Tese (doutorado)—Universidade de Brasília, Faculdade de Tecnologia, Departamento de Engenharia Mecânica, 2015. / Submitted by Fernanda Percia França (fernandafranca@bce.unb.br) on 2015-11-20T19:59:26Z No. of bitstreams: 1 2015_EdgarSobralAshiuchi.pdf: 4822357 bytes, checksum: 0a5b84f109f0c56b9d9bd06d784e6ea3 (MD5) / Approved for entry into archive by Raquel Viana(raquelviana@bce.unb.br) on 2016-05-12T19:28:40Z (GMT) No. of bitstreams: 1 2015_EdgarSobralAshiuchi.pdf: 4822357 bytes, checksum: 0a5b84f109f0c56b9d9bd06d784e6ea3 (MD5) / Made available in DSpace on 2016-05-12T19:28:40Z (GMT). No. of bitstreams: 1 2015_EdgarSobralAshiuchi.pdf: 4822357 bytes, checksum: 0a5b84f109f0c56b9d9bd06d784e6ea3 (MD5) / Este trabalho tem como principal objetivo investigar os efeitos do tratamento criogênico profundo quanto à microabrasão na liga de alumínio laminado AA 6101-T4 com e sem o revestimento de CrN depositado por PVD. O material tal como recebido foi utilizado como referência de desempenho em ensaios de resistência ao desgaste microabrasivo para amostras que receberam o tratamento criogênico, o revestimento de CrN ou as combinações de ambos. O material tratado criogenicamente apresentou aumento relativo na resistência ao desgaste da ordem de 35%. Com uma combinação específica do tratamento criogênico profundo e do revestimento de filme fino de CrN, a resistência ao desgaste obteve incremento da ordem de 81%. Esse resultado da combinação do tratamento criogênico e do revestimento de CrN foi substancialmente superior aos obtidos para os materiais que receberam apenas um deles. Levando em consideração os mecanismos de desgaste manifestados no sistema tribológico, a dureza não demonstrou acompanhar o acréscimo da resistência ao desgaste. Estruturas nanométricas tais como aglomerados ou zonas de Guinier-Preston (GP) exibiram maior concentração nas amostras tratadas criogenicamente. De acordo com este trabalho, apenas a presença de tais nanoestruturas pôde ser associada ao aumento da resistência ao desgaste com a aplicação do tratamento criogênico profundo. Esta tese explora esse tipo de beneficiamento além dos limites da sua habitual aplicação para o aço. _______________________________________________________________________________________________ ABSTRACT / This work aimed to investigate the effects of deep cryogenic treatment with respect to the abrasion in rolled aluminum alloy AA 6101-T4 with and without the CrN coating deposited by PVD. The material as received was used as a performance benchmark in microabrasive wear resistance test for samples receiving the cryogenic treatment, the CrN coatings or combinations of both. The cryogenically treated material presented relative increase in wear resistance of the order of 35%. With a specific combination of deep cryogenic treatment and the thin CrN film coating, the wear resistance was an increase of approximately 81%. This results from the combination of the cryogenic treatment and CrN coating was substantially higher than those obtained for the materials that received only one of them. Taking into account the wear mechanisms manifested in the tribological system, the hardness did not show follow the wear resistance increase. Nanoscale structures such as clusters or Guinier-Preston(GP) zones exhibited highest concentration in the samples treated cryogenically. According to this work, only the presence of such nanostructures could be associated with increased wear resistance for the material cryogenic treated. This thesis explores the deep cryogenic treatment beyond the limits of their usual application for steel.

