No description available.

In this project, samples with a metal/semiconductor/metal structure were fabricated and investigated with the potential application as the interconnecting layer of a tandem solar cell in mind. Degenerately doped p-Si and n-Si were used as bottom (metal like) contacts, as Si represents one of the most common materials for the bottom cell of tandem devices. A transparent, wide bandgap semiconductor in the form of SnO₂ was investigated for the intermediate layer as it is a common choice for the selective back contact of top cells based on perovskites. However, atomic layer deposition (ALD) was used as an alternative to the typical solution based application of the SnO₂ layer. The top layer was simply chosen as a triple layer metal contact stack (Ni-Al-Ni) to provide for good contact with the SnO₂.The goal of the project was to study the electrical properties of the samples through I-V measurements and how the I-V characteristic depends on the oxide’s thickness under the possible influence of the contact areas. Three different thicknesses of the SnO2 layer were used for the p-Si sample: 50, 200 and 400 Å. For the n-Si samplesonly one thickness (400 Å) was studied. Using the diode equation, four parameterswere calculated (Jo, Rsh, Rs and n) for different measurements combing different contact configurations. The latter included measurements between the front and the back of the samples and measurements between contacts on the front with and/orwithout SnO2 layer. From the results, it was concluded that as the thickness of SnO₂ increases, the saturation current (Jo) decreases while both shunt resistance (Rsh) andseries resistance (Rs) increase. The ideality factor (n) neither depends significantly on effective area, nor on SnO2 thickness. The p-Si and n-Si samples show similar behavior in the case of 400 Å SnO2 thickness. The contact areas only appreciatively affect Jo, but it is not clear what lies behind this dependence. In all cases, the top contacts obtained major wear during measurements, reducing the number of trustworthy measurements that could be used on the smaller areas. The resistivity through the oxide layer was calculated to ρSnO₂ = 247±96 MΩ cm, which is higher than for SnO₂ deposited by other techniques, and too high for tandem cell application. Schottky barriers formed at the interfaces will typically limit the charge transport further.

Deep ventilation of the Black Sea is inhibited by a sharp salinity gradient within the upper water column, resulting in a shallow anoxic interface at around 100 &ndash / 200 m depth. Understanding biological and chemical processes within the boundary region between oxic and anoxic waters is fundamental to comprehend the biogeochemical response of the Black Sea to climate forcing. The structure and depth of the chemocline is largely determined by the physical processes which transport surface waters to depth. Here we investigate how the structure and stability of the upper water column responds to changes in climatic forcing over interannual to multidecadal time-scales. We report results from two hydrodynamic model reanalysis. The first, extending from 1971-1993 assimilates CTD data. The second, extending from 1992-2001, assimilates altimetry data. Model results are validated against CTD and satellite data and consistency between modeled surface properties and observations is demonstrated. A problem with the data assimilation scheme of the 1992 -2001 model run is identified, which results in model drift and an unrealistic water column structure at intermediate depths. Model results indicate a warming trend of 0.7 &deg / C in sea surface temperature and a freshening trend of 0.4 in sea surface salinity between 1971 and 2001, with an associated increasing trend in the stability of the seasonal thermocline and a declining trend in surface mixed layer depth of 6.3 m. Trends are superimposed on a distinct multiannual variability characterized by relatively warm and saline conditions between 1971 and 1984, relatively cool and fresh conditions between 1985 and 1993 and warm and fresh conditions post-1993. The period between 1985 and 1993 corresponds to higher NAO and EA/WR index values although these indices do not exhibit a similar ~decadal scale variability. Higher frequency interannual variability in water column characteristics is related to the NAO and EA/WR atmospheric indices. Despite the cool conditions prevalent during the 1990s, the persistent freshening trend caused a reduction in the density of mixed layer waters throughout the study period. A positive feedback is proposed between increasing SSTs, reduced vertical mixing and freshening of the surface layer which further increases the stability of the upper water column. CIL characteristics typically mirrored surface temperature characteristics and varied considerably between the relatively warm period during the early part of the study and the subsequent cool period. The mean thickness and temperature of the CIL between 1971 and 1981 were ~39 m and ~7.5 &deg / C respectively, as compared to ~47 m and ~7.4 &deg / C between 1982 and 1993. Freshening of the upper water column also resulted in an increase in the stability maxima that exists at the base of the CIL, suggesting reduced ventilation of the upper water column during winter.

