gauge field causes a dramatic reconstruction of the low energy trigonally warped electronic spectrum inducing topological transitions in the Fermi surface. We then present results of ballistic transport in trigonally warped bilayer graphene with and without strain, with particular focus on noise and the Fano factor. With the inclusion of trigonal warping the Fano factor at the Dirac point is still F = 1/3, but the range of energies which show pseudo diffusive transport increases by orders of magnitude compared to the results stemming out of a parabolic spectrum and the applied strain acts to increase this energy range further. We also consider arbitrary deformations of another two-dimensional membrane, MoS2. Distortions of this lattice also lead to a fictitious gauge field arising within the Dirac Hamiltonian, but with a distinct structure than seen in graphene. We present the full form of the fictitious gauge fields that arise in MoS2. Using the fictitious gauge fields we study the coupling between electronic and mechanical degrees of freedom, in particular the coupling between electrons and excited vibrational modes, or vibrons. To understand whether these effects may have a strong influence on electronic transport in MoS2 we calculate the dimensionless electron-vibron coupling constant for all vibron modes relevant for electronic transport. We find that electron-vibron coupling constant is highly sample specific and that the longitudinal stretching mode is the vibron with the dominant coupling. This however reaches maximum values which are lower than those observed in carbon nanostructures.

The thesis presents experimental studies of device characteristics and vibrational properties of atomic layer thin graphene and molybdenum disulphide (MoS2). We carried out Raman spectroscopic studies on field effect transistors (FET) fabricated from these materials to investigate the phonons renormalized by carrier doping thus giving quantitative information on electron-phonon coupling. Below, we furnish a synoptic presentation of our work on these systems. Chapter1: Introduction Chapter1, presents a detailed introduction of the systems studied in this the¬sis, namely single layer graphene (SLG), bilayer graphene (BLG) and single layer molybdenum disulphide (MoS2). We have mainly discussed their electronic and vibrational properties in the light of Raman spectroscopy. A review of the Raman studies on graphene layers is presented. Chapter2: Methodology and Experimental Techniques Chapter 2 starts with a description of Raman instrumentation. The steps for isolating graphene and MoS 2 flakes and the subsequent device fabrication procedures involving lithography are discussed in detail. A brief account of the top gated field effect transistor (FET) using solid polymer electrolyte is presented. Chapter3: Band gap opening in bilayer graphene and formation of p-n junction in top gated graphene transistors: Transport and Raman studies In Chapter3 the bilayer graphene (BLG) field effect transistor is fabricated in a dual gate configuration which enables us to control the energy band gap and the Fermi level independently. The gap in bilayer energy spectrum is observed through different values of the resistance maximum in the back gate sweep curves, each taken at a fixed top gate voltage. The gate capacitance of the polymer electrolyte is estimated from the experimental data to be 1.5μF/cm2 . The energy gap opened between the valence and conduction bands using this dual-gated geometry is es¬timated invoking a simple model which takes into account the screening of gate induced charges between the two layers. The presence of the controlled gap in the energy band structure along with the p-n junction creates a new possibility for the bilayer to be used as possible source of terahertz source. The formation of p-n junction along a bilayer graphene (BLG) channel is achieved in a electrolytically top gated BLG FET, where the drain-source voltage VDS across the channel is continuously varied at a fixed top gate voltage VT(VT>0). Three cases may arise as VDS is varied keeping VT fixed: (i) for VT-VDS0, the entire channel is doped with electron, (ii) for VT-VDS= 0, the drain end becomes depleted of carriers and kink in the IDS vs VDS curve appears, (iii) for VT-VDS « 0, carrier reversal takes place at the drain end, accumulation of holes starts taking place at the drain end while the source side is still doped with electrton. The verification of the spatial variation of carrier concentration in a similar top gated single layer graphene (SLG) FET device is done using spatially resolved Ra¬man spectroscopy. The signature 2D Raman band in a single layer graphene shows opposite trend when doped: 2D peak position decreases for electron doping while it increases for hole doping. On the other hand, the G mode response being symmetric in doping can act as a read-out for the carrier concentration. We monitor the peak position of the G and the 2D bands at different locations along the SLG FET channel. For a fixed top gate voltage V T , both G and the 2D band frequencies vary along the channel. For a positive VTsuch that VT-VDS= 0, the peak frequencies ωGand ω2DωG/2D occur at the undoped frequency (ωG/2D)n=0 near the drain end while the source end corresponds to non-zero concentration. When VT-VDS<0, Raman spectra from hole doped regions (drain end) in the channels show an blue-shift in ω2Dwhile from the electron doped regions (near source) ω2Dis softened. Chapter4: Mixing Of Mode Symmetries In Top Gated Bilayer And Multilayer Graphene Field Effect Devices In Chapter4, the effect of gating on a bilayer graphene is captured by using Raman spectroscopy which shows a mixing of different optical modes belonging to differ¬ent symmetries. The zone-center G phonon mode splits into a low frequency (Glow) and a high frequency (Ghigh) mode and the two modes show different dependence on doping. The two G bands show different trends with doping, implying different electron-phonon coupling. The frequency separation between the two sub-bands in¬creases with increased doping. The mode with higher frequency, termed as Ghigh, shows stiffening as we increase the doping whereas the other mode, Glow, shows softening for low electron doping and then hardening at higher doping. The mode splitting is explained in terms of mixing of zone-center in-plane optical phonons rep¬resenting in-phase and out-of-phase inter-layer atomic motions. The experimental results are combined with the theoretical predictions made using density functional theory by Gava et al.