The objective of this work was to design and develop a high performance field effect transistor to be suitable for monolithic integration with a photodetector for use in long wavelength optical communication systems. It was decided that the most promising type of device for this application was a junction field effect transistor (JFET), fabricated using the alloy In.53Ga.47As grown epitaxially onto an InP substrate. The requirements for such a device were that it should have high transconductance, low input capacitance, and low gate leakage current (for high receiver sensitivity), and that it should have a structure which would be easily integrated monolithically with the desired type of photodetector - an In.53Ga.47As PIN-photodiode. Although this alloy semiconductor has favourable electron transport properties, at the start of this work, high performance field effect transistors had not been realised in this material. In particular, the In.53Ga.47AS FETs that had been made at that time were characterised by low transconductance. Using a device design that incorporated many novel and efficacious features, the JFET described in this work gave results which greatly surpassed all previous (and current) published results of similar devices. This device not only showed high performance, but the novel design features also enabled a simple fabrication scheme. Having developed this very high performance discrete device, the feasibility of monolithic integration with a In.53Ga.47As PIN-photodiode was demonstrated. Although the physical size and material requirements of these two devices were very different, novel design features enabled the construction of a monolithic PIN-FET combination, in which the performance of the JFET was not compromised.

Gas source molecular beam epitaxy (GSMBE) has been used to grow InGaAs/lnP epitaxial layers in selected areas defined by SiO2-masked InP substrates, with the goal of obtaining controlled in-plane variations in the bandgap of the InGaAs wells. The ability to alter the bandgap of the semiconductor spatially over the surface in one growth procedure is desirable for integrating laser, waveguide and detector devices. To form the masked substrates, stripes (ranging in width from 2 pm to 50 pm) were opened up in SiO2 by standard photolithography. The crystal growths were carried out at various substrate temperatures (ranging from 460 °C to 510 °C) and arsenic fluxes (V/lll ratios ranging from 1.2 to 3.4). The properties of the epitaxial layers were investigated by using such analytical techniques as photoluminescence, electroluminescence and transmission electron microscopy (TEM). Photoluminescence measurements performed on waveguide stripes of decreasing width reveal an increasing red-shift of the e1-hh1 transition in InGaAs wells. The maximum red-shift occurred when growing at a high substrate temperature and a low arsenic flux. For example, a decrease in slit width from 50 pm to 10 pm resulted in a 25 meV shift of the photoluminescence peak. From cross-sectional TEM measurements, the wavelength shift observed can be attributed primarily to an increase in thickness of the InGaAs well, due to incorporation of additional indium and gallium migrating from the material on the masked regions. The interfaces in the centre of the stripe region are defect free; however, stacking faults and thickness variations are evident 1-2 pm from the edges. These results are confirmed by scanning photoluminescence, in which the maximum intensity occurs at the centre of the stripe and decreases to zero at the edges. Mapping of the peak wavelength across the stripe reveals a diffusion profile, with the edges being additionally red shifted by 10 nm. Reactive ion etching of the edge and the polycrystalline material results in a much improved spectral photoluminescence scan, in both increased intensity of the bandgap peak and elimination of lower energy peaks assumed to be correlated with edge effects. Finally, a stripe contact light emitting device, with a single 50 A quantum well InGaAs/lnP structure, was fabricated and electrically pumped. The device exhibited spectral peak wavelength shifts between narrow stripes (10 pm) and wide stripes (50 pm) of 22 nm, similar to the value observed by photoluminescence studies. / Thesis / Master of Engineering (ME)

No description available.