<p>Semiconductor wafer bonding has been a subject of interestfor many years and a wide variety of wafer bonding techniqueshave been reported in literature. In adhesive wafer bondingorganic and inorganic adhesives are used as intermediatebonding material. The main advantages of adhesive wafer bondingare the relatively low bonding temperatures, the lack of needfor an electric voltage or current, the compatibility withstandard CMOS wafers and the ability to join practically anykind of wafer materials. Adhesive wafer bonding requires nospecial wafer surface treatmentssuch as planarisation.Structures and particles at the wafer surfaces can be toleratedand compensated for some extent by the adhesive material.Adhesive wafer bonding is a comparably simple, robust andlowcost bonding process. In this thesis, adhesive wafer bondingtechniques with different polymer adhesives have beendeveloped. The relevant bonding parameters needed to achievehigh quality and high yield wafer bonds have been investigated.A selective adhesive wafer bonding process has also beendeveloped that allows localised bonding on lithographicallydefined wafer areas.</p><p>Adhesive wafer bonding has been utilised in variousapplication areas. A novel CMOS compatible film, device andmembrane transfer bonding technique has been developed. Thistechnique allows the integration of standard CMOS circuits withthin film transducers that can consist of practically any typeof crystalline or noncrystalline high performance material(e.g. monocrystalline silicon, gallium arsenide,indium-phosphide, etc.). The transferred transducers or filmscan be thinner than 0.3 µm. The feature sizes of thetransferred transducers can be below 1.5 µm and theelectrical via contacts between the transducers and the newsubstrate wafer can be as small as 3x3 µm2. Teststructures for temperature coefficient of resistancemeasurements of semiconductor materials have been fabricatedusing device transfer bonding. Arrays of polycrystallinesilicon bolometers for use in uncooled infrared focal planearrays have been fabricated using membrane transfer bonding.The bolometers consist of free-hanging membrane structures thatare thermally isolated from the substrate wafer. Thepolycrystalline silicon bolometers are fabricated on asacrificial substrate wafer. Subsequently, they are transferredand integrated on a new substrate wafer using membrane transferbonding. With the same membrane transfer bonding technique,arrays of torsional monocrystalline silicon micromirrors havebeen fabricated. The mirrors have a size of 16x16 µm2 anda thickness of 0.34 µm. The advantages of micromirrorsmade of monocrystalline silicon are their flatness, uniformityand mechanical stability. Selective adhesive wafer bonding hasbeen used to fabricate very shallow cavities that can beutilised in packaging and component protection applications. Anew concept is proposed that allows hermetic sealing ofcavities fabricated using adhesive wafer bonding. Furthermore,microfluidic devices, channels and passive valves for use inmicro total analysis systems are presented.</p><p>Adhesive wafer bonding is a generic CMOS compatible bondingtechnique that can be used for fabrication and integration ofvarious microsystems such as infrared focal plane arrays,spatial light modulators, microoptical systems, laser systems,MEMS, RF-MEMS and stacking of active electronic films forthree-dimensional high-density integration of electroniccircuits. Adhesive wafer bonding can also be used forfabrication of microcavities in packaging applications, forwafer-level stacking of integrated circuit chips (e.g. memorychips) and for fabrication of microfluidic systems.</p>

