Metal–organic frameworks (MOFs) are emerging as an appealing class of highly tailorable electrically conducting materials with potential applications in optoelectronics. Yet, the realization of their proof-of-concept devices remains a daunting challenge, attributed to their poor electrical properties. Following the authors’ recent report on a semiconducting Fe₃(THT)₂(NH₄)₃ (THT: 2,3,6,7,10,11-triphenylenehexathiol) 2D MOF with record-high mobility and band-like charge transport, here, Fe₃(THT)₂(NH₄)₃ MOF-based photodetector operating in photoconductive mode capable of detecting a broad wavelength range from UV to NIR (400–1575 nm) is demonstrated. The narrow IR bandgap of the active layer (≈0.45 eV) constrains the performance of the photodetector at room temperature by band-to-band thermal excitation of charge carriers. At 77 K, the device performance is significantly improved; two orders of magnitude higher voltage responsivity, lower noise equivalent power, and higher specific detectivity of 7 × 10⁸ cm Hz¹/² W⁻¹ are achieved under 785 nm excitation. These figures of merit are retained over the analyzed spectral region (400–1575 nm) and are commensurate to those obtained with the first demonstrations of graphene and black phosphorus based photodetectors. This work demonstrates the feasibility of integrating conjugated MOFs as an active element into broadband photodetectors, thus bridging the gap between materials’ synthesis and technological applications.

<p>The purpose of this study is to develop a flexible computer tool to predict the power produced by a photovoltaic (PV) panel. The performance of the PV panel is dependent on the incident solar radiation and the cell temperature. The computer tool predicts voltage-current curves, power-voltage curves, and maximum power point values. Five different models are implemented to predict the temperature of the panel, and comparison between the different thermal models is good. A thermal capacitance approach that uses a simple relationship for the forced convection heat transfer coefficient is used to predict the cell temperature. Both the electrical and temperature models are verified through comparisons using PVWatts and validated by comparisons to measured values. The model is flexible in the sense that it can be applied to PV arrays of any size, at any location, and of different cell types. After being verified and validated, the model is used to investigate the effects of cooling on the photovoltaic panel to improve the panel efficiency and increase its power output. Typical results show that for every degree Celsius rise in temperature, the efficiency of the solar panel is reduced by 0.5%. The effect of cooling and the resulting increase in energy production in two different climatic zones are studied and discussed. </p>

<div>In this paper various applications of axial tensile load, bending load, and rolling loading has been applied to a Copper Indium Gallium Diselenide (CIGS) Solar Cell to lean how it would affect the solar cell parameters of: Open circuit voltage (Voc), Short circuit current, (Isc), Maximum power (Pmax), and Efficiency (EFF), and Fill Factor (FF). These Relationships were found for with three different experiments. The first experiment the applies axial tensile stress is to a CIGS solar cell ranging from 0 to 200 psi with various strain rates: 0.0001, 0.001, 0.01, and 0.1 in/sec as well as various relaxation time: 1min, 5min, and 10 min while the performance of solar cell is measured. The results of this gave several trends couple pertaining the Voc . The first is that open circuit voltage increases slightly with increasing stress. The second is the rate of increase (the slope) increases with longer relaxation times. The second set of trend pertains to the Isc. The first is that short circuit current generally is larger with larger stress. The second is there seems to be a general increase in the Isc up to a given threshold of stress. After that threshold the Isc seems to decrease. The threshold stress varies depending on strain rate and relaxation time. The second set of experiments consisted of holding a CIGS solar cell in a fixed curved position while it was in operational use. The radii of the curved cells were: 0.41, 0.20, 0.16, 0.13, 0.11, 0.094, and 0.082 m. The radii were performed for both concave and convex cell curvature. The trends for this show a slight decrease in all cell parameters with decreasing radii, the exception being Voc which is not effecting, the convex curvature causing a slightly faster decrease than the concave. This set of experiments were also processed to find the trends of the single diode model parameters of series resistance (Rs), shunt resistance (Rsh), dark current (I0), and saturation current (IL), which agreed with the experimental results. The second experiment consisted of rolling a CIGS solar cell in tensile (cells towards dowel.) and compression (cells away from dowel) around a dowel to create internal damage. The diameter of the dowels decreased. The dowel diameters were: 2. 1.75, 1.25, 1, 0.75, 0.5, and 0.25 inches. This experiment showed similar trends as the bending one but also had a critical diameter of 1.75 in where beyond that damage much greater. Finally a parametric study was done in COMSOL Multiphysics® to examine how changes in the CIGS material properties of electron mobility (EM), electron life time, (EL), hole mobility 15 (HM), and Hole life time (HL) effect the cell parameters. The trends are of an exponential manner that converges to a given value as the material properties increase. When EL, EM, HL are very small, on the order of 10-4 times smaller than their accepted values, a transient like responses occurs.<br></div>