Nos últimos anos, os avanços nas técnicas de crescimento de semicondutores permitiram a fabricação de nanoestruturas isoladas de alta qualidade e com confinamento radial. Essas estruturas quase unidimensionais, conhecidas como nanowires (NWs) têm aplicações tecnológicas vastas, tais como nano sensores químicos e biológicos, foto-detectores e lasers. Seu uso em aplicações tecnológicas requer a compreensão de características óticas e eletrônicas e um estudo teórico mais profundo se faz necessário. O objetivo desse estudo e calcular teoricamente o poder de absorção para NWs de InP e comparar os resultados para as fases cristalinas zincblende (ZB) e wurtzita (WZ) nas suas direções de crescimento equivalentes. Usamos neste estudo a formulação do método k.p que descreve as duas fases cristalinas em um mesmo Hamiltoniano, a aproximação da função envelope e a expansão em ondas planas. O poder de absorção foi calculado a partir das transições entre as bandas de valência e condução através da regra de ouro de Fermi. Mesmo o método k.p sendo o menos custoso computacionalmente, quando comparado com seus correspondentes ab initio, o tamanho das matrizes envolvidas nos cálculos pode ultrapassar a barreira dos giga elementos. Para lidar com essas matrizes, foi implementado um método de resolução de sistemas lineares iterativo, o LOBPCG, utilizando o poder de processamento disponível nas placas gráficas atuais. O novo modo de resolução apresentou ganhos consideráveis em relação ao desempenho observado com os métodos de diagonalização diretos em testes com confinamento em uma única direção. A falta de um pré-condicionador adequado limita o seu uso em NWs. Os cálculos de absorção para NWs na fase ZB apresentaram uma anisotropia em seu espectro de absorção de mais de 90%, enquanto os na fase WZ apresentaram dois regimes distintos de anisotropia, governados pelo aparecimento de um estado oticamente proibido no topo da banda de valência. Em suma, os resultados obtidos com o modelo teórico proposto nesse estudo apresentam as propriedades óticas reportadas na literatura, inclusive o estado oticamente proibido observado em outros sistemas na fase WZ com um alto confinamento quântico. / In recent years, the advances of growth techniques allowed the fabrication of high quality single nanostructures with quantum confinement along lateral directions. These quasi one-dimensional structures known as nanowires (NWs) have vasts technological applications, such as biological and chemical nanosensors, photo detectors and lasers. The applications involving NWs require the comprehension of their optical and electronic properties and, therefore, a deep theoretical understanding should be pursued. The aim of this study is to provide optical absorption theoretical calculations for InP NWs, comparing the results for zincblende (ZB) and wurtzite (WZ) crystal phases, in their equivalent growth directions. We use the k.p method formulation that allow the description of both structures with the same Hamiltonian, the envelope function approximation and the plane wave expansion. The absorption power was calculated for transitions between valence and conduction bands using Fermis Golden Rule. Although the k.p method demands less computational effort, when compared to ab initio calculations, the k.p matrices can break the giga elements barrier. To deal with these matrices, we implemented an linear system solver method, the LOBPCG, using the processing power available in current GPUs. The new resolution method showed a considerable gain comparing the performance of direct diagonalization methods, when tested in systems with confinement in one direction. The lack of an adequate preconditioner limits its use in NWs. The absorption spectra calculations for ZB NWs presented a 90% plus anisotropy, whilst WZ NWs have two distinct regimes, ruled by the presence of an optically forbidden state at valence band maximum. In summary, the results obtained with the theoretical model in this study are in great agreement with optical properties reported in the literature, including the optically forbidden state observed in other WZ systems with high quantum confinement.

