In consideration of fabrication and cost issue, lately White Organic Light-Emitting Device (WOLED) combined with Color Filter (CF) has become one of promising methods to produce full-color OLED displays. This method adopts the same light source so the lifetime and brightness of Red¡BGreen and Blue emissions are similar and there is no concern for color distortion. In addition, there is no mismatch issue of shadow mask alignment during fabrication. This method not only improve the resolution but also be able to make large size FPD (Flat Panel Displays). In this study, we fabricate White Polymer Light-Emitting Device (WPLED) on custom-built CF, and discuss its full-color characteristics after integration. This study contains four portions: 1.)Fabrication and electro-optical analysis of WPLED on ITO glass 2.)Electro-optical analysis of CF glass 3.)Optical simulation¡GEL(Light-Emitting) spectra of WPLED combined with transmissive spectra of CF 4.)Fabrication and electro-optical analysis of WPLED on CF glass

No description available.

In this research, the contents are divided into two sections. In the first section, we investigated carrier transport behavior of organic optoelectronic devices by using space charge limited current(SCLC) method. Firstly, we fabricated a hole-only device (ITO/Spiro-MeOTAD/Al) for Sprio-MeOTAD and the current density¡V voltage(J-V) characteristics of the device was measured. The J-V characteristics of the device do not match with SCLCs very well at high voltage since the number of hole injection was not enough to achieve SCLCs condition. To enhance the injection of hole carrier into the organic layer, a MoO3 buffer layer was inserted between ITO electrode and organic layer. The current density in device with MoO3 buffer layer achieved 5 times enhancement, indicating that the concentration of hole in MoO3 device is increment. Hence, we succeeded in making the J-V characteristics of the hole-only device to match with SCLCs well at high voltage, and the hole mobility of Sprio-MeOTAD estimated by SCLCs was 1.44¡Ñ10-4cm2/Vs. Li salt was also doped into Sprio-MeOTAD as an n-type dopant. We found that Li salt could form hole-traps in Sprio-MeOTAD, which reduced hole carriers in Spiro-MeOTAD. The current density of the device was decreased, and the device could not achieve SCLCs condition at high voltage. In the second section, we use two novel iridium(Ir) complexes to fabricate blue-green emitting devices by solution process. First, we obtained optimum concentration of phosphorescent emitters by controlling of the dopants concentration. Then, we adjusted the thickness of the electron injection layer, hole injection layer, and emission layer to design more suitable device structure. Finally, we succeeded in fabricating blue-green light emitting devices. The maxima luminescence was 37.7cd/m2 and maxima current efficiency was 1.68 cd/A in the Ir complex based devices.

The polymer light-emitting electrochemical cell (LEC) is an alternative method for producing electroluminescence (EL) from conjugated luminescent polymers. The in situ electrochemical doping process that leads to a dynamic p-n junction makes the devices highly insensitive to device thickness and relatively insensitive to electrode materials. These characteristics make an extremely large planar configuration accessible for observing the cross-section of the device and watching it turn on dynamically. By cooling the device to freeze ionic motion, the junction can be stabilized and photovoltaic (PV) characteristics investigated. In the planar configuration, the p-n junction was found to make up a small fraction of the inter-electrode spacing. Enabled by the insensitivity to electrode materials, small metallic particles embedded in the LEC film led to a large number of p-n junctions that could be turned on in series and parallel. This alleviates the issue of low specific emitting area suffered by planar devices and leads to improved EL effciency as well as a high open circuit voltage (Voc) when operated as a PV cell. The bulk homojunction fabrication process has been optimized by segregating the metallic particles to eliminate large aggregates. A new technique to achieve highly uniform EL from large planar LECs is also presented here. By the evaporation of a thin gold or silver film on top of an LEC, independent islands form that act as doping initiation sites across the device width. A bulk homojunction is turned on in the top layer of the LEC with a high applied bias. Island diameters and spacings are several orders of magnitude smaller than the particles in previously-reported bulk homojunction devices. Both island and particle devices had their interelectrode spacings scaled down by at least a factor of 10. The successful scaling is a promising result for the possibility of a sandwich configuration bulk homojunction device. In the case of silver island devices, cooling a 50-micron wide device after turn-on resulted in a PV cell with an open circuit voltage of 8.3 V, several times the band gap of the luminescent polymer used. / Thesis (Master, Physics, Engineering Physics and Astronomy) -- Queen's University, 2008-09-12 12:21:12.949