Semiconductor wafer bonding has been a subject of interestfor many years and a wide variety of wafer bonding techniqueshave been reported in literature. In adhesive wafer bondingorganic and inorganic adhesives are used as intermediatebonding material. The main advantages of adhesive wafer bondingare the relatively low bonding temperatures, the lack of needfor an electric voltage or current, the compatibility withstandard CMOS wafers and the ability to join practically anykind of wafer materials. Adhesive wafer bonding requires nospecial wafer surface treatmentssuch as planarisation.Structures and particles at the wafer surfaces can be toleratedand compensated for some extent by the adhesive material.Adhesive wafer bonding is a comparably simple, robust andlowcost bonding process. In this thesis, adhesive wafer bondingtechniques with different polymer adhesives have beendeveloped. The relevant bonding parameters needed to achievehigh quality and high yield wafer bonds have been investigated.A selective adhesive wafer bonding process has also beendeveloped that allows localised bonding on lithographicallydefined wafer areas. Adhesive wafer bonding has been utilised in variousapplication areas. A novel CMOS compatible film, device andmembrane transfer bonding technique has been developed. Thistechnique allows the integration of standard CMOS circuits withthin film transducers that can consist of practically any typeof crystalline or noncrystalline high performance material(e.g. monocrystalline silicon, gallium arsenide,indium-phosphide, etc.). The transferred transducers or filmscan be thinner than 0.3 µm. The feature sizes of thetransferred transducers can be below 1.5 µm and theelectrical via contacts between the transducers and the newsubstrate wafer can be as small as 3x3 µm2. Teststructures for temperature coefficient of resistancemeasurements of semiconductor materials have been fabricatedusing device transfer bonding. Arrays of polycrystallinesilicon bolometers for use in uncooled infrared focal planearrays have been fabricated using membrane transfer bonding.The bolometers consist of free-hanging membrane structures thatare thermally isolated from the substrate wafer. Thepolycrystalline silicon bolometers are fabricated on asacrificial substrate wafer. Subsequently, they are transferredand integrated on a new substrate wafer using membrane transferbonding. With the same membrane transfer bonding technique,arrays of torsional monocrystalline silicon micromirrors havebeen fabricated. The mirrors have a size of 16x16 µm2 anda thickness of 0.34 µm. The advantages of micromirrorsmade of monocrystalline silicon are their flatness, uniformityand mechanical stability. Selective adhesive wafer bonding hasbeen used to fabricate very shallow cavities that can beutilised in packaging and component protection applications. Anew concept is proposed that allows hermetic sealing ofcavities fabricated using adhesive wafer bonding. Furthermore,microfluidic devices, channels and passive valves for use inmicro total analysis systems are presented. Adhesive wafer bonding is a generic CMOS compatible bondingtechnique that can be used for fabrication and integration ofvarious microsystems such as infrared focal plane arrays,spatial light modulators, microoptical systems, laser systems,MEMS, RF-MEMS and stacking of active electronic films forthree-dimensional high-density integration of electroniccircuits. Adhesive wafer bonding can also be used forfabrication of microcavities in packaging applications, forwafer-level stacking of integrated circuit chips (e.g. memorychips) and for fabrication of microfluidic systems.