Neste trabalho a epitaxia por feixes moleculares (Molecular Beam Epitaxy: MBE) foi utilizada para crescer estruturas de gases bidimensionais a base de In0.53Ga0.47As/ In0.52Al0.48As sobre substrato de fosfeto de índio (InP) e analisar suas propriedades estruturais. elétricas e óticas através de técnicas de caracterização, tais como efeito Hall, fotoluminescência (FL). Shubnikov-de Haas (SdH) e microscopia eletrônica de varredura (MEV). A calibração dos parâmetros de crescimento tais como a taxa de crescimento e a composição das ligas In0.53Ga0.47As/ In0.52Al0.48As foi feita através da observação das oscilações da da difração de elétrons de alta energia observado em reflexão (Reflection High-Energy Electron Difraction : RHEED) A densidade de dopante tipo n (em nosso caso. 0 silício) foi determinada posteriormente através de medidas de efeito Hall usando a técnica de Van der Pauw. Os resultados da Fotoluminescência mostram uma transição doador-banda com largura a meia altura (Full Width at Half Maximum : FWHM) de aproximadamente 23 meV, para a liga de In0.52Al0.48As. A formação de gás bidimensional nestas mesmas amostras tem sido observado indiretamente pela ocorrência de oscilações SdH. / In this work Molecular Beam Epitaxy (MBE) was used to growth bidimensional gas structures based on In0.53Ga0.47As/ In0.52Al0.48As on Indium Phosfate substrate (lnP) Structural. electrical and optical properties were analyzed by characterisation techniques such as Hall eflect, photoluminescence (PL), Shubnikov-de Haas (SdH) and Scanning Electron Microscope (SEM) Growth parameter calibration such as growth rate and alloy composition of In0.53Ga0.47As/ In0.52Al0.48As was determined through observation of Reflexion High-Energy Electron Diffraction (RHEED) oscillation. Density of type dopant (in our case silicon Si) was obtained by. Hall effect measurements using Van der Pauw geometry Photoluminescence results show donor to band transition with Full Width at Half Maxima (FHWM) of approximatly 23meV, for the In0.52Al0.48As alloy. Bidimensional gas formation was indirectly observed in these samples through SdH oscillations.

O crescimento de pontos quânticos a partir do descasamento dos parâmetros de rede tem sido alvo de intensos estudos nos últimos dez anos. Conhecer as propriedades eletrônicas destes materiais é chave para a engenharia de sistemas quânticos. O objetivo deste trabalho é estudar as propriedades eletrônicas de pontos quânticos (QD) de InAS1-x Px enterrados em GaAs, através de Espectroscopia de Capacitância (CV). A Espectroscopia CV é uma técnica que permite determinar os estados eletrônicos e a distribuição de cargas do sistema. As amostras de InAS1-x Px foram crescidas por MOCVD (Low-Pressure Metalorganic Chemical Vapor Deposition) sobre um substrato de GaAs:Cr (001). A estrutura das amostras é do tipo MIS (Metal-Isolante-Semicondutor) com um contato traseiro do tipo n. As medidas de capacitância foram feitas a 4,2 K para diferentes valores de freqüência e campo magnético. A partir da dispersão dos estados confinados com o campo magnético aplicado perpendicular ao plano dos pontos quânticos, pode-se determinar, &#9690, a freqüência natural do sistema. A partir de &#9690, determinou-se &#87470, o comprimento característico da função de onda. A concordância entre os valores de &#87470 com as dimensões laterais dos pontos quânticos obtidos por microscopia eletrônica de transmissão (TEM) é boa. Finalmente, através das medidas de espectroscopia CV pode-se separar os efeitos de confinamento lateral e vertical, permitindo um melhor entendimento dos espectros de fotoluminescência (PL), assim como os detalhes da forma dos QD obtidos por TEM. / The growth of quantum dots in the Stranski-Krastranov mode has been subject of intense investigation in the last decade. Knowing the electronics properties of these materials is key for performing quantum systems engineering. The objective of this work is to study the quantum dots (QD) electronic properties of the InAS1-x Px embedded in GaAs. The study was done by capacitance spectroscopy (CV), which is an experimental tool that allows the evaluation of the electronic states and the charge distribution of a given quantum device. The samples of InAS1-x Px were grown by Low-Pressure Metalorganic Chemical Vapor Deposition on GaAs:Cr (001) substrates. They consist of metalinsulator-semiconductor structures with an n-type back contact. The measurements were performed at 4.2 K for different values of frequencies and magnetic field. From the confined states dispersion as a function of the applied magnetic field, perpendicular to the QD plane, the system natural frequency, &#9690, was determined. From the &#9690, we could determine the wave function characteristic length, &#87470. The concordance between the &#87470, values and the lateral sizes obtained by Transmission Electronic Microscopy (TEM) is good. Finally, by CV spectroscopy we could separate the lateral and vertical confinement effects, leading to a more complete understanding of the Photoluminescence (PL) spectra, as well as the details of the QD shape obtained by TEM.