Le projet s’inscrit dans le développement de sources lasers RGB miniaturisées pour l’affichage et la vidéoprojection, la conversion de fréquence dans les cellules solaires.Les verres fluorés ZLAG (ZrF4-LaF3-AlF3-GaF3) codopés terres rares ont été considérés. Ce verre possède une faible énergie de phonon, une forte solubilité des terres rares et peut être fabriqué en couche mince par la technique PVD. Il est de plus le précurseur de vitrocéramiques transparentes. On a observé dans les verres massifs et les guides d’onde des émissions bleue, orange et rouge avec un codopage Pr3+-Yb3+, bleue et rouge avec un co-dopage Tm3+-Yb3+. L’émission RGB dans les verres tri-dopés Tm3+-Er3+-Yb3+ semble prometteuse. Par ailleurs, la vitro-céramisation a permis d’augmenter de plus de 30% les sections efficaces d’absorption des ions Pr3+ et Yb3+.Une efficacité de transfert de 92% a été obtenue dans les verres co-dopés 0,5Pr3+-10Yb3+ pour le processus de conversion d’un photon bleu en deux photons IR. / The project joins in the development of miniaturized laser sources RGB for display and videoprojection, frequency conversion in solar cells.Fluoride glasses ZLAG ( ZrF4-LaF3-AlF3-GaF3) co-doped with rare earths were studied. This glass has a low phonon energy, a strong solubility of the rare earth ions and can be fabricated as thin films by PVD. It is also the precursor of transparent glass-ceramics. Similar emissions in both co-doped bulk and waveguides have been observed ; blue, orange, red emission for Pr3+-Yb3+ and blue, red emission for Tm3+-Yb3+. The RGB emission in bulk Tm3+-Er3+-Yb3+ tri-doped glass seems promising. Furthermore, the absorption cross section of Pr3+ and Yb3+ ions has been increased by 30% with the ceraming process.An energy transfer efficiency (ETE) of 92% has been obtained for co-doped glass with 0,5Pr3+-10Yb3+ for the conversion process of a blue photon into two infrared one.

Die vorliegende Dissertation befasst sich mit dem Wachstum und der Charakterisierung von Silizium- und Germanium-Nanodrähten. Diese Strukturen gelten als aussichtsreiche Komponenten für zukünftige Bauelemente. Für die Anwendung ist die genaue Kenntnis der Größe, der kristallographischen Orientierung und der Position der Nanodrähte erforderlich. Ziel dieser Arbeit war daher die Untersuchung von Si- und Ge-Nanodrähten im Hinblick auf ihre Größe, Orientierung und Position. Die Herstellung erfolgte durch Physikalische Gasphasenabscheidung (PVD) im Ultrahochvakuum nach dem Vapor-Liquid-Solid (VLS)-Verfahren, das auf dem Wachstum aus Lösungsmitteltröpfchen basiert. Die Größe der Nanodrähte konnte im Falle von Silizium auf Si(111) mit Gold als Lösungsmittel durch die Parameter des Experiments reproduzierbar bestimmt werden. Höhere Goldbedeckung und höhere Substrattemperaturen führten zu Tröpfchen mit größerem Duchmesser und somit zu dickeren Drähten. Längere Si-Verdampfungszeiten und höhere Si-Verdampfungsraten führten zu längeren Drähten. Dünnere Drähte wuchsen schneller als dickere. Als zweites Lösungsmittel wurde Indium untersucht, da es sich im Vergleich zu Gold nicht nachteilig auf die elektronischen Eigenschaften von Silizium auswirkt. Basierend auf den Ergebnissen zur Tröpfchenbildung konnten die besseren Wachstumsresultate mit Gold erklärt werden. Germanium-Nanodrähte, die aus Goldtröpfchen auf Ge(111) gezüchtet wurden, zeigten im Gegensatz zu den Si-Nanodrähten nicht die kristallographische [111]-Orientierung des Substrates, sondern eine -Orientierung, was durch Berechnungen von Keimbildungsenergien auf verschiedenen Kristallflächen erklärt werden konnte. Zur Anordnung von Metalltröpfchen und damit von Nanodrähten wurden Substrate mithilfe von fokussierten Ionenstrahlen (FIB) vorstrukturiert, um die Tröpfchenbildung an bestimmten Stellen zu begünstigen. Es gelang, aus angeordneten Goldtröpfchen epitaktisch gewachsene Si- und Ge-Nanodrähte zu züchten. / This dissertation deals with the growth and the characterization of silicon and germanium nanowhiskers, also called nanorods or nanowires. The investigation of these structures is of great interest as they represent promising building blocks for future electronic devices. With regard to a possible application, the knowledge of size, crystallographic orientation and position of the nanowhiskers is essential. The purpose of this work was, therefore, to investigate the growth of Si and Ge nanowhiskers with regard to their size, orientation and position. The nanowhiskers were grown via physical vapor deposition (PVD) in ultra-high vacuum using the vapor-liquid-solid (VLS) mechanism which is based on growth from solution droplets. The size of the nanowhiskers could be reproducibly determined by the experimental parameters in the case of Si nanowhiskers on Si(111) with gold as the solvent. A higher gold coverage as well as a higher substrate temperature led to larger droplet diameters and thus to thicker whiskers. A longer silicon evaporation time and a higher silicon rate led to longer whiskers. Thinner whiskers grew faster than thicker ones. A second material used as the solvent was indium as it is more suitable for electronic application compared to gold. Based on results of droplet formation of the two solvents on silicon, the better results of whisker growth using gold could be explained. Ge nanowhiskers grown from gold droplets on Ge(111) did not show the [111] orientation of the substrate as in the case of Si nanowhiskers on Si(111) but a orientation. By calculating nucleation energies on different crystal facets, the experimental findings could be explained. To position nanodroplets of the solvent material and thus to obtain a regular arrangement of nanowhiskers, substrates were pre-structured with nanopores by focused ion beams (FIB). Silicon and germanium nanowhiskers could be epitaxially grown from ordered arrays of gold droplets.

