In dieser Arbeit werden organische Feldeffekttransistoren (OFETs) aus den verschiedenen Materialien Manganphthalocyanin (MnPc), [6,6]Phenyl-C61-butansäuremethylester (PCBM), 6,13-Bis(triisopropylsilyethinyl)pentacen (TIPS-Pentacen) und N,N’- Bis(n-octyl)-1,6-Dicyanoperylen-3,4:9,10-Bis(Dicarboximid) (PDI8-CN2) hergestellt. Dabei finden unterschiedliche Abscheidemethoden wie die Molekularstrahlabscheidung, die Ultraschallsprühbeschichtung und die Drehbeschichtung Anwendung. Die Morphologie sowie die Funktionsweise der Transistoren werden in Abhängigkeit von den Herstellungsparametern und bezüglich ihrer Stabilität gegenüber Lufteinfluss und elektrischer Belastung charakterisiert. Durch Aufdampfen von MnPc konnten so zum ersten Mal ambipolare MnPc-OFETs hergestellt und charakterisiert werden. Die bestimmten Löcher- und Elektronenbeweglichkeiten bestätigen die Eignung von MnPc für die Anwendung in Spintronik-Bauelementen. Desweiteren wird anhand gesprühter PCBM- und TIPS-Pentacen-OFETs gezeigt, dass die Ultraschallsprühbeschichtung eine geeignete Technik ist, um organische Halbleiter aus Lösung für die Verwendung in OFETs abzuscheiden. Die Abscheidung organischer Filme lässt sich mit einer Vielzahl an Parametern beeinflussen und die Funktionsweise von OFETs optimieren. In Verbindung mit den Untersuchungen aufgeschleuderter PDI8-CN2-OFETs konnte ein erheblicher Einfluss der Oberflächenenergie des verwendeten SiO2-Gateisolators auf die Korngröße im organischen Film festgestellt werden.

The present thesis is focused on the rational design of Diketopyrrolopyrrole based π- conjugated polymers for organic electronics. The thesis is organized into six different chapters and a brief description of the individual chapters is provided below. Chapter 1 briefly describes the physics governing the electronic processes occurring in organic photovoltaics (OPVs) and organic field-effect transistors (OFETs) followed by design rules for the synthesis of conjugated polymers for organic electronics. Diketopyrrolopyrrole (DPP) based π-conjugated materials and their development in OPVs and OFETs have been highlighted. Chapter 2 discusses the synthesis and characterization of a series of small molecules of DPP derivatives attached with different alkyl chains. Influence of side chains on the photophysical properties of these DPP derivatives have been studied by UV-visible spectroscopy and DFT calculations. Crystal structure studies revealed the effect of alkyl chains on the torsional angle, crystal packing, and intermolecular interactions such as π-π stacking. Chapter 3 reports the synthesis of novel diketopyrrolopyrrole-diketopyrrolopyrrole (DPPDPP) based conjugated copolymers and their application in high mobility organic field-effect transistors. Effect of insulating alkyl chains on polymer thin film morphology, lamellar packing and π-π stacking interactions have been studied in detail. Investigation of OFET performance of these DPP-DPP copolymers with branched alkyl chains (N-CS2DPP-ODEH) resulted in low charge carrier mobilities as compared to the polymers (N-CS2DPP-ODHE) with linear alkyl chains. Polymer with triethylene glycol side chains (N-CS2DPP-ODTEG) exhibited a high field-effect electron mobility value of ~3 cm2V-1s-1 with a very low threshold voltage of ~2 V. Chapter 4 investigates the effect of torsional angle on the intermolecular interactions and charge transport properties of diketopyrrolopyrrole (DPP) based polymers (PPDPP-OD-HE and PPDPP-OD-TEG). Grazing incidence x-ray diffraction studies shows the different orientation of the polymer crystallites and lamellar packing involved in polymer thin films. Investigation of OFETs evidenced the effect of torsional angle on the charge transport properties where the polymer with higher torsional angle PPDPP-OD-TEG resulted in high threshold voltage with less charge carrier mobility compared to the polymer with lower torsional angle (N-CS2DPP-OD-TEG). Chapter 5 investigates the effect of photoactive material morphology on the solar cell device performance, and charge transfer kinetics by adding high boiling point processing additives. DPP based donor-acceptor (D-A) type low band gap polymers (PTDPPQ and PPDPPQ) have been synthesized and employed in bulk-heterojunction (BHJ) solar cells with the acceptor PC71BM. Addition of processing additive 1,8-diiodooctane (DIO) resulted in three order improvements in power conversion efficiency (PCE). Chapter 6 describes the design and synthesis of two diketopyrrolopyrrole based copolymers (PPDPP-BBT and PTDPP-BBT) for their application in organic devices such as field-effect transistors and bulk-heterojunction solar cells. Investigation of OFET performance of these DPP based copolymers displayed hole mobilities in the order of 10-3 cm2V-1s-1. The semiconductor-dielectric interface has been characterized by capacitance-voltage, and Raman scattering methods. In summary, the work presented in this thesis describes the synthesis and characterization of diketopyrrolopyrrole based new polymeric semiconductors. Effects of insulating side chains and torsional angle on the charge transport properties of these polymers in OFETs have been investigated. This work also describes the effect of solvent additives on the active layer morphology and BHJ solar cell device performance. The results described here show that these materials have potential application as active components in plastic electronics.

