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No description available.

In this work, we develop a many-body theory of electronic transport through single molecule junctions based on nonequilibrium Green’s functions (NEGFs). The central quantity of this theory is the Coulomb self-energy matrix of the junction ∑(C). ∑(C) is evaluated exactly in the sequential-tunneling limit, and the correction due to finite lead-molecule tunneling is evaluated using a conserving approximation based on diagrammatic perturbation theory on the Keldysh contour. In this way, tunneling processes are included to infinite order, meaning that any approximation utilized is a truncation in the physical processes considered rather than in the order of those processes. Our theory reproduces the key features of both the Coulomb blockade and coherent transport regimes simultaneously in a single unified theory. Nonperturbative effects of intramolecular correlations are included, which are necessary to accurately describe the highest occupied molecular orbital (HOMO)-lowest unoccupied molecular orbital (LUMO) gap, essential for a quantitative theory of transport. This work covers four major topics related to transport in single-molecule junctions. First, we use our many-body theory to calculate the nonlinear electrical response of the archetypal Au-1,4-benzenedithiol-Au junction and find irregularly shaped ‘molecular diamonds’ which have been experimentally observed in some larger molecules but which are inaccessible to existing theoretical approaches. Next, we extend our theory to include heat transport and develop an exact expression for the heat current in an interacting nanostructure. Using this result, we discover that quantum coherence can strongly enhance the thermoelectric response of a device, a result with a number of technological applications. We then develop the formalism to include multi-orbital lead-molecule contacts and multi-channel leads, both of which strongly affect the observable transport. Lastly, we include a dynamic screening correction to ∑(C) and investigate the optoelectric response of several molecular junctions.

No description available.

京都大学 / 0048 / 新制・課程博士 / 博士(理学) / 甲第21585号 / 理博第4492号 / 新制||理||1645(附属図書館) / 京都大学大学院理学研究科化学専攻 / (主査)教授 谷村 吉隆, 教授 林 重彦, 教授 寺嶋 正秀 / 学位規則第4条第1項該当 / Doctor of Science / Kyoto University / DGAM

Nanostructured silicon carbide (SiC) is considered today as a good alternative to the conventional materials for various multidisciplinary applications. In this thesis, SiC nanostructures were elaborated by means of electrochemical etching and laser ablation techniques. The first part of the thesis clarifies size-dependence of optical properties as well as importance of local-field effects onto the photoinduced electronic transitions of SiC nanostructures. In the second part of the thesis strong 15-fold photoluminescence enhancement of SiC nanoparticles is ensured by their near-field interactions with multipolar localized plasmons. Further, 287-fold and 72-fold plasmon-induced enhancement factors of two-photon excited luminescence and second harmonic generation is achieved, respectively. The main physical mechanisms responsible for the observed effects were described by three-dimensional finite-difference time domain simulations. Finally, the coupling effect of luminescent SiC nanoparticles to plasmonic nanostructures is used in the enhanced labelling of biological cells on the planar structures. As a perspective, colloidal plasmonic (Au@SiO2)SiC nanohybrids were elaborated and characterized.

Le carbure de silicium (SiC) nanostructuré est considéré aujourd'hui comme une bonne alternative aux matériaux traditionnels pour diverses applications multidisciplinaires. Dans cette thèse, des nanostructures de SiC ont été élaborées par gravure électrochimique et par ablation laser. La première partie de cette thèse décrit et explique la dépendance en taille des propriétés optiques ainsi que l'importance des effets de champ local sur les transitions électroniques photo-induites des nanostructures de SiC. Dans la seconde partie, il est démontré une amplification d’un facteur 15 de l’intensité de photoluminescence des nanoparticules de SiC par leurs interactions en champ proche avec les plasmons multipolaires localisées. En outre, un facteur 287 et un facteur 72, induits par le couplage plasmonique, sont obtenus respectivement pour les signaux de luminescence à deux photons et de génération de seconde harmonique. Les principaux mécanismes physiques responsables des effets observés ont été décrits par des simulations de type différences finies dans le domaine temporel en trois dimensions. Enfin, l'effet de couplage de nanoparticules de SiC luminescentes à des nanostructures plasmoniques en structures planes est utilisé pour améliorer le marquage de cellules biologiques. Une perspective est ouverte sur la réalisation et les premières caractérisations de suspension colloïdales de nanohybrides plasmonique (Au@SiO2)SiC. / Nanostructured silicon carbide (SiC) is considered today as a good alternative to the conventional materials for various multidisciplinary applications. In this thesis, SiC nanostructures were elaborated by means of electrochemical etching and laser ablation techniques. The first part of the thesis clarifies size-dependence of optical properties as well as importance of local-field effects onto the photoinduced electronic transitions of SiC nanostructures. In the second part of the thesis strong 15-fold photoluminescence enhancement of SiC nanoparticles is ensured by their near-field interactions with multipolar localized plasmons. Further, 287-fold and 72-fold plasmon-induced enhancement factors of two-photon excited luminescence and second harmonic generation is achieved, respectively. The main physical mechanisms responsible for the observed effects were described by three-dimensional finite-difference time domain simulations. Finally, the coupling effect of luminescent SiC nanoparticles to plasmonic nanostructures is used in the enhanced labelling of biological cells on the planar structures. As a perspective, colloidal plasmonic (Au@SiO2)SiC nanohybrids were elaborated and characterized.