Recent advances in atomically thin two-dimensional materials have led to various promising technologies such as nanoelectronics, sensing, energy storage, and optoelectronics applications. Graphene with sp2-bonded carbon atoms densely packed in a honeycomb crystal lattice has attracted tremendous interest with excellent electrical, optical, mechanical, and chemical properties. In this work, graphene’s mechanical properties, chemical properties, and piezoelectric properties are explored as graphene is implemented in the automotive electrical distribution system. Graphene is useful in friction reduction, corrosion protection, and piezoelectric energy harvesting cell improvement. Besides graphene, transition metal dichalcogenides (TMDs), which are the metal atoms sandwiched between two chalcogen atoms, have also attracted much attention. Unlike graphene, many TMDs are semiconductors in nature and possess enormous potential to be used as a potential channel material in ultra-scaled field-effect transistors (FETs). In this work, chemical doping strategies are explored for the tunnel FETs applications using different metal phthalocyanines and polyethyleneimines as dopants. TMDs FETs can also be used as a selective NO₂ gas sensor with a polydimethylsiloxane filter and a highly sensitive photo-interfacial gated photodetector application.

Electronic devices made of organic molecules are starting to show their transfomative power in various fields of application today. However, as with most technologies, progress is eventually bounded by how well the inner workings of the components are understood. For electronic devices, as the name suggests, this mostly concerns the behavior of electrons or, more generally, electric charge carriers. To understand and predict device properties, knowledge of the mechanisms that govern the fate of charge carriers is indispensable. In an organic material, those mechanisms are closely related to material properties on a molecular level. Thus, the micro- and macroscale are linked in a complex manner and many questions about these links are still open. This work aims to advance the understanding of three important aspects of the field: the time-evolution of charge carrier states, the mechanism of molecular doping and the efficiency of organic solar cells and photodetectors. All three are strongly affected by a common property of organic materials: disorder. Specifcally, we extend the theoretical framework of describing the time-dependence of charge carrier motion in disordered semiconductors and use it to predict the time-dependence of recombination in organic solar cells. We find that, just as transport, recombination slows down with time, and establish a quantitative method of extracting material characteristics from the measured time-dependence of recombination. To analyze the influence of molecular doping on charge transport, we develop a computational method based on percolation theory. We show that for organic semiconductors, the popular transport energy model can not be used to predict the thermoelectric properties. The latter are important since they are often used to measure the amount of free charges introduced by doping. We are able to accurately model the activation energy of conductivity and study the important length scales and the influence of molecular parameters. Finally, we investigate the consequences of disorder on the performance of solar cells and photodetectors by studying the timescale and efficiency of the separation of photo-generated positive and negative charges. We find that, depending on the conditions, separation can in fact be either enhanced or hindered by disorder effects.

The absorptance in vertical nanowire (nw) arrays is typically dominated by three optical phenomena: radial mode resonances, near-field evanescent wave coupling, and Fabry–Perot (F-P) mode resonances. The contribution of these optical phenomena to GaAs, InP and InAs nw absorptance was simulated using the finite element method. The study compared the absorptance between finite and semi-infinite nws with varying geometrical parameters, including the nw diameter (D), array period (P), and nw length (L). Simulation results showed that the resonance peak wavelength of the HE1n radial modes linearly red-shifted with increasing D. The absorptance and spectral width of the resonance peaks increased as L increased, with an absorptance plateau for very long nws that depended on D and P. Near-field coupling between neighbouring nanowires (nws) was observed to increase with increasing diameter to period ratio (D/P). The effect of F-P modes was more pronounced for shorter nws and weakly coupled light. Based on the collective observation of the correlation between nw geometry and optical phenomena in GaAs, InP, and InAs nw arrays, a periodic array of vertical InSb nws was designed for photodetectors in the low-atmospheric absorption window (λ = 3-5 μm) within the mid-wavelength infrared (MWIR) spectrum (λ = 3-8 μm). Simulations, using the finite element method, were implemented to optimize the nw array geometrical parameters (D, P, and L) for high optical absorptance (~0.8), which exceeded that of a thin film of equal thickness. The results further showed that the HE1n resonance wavelengths in InSb nw arrays can be tuned by adjusting D and P, thus enabling multispectral absorption throughout the near infrared (NIR) to MWIR region. Optical absorptance was investigated for a practical photodetector consisting of a vertical InSb nw array embedded in bisbenzocyclobutene (BCB) as a support layer for an ultrathin Ni contact layer. Polarization sensitivity of the photodetector was examined. Lastly, how light flux enters the nw top and sidewalls on HE11 resonance was investigated. / Dissertation / Doctor of Philosophy (PhD)