O crescimento de pontos quânticos a partir do descasamento dos parâmetros de rede tem sido alvo de intensos estudos nos últimos dez anos. Conhecer as propriedades eletrônicas destes materiais é chave para a engenharia de sistemas quânticos. O objetivo deste trabalho é estudar as propriedades eletrônicas de pontos quânticos (QD) de InAS1-x Px enterrados em GaAs, através de Espectroscopia de Capacitância (CV). A Espectroscopia CV é uma técnica que permite determinar os estados eletrônicos e a distribuição de cargas do sistema. As amostras de InAS1-x Px foram crescidas por MOCVD (Low-Pressure Metalorganic Chemical Vapor Deposition) sobre um substrato de GaAs:Cr (001). A estrutura das amostras é do tipo MIS (Metal-Isolante-Semicondutor) com um contato traseiro do tipo n. As medidas de capacitância foram feitas a 4,2 K para diferentes valores de freqüência e campo magnético. A partir da dispersão dos estados confinados com o campo magnético aplicado perpendicular ao plano dos pontos quânticos, pode-se determinar, &#9690, a freqüência natural do sistema. A partir de &#9690, determinou-se &#87470, o comprimento característico da função de onda. A concordância entre os valores de &#87470 com as dimensões laterais dos pontos quânticos obtidos por microscopia eletrônica de transmissão (TEM) é boa. Finalmente, através das medidas de espectroscopia CV pode-se separar os efeitos de confinamento lateral e vertical, permitindo um melhor entendimento dos espectros de fotoluminescência (PL), assim como os detalhes da forma dos QD obtidos por TEM. / The growth of quantum dots in the Stranski-Krastranov mode has been subject of intense investigation in the last decade. Knowing the electronics properties of these materials is key for performing quantum systems engineering. The objective of this work is to study the quantum dots (QD) electronic properties of the InAS1-x Px embedded in GaAs. The study was done by capacitance spectroscopy (CV), which is an experimental tool that allows the evaluation of the electronic states and the charge distribution of a given quantum device. The samples of InAS1-x Px were grown by Low-Pressure Metalorganic Chemical Vapor Deposition on GaAs:Cr (001) substrates. They consist of metalinsulator-semiconductor structures with an n-type back contact. The measurements were performed at 4.2 K for different values of frequencies and magnetic field. From the confined states dispersion as a function of the applied magnetic field, perpendicular to the QD plane, the system natural frequency, &#9690, was determined. From the &#9690, we could determine the wave function characteristic length, &#87470. The concordance between the &#87470, values and the lateral sizes obtained by Transmission Electronic Microscopy (TEM) is good. Finally, by CV spectroscopy we could separate the lateral and vertical confinement effects, leading to a more complete understanding of the Photoluminescence (PL) spectra, as well as the details of the QD shape obtained by TEM.