Orientador: Dante Luis Chinaglia / Banca: Gerson Santarine / Banca: Valtencir Zucolloto / Resumo: As novas tecnologias para a construção de telas e displays têm permitido reduzir o consumo de energia, o peso e a espessura, como também melhorar a eficiência e flexibilidade se comparado aos antigos monitores de CRTs e até mesmo aos atuais displays de cristal líquido. Dentre estas novas tecnologias destacam-se as que utilizam materiais orgânicos (OLED) ou orgânicos poliméricos (PLED) não somente por suas possibilidades de aplicações industriais, mas também por permitirem o desenvolvimento das ciências básica e aplicada. Seguindo uma linha alternativa, propomos, neste trabalho, um novo compósito híbrido, resultante da combinação de uma fase polimérica e uma fase inorgânica, que, do nosso ponto de vista também poderá contribuir para o desenvolvimento dessa nova geração de displays e telas. Este compósito é formado pela blenda de um polímero condutor dopado, a PANI (polianilina) ou POMA (poli(o-metóxi anilina)), e um polímero isolante, o P(VDF-TrFE) poli(vinilideno-co-trifluoretileno), na qual micro partículas de Zn2SiO4:Mn (SZF) foram adicionadas. Para o desenvolvimento desse novo compósito, estudamos cada um de seus elementos constituintes, notadamente quanto ao seu modo de preparo, características morfológicas e propriedades elétricas. Como resultado final, obtivemos dispositivos constituídos de uma única camada do compósito híbrido depositado por espalhamento sobre um substrato de ITO/FTO, acrescido, ainda, de um eletrodo de alumínio depositado por evaporação. Para a caracterização destes dispositivos foram realizadas medidas de condutividade elétrica, luminescência (L) e fotoluminescência (PL). Os compósitos PANI/P(VDF-TrFE)/SZF 05/95/80 e POMA/P(VDF-TrFE)/SZF 25/75/80 com condutividade elétrica da ordem de 10-3 S/m foram os que melhor se adequaram para a construção dos dispositivos. Os espectros de L e PL apresentaram um pico em ? = 538... (Resumo completo, clicar acesso eletrônico abaixo). / Abstract: New technologies recently applied to the fabrication of organic screens and displays have allowed the manufacture of lighter, thinner monitors in comparison to either the conventional cathodic rays tube (CRTs) or the liquid crystal displays (LCDs). In addition, displays based on organic materials (the so-called organic light emitting displays (OLEDs and the polymeric light emitting displays - PLEDs) may exhibit improved efficiency and flexibility. The organic displays have attracted attention of a number of research groups aimed at investigating the potential applications of these new devices in the electronic industry. In this study, a new hybrid composite comprising an inorganic phase dispersed in a polymeric matrix was investigated as a possible candidate material for displays fabrication. The continuous, organic phase was a blend containing a conducting polymer, viz. polyaniline (PANI) or its derivative poly(o-methoxyaniline) (POMA) and an insulating polymer, P(VDF-TrFE) (Poly(viny1idene fluoride- trifluorethylene)). Micro particles of Zn2SiO4:Mn (SZF) was added to the polymeric phase as the luminescent, active material. Luminescent devices were fabricating using a conventional trilayer architecture in which a thin film of the hybrid composite was deposited between two conducting electrodes. As the anode electrode we used either Indium-TinOxide (ITO) or Fluorine-Tin-Oxide (FTO)-covered glass plates. Evaporated aluminum was used as the cathode electrode. The material/device characterization was carried out using electric conductivity, luminescence (L) and photoluminescence (PL) measurements. PANI/P(VDFTrFE)/ SZF (05/95)/80 and POMA/P(VDF-TrFE)/SZF (25/75)/80 composites compositions presented the best performance, with electric conductivity of ca. 10-3 S/m. Luminescence and photoluminescence measurements revealed that both devices exhibited an emission band centered at 538 nm... (Complete abstract, click electronic address below). / Mestre

