This work explores how GaN devices and advanced control can improve the power density of battery chargers for the plug-in hybrid electric vehicle. Gallium nitride (GaN) devices are used to increase switching frequency and shrink passive components. An innovative DC link reduction technique is proposed and several practical design issues are solved. A multi-chip-module (MCM) approach is used to integrate multiple GaN transistors into a package that enables fast, reliable, and efficient switching. The on-resistance and output charge are characterized. In a double pulse test, GaN devices show fast switching speed. The loss estimation based on the characterization results shows a good match with the measurement results of a 500 kHz GaN-based boost converter. Topology selection is conducted to identify candidates for the PHEV charger application. Popular topologies are reviewed, including non-isolated and isolated solutions, and single-stage and two-stage solutions. Since the isolated two-stage solution is more promising, the topologies consisting of an AC/DC front-end converter and an isolated DC/DC converters are reviewed. The identified candidate topologies are evaluated quantitatively. Finally, the topology of a full bridge AC/DC plus dual active bridge DC/DC is selected to build the battery charger prototype for fixed switching-frequency, low loss, and low realization complexity. The DC link capacitor is one of the major power density barriers of the charger, as its size cannot be reduced by increasing the switching frequency. This work proposed a charging scheme to reduce the DC link capacitance by balancing the ripple power from input and output given that the double-line-frequency current causes minor impact to the battery pack in terms of capacity and temperature rise. An in-depth analysis of ripple power balance, with converter loss considered, unveils the conditions of eliminating the low-frequency DC link capacitors. PWM-zero-off charging where the battery is charged by a current at double-line-frequency and DC/DC stage is turned off at the zero level of the waveform, is also proposed to achieve a better tradeoff between the DC link capacitor size and the charger efficiency. The practical design issues are outlined and the solutions are given at different levels of implementations, including the full bridge building block, the AC/DC stage, and the DC/DC stage. The full bridge section focuses on the solution of a reliable driving and sensing circuitry design. The AC/DC stage portion stresses the modulator improvement, which solves the often-reported issues of the current spike at the zero-crossing of the line voltage for the high frequency totem-pole bridgeless converter. In the DAB section, analytical expressions are given to model the converter operation at various operating conditions, which match well with the measurement results. The overall charging-system operation including the seamless transition of bi-directional power flow and the charging-profile control is verified on a laboratory GaN charger prototype at 500 kHz and 1.8 kW with an efficiency of 92.4%. To push the power density, some bulky components including the control board, the cooling system, and the chassis are redesigned. Together with other already-verified building blocks including full bridges, magnetics, and capacitors, a high-density mock-up prototype with 125 W/in3 power density is assembled. / Ph. D.

The increasing shift towards more electric or all electric aircraft urgently necessitates dc/ac converter systems with high power density. Silicon Carbide (SiC) devices, known for their superior performance over traditional silicon-based devices, facilitate this increase in power density. Nonetheless, achieving optimal power density faces challenges due to the unique requirements and conditions of aircraft applications. A primary obstacle is optimizing the topology and parameters of the dc/ac converter system to achieve high power density while adhering to the stringent aerospace EMI standard DO-160 and bearing current limitations. Electric aircraft demand unmatched reliability, necessitating strict control over EMI noise and bearing currents. These considerations significantly impact the selection of topology and parameters to maximize power density. This dissertation assesses how dc voltage, topology, and switching frequency affect component weight, seeking an optimal mix to enhance power density. The methodology and conclusions are validated through a 200-kW motor drive system designed for electric aircraft. Moreover, traditional dc/ac systems are burdened by the weight and space occupied by separate current sensors and short-circuit protection circuits. This work introduces two innovative current sensors that integrate device current sampling with the functionality of traditional shunt resistors, AC hall sensors, and short-circuit protection circuits, thus improving