Nos últimos anos, os avanços nas técnicas de crescimento de semicondutores permitiram a fabricação de nanoestruturas isoladas de alta qualidade e com confinamento radial. Essas estruturas quase unidimensionais, conhecidas como nanowires (NWs) têm aplicações tecnológicas vastas, tais como nano sensores químicos e biológicos, foto-detectores e lasers. Seu uso em aplicações tecnológicas requer a compreensão de características óticas e eletrônicas e um estudo teórico mais profundo se faz necessário. O objetivo desse estudo e calcular teoricamente o poder de absorção para NWs de InP e comparar os resultados para as fases cristalinas zincblende (ZB) e wurtzita (WZ) nas suas direções de crescimento equivalentes. Usamos neste estudo a formulação do método k.p que descreve as duas fases cristalinas em um mesmo Hamiltoniano, a aproximação da função envelope e a expansão em ondas planas. O poder de absorção foi calculado a partir das transições entre as bandas de valência e condução através da regra de ouro de Fermi. Mesmo o método k.p sendo o menos custoso computacionalmente, quando comparado com seus correspondentes ab initio, o tamanho das matrizes envolvidas nos cálculos pode ultrapassar a barreira dos giga elementos. Para lidar com essas matrizes, foi implementado um método de resolução de sistemas lineares iterativo, o LOBPCG, utilizando o poder de processamento disponível nas placas gráficas atuais. O novo modo de resolução apresentou ganhos consideráveis em relação ao desempenho observado com os métodos de diagonalização diretos em testes com confinamento em uma única direção. A falta de um pré-condicionador adequado limita o seu uso em NWs. Os cálculos de absorção para NWs na fase ZB apresentaram uma anisotropia em seu espectro de absorção de mais de 90%, enquanto os na fase WZ apresentaram dois regimes distintos de anisotropia, governados pelo aparecimento de um estado oticamente proibido no topo da banda de valência. Em suma, os resultados obtidos com o modelo teórico proposto nesse estudo apresentam as propriedades óticas reportadas na literatura, inclusive o estado oticamente proibido observado em outros sistemas na fase WZ com um alto confinamento quântico. / In recent years, the advances of growth techniques allowed the fabrication of high quality single nanostructures with quantum confinement along lateral directions. These quasi one-dimensional structures known as nanowires (NWs) have vasts technological applications, such as biological and chemical nanosensors, photo detectors and lasers. The applications involving NWs require the comprehension of their optical and electronic properties and, therefore, a deep theoretical understanding should be pursued. The aim of this study is to provide optical absorption theoretical calculations for InP NWs, comparing the results for zincblende (ZB) and wurtzite (WZ) crystal phases, in their equivalent growth directions. We use the k.p method formulation that allow the description of both structures with the same Hamiltonian, the envelope function approximation and the plane wave expansion. The absorption power was calculated for transitions between valence and conduction bands using Fermis Golden Rule. Although the k.p method demands less computational effort, when compared to ab initio calculations, the k.p matrices can break the giga elements barrier. To deal with these matrices, we implemented an linear system solver method, the LOBPCG, using the processing power available in current GPUs. The new resolution method showed a considerable gain comparing the performance of direct diagonalization methods, when tested in systems with confinement in one direction. The lack of an adequate preconditioner limits its use in NWs. The absorption spectra calculations for ZB NWs presented a 90% plus anisotropy, whilst WZ NWs have two distinct regimes, ruled by the presence of an optically forbidden state at valence band maximum. In summary, the results obtained with the theoretical model in this study are in great agreement with optical properties reported in the literature, including the optically forbidden state observed in other WZ systems with high quantum confinement.

Neste trabalho a epitaxia por feixes moleculares (Molecular Beam Epitaxy: MBE) foi utilizada para crescer estruturas de gases bidimensionais a base de In0.53Ga0.47As/ In0.52Al0.48As sobre substrato de fosfeto de índio (InP) e analisar suas propriedades estruturais. elétricas e óticas através de técnicas de caracterização, tais como efeito Hall, fotoluminescência (FL). Shubnikov-de Haas (SdH) e microscopia eletrônica de varredura (MEV). A calibração dos parâmetros de crescimento tais como a taxa de crescimento e a composição das ligas In0.53Ga0.47As/ In0.52Al0.48As foi feita através da observação das oscilações da da difração de elétrons de alta energia observado em reflexão (Reflection High-Energy Electron Difraction : RHEED) A densidade de dopante tipo n (em nosso caso. 0 silício) foi determinada posteriormente através de medidas de efeito Hall usando a técnica de Van der Pauw. Os resultados da Fotoluminescência mostram uma transição doador-banda com largura a meia altura (Full Width at Half Maximum : FWHM) de aproximadamente 23 meV, para a liga de In0.52Al0.48As. A formação de gás bidimensional nestas mesmas amostras tem sido observado indiretamente pela ocorrência de oscilações SdH. / In this work Molecular Beam Epitaxy (MBE) was used to growth bidimensional gas structures based on In0.53Ga0.47As/ In0.52Al0.48As on Indium Phosfate substrate (lnP) Structural. electrical and optical properties were analyzed by characterisation techniques such as Hall eflect, photoluminescence (PL), Shubnikov-de Haas (SdH) and Scanning Electron Microscope (SEM) Growth parameter calibration such as growth rate and alloy composition of In0.53Ga0.47As/ In0.52Al0.48As was determined through observation of Reflexion High-Energy Electron Diffraction (RHEED) oscillation. Density of type dopant (in our case silicon Si) was obtained by. Hall effect measurements using Van der Pauw geometry Photoluminescence results show donor to band transition with Full Width at Half Maxima (FHWM) of approximatly 23meV, for the In0.52Al0.48As alloy. Bidimensional gas formation was indirectly observed in these samples through SdH oscillations.