[ES] El inicio de esta tesis doctoral parte de los trabajos de investigación desarrollados en el proceso de restauración llevado a término en el conjunto de pinturas de la Galería Dorada del Palau Ducal de Gandia. Se trata de un ciclo pictórico de gran formato instalado en el techo y realizado con la técnica al óleo sobre lienzo, en sustitución de lo que en realidad debería de haber sido solucionado con una técnica al fresco. Los condicionantes establecidos por su tamaño y ubicación comprometieron a través del tiempo su estabilidad, tanto dimensional como estructural, derivando el trabajo de restauración hacia la solución de estos problemas mediante el estudio de sistemas de entelado y testados a través de mediciones físico-mecánicas en el laboratorio. Esta, ha sido la finalidad de nuestra investigación, la de tratar de racionalizar los materiales y técnicas que participan de esta disciplina de la restauración sobre soporte textil, en orden a optimizar recursos de manipulación y soluciones a la siempre controvertida tarea de los entelados. Históricamente, estos procesos tuvieron su origen en Italia y Francia a finales del siglo XVII y comúnmente fueron realizados a través de la utilización de engrudos mediante mezclas de adhesivos naturales a base de colas de pasta, receta que fue rápidamente divulgada en todo occidente. Más adelante, en los Países Bajos, debido a las condiciones medioambientales y geográficas, se modificaron los ingredientes con la inclusión de mezclas de cera resina. Estas dos fórmulas básicas, fueron tomadas como patrón hasta bien entrado el siglo XX, donde a partir de la segunda mitad se empieza a experimentar e introducir paulatinamente los adhesivos a base de resinas sintéticas. Nuestro principal interés y aportación a través de la presente investigación ha sido el estudio de las antiguas técnicas de entelado, así como de sus alteraciones y problemáticas, para dar respuesta a las actuales necesidades en esta materia, y más concretamente en lo referente a las obras de gran formato. La fórmula a través del denominado entelado tipo sándwich ha sido la opción, que después de nuestro testado, ha respondido de forma más idónea a las expectativas abiertas. Mediante la incorporación de este estrato intermedio se ha pretendido alcanzar un nivel óptimo de estabilidad en el soporte, así como de reversibilidad de los tratamientos y, para evitar en última instancia, la interposición de texturas entre estratos. A través del testado de los tres grupos fundamentales de materiales que conforman este tipo de entelado, constituido por: estratos intermedios, tejidos de refuerzo y sistemas adhesivos, se ha elaborado un protocolo de acciones tendentes a la observación de las opciones de mayor garantía para su implantación. Se ha tratado de establecer en este sentido como resultado final, un modelo básico para atender las necesidades de estos sistemas extraordinarios, pero necesarios en los procesos de entelado de gran formato. / [CA] L'inici d'aquesta tesi doctoral part dels treballs de recerca desenvolupats en el procés de restauració dut a terme en el conjunt de pintures de la Galeria Daurada del Palau Ducal de Gandia. Es tracta d'un cicle pictòric de gran format instal·lat en el sostre i realitzat amb la tècnica a l'oli sobre tela, en substitució del que en realitat hauria d'haver sigut solucionat amb una tècnica al fresc. Els condicionants establerts per la seua grandària i ubicació van comprometre a través del temps la seua estabilitat, tant dimensional com estructural, derivant el treball de restauració cap a la solució d'aquests problemes mitjançant l'estudi de sistemes de reentelat i testats a través de mesures físic-mecànics en el laboratori. Aquesta, ha sigut la finalitat de la nostra investigació, la de tractar de racionalitzar els materials i tècniques que participen d'aquesta disciplina de la restauració sobre suport tèxtil, en vistes a optimitzar recursos de manipulació i solucions a la sempre controvertida tasca dels entelats. Històricament, aquests processos van tindre el seu origen a Itàlia i França a les acaballes del segle XVII i comunament van ser realitzats a través de la utilització d'engruts a partir de mescles d'adhesius naturals a base de cues de pasta, recepta que va ser ràpidament divulgada en tot occident. Més endavant, als Països Baixos, a causa de les condicions mediambientals i