Ce manuscrit se focalise sur l’effet de divers matériaux composites sur les différentes problématiques de compatibilité électromagnétique dans un véhicule automobile. Les modèles surfaciques des matériaux diélectriques sont validés en confrontant des résultats de mesures et de simulation de leurs permittivités. Ceux des matériaux conducteurs le sont en confrontant le modèle d’impédance de surface à un modèle filaire et en effectuant des mesures des simulations de paramètres S sur une structure majoritairement constituée par un matériau de ce type. Dans les deux cas, la technique de modélisation donne de bons résultats. L’évaluation de l’effet de ces matériaux sur les problématiques de CEM au niveau d’un véhicule est faite sur un démonstrateur qui intègre les équipements et les faisceaux embarqués dans un véhicule en les représentants par des monopôles et des fils conducteurs. L’évaluation des effets des différents matériaux composites sur les problématiques CEM est faite par mesure et simulation des couplages électromagnétiques à l’intérieur du démonstrateur et entre le démonstrateur et une antenne test. L’analyse des couplages électromagnétiques confirme que le modèle d’impédance de surface reproduit assez bien les comportements des matériaux composites étudiés. Concernant l’effet des matériaux composites sur les problématiques CEM au niveau d’un véhicule, cette étude mène à deux résultats majeurs du point de vue de la compatibilité électromagnétique. Le premier concerne l’usage des matériaux diélectriques qui augmente globalement la plupart des couplages mesurés de 5 dB à 30 dB. Le second porte sur le matériau conducteur étudié qui n’a quasiment aucun effet sur les différents couplages analysés en comparaison de la structure en acier. / The main concern of this thesis is the characterization of the impacts of some composite materials on the main electromagnetic compatibility issues in a vehicle. The surface models of the dielectric materials are validated by confronting their simulated and measured permittivity. The surface model of the studied conductive material is validated by confronting it to a wire model and by measuring and simulating the S parameters on a structure constituted by such a material. It appears in both cases of dielectric and conductive composite materials that the surface impedance modeling technique gives a good description of the materials. The analysis of the effects of these materials on the EMC issues within a vehicle is done by use of a demonstrator representing the car body. The different equipment and harnesses embedded in a vehicle are represented in the demonstrator by some wires and monopoles. The evaluation of the impact of the composite materials on the EMC issues is done by measuring and simulating the different couplings within the demonstrator and between the demonstrator and a test antenna. The analysis of the different couplings confirms that the surface impedance material modeling approach describes well the materials under test. Concerning the impact of the composite materials on the EMC issues at a vehicle level, this analysis fulfills two main results. The first one concerns the dielectric materials. Indeed the use of these materials increases the different coupling by a value varying between at least 5 dB to 30 dB. The second conclusion concerns the use of conductive composite materials. It appears that they have no effect on the different couplings in comparison to the full steel structure.

Chalcogenide glasses have attracted considerable attention due to their infrared transparency, low phonon energy, and high non linear optical properties. They have been explored as promising candidate for optical memories, gratings, switching devices etc. Because of their low phonon energy and high refractive indices, now a days these are used for high efficiency fibre amplifiers. Nevertheless, the availability of amorphous semiconductors in the form of high quality multilayers provides potential applications in the field of micro and optoelectronics. Among amorphous multilayers, chalcogenide multilayers are attractive because of the prominent photoinduced effects. Studies in chalcogenide amorphous multilayer have been directed towards two phenomena. One is photoinduced interdiffusion in short period multilayer systems which finds potential applications in holographic recording and fabrication of phase gratings . The other is photo darkening or photobleaching which is also known in thick films. These multilayers exhibit prominent photoinduced effects, similar to those exhibited by uniform thin films. In spite of its practical usefulness, the mechanism of photoinduced interdiffusion is not properly understood. Since most structural transformations are related to atomic diffusion, understanding of the structural transformation must be based on the diffusion process. The main aim of this thesis is to study the photoinduced diffusion in Sb/As2S3 multilayered films and (As2S3)1-xSbx thin films. In literature, there are reports about the photoinduced interdiffusion in Se/As2S3 and Bi/As2S3 multilayered films, but the mechanisms of photoinduced interdiffusion of these elements are not very clear. Raman scattering and infrared spectroscopy techniques have been used to study the photoinduced interdiffusion in Se/As2S3 and Bi/As2S3 multilayered films by Malyovanik et al. (M. Malyovanik, M. Shiplyak, V. Cheresnya, T. Remeta, S. Ivan, and A. Kikineshi, J. Optoelectron. Adv. Mater. 5, 397 (2003). But many questions remain unanswered. The characteristic spectra of components in the multilayer and those of the diffused layer were rather similar. In the present thesis, photoinduced interdiffusion in Sb/As2S3 multilayered samples are studied by Fourier Transform Infrared spectroscopy (FTIR) at room and low temperature and X-ray photoelectron spectroscopy (XPS). The photoinduced effects in (As2S3)1-xSbx thin films are studied by FTIR, XPS and Raman Spectroscopy. The detailed information about the distribution of electronic states in the absorption edge, localized states and the new bonds formed between the components due to photoinduced interdiffusion elucidated from the above studies will give more insight into the mechanism and kinetics of photoinduced interdiffusion. The thesis consists of seven chapters. References are given at the end of each chapter.

Au cours des dernières décennies, les piles à combustible à oxyde solide sont devenues un dispositif prometteur de conversion d’énergie. Ceci est dû principalement à leur efficacité de conversion d’énergie, leur flexibilité du choix du carburant et leurs faibles émissions de polluants. Cependant, la température de fonctionnement élevée de cette variante de piles à combustible induit divers problèmes d’endommagement et de fissuration. Par conséquent, l’optimisation de leur durée de vie reste un problème à résoudre. Dans cette thèse, une approche numérique combinant la méthode des éléments finis (FEM) et la méthode des éléments finis étendus (XFEM) est développée. Le but est de modéliser le problème multi-physique comportant: l’écoulement du fluide, le transfert de la chaleur, le transfert de masse, les réactions électrochimiques et thermomécanique dans une unité de pile à combustible. Dans un premier temps, pour prédire la distribution de la température et des espèces dans le milieu poreux des électrodes, un modèle de Darcy-Brinkman (DB) couplant l’écoulement du gaz, le transfert de chaleur et le transport de masse est développé. Ensuite, la méthode XFEM est introduite pour modéliser la présence des fissures dans les électrodes. Le modèle DB-XFEM combiné est utilisé par la suite pour étudier l’effet de l’écoulement du fluide, le transfert de chaleur et des propriétés thermomécaniques du matériau sur la nucléation et la propagation des fissures. Enfin, un modèle électrochimique (EC) est développé et combiné avec le modèle DB pour étudier les performances de conversion d’énergie dans la cellule de la pile à combustible. / Over the last few decades, Solid Oxide Fuel Cell (SOFC) has been a promising energy conversion device that has drawn a lot of attention due to its high energy conversion efficiency, fuel flexibility and low pollutant emission. However, as the high operating temperature leads to complex material problems in the SOFC, the energy conversion efficiency and life expectancy optimization remain as the challenging issues regarding the design and manufacturing of fuel cells. In this thesis, a numerical approach based on a combination of Finite Element (FEM) and eXtended Finite Element (XFEM) methods is developed to model the coupled fluid flow, heat and mass transfer as well as the electrochemical reactions with thermo-mechanical process in the SOFC unit. At first, to predict the temperature and species distribution within the porous electrodes of a SOFC unit, a Darcy-Brinkman (DB) model coupling the gas flow, heat and mass transport in porous media is developed. Then, the XFEM is introduced to deal with the presence of crack in the porous electrodes. The combined DB-XFEM model is used to investigate the effect of fluid flow, heat transfer, porous material properties and the material anisotropy on the onset of crack growth and the propagation path in the SOFC unit. At last, an electrochemistry (EC) model is developed and combined with the DB model to couple the electrochemical reactions to energy and mass transfer in the SOFC. With the DB-EC model, the cell energy conversion performances are studied.

In the last 10-15 years there has been a renewed interest in amorphous Se (a-Se) and its alloys due to their application as photoconductor materials in the new fully digital direct conversion flat panel x-ray medical image detectors. For a number of reasons, the a-Se photoconductor layer in such x-ray detectors has to be operated at very high electric fields (up to 10 Volts per micron) and one of the most difficult problems related to such applications of a Se is the problem of the dark current (the current in the absence of any radiation) minimization in the photoconductor layer. <p>This PhD work has been devoted to researching the possibilities for dark current minimization in a-Se x-ray photoconductors devices through a systematic study of the charge transport (carrier mobility and carrier lifetimes) and dark currents in single and multilayered a-Se devices as a function of alloying, doping, deposition condition and other fabrication factors. The results of the studies are extensively discussed in the thesis. We have proposed a new technological method for dark current reduction in single and multilayered a-Se based photoconductor for x-ray detector applications. The new technology is based on original experimental findings which demonstrate that both hole transport and the dark currents in a-Se films are a very strong function of the substrate temperature (Tsubstrate) during the film deposition process. We have shown that the new technique reduces the dark currents to approximately the same levels as achievable with the previously existing methods for dark current reduction. However, the new method is simpler to implement, and offers some potential advantages, especially in cases when a very high image resolution (20 cycles/mm) and/or fast pixel readout (more than 30 times per second) are needed. <p>Using the new technology we have fabricated simple single and double (ni-like) photoconductor layers on prototype x-ray image detectors with CCD (Charge Coupled Device) readout circuits. Dark currents in the a-Se photoconductor layer were not a problem for detector operation at all tested electric fields. Compared to the currently available commercial systems for mammography, the prototype detectors have demonstrated an excellent imaging performance, in particular superior spatial resolution (20 cycles/mm). Thus, the newly proposed technology for dark current reduction has shown a potential for commercialization.

In the last 10-15 years there has been a renewed interest in amorphous Se (a-Se) and its alloys due to their application as photoconductor materials in the new fully digital direct conversion flat panel x-ray medical image detectors. For a number of reasons, the a-Se photoconductor layer in such x-ray detectors has to be operated at very high electric fields (up to 10 Volts per micron) and one of the most difficult problems related to such applications of a Se is the problem of the dark current (the current in the absence of any radiation) minimization in the photoconductor layer. <p>This PhD work has been devoted to researching the possibilities for dark current minimization in a-Se x-ray photoconductors devices through a systematic study of the charge transport (carrier mobility and carrier lifetimes) and dark currents in single and multilayered a-Se devices as a function of alloying, doping, deposition condition and other fabrication factors. The results of the studies are extensively discussed in the thesis. We have proposed a new technological method for dark current reduction in single and multilayered a-Se based photoconductor for x-ray detector applications. The new technology is based on original experimental findings which demonstrate that both hole transport and the dark currents in a-Se films are a very strong function of the substrate temperature (Tsubstrate) during the film deposition process. We have shown that the new technique reduces the dark currents to approximately the same levels as achievable with the previously existing methods for dark current reduction. However, the new method is simpler to implement, and offers some potential advantages, especially in cases when a very high image resolution (20 cycles/mm) and/or fast pixel readout (more than 30 times per second) are needed. <p>Using the new technology we have fabricated simple single and double (ni-like) photoconductor layers on prototype x-ray image detectors with CCD (Charge Coupled Device) readout circuits. Dark currents in the a-Se photoconductor layer were not a problem for detector operation at all tested electric fields. Compared to the currently available commercial systems for mammography, the prototype detectors have demonstrated an excellent imaging performance, in particular superior spatial resolution (20 cycles/mm). Thus, the newly proposed technology for dark current reduction has shown a potential for commercialization.