Le but de cette thèse est de concevoirun chargeur de véhicule électrique avec une fortedensité de puissance car il doit être embarqué dansle véhicule. La thèse se focalise sur le deuxièmeétage du chargeur qui comporte un transformateur.Cet élément représente une part importante du volumetotal du convertisseur.Pour réaliser cela, une nouvelle technologie de transistorsest utilisée : les transistors GaN. Ces composantsinduisent des pertes par commutation plusfaibles que les transistors classiquement utilisés cequi permet d’augmenter la fréquence de découpage.Cette fréquence est un levier pour améliorer la densitéde puissance des convertisseurs. Cependant lafréquence est également responsable de pertes dansd’autres composants comme le transformateur et lesinductances. Pour augmenter efficacement cette densité, la topologie du convertisseur doit être conçuepour réduire les contraintes sur ces composants.La thèse comporte trois parties. Tout d’abord, lecomportement des transistors GaN est évalué etdifférentes topologies sont analysées pour en déduireune structure de chargeur qui minimise les pertesdans le transformateur. Ensuite, un dimensionnementcompact de transformateur est réalisé à l’aide d’uneétude paramétrique et des simulations par élémentsfinis. Enfin, un prototype de ce deuxième étage duchargeur est réalisé et testé pour évaluer ses performanceset son volume / Improvement of power density is a bigchallenge for embedded electric vehicle chargers.Goal of the study is to reduce the volume of the DCDCcharger which contains a bulky transformer. Thekey point is to use wide band gap transistors (GaN) toincrease the charger switching frequency. High switchingfrequency can improve power density but theinconvenient is the increase of switching and transformerlosses. The PhD dissertation is organized inthree steps. First step is the definition of a charger topology.This topology is optimized to reduce transformerlosses. Second part of the study is the theoreticaldesign of a high power density transformer. A completetransformer parametric model is presented withFinite Element Analysis. Third part present the prototypeand test results of the charger DC-DC. Electricalbehavior, volume and efficiency results are discussedin this part.Universit ´

京都大学 / 0048 / 新制・課程博士 / 博士(工学) / 甲第21732号 / 工博第4549号 / 新制||工||1709(附属図書館) / 京都大学大学院工学研究科電気工学専攻 / (主査)教授 大村 善治, 教授 松尾 哲司, 教授 竹内 繁樹 / 学位規則第4条第1項該当 / Doctor of Philosophy (Engineering) / Kyoto University / DFAM

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The objective of this research work is to investigate, design and measurement of a digital predistortion linearizer that is able to compensate the dynamic nonlinear distortion of a High Power Amplifier (PA). The effectiveness of the proposed baseband predistorter (PD) on the performance of a WLAN OFDM transmitter utilizing a nonlinear PA with memory effect is observed and discussed. For this purpose, a 10W Class-A/B power amplifier with a gain of 22 dB, operated over the 3.5 GHz frequency band was designed and implemented. The proposed baseband PD is independent of the operating RF frequency and can be used in multiband applications. Its operation is based on the Hammerstein system, taking into account PA memory effect compensation, and demonstrates a noticeable improvement compared to memoryless predistorters. Different types of modelling procedures and linearizers were introduced and investigated, in which accurate behavioural models of Radio Frequency (RF) PAs exhibiting linear and nonlinear memory effects were presented and considered, based on the Wiener approach employing a linear parametric estimation technique. Three new linear methods of parameter estimation were investigated, with the aim of reducing the complexity of the required filtering process in linear memory compensation. Moreover, an improved wiener model is represented to include the nonlinear memory effect in the system. The validity of the PA modelling approaches and predistortion techniques for compensation of nonlinearities of a PA were verified by several tests and measurements. The approaches presented, based on the Wiener system, have the capacity to deal with the existing trade-off between accuracy and convergence speed compared to more computationally complex behavioural modelling algorithms considering memory effects, such as those based on Volterra series and Neural Networks. In addition, nonlinear and linear crosstalks introduced by the power amplifier nonlinear behaviour and antennas mutual coupling due to the compact size of a MIMO OFDM transmitter have been investigated.