geogràfiques, es van modificar els ingredients a partir de la inclusió de mescles de cera resina. Aquestes dues fórmules bàsiques, van ser preses com a patró fins a ben entrat el segle XX, on a partir de la segona meitat es comença a experimentar i introduir gradualment els adhesius a base de resines sintètiques. El nostre principal interés i aportació a través de la present investigació ha sigut l'estudi de les antigues tècniques d'entelat, així com de les seues alteracions i problemàtiques, per a donar resposta a les actuals necessitats en aquesta matèria, i més concretament referent a les obres de gran format. La fórmula a través del anomenat reentelat tipus sandvitx ha sigut l'opció, que després del nostre testat, ha respost de forma més idònia a les expectatives obertes. Mitjançant la incorporació d'aquest estrat intermedi s'ha pretés aconseguir un nivell òptim d'estabilitat en el suport, així com de reversibilitat dels tractaments i, per a evitar en última instància, la interposició de textures entre estrats. A través del testat dels tres grups fonamentals de materials que conformen aquest tipus de reentelat, constituït per: estrats intermedis, teixits de reforç i sistemes adhesius, s'ha elaborat un protocol d'accions tendents a l'observació de les opcions de major garantia per a la seua implantació. S'ha tractat d'establir en aquest sentit com a resultat final, un model bàsic per a atendre les necessitats d'aquests sistemes extraordinaris, però necessaris en els processos de reentelat de gran format. / [EN] The beginning of this doctoral thesis is part of the research work developed in the restoration process carried out in the set of paintings of the Golden Gallery of the Ducal Palau of Gandia. It is a large-format pictorial cycle installed on the ceiling and made with oil technique on canvas, replacing what should have actually been solved with a fresco technique. The constraints established by its size and location compromised over time its stability, both dimensional and structural, referring the restoration work to the solution of these problems by studying entealing systems and tested through physical-mechanical measurements in the laboratory. This has been the purpose of our research, to try to rationalize the materials and techniques involved in this discipline of restoration on textile support, in order to optimize handling resources and solutions to the always controversial task of the entealing. Historically, these processes were originated in Italy and France in the late 17th century and were commonly performed through the use of paste from natural adhesive mixtures based on paste glues, recipe that was quickly disseminated throughout the West. Later, in the Netherlands, due to environmental and geographical conditions, the ingredients were modified from the inclusion of resin wax mixtures. These two basic formulas were taken as a pattern until well into the 20th century, where from the second half we begin to experiment and gradually introduce adhesives based on synthetic resins. Our main interest and contribution through this research has been the study of the old entealing techniques, as well as their alterations and problems, to respond to the current needs in this matter, and more specifically with regard to large-format works. The formula through the so-called sándwich type entealing has been the option, which after our testing, has responded more appropriately to open expectations. The incorporation of this intermediate layer has sought to achieve an optimal level of stability in the support, as well as reversibility of the treatments and, to avoid ultimately, the interposition of textures between layers. Through the testing of the three fundamental groups of materials that make up this type of entealing, consisting of: intermediate layers, reinforcing fabrics and adhesive systems, a protocol of actions has been drawn up with a view to observe the most secure options for its implementation. As a results, an attempt has been made to establish a basic model to meet the needs of these extraordinary systems, but necessary in large format entealing processes. / Robles De La Cruz, C. (2022). Estudio del comportamiento físico-mecánico de estratos intermedios en intervenciones generales del soporte textil en pintura sobre tela: aplicabilidad en el ciclo pictórico de Gaspar de la Huerta en la Galería Dorada del Palau Ducal de Gandía [Tesis doctoral]. Universitat Politècnica de València. https://doi.org/10.4995/Thesis/10251/183517 / TESIS

