We study multi-photon ionization of rare gas atoms and small molecules by infrared femtosecond laser pulses. We demonstrate that ionization is accurately described by a tunnelling model when many infrared photons are absorbed. By measuring photo-electron and photo-ion spectra, we show how the sub-Ångstrom spatial resolution of tunnelling gives information about electron densities in the valence shell of atoms and molecules. The photo-electron and photo-ion momentum distributions are recorded with a velocity map imaging (VMI) spectrometer. We describe a tomographic method for imaging a 3-D momentum distribution of arbitrary symmetry using a 2-D VMI detector. We apply the method to measure the 3-D photo-electron distribution in elliptically polarized light. Using circularly polarized light, we show how the photo-electron momentum distribution can be used to measure the focused laser intensity with high precision. We demonstrate that the gradient of intensities present in a focused femtosecond pulse can be replaced by a single average intensity for a highly nonlinear process like multi-photon ionization. By studying photo-electron angular distributions over a range of laser parameters, we determine experimentally how the photon linear momentum is shared between the photo-electron, photo-ion and light field. We find the photo-electron carries only a portion of the total linear momentum absorbed. In addition we consider how angular momentum is shared in multi-photon ionization, and find the photo-electron receives all of the angular momentum absorbed. Our results demonstrate how optical and material properties influence the photo-electron spectrum in multi-photon ionization. These will have implications for molecular imaging using femtosecond laser pulses, and controlling the initial conditions of laser generated plasmas.

We study multi-photon ionization of rare gas atoms and small molecules by infrared femtosecond laser pulses. We demonstrate that ionization is accurately described by a tunnelling model when many infrared photons are absorbed. By measuring photo-electron and photo-ion spectra, we show how the sub-Ångstrom spatial resolution of tunnelling gives information about electron densities in the valence shell of atoms and molecules. The photo-electron and photo-ion momentum distributions are recorded with a velocity map imaging (VMI) spectrometer. We describe a tomographic method for imaging a 3-D momentum distribution of arbitrary symmetry using a 2-D VMI detector. We apply the method to measure the 3-D photo-electron distribution in elliptically polarized light. Using circularly polarized light, we show how the photo-electron momentum distribution can be used to measure the focused laser intensity with high precision. We demonstrate that the gradient of intensities present in a focused femtosecond pulse can be replaced by a single average intensity for a highly nonlinear process like multi-photon ionization. By studying photo-electron angular distributions over a range of laser parameters, we determine experimentally how the photon linear momentum is shared between the photo-electron, photo-ion and light field. We find the photo-electron carries only a portion of the total linear momentum absorbed. In addition we consider how angular momentum is shared in multi-photon ionization, and find the photo-electron receives all of the angular momentum absorbed. Our results demonstrate how optical and material properties influence the photo-electron spectrum in multi-photon ionization. These will have implications for molecular imaging using femtosecond laser pulses, and controlling the initial conditions of laser generated plasmas.

Doctor of Philosophy / Department of Physics / Daniel Rolles / Imaging the structures of molecules, understanding the molecular dynamics in onization and dissociation processes and, most importantly, observing chemical reactions, i.e. the making and breaking of chemical bonds in real time, have become some of the most exciting topics in the atomic and molecular physics. The rapid advances of experimental tools such as synchrotron radiation light sources, free-electron lasers and continuing advances of tabletop femtosecond ultrashort lasers that provide laser pulses at a variety of wavelengths have opened new avenues for understanding the structure of matter and the dynamics of the chemical interactions. In addition, significant improvements in computational techniques and molecular dynamic simulations have provided complementary theoretical predictions on structures and chemical dynamics. The Coulomb explosion imaging method, which has been developed and applied in many studies in the last three decades, is a powerful way to study molecular structures. The method has mostly been applied to small diatomic molecules and to simple polyatomic molecules. In this thesis, Coulomb explosion imaging is applied to study the structure of isomers, molecules that have the same chemical formula but different chemical structures. Specifically, by taking inner-shell photoionization as well as strong-field ionization approaches to ionize and fragment the molecules and by using coincidence electron-ion-ion momentum imaging techniques to obtain the three-dimensional momentum of fragment ions, structures of isomers are distinguished by using the correlations among product ion momentum vectors. At first, the study aims to understand if the Coulomb explosion imaging of geometrical isomers can identify and separate cis and trans structures. Secondly, in order to extend the application of the Coulomb explosion imaging method to larger organic molecules to test the feasibility of the method for identifying structural isomers, photoionization studiesof 2,6- and 3,5-difluoroiodobenzene have been conducted. In addition, using the full three-dimensional kinematic information of multi-fold coincidence channels, breakup dynamics of both cis/trans geometric isomers and structural isomers, and in particular, sequential fragmentation dynamics of the difluoroiodobenzene isomers are studied. Furthermore, for each study, Coulomb explosion model simulations are conducted to complement the experimental results. The results of the Coulomb explosion imaging reseach in this thesis paves the way for future time-resolved Coulomb explosion imaging experiments aiming to understand the transient molecular dynamics such as photoinduced ring opening reactions and cis/trans isomerization processes in gas-phase molecules.