The work carried out as a part of this thesis has been focussed on understanding different aspects of the chemical vapor deposition process namely, ALD / MOCVD. A large part of the thesis is aimed at solving the problem of a single-source precursor for the MOCVD process to obtain substituted metal oxide thin films. For a chemical vapor deposition technique, it is important to understand the requisite salient features of precursor for deposition of thin films. For this purpose, not only is the structural characterization of the chemical precursor is required but also an in-depth thermal analysis of the precursor to know its vapor pressure. Vapor pressure of a metalorganic complex is one of the important properties to evaluate the applicability of a metalorganic complex as a MOCV/ALD precursor. The thesis discusses a novel approach to use thermal analysis as a tool to gauge the viability of substituted metal “single source” precursor for MOCVD/ALD. The other half deals with material characterization of thin films grown by an ALD process using hydrogen and Ti(OiPr)2(tbob)2 as precursors. The films were further studied for their potential application as high-k dielectric in DRAM applications. The first chapter is an overview of topics that are relevant to the work carried out in this thesis. The chapter focuses on the description of techniques used for thin film deposition. A detailed review of CVD-type techniques (ALD/ MOCVD) is then given. Chapter1 reviews the various process parameters involved in ALD,i.e. film growth(specifically as a function of the reactant pulse length, the nature of the chemical reactant/precursor and that of the metal precursor, and purge length) and growth temperature. Following the discussion of ALD, CVD and its growth kinetics are also discussed. Chapter 1 then outlines a holistic understanding of precursors, followed the differences in requirement for using them in ALD and MOCVD. Further, an introduction to the titanium oxide (Stoichiometric titanium dioxide and various Magneli phases) system, its phase diagram, oxide properties and their applications is given. Chapter 1 concludes by delineating the scope of the work carried out which is presented in the thesis. The second chapter deals with the synthesis of a series of substituted metal “single source” precursors to be used for MOCVD of substituted metal oxides thin films. The precursor complexes were of the type AlxCr1-x (acac)3 where 0<x<1. The complexes were synthesized using the novel approach of co-synthesis and were characterized by various spectroscopic techniques. Single crystal X-ray diffraction at low temperature was carried out to understand the substitution of metal in the complex crystallographically. The substituted metal complexes synthesized and characterized in chapter 2 were further evaluated for their viability as single source precursors for MOCVD application, using thermo-gravimetry as discussed in chapter 3. Vapor pressure of these complexes was determined by using the Langmuir equation, while the enthalpies of submission and evaporation were calculated using the Clausius-Clapeyron equation. One of the composition of the series of substituted metal complexes, viz., Al0.9Cr0.1(acac)3, was employed on MOCVD reactor as precursor to obtain thin films on three substrates, Si(100), fused silica, and polycrystalline x- alumina, simultaneously. The resultant thin films were characterized using XRD, electron microscopy, FTIR, EDS, X-ray mapping, and UV-vis spectroscopy. Chapter 4 deals with the growth of titanium oxide thin films using ALD. The metal precursor used was Ti(OiPr)2(tbob)2 and the reactant gas was hydrogen. Hydrogen, a reducing gas, was deliberately used to obtain the reduced defect oxide phases of titanium, commonly called Magneli phases. The growth rate of films grown on p-Si(100) was studied with respect to the substrate temperature, vaporizer temperature, pulse duration of metal precursor and pulse duration of the reactive gas. Also, the concept of complementarity of a reaction and self-limiting behavior in a true ALD process was illustrated. The deposition conditions such as substrate temperature and reactive gas flows have been varied to optimize the phase content and the morphology of the films. The films grown were characterized to determine the various phases of titanium oxide present using XRD, TEM, FTIR spectroscopy, Raman spectroscopy, and UV-vis spectroscopy. The presence of carbon was revealed by Raman spectroscopy. By using these characterization techniques, it was concluded that the film grown is a composite made of stiochiometric TiOx matrix embedded with crystallites of (reduced) Magneli phases. Chapter 5 deals with the electrical properties of the composite thin films grown in chapter 4. the films behave as percolative capacitor which could be used for application as novel high-k dielectric material for DRAM. The effect of change in flow rates of reactive gas (H2) on the dielectric constant (k) and leakage current of the film were studied. It was found that phase composition of the film plays an important role in tuning the dielectric properties of the film was also studied. The effect of thickness of the film also studied on the dielectric properties of the film. The trend observed was correlated to the morphology of the film as a function of its thickness and the grain growth