abstract: Group III-nitride semiconductors have been commercially used in the fabrication of light-emitting diodes and laser diodes, covering the ultraviolet-visible-infrared spectral range and exhibit unique properties suitable for modern optoelectronic applications. InGaN ternary alloys have energy band gaps ranging from 0.7 to 3.4 eV. It has a great potential in the application for high efficient solar cells. AlGaN ternary alloys have energy band gaps ranging from 3.4 to 6.2 eV. These alloys have a great potential in the application of deep ultra violet laser diodes. However, there are still many issues with these materials that remain to be solved. In this dissertation, several issues concerning structural, electronic, and optical properties of III-nitrides have been investigated using transmission electron microscopy. First, the microstructure of In_xGa_1-xN (<italic>x</italic> = 0.22, 0.46, 0.60, and 0.67) films grown by metal-modulated epitaxy on GaN buffer /sapphire substrates is studied. The effect of indium composition on the structure of InGaN films and strain relaxation is carefully analyzed. High luminescence intensity, low defect density, and uniform full misfit strain relaxation are observed for <italic>x</italic> = 0.67. Second, the properties of high-indium-content InGaN thin films using a new molecular beam epitaxy method have been studied for applications in solar cell technologies. This method uses a high quality AlN buffer with large lattice mismatch that results in a critical thickness below one lattice parameter. Finally, the effect of different substrates and number of gallium sources on the microstructure of AlGaN-based deep ultraviolet laser has been studied. It is found that defects in epitaxial layer are greatly reduced when the structure is deposited on a single crystal AlN substrate. Two gallium sources in the growth of multiple quantum wells active region are found to cause a significant improvement in the quality of quantum well structures. / Dissertation/Thesis / Doctoral Dissertation Physics 2014

Made available in DSpace on 2014-06-11T19:25:31Z (GMT). No. of bitstreams: 0 Previous issue date: 2006-12-18Bitstream added on 2014-06-13T20:53:29Z : No. of bitstreams: 1 biscuola_ma_me_rcla.pdf: 2829290 bytes, checksum: 4f1c3c8a080dce0360b3e6c8d278b78c (MD5) / Coordenação de Aperfeiçoamento de Pessoal de Nível Superior (CAPES) / As novas tecnologias para a construção de telas e displays têm permitido reduzir o consumo de energia, o peso e a espessura, como também melhorar a eficiência e flexibilidade se comparado aos antigos monitores de CRTs e até mesmo aos atuais displays de cristal líquido. Dentre estas novas tecnologias destacam-se as que utilizam materiais orgânicos (OLED) ou orgânicos poliméricos (PLED) não somente por suas possibilidades de aplicações industriais, mas também por permitirem o desenvolvimento das ciências básica e aplicada. Seguindo uma linha alternativa, propomos, neste trabalho, um novo compósito híbrido, resultante da combinação de uma fase polimérica e uma fase inorgânica, que, do nosso ponto de vista também poderá contribuir para o desenvolvimento dessa nova geração de displays e telas. Este compósito é formado pela blenda de um polímero condutor dopado, a PANI (polianilina) ou POMA (poli(o-metóxi anilina)), e um polímero isolante, o P(VDF-TrFE) poli(vinilideno-co-trifluoretileno), na qual micro partículas de Zn2SiO4:Mn (SZF) foram adicionadas. Para o desenvolvimento desse novo compósito, estudamos cada um de seus elementos constituintes, notadamente quanto ao seu modo de preparo, características morfológicas e propriedades elétricas. Como resultado final, obtivemos dispositivos constituídos de uma única camada do compósito híbrido depositado por espalhamento sobre um substrato de ITO/FTO, acrescido, ainda, de um eletrodo de alumínio depositado por evaporação. Para a caracterização destes dispositivos foram realizadas medidas de condutividade elétrica, luminescência (L) e fotoluminescência (PL). Os compósitos PANI/P(VDF-TrFE)/SZF 05/95/80 e POMA/P(VDF-TrFE)/SZF 25/75/80 com condutividade elétrica da ordem de 10-3 S/m foram os que melhor se adequaram para a construção dos dispositivos. Os espectros de L e PL apresentaram um pico em ? = 538... . / New technologies recently applied to the fabrication of organic screens and displays have allowed the manufacture of lighter, thinner monitors in comparison to either the conventional cathodic rays tube (CRTs) or the liquid crystal displays (LCDs). In addition, displays based on organic materials (the so-called organic light emitting displays (OLEDs and the polymeric light emitting displays - PLEDs) may exhibit improved efficiency and flexibility. The organic displays have attracted attention of a number of research groups aimed at investigating the potential applications of these new devices in the electronic industry. In this study, a new hybrid composite