Die vorliegende Arbeit entstand im Rahmen einer Kooperation des Forschungszentrums Dresden-Rossendorf mit Qimonda Dresden GmbH & Co. OHG. Mithilfe der hochauflösenden Rutherford-Streuspektrometrie (HR-RBS) wurden das Diffusionsverhalten und Schichtwachstum von ZrO2 auf SiO2 und TiN im Anfangsstadium untersucht. Auf Grund der exzellenten Tiefenauflösung von 0,3 nm an der Oberfläche stand die Analyse von Konzentrationsprofilen in ultradünnen Schichten, respektive an deren Grenzflächen im Vordergrund. Zur qualitativen Verbesserung der Messergebnisse wurde erstmals ein zweidimensionaler positionsempfindlicher Halbleiterdetektor in den Aufbau der HR-RBS implementiert und charakterisiert. Außerdem wurde ein Messverfahren in Betrieb genommen, das mögliche Schädigungen durch den Ioneneintrag in die Messprobe minimiert. Durch die Optimierung der experimentellen Bedingungen und die Entwicklung eines Programmpaketes zur Unterstützung des Analysten konnte ein effizienter Routine-Messablauf erstellt werden. Im Moment einer binären Kollision zwischen einfallendem Ion und Targetelement kommt es bei kleinem Stoßparameter zu Veränderungen des Ladungszustands der gestreuten Ionen, insbesondere durch die abrupte Geschwindigkeitsänderung des Projektils und der Überlappung der Elektronenwolken. Bei der HR-RBS mit Energie separierendem Dipolmagneten muss zur Interpretation von Streuspektren die Ladungszustandsverteilung der gestreuten Projektile bekannt sein. Erstmalig konnte eine signifikante Abhängigkeit der Ladungszustandsverteilung gestreuter C-Ionen sowohl von der Schichtdicke als auch der Ordnungszahl des detektierten Targetelements, hier der vierten Nebengruppe, nachgewiesen werden. Diese gewonnen Erkenntnisse ermöglichten systematische Untersuchungen zum ZrO2-Schichtwachstum im Anfangsstadium. Zur Herstellung der ZrO2-Schichten wurde die Atomlagenabscheidung (ALD) verwendet. Anhand der nachgewiesenen Agglomeration von ZrO2 auf nativen SiO2 wurde mithilfe der Rasterkraftmikroskopie (AFM) zur Bestimmung von Oberflächenrauigkeiten eine Methode konzipiert, welche die Auswirkung lokaler Schichtdickeninhomogenitäten auf die niederenergetische Flanke eines Streuspektrums berücksichtigt. Auf dieser Grundlage durchgeführte Simulationsrechnungen ergeben, dass keine Diffusion von Zr in die darunter liegende Schicht stattfand, jedoch eine ZrSiO4-Grenzflächenschicht existiert. Für das Wachstum von ZrO2 auf TiN wird aus den hoch aufgelösten Streuspektren ein völlig anderes Verhalten abgeleitet. Messungen zu Oberflächentopografien der TiN-Schicht liefern nicht zu vernachlässigende Werte für die Rauigkeit. Um den Einfluss der Oberflächenrauigkeit auf die Form des hoch aufgelösten Spektrums erfassen zu können, wurde eine Software entwickelt. Auf Basis von AFM-Messungen ermöglicht dieses Programm das Extrahieren einer Energieverteilung aus den Weglängen von ausschließlich an der Oberfläche gestreuten Ionen. Unter Berücksichtigung des Effekts der Oberflächenrauigkeit auf die HR-RBS Spektrenform konnte die Diffusion von Zr in das polykristalline TiN erstmals verifiziert werden. Die Beobachtungen weisen daraufhin, dass bereits nach dem ersten ALD-Zyklus ein geringer Anteil der deponierten Zr-Atome bis in eine Tiefe von etwa 3 nm in das TiN diffundiert. Die vorläufigen Ergebnisse legen Korngrenzendiffusion nahe. / This thesis originated from a cooperation between Research Center Dresden-Rossendorf and Qimonda Dresden GmbH & Co. OHG. By means of High Resolution Rutherford Backscattering Spectrometry (HR-RBS) the diffusion behaviour and layer growth of ZrO2 on SiO2 and TiN in the initial regime were investigated. The analysis of concentration profiles in ultrathin layers and interfaces was the focus of this work, made possible by the excellent depth resolution of less than 0.3 nm near the surface. For the first time a two-dimensional position sensitive semiconductor detector was implemented and characterized in the setup of the HR-RBS for the improvement of the quality of the measurement results. Furthermore, a measurement procedure was put into operation that allowed the reduction of ion induced damage. Through the optimization of the experimental conditions and the development of a program package