The Thesis reports charge transport studies on conducting polymers, polymer carbon nanotube composites and organic semiconductor devices. Conducting and semiconducting polymers consisting of π-conjugated chains have attracted considerable attention as they combine the optoelectronic properties of semiconductors with mechanical properties and processing advantages of plastics. The chemical/electrochemical/photodoping of these semiconducting polymers can tune the Fermi levels and conductivity in a controlled way, and hence the properties of devices can be easily tailored to suit in several applications. Carbon nanotube (CNT) is another another novel promising material for electronic/optoelectronic applications. Lately there has been a great interest in developing composites of polymer and CNTs to utilize the advantages of both CNTs and polymers. The inclusion of CNTs in polymers improves the mechanical, electrical and thermal properties since the aspect ratio (ratio of length to diameter) is very large, as well its density is rather low. The Thesis consists of 6 chapters. First chapter is a brief introduction of general and transport properties of conducting polymers and polymer-carbon nanotube composites. In Chapter 2, the sample preparation and experimental techniques used in this work are discussed. The charge transport in poly(3,4-ethylenedioxythiophene)-poly(styrenesulfonate) (PEDOT-PSS) is presented in Chapter 3. Chapter 4 focuses on the transport measurements in the polymer-CNT composite samples. Chapter 5 elaborates the ac and dc characterization of organic field-effect transistors (OFETs). And chapter 6 presents the conclusion and future directions of the work that has been presented in the Thesis. Chapter 1: In the scientific and technological revolution of the last few years, the study of high performance materials has been steadily increasing including the study of carbon-based materials. Conducting polymers have special properties that are interesting for this new technology. The charge transport in conjugated polymers is important to optimize the performance of devices. The discovery of CNTs with exceptional thermal, mechanical, optical, electrical and structural properties has facilitated the synthesis of new type of nanocomposites with very interesting properties. Nanocomposites represent a guest-host matrix consisting of easily processible functionalized conjugated polymer as host, incorporating CNTs as fillers with versatile electronic and magnetic properties, which provide a wide range of technological applications. To optimize their electrical properties it is essential to understand the charge transport mechanism in detail. Chapter 2: The multi-wall carbon nanotubes (MWNTs) grown by thermal chemical vapor deposition (CVD) are mixed with a 1:1 mixture of 98% H2SO4 and 70% HNO3 to produce sulfonic acid functionalized multi-wall carbon nanotubes (s-MWNTs). The s-MWNTs are dispersed in a solution of Nafion by ultrasonication and then cast on a glass substrate and slowly dried by moderate heating to obtain the composite films. Polyaniline (PANI)-MWNT composites were obtained by carrying out the chemical synthesis of nanofibrilar PANI in the presence of CNTs. This water dispersible PANIMWNT composite contains well segregated MWNTs partially coated by nanofibrilar PANI. The ac and dc charge transport measurements suggest hopping transport in these materials. OFETs are fabricated with pentacene, poly(2,5-bis(3-tetradecylthiophen-2-yl)thieno[3,2-b]thiophene)(PBTTT) and poly(3-hexylthiophene) (P3HT) as active materials. A novel technique is used to characterize the acphotoresponse of these OFETs. Chapter 3: Charge transport studies on PEDOT-PSS have been carried out and found that it correlates with the morphology. The dc conductivity of PEDOT–PSS shows enhanced delocalization of the carriers upon the addition of dimethyl sulfoxide (DMSO) and this is attributed to the extended chain conformation. PEDOT-PSS is known to form a phase-segregated material comprising highly conducting PEDOT grains that are surrounded by a sea of weakly ionic-conducting PSS and a wide variation in the charge transport properties of PEDOT-PSS films is attributed to the degree of phasesegregation of the excess insulating polyanion. The magnetotransport and temperature dependent ac transport parameters across different conducting grades of