When loss of material due to sliding of two solids is promoted/prevented, in the presence of chemically reacting liquid or gas, tribochemical wear is said to occur. Tribochemical wear, in which corrosive media promotes material loss, is a serious concern in a variety of applications like machining, bio-implants, gas turbine engines etc. The most pervasive corrosive media encountered in applications are water and air. Air also contains water vapour along with oxygen, both of which adsorb and react with most materials, thus influencing their wear behaviour. The need for higher operating temperatures and compression ratios in gas turbine engines require development of high temperature wear resistant coatings to protect their soft metallic components. Ti based nitride coatings with Ti, Al, Si, Cr, Ta, Nb, V are known for wear resistance because of their high hardness which is second only to diamond and c-BN. High O affinity of these elements, induce the coatings to form passive oxide scale up to reasonably high temperatures and offer superior corrosion and oxidation resistance. However, sliding can remove the passivating layer, exposing the native surface to the environment which can lead to enhanced tribochemical wear. Oxidation resistance under static conditions does not guarantee low tribochemical wear; however, the tribochemical reactions causing the corrosion are of interest. Another concern is that sliding in unison with high temperatures can activate processes like enhanced diffusion, phase transformations in nitride coatings as well as in the substrate. Hence one of our objectives is to perform wear tests at high temperatures to understand the dominant mechanisms that affect wear in nitride coatings. Wear tests in the range of room temperature up to the oxidation limit of these coatings are designed.In this study TiN and high aluminium containing TiAlN coatings are chosen to study understand the wear behaviour as function of temperature up to 800°C [1]–[3]. In order to study wear of coatings, it is necessary to identify the best possible materials and methods. Though under the targeted application the coatings have to perform under fretting tests, pin on disk configuration is used which simplifies the analysis and gives deeper insight into the wear mechanism. Coated ball is used as the pin which is stationary unlike many earlier studies where the coating is applied on the rotating disk. The purpose of keeping the pin stationary is to minimize the counter-face wear and, instead, accelerate wear in these hard coatings. This method also enables easy and accurate measurement of wear depth and volume by using an optical microscope, while the conventional coated disk method requires profilometry and statistically sound measurements. To enable coating performance, substrate should not undergo much loss of strength before 800°C and hence aerospace grade IN718 alloy is chosen as the substrate which softens slowly beyond 650°C. Alumina is used as counter-face, since it has high hardness, excellent mechanical, chemical and thermal stability. In the current study, TiAlN coating is tested for wear in the range of room temperature to 800°C. Figure 1 represents the data obtained from the wear experiments. It is found that the wear is higher with large scatter at room temperature while it remains constant from 200- 750°C. Two important observations are made, firstly that the TiAlN is susceptible to some kind of a corrosive wear at room temperature which depended on the timing of the tests and secondly that the coating shows a surprisingly constant wear behaviour over the temperature range of 200-750°C. The scatter at room temperature is found to be linked with seasonal fluctuation of humidity which is verified by performing tests under controlled humidity conditions. Water vapour and oxygen are potential reacting gases present in air. Oxidation and oxidative wear is known to occur in many materials as temperatures increase which seem to be linked to thermal activation of oxidation. However lower wear at 200°C and above compared to room temperatures suggests something else to be happening .It is evident then that between room temperature and 200°C lies a transition of some kind in the tribochemical reaction which is responsible for the observed wear behaviour of TiAlN. A detailed study to understand this transition is then undertaken for the composition of TiN coatings so that benchmarking and comparison with TiAlN is possible. Also if the wear behaviour of TiN is found similar to TiAlN then it would indicate a general phenomenon which can be extended to Ti based nitrides. Figure 1 Wear rate as a variation of temperature for TiAlN coatings In contrast to low temperature wear behaviour of TiAlN, a constant wear in the range of 200-750°C is surprising because the primary suspect which is oxidation is thermally activated. The oxide scale though expected to be thin at low temperatures, has to increase in thickness with temperature due to increased diffusion and reaction rates. The oxide scale also undergoes a change in morphology and composition which indicate a lower oxidation resistance as temperature increases. A preliminary characterization of the wear scar on the ball shows that the oxide inside the worn region is thinner than the oxide outside at 750°C. The amount of O within the wear scar is similar to levels observed on as deposited surface while the surface outside the wear scar shows oxidation and discolouration. The results suggest that oxidation