Metallhalogenid Perowskite sind eine aufkommende Klasse von Halbleitermaterialien, die einige der besten Eigenschaften von organischen und anorganischen Halbleitern vereinen. Die Materialien kombinieren eine hohe Leitfähigkeit und modulierbare Bandlücke mit hohem Absorptionskoeffizienten und Löslichkeit in organischen Lösungsmitteln. Verarbeitungsmethoden wie Tintenstrahldruck ermöglichen somit die Herstellung von kristallinen Halbleitern mit direkter Bandlücke aus Lösung. Zunächst werden in einem kombinatorischen Druckprozess drei Perowskittinten, aus drei separaten Druckköpfen, während des Druckprozesses gemischt. Es resultiert eine Reihe von Perowskitfilmen mit genau definierten Zusammensetzungen. Die Kontrolle über die resultierenden Materialeigenschaften wird durch die Herstellung einer Reihe wellenlängenselektiver Fotodetektoren und Langpassfiltern demonstriert, die zu einem tintenstrahlgedruckten dispersionselementfreien Spektrometer kombiniert werden. Weiterhin wird mit den Möglichkeiten eines Tintenstrahldruckers für großflächige Bearbeitung ein etabliertes Verfahren für Tintenstrahl-gedruckte Perowskit-LEDs (PeLEDs) hochskaliert. Mit dem gleichen Druckverfahren und der gleichen Tintenzusammensetzung wurde die aktiv emittierende Fläche von 4 mm² auf 1600 mm² erhöht. Es konnte ein homogener Perowskit Dünnfilm für PeLEDs gedruckt werden, ohne einen Anstieg des Leckstroms mit steigender Fläche zu verursachen. Zuletzt werden die Strukturierungsmöglichkeiten des Tintenstrahldrucks genutzt um zweifarbige PeLEDs herzustellen. Auf einer primären Perowskitschicht wird eine zweite Perowskit-Vorläufertinte aufgebracht. Während des Betriebs erfährt der gemischte Halogenid-Perowskit eine Phasenseparierung und zeigt nur tiefrote Emission von iodidreichen Domänen vor einem hellgrünen emittierenden Hintergrund, dessen Helligkeit nicht durch den Strukturierungsprozess vermindert wird. / Metal halide perovskites are an emerging semiconductor material class that combines some of the best properties of inorganic and organic semiconductors. The material pairs high conductivity and composition-based bandgap tunability with solution processability and high absorption coefficients. Deposition methods like inkjet printing thus allow for the fabrication of crystalline, direct bandgap semiconductors from solution for various applications. First, in a combinatorial printing approach, three perovskite precursor inks, from three separate printheads, are mixed during the printing process. By controlling the perovskite composition, material properties such as the bandgap can be tuned. This is demonstrated by fabrication of a range of wavelength-selective photodetectors and longpass filters, which are combined to yield an inkjet-printed, dispersion element-free spectrometer. Furthermore, using the large-scale capabilities of an inkjet printer, a previously established procedure for inkjet-printed perovskite LEDs (PeLEDs) is upscaled. The actively emitting area is increased from 4 mm² to 1600 mm² using the same printing procedure and ink formulation. This achieved a homogeneous perovskite film, that showed no increase in leakage current, independent of size. Finally, using the patterning capabilities of inkjet printing, dual coloured red/green PeLEDs are fabricated in a sequential printing process. On a primary perovskite layer, a second perovskite precursor ink is deposited. Under operation in a PeLED, the mixed halide perovskite experiences phase segregation and only shows deep red emission from iodide-rich domains against a bright green emitting background, which still performs as well as a non-patterned device.

