This diploma thesis deals with the creation of visualization for testing lab for air conditioning unit. This unit was made by Strojírenský zkušební ústav. The visualization was programmed in the visualization and simulation program called ControlWeb. This application allows controlling, monitoring, storing and retrieving all necessary variables. Next part of diploma thesis discusses techniques of measurement, automation devices and visualization software.

In the first part of this work, there is analysis of the industrial proprietary protocol S7 by Siemens. The analysis is performed by Wireshark between the programmable controller S7-1200 and Simatic NET OPC server. This protocol is based on other protocols whose proposals and solutions are completely or at least partially described in this work. On the basis of this information is created a communication library in C ++, which allows the transmission of variables. This library is subsequently used in the implementation of the communication server through which one can easily access variables in the programmable machine with a text protocol.

The goal of this thesis is to develop SCADA/HMI system for stations on leak test. The software will be able to communicate with the station via the OCP server, by which the control station and store measured data. For this purpose, it was used more fiber processing, as for the actual communication, as well as to run the program and work with databases to store the results. The resulting program will be placed on the personal computer, which is part of the station to check for leaks.

This paper describes the development of a proof-of-concept application, which can be used to train people in the field of programmable logic controller (PLC) and robot programming. This concept leads to a better understanding, what kind of infrastructure and software packages can be combined, to not only have a visual representation of an industrial like scenario, but also the possibility to use commonly established programming environments such as TIA Portal, to set up a PLC program. In addi-tion, it provides insights on how OPC UA can be used and is suitable for controlling a typical six-axis industrial robot with the help of a PLC.

Optical Proximity Correction (OPC) is a part of a family of techniques called Resolution Enhancement Techniques (RET). These techniques are employed to increase the resolution of a lithography system and improve the quality of the printed pattern. The fidelity of the pattern is degraded due to the disparity between the wavelength of light used in optical lithography, and the required size of printed features. In order to improve the aerial image, the mask is modified. This process is called OPC, OPC is an iterative process where a mask shape is modified to decrease the disparity between the required and printed shapes. After each modification the chip is simulated again to quantify the effect of the change in the mask. Thus, lithography simulation is an integral part of OPC and a fast lithography simulator will definitely decrease the time required to perform OPC on an entire chip. A lithography simulator which uses wavelets to compute the aerial image has previously been developed. In this thesis I extensively modify this simulator in order to execute it on a Graphics Processing Unit (GPU). This leads to a lithography simulator that is considerably faster than other lithography simulators and when used in OPC will lead to drastically decreased runtimes. The other work presented in the proposal is a fast OPC tool which allows us to perform OPC on circuits faster than other tools. We further focus our attention on metrics like runtime, edge placement error and shot size and present schemes to improve these metrics.

Die Industrie ist im Wandel. Die Grenzen zwischen Industrien, Anwendungsbereichen und Unternehmen verschwinden immer weiter, sind teils kaum noch in ihrer alten Ausprägung zu erkennen. Auch die industrielle Automation kann und sollte sich diesem Trend nicht entziehen. Immer mehr Technologien und Paradigmen anderer Bereiche gewinnen an Bedeutung. Hinzu kommt, dass die Anzahl und die Vielfalt an Geräten, Anwendungen, Anforderungen und Technologien stetig wächst. Diese Arbeit befasst sich mit Ansätzen, die es ermöglichen, einigen Aspekten der wachsenden Komplexität zu begegnen. Dabei handelt es sich um Technologien und Konzepte zum Thema Management, genauer zum Netzwerk-, System- und Dienste-Management. Ziel ist es nicht nur einen Ansatz zu finden, der gegenwärtigen Ansprüchen genügt, sondern auch noch für kommende Entwicklungen geeignet ist.

The effects of metastable tetragonal zirconia on the properties of Ordinary Portland Cement were observed during which the effect of crystallite size pH on the preparation solution, precursor salt, and the presence of co-precipitates, Fe(OH)3, SnO2 and SiO2 on the crystallization temperature, enthalpy and crystal structure, immediately following the crystallization exothermic burst phenomenon in ZrO2 were measured. Thermal analysis and x-ray methods were used to determine crystallite sizes and structures immediately following the exothermic burst. Comparisons were made for zirconias prepared from oxychloride, chloride and nitrate solutions. The existence of tetrameric hydroxidecontaining ions in oxychloride precursor is used to rationalise low values of crystallization enthalpy. The position of the crystallization temperature, Tmax was not dependent on crystallite size alone but also on the pH at which the gel was made, the surface pH after washing, and the presence of diluent oxides. Enthalpy v r1/2 and Tmax v (diluent vol)1/3 relationships indicate that surface coverage effects dominate a surface nucleated phenomenon. The data established for ZrO2 systems was used to develop tetragonal-ZrO2-SnO2 powders capable of improving the mechanical properties of Ordinary Portland Cement discs. The ZrO2-OPC discs were prepared by powder mixing, water hydration and uniaxial pressing. Vicat needle tests showed that tetragonal-ZrO2 increases the initial setting rate. Microscopy indicated that porosity distribution changes near to ZrO2 particles. Zirconia has also been introduced into OPC discs by vacuum infiltration methods developed for solutions and colloidal suspensions. Comparisons between OPC discs and the OPCtetragonal ZrO2 composites have been made on the basis of diametral compression strength, Young’s modulus, hardness and toughness (K1c), as estimated by the cracked indentation method. Bell-shaped curves are found for the way the mechanical properties are changed as a function of Zirconia content.