[PRB 80, 155422 (2009)]. Similar G band splitting is observed in the Raman spectra from multilayer graphene showing influence of stacking on the symmetry properties. Chapter5: Anomalous dispersion of D and 2D modes in graphene and doping dependence of 2D ′and 2D+G bands Chapter 5 consists of two parts: Part A titled “Doping dependent anomalous dispersion of D and 2D modes in graphene” describes the tunability of electron-phonon coupling (EPC) associated with the highest optical phonon branch (K-A) around the zone corner K using a top gated single layer graphene field effect transistor. Raman D and 2D modes originate from this branch and are dispersive with laser excitation energy. Since the EPC is proportional to the slope of the phonon branch, doping dependence of the D and 2D modes is carried out for different laser energies. The dispersion of the D mode decreases for both the electron and the hole doping, in agreement with the recent theory of Attaccalite et. al [Nano Letters, 10, 1172 (2010)]. In order to observe D-band in the SLG samples, low energy argon ion bombardment was carried out. The D peak positions for variable carrier concentration using top-gated FET geometry are determined for three laser energies, 1.96 eV, 2.41 eV and 2.54 eV. However, the dispersion of the 2D band as a function of doping shows an opposite trend. This most curious result is quantitatively explained us¬ing a fifth order process rather than the usual fourth order double resonant process usually considered for both the D and 2D modes. Part B titled “Raman spectral features of second order 2D’ and 2D+G modes in doped graphene transistor” deals with doping dependence of 2D’ and 2D+G bands in single layer graphene transistor. The phonon frequency blue shifts for the hole doping and whereas it red shifts for electron doping, similar to the behaviour of the 2D band. The linewidth of the 2D+G combination mode too follows the 2D trend increasing with doping while that of 2D’ mode remains invariant. Chapter6: New Raman modes in graphene layers using 2eV light Unique resonant Raman modes are identified at 1530 cm−1 and 1445 cm−1 in single, bi, tri and few layers graphene samples using 1.96 eV (633 nm) laser excitation energy (EL). These modes are absent in Raman spectra using 2.41 eV excitation energy. In addition, the defect-induced D band which is observed only from the edges of a pristine graphene sample, is observed from the entire sample region using E L = 1.96 eV. Raman images with peak frequencies centered at 1530 cm−1, 1445 cm−1 and D band are recorded to show their correlations. With 1.96 eV, we also observe a very clear splitting of the D mode with a separation of ∼32 cm−1, recently predicted in the context of armchair graphene nanoribbons due to trigonal warping effect for phonon dispersion. All these findings suggest a resonance condition at ∼2eVdue to homo-lumo gap of a defect in graphene energy band structure. Chapter7: Single and few layer MoS2: Resonant Raman and Phonon Renormalization Chapter 7 is divided into two parts. In Part A “Layer dependent Resonant Raman scattering of a few layer MoS2”, we discuss resonant Raman scattering from single, bi, four and seven layers MoS2. As bulk crystal of MoS2is thinned down to a few atomic layers, the indirect gap widens turning into a direct gap semiconductor with a band gap of 1.96 eV in its monolayer form. We perform Raman study from MoS 2 layers employing 1.96 eV laser excitation in order to achieve resonance condition. The prominent Raman modes for MoS 2 include first order E12g mode at ∼383 cm−1 and the A1gmode at ∼408 cm−1 which are observed under both non resonant and resonant conditions. A1gphonon involves the sulphur atomic vibration in opposite direction along the c axis (perpendicular to the basal plane) whereas for E12g mode, displacement of Mo and sulphur atoms are in the basal plane. With decreasing layer thickness, these two modes shifts in opposite direction, the E12g mode shows a blue shift of ∼2cm−1 while the A1gis red shifted by ∼4cm−1 . Under resonant condi¬tion, apart from E12g and A1gmodes, several new Raman spectral features, which are completely absent in bulk, are observed in single, bi and few layer spectra pointing out the importance of Raman characterization. New Raman mode attributed to the longitudinal acoustic mode belonging to the phonon branch at M along the Γ-M direction of the Brillouin zone is seen at ∼230 cm−1 for bi, four and seven layers. The most intense region of the spectrum around 460 cm−1 is characterized by layer dependent frequencies and spectral intensities with the band near 460 cm−1 becoming asymmetric as the sample thickness is increased. In the high frequency region between 510-630 cm−1, new bands are seen for bi, four and seven layers. In Part B titled “Symmetry-dependent phonon renormalization in monolayer MoS2transistor”, we show that in monolayer MoS2the two Raman-active phonons, A1g and E21 g, behave very differently as a function of doping induced by the top gate voltage in FET geometry. The FET achieves an on-off ratio of ∼ 105 for electron doping. We show that while E12g phonon is essentially unaffected, the A1gphonon is strongly influenced by the level of doping. We quantitatively understand our experimental results through the use of first-principles calculations to determine frequencies and electron-phonon coupling for both the phonons as a function of carrier concentration. We present symmetry arguments to explain why only A1g mode is renormalized significantly by doping. Our results bring out a quantitative under¬standing of electron-phonon interaction in single layer MoS2.