system density and bandwidth. The first sensor, a PCB-based Rogowski coil, integrates with the gate driver and commutation loops, enhancing power density despite challenges in managing CM noise. The second sensor utilizes parasitic inductance in the power loop, with an integrator circuit and an adaptive compensation algorithm correcting errors from parasitic resistance, ensuring high bandwidth accuracy without needing parasitic resistance information. Variable operation conditions from motors pose another challenge, potentially leading to oversized inverters due to uneven loss distribution among switching devices, exacerbated at extreme operating points like motor start-up. This dissertation investigates the loss distribution in multi-level T-Type neutral point clamped (NPC) topology and proposes a novel loss-balance modulation scheme. This scheme ensures even loss distribution across switches, independent of power factor and modulation index, and is applicable to T-type inverters of any level count. Finally, thermal management and insulation at high altitudes present significant challenges. While power devices may be cooled using conventional liquid cooling solutions, components like AC and EMI filters struggle with complex geometries that can create hot spots or high E-field points, complicating filter design for high current applications. A comprehensive design and optimization methodology based on planar heavy-copper PCB design is proposed. By utilizing flexible 2D or 3D E-field shaping and maximizing thermal transfer from copper to ambient, this methodology significantly improves power density and ensures effective heat dissipation and insulation at altitudes up to 50,000 feet. / Doctor of Philosophy / The increasing shift towards more electric or all electric aircraft urgently necessitates dc/ac converter systems with high power density. Silicon Carbide (SiC) devices, known for their superior performance over traditional silicon-based devices, facilitate this increase in power density. Nonetheless, achieving optimal power density faces challenges due to the unique requirements and conditions of aircraft applications. A primary obstacle is optimizing the topology and parameters of the dc/ac converter system to achieve high power density while adhering to the stringent aerospace EMI standard DO-160 and bearing current limitations. Electric aircraft demand unmatched reliability, necessitating strict control over EMI noise and bearing currents. These considerations significantly impact the selection of topology and parameters to maximize power density. This dissertation assesses how dc voltage, topology, and switching frequency affect component weight, seeking an optimal mix to enhance power density. The methodology and conclusions are validated through a 200-kW motor drive system designed for electric aircraft. Moreover, traditional dc/ac systems are burdened by the weight and space occupied by separate current sensors and short-circuit protection circuits. This work introduces two innovative current sensors that integrate device current sampling with the functionality of traditional shunt resistors, AC hall sensors, and short-circuit protection circuits, thus improving system density and bandwidth. The first sensor, a PCB-based Rogowski coil, integrates with the gate driver and commutation loops, enhancing power density despite challenges in managing CM noise. The second sensor utilizes parasitic inductance in the power loop, with an integrator circuit and an adaptive compensation algorithm correcting errors from parasitic resistance, ensuring high bandwidth accuracy without needing parasitic resistance information. Variable operation conditions from motors pose another challenge, potentially leading to oversized inverters due to uneven loss distribution among switching devices, exacerbated at extreme operating points like motor start-up. This dissertation investigates the loss distribution in multi-level T-Type neutral point clamped (NPC) topology and proposes a novel loss-balance modulation scheme. This scheme ensures even loss distribution across switches, independent of power factor and modulation index, and is applicable to T-type inverters of any level count. Finally, thermal management and insulation at high altitudes present significant challenges. While power devices may be cooled using conventional liquid cooling solutions, components like AC and EMI filters struggle with complex geometries that can create hot spots or high E-field points, complicating filter design for high current applications. A comprehensive design and optimization methodology based on planar heavy-copper PCB design is proposed. By utilizing flexible 2D or 3D E-field shaping and maximizing thermal transfer from copper to ambient, this methodology significantly improves power density and ensures effective heat dissipation and insulation at altitudes up to 50,000 feet.