A l’heure actuelle, la lithographie optique 193 nm arrive à ces limites de capacité en termes de résolution des motifs dans la fenêtre du procédé souhaitée pour les nœuds avancés. Des lithographies de nouvelle génération (NGL) sont à l’étude, comme la lithographie EUV (EUV). La complexité de mise en production de ces nouvelles lithographie entraine que la lithographie 193 nm continue à être exploitée pour les nœuds 28 nm et au-delà. Afin de suivre la miniaturisation le rôle des techniques alternatives comme le RET (en anglais Resolution Enhancement Technique) tels que l’OPC (Optical Proximity Correction) est devenu primordial et essentiel. Néanmoins, la complexité croissante de design et de la variabilité du procédé lithographique font qu’il est nécessaire de faire des compromis. Dans ce contexte de complexité croissante du procédé de fabrication, l’objectif de la thèse est de mettre en place une méthode de boucles de correction des facteurs de variabilité. Cela signifie une diminution de la variabilité des motifs complexes pour assurer une résolution suffisante dans la fenêtre de procédé. Ces motifs complexes sont très importants, car c’est eux qui peuvent diminuer la profondeur du champ commune (uDoF). Afin d'accomplir cette tâche, nous avons proposé et validé un enchainement qui pourra être plus tard implémenté en production. L’enchainement en question consiste en une méthodologie de détection basée sur la simulation des motifs les plus critiques étant impactés par les effets issus de la topographie du masque et du profil de la résine. En outre cette méthodologie consiste en une diminution et la compensation de ces effets, une fois que ces motifs les plus critiques sont détectés. Le résultat de l’enchaînement complété sont encourageants : une méthode qui détecte et diminue les variabilités du processus lithographique pour des nœuds de technologie de 28nm a été validée. En plus elle pourrait être adaptée pour les nœuds au-delà de 28 nm. / The currently used 193 nm optical lithography reaches its limits from resolution point of view. Itis despite of the fact that various techniques have been developed to push this limit as much aspossible. Indeed new generation lithography exists such as the EUV, but are not yet reliable to beapplied in mass production. Thus in orders to maintain a robust lithographic process for theseshrunk nodes, 28 nm and beyond, the optical lithography needs to be further explored. It ispossible through alternatives techniques: e.g. the RETs (Resolution Enhancement Techniques),such as OPC (Optical Proximity Correction) and the double patterning. In addition to theresolution limits, advanced technology nodes are dealing with increasing complexity of design andsteadily increasing process variability requiring more and more compromises.In the light of this increasing complexity, this dissertation work is addressed to mitigate thelithographic process variability by the implementation of a correction (mitigation) flow exploredmainly through the capability of computational lithography. Within this frame, our main objectiveis to participate to the challenge of assuring a good imaging quality for the process windowlimiting patterns with an acceptable gain in uDoF (usable Depth of Focus).In order to accomplish this task, we proposed and validated a flow that might be laterimplemented in the production. The proposed flow consists on simulation based detectionmethodology of the most critical patterns that are impacted by effects coming from the masktopography and the resist profile. Furthermore it consists of the mitigation and the compensationof these effects, once the critical patterns are detected. The obtained results on the completedflow are encouraging: a validated method that detects the critical patterns and then mitigates thelithographic process variability been developed successfully.