for the support of the analyst, an efficient measurement procedure could be routinely ensured. At the time of a binary collision between the incident ion and the target element with a small impact factor, the charge state changes frequently, especially due to the abruptly decreasing ion velocity of the projectile and the overlapping of the electron clouds. For HR-RBS with an energy-separating dipole magnet, the charge state distribution of the scattered ions must be known for the interpretation of the measured spectra. For the first time a significant dependence of the charge state distribution of the scattered C ions on the layer thickness as well as atomic number of the detected target elements, here from the fourth subgroup, was emonstrated. This new knowledge allowed systematic investigations of the ZrO2 layer growth in the initial regime. The ZrO2 layers were produced by means of the atomic layer deposition (ALD). Based on the evidence for agglomeration of ZrO2 on SiO2 a method was introduced, which takes local thickness variations into account during the simulation of the HR-RBS spectra. An accurate statement about the ZrO2/SiO2 interface was possible due to the extraction of the thickness variation by the atomic force microscopy (AFM). The boundary surface is sharp except for a small intermediate ZrSiO4 layer and no diffusion of Zr atoms in SiO2 could be detected. A quite different behaviour could be derived from high resolution spectra for the growth of ZrO2 on TiN. Measurements of the surface topography of the TiN layer revealed non negligible values for the surface roughness. A program was developed to capture the influence of the surface roughness on the shape of the high resolution spectrum. This software uses AFM measurements to extract an energy distribution from calculated path length differences for ions scattered at the sample surface. Diffusion of Zr into polycrystalline TiN was demonstrated for the first time taking into account the effect of the surface roughness on the shape of the spectra. This observation indicates that already after the first ALD reaction cycle a small part of the deposited Zr atoms diffuses into the TiN layer up to a depth of 3 nm. Such preliminary results suggest grain boundary diffusion.

Die vorliegende Arbeit entstand im Rahmen einer Kooperation des Forschungszentrums Dresden-Rossendorf mit Qimonda Dresden GmbH & Co. OHG. Mithilfe der hochauflösenden Rutherford-Streuspektrometrie (HR-RBS) wurden das Diffusionsverhalten und Schichtwachstum von ZrO2 auf SiO2 und TiN im Anfangsstadium untersucht. Auf Grund der exzellenten Tiefenauflösung von 0,3 nm an der Oberfläche stand die Analyse von Konzentrationsprofilen in ultradünnen Schichten, respektive an deren Grenzflächen im Vordergrund. Zur qualitativen Verbesserung der Messergebnisse wurde erstmals ein zweidimensionaler positionsempfindlicher Halbleiterdetektor in den Aufbau der HR-RBS implementiert und charakterisiert. Außerdem wurde ein Messverfahren in Betrieb genommen, das mögliche Schädigungen durch den Ioneneintrag in die Messprobe minimiert. Durch die Optimierung der experimentellen Bedingungen und die Entwicklung eines Programmpaketes zur Unterstützung des Analysten konnte ein effizienter Routine-Messablauf erstellt werden. Im Moment einer binären Kollision zwischen einfallendem Ion und Targetelement kommt es bei kleinem Stoßparameter zu Veränderungen des Ladungszustands der gestreuten Ionen, insbesondere durch die abrupte Geschwindigkeitsänderung des Projektils und der Überlappung der Elektronenwolken. Bei der HR-RBS mit Energie separierendem Dipolmagneten muss zur Interpretation von Streuspektren die Ladungszustandsverteilung der gestreuten Projektile bekannt sein. Erstmalig konnte eine signifikante Abhängigkeit der Ladungszustandsverteilung gestreuter C-Ionen sowohl von der Schichtdicke als auch der Ordnungszahl des detektierten Targetelements, hier der vierten Nebengruppe, nachgewiesen werden. Diese gewonnen Erkenntnisse ermöglichten systematische Untersuchungen zum ZrO2-Schichtwachstum im Anfangsstadium. Zur Herstellung der ZrO2-Schichten wurde die Atomlagenabscheidung (ALD) verwendet. Anhand der nachgewiesenen Agglomeration von ZrO2 auf nativen SiO2 wurde mithilfe der Rasterkraftmikroskopie (AFM) zur Bestimmung von Oberflächenrauigkeiten eine Methode konzipiert, welche die Auswirkung lokaler Schichtdickeninhomogenitäten