The objective of this research work is to investigate, design and measurement of a digital predistortion linearizer that is able to compensate the dynamic nonlinear distortion of a High Power Amplifier (PA). The effectiveness of the proposed baseband predistorter (PD) on the performance of a WLAN OFDM transmitter utilizing a nonlinear PA with memory effect is observed and discussed. For this purpose, a 10W Class-A/B power amplifier with a gain of 22 dB, operated over the 3.5 GHz frequency band was designed and implemented. The proposed baseband PD is independent of the operating RF frequency and can be used in multiband applications. Its operation is based on the Hammerstein system, taking into account PA memory effect compensation, and demonstrates a noticeable improvement compared to memoryless predistorters. Different types of modelling procedures and linearizers were introduced and investigated, in which accurate behavioural models of Radio Frequency (RF) PAs exhibiting linear and nonlinear memory effects were presented and considered, based on the Wiener approach employing a linear parametric estimation technique. Three new linear methods of parameter estimation were investigated, with the aim of reducing the complexity of the required filtering process in linear memory compensation. Moreover, an improved wiener model is represented to include the nonlinear memory effect in the system. The validity of the PA modelling approaches and predistortion techniques for compensation of nonlinearities of a PA were verified by several tests and measurements. The approaches presented, based on the Wiener system, have the capacity to deal with the existing trade-off between accuracy and convergence speed compared to more computationally complex behavioural modelling algorithms considering memory effects, such as those based on Volterra series and Neural Networks. In addition, nonlinear and linear crosstalks introduced by the power amplifier nonlinear behaviour and antennas mutual coupling due to the compact size of a MIMO OFDM transmitter have been investigated.

Dans ce projet de thèse, qui s'appuie sur l'optimisation d'un réacteur de croissance du diamant et la construction d'un prototype, nous avons démontré l'épitaxie par étapes de couches de diamant, orientées (100), lourdement dopées au bore sur des couches de dopage plus faible dans le même processus, sans arrêter le plasma. Plus original, nous avons démontré la situation inverse. Nous présentons aussi des croissances assez lentes pour l'épitaxie de films d'épaisseur nanométriques avec de grands sauts de dopage, appelé delta-dopage. L'accent a été porté sur le gain en raideur des interfaces. Nous démontrons la présence d'interfaces fortement abruptes, issues de gravures in-situ optimisées, par une analyse conjointe en spectrométrie de masse à ionisation secondaire et en microscopie électronique en transmission à balayage en champ sombre annulaire aux grands angles. Des super-réseaux de dopages abrupts montrent des pics satellites de diffraction X typiques de la super-période. / The aim of this PhD thesis was to better understand the boron delta-doping of diamond over building a new Microwave Plasma Chemical Vapour Deposition reactor prototype. We succeed to grow step by step heavy on low, and more original, low on heavy boron-doped layers of (100)-oriented diamond in the same process and without stopping the plasma. We also settled growth parameters for a growth rate slow enough to get nanometre-thick homoepitaxial films with boron doping jumps over several orders of magnitude, called delta-doping. We demonstrated the presence of super-sharp interfaces, after optimized in situ etching, by joint Secondary Ion Mass Spectrometry and Scanning Tunneling Electron Microscopy at High-Angle Annular Dark Field analysis. Finally superlattices with abrupt boron doping levels have been grown; they show satellite peaks of X-ray diffraction representative of a super-period.

97% des articles publiés sur les études climatiques racontent que le réchauffement climatique est entièrement causé par les activités humaines. Les gaz émis lors de la production d'énergie électrique ainsi que d'autres gaz rejetés par les voitures ont un réel impact sur l'atmosphère. Une solution consiste à mettre au point des composants présentant des pertes de conduction plus faibles et des caractéristiques de claquage plus élevées qui pourraient être utilisés dans des centrales nucléaires, des cellules de commutation à haute puissance, des voitures hybrides (électriques), etc.De nos jours, les composants à base de silicium contrôlent environ 95% des dispositifs électroniques. Le carbure de silicium SiC et le nitrure de gallium GaN sont actuellement à l’étape de R&D, et commencent à être intégrés dans certains circuits électroniques. D'autres matériaux tels que Ga2O3, AlN ou le diamant sont encore à l’étape de recherche. Les derniers sont connus sous le nom de matériaux à bande ultra large et semblent être la solution requise pour les faibles pertes de puissance. Le diamant est reconnu comme le matériau ultime pour la prochaine génération de composants de puissance en raison de ses propriétés physiques exceptionnelles telles qu'un champ de claquage élevé (>10 MV/cm) permettant d'utiliser le dispositif pour une commande de puissance élevée, une mobilité de porteurs élevée (2 000 cm^2/V.s pour les trous), une vitesse de saturation élevée, une conductivité thermique élevée (22 W/cm.K) pour une parfaite dissipation de chaleur et une faible constante diélectrique. Théoriquement, le diamant est le semi-conducteur offrant le meilleur compromis entre résistance à l'état passant et tension de claquage. En particulier, en raison de l'ionisation incomplète des dopants, il est encore plus efficace à haute température. Diverses diodes Schottky en diamant (SBD) avec de bonnes performances à l’état passant et bloqué (7,7 MV/cm) ont été rapportées. En plus des SBDs, des transistors à effet de champ (FET) ont également été étudiés à travers des oxyde-métal semi-conducteur FETs (MOSFETs) utilisant une surface hydrogénée avec des densités de courant élevées à l'état passant ou des surface oxygéné avec de bonnes caractéristiques de blocage. Pour les composants de haute-tension, il est nécessaire de changer l’architecture de l’électrode afin d’éviter un claquage prématuré due à l’encombrement du champ électrique aux bords. Dans ce but, les techniques de terminaison de bord sont utilisées pour atteindre les caractéristiques idéales. La tâche évidente avant toute fabrication de composant est la partie simulation qui prédit l’optimisation de l’architecture et les caractéristiques attendues. Une bonne prédiction nécessite la connaissance des paramètres du matériau. Les paramètres importants pour le claquage sont les coefficients d'ionisation par impact. Plusieurs coefficients ont été publiés pour le diamant. Toutefois, ils ont été extraits en « fittant » des structures non optimisées, d'où un manque de précision.Dans cette étude, deux structures de terminaisons de bord pour des diodes Schottky, appelées plaque de champ et anneaux à champ flottant, ont été étudiées. Leur efficacité de distribution du champ de surface par analyse de courant induit par faisceau d'électrons (EBIC) a été observée. De plus, des FETs ont été fabriqués et caractérisés, un MESFET et un RB-MESFET. Les FETs présentent un claquage élevé, jusqu’à 3 kV et une faible résistance. Le développement des transistors est indissociable de la diode Schottky, car ils sont tous deux nécessaires à la fabrication de cellules de commutation. Et enfin, les coefficients d'ionisation par impact pour les électrons ont été mesurés à l'aide d’EBIC pour un champ >0,5 MV/cm dans une région sans défaut. Les valeurs mesurées sont (sous l’equation de Chynoweth) an = 971 /cm et bn=2,39x10^6 V/cm. Ces valeurs sont proches des coefficients mesurés expérimentalement et rapportés dans la littérature. / 97% of the published climate studies articles agree with the fact that recent global warming is entirely caused by human activities. The gases emitted to produce electrical energy plus other gases rejected by cars impact considerably on the atmosphere by greenhouse effect (without referring other factors). A solution to this problem is the development of components with lower power conduction losses and higher breakdown characteristics that could be used in nuclear power plants, high power commutation cells, hybrid (electric) cars and so on.The choice of the material to reach low power conduction losses and higher breakdown is of great importance. Nowadays, silicon-based devices control about 95% of all electronic components. Silicon carbide SiC and gallium nitride GaN are at present under research and development and start to be integrated into some electronic circuits. Other materials like Ga2O3, AlN or diamond are under research for power electronic application. The last ones are known as ultra wide bandgap materials and they seem to be the required solution to low power losses. Diamond is recognized as the ultimate material for the next next-generation of power devices owing to its exceptional physical properties such as high breakdown field (>10 MV/cm) to use the device for high power control, high carrier mobility (2000 cm^2/V.s for holes) for fast switching and high frequency devices, high saturation velocity, high thermal conductivity (22 W/cm.K) for a perfect heat dissipation and low dielectric constant. Theoretically, diamond is the best semiconducting material showing the best trade-off between on-resistance and breakdown voltage. Especially, due to the incomplete ionization of the dopant, it is even more efficient at high temperature. Various diamond Schottky barrier diodes (SBDs) with good forward and reverse performances (7.7 MV/cm) were reported. In addition to SBDs, switches diamond field effect transistors (FETs) were also investigated through metal-oxide-semiconductor FETs (MOSFETs) using either an H-terminated diamond surface with high current densities in on-state or an O-terminated one with high blocking characteristics. For the high blocking voltage devices, one needs to properly terminate the edge of the electrode at the surface in order to avoid premature breakdown of the devices due to electric field crowding at the borders. In that aim, edge termination (ET) techniques are used to push the limit of the devices and reach ideal features. The obvious task before any device fabrication if the simulation part that predicts the device optimization and expected characteristics. A good device prediction requires knowledge of the material parameters. Important parameters for device breakdown in the off-state are the impact ionization coefficients. At present, several ionization coefficients were reported for diamond, however, they were extracted by fitting non-optimized structures and hence there is a lack of accuracy.In this study, two edge terminations structures for Schottky barrier diodes called field plate (FP) oxide and floating field rings were investigated. Their effectiveness in surface field distribution via electron beam induced current (EBIC) analysis was observed. In addition, normally-on FETs were fabricated and characterized, a MESFET and a reverse blocking (RB)-MESFET. The FETs exhibited a high BV, up to 3 kV and a low on-resistance. The development of transistors is inseparable from the Schottky diode since both are required to fabricate commutation cells. And finally, impact ionization coefficients for electrons were measured using EBIC for a field >0.5 MV/cm in a defect-free region. The measured values are (in a Chynoweth form) an = 971 /cm and bn = 2.39x10^6 V/cm. These values are close to the experimentally measured coefficients reported in the literature.