This thesis focuses on improving the performance of the THz time-domain spectroscopy system using second-order nonlinear crystals for THz generation and detection in terms of bandwidth, sensitivity, and THz field strength. The theories for the THz generation based on optical rectification and detection technique, electro-optical sampling, based on Pockels effect are introduced in Chapter 2. In Chapter 3, some experiments are presented to characterize the performances of the THz system based on a 180 fs Yb:KGW femtosecond laser amplifier operating at 1035 nm. The Yb-based femtosecond laser is becoming increasingly popular due to its robustness, high repetition rate, and high average power. However, the NIR bandwidth of these femtosecond lasers is limited by the gain bandwidth of the gain medium, and achieving pulse durations shorter than 180 fs is challenging. Consequently, the full bandwidth of THz time-domain spectroscopy systems is constrained by such laser systems. In order to broaden the THz bandwidth of such THz time-domain spectroscopy systems, our work in Chapter 4 combines the Yb:KGW femtosecond laser amplifier with an argon-filled hollow-core photonic crystal fiber pulse shaper to spectrally broaden the near-infrared pulses from 3.5 to 8.7 THz, increasing the measured THz bandwidth correspondingly from 2.3 THz to 4.5 THz. This is one of the first works to have broadband THz system based on Yb-based femtosecond lasers in the year of 2018. In Chapter 5, the tilted-pulse-front phase matching in the THz generation and detection scheme is demonstrated using the same surface-etched phase gratings on the front surfaces of the 2 mm-thick GaP generation and detection crystals. This scheme overcomes the THz generation and detection bandwidth limit of thick crystals imposed by the traditional collinear phase matching, while allowing the long nonlinear interaction length. This results in a THz spectral range from 0.1 to 6.5 THz with a peak at 3 THz and a peak dynamic range of 90 dB. In the range between 1.1 and 4.3 THz, the system dynamic range exceeds 80 dB. Based on this contact grating-based THz generation, the next step involves generating high-field THz above 2 THz. For high-field THz generation, the most renowned technique is the tilted-pulse-front technique, which generates high-field THz below 2 THz in a LiNbO₃ crystal. Most nonlinear optics experiments in the THz regime rely on such THz sources. To generate high-field THz above 2 THz, one promising candidate is organic THz crystals. However, most organic crystals require a pump laser with a wavelength exceeding 1200 nm, necessitating a more complex laser system. Additionally, the low damage threshold of these crystals are susceptible to compromise the stability of the measurements. Other techniques, such as air plasma and metallic spintronics, can generate ultra-broadband high-field THz from 0.1 to 30 THz, but the pulse energy within certain frequency windows is relatively low, rendering these THz sources less effective for nonlinearly driving specific optical transitions. On the other hand, semiconductor crystals as THz generation crystals, have a high damage threshold and can achieve good phase matching at wavelength around 800 or 1000 nm. In Chapter 6, high-field THz generation with a peak field of 303 kV/cm and a spectral peak at 2.6 THz is achieved with a more homogenous grating on the surface of a 1 mm-thick GaP generation crystal in a configuration collimating the near-infrared generation beam with a pulse energy of 0.57 mJ onto the generation crystal. The experiments also show that the system operates significantly below the GaP damage threshold and THz generation saturation regime, indicating that the peak THz field strength can approach 1 MV/cm, with a 5 mJ near-infrared generation pulse. This is the first high-field THz source based on semiconductor crystals capable of generating high-field THz above 2 THz. With such a THz source, we can conduct nonlinear optics experiments above 2 THz, including the study of phonon-assisted nonlinearities, coherent control of Bose-Einstein condensation of excitons and polaritons in semiconductor cavities, and saturable absorption in molecular gases.