comprising an inorganic phase dispersed in a polymeric matrix was investigated as a possible candidate material for displays fabrication. The continuous, organic phase was a blend containing a conducting polymer, viz. polyaniline (PANI) or its derivative poly(o-methoxyaniline) (POMA) and an insulating polymer, P(VDF-TrFE) (Poly(viny1idene fluoride- trifluorethylene)). Micro particles of Zn2SiO4:Mn (SZF) was added to the polymeric phase as the luminescent, active material. Luminescent devices were fabricating using a conventional trilayer architecture in which a thin film of the hybrid composite was deposited between two conducting electrodes. As the anode electrode we used either Indium-TinOxide (ITO) or Fluorine-Tin-Oxide (FTO)-covered glass plates. Evaporated aluminum was used as the cathode electrode. The material/device characterization was carried out using electric conductivity, luminescence (L) and photoluminescence (PL) measurements. PANI/P(VDFTrFE)/ SZF (05/95)/80 and POMA/P(VDF-TrFE)/SZF (25/75)/80 composites compositions presented the best performance, with electric conductivity of ca. 10-3 S/m. Luminescence and photoluminescence measurements revealed that both devices exhibited an emission band centered at 538 nm... (Complete abstract, click electronic address below).

Orientador: Dante Luis Chinaglia / Banca: Clarissa de Almeida Olivati / Banca: Luiz Francisco Malmonge / Resumo: Neste trabalho foi desenvolvido um dispositivo eletroluminescente (EL) constituído de um compósito híbrido (CH), formado por uma blenda polimérica e um material EL inorgânico. A blenda é composta por um polímero condutor, a poli(o-metoxianilina) (POMA) dopada com ácido tolueno sulfônico (TSA), e um polímero isolante, o poli(fluoreto de vinilideno-co-trifluoretileno) (P(VDF-TrFE)). A esta blenda é acrescentado um material EL inorgânico, o silicato de zinco dopado com Manganês (Zn2SiO4:Mn), formando assim, o compósito híbrido. O dispositivo foi construído depositando o compósito por drop casting sobre um substrato de óxido de estanho dopado com flúor (FTO) e após cristalização em uma estufa foi depositado um eletrodo de metal por evaporação à vácuo formando uma estrutura tipo "sanduíche". Neste trabalho foram construídos dispositivos com eletrodo superior de Alumínio (Al) e Ouro (Au), denominados: FTO/CH/Al e FTO/CH/Au. O comportamento elétrico dos dispositivos de FTO/CH/Al foram analisados aplicando-se as teorias de Emissão Termoiônica, Emissão Schottky e Emissão Poole-Frenkel, o que tornou possível encontrar alguns parâmetros como: altura da barreira para a junção metal/CH, condutividade do CH e fator de retificação. O dispositivo de FTO/CH/Au foi caracterizado pela técnica de espectroscopia de impedância, sendo obtido também a altura da barreira para a junção metal/CH, a condutividade do CH, além da constante dielétrica do compósito e como variam esses dois últimos parâmetros com a temperatura. A aplicação das teorias de Emissão Termoiônica, Emissão Schottky e Emissão Poole-Frenkel produziram resultados semelhantes aos obtidos pela técnica de espectroscopia de impedância. Os espectros de luminescência apresentaram um pico em l = 528 nm com estabilidade temporal de emissão comparável a dos dispositivos inorgânicos puros. / Abstract: In this work was developed an electroluminescent (EL) device made up with a hybrid composite (CH), that is formed by a polymeric blend and an inorganic EL material. The conductive polymer, poly(o-methoxyaniline) (POMA) doped with p-Toluene sulphonic acid (TSA), and an isolating polymer, the poly(vinylidenefluoride-co-trifluoroethylene) (P(VDFTrFE)), was used to make the polymer blend. An inorganic EL material, the zinc silicate manganese-doped (Zn2SiO4:Mn), was added to the blend, forming the hybrid composite. The composite was deposited by drop-casting over a Fluoride Tin Oxide substrate (FTO) and after the crystallization in an oven a metal electrode was deposited by vacuum evaporation, forming a type "sandwich" structure. In this work were constructed different devices. Aluminum (Al) and Gold (Au) were used as upper electrodes, therefore the device structures were: FTO/CH/Al and FTO/CH/Au. To analyze the electrical behavior of the FTO/CH/Al device was applied the theories of Thermionic Emission, Schottky Emission and Poole- Frenkel Emission. Using these theories was possible to obtain parameters such as; the barrier height from the metal/CH junction, CH conductivity and diode rectifier factor. The FTO/CH/Au device was characterized using the impedance spectroscopy technique. For this device was also possible to obtain the barrier height from the metal/CH junction, CH conductivity and CH dielectric constant. For the last two parameters the dependence with the temperature were also observed. The application of the theories of Thermionic Emission, Schottky Emission and Poole-Frenkel Emission produced similar results to that obtained by the impedance spectroscopy technique. The luminescence spectra, for the devices, showed a peak at l = 528 nm with emission stability in time that it is comparable of pure inorganic devices. / Mestre