Highly responsive organic photodetectors allow a plethora of applications in fields like imaging, health, security monitoring, etc. Photomultiplication-type organic photodetectors (PM-OPDs) are a desirable option due to their internal amplification mechanism. However, for such devices, significant gain and low dark currents are often mutually excluded since large operation voltages often induce high shot noise. Here, a fully vacuum-processed PM-OPD is demonstrated using trap-assisted electron injection in BDP-OMe:C60 material system. By applying only −1 V, compared with the self-powered working condition, the responsivity is increased by one order of magnitude, resulting in an outstanding specific detectivity of ≈1013 Jones. Remarkably, the superior detectivity in the near-infrared region is stable and almost voltage-independent up to −10 V. Compared with two photovoltaic-type photodetectors, these PM-OPDs exhibit the great potential to be easily integrated with state-of-the-art readout electronics in terms of their high responsivity, fast response speed, and bias-independent specific detectivity. The employed vacuum fabrication process and the easy-to-adapt PM-OPD concept enable seamless upscaling of production, paving the way to a commercially relevant photodetector technology.

Organic semiconductor technology has gained attention in both the sensor and display markets due to its low cost and simple fabrication techniques. The ability to fabricate organic semiconductor devices such as photodetectors and transistors on a flexible, lightweight substrate makes them less fragile and ideal candidates for portable large-area imaging applications. The use of organic semiconductor technology in large-area medical imaging can bring about a new generation of flexible and lightweight indirect X-ray imagers. These imagers are immune to mechanical shock and should be ideal for portable intraoral X-ray radiology. In order to realize these organic flexible imagers and their use in large-area medical imaging, many challenges associated with the device performance and fabrication need to be overcome. Among these challenges, one of the greatest is to improve the dark current performance of the organic semiconductor photodetectors (key for imager performance) with a high-photo to-dark current ratio. Low dark current is needed to improve the sensitivity of the imager, whereas a large photo-to-dark current ratio reduces noise in the extracted image. Numerous techniques have been reported to improve the dark current performance in vertical organic photodetector design; however, lateral photodetectors still lack research attention. This thesis presents a lateral multilayer photodetector design and a simplified technique to improve the dark current performance of lateral organic semiconductor photodetectors. Our technique allows us to apply a large bias voltage while maintaining a low dark current, high photo-to-dark current ratio, and improves detector speed; thus, the overall sensitivity of the detector is improved. We further show the integration of an organic photodetector with an organic backplane readout circuit to form a flexible large-area imager. This imager can be used for large-area digital imaging applications such as in medical radiology.

<div>The manufacturing cost of solar cells along with their efficiency and reliability define the levelized cost of electricity (LCOE). One needs to reduce LCOE to make solar cells cost competitive compared to other sources of electricity. After a sustained decrease since 2001 the manufacturing cost of the dominant photovoltaic technology based on c-Si solar cells has recently reached a plateau. Further reduction in LCOE is only possible by increasing the efficiency and/or reliability of c-Si cells. Among alternate technologies, organic photovoltaics (OPV) has reduced manufacturing cost, but they do not offer any LCOE gain because their lifetime and efficiency are significantly lower than c-Si. Recently, perovskite solar cells have showed promising results in terms of both cost and efficiency, but their reliability/stability is still a concern and the physical origin of the efficiency gain is not fully understood.</div><div><br></div>In this work, we have collaborated with scientists industry and academia to explain the origin of the increased cell efficiency of bulk solution-processed perovskite cells. We also explored the possibility of enhancing the efficiency of the c-Si and perovskite cells by using them in a tandem configuration. To improve the intrinsic reliability, we have investigated 2D-perovskite cells with slightly lower efficiency but longer lifetime. We interpreted the behavior of the 2D-perovskite cells using randomly stacked quantum wells in the absorber region. We studied the reliability issues of c-Si modules and correlated series resistance of the modules directly to the solder bond failure. We also found out that finger thinning of the contacts at cell level manifests as a fake shunt resistance but is distinguishable from real shunt resistance by exploring the reverse bias or efficiency vs. irradiance. Then we proposed a physics-based model to predict the energy yield and lifetime of a module that suffers from solder bond failure using real field data by considering the statistical nature of the failure at module level. This model is part of a more comprehensive model that can predict the lifetime of a module that suffers from more degradation mechanisms such as yellowing, potential induced degradation, corrosion, soiling, delamination, etc. simultaneously. This method is called forward modeling since we start from environmental data and initial information of the module, and then predict the lifetime and time-dependent energy yield of a solar cell technology. As the future work, we will use our experience in forward modeling to deconvolve the reliability issues of a module that is fielded since each mechanism has a different electrical signature. Then by calibrating the forward model, we can predict the remaining lifetime of the fielded module. This work opens new pathways to achieve 2030 Sunshot goals of LCOE below 3c/kWh by predicting the lifetime that the product can be guaranteed, helping financial institutions regarding the risk of their investment, or national laboratories to redefine the qualification and reliability protocols.<br>