mechanism as observed from high resolution scanning electron microscopy. Further, the effect of change in substrate temperature, metal precursor pulse length, and of the metal used as top electrode, on C-V and I-V characteristics were studied. It was interesting to see that the presence of the more conductingTi5O9 (than Ti3O5) enhances the dielectric constant, which is a requisite for a high-k material for DRAM application. On the other hand, the presence of Ti5O9 also increased the leakage current in the film, which was not desirable. It therefore suggested itself that an optimum embedment of Ti5O9 in the composite helps in enhancing the dielectric constant, while maintaining a low leakage current. Under optimum conditions, a dielectric constant of 210 at 1MHz was measured with a leakage current of 17 nA. The effect of the presence of carbon in the film was studied using Raman Spectroscopy, and it was found that a high leakage was associated with films having greater carbon content. In this chapter, electrical properties of composite thin films were also compared with those of stoichiometric titanium dioxide (a known dielectric). Further, a multilayer sandwich structure was proposed, such that it had a 53 mm thick stoichiometric TiO2 layer followed by 336nm thick composite film and again a 53nm thick stoichiometric titanium dioxide layer. The dielectric characteristics of this structure were found to be better than those of either of the other two.viz., stoichiometric titanium dioxide film or the composite thin film of titanium oxide.

Mit der vorliegenden Arbeit wird das Wachstum von polykristallinem Silicium auf Glas bei niedrigen Temperaturen aus metallischen Lösungen in einem Zweistufenprozess untersucht. Im ersten Prozessschritt werden nanokristalline Siliziumschichten (nc-Si) hergestellt, entweder durch die direkte Abscheidung auf geheizten Substraten oder durch als ''Amorphous-Liquid-Crystalline''(ALC)-Umwandlung bezeichnete metall-induzierte Kristallisation. Im zweiten Prozessschritt dienen die Saatschichten als Vorlage für das Wachstum von deutlich größeren Kristalliten durch stationäre Lösungszüchtung. Die ALC-Prozessdauer konnte durch umfassende Parameterstudien signifikant reduziert werden. Die Charakterisierung der durch direkte Abscheidung auf geheizten Substraten entstehenden nc-Si Saatschichten offenbarte, dass es sich dabei um individuelle Saatkörner handelt, die in eine quasi-amorphe Matrix eingebettet sind. Die Oxidation der Saatschichten vor dem zweiten Prozessschritt wurde als ein wesentliches Hindernis für das Wachstum identifiziert. Als erfolgreichste Lösung zur Überwindung dieses Problems hat sich ein anfänglicher Rücklöseschritt erwiesen. Da diese Methode jedoch schwierig zu kontrollieren ist, wurde ein UV-Laser-System entwickelt und installiert. Erste Resultate zeigen epitaktisches Wachstum an den Stellen, an denen das Oxid entfernt wurde. Bei der Lösungszüchtung auf ALC-Schichten beginnt das Wachstum an einigen größeren Saatkristallen, von wo aus umliegende Gebiete lateral überwachsen werden. Obwohl Kristallitgrößen bis zu 50 Mikrometern erreicht wurden, war es noch nicht möglich, geschlossene Schichten zu erzielen. Durch Lösungszüchtung auf nc-Si Saatschichten hingegen konnte dieses Ziel erreicht werden. Geschlossene, polykristalline Si-Schichten wurden erzeugt, auf denen alle Si-Kristallite miteinander verbunden sind. Neben den Wachstumsexperimenten wurden 3D-Simulationen durchgeführt, in denen u.a. unterschiedliche Heizerkonfigurationen simuliert wurden. / The subject of this thesis is the investigation of the growth of polycrystalline silicon on glass at low temperatures from metallic solutions in a two-step growth process. In the first process step, nanocrystalline Si (nc-Si) films are formed either by direct deposition on heated substrates, or by a metal-induced crystallization process, referred to as amorphous-liquid-crystalline (ALC) transition. In the second process step, these seed layers serve as templates for the growth of significantly larger Si crystallites by means of steady-state solution growth. Extensive parameter studies for the ALC process helped to bring down the process duration significantly. Characterization of the nc-Si seed layers, formed by direct deposition on heated substrates, showed that the layer is composed of individual seeds, embedded in a quasi-amorphous matrix. The oxidation of the seed layers prior to the second process step was found to be a major obstacle. The most successful solution has been an initial melt-back step. As the process is hard to control, though, a UV laser system has been developed and installed. First promising results show unobstructed epitaxial growth where the oxide has been removed. Steady-state solution growth on ALC seed layers was found to start from a few larger seed crystals, and then cover the surrounding areas by lateral overgrowth. Although crystallites with sizes of up to 50 micrometers were obtained, it was not yet possible to achieve full surface coverage with a continuous layer. By solution growth on nc-Si seed layers, however, it was eventually possible to achieve this goal. Continuous, polycrystalline Si layers were grown, on which all Si crystallites are interlocked. The growth experiments were accompanied by 3D simulations, in which e.g. different heater configurations have been simulated.