PEDOT-PSS processed with DMSO were compared. Depending on the subtle alterations in morphology, the transport at low temperatures is shown to vary from the hopping regime (Baytron P) to critical regime of the metal-insulator transition (Baytron PH510) There is a significant positive magnetoresistance (MR) for P–films, but this is considerably less in case of PH510-film. From the low temperature ac conductance it is found that the onset frequency for PH510 is nearly temperature independent, whereas in P type it is strongly temperature dependent, again showing the superior transport in PH510. The presence of ‘shorter network connections’ together with a very weak temperature dependence down to ~ 5 K, suggest that the limitation on transport in PH510 arises from the connectivity within the PEDOT-rich grain rather than transport via the PSS barriers. Chapter 4: DC and AC charge transport properties of Nafion s-MWNT and PANI-MWNT composites are studied. Such a detailed investigation is required to optimize the correlation among morphology and transport properties in these composites towards applications in field-effect transistors, antistatic coating, electromagnetic shielding, etc. The conductivity in Nafion s-MWNT shows a percolative transport with percolation threshold pc = 0.42 whereas such a sharp percolation is absent in PANI-MWNT composite since the conduction via PANI matrix smears out the onset of rapid increase in conductivity. Three-dimensional variable range hopping (VRH) transport is observed in Nafion s-MWNT composites. The positive and negative MR data on 10 wt. % sample are analyzed by taking into account forward interference mechanism (negative MR) and wave-function shrinkage (positive MR), and the carrier scattering is observed to be in the weak limit. The electric-field dependence, measured to high fields, follows the predictions of hopping transport in high electric-field regime. The ac conductivity in 1 wt. % sample follows a power law: ( )  A s , and s decreases with increasing temperature as expected in the correlated barrier hopping (CBH) model. In general, Mott’s VRH transport is observed in PANI-MWNT samples. It is found that the MWNTs are sparingly adhered with PANI coatings, and this facilitates inter-tube hopping at low temperatures. The negative MR of MWNT-PANI composites suggest that the electronic transport at low temperatures is dominated by MWNT network. AC impedance measurements at low temperatures with different MWNT loading show that ac conductivity become temperature independent as the MWNT content increases. The onset frequency for the increase in conductivity is observed to be strongly dependent on the MWNT weight percentage, and the ac conductivity can be scaled onto a master curve given by  ( )  0[1 k( 0 )s ]. Chapter 5: Organic field-effect transistors (OFETs) based on small molecules and polymers have attracted considerable attention due to their unique advantages, such as low cost of fabrication, ease of processing and mechanical flexibility. Impedance characterization of these devices can identify the circuit elements present in addition to the source-drain (SD) channel, and the bottlenecks in charge transport can be identified. The charge carrier trapping at various interfaces and in the semiconductor can be estimated from the dc and ac impedance measurements under illumination. The equivalent circuit parameters for a pentacene OFET are determined from low frequency impedance measurements in the dark as well as under light illumination. The charge accumulation at organic semiconductor–metal interface and dielectric semiconductor interface is monitored from the response to light as an additional parameter to find out the contributions arising from photovoltaic and photoconductive effects. The shift in threshold voltage is due to the accumulation of photogenerated carriers under SD electrodes and at dielectric–semiconductor interface, and also this dominates the carrier transport. Similar charge trapping is observed in an OFET with PBTTT as the active material. This novel method can be used to differentiate the photophysical phenomena occurring in the bulk from that at the metal-semiconductor interface for the polymer. Chapter 6: The conclusions from the various works presented in the thesis are coherently summarized in this chapter. Thoughts for future directions are also summed up.