Depuis plusieurs décennies, les générateurs forts courants sont utilisés dans différents domaines comme l’étude des matériaux, la radiographie ou la fusion par confinement inertiel. Ces générateurs sont capables de délivrer des impulsions de courant de plusieurs millions d’ampères avec des fronts de montée inférieurs à la microseconde. Plusieurs projets à travers le monde ont, aujourd’hui, pour but d’améliorer encore et encore le gradient de courant des impulsions transmises à la charge. De nombreux schémas d’amplificateurs de puissance, dont le rôle est de jouer à la fois sur l’amplitude du courant de charge et sur son temps de montée, ont ainsi été testés. Le multiplicateur de courant dynamique (DLCM pour Dynamic Load Current Multiplier) fait partie de ces concepts novateurs permettant de contourner les limitations des générateurs de puissances pulsées actuels. Il est composé d’un réseau d’électrodes (servant d’autotransformateur), d’un extrudeur de flux dynamique (basé sur l’implosion d’un réseau de fils cylindrique) et d’un commutateur à fermeture sous vide. Dans la thèse, le principe de fonctionnement du DLCM est analysé d’un point de vue théorique par le biais de simulations de type circuits électriques et magnétohydrodynamiques. Une étude spécifique portant sur l’organe principal du DLCM est réalisée. Il s‘agit du commutateur à fermeture sous vide. Ainsi, après une phase de dimensionnement à l’aide d’outils de simulations électrostatiques, deux versions de commutateurs sont validées expérimentalement dans des conditions proches de celles d’un tir très fort courant. Enfin, des tirs sur le générateur SPHINX du CEA Gramat, capable de délivrer une impulsion de courant de 6MA en 800ns (sur charge Z-pinch), sont exposés pour retracer l’évolution du dispositif. Les résultats probants obtenus permettent, au final, de valider le concept DLCM connecté à une charge de type compression isentropique. / For several decades, high power generators are used in various fields such as materials research, radiography or inertial confinement fusion. These generators are capable of delivering current pulses of several millions of amperes with rise times below 1 microsecond. Several projects around the world are, today, trying to improve again and again the current gradient of pulses delivered to the load. Many concepts of power amplifiers, whose role is to optimize both the amplitude of the load current and its rise time, were tested. The Dynamic Load Current Multiplier (DLCM) is one of those innovating concepts used to overcome the existing pulsed power generators limitations. It is made up of concentric electrodes (for autotransformer), a dynamic flux extruder (based on the implosion of cylindrical wire array) and a vacuum closing switch. In this these, the operating principle of the DLCM is theoretically analyzed through electrical and magneto hydrodynamic simulations. A specific study of the DLCM key component is performed. This is the vacuum closing switch. Thus, after a design phase using electrostatic simulation tools, two versions of switches are experimentally validated in conditions similar to those of a very high current shot. Finally, shots on the SPHINX facility located at the CEA Gramat, capable of delivering a current pulse of 6MA in 800ns (on Z-pinch load), are exposed to trace the evolution of this device. The convincing results are used, ultimately, to validate the DLCM concept connected to an isentropic compression experiment load.