Les progrès réalisés dans la microélectronique répondent à la problématique de la réduction des coûts de production et celle de la recherche de nouveaux marchés. Ces progrès sont possibles notamment grâce à ceux effectués en lithographie optique par projection, le procédé lithographique principalement utilisé par les industriels. La miniaturisation des circuits intégrés n’a donc été possible qu’en poussant les limites d’impression lithographique. Cependant en réduisant les largeurs des transistors et l’espace entre eux, on augmente la sensibilité du transfert à ce que l’on appelle les effets de proximité optique au fur et à mesure des générations les plus avancées de 45 et 32 nm de dimension de grille de transistor.L’utilisation des modèles OPC est devenue incontournable en lithographie optique, pour les nœuds technologiques avancés. Les techniques de correction des effets de proximité (OPC) permettent de garantir la fidélité des motifs sur plaquette, par des corrections sur le masque. La précision des corrections apportées au masque dépend de la qualité des modèles OPC mis en œuvre. La qualité de ces modèles est donc primordiale. Cette thèse s’inscrit dans une démarche d’analyse et d’évaluation des modèles résine OPC qui simulent le comportement de la résine après exposition. La modélisation de données et l’analyse statistique ont été utilisées pour étudier ces modèles résine de plus en plus empiriques. Outre la fiabilisation des données de calibrage des modèles, l’utilisation des plateformes de création de modèles dédiées en milieu industriel et la méthodologie de création et de validation des modèles OPC ont également été étudié. Cette thèse expose le résultat de l’analyse des modèles résine OPC et propose une nouvelles méthodologie de création, d’analyse et de validation de ces modèles. / The Progress made in microelectronics responds to the matter of production costs reduction and to the search of new markets. These progresses have been possible thanks those made in optical lithography, the printing process principally used in integrated circuit (IC) manufacturing.The miniaturization of integrated circuits has been possible only by pushing the limits of optical resolution. However this miniaturization increases the sensitivity of the transfer, leading to more proximity effects at progressively more advanced technology nodes (45 and 32 nm in transistor gate size). The correction of these optical proximity effects is indispensible in photolithographic processes for advanced technology nodes. Techniques of optical proximity correction (OPC) enable to increase the achievable resolution and the pattern transfer fidelity for advanced lithographic generations. Corrections are made on the mask based on OPC models which connect the image on the resin to the changes made on the mask. The reliability of these OPC models is essential for the improvement of the pattern transfer fidelity.This thesis analyses and evaluates the OPC resist models which simulates the behavior of the resist after the photolithographic process. Data modeling and statistical analysis have been used to study these increasingly empirical resist models. Besides the model calibration data reliability, we worked on the way of using the models calibration platforms generally used in IC manufacturing.This thesis exposed the results of the analysis of OPC resist models and proposes a new methodology for OPC resist models creation, analysis and validation.

The present work aims to expand the possibilities of PD 3 control strategies implementation and to evaluate, in a practical way, different strategies of fuzzy logic application in the control of processes of a didactic plant (PD 3). This was accomplished by adding fuzzy control strategies to the conventional industrial control strategies with which the PD 3 system is factory configured. The conventional strategies use PID controllers and its variations (P, PI and PD) which parameters are preset and "implanted" in the instruments. Three fuzzy control strategies were performed with temperature as the main process variable to be controlled and flow as the secondary variable to be controlled. The first strategy was the fuzzy-PID temperature control; it was used the local PID controller of PD 3 and a strategy was developed in fuzzy logic in an external workstation, for tuning of the PID parameters in real time. The PD 3 controller acts directly on the power of the heating resistances, which is the manipulated variable. This way, the temperature was controlled in the process. The second strategy, called temperature fuzzy-PID + flow, continued using the same fuzzy-PID temperature controller but was added a fuzzy control to regulate the process flow variable. This fuzzy control was developed at the work station and directly manipulates the actuator of the intelligent water inlet control valve to the heating tank. Finally, a completely fuzzy strategy was developed to control temperature and flow variables of the process. Of the three strategies implemented, completely fuzzy controller presented the best response when observed all metrics and performance indicators. / O presente trabalho tem como objetivos ampliar as possibilidades de implementação de estratégias de controle da PD 3 e avaliar de forma prática diferentes estratégias de aplicação da lógica difusa no controle de processos de uma planta didática (PD 3). Isto foi realizado adicionando estratégias de controle difusas às estratégias convencionais de controle industrial, com as quais o sistema da PD 3 vem configurado de fábrica. As estratégias convencionais utilizam controladores do tipo PID e suas variações (P, PI e PD) cujos parâmetros são pré-ajustados e “implantados” nos instrumentos. Foram realizadas três estratégias de controle difuso com a temperatura como variável principal a controlar e a vazão como variável secundaria a controlar. A primeira estratégia foi o controle de temperatura difuso-PID, na qual foi utilizado o controlador PID local da PD 3 e foi desenvolvida uma estratégia em lógica difusa, em uma estação de trabalho externa, para a sintonia em tempo real dos parâmetros PID. O controlador da PD 3 atua diretamente sobre a potência das resistências de aquecimento, sendo esta a variável manipulada. Desta maneira se realizou o controle da temperatura no processo. A segunda estratégia, denominada temperatura difuso-PID + vazão, continuou usando o mesmo controlador de temperatura difuso-PID, mas foi adicionado um controle difuso para regular a variável vazão do processo. Este controle difuso foi desenvolvido na estação de trabalho e manipula diretamente o atuador da válvula de controle inteligente de entrada de agua ao tanque de aquecimento. Por último, foi desenvolvida uma estratégia totalmente difusa para controlar as variáveis temperatura e vazão do processo. Das três estratégias implementadas, a que apresentou melhor performance foi a do controlador totalmente difuso quando observadas as métricas e índices de desempenho.