This thesis presents a new theoretical formalism which incorporates dynamical effects in atomistic electronic structure and related calculations. This research, fundamental by nature, brings about a deeper understanding of the dynamical processes in a range of materials. This establishes technologically important correlation with experimentally measured macroscopic properties and materials characterization. This method—the first of its kind—is a natural and long overdue extension of customary adiabatically separated time-independent electronic structure methods. It accounts explicitly for atomic motion due to thermal and zero-point vibration. The approach developed requires no direct treatment of time dependence in the quantum mechanical calculations, making the method widely applicable utilizing currently available electronic structure and ab-initio molecular dynamics software. The formalism is extensively applied and demonstrated for the linear optical response of bulk gallium arsenide and electronic structure of the C(111) 2 x 1 surface. Both cases are complimented by comparison of key observables to experimental data which may be used to judge the quality of the results. The results are found to be in good agreement with experimental data, with most exceptions being readily explainable and well understood.

The structural, electronic, energetic and optical properties of the compound Li2B4O7 containing the substitutional defects Cu or Ag were investigated by means of calculations of first principles at the Density Functional Theory level using the LAPW method implemented in the computer code Wien2k. The isolated Cu and Ag defects are considered in four charge states (q = -1, 0, +1, +2) with objective to simulate situations of the capture of an electron or a hole. In all cases, the atomic positions are computationally relaxed, Cu – O and Ag – O chemical bonds nature carefully analyzed and local structure around the defects determined. It is found that the defects vastly perturbs its neighborhood and the Cu and Ag themselves exhibit significant off-site dislocation from initial Li position in their Cu1+ and Ag1+ charge states, which becomes especially more pronounced for the Cu0 and Ag0 defects. Only the Cu2+ and Ag2+ centers stabilize at the substitutional Li site. Resulting defect formation energies demonstrate that the Cu1+, Cu0, Ag1+, and Ag0 centers are the most stable ones. Electronic structure calculations reveal that the Cu and Ag ions introduce their d- and s-states within the gap and their energies and occupation depend strongly on the charge state of the defect. Experimental optical absorption spectra are well reproduced by the Cu1+ and Ag1+ defects spectra, leading to the conclusion that in the as-grown material just Cu1+ and Ag1+ centers are formed. In the case of irradiated compound, present study predicts formation of the interstitial Cu0 defects, whose presence should significantly change the optical absorption and emission of the material, as well as demonstrates the presence of new absorption peaks associated with the interstitial Ag0 and substitutional Ag2+ centers, which reasonably describe the experimental spectrum. / As propriedades estruturais, eletrônicas, energéticas e ópticas do composto Li2B4O7 contendo os defeitos substitucionais Cu ou Ag foram investigadas por meio de cálculos de primeiros princípios ao nível da Teoria do Funcional da Densidade, utilizando-se o método LAPW implementado no código computacional Wien2k. Os efeitos de troca-correlação foram considerados usando-se o potencial modificado de Becke-Johnson (mBJ) e a aproximação do gradiente generalizado (GGA) na parametrização PBEsol. As células contendo os defeitos (Cu ou Ag) foram estudadas em quatro estados de carga diferentes (q = -1, 0, +1, +2) com o objetivo de simular situações de captura de elétrons ou de buracos. Em todos os casos, as posições atômicas foram relaxadas, a natureza das ligações Cu – O e Ag – O cuidadosamente analisada e as estruturas locais em torno dos defeitos determinadas. Verificou-se que os defeitos perturbam amplamente suas vizinhanças e que os centros Cu1+ e Ag1+ exibem um deslocamento significativo a partir da posição inicial do Li, que se torna ainda mais acentuado para os centros Cu0 e Ag0. Apenas os defeitos Cu2+ e Ag2+ se estabilizam no sítio substitucional do Li. Os resultados das energias de formação dos defeitos demonstraram que os centros Cu1+, Cu0, Ag1+ e Ag0 são os mais estáveis. Cálculos de estrutura eletrônica revelaram que as impurezas introduzem os estados d e s dentro do gap, cujas energias e ocupações dependem fortemente do estado de carga do defeito. Os espectros ópticos experimentais foram bem reproduzidos pelos espectros dos centros Cu1+ e Ag1+ calculados, levando-se à conclusão de que somente estes centros são formados no material não irradiado. Durante a irradiação do composto, o presente estudo prevê a formação dos centros intersticiais Cu0, fato que deve alterar significativamente a absorção e emissão óptica do material, bem como demonstra a presença de novos picos de absorção associados aos centros intersticiais Ag0 e substitucionais Ag2+, os quais descrevem razoavelmente bem o espectro experimental. / São Cristóvão, SE