inside worn region at high temperatures might be slower than the expected parabolic oxidation occurring outside the wear region. It is speculated that a double layer oxide is formed with TiO2 towards the surface and Al2O3 towards the nitride which is responsible for the lower wear at high temperature. This is supported by the fact that larger amount of Ti is found in the wear debris as temperature inceases. Superficial surface cracks appear at higher loads at temperatures as low as 600°C but they affect wear only above 800°C due to substrate softening. This shows that the coatings are still limited by the substrate softening temperature and could be used at higher temperatures. Tribo-reaction in metals, nitrides and carbides can be brought about in the presence of O2 or water vapour. Tribochemical wear of SiN, SiC, TiN, TiAlN, alumina and most other ceramics at room temperature are found to depend on humidity[4]–[6]. But only tribo-oxidation due to O2 is found to operate at high temperatures[7], [8]. Notwithstanding, it is known that SiC and SiN are more resistant to attack from O2 above 800°C than from steam. Hence the role played by water vapour is found to be convoluted. Moreover, relative humidity is the frequently mentioned quantity with regard tribochemical wear at room temperatures. It should be noted that relative humidity is not a measure of chemical activity of water vapour. Rather the water vapour pressure which represents the chemical activity of water, is not given much importance in the earlier studies. In this study, the importance of humidity, water vapour pressure and temperature in influencing wear, is studied by performing controlled wear tests on TiN. To explore the effect of temperature and water vapour pressure, TiN is tested varying temperature range of 28 °C to 90°C and water vapour pressure in the range of 3-35 mm-of-Hg. Wear tests are conducted keeping temperature constant with varying water vapour pressure and vice versa. The results show that, wear increased with humidity/vapour pressure at a fixed temperature but wear dropped drastically with increase in temperature at constant vapour pressure up to a critical temperature beyond which wear remained constant. This is one of the major unexpected findings since temperature is expected to increase wear volume. Also the critical temperature is found to shift to higher temperatures as water vapour pressures increased. It was suspected that capillary condensation was playing a role in the wear which was later verified. The whole wear behaviour is shown to be correlated with the amount of capillary condensed water. The large radius of curvature of the asperities on the polished coating surface and the smooth surface formed on the counter-face due to debris compaction form conditions favourable for capillary condensation. Any two hydrophilic surfaces which come in contact can form capillary condensation to occur at the cusps formed around the contact. However a threshold pore size of about 1nm existed below which condensation did not influence wear. Another observation is that the water vapour did not affect wear significantly in the absence of condensation for TiN coatings. As temperatures increased condensation became unfavourable, but the high vapour pressure present showed no signs of wear enhancement. This is surprising and unexpected compared to earlier reports.[9], [10] On contrary tests in liquid water showed expected behaviour for tribochemical reaction i.e wear increased with temperature. The wear in liquid water is highest when compared studies in air at any given temperature. The X-ray electron emission spectroscopy (XPS) analysis is performed to understand the surface reactions. It appears that O2 forms a barrier oxide which protects the nitride from reacting with water vapour. However when condensation occurs or in water, the oxygen and water collude into forming softer hydroxide layer which is easily removed. Though chemically water and water vapour are same, they affect wear in TiN very differently. Summarising the synopsis, exploration into high temperature wear of TiAlN reveals that it can handle oxidative wear upto 750°C showing constant wear over the temperature range of 200-750°C. Reduction in residual stresses and substrate softening may be responsible for higher wear at higher loads since the cracking is observed at 5N is absent at 3N. The substrate is expected to soften above 650°C but this does not necessarily affect wear until the load is increased or the temperature is sufficiently high. However TiAlN and TiN coatings showed susceptibility to tribo-corrosion in water and high humidity at room temperature. At high humidity, condensation of water leads to increase in wear. The dependence of wear on humidity is found to be because of capillary condensation. The negligible dependence of wear on humidity in the absence of condensation is ascribed to formation of oxide layer due to reaction with O2 and coating. The oxide barrier formed due to atmospheric O2 protects the coating from reacting with the water vapour. The oxide barrier on TiN forms faster indicating O2 reaction to be faster than the reaction with water vapour. In the presence of capillary condensation or water, O2 is depleted from contacting surfaces thus hindering the formation of the barrier oxide, increasing wear. As temperature increases the condensation becomes unfavourable and barrier oxide dominates the wear mechanism upto high temperatures which is dominated by oxidative wear.