<p>The miniaturization and thinning of wearable, soft robotics and medical devices are soon to require higher performance modeling as the physical flexibility causes direct impacts on the electrical characteristics of the circuit – changing its behavior. As a representative flexible electronic component, the organic field effect transistor (OFET) has attracted much attention in its manufacturing as well as applications. However, as the strain and stress effects are integrated into multiphysics modelers with deeper interactions, the computational complexity and accuracy of OFET modeling is resurfacing as a limiting bottleneck.</p><p>The dissertation was organized into three interrelated studies. In the first study, the Mass-Spring-Damper (MSD) model for an inverted staggered thin film transistor (TFT) was proposed to investigate the TFT’s internal stress/strain fields, and the strain effects on the overall characteristics of the TFT. A comparison study with the finite element analysis (FEA) model shows that the MSD model can reduce memory usage and raises the computational convergence speed for rendering the same results as the FEA. The second study developed the generalized solid-state model by incorporating the density of trap states in the band structure of organic semiconductors (OSCs). The introduction of trap states allows the generalized solid-state model to describe the electrical characteristics of both inorganic TFTs and organic field-effect transistors (OFETs). It is revealed through experimental verification that the generalized solid-state model can accurately characterize the bending induced electrical properties of an OFET in the linear and saturation regimes. The third study aims to model the transient and steady-state dynamics of an arbitrary organic semiconductor device under mechanical strain. In this study, the fractional drift-diffusion (Fr-DD) model and its computational scheme with high accuracy and high convergence rate were proposed. Based on simulation and experimental validation, the transconductance and output characteristics of a bendable OFET were found to be well determined by the Fr-DD model not only in the linear and saturation regimes, but also in the subthreshold regime.</p>

The thesis is focused on the study of electric and dielectric properties of thin film organic materials that can be used as an active layer of photovoltaic cells. Primarily were studied the properties of the layers on the glass substrates, which consist of a thin active layer of phthalocyanines. On the samples were first measured current-voltage characteristics (in the dark and during the exposure) and the basic parameters of the photovoltaic conversion were determined. Finally were measured frequency dependencies (impedance spectra, in the dark and during the exposure) and the parameters of a model of the structure with organic semiconductor were determined. The obtained results will be used to optimize the properties of photovoltaic cells.

In dieser Arbeit werden organische Feldeffekttransistoren (OFETs) aus den verschiedenen Materialien Manganphthalocyanin (MnPc), [6,6]Phenyl-C61-butansäuremethylester (PCBM), 6,13-Bis(triisopropylsilyethinyl)pentacen (TIPS-Pentacen) und N,N’- Bis(n-octyl)-1,6-Dicyanoperylen-3,4:9,10-Bis(Dicarboximid) (PDI8-CN2) hergestellt. Dabei finden unterschiedliche Abscheidemethoden wie die Molekularstrahlabscheidung, die Ultraschallsprühbeschichtung und die Drehbeschichtung Anwendung. Die Morphologie sowie die Funktionsweise der Transistoren werden in Abhängigkeit von den Herstellungsparametern und bezüglich ihrer Stabilität gegenüber Lufteinfluss und elektrischer Belastung charakterisiert. Durch Aufdampfen von MnPc konnten so zum ersten Mal ambipolare MnPc-OFETs hergestellt und charakterisiert werden. Die bestimmten Löcher- und Elektronenbeweglichkeiten bestätigen die Eignung von MnPc für die Anwendung in Spintronik-Bauelementen. Desweiteren wird anhand gesprühter PCBM- und TIPS-Pentacen-OFETs gezeigt, dass die Ultraschallsprühbeschichtung eine geeignete Technik ist, um organische Halbleiter aus Lösung für die Verwendung in OFETs abzuscheiden. Die Abscheidung organischer Filme lässt sich mit einer Vielzahl an Parametern beeinflussen und die Funktionsweise von OFETs optimieren. In Verbindung mit den Untersuchungen aufgeschleuderter PDI8-CN2-OFETs konnte ein erheblicher Einfluss der Oberflächenenergie des verwendeten SiO2-Gateisolators auf die Korngröße im organischen Film festgestellt werden.

The high-frequency and low-voltage operation of organic thin-film transistors (OTFTs) is a key requirement for the commercial success of flexible electronics. Significant progress has been achieved in this regard by several research groups highlighting the potential of OTFTs to operate at several tens or even above 100 MHz. However, technology maturity, including scalability, integrability, and device reliability, is another crucial point for the semiconductor industry to bring OTFT-based flexible electronics into mass production. These requirements are often not met by high-frequency OTFTs reported in the literature as unconventional processes, such as shadow-mask patterning or alignment with unrealistic tolerances for production, are used. Here, ultra-short channel vertical organic field-effect transistors (VOFETs) with a unity current gain cut-off frequency (fT) up to 43.2 MHz (or 4.4 MHz V−1) operating below 10 V are shown. Using state-of-the-art manufacturing techniques such as photolithography with reliable fabrication procedures, the integration of such devices down to the size of only 12 × 6 μm2 is shown, which is important for the adaption of this technology in high-density circuits (e.g., display driving). The intrinsic channel transconductance is analyzed and demonstrates that the frequencies up to 430 MHz can be reached if the parasitic electrode overlap is minimized.