auf die niederenergetische Flanke eines Streuspektrums berücksichtigt. Auf dieser Grundlage durchgeführte Simulationsrechnungen ergeben, dass keine Diffusion von Zr in die darunter liegende Schicht stattfand, jedoch eine ZrSiO4-Grenzflächenschicht existiert. Für das Wachstum von ZrO2 auf TiN wird aus den hoch aufgelösten Streuspektren ein völlig anderes Verhalten abgeleitet. Messungen zu Oberflächentopografien der TiN-Schicht liefern nicht zu vernachlässigende Werte für die Rauigkeit. Um den Einfluss der Oberflächenrauigkeit auf die Form des hoch aufgelösten Spektrums erfassen zu können, wurde eine Software entwickelt. Auf Basis von AFM-Messungen ermöglicht dieses Programm das Extrahieren einer Energieverteilung aus den Weglängen von ausschließlich an der Oberfläche gestreuten Ionen. Unter Berücksichtigung des Effekts der Oberflächenrauigkeit auf die HR-RBS Spektrenform konnte die Diffusion von Zr in das polykristalline TiN erstmals verifiziert werden. Die Beobachtungen weisen daraufhin, dass bereits nach dem ersten ALD-Zyklus ein geringer Anteil der deponierten Zr-Atome bis in eine Tiefe von etwa 3 nm in das TiN diffundiert. Die vorläufigen Ergebnisse legen Korngrenzendiffusion nahe. / This thesis originated from a cooperation between Research Center Dresden-Rossendorf and Qimonda Dresden GmbH & Co. OHG. By means of High Resolution Rutherford Backscattering Spectrometry (HR-RBS) the diffusion behaviour and layer growth of ZrO2 on SiO2 and TiN in the initial regime were investigated. The analysis of concentration profiles in ultrathin layers and interfaces was the focus of this work, made possible by the excellent depth resolution of less than 0.3 nm near the surface. For the first time a two-dimensional position sensitive semiconductor detector was implemented and characterized in the setup of the HR-RBS for the improvement of the quality of the measurement results. Furthermore, a measurement procedure was put into operation that allowed the reduction of ion induced damage. Through the optimization of the experimental conditions and the development of a program package for the support of the analyst, an efficient measurement procedure could be routinely ensured. At the time of a binary collision between the incident ion and the target element with a small impact factor, the charge state changes frequently, especially due to the abruptly decreasing ion velocity of the projectile and the overlapping of the electron clouds. For HR-RBS with an energy-separating dipole magnet, the charge state distribution of the scattered ions must be known for the interpretation of the measured spectra. For the first time a significant dependence of the charge state distribution of the scattered C ions on the layer thickness as well as atomic number of the detected target elements, here from the fourth subgroup, was emonstrated. This new knowledge allowed systematic investigations of the ZrO2 layer growth in the initial regime. The ZrO2 layers were produced by means of the atomic layer deposition (ALD). Based on the evidence for agglomeration of ZrO2 on SiO2 a method was introduced, which takes local thickness variations into account during the simulation of the HR-RBS spectra. An accurate statement about the ZrO2/SiO2 interface was possible due to the extraction of the thickness variation by the atomic force microscopy (AFM). The boundary surface is sharp except for a small intermediate ZrSiO4 layer and no diffusion of Zr atoms in SiO2 could be detected. A quite different behaviour could be derived from high resolution spectra for the growth of ZrO2 on TiN. Measurements of the surface topography of the TiN layer revealed non negligible values for the surface roughness. A program was developed to capture the influence of the surface roughness on the shape of the high resolution spectrum. This software uses AFM measurements to extract an energy distribution from calculated path length differences for ions scattered at the sample surface. Diffusion of Zr into polycrystalline TiN was demonstrated for the first time taking into account the effect of the surface roughness on the shape of the spectra. This observation indicates that already after the first ALD reaction cycle a small part of the deposited Zr atoms diffuses into the TiN layer up to a depth of 3 nm. Such preliminary results suggest grain boundary diffusion.