Chaque faisceau d'un laser de puissance, tel que le Laser MégaJoule, est mis en forme et voit son énergie amplifiée à l’aide d’une centaine de composants optiques tels que des plaques de verre amplificateur, des lentilles, des miroirs, des lames de phase, des réseaux... 'Evidemment ces composants ne sont pas parfaitement réalisés et ils présentent à leurs surfaces des défauts de fabrication. Ces imperfections peuvent être dues aux outils de polissage des composants, aux dépôts antireflet ou même apparaitre au cours de la phase d’exploitation ou de remédiation du composant. Ces défauts contribuent à une baisse des performances du Laser MégaJoule que ce soit au niveau de l’énergie déposée au centre de la chambre d’expériences ou à l’endommagement accéléré des composants optiques placés en aval. Actuellement la norme ISO 10110-7 est utilisée pour spécifier les défauts d’aspect. Cependant elle manque de justification pour les besoins d’une chaine laser de puissance. Dans le cadre de la thèse nous nous intéressons exclusivement à l’endommagement fratricide local des composants optiques. Un défaut présent à la surface du composant module l’onde lumineuse par phénomène de diffraction. Un << point chaud >> peut apparaitre dans le faisceau laser augmentant alors la densité locale surfacique d’énergie appliquée aux composants suivants. La loi d’endommagement prédit une augmentation de la probabilité d’endommagement puisque la densité d’énergie est modifiée. Une première étude, fondée sur les équations de Fresnel, met en évidence les paramètres intéressants à spécifier pour prédire les intensifications engendrées par des défauts typiques. Le lien entre paramètres du défaut et intensifications diffractées est, ensuite, validité expérimentalement sur des cas réels de défauts. Une seconde étude établit un seuil exprimé en puissance en deçà duquel l'hypothèse d'une propagation linéaire, selon les équations de Fresnel, est valide. La cohérence des résultats donnés par le seuil en puissance et par la simulation numérique renforce l’idée voulant que la propagation d’un << point chaud >> en présence d'effet Kerr soit sensiblement différente de celle d’un faisceau gaussien. Fort de ces deux résultats nous sommes en capacité d'établir une spécification des défauts d’aspect en ayant une meilleure compréhension de l’endommagement fratricide local. / Each beam of a high power laser facility, such as the Laser MégaJoule, is shaped and amplified thanks to hundreds optical components such as amplifier slabs at Brewster’s angle, lenses, mirrors, phase plates, diffraction gratings... Of course, all these components cannot be perfect; there are some defects on their surface. These imperfections appear at each stage of the life of the component, during polishing, coating, or mitigation process or when the component is used on the facility. They have a huge impact on the energy losses delivered on the target and they decrease the resistance of downstream components to intense light. The ISO 10110-7 standard is currently used to specify the visual defects. However, this standard is poorly justified and do not fit a high power laser needs. In this thesis, we are focused on the fratricide effect. Light propagates through a defect, then, some intensity modulations appear along the propagation. The damage law states that high energy density leads to an increase of the damage probability. Firstly, we investigate the characteristic parameters of the defect morphology linked to the formation of downstream << hot spots >>. Then, the link between these typical parameters and the high intensifications are confirmed by experiments on real defects. Secondly, a power criterion is demonstrated to guarantee the linear propagation hypothesis. This criterion is compared to numerical simulations and it is shown how the nonlinear propagation, induced by Kerr effect, can be different between the << hot spot >> formed by a defect and a Gaussian beam. Finally, the results are used to improve the visual defect specification thanks to a better understanding of the fratricide effect.

This thesis report presents a new design of a synchronization unit for high power impulse magnetron sputtering (HiPIMS) applications used for depositing thin films. The proposed system is composed of two major hardware parts: a microcontroller unit (MCU) and a field-programmable gate array (FPGA). The control range of the new system is increased by at least ten times compared to existing synchronization unit designed by Ionautics AB.In order to verify the system and benchmark its innovations, several batches of the thin film have been deposited using the new technology. It is shown that HiPIMS with synchronized pulsed substrate bias can effectively improve coating performance. Pulsed substrate bias with user-defined pulse width and delay time is possible to use in the new control mode proposed by this master thesis work; Bias mode. As a result, this master thesis work enables users to flexibly control the HiPIMS processes.