Depuis l'invention du transistor MOS à effet de champ dans les années 60, l'exploitation de cette brique élémentaire a permis une évolution exponentielle du domaine de la microélectronique, avec une course effrénée vers la miniaturisation des dispositifs électroniques CMOS. Dans ce contexte, l'introduction des oxydes "high-κ" (notamment HfO2) a permis de franchir la barrière sub-nanométrique de l'EOT (Equivalent Oxide Thickness) pour l’oxyde de grille. Les travaux actuels concernent notamment la recherche de matériaux "high-κ" et de procédés qui permettraient d'avoir une interface abrupte, thermodynamiquement stable avec le silicium, pouvant conduire à des EOTs de l'ordre de 5Å. L’objectif de cette thèse, était d’explorer le potentiel de l’oxyde LaAlO3 amorphe déposé sur silicium par des techniques d’Épitaxie par Jets Moléculaires, en combinant des études sur les propriétés physico-chimiques et électriques de ce système. Le travail de thèse a d’abord consisté à définir des procédures d'élaboration sur Si de couches très minces (≈4nm), robustes et reproductibles, afin de fiabiliser les mesures électriques, puis à optimiser la qualité électrique des hétérostructures en ajustant les paramètres de dépôt à partir de corrélations entre résultats électriques et propriétés physico-chimiques (densité, stœchiométrie, environnement chimique…) et enfin à valider un procédé d'intégration du matériau dans la réalisation de MOSFET. La stabilité et la reproductibilité des mesures ont été atteintes grâce à une préparation de surface du substrat adaptée et grâce à l'introduction d'oxygène atomique pendant le dépôt de LaAlO3, permettant ainsi une homogénéisation des couches et une réduction des courants de fuite. Après optimisation des paramètres de dépôt, les meilleures structures présentent des EOTs de 8-9Å, une constante diélectrique de 16 et des courants de fuite de l'ordre de 10-2A/cm². Les caractérisations physico-chimiques fines des couches par XPS ont révélé des inhomogénéités de composition qui peuvent expliquer que le κ mesuré soit inférieur aux valeurs de LaAlO3 cristallin (20-25). Bien que les interfaces LAO/Si soient abruptes après le dépôt et que LaAlO3 soit thermodynamiquement stable vis-à-vis du silicium, le système LAO amorphe /Si s’est révélé instable pour des recuits post-dépôt effectués à des températures supérieures à 700°C. Un procédé de fabrication de MOSFETs aux dimensions relâchées a été défini pour tester les filières high-κ. Les premières étapes du procédé ont été validées pour LaAlO3. / Since MOS Field Effect Transistor invention in the 60's, the exploitation of this elementary piece of technology allowed an exponential evolution in the microelectronic field, with a frantic race towards miniaturization of CMOS electronic devices. In this context, the introduction of "high-κ" oxides (notably HfO2) allowed to cross the sub-nanometer barrier of EOT (Equivalent Oxide Thickness) for the gate oxide. Current work are notably related to "high-κ" research materials and processes that would allow an abrupt and thermodynamically stable interface with respect to silicon, that may lead to EOTs of about 5Å. The purpose of this thesis was to explore the potential of amorphous oxide LaAlO3 deposited on silicon by techniques of molecular beam epitaxy, combining studies of the physicochemical and electrical properties of this system. The thesis work has first consisted in defining procedures for the preparation of very thin (≈ 4 nm), robust and reproducible layers on Si in order to allow reliable electrical measurements then to optimize the electrical quality of the hetero-structures by adjusting deposition parameters from correlations between electrical results and physicochemical properties (density, stoichiometry, chemical environment...) and finally to validate a method for integrating the material in the realization of MOSFET. The stability and reproducibility of the measurements were achieved thanks to an adapted surface preparation of the substrate and by the introduction of atomic oxygen during the LaAlO3 deposition, thus allowing homogenization of layers and reducing leakage currents. After optimizing the deposition parameters, the best structures exhibit EOTs of 8-9 A, a dielectric constant of 16 and leakage currents in the range of 10-2 A/cm². Accurate physico-chemical characterizations of thin layers by XPS revealed composition inhomogeneities that can explain why the measured κ is less than values of crystalline LaAlO3 (20-25). Although the LAO/Si interfaces are steep after deposition and LaAlO3 is thermodynamically stable with respect to the silicon, amorphous system LAO/Si has proven unstable during post-deposition annealing carried out at temperatures above 700 ° C. A process for producing MOSFETs with released dimensions was defined to test high-κ field. The first stages of the process have been validated for LaAlO3.