Células eletroquímicas poliméricas emissoras de luz, PLECs, são dispositivos eletrônicos orgânicos que vêm despertando muito interesse comercial por operarem sob baixa tensão com alto desempenho e sem a necessidade de eletrodos específicos, como o óxido de estanho e índio (ITO), cálcio entre outros. Esta característica confere a possibilidade de processamento de baixo custo e de obter dispositivos flexíveis. Nas PLECs a injeção de portadores eletrônicos de carga nas interfaces, entre a camada ativa do dispositivo e seus eletrodos, é facilitada por ação de espécies iônicas, que são inseridas no material polimérico por adição de um sal. Do ponto de vista científico, o interesse atual reside na completa compreensão dos fenômenos de transporte de portadores eletrônicos no interior do dispositivo. Hoje existem dois modelos concorrentes. Um considera o transporte eletrônico por difusão e o outro leva em consideração a dopagem eletroquímica e a consequente formação de uma junção PIN (semicondutor dopado tipo-p camada isolante semicondutor dopado tipo-n). Nesse contexto, propusemos a fabricação e caracterização elétrica de PLECs com diversas composições e espessuras a fim de confrontar os resultados experimentais com os modelos em questão. Demonstramos a existência de uma concentração crítica de sal, abaixo da qual a operação da PLEC é promovida predominantemente por injeção auxiliada pela formação de duplas-camadas devido ao movimento iônico. No regime de tensões mais elevadas, além da injeção, ocorre a dopagem tipo-p e tipo-n e a formação da junção PIN. Além disso, determinamos que para tensões superiores à de operação o dispositivo apresenta comportamento ôhmico, com resistência elétrica proporcional à espessura do dispositivo e praticamente independente da temperatura. Nossos resultados mostraram que no regime de tensões mais baixas deve ocorrer um processo de transporte por difusão, mas à medida que a tensão aumenta, inicia-se um processo de dopagem tipo-p de um lado e tipo-n de outro, aumentando a condutividade das regiões dopadas e finalizando com a formação de uma junção PIN. Mostramos também que a tensão acumulada nas duplas-camadas independe do tipo de polímero eletrônico, e que a tensão de operação, aquela na qual o polímero luminesce, é semelhante á do gap da banda proibida do polímero luminescente. / Polymer light emitting electrochemical cells, PLECs, are organic electronic devices that have attracted commercial interest because they operate at low voltage and exhibit high performance without the need of specific electrodes such as indium tin oxide (ITO), calcium and others. This feature provides low cost of fabrication and exible devices. The charge injection in the PLECs is facilitated by the action of ionic species, which are inserted in the polymeric material by adding a salt. This thesis treats with a controversy related to transport phenomena along the bulk of the device. Currently, there is two opposite models. One that considers that transport is driven by diffusion mechanism; and the other takes into account the formation of a PIN junction (p-type semiconductor insulating layer n-type semiconductor). Here, we proposed the fabrication and characterization of PLECs having different compositions and thickness, and the results were faced up to the models. We showed the existence of critical concentration of salt, below of which the operation of the PLECs are mainly due to injection stimulated by the ionic double-layer. For higher applied voltages, the injection still exists but it is followed by a PIN junction formation. We also verified that for voltages above the turn-on the device electrical resistance is proportional to the sample thickness and is practically temperature-independent. Our results showed that for low voltages the transport is dominated by diffusion, but as the voltage increases, the semiconducting layer starts to be doped: p-type in one side, and n-type in the other. Therefore, the conductivity of the semiconducting layer increases, and it finalizes by the formation of the PIN junction. Finally, we showed that the double-layer characteristic does not depend on the electronic polymer, and that the value of the turn-on voltage is very close to that of the electronic gap of the forbidden band.