Un grand nombre d’applications réclament des sources laser en régime impulsionnel toujours plus puissantes et énergétiques. Les progrès continus des technologies laser permettent non seulement d’améliorer les performances de l’outil laser mais aussi d’ouvrir la voie à de nouvelles applications. Cependant, l'augmentation de la puissance des sources laser est aussi accompagnée par une complexification des systèmes. Cette thèse porte sur l’étude d’amplificateurs laser de puissances qui se distinguent par la simplicité de leurs architectures : avec un ou deux passages dans le milieu laser. Dans la première partie, nous étudions le potentiel de la fibre cristalline Yb: YAG pompée par diode en tant qu’amplificateur. Les effets de confinement de l’intensité de pompe au centre de la fibre cristalline par guidage sont étudies théoriquement et expérimentalement. Deux expériences démontrent ensuite l’intérêt de la fibre cristalline Yb:YAG en tant qu’amplificateur de puissance de sources laser à fibres, l’une en régime femtoseconde et l’autre avec un laser mono-fréquence. Par ailleurs, nous explorons le potentiel de notre concept en régime de forte puissance. Une puissance de 250 W en oscillateur et une extraction de 100 W en amplificateur ont été obtenues avec une diode de pompe de 600 W. La deuxième partie traite de l’étude d’amplificateurs à base de cristaux de Nd:YVO4. Le dimensionnement de notre système est réalisé en s’appuyant sur une étude des propriétés du Nd:YVO4. L’amplificateur ainsi obtenu affiche des performances inédites qui se caractérisent par un très fort gain optique (40-60 dB) couplé à une forte extraction de puissance moyenne (10 à 15 W). / A wide range of scientific and industrial applications require pulsed laser sources delivering increasing amount of powers and pulse energies. Continuous progresses in the field of laser technology do not only bring significant process efficiency improvements but also allow developing new applications. However, the complexity of laser sources has significantly increased over the years together with their performance. In contrast, this work focuses on power amplifier architectures which are particularly simple (with one or two passes). In the first part, we study the potential of Yb:YAG single crystal fibers. Pump intensity confinement by the pump beam guiding is studied in details both theoretically and experimentally. Two experiments demonstrate the interest of Yb:YAG single crystal fibers as a power amplifier for fiber based laser sources, one in femtosecond regime and the other one with a single frequency laser. Furthermore, the potential of our architecture is also explored in high power regime. An output power of 250 W for the oscillator and 100 W power extraction with the amplifier were obtained with a 600 W pump diode. The second part describes the study of laser amplifiers using longitudinally pumped Nd:YVO4 bulk crystals. We study the effect of temperature increase in the laser crystal and evaluate the influence of the doping concentration and excited state population on the heat load. Guided by the conclusion of our study, we design a high gain amplifier characterized by very high optical gain (40-60 dB) coupled to a high average power extraction (10 to 15 W)

With the explosive growth of the wireless market, the demand for low-cost and highly-integrated radio frequency (RF) transceiver has been increased. Keeping up with this trend, complimentary metal-oxide-semiconductor (CMOS) has been spotlighted by virtue of its superior characteristics. However, there are challenges in achieving this goal, especially designing the transmitter portion. The objective of this research is to demonstrate the feasibility of fully integrated CMOS transmitter module which includes power amplifier (PA) and transmit/receive (T/R) switch by compensating for the intrinsic drawbacks of CMOS technology. As an effort to overcome the challenges, the high-power handling T/R switches are introduced as the first part of this dissertation. The proposed differential switch topology and feed-forward capacitor helps reducing the voltage stress over the switch devices, enabling a linear power transmission. With the high-power T/R switches, a new transmitter front-end topology - differential PA and T/R switch topology with the multi-section PA output matching network - is also proposed. The multi-stage PA output matching network assists to relieve the voltage stress over the switch device even more, by providing a low switch operating impedance. By analyzing the power performance and efficiency of entire transmitter module, design methodology for the high-power handling and efficient transmitter module is established. Finally, the research in this dissertation provides low-cost, high-power handling, and efficient CMOS RF transmitter module for wireless applications.