La ptychographie est une technique d’imagerie par diffraction cohérente qui vise à récupérer la phase perdue, uniquement par des mesures d’intensité en champ lointain. Cette technique permet l’imagerie des champs de déformation dans des cristaux périodiques avec des résolutions sous-faisceau. Dans ce travail, la ptychographie de Bragg en 3D est utilisée pour étudier les propriétés d’une couche cristalline nanostructurée de InP/InGaAs collée sur un substrat de silicium. L’expérience a été réalisée sur la ligne ID13 de l’ESRF, avec un faisceau monochromatique concentré à 100nm. Les intensités 2D ont été acquises avec plusieurs angles d’incidence dans le voisinage du pic de Bragg InP (004), empilant un jeu de données tridimensionnelles. L’analyse numérique du problème donné a été effectuée à l’avance afin d’optimiser la stratégie d’inversion et d’étudier la possibilité d’introduire des contraintes physiques supplémentaires basées sur des approches de régularisation. L’inversion de l’ensemble des données a été effectuée en utilisant un algorithme ptychographique de reconstruction de phase. L’image 3D récupérée représente la haute qualité cristalline de l’échantillon, avec les valeurs de l’épaisseur et du désaccord de maille attendus en moyenne. Néanmoins, de petites inclinaisons locales de mailles ont été observées - de l’ordre de 0.02°- et confirmées par modélisation numérique. Les résultats démontrent la sensibilité de la technique, ainsi que ses perspectives passionnantes pour l’imagerie des matériaux organiques et inorganiques nanostructurés complexes. / Ptychography is a coherent diffraction imaging technique which aims in retrieving the lost phase from intensity-only far-field measurements. The versatility of the approach has proved an important asset for 3D mapping of different physical quantities, like the electron density of micrometer-sized specimens with resolution in the 10 - 100nm range. In this work, we explored the possibility to push further the current limits of 3D Bragg ptychography, by addressing the case of an extended InP/InGaAs nanostructured thin film, bonded on a silicon wafer. The experiment was performed at the ID13 beamline at ESRF, with a monochromatic beam focused down to 100nm. 2D intensity patterns were acquired at several incidence angles in the vicinity of the InP (004) Bragg peak, stacking up a three dimensional dataset. Numerical analysis of the given problem was performed beforehand in order to optimize the inversion strategy and study the possibility of introducing additional physical constraints through regularization approaches. Inversions of the dataset were done using a ptychographical gradient-based optimization phase retrieval algorithm. The developed strategy was applied on the experimental data which led to the retrieval of a complex-valued 3D image. The result exhibits the high crystallinity quality of the sample with the expected values of thickness and lattice mismatch, nevertheless, small local lattice tilts have been observed - in the order of 0.02°- and confirmed by numerical modeling. This result demonstrates the high sensitivity of the technique, as well as its exciting perspectives for imaging complex organic and inorganic nanostructured materials.