Células eletroquímicas poliméricas emissoras de luz, PLECs, são dispositivos eletrônicos orgânicos que vêm despertando muito interesse comercial por operarem sob baixa tensão com alto desempenho e sem a necessidade de eletrodos específicos, como o óxido de estanho e índio (ITO), cálcio entre outros. Esta característica confere a possibilidade de processamento de baixo custo e de obter dispositivos flexíveis. Nas PLECs a injeção de portadores eletrônicos de carga nas interfaces, entre a camada ativa do dispositivo e seus eletrodos, é facilitada por ação de espécies iônicas, que são inseridas no material polimérico por adição de um sal. Do ponto de vista científico, o interesse atual reside na completa compreensão dos fenômenos de transporte de portadores eletrônicos no interior do dispositivo. Hoje existem dois modelos concorrentes. Um considera o transporte eletrônico por difusão e o outro leva em consideração a dopagem eletroquímica e a consequente formação de uma junção PIN (semicondutor dopado tipo-p camada isolante semicondutor dopado tipo-n). Nesse contexto, propusemos a fabricação e caracterização elétrica de PLECs com diversas composições e espessuras a fim de confrontar os resultados experimentais com os modelos em questão. Demonstramos a existência de uma concentração crítica de sal, abaixo da qual a operação da PLEC é promovida predominantemente por injeção auxiliada pela formação de duplas-camadas devido ao movimento iônico. No regime de tensões mais elevadas, além da injeção, ocorre a dopagem tipo-p e tipo-n e a formação da junção PIN. Além disso, determinamos que para tensões superiores à de operação o dispositivo apresenta comportamento ôhmico, com resistência elétrica proporcional à espessura do dispositivo e praticamente independente da temperatura. Nossos resultados mostraram que no regime de tensões mais baixas deve ocorrer um processo de transporte por difusão, mas à medida que a tensão aumenta, inicia-se um processo de dopagem tipo-p de um lado e tipo-n de outro, aumentando a condutividade das regiões dopadas e finalizando com a formação de uma junção PIN. Mostramos também que a tensão acumulada nas duplas-camadas independe do tipo de polímero eletrônico, e que a tensão de operação, aquela na qual o polímero luminesce, é semelhante á do gap da banda proibida do polímero luminescente. / Polymer light emitting electrochemical cells, PLECs, are organic electronic devices that have attracted commercial interest because they operate at low voltage and exhibit high performance without the need of specific electrodes such as indium tin oxide (ITO), calcium and others. This feature provides low cost of fabrication and exible devices. The charge injection in the PLECs is facilitated by the action of ionic species, which are inserted in the polymeric material by adding a salt. This thesis treats with a controversy related to transport phenomena along the bulk of the device. Currently, there is two opposite models. One that considers that transport is driven by diffusion mechanism; and the other takes into account the formation of a PIN junction (p-type semiconductor insulating layer n-type semiconductor). Here, we proposed the fabrication and characterization of PLECs having different compositions and thickness, and the results were faced up to the models. We showed the existence of critical concentration of salt, below of which the operation of the PLECs are mainly due to injection stimulated by the ionic double-layer. For higher applied voltages, the injection still exists but it is followed by a PIN junction formation. We also verified that for voltages above the turn-on the device electrical resistance is proportional to the sample thickness and is practically temperature-independent. Our results showed that for low voltages the transport is dominated by diffusion, but as the voltage increases, the semiconducting layer starts to be doped: p-type in one side, and n-type in the other. Therefore, the conductivity of the semiconducting layer increases, and it finalizes by the formation of the PIN junction. Finally, we showed that the double-layer characteristic does not depend on the electronic polymer, and that the value of the turn-on voltage is very close to that of the electronic gap of the forbidden band.