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Die Elektrifizierung unserer Gesellschaft verlangt eine stetige Innovation von elektrischen Bauteilen. Ein vielversprechendes Material ist der transparente Halbleiter ß-Ga2O3. Mit seiner hohen Bandlücke von 4,8 eV bietet das Material gute Voraussetzungen, um im Bereich der Hochleistungselektronik verwendet zu werden. In dieser Arbeit wurden die elektrischen und thermischen Leitungseigenschaften von ß-Ga2O3 untersucht. Dabei werden die Streumechanismen, die den Transport von Elektronen oder Phononen bestimmen, diskutiert. Es wurde eine Abhängigkeit der Ladungsträgerbeweglichkeit von der Schichtdicke der leitfähigen homoepitaktischen ß-Ga2O3 Schichten festgestellt. Während in Volumenproben und dicken Schichten (>150 nm) eine Kombination aus Streuung von Elektronen an Phononen und an ionisierten Störstellen den Transport dominiert, so spielen bei dünnen Schichten Grenzflächeneffekte eine Rolle. Dieser Effekt konnte mit einer modifizierten Variante des Modells nach Bergmann beschrieben werden. Messungen der Wärmeleitfähigkeit haben deren aus der Literatur bekannte Anisotropie bei Raumtemperatur bestätigt. Die Wärmeleitfähigkeit steigt mit sinkender Temperatur, bis bei etwa 30 K ein Maximum von über 1000 W/(mK) erreicht wird. Anhand der mittleren freien Weglängen der Phononen konnte gezeigt werden, dass der Wärmetransport oberhalb von 80 K von Phonon-Phonon Umklappstreuung bestimmt wird. Zwischen 30 K und 80 K zeigt sich der Einfluss von Punktdefektstreuung. Unterhalb von 30 K zeigen sich die Einflüsse der Grenzflächen des Kristalls. Es findet ein Übergang des Phononentransports aus dem diffusiven Transportregime nach Fourier zum ballistischen Phononenstrahlungstransport nach Casimir und Majumdar statt. Eine Betrachtung dieser Materialparameter zeigt, dass ein möglicher Einsatzbereich für ß-Ga2O3 basierte Bauelemente mit flüssigem Stickstoff gekühlte Anwendungen sein könnten. Hier sind sowohl elektrische als auch thermische Parameter gut für hohe Stromdichten geeignet. / The electrification of our society demands continuous innovation in the field of electronic devices. One promising material is the transparent semiconductor ß-Ga2O3. With its high bandgap of 4.8 eV the material shows a great potential to be used in the field of high-power electronics. In this work, the electrical and thermal properties of ß-Ga2O3 have been investigated. The scattering mechanisms that determine the transport of electrons or phonons are discussed. A dependence of the charge carrier mobility on the thickness of the conductive homoepitaxial ß-Ga2O3 layers has been observed. While a combination of electron-phonon scattering (high temperatures) and scattering of electrons on ionized impurities (low temperatures) was shown to dominate the transport in bulk samples and bulk-like layers (>150 nm), in thin layers the influence of boundary scattering plays an increasing role. This effect could be described by a modified version of the Bergmann scattering model for an ideal thin film. Measurements of the thermal conductivity have reproduced the anisotropy previously reported in literature. The thermal conductivity rises with decreasing temperature until it reaches a maximum at approximately 30 K exceeding 1000 W/(mK). The phonon mean free path showed, that the phonon transport is dominated by phonon-phonon Umklapp-scattering above 80 K. Between 30 K and 80 K the influence of point defect scattering was visible. Below 30 K surface effects influence the thermal transport. A transition from diffusive phonon transport in the Fourier model into ballistic phonon-radiative transport described by Casimir and Majumdar takes place. A comparison of these material parameters with those of materials currently used in high-power electronics like SiC and GaN shows, that a possible application for ß-Ga2O3 are devices, that are cooled with liquid nitrogen. In this temperature range the electrical and thermal conductivity of are both well-suited for high current densities.