Gasphasenabscheidungen werden zur Produktion dünner Schichten in der Mikro- und Nanoelektronik benutzt, um eine präzise Kontrolle der Schichtdicke im Sub-Nanometer-Bereich zu erreichen. Elektronische Eigenschaften der Schichten werden dabei von strukturellen Eigenschaften determiniert, deren Bestimmung mit hohem experimentellem Aufwand verbunden ist. Die vorliegende Arbeit erweitert ein hochparalleles Modell zur atomistischen Simulation des Wachstums und der Struktur von Dünnschichten, welches Molekulardynamik (MD) und Kinetic Monte Carlo-Methoden (KMC) kombiniert, um die Beschreibung beliebiger Gasphasenabscheidungen. KMC-Methoden erlauben dabei die effiziente Betrachtung der Größenordnung ganzer Nano-Bauelemente, während MD für atomistische Genauigkeit sorgt. Erste Ergebnisse zeigen, dass das Parsivald genannte Modell Abscheidungen in Simulationsräumen mit einer Breite von 0.1 µm x 0.1 µm effizient berechnet, aber auch bis zu 1 µm x 1 µm große Räume mit 1 Milliarden Atomen beschreiben kann. Somit lassen sich innerhalb weniger Tage Schichtabscheidungen mit einer Dicke von 100 Å simulieren. Die kristallinen und amorphen Schichten zeigen glatte Oberflächen, wobei auch mehrlagige Systeme auf die jeweilige Lagenrauheit untersucht werden. Die Struktur der Schicht wird hauptsächlich durch die verwendeten molekulardynamischen Kraftfelder bestimmt, wie Untersuchungen der physikalischen Gasphasenabscheidung von Gold, Kupfer, Silizium und einem Kupfer-Nickel-Multilagensystem zeigen. Stark strukturierte Substrate führen hingegen zu Artefakten in Form von Nanoporen und Hohlräumen aufgrund der verwendeten KMC-Methode. Zur Simulation von chemischen Gasphasenabscheidungen werden die Precursor-Reaktionen von Silan mit Sauerstoff sowie die Hydroxylierung von alpha-Al2O3 mit Wasser mit reaktiven Kraftfeldern (ReaxFF) berechnet, allerdings ist weitere Arbeit notwendig, um komplette Abscheidungen auf diese Weise zu simulieren. Mit Parsivald wird somit die Erweiterung einer Software präsentiert, die Gasphasenabscheidungen auf großen Substraten effizient simulieren kann, dabei aber auf passende molekulardynamische Kraftfelder angewiesen ist.:Inhaltsverzeichnis Abbildungsverzeichnis Tabellenverzeichnis Abkürzungsverzeichnis Symbolverzeichnis 1 Einleitung 2 Grundlagen 2.1 Gasphasenabscheidungen 2.1.1 Physikalische Gasphasenabscheidung 2.1.2 Chemische Gasphasenabscheidung 2.1.3 Atomlagenabscheidung 2.1.4 Methoden zur Simulation von Gasphasenabscheidungen 2.2 Molekulardynamik 2.2.1 Formulierung der Molekulardynamik 2.2.2 Auswahl verfügbarer Molekulardynamik-Software 2.2.3 Molekulardynamische Kraftfelder 2.3 Kinetic Monte Carlo-Methoden 2.4 Datenstrukturen 2.4.1 Numerische Voraussetzungen an Gasphasenabscheidungen 2.4.2 Vergleich der Laufzeiten für verschiedene Datenstrukturen 2.4.3 Effiziente Datenstrukturen 2.4.4 Alpha-Form 3 Methoden und Modelle 3.1 Stand der Forschung 3.1.1 Anwendungen von KMC-Simulationen für die Gasphasenabscheidung 3.1.2 Anwendung von MD-Simulationen für die Gasphasenabscheidung 3.2 Parsivald-Modell 3.2.1 Zielsetzung für Parsivald 3.2.2 Beschreibung des Parsivald-Modells 3.2.3 Annahmen und Einschränkungen 3.2.4 Erweiterungen im Rahmen der Masterarbeit 3.2.5 Behandlung von fehlerhaften Ereignissen 3.3 Laufzeitanalyse von Parsivald-Simulationen 3.3.1 Ereignis-Laufzeit TE 3.3.2 Ereignis-Durchsatz RE 3.3.3 MD-Laufzeit TMD 3.3.4 Worker-Laufzeit Tworker 3.3.5 Serielle Laufzeit T1 3.3.6 Anzahl der parallelen Prozesse p 3.3.7 Workerdichte rhoworker 3.3.8 Parallele Laufzeit Tp 3.3.9 Speedup Sp 3.3.10 Parallele Effizienz Ep 3.3.11 Auswertung der Laufzeitparameter 3.3.12 Fazit 3.4 MD-Simulationen: Methoden und Auswertungen 3.4.1 Zeitskalen in MD-Simulationen 3.4.2 Relaxierungen 3.4.3 Strukturanalysen 3.4.4 Bestimmung der Dichte und Temperatur 3.4.5 Radiale Verteilungsfunktionen, Bindungslänge und Koordinationszahl 3.4.6 Oberfläche, Schichtdicke, Rauheit und Porösität 3.4.7 Reaktionen und Stabilität von Molekülen 4 Simulationen von Gasphasenabscheidungen 4.1 Gold-PVD 4.1.1 Voruntersuchungen 4.1.2 Thermodynamische Eigenschaften 4.1.3 Simulation von Gold-PVD 4.1.4 Skalierbarkeit mit der Simulationsgröße 4.1.5 Fazit 4.2 Kupfer-PVD 4.2.1 Voruntersuchungen 4.2.2 Thermodynamische Eigenschaften 4.2.3 Simulation von Kupfer-PVD 4.2.4 Untersuchung der maximalen Workerdichte 4.2.5 Fazit 4.3 Multilagen-PVD 4.3.1 Multilagen-Simulationen mit Parsivald 4.3.2 Vergleich mit Ergebnissen reiner MD-Simulationen 4.3.3 Vergleich der Parallelisierbarkeit 4.3.4 Fazit 4.4 Silizium-PVD 4.4.1 Voruntersuchungen 4.4.2 Simulationen von Silizium-PVD 4.4.3 Fazit 4.5 Aluminiumoxid-ALD 4.5.1 ReaxFF-Parametersätze 4.5.2 Voruntersuchungen 4.5.3 Fazit 5 Zusammenfassung und Ausblick 5.1 Zusammenfassung 5.2 Ausblick A Physikalische Konstanten und Stoffeigenschaften B Datenstrukturen B.1 Übersicht über KMC-Operationen B.2 Beschreibung grundlegender Datenstrukturen B.3 Delaunay-Triangulationen B.3.1 Ausgewählte Eigenschaften einer Delaunay-Triangulation B.3.2 Algorithmen zur Konstruktion einer Delaunay-Triangulation C Ergänzungen zur Laufzeitanalyse von Parsivald C.1 Einfluss der Ereignis-Laufzeit auf die effiziente Raumgröße weff C.2 Zusätzliche Einflüsse auf das Maximum der Prozesse pmax C.3 Abschätzung der maximalen Workerdichte per Random Sequential Adsorption D Ergänzungen zur Simulation von Gold-PVD E Multilagen-PVD E.1 Porenbildung bei Unterrelaxation E.2 Simulationen mit Lagendicken von jeweils 5 nm F Simulation der CVD-Precursormoleküle Silan und Sauerstoff F.1 Stabilität der Precursormoleküle F.2 Reaktion der Precursormoleküle Literaturverzeichnis