"1998"--T.p. / Thesis (PhD)--Macquarie University, School of Mathematics, Physics, Computing and Electronics, 1999. / Includes bibliographical references. / Introduction -- A Michelson interferometer for measurement of piezoelectric coefficients -- The piezoelectric coefficient of gallium arsenide -- Extensional piezoelectric coefficients of gallium nitrides and aluminium nitride -- Shear piezoelectric coefficients of gallium nitride and aluminium nitride -- Electrostriction in gallium nitride, aluminium nitride and gallium arsenide -- Summary and prognosis. / The present work represents the first use of the interferometric technique for determining the magnitude and sign of the piezoelectric coefficients of III-V compound semiconductors, in particular gallium arsenide (GaAs), gallium nitride (GaN), and aluminium nitride (AIN). The interferometer arrangement used in the present work was a Michelson interferometer, with the capability of achieving a resolution of 10⁻¹³ m. -- The samples used were of two types. The first were commercial wafers, with single crystal orientation. Both GaAs and GaN were obtained in this form. The second type of sample was polycrystalline thin films, grown in the semiconductor research laboratories at Macquarie University. GaN and AIN samples of this type were obtained. -- The d₁₄ coefficient of GaAs was measured by first measuring the d₃₃ value of a [111] oriented sample. This was then transformed to give the d₁₄ coefficient of the usual [001] oriented crystal. The value obtained for d₁₄ was (-2.7 ± 0.1) pmV⁻¹. This compares well with the most recent reported measurements of -2.69 pmV⁻¹. The significance of the measurement is that this represents the first time this coefficient has been measured using the inverse piezoelectric effect. -- For AIN and GaN samples, the present work also represents the first time their piezoelectric coefficients have been measured by interferometry. For GaN, this work presents the first reported measurements of the piezoelectric coefficients, and some of these results have recently been published by the (Muensit and Guy, 1998). The d₃₃ and d₃₁ coefficients for GaN were found to be (3.4 ± 0.1) pmV⁻¹ and (-1.7 ± 0.1) pmV⁻¹ respectively. Since these values were measured on a single crystal wafer and have been corrected for substrate clamping, the values should be a good measure of the true piezoelectric coefficients for bulk GaN. -- For AIN, the d₃₃ and d₃₁ coefficients were found to be (5.1 ± 0.2) pmV⁻¹, and (-2.6 ± 0.1) pmV⁻¹ respectively. Since these figures are measured on a polycrystalline sample it is quite probable that the values for bulk AIN would be somewhat higher. / The piezoelectric measurements indicate that the positive c axis in the nitride films points away from the substrate. The piezoelectric measurements provide a simple means for identifying the positive c axis direction. -- The interferometric technique has also been used to measure the shear piezoelectric coefficient d₁₅ for AIN and GaN. This work represents the first application of this technique to measure this particular coefficient. The d₁₅ coefficients for AIN and GaN were found to be (-3.6 ± 0.1) pmV⁻¹ and (-3.1 ± 0.1) pmV⁻¹ respectively. The value for AIN agrees reasonably well with the only reported value available in the literature of -4.08 pmV⁻¹. The value of this coefficient for GaN has not been measured. -- Some initial investigations into the phenomenon of electrostriction in the compound semiconductors were also performed. It appears that these materials have both a piezoelectric response and a significant electrostrictive response. For the polycrystalline GaN and AIN, the values of the M₃₃ coefficients are of the order of 10⁻¹⁸ m²V⁻². The commercial single crystal GaN and GaAs wafers display an asymmetric response which cannot be explained. / Mode of access: World Wide Web. / Various pagings ill

Thesis (Ph. D.)--University of Alabama at Birmingham, 2008. / Additional advisors: Yogesh K. Vohra, Xu Feng, Jack E. Lemons, Timothy M. Wick. Description based on contents viewed July 8, 2009; title from PDF t.p. Includes bibliographical references.

Thesis (M.App.Sc.) - Carleton University, 2007. / Includes bibliographical references (p. 73-76). Also available in electronic format on the Internet.

Thesis (Ph. D.)--Ohio State University, 2006. / Title from first page of PDF file. Includes bibliographical references (p. 209-217).

Submitted by Johnny Rodrigues (johnnyrodrigues@ufcg.edu.br) on 2018-04-12T21:33:19Z No. of bitstreams: 1 LEOPOLDO VIANA BATISTA NETO - DISSERTAÇÃO PPG-CEMat 2014..pdf: 2575700 bytes, checksum: a10f0685285492d2302637ed070d9631 (MD5) / Made available in DSpace on 2018-04-12T21:33:19Z (GMT). No. of bitstreams: 1 LEOPOLDO VIANA BATISTA NETO - DISSERTAÇÃO PPG-CEMat 2014..pdf: 2575700 bytes, checksum: a10f0685285492d2302637ed070d9631 (MD5) Previous issue date: 2014-08-28 / Filmes finos de Nitreto de titânio (TiN) e Nitreto de titânio-zircônio (TiZrN) foram depositados sobre substratos de aço inoxidável 316 usando o método de Sputtering RF para deposição dos filmes. O planejamento de experimentos (DOE) tem sido reconhecido como um método poderoso para otimizar um processo complexo na indústria. Os efeitos do presente estudo foram verificar a viabilidade e confiabilidade da aplicação do método DOE em processos de Sputtering RF, otimizar os parâmetros de processamento para o processo de deposição, identificando os parâmetros sensíveis que afetam a espessura da camada depositada (E.C.D) e a resistência à corrosão (Ecorr.). Para o método de Sputtering RF, dois parâmetros, a taxa e tempo de deposição foram escolhidos para serem os parâmetros do processo. Depois da deposição, a estrutura de camada depositada foi caracterizada por Difração de Raios X (DRX) e por Microscopia Eletrônica de Varredura (MEV). Após o ensaio de polarização, a corrosão foi realizada a fim de investigar a relação entre o início da corrosão e a espessura da camada depositada. A análise de variância (ANOVA) foi realizada para avaliar os parâmetros sensíveis e prever as condições ideais. Com base na análise estatística, os parâmetros mais sensíveis no processo de Sputtering RF foram tanto a taxa como o tempo de deposição do filme fino. As melhores condições de deposição foram a taxa de deposição máxima e tempo máximo. / Titanium nitride (TiN) and titanium-zirconium nitride (TiZrN) thin films were deposited on ASTM F 138 stainless steel substrates using de Sputtering RF methods. Design of experiment (DOE) has long been recognized as a powerful method to optimize a complex process in industry. The purposes of present study were to verify the feasibility and reliability of the application of DOE method on de Sputtering RF processes and optimize the processing parameters for the deposition process, in which the sensitive parameters that affected the film properties were also identified. For de Sputtering RF method, two parameters, deposition rate and time were chosen to be the operating parameters. After deposition, the thin film structure was characterized by X-ray diffraction (XRD), and high-resolution scanning electron microscopy (SEM). After the polarization test, the corrosion analysis was carried out in order to investigate the relationship between the corrosion initiation and the thickness of the deposited layer. The analysis of variance (ANOVA) was conducted to assess the sensitive parameters and predict the optimum conditions. Based on the statistical analysis, the most sensitive parameters in de Sputtering RF process were both the deposition rate and time. The optimum deposition conditions in each system were maximum deposition rate and time.

Nous avons synthétisé différentes dyades donneurs-accepteurs (D-A) π-conjuguées à base de fullerène pour des applications photovoltaïques dans lesquelles les unités D étaient soit des oligophenylenevinylenes (OPV) soit des oligophenyleneethynylene (OPE) et les unités A étaient le C60 ou un endofullerène du type Y3N@C80. Il y avait une exigence supplémentaire pour nos matériaux, à savoir qu’ils devaient s’auto-organiser en phases liquides-cristallines. Pour ce faire, toutes les unités D contenaient un promoteur mésogène afin d'induire le mésomorphisme de la dyade D- et donc de contrôler la morphologie des couches minces nécessaires à l’élaboraiton des cellules photovoltaïques grâce à une organisation supramoléculaire. En dehors de cela, nous avons étudié l’influence de la nature chimique du donneur (par exemple lyophile ou amphiphile), de la longueur des oligomères et de la multiaddition sur les propriétés photophysiques et sur l'auto-assemblage. Nous avons synthétisé une dyade OPE-Y3N@C80 qui est le premier dérive mésomorphe et photosensible de ce type de métallofullerène endohédral. / We have synthesized different π-conjugated system-fullerene dyads for photovoltaic applications, where the donor units were either oligophenylenevinylene (OPV) or oligophenyleneethynylene (OPE) derivatives and for the acceptor, C60 or Y3N@C80 was used. There was an additional requirement for our materials: liquid crystallinity. All the donor units contained a mesogenic promoter in order to induce mesomorphism in the D-A dyad and to control the morphology of the prepared film through supramolecular organization. Apart from that, we investigated the effect of the chemical nature of the donor moiety (ie. lyophilic or amphiphilic), the oligomeric length and multiaddition on the photophysical properties and on the self-assembly. We have synthesized an OPE-Y3N@C80 dyad which is the first trimetallic nitride template endohedral metallofullerene derivative with mesomorphic and photoactive properties.

No description available.

III-nitridy běžně krystalizují v hexagonální (wurtzitové) struktuře, zatímco kubická (sfaleritová) struktura je metastabilní a má pouze mírně vyšší energii. Jejich fyzikální vlastnosti jsou silně ovlivněny přítomností rozsáhlých defektů, které jsou v těchto dvou strukturách od sebe odlišné. U wurtzitových nitridů se jedná primárně o vláknové dislokace. Některé vláknové dislokace tvoří hluboké energetické stavy v zakázaném pásu, kterými ovlivňují elektrické a optoelektronické vlastnosti těchto materiálů. Oproti tomu, kubické nitridy obsahují množství vrstevných chyb, které představují lokální transformace do stabilnější wurtzitové struktury. Cílem této práce je charakterizovat rozsáhlé defekty v obou krystalových strukturách pomocí elektronové mikroskopie, mikroskopie atomárních sil a rentgenové difrakce. Prokázali jsme, že vzorky GaN/AlN a AlN s orientací (0001) rostlé na substrátu Si (111) pomocí epitaxe z organokovových sloučenin obsahují velkou hustotu vláknových dislokací. Nejčastější jsou dislokace s Burgersovým vektorem s komponentou ve směru a wurtzitové struktury, následované dislokacemi s Burgersovým vektorem s komponentou ve směru a+c, zatímco dislokace s Burgersovým vektorem s c komponentou jsou relativně vzácné. Pravděpodobný původ vláknových dislokací je diskutován v souvislosti s různými mechanismy růstu těchto vrstev. Prizmatické vrstevné chyby byly nalezeny v tenkých nukleačních vrstvách AlN, ale v tlustších vrstvách již nebyly přítomny. Na rozhraní AlN / Si byla nalezena amorfní vrstva složená ze SiNx a částečně taky z AlN. Navrhujeme, že by tato amorfní vrstva mohla hrát významnou roli při relaxaci misfitového napětí. Analýza elektrické aktivity rozsáhlých defektů v AlN byla provedena pomocí měření proudu indukovaného elektronovým svazkem. Zjistili jsme, že vláknové dislokace způsobují slabý pokles indukovaného proudu. Díky jejich vysoké hustotě a rovnoměrnému rozložení však mají větší vliv na elektrické vlastnosti, než mají V-defekty a jejich shluky. Topografické a krystalografické defekty byly studovány na nežíhaných a žíhaných nukleačních vrstvách kubického GaN deponovaných na 3C-SiC (001) / Si (001) substrátu. Velikost ostrůvků na nežíhaných vzorcích se zvyšuje s tloušťkou nukleační vrstvy a po žíhání se dále zvětšuje. Po žíhání se snižuje pokrytí substrátu u nejtenčích nukleačních vrstev v důsledku difúze a desorpce (nebo leptání atmosférou reaktoru). Vrstevné chyby nalezené ve vrstvách GaN, poblíž rozhraní se SiC, byly většinou identifikovány jako intrinsické a byly ohraničené Shockleyho parciálními dislokacemi. Jejich původ byl diskutován, jako i vliv parciálních dislokací na relaxaci misfitového napětí. Díky velkému množství vrstevných chyb byly podrobněji studovány jejich interakce. Na základě našich zjištění jsme vyvinuli teoretický model popisující anihilaci vrstevných chyb v kubických vrstvách GaN. Tento model dokáže předpovědět pokles hustoty vrstevných chyb se zvyšující se tloušťkou vrstvy.

Die Existenz metallreicher Perowskite der Zusammensetzung (SE3X)M (X = O, N; SE = La, Ce, Pr, Nd, Sm, Gd, Tb, Dy, Er, Ho, Tm, Lu; M = Al, Ga, In, Sn) wurde untersucht. Die Charakterisierung der Proben erfolgte mit Röntgenpulverdiffraktometrie und Elementaranalysen (O und N). Oxide (SE3O)Al mit SE = La, Ce, Pr, Nd und Sm und (SE3O)In mit SE = Ce, Pr und Nd wurden erhalten. Die Reihe der Verbindungen (SE3N)Al (SE = La, Ce, Pr, Nd, Sm) wurde um die Seltenerd-Metalle SE = Gd, Tb, Dy, Ho, Er und Tm erweitert. Die metallreichen Perowskite (SE3N)Sn (SE = La, Ce, Pr, Sm) und (SE3N)Ga (SE = Ce, Pr, Sm, Gd, Tb) wurden erstmals beschrieben. Die thermische Stabilität (DSC) der Phasen (SE3X)M ist für die Nitride allgemein am höchsten. Nitride von Al und Ga zersetzen zwischen 1000 °C und 1200 °C, Stannide bleiben bis 1250 °C thermisch stabil. Messungen der magnetischen Suszeptibilität und der LIII-Absorbtionskanten sind in Einklang mit einer Elektronenkonfiguration SE3+. Die gemessenen elektrischen Widerstände sind charakteristisch für schlechte metallische Leiter. Verschiedene Gehaltschnitte SE3Al-(SE3X)Al und SE3In-(SE3X)In wurden mit Röntgenpulverdiffraktometrie und DTA untersucht. Die Oxide und Nitride (SE3X1-y)M (SE = La, Ce; X = N, O) weisen nur geringe Phasenbreiten auf. Die Carbide (Ce3C1-y)In zeigen hingegen signifikante Phasenbreiten. In den Systemen EA-In-N wurden röntgenografisch phasenreine Pulver von (Ca4N)[In]2 und (EA19N7)[In4]2 (EA = Ca, Sr) erhalten. Durch Elementaranalysen auf H, C, N, O, EA und In und Neutronenbeugung am Pulver können alternative Zusammensetzungen mit einer ausgeglichenen Ladungsbilanz im Sinne des Zintl-Konzepts für diese Phasen ausgeschlossen werden. Im System La-Al wurde die neue Phase La16Al13 beobachtet und an Einkristallen sowie an Pulvern charakterisiert. Das in der Literatur im Cu3Au-Strukturtyp beschrieben kubische Polymorph von Ce3Al wurde auf einen ternären metallreichen Perowskit (Ce3X)Al zurückgeführt.

<p> Optical metamaterials have triggered extensive studies driven by their fascinating electromagnetic properties that are not observed in natural materials. Aside from the extraordinary progress, challenges remain in scalable processing and material performance which limit the adoption of metamaterial towards practical applications. The goal of this dissertation is to design and fabricate nanocomposite thin films by combining nitrides with a tunable secondary phase to realize controllable multi-functionalities towards potential device applications. Transition metal nitrides are selected for this study due to the inherit material durability and low-loss plasmonic properties that offer stable two-phase hybridization for potential high temperature optical applications. Using a pulsed laser deposition technique, the nitride-metal nanocomposites are self-assembled into various geometries including pillar-in-matrix, embedded nanoinclusions or complex multilayers, that possess large surface coverage, high epitaxial quality, and sharp phase boundary. The nanostructures can be further engineered upon precise control of growth parameters. </p><p> This dissertation is composed of a general review of related background and experimental approaches, followed by four chapters of detailed research chapters. The first two research chapters involve hybrid metal (Au, Ag) - titanium nitride (TiN) nanocomposite thin films where the metal phase is self-assembled into sub-20 nm nanopillars and further tailored in terms of packing density and tilting angles. The tuning of plasmonic resonance and dielectric constant have been achieved by changing the concentration of Au nanopillars, or the tuning of optical anisotropy and angular selectivity by changing the tilting angle of Ag nanopillars. Towards applications, the protruded Au nanopillars are demonstrated to be highly functional for chemical bonding detection or surface enhanced sensing, whereas the embedded Ag nanopillars exhibit enhanced thermal and mechanical stabilities that are promising for high temperature plasmonic applications. In the last two chapters, dissimilar materials candidates beyond plasmonics have been incorporated to extend the electromagnetic properties, include coupling metal nanoinclusions into a wide bandgap semiconducting aluminum nitride matrix, as well as inserting a dielectric spacer between the hybrid plasmonic claddings for geometrical tuning and electric field enhancement. As a summary, these studies present approaches in addressing material and fabrication challenges in the field of plasmonic metamaterials from fundamental materials perspective. As demonstrated in the following chapters, these hybrid plasmonic nanocomposites provide multiple advantages towards tunable optical or biomedical sensing, high temperature plasmonics, controllable metadevices or